Display device

Abstract

A display device is disclosed, including a display panel and an input sensor disposed on the display panel, the display panel including a light-emitting area and a non-light-emitting area adjacent to the light-emitting area. The input sensor includes a first sensor conductive layer disposed on the display panel, a first sensor insulating layer disposed on the first sensor conductive layer, and a second sensor conductive layer provided on the first sensor insulating layer. At least one of the first sensor conductive layer and the second sensor conductive layer is provided with a grid opening defined therethrough, at least one of a side surface of the first sensor conductive layer and a side surface of the second sensor conductive layer is provided with a recessed portion defined therein, and the input sensor further includes a light absorbing layer disposed in the recessed portion.

Description

[0001] This application claims priority to Korean Patent Application No. 10-2023-0047041, filed on April 10, 2023, which is hereby incorporated by reference in its entirety. Technical Field

[0002] The present disclosure relates to a display device including a display panel and an input sensor. Background Art

[0003] Multimedia devices such as televisions, mobile phones, tablet computers, navigation units, and gaming units include display devices to provide images to users through display screens. The display devices include input sensors that provide a touch-based input method to allow users to easily and intuitively input information or commands.

[0004] The display device includes a display panel that generates an image and an input sensor that senses a user's touch. The input sensor includes a conductor that senses an external input, and the conductor of the input sensor affects the luminous efficiency of the display device or the reflectivity of the display device to external light. Utility Model Content

[0005] The present disclosure may provide a display device including an input sensor and having reduced reflectivity with respect to external light.

[0006] An embodiment of a display device includes: a display panel including a light-emitting area and a non-light-emitting area adjacent to the light-emitting area; and an input sensor disposed on the display panel. The input sensor includes a first sensor conductive layer disposed on the display panel, a first sensor insulating layer disposed on the first sensor conductive layer, and a second sensor conductive layer disposed on the first sensor insulating layer. At least one of the first sensor conductive layer and the second sensor conductive layer is provided with a grid opening defined therethrough, at least one of a side surface of the first sensor conductive layer and a side surface of the second sensor conductive layer is provided with a recessed portion defined therein, and the input sensor further includes a light absorbing layer disposed in the recessed portion.

[0007] The second sensor conductive layer may include a first conductive layer disposed on the first sensor insulating layer, a second conductive layer disposed on the first conductive layer, and a third conductive layer disposed on the second conductive layer, wherein side surfaces of the first conductive layer and the third conductive layer protrude outward more than side surfaces of the second conductive layer to define a recessed portion, and side surfaces of the second conductive layer are covered by the light absorbing layer.

[0008] The input sensor may further include a second sensor insulating layer disposed on the second sensor conductive layer, and the second sensor insulating layer contacts a side surface of the first conductive layer, a side surface of the third conductive layer, and an upper surface of the third conductive layer, and does not contact a side surface of the second conductive layer.

[0009] The first conductive layer and the third conductive layer may include the same material as each other, and the second conductive layer includes a material different from that of the first conductive layer and the third conductive layer.

[0010] The first conductive layer and the third conductive layer may include titanium (Ti), and the second conductive layer may include aluminum (Al) or copper (Cu).

[0011] The first sensor conductive layer includes a first conductive layer arranged on the display panel, a second conductive layer arranged on the first conductive layer, and a third conductive layer arranged on the second conductive layer, side surfaces of the first conductive layer and the third conductive layer protrude outward more than the side surface of the second conductive layer to form a recessed portion, and the side surface of the second conductive layer is covered by the light absorbing layer.

[0012] In an embodiment, the first sensor insulating layer contacts a side surface of the first conductive layer, a side surface of the third conductive layer, and an upper surface of the third conductive layer, and does not contact a side surface of the second conductive layer.

[0013] The first conductive layer and the third conductive layer may include the same material as each other, and the second conductive layer includes a material different from that of the first conductive layer and the third conductive layer.

[0014] The first conductive layer and the third conductive layer may include titanium (Ti), and the second conductive layer may include aluminum (Al) or copper (Cu).

[0015] The light absorbing layer may include molybdenum niobium oxide (MoNbO x ) or molybdenum tantalum oxide (MoTaO x ).

[0016] In an embodiment, the light absorbing layer has a thickness of about 400 angstroms to about 1000 angstroms.

[0017] The light absorbing layer may include amorphous silicon (a-Si) or silicon carbide (SiC).

[0018] In an embodiment, the light absorbing layer has a thickness of about 40 angstroms to about 1000 angstroms.

[0019] An embodiment of the display device includes: a display panel including a display area; and an input sensor including a sensing area overlapping the display area and disposed on the display panel. The input sensor includes first sensing electrodes disposed in the sensing area and each including a first sensing pattern arranged in a first direction and second sensing electrodes disposed in the sensing area and each including a second sensing pattern arranged in a second direction intersecting the first direction. Each of the first sensing pattern and the second sensing pattern includes a side surface in which a recessed portion is defined, and the input sensor further includes a light absorbing layer disposed in the recessed portion.

[0020] Each of the first sensing pattern and the second sensing pattern may include a first conductive layer, a second conductive layer disposed on the first conductive layer, and a third conductive layer disposed on the second conductive layer, side surfaces of the first conductive layer and the third conductive layer protrude outward more than side surfaces of the second conductive layer to define a recessed portion, and side surfaces of the second conductive layer are covered by the light absorbing layer.

[0021] The first conductive layer and the third conductive layer may include the same material as each other, and the second conductive layer includes a material different from that of the first conductive layer and the third conductive layer.

[0022] The first conductive layer and the third conductive layer may include titanium (Ti), and the second conductive layer may include aluminum (Al) or copper (Cu).

[0023] The light absorbing layer may include molybdenum niobium oxide (MoNbO x ) or molybdenum tantalum oxide (MoTaO x ), and the light absorbing layer has a thickness of about 400 angstroms to about 1000 angstroms.

[0024] In an embodiment, the light absorbing layer includes amorphous silicon (a-Si) or silicon carbide (SiC), and the light absorbing layer has a thickness of about 40 angstroms to about 1000 angstroms.

[0025] Each of the first sensing pattern and the second sensing pattern may include mesh openings.

[0026] According to the above, the display device includes an input sensor, and the input sensor includes a sensing electrode provided with a recessed portion defined in a side surface of the input sensor and a light absorbing layer disposed in the recessed portion. Accordingly, the reflectivity of external light reflected at the side surface of the sensing electrode is reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The above and other advantages of the present disclosure will become readily apparent by reference to the following detailed description when considered in conjunction with the accompanying drawings, in which:

[0028] Figure 1 is an assembled perspective view of an electronic device according to an embodiment of the present disclosure;

[0029] Figure 2 is an exploded perspective view of an electronic device according to an embodiment of the present disclosure;

[0030] Figure 3A and Figure 3B For along Figure 2 A cross-sectional view of the electronic device taken along line II';

[0031] Figure 4A , Figure 4B and Figure 4C is a cross-sectional view of a display device according to an embodiment of the present disclosure;

[0032] Figure 5 is a plan view of a display panel according to an embodiment of the present disclosure;

[0033] Figure 6 is a plan view of an input sensor according to an embodiment of the present disclosure;

[0034] Fig. 7A and Figure 7B is an enlarged plan view of a sensing pattern according to an embodiment of the present disclosure;

[0035] Fig. 8A and Figure 8B is a cross-sectional view of a display device according to an embodiment of the present disclosure;

[0036] Figure 8C is a cross-sectional view of a display device according to a comparative example;

[0037] Fig. 9A , Fig. 9B and Fig. 9C is a cross-sectional view of a display device according to an embodiment of the present disclosure;

[0038] Fig. 10A , Fig. 10B , Fig. 10C , Fig. 10D and Fig.10E is a cross-sectional view of a process of a method for manufacturing a display device according to an embodiment of the present disclosure; and

[0039] Fig.11A and Fig. 11B is a graph of reflectivity as a function of wavelength according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0040] The present disclosure may be modified in various ways and may be implemented in many different forms, and therefore specific embodiments will be exemplified in the accompanying drawings and described in detail below. However, the present disclosure should not be limited to the specific disclosed forms, and should be interpreted as including all modifications, equivalents or replacements included in the spirit and scope of the present disclosure.

[0041] As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0042] It will be further understood that the terms “comprise,” “comprising,” “include,” and “incluing” when used in this specification indicate the presence of stated features, integers, steps, operations, elements, components, or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or groups thereof.

[0043] In the present disclosure, it will be understood that when an element (or region, layer or portion) is referred to as being "on", "connected to" or "coupled to" another element (or region, layer or portion), it can be directly on, directly connected to or directly coupled to the other element (or region, layer or portion), or intervening elements (or regions, layers or portions) may be present.

[0044] For ease of description, spatially relative terms, such as “below,” “lower,” “above,” and “upper,” etc., may be used herein to describe the relationship of one element or feature to another element or feature as illustrated in the figures.

[0045] In the present disclosure, the term “on” may mean that a portion of one element is disposed at a lower portion as well as an upper portion of another element.

[0046] Meanwhile, in the present disclosure, when an element is referred to as being "directly connected" to another element, there is no intervening element between the layer, film, region or substrate and the other layer, film, region or substrate. For example, the term "directly connected" may mean that two layers or two components are provided without using an additional adhesive between the two layers or two components.

[0047] As used herein, the word "or" means a logical "or" so that the expression "A, B, or C" means "A and B and C," "A and B but not C," "A and C but not B," "B and C but not A," "A but not B and not C," "B but not A and not C," and "C but not A and not B," unless the context dictates otherwise.

[0048] It will be understood that although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. Therefore, without departing from the teachings of the present disclosure, the first element discussed below may be referred to as the second element, and vice versa.

[0049] Unless otherwise defined, all terms (including technical terms and scientific terms) used in this article have the same meaning as those commonly understood by ordinary technicians in the field to which the present disclosure belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with their meaning in the context of the relevant field, and will not be interpreted in an idealized or overly formal sense unless explicitly defined as such in this article.

[0050] The same reference numerals refer to the same elements throughout. In the drawings, the thickness, proportion and dimension of components are exaggerated in order to effectively describe the technical contents.

[0051] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings.

[0052] Figure 1 is an assembled perspective view of an electronic device ELD according to an embodiment of the present disclosure, and Figure 2 is an exploded perspective view of an electronic device ELD according to an embodiment of the present disclosure.

[0053] refer to Figure 1 , the electronic device ELD can be activated in response to an electrical signal and can display an image. As an example, the electronic device ELD can be applied to large display devices (such as televisions, outdoor billboards, etc.), and small and medium-sized display devices (such as monitors, mobile phones, tablet computers, navigation units, game units, etc.). However, these are just examples, and the electronic device ELD can be applied to other display devices as long as they do not deviate from the concept of the present disclosure.

[0054] The electronic device ELD may be rigid or flexible. The term "flexible" used herein refers to the property of being able to bend. For example, the flexible electronic device ELD may be a bendable device, a rollable device, or a foldable device.

[0055] In the present embodiment, the third direction DR3 may be substantially perpendicular to a plane defined by the first direction DR1 and the second direction DR2. The front surface (or upper surface) and the rear surface (or lower surface) of each member of the electronic device ELD may be opposite to each other in the third direction DR3, and the normal direction of each of the front surface and the rear surface may be substantially parallel to the third direction DR3. The separation distance between the front surface and the rear surface of each member of the electronic device ELD in the third direction DR3 may correspond to the thickness of each member in the third direction DR3.

[0056] In the present disclosure, the expression "when viewed in a plane" may mean a state observed in the third direction DR3. In the present disclosure, the expression "when viewed in a cross section" may mean a state observed in the first direction DR1 or the second direction DR2. Meanwhile, the directions indicated by the first direction DR1, the second direction DR2, and the third direction DR3 are opposite to each other, and therefore, the directions indicated by the first direction DR1, the second direction DR2, and the third direction DR3 may be changed to other directions.

[0057] The electronic device ELD may display an image IM in a third direction DR3 through a display surface IS substantially parallel to a plane defined by the first direction DR1 and the second direction DR2. However, the shape of the display surface IS should not be limited thereto or thereby, and the display surface IS may further include a curved surface bent from at least one side of the plane. The display surface IS through which the image IM is displayed may correspond to the front surface of the electronic device ELD. The image IM may include a video as well as a still image. Figure 1 A clock widget and application icons are shown as representative examples of the image IM.

[0058] The electronic device ELD may have a rectangular shape having short sides extending in a first direction DR1 and long sides extending in a second direction DR2 intersecting the first direction DR1. However, the shape of the electronic device ELD should not be limited to a rectangular shape, and the electronic device ELD may have various shapes (e.g., a circular shape, a polygonal shape, etc.).

[0059] The electronic device ELD can sense an external input TC applied thereto from the outside. The external input TC may include various forms of input (e.g., force, pressure, temperature, light, etc.). In the present embodiment, a touch input generated by the hand of the user US and applied to the front surface of the electronic device ELD will be described as a representative example of the external input TC. However, this is only an example, and the external input TC may include all types of inputs that cause a change in capacitance. The area of ​​the electronic device ELD in which the external input TC is sensed should not be limited to the front surface of the electronic device ELD, and depending on the structure of the electronic device ELD, the electronic device ELD may sense the external input TC applied by the user US to the side surface or rear surface of the electronic device ELD.

[0060] The display surface IS of the electronic device ELD may include an image area IA and a frame area BZA. An image IM may be displayed through the image area IA. A user US may observe the image IM through the image area IA. In the present embodiment, the image area IA may have a quadrilateral shape with rounded vertices. However, this is only an example, and the image area IA may have various shapes.

[0061] The border area BZA may have a predetermined color and may block light. The border area BZA may be defined adjacent to the image area IA. As an example, the border area BZA may be provided outside the image area IA and may surround the image area IA. Accordingly, the shape of the image area IA may be substantially defined by the border area BZA, however, this is only an example. That is, the border area BZA may be provided adjacent to only one side of the image area IA, the border area BZA may be provided at the side surface of the electronic device ELD, or the border area BZA may be omitted.

[0062] refer to Figure 1 and Figure 2 , the electronic device ELD may include a window WM, a display device DD, an optical member AF, an electronic module EM, a power module PSM and a casing EDC.

[0063] The window WM may be provided on the display device DD and the optical member AF. The window WM may protect the display device DD from external impact and scratches applied to the display device DD. A front surface of the window WM may correspond to a display surface IS of the electronic device ELD.

[0064] The optical member AF may be disposed on the display device DD. The optical member AF may reduce the reflectivity of the display device DD with respect to external light. As an example, the optical member AF may include a polarizing film including a retarder or a polarizer, a plurality of reflective layers that destructively interfere reflected light with incident external light, or a plurality of color filters disposed to correspond to the arrangement of pixels and the emission color.

[0065] The display device DD may generate an image IM transmitted to the outside of the electronic device ELD, and may sense an external input TC. The display device DD may include a display panel DP and an input sensor ISP.

[0066] The display panel DP may display an image IM in response to an electrical signal. The display panel DP according to an embodiment may be a light-emitting display panel, however, it should not be particularly limited. For example, the display panel DP may be an organic light-emitting display panel, an inorganic light-emitting display panel, or a quantum dot light-emitting display panel. Hereinafter, an organic light-emitting display panel will be described as a representative example of the display panel DP.

[0067] The input sensor ISP may be disposed on the display panel DP. The input sensor ISP may sense an external input TC and may provide an input signal including information about the external input TC to allow the display panel DP to display an image IM corresponding to the external input TC. The input sensor ISP may be driven by various methods such as a capacitance method, a resistance film method, an infrared method, a sound wave method, or a pressure method, however, it should not be particularly limited. In the present embodiment, an input sensor ISP driven by a capacitance method will be described as a representative example.

[0068] The display device DD may include an active area AA and a peripheral area NAA defined adjacent to the active area AA. The light emitting elements of the display panel DP or the sensing electrodes of the input sensor ISP may be disposed in the active area AA, and the display device DD may be activated in response to an electrical signal to display an image IM in the active area AA or may sense an external input TC in the active area AA. A driving circuit, a signal line, and a pad may be disposed in the peripheral area NAA to drive the elements in the active area AA.

[0069] The active area AA may overlap the image area IA of the electronic device ELD, and the peripheral area NAA may overlap the bezel area BZA of the electronic device ELD. Components disposed in the peripheral area NAA may be prevented from being observed from the outside by the bezel area BZA.

[0070] The display device DD may further include a main circuit board MCB, a flexible circuit film FCB, a data driver DIC, a sensor control circuit T-IC, and a main controller 100 .

[0071] The main circuit board MCB may include a plurality of driving elements. The main circuit board MCB may be electrically connected to the display panel DP and the input sensor ISP via a flexible circuit film FCB. The main circuit board MCB may be electrically connected to the electronic module EM via a connector.

[0072] The flexible circuit film FCB may be connected to the display panel DP so that the display panel DP is electrically connected to the main circuit board MCB. The input sensor ISP may be electrically connected to the display panel DP and may be electrically connected to the main circuit board MCB via the flexible circuit film FCB, however, the present disclosure should not be limited thereto or thereby. According to an embodiment, the input sensor ISP may be electrically connected to the main circuit board MCB via an additional flexible circuit film, or the flexible circuit film FCB may be omitted and the main circuit board MCB may be directly connected to the display panel DP.

[0073] Each of the data driver DIC, the sensor control circuit T-IC, and the main controller 100 may be provided in an integrated chip. The data driver DIC may be mounted on the display panel DP, and the sensor control circuit T-IC and the main controller 100 may be mounted on the main circuit board MCB, however, the present disclosure should not be limited thereto or thereby. According to an embodiment, the data driver DIC may be mounted on a flexible circuit film FCB.

[0074] The main controller 100 may control the overall operation of the electronic device ELD. For example, the main controller 100 may control the operation of the display panel DP and the input sensor ISP. In addition, the main controller 100 may control the operation of the electronic module EM. The main controller 100 may include at least one microprocessor.

[0075] The data driver DIC may include a driving circuit to drive pixels of the display panel DP. The data driver DIC may receive image data and control signals from the main controller 100. As an example, the control signals may include an input vertical synchronization signal, an input horizontal synchronization signal, a main clock signal, and a data enable signal.

[0076] The sensor control circuit T-IC may provide an electrical signal to the input sensor ISP to drive the input sensor ISP. The sensor control circuit T-IC may receive a control signal (eg, a main clock signal) from the main controller 100.

[0077] The electronic module EM may include various functional modules to drive the display device DD. As an example, the electronic module EM may include a wireless communication module, an image input module, an audio input module, an audio output module, a memory and an external interface module, etc. The modules of the electronic module EM may be mounted on the main circuit board MCB or may be electrically connected to the main circuit board MCB via a separate flexible circuit board.

[0078] The power module PSM may be electrically connected to the electronic module EM. The power module PSM may supply power required for the overall operation of the electronic device ELD. As an example, the power module PSM may include a conventional battery.

[0079] The housing EDC may be coupled to the window WM to define the appearance of the electronic device ELD. The window WM may be coupled to the housing EDC to form an internal space to accommodate components of the electronic device ELD. The display device DD, the flexible circuit film FCB, the main circuit board MCB, the electronic module EM, and the power supply module PSM may be accommodated in the internal space. The display panel DP may be bent to allow the flexible circuit film FCB and the main circuit board MCB to face the rear surface of the display device DD and then be accommodated in the housing EDC.

[0080] The housing EDC may include a material having relatively high rigidity. As an example, the housing EDC may include a frame or a plate formed of glass, plastic, a metal material, or a combination thereof. The housing EDC may absorb external impact applied thereto from the outside and may prevent foreign matter (e.g., moisture) from entering therein to protect the display device DD.

[0081] Figure 3A and Figure 3B For along Figure 2 A cross-sectional view of the electronic device taken along line II'. Figure 3A and Figure 3B Various embodiments according to the stacking structure of components included in the electronic device ELD are shown, and reference is made to Figure 1 and Figure 2 The details of the described window WM, display panel DP and input sensor ISP can be applied to Figure 3A and Figure 3B Window WM, display panel DP and input sensor ISP.

[0082] refer to Figure 3A and Figure 3B , the window WM may include a base film WBB and a frame pattern WBM. The base film WBB may include an optically transparent insulating material. The base film WBB may include at least one of a glass film and a synthetic resin film. The base film WBB may have a single-layer structure or a multi-layer structure of two or more films attached to each other. The window WM may further include a functional layer (e.g., an anti-fingerprint layer, a phase control layer, a hard coating layer, etc.) disposed on the base film WBB.

[0083] The frame pattern WBM may be a colored layer formed on the surface of the base film WBB. The frame pattern WBM may include a material having a predetermined color. As an example, the frame pattern WBM may include a colored organic layer. The frame pattern WBM may have a single-layer structure or a multi-layer structure. The frame pattern WBM having a multi-layer structure may include a color layer and a light-blocking layer having a non-color (e.g., black). The frame pattern WBM may be formed by a deposition, printing, or coating process.

[0084] The frame pattern WBM may be provided to correspond to the frame area BZA of the electronic device ELD (refer to Figure 1 ). A region of the window WM in which the bezel pattern WBM is disposed may have a lower transmittance than a region in which the bezel pattern WBM is not disposed.

[0085] The first adhesive layer AL1 may be disposed between the window WM and the optical member AF. The window WM may be coupled to the optical member AF through the first adhesive layer AL1, however, the present disclosure should not be limited thereto or thereby. According to an embodiment, the first adhesive layer AL1 may be omitted, and the window WM may be directly disposed on the optical member AF.

[0086] refer to Figure 3A , the input sensor ISP may be directly disposed on the display panel DP. The input sensor ISP may be formed on a substrate surface provided by the display panel DP through a continuous process in a manufacturing process of the display device DD. The input sensor ISP may be integrally coupled to the display panel DP without a separate adhesive.

[0087] refer to Figure 3A , the optical member AF may be directly disposed on the display device DD. As an example, the optical member AF may be formed on the upper surface of the input sensor ISP through a continuous process. The optical member AF may include a color filter, and the optical member AF may be formed by coating, patterning, or printing a composition for a color filter on a substrate surface provided by the input sensor ISP.

[0088] However, the present disclosure should not be limited thereto or thereby, and reference is made to Figure 3B The optical member AF may be coupled to the display device DD via the second adhesive layer AL2. As an example, the optical member AF may be provided in the form of a film (eg, a polarizing film) and may be coupled to the display device DD via the second adhesive layer AL2 disposed on the upper surface of the input sensor ISP.

[0089] refer to Figure 3B , the display device DD may further include a third adhesive layer AL3 disposed between the input sensor ISP and the display panel DP. The input sensor ISP may be coupled to the display panel DP through the third adhesive layer AL3. As an example, the input sensor ISP may be provided as a touch panel manufactured by a separate process different from the manufacturing process of the display panel DP, and the input sensor ISP may be coupled to the display panel DP through the third adhesive layer AL3 disposed on the upper surface of the display panel DP.

[0090] Each of the first adhesive layer AL1, the second adhesive layer AL2 and the third adhesive layer AL3 may include a transparent adhesive (e.g., an optically clear adhesive (OCA) film, an optically clear resin (OCR) film or a pressure-sensitive adhesive (PSA) film), however, the adhesive included in the first adhesive layer AL1, the second adhesive layer AL2 and the third adhesive layer AL3 should not be limited to or thereby.

[0091] Figure 3A and Figure 3B The stacking structure and stacking order of the components included in the electronic device ELD shown in the figure are only examples, and the present disclosure should not be limited thereto or thereby. As an example, the electronic device ELD may further include a protective layer disposed under the display panel DP or the optical member AF may be omitted. In addition, the stacking order of the optical member AF and the input sensor ISP may be changed, and the optical member AF may be disposed between the display panel DP and the input sensor ISP.

[0092] Figure 4A , Figure 4B and Figure 4C is a cross-sectional view of a display device DD according to an embodiment of the present disclosure. The details of the display panel DP and the input sensor ISP described above may be applied to Figure 4A , Figure 4B and Figure 4C display panel DP and input sensor ISP.

[0093] refer to Figure 4A , the display panel DP may include a base layer BL, a circuit element layer DP-CL, a display element layer DP-OLED and an encapsulation layer TFL.

[0094] The base layer BL may provide a base surface, and the circuit element layers DP-CL are disposed on the base surface. The base layer BL may be a rigid substrate or may be a flexible substrate that is bendable, foldable, or rollable. The base layer BL may include a plastic substrate, a glass substrate, a metal substrate, or an organic / inorganic composite material substrate, however, it should not be limited thereto or thereby. The base layer BL may have a multilayer structure. As an example, the base layer BL may include an inorganic layer, a synthetic resin layer, or a composite material layer.

[0095] The circuit element layer DP-CL may be disposed on the base layer BL. The circuit element layer DP-CL may include at least one insulating layer, a semiconductor pattern, and a conductive pattern. The insulating layer, the semiconductor layer, and the conductive layer may be formed by a coating process or a deposition process. Then, the insulating layer, the semiconductor layer, and the conductive layer may be selectively patterned by several photoetching processes, and thus, the insulating layer, the semiconductor pattern, and the conductive pattern may be formed. The insulating layer, the semiconductor pattern, and the conductive pattern included in the circuit element layer DP-CL may form a driving element (e.g., a transistor, a signal line, and a pad) in the circuit element layer DP-CL.

[0096] The display element layer DP-OLED may be disposed on the circuit element layer DP-CL. The display element layer DP-OLED may include a light emitting element. The light emitting element of the display element layer DP-OLED may be electrically connected to a driving element of the circuit element layer DP-CL, and may emit light in response to a signal from the driving element to display an image.

[0097] The encapsulation layer TFL may be disposed on the display element layer DP-OLED and may encapsulate the light emitting element. The encapsulation layer TFL may include at least one thin layer to improve the optical efficiency of the display element layer DP-OLED or to protect the display element layer DP-OLED.

[0098] refer to Figure 4B , the display panel DP may include a base layer BL, a circuit element layer DP-CL, a display element layer DP-OLED, an encapsulation substrate ES and a sealant SM.

[0099] The circuit element layer DP-CL may be disposed on the base layer BL, and the display element layer DP-OLED may be disposed on the circuit element layer DP-CL.

[0100] The sealant SM may be disposed between the base layer BL and the encapsulation substrate ES. The sealant SM may combine the base layer BL with the encapsulation substrate ES. The sealant SM may include an organic adhesive or a frit.

[0101] The encapsulation substrate ES may be disposed on the display element layer DP-OLED. Each of the base layer BL and the encapsulation substrate ES may include a plastic substrate, a glass substrate, a metal substrate, or an organic / inorganic composite material substrate. The encapsulation substrate ES may be spaced apart from the display element layer DP-OLED by a predetermined interval in the third direction DR3. According to an embodiment, the display panel DP may further include a filling layer filled in the interval. The filling layer may include a desiccant or a resin material.

[0102] refer to Figure 4C , the input sensor ISP may include a sensor base layer ISL1, a first sensor conductive layer MTL1, a first sensor insulating layer ISL2, a second sensor conductive layer MTL2, and a second sensor insulating layer ISL3. The sensor base layer ISL1 may be directly disposed on the display panel DP, however, it should not be limited thereto or thereby. According to an embodiment, the sensor base layer ISL1 may be omitted, and in this case, the first sensor conductive layer MTL1 may be directly disposed on the display panel DP.

[0103] Each of the first sensor conductive layer MTL1 and the second sensor conductive layer MTL2 may have a single-layer structure or a multi-layer structure. The sensor conductive layer having a multi-layer structure may include a transparent conductive layer or a metal layer stacked in a two-layer structure or more. As an example, the sensor conductive layer having a multi-layer structure may have a structure in which a transparent conductive layer and a metal layer are stacked or metal layers containing different metals are stacked.

[0104] The transparent conductive layer included in the first sensor conductive layer MTL1 and the second sensor conductive layer MTL2 may include indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), PEDOT, metal nanowires, or graphene. The metal layer included in the first sensor conductive layer MTL1 and the second sensor conductive layer MTL2 may include molybdenum, silver, titanium, copper, aluminum, or an alloy thereof.

[0105] In the first sensor conductive layer MTL1 and the second sensor conductive layer MTL2 each having a multi-layer structure, a metal having relatively high durability and low reflectivity may be applied to an outer layer of the sensor conductive layer, and a metal having high conductivity may be applied to an inner layer of the sensor conductive layer. As an example, each of the first sensor conductive layer MTL1 and the second sensor conductive layer MTL2 may have a three-layer structure of titanium / aluminum / titanium or a three-layer structure of titanium / copper / titanium. When the first sensor conductive layer MTL1 and the second sensor conductive layer MTL2 have a three-layer structure of titanium / copper / titanium, the first sensor conductive layer MTL1 and the second sensor conductive layer MTL2 may have lower resistance characteristics than when they have a three-layer structure of titanium / aluminum / titanium.

[0106] The first sensor conductive layer MTL1 and the second sensor conductive layer MTL2 may include a sensing electrode TE (refer to Figure 6 ), and may further include a trace TL (reference Figure 6 ).

[0107] The first sensor insulating layer ISL2 may be disposed on the first sensor conductive layer MTL1. The second sensor insulating layer ISL3 may be disposed on the second sensor conductive layer MTL2. Each of the first sensor insulating layer ISL2 and the second sensor insulating layer ISL3 may include an inorganic layer or an organic layer.

[0108] As an example, the inorganic layer may include at least one of aluminum oxide, titanium oxide, silicon oxide, silicon nitride, silicon oxynitride, zirconium oxide, and hafnium oxide. The organic layer may include at least one of acrylic resin, methacrylic resin, polyisoprene resin, vinyl resin, epoxy resin, urethane resin, cellulose resin, siloxane resin, polyamide resin, perylene resin, and polyimide resin.

[0109] Figure 5 is a plan view of a display panel DP according to an embodiment of the present disclosure.

[0110] refer to Figure 5 The display panel DP may include a base layer BL, a plurality of pixels PX, a plurality of signal lines SL1 to SLm, DL1 to DLn, EL1 to ELm, CSL1, CSL2 and PL electrically connected to the plurality of pixels PX, a scan driver SDV, a data driver DIC, an emission driver EDV and a plurality of pads PD1.

[0111] The base layer BL may provide a base surface on which elements and lines of the display panel DP are disposed. The base layer BL may include a display area DA and a non-display area NDA. The display area DA may be an area in which pixels PX are disposed to display an image, and the non-display area NDA may be an area in which elements and lines are disposed to drive the pixels PX and do not display an image, and may be disposed adjacent to the display area DA. The display area DA may correspond to an active area AA of the display device DD (refer to FIG. 1 ). Figure 2 ), and the non-display area NDA may correspond to the peripheral area NAA of the display device DD (refer to Figure 2 ).

[0112] Each of the pixels PX may include a pixel driving circuit including a plurality of transistors (eg, a switching transistor, a driving transistor, etc.), and a capacitor and a light emitting element electrically connected to the pixel driving circuit. Each of the pixels PX may emit light in response to an electrical signal applied thereto.

[0113] Each of the scan driver SDV, the data driver DIC, and the emission driver EDV may be disposed in the non-display area NDA, however, the present disclosure should not be limited thereto or thereby. According to an embodiment, at least one of the scan driver SDV, the data driver DIC, and the emission driver EDV may be disposed in the display area DA, and thus, the size of the non-display area NDA may be reduced.

[0114] The signal lines SL1 to SLm, DL1 to DLn, EL1 to ELm, CSL1, CSL2, and PL may include a plurality of scan lines SL1 to SLm, a plurality of data lines DL1 to DLn, a plurality of emission lines EL1 to ELm, a first control line CSL1, a second control line CSL2, and a power line PL. Each of m and n is a natural number greater than 1. Each of the pixels PX may be electrically connected to a corresponding scan line among the scan lines SL1 to SLm, a corresponding data line among the data lines DL1 to DLn, and a corresponding emission line among the emission lines EL1 to ELm. Meanwhile, more types of signal lines may be provided in the display panel DP depending on the configuration of the pixel driving circuit of the pixel PX.

[0115] The scan lines SL1 to SLm may extend in the first direction DR1 and may be electrically connected to the scan driver SDV. The data lines DL1 to DLn may extend in the second direction DR2 and may be electrically connected to the data driver DIC. The emission lines EL1 to ELm may extend in the first direction DR1 and may be electrically connected to the emission driver EDV.

[0116] The power line PL may include a portion extending in the first direction DR1 and a portion extending in the second direction DR2. The portion of the power line PL extending in the first direction DR1 and the portion of the power line PL extending in the second direction DR2 may be disposed on different layers from each other and may be connected to each other via a contact hole, however, they should not be limited thereto or thereby. According to an embodiment, the portion of the power line PL extending in the first direction DR1 and the portion of the power line PL extending in the second direction DR2 may be disposed on the same layer and may be provided integrally with each other.

[0117] A portion of the power line PL extending in the first direction DR1 may extend to the display area DA and may be electrically connected to the pixel PX, and a portion of the power line PL extending in the second direction DR2 may be disposed in the non-display area NDA and may extend to the pad PD1. The power line PL may receive a power voltage and may provide the pixel PX with the power voltage.

[0118] The first control line CSL1 may be electrically connected to the scan driver SDV. The second control line CSL2 may be electrically connected to the emission driver EDV.

[0119] The pad PD1 may be disposed adjacent to the lower end of the non-display area NDA. The pad PD1 may be disposed closer to the lower end of the display panel DP than the data driver DIC. The pads PD1 may be arranged to be spaced apart from each other in the first direction DR1. The pad PD1 may be electrically connected to a circuit board that provides signals to control operations of the scan driver SDV, the data driver DIC, and the emission driver EDV.

[0120] The corresponding pad PD1 may be connected to a corresponding signal line among the signal lines SL1 to SLm, DL1 to DLn, EL1 to ELm, CSL1, CSL2, and PL. As an example, the power line PL, the first and second control lines CSL1 and CSL2, and the data lines DL1 to DLn may be connected to the corresponding pad PD1. The data lines DL1 to DLn may be connected to the corresponding pad PD1 via the data driver DIC.

[0121] The scan driver SDV may generate a plurality of scan signals in response to the scan control signal. The scan signals may be applied to the pixels PX via the scan lines SL1 to SLm. The data driver DIC may generate a plurality of data voltages corresponding to the image signals in response to the data control signal. The data voltages may be applied to the pixels PX via the data lines DL1 to DLn. The emission driver EDV may generate a plurality of emission signals in response to the emission control signal. The emission signals may be applied to the pixels PX via the emission lines EL1 to ELm.

[0122] The pixel PX may receive a data voltage in response to a scan signal. The pixel PX may emit light having a brightness corresponding to the data voltage in response to an emission signal, and thus, an image may be displayed. The emission time of the pixel PX may be controlled by the emission signal. Accordingly, the display panel DP may display an image through the display area DA using the pixel PX.

[0123] Figure 6 is a plan view of an input sensor ISP according to an embodiment of the present disclosure.

[0124] refer to Figure 6 The input sensor ISP may include a sensing area AA-S and a non-sensing area NAA-S defined adjacent to the sensing area AA-S. The sensing area AA-S may correspond to the display device DD (refer to Figure 2 ) of the active area AA (reference Figure 2 ). The sensing electrode TE of the input sensor ISP may be disposed in the sensing area AA-S and may sense the external input TC (reference Figure 1 ). The non-sensing area NAA-S may correspond to the display device DD (refer to Figure 2 ) of the peripheral area NAA (reference Figure 2 ). Elements and lines may be disposed in the non-sensing area NAA-S to drive the sensing electrodes TE disposed in the sensing area AA-S.

[0125] The input sensor ISP may include a sensing electrode TE, a trace TL, and a sensing controller TC disposed on a sensor substrate layer ISL1.

[0126] The sensing electrode TE may include a first sensing electrode TE1 and a second sensing electrode TE2 electrically insulated from the first sensing electrode TE1 while intersecting the first sensing electrode TE1 when viewed in a plane. The input sensor ISP may obtain information about external input based on a change in mutual capacitance between the first sensing electrode TE1 and the second sensing electrode TE2.

[0127] Each of the first sensing electrodes TE1 may extend in the first direction DR1, and the first sensing electrodes TE1 may be arranged in the second direction DR2. The first sensing electrodes TE1 may be arranged in a plurality of rows arranged in the second direction DR2. Figure 6 Ten first sensing electrodes TE1 connected to the first trace TL1 are illustrated as a representative example, however, the number of first sensing electrodes TE1 included in the input sensor ISP should not be limited thereto or thereby.

[0128] Each of the second sensing electrodes TE2 may extend in the second direction DR2, and the second sensing electrodes TE2 may be arranged in the first direction DR1. The second sensing electrodes TE2 may be arranged in a plurality of columns arranged in the first direction DR1. Figure 6 Eight second sensing electrodes TE2 connected to the second trace TL2 are illustrated as a representative example, however, the number of second sensing electrodes TE2 included in the input sensor ISP should not be limited thereto or thereby.

[0129] Each of the first sensing electrodes TE1 may include a first sensing pattern SP1 and a first connection pattern BP1. The first sensing patterns SP1 may be arranged in the first direction DR1. The first connection pattern BP1 may connect together the first sensing patterns SP1 adjacent to each other in the first direction DR1. The first connection pattern BP1 may be disposed on the same layer as the first sensing pattern SP1, may extend from the first sensing pattern SP1 when viewed in a plane, and may be provided integrally with the first sensing pattern SP1. The first sensing pattern SP1 and the first connection pattern BP1 may be formed of the same conductive layer by patterning the conductive layer through the same process. However, the first connection pattern BP1 should not be particularly limited as long as the first connection pattern BP1 electrically connects the first sensing patterns SP1 adjacent to each other in the first direction DR1.

[0130] Each of the second sensing electrodes TE2 may include a second sensing pattern SP2 and a second connection pattern BP2. The second sensing patterns SP2 may be arranged in the second direction DR2. The second connection pattern BP2 may connect the second sensing patterns SP2 adjacent to each other in the second direction DR2 together. The second connection pattern BP2 may be disposed on a different layer from the second sensing patterns SP2 and may be connected to the corresponding second sensing patterns SP2 through a contact hole. The second sensing patterns SP2 spaced apart from each other in the second direction DR2 may be electrically connected to each other through the second connection pattern BP2. The second connection pattern BP2 disposed on a different layer from the second sensing pattern SP2 and electrically connected to the second sensing pattern SP2 may be defined as a bridge pattern.

[0131] According to an embodiment, the first sensing pattern SP1, the first connection pattern BP1, and the second sensing pattern SP2 may be disposed on the same layer. The second connection pattern BP2 and the second sensing pattern SP2 may be disposed on different layers from each other. As an example, the first sensing pattern SP1, the first connection pattern BP1, and the second sensing pattern SP2 may be included in the second sensor conductive layer MTL2 (reference Figure 4C ), and the second connection pattern BP2 may be included in the first sensor conductive layer MTL1 (reference Figure 4C ), however, the present disclosure should not be limited thereto or thereby. According to an embodiment, the first sensing pattern SP1, the first connection pattern BP1, and the second sensing pattern SP2 may include a first sensor conductive layer MTL1 (reference Figure 4C ), and the second connection pattern BP2 may be included in the second sensor conductive layer MTL2 (reference Figure 4C According to an embodiment, the first sensing pattern SP1, the second sensing pattern SP2, and the second connection pattern BP2 may be disposed on the same layer, and the first connection pattern BP1 and the first sensing pattern SP1 may be disposed on different layers from each other.

[0132] The traces TL may include first traces TL1 and second traces TL2. Each of the first traces TL1 may be connected to the first sensing electrodes TE1. Each of the first traces TL1 may be connected to the first sensing electrodes TE1 arranged in a corresponding row among the first sensing electrodes TE1 arranged in a plurality of rows. Each of the second traces TL2 may be connected to the second sensing electrodes TE2. Each of the second traces TL2 may be connected to the second sensing electrodes TE2 arranged in a corresponding column among the second sensing electrodes TE2 arranged in a plurality of columns.

[0133] The second traces TL2 may be respectively connected to lower ends of second sensing electrodes TE2 adjacent to the sensing controller TC. Each of the second traces TL2 may extend from a lower end of a corresponding second sensing electrode TE2 in the non-sensing area NAA-S and may be connected to the sensing controller TC.

[0134] The first trace TL1 may be connected to the left end or the right end of the first sensing electrode TE1. As an example, among the first traces TL1, each of the first traces TL1 connected to the first sensing electrodes TE1 arranged in odd rows may be connected to the left end of the corresponding first sensing electrode TE1 among the first sensing electrodes TE1 arranged in odd rows. Among the first traces TL1, each of the first traces TL1 connected to the first sensing electrodes TE1 arranged in even rows may be connected to the right end of the corresponding first sensing electrode TE1 among the first sensing electrodes TE1 arranged in even rows. Each of the first traces TL1 may extend from the left end or the right end of the corresponding first sensing electrode TE1 in the non-sensing area NAA-S in a direction parallel to the first direction DR1 and in a direction parallel to the second direction DR2, and may be connected to the sensing controller TC.

[0135] The first trace TL1 may be disposed on a different layer from at least a portion of the second sensing electrode TE2. As an example, the first trace TL1 may be disposed on a different layer from the second sensing pattern SP2. According to an embodiment, the first trace TL1 may include a first sensor conductive layer MTL1 (reference Figure 4C ), and the second sensing pattern SP2 may be included in the second sensor conductive layer MTL2 (reference Figure 4C ), however, the present disclosure should not be limited thereto or thereby.

[0136] The sensing controller TC may be disposed in the non-sensing area NAA-S. The sensing controller TC may be disposed closer to the lower end of the sensor substrate layer ISL1. The sensing controller TC may be electrically connected to the trace TL. The sensing controller TC may apply a signal to the sensing electrode TE through the trace TL, or may receive a signal from the sensing electrode TE through the trace TL. The sensing controller TC may include a controller, and may generate a coordinate value of a location providing an external input based on a signal received from the sensing electrode TE. However, the present disclosure should not be limited to this or thereby. According to an embodiment, the sensing controller TC may include sensing pads that are spaced apart from each other and are respectively connected to the traces TL, and the sensing pads may be electrically connected to a circuit board that provides a driving signal.

[0137] A driving signal for driving the first sensing electrode TE1 and the second sensing electrode TE2 may be applied from the sensing controller TC to the first sensing electrode TE1 and the second sensing electrode TE2 through the second trace TL2. A signal including information sensed by the first sensing electrode TE1 and the second sensing electrode TE2 may be output through the first trace TL1, however, the present disclosure should not be limited thereto or thereby.

[0138] Fig. 7A and Figure 7Bis an enlarged plan view of the first sensing pattern SP1 according to an embodiment of the present disclosure. Fig. 7A and Figure 7B A portion of the first sensing pattern SP1 is shown, and the detailed description of the first sensing pattern SP1 may be applied to the second sensing pattern SP2 (refer to Figure 6 ). Hereinafter, the first sensing pattern SP1 will be referred to as the sensing pattern SP1.

[0139] Display panel DP (reference Figure 2 ) may include light emitting regions PXA1, PXA2, and PXA3 and non-light emitting regions NPXA surrounding the light emitting regions PXA1, PXA2, and PXA3. For ease of explanation, Fig. 7A and Figure 7B The light emitting regions PXA1 , PXA2 , and PXA3 and the non-light emitting region NPXA overlapping the sensing pattern SP1 are illustrated.

[0140] The light emitting regions PXA1, PXA2, and PXA3 may include a first light emitting region PXA1, a second light emitting region PXA2, and a third light emitting region PXA3. The first light emitting region PXA1, the second light emitting region PXA2, and the third light emitting region PXA3 may be distinguished from each other according to the color of light emitted from the light emitting regions. The first light emitting region PXA1 may emit a first color light, the second light emitting region PXA2 may emit a second color light, and the third light emitting region PXA3 may emit a third color light, and the first color light, the second color light, and the third color light may be different from each other. As an example, the first color light may be blue light, the second color light may be red light, and the third color light may be green light, however, the present disclosure should not be limited thereto or thereby.

[0141] The non-light emitting area NPXA may surround the first light emitting area PXA1, the second light emitting area PXA2, and the third light emitting area PXA3. The non-light emitting area NPXA may define a boundary between the first light emitting area PXA1, the second light emitting area PXA2, and the third light emitting area PXA3. Accordingly, the non-light emitting area NPXA may prevent color mixing between the first light emitting area PXA1, the second light emitting area PXA2, and the third light emitting area PXA3.

[0142] Depending on the color of the emitted light and the display panel DP (reference Figure 2 ), the first light emitting area PXA1, the second light emitting area PXA2, and the third light emitting area PXA3 may have sizes designed in various ways. The first light emitting area PXA1, the second light emitting area PXA2, and the third light emitting area PXA3 may have sizes different from each other. As an example, among the first light emitting area PXA1, the second light emitting area PXA2, and the third light emitting area PXA3, the first light emitting area PXA1 may have the largest size.

[0143] When viewed in a plane, each of the first light-emitting region PXA1, the second light-emitting region PXA2, and the third light-emitting region PXA3 may have various shapes (e.g., a polygonal shape, a circular shape, or an elliptical shape). In the present embodiment, the term "polygonal shape" as used herein may include a polygonal shape in a mathematical sense and a polygonal shape with curved vertices. The shapes of the first light-emitting region PXA1, the second light-emitting region PXA2, and the third light-emitting region PXA3 may correspond to the shapes of the pixels defined by the pixel defining layer PDL (reference Fig. 8A ) defined light-emitting opening PX-OP (reference Fig. 8A ), and the shape of the vertex may depend on the pixel definition layer PDL (reference Fig. 8A )’s etching characteristics.

[0144] The first sensing electrode TE1 (reference Figure 6 ) and the second sensing electrode TE2 (reference Figure 6 ) may include a mesh pattern MP, and a mesh opening M-OP is defined by the mesh pattern MP. The mesh opening M-OP may overlap with the first light emitting area PXA1, the second light emitting area PXA2, and the third light emitting area PXA3. The mesh pattern MP may not overlap with the first light emitting area PXA1, the second light emitting area PXA2, and the third light emitting area PXA3, and may overlap with the non-light emitting area NPXA. Accordingly, the light emitting efficiency of the display panel DP in the first light emitting area PXA1, the second light emitting area PXA2, and the third light emitting area PXA3 may not be deteriorated.

[0145] Because the first sensing electrode TE1 (ref. Figure 6 ) includes the mesh pattern MP, so the display panel DP (reference Fig. 8A ) of the first sensing electrode TE1 and the second sensing electrode CE (reference Fig. 8A ) can be reduced further. Figure 6 ) includes the mesh pattern MP, so the display panel DP (reference Fig. 8A ) of the second sensing electrode TE2 and the second electrode CE (reference Fig. 8A ) can be reduced more. As a result, the touch sensitivity of the input sensor ISP can be improved.

[0146] Each of the first light emitting area PXA1, the second light emitting area PXA2, and the third light emitting area PXA3 may be provided in plural, and each of the first light emitting area PXA1, the second light emitting area PXA2, and the third light emitting area PXA3 may be arranged in a predetermined manner. The arrangement and size of the mesh openings M-OP may be changed in various ways depending on the arrangement and size of the first light emitting area PXA1, the second light emitting area PXA2, and the third light emitting area PXA3, and therefore, the shape of the mesh pattern MP may be changed corresponding to the arrangement and size of the first light emitting area PXA1, the second light emitting area PXA2, and the third light emitting area PXA3.

[0147] refer to Fig. 7A , each of the first light emitting region PXA1 and the third light emitting region PXA3 may extend in a direction parallel to the second direction DR2. Each of the first light emitting region PXA1 and the third light emitting region PXA3 may include a long side extending in a direction parallel to the second direction DR2. The length of the first light emitting region PXA1 in the second direction DR2 may be greater than the length of the third light emitting region PXA3 in the second direction DR2. The second light emitting region PXA2 may include a long side extending in a direction parallel to the first direction DR1. The length of the second light emitting region PXA2 in the second direction DR2 may be less than the length of each of the first light emitting region PXA1 and the third light emitting region PXA3 in the second direction DR2.

[0148] Each of the first light emitting region PXA1, the second light emitting region PXA2, and the third light emitting region PXA3 may be provided in plurality. The second light emitting region PXA2 and the third light emitting region PXA3 may be alternately arranged in a direction parallel to the second direction DR2 to form a first column, and the first light emitting region PXA1 may be arranged in a direction parallel to the second direction DR2 to form a second column. The first column may be alternately arranged with the second column in the first direction DR1. When viewed in the first direction DR1, each of the first light emitting regions PXA1 may overlap at least a portion of each of the second light emitting region PXA2 and the third light emitting region PXA3.

[0149] The mesh pattern MP may include a first line portion P1, a second line portion P2, and a third line portion P3. The first line portion P1, the second line portion P2, and the third line portion P3 may have an integral shape. The first line portion P1, the second line portion P2, and the third line portion P3 may be connected to each other and may define a mesh opening M-OP overlapping the first light emitting area PXA1, the second light emitting area PXA2, and the third light emitting area PXA3. The first line portion P1, the second line portion P2, and the third line portion P3 may be formed by patterning a conductive layer to form a mesh opening M-OP passing through the conductive layer. The first line portion P1, the second line portion P2, and the third line portion P3 may be disposed in the non-light emitting area NPXA and may have a shape surrounding the first light emitting area PXA1, the second light emitting area PXA2, and the third light emitting area PXA3.

[0150] The first line portion P1 and the second line portion P2 may correspond to a portion of the mesh pattern MP extending in the first direction DR1. The first line portion P1 may be disposed between the first light emitting regions PXA1 facing each other in the second direction DR2 and between the second light emitting region PXA2 and the third light emitting region PXA3 facing the second light emitting region PXA2 in the second direction DR2. The second line portion P2 may overlap the first light emitting region PXA1 when viewed in the first direction DR1, and may be disposed between the second light emitting region PXA2 and the third light emitting region PXA3 adjacent to the second light emitting region PXA2 in the second direction DR2.

[0151] The third line portion P3 may correspond to a portion of the mesh pattern MP extending in a direction parallel to the second direction DR2. The third line portion P3 may extend from the first line portion P1 in a direction parallel to the second direction DR2. The third line portion P3 may be disposed between the first light emitting region PXA1 and the second light emitting region PXA2 adjacent to each other in the first direction DR1, and between the first light emitting region PXA1 and the third light emitting region PXA3 adjacent to each other in the first direction DR1.

[0152] refer to Figure 7B , each of the first light emitting region PXA1 and the second light emitting region PXA2 may have a substantially square shape when viewed in a plane. The sensing pattern SP1 may include two types of third light emitting regions PXA3 having long sides extending in different directions. The third light emitting region PXA3 may include long sides extending in the fourth direction DR4 or the fifth direction DR5.

[0153] In the present embodiment, when viewed in a plane defined by the first direction DR1 and the second direction DR2, the fourth direction DR4 may intersect each of the first direction DR1 and the second direction DR2. When viewed in a plane defined by the first direction DR1 and the second direction DR2, the fifth direction DR5 may intersect each of the first direction DR1, the second direction DR2, and the fourth direction DR4.

[0154] Each of the first light emitting region PXA1, the second light emitting region PXA2, and the third light emitting region PXA3 may be provided in plurality. The first light emitting region PXA1 and the second light emitting region PXA2 may be alternately arranged in the first direction DR1 and the second direction DR2. The first light emitting region PXA1 and the third light emitting region PXA3 extending in the fifth direction DR5 may be alternately arranged with each other in the fifth direction DR5, and the first light emitting region PXA1 and the third light emitting region PXA3 extending in the fourth direction DR4 may be alternately arranged with each other in the fourth direction DR4. The second light emitting region PXA2 and the third light emitting region PXA3 extending in the fourth direction DR4 may be alternately arranged with each other in the fourth direction DR4, and the second light emitting region PXA2 and the third light emitting region PXA3 extending in the fifth direction DR5 may be alternately arranged with each other in the fifth direction DR5.

[0155] The mesh pattern MP may include a fourth line portion P4 and a fifth line portion P5. The fourth line portion P4 and the fifth line portion P5 may be connected to each other to have an overall shape and may define a mesh opening M-OP overlapping the first light emitting area PXA1, the second light emitting area PXA2, and the third light emitting area PXA3. The fourth line portion P4 and the fifth line portion P5 may be formed by patterning a conductive layer to form a mesh opening M-OP passing through the conductive layer. The fourth line portion P4 and the fifth line portion P5 may be disposed in the non-light emitting area NPXA and may have a shape surrounding the first light emitting area PXA1, the second light emitting area PXA2, and the third light emitting area PXA3.

[0156] The fourth line portion P4 may correspond to a portion of the mesh pattern MP extending in the fourth direction DR4. The fifth line portion P5 may correspond to a portion of the mesh pattern MP extending in the fifth direction DR5. When viewed in a plane, the fourth line portion P4 may be alternately arranged with the fifth line portion P5.

[0157] at the same time, Fig. 7A and Figure 7B The arrangement and shape of the light emitting areas PXA1, PXA2, and PXA3 and the shape of the mesh pattern MP shown in FIG. 1 are merely examples, and the present disclosure should not be limited thereto or thereby.

[0158] Fig. 8A and Figure 8Bis a cross-sectional view of a display device DD according to an embodiment of the present disclosure. Figure 8C is a cross-sectional view of a display device DD′ according to a comparative example.

[0159] refer to Fig. 8A and Figure 8B , the display panel DP may include a base layer BL, a circuit element layer DP-CL, a display element layer DP-OLED and an encapsulation layer TFL. Figures 1 to 7B The details of the base layer BL, the circuit element layer DP-CL, the display element layer DP-OLED and the encapsulation layer TFL of the display panel DP described above can be applied to Fig. 8A and Figure 8B The base layer BL, the circuit element layer DP-CL, the display element layer DP-OLED and the encapsulation layer TFL.

[0160] The display element layer DP-OLED may include a plurality of light emitting elements OL1, OL2, and OL3 and a pixel defining layer PDL. The light emitting elements OL1, OL2, and OL3 may include first, second, and third light emitting elements OL1, OL2, and OL3 corresponding to first, second, and third light emitting areas PXA1, PXA2, and PXA3, respectively.

[0161] Each of the light emitting elements OL1, OL2 and OL3 may be an organic light emitting element, an inorganic light emitting element, a quantum dot light emitting element, a micro LED, a nano LED, a quantum dot light emitting element, an electrophoretic light emitting element or an electrowetting light emitting element. However, the light emitting elements OL1, OL2 and OL3 should not be particularly limited as long as they generate light in response to an electrical signal or the amount of light is controlled by the electrical signal.

[0162] Each of the first, second, and third light emitting elements OL1, OL2, and OL3 may include one of the first electrodes AE1, AE2, and AE3, one of the light emitting layers EM1, EM2, and EM3, and a second electrode CE.

[0163] The first electrodes AE1, AE2, and AE3 of the first light emitting element OL1, the second light emitting element OL2, and the third light emitting element OL3 may be disposed on the circuit element layer DP-CL and may be spaced apart from each other. The first electrodes AE1, AE2, and AE3 of the first light emitting element OL1, the second light emitting element OL2, and the third light emitting element OL3 may be electrically connected to the driving elements of the corresponding circuit element layer DP-CL, respectively.

[0164] Each of the first electrodes AE1, AE2, and AE3 may be a transflective electrode or a reflective electrode. As an example, the first electrodes AE1, AE2, and AE3 may include a reflective layer containing silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or a compound thereof, and a transparent electrode layer or a semi-transparent electrode layer formed on the reflective layer. The transparent electrode layer or the semi-transparent electrode layer may include zinc oxide (ZnO), indium oxide (IO), indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), or aluminum-doped zinc oxide (Al-ZnO).

[0165] The pixel defining layer PDL may be provided with light emitting openings PX-OP defined therethrough. Each of the light emitting openings PX-OP may expose at least a portion of a corresponding first electrode of the first electrodes AE1, AE2, and AE3 of the first light emitting element OL1, the second light emitting element OL2, and the third light emitting element OL3. The areas of the first electrodes AE1, AE2, and AE3 exposed through the light emitting openings PX-OP and not covered by the pixel defining layer PDL may correspond to light emitting areas PXA1, PXA2, and PXA3, respectively. The area in which the pixel defining layer PDL is provided may correspond to the non-light emitting area NPXA.

[0166] The pixel defining layer PDL may have light absorption characteristics. The pixel defining layer PDL may have a black color and may include a black colorant. The black colorant may include a black pigment or a black dye. The black colorant may include carbon black, or a metal material (e.g., chromium, etc.) or an oxide thereof. However, the pixel defining layer PDL should not be limited to this or thereby.

[0167] The light-emitting layers EM1, EM2, and EM3 of the first light-emitting element OL1, the second light-emitting element OL2, and the third light-emitting element OL3 may be disposed on the corresponding first electrodes AE1, AE2, and AE3, respectively. The light-emitting layers EM1, EM2, and EM3 of the first light-emitting element OL1, the second light-emitting element OL2, and the third light-emitting element OL3 may be disposed to correspond to the light-emitting openings PX-OP, respectively. Each of the light-emitting layers EM1, EM2, and EM3 may emit one of red light, green light, and blue light. However, the color of light emitted from the light-emitting layers EM1, EM2, and EM3 should not be limited thereto or thereby. According to an embodiment, the light-emitting layers EM1, EM2, and EM3 of the first light-emitting element OL1, the second light-emitting element OL2, and the third light-emitting element OL3 may be provided as a common layer, and may emit blue light or white light as source light.

[0168] The second electrodes CE of the first light emitting element OL1, the second light emitting element OL2, and the third light emitting element OL3 may be disposed on the light emitting layers EM1, EM2, and EM3. The second electrodes CE of the first light emitting element OL1, the second light emitting element OL2, and the third light emitting element OL3 may be a common layer formed integrally to overlap the first light emitting area PXA1, the second light emitting area PXA2, and the third light emitting area PXA3 and the non-light emitting area NPXA. That is, the second electrodes CE of the first light emitting element OL1, the second light emitting element OL2, and the third light emitting element OL3 may be a common electrode to which a common voltage is applied.

[0169] The encapsulation layer TFL may be disposed on the first, second, and third light emitting elements OL1, OL2, and OL3. The encapsulation layer TFL may encapsulate and protect the first, second, and third light emitting elements OL1, OL2, and OL3.

[0170] The encapsulation layer TFL may include at least one of an inorganic layer and an organic layer. As an example, the encapsulation layer TFL may include an inorganic layer and an organic layer disposed between the inorganic layers. The inorganic layer of the encapsulation layer TFL may protect the first light emitting element OL1, the second light emitting element OL2, and the third light emitting element OL3 from moisture and oxygen. The organic layer of the encapsulation layer TFL may protect the first light emitting element OL1, the second light emitting element OL2, and the third light emitting element OL3 from foreign substances (e.g., dust particles).

[0171] refer to Fig. 8A , the input sensor ISP may include a sensor base layer ISL1, a first sensor insulating layer ISL2, a second sensor insulating layer ISL3, and a second sensor conductive layer MTL2. Figures 1 to 7B The details of the components of the input sensor ISP described can be applied to Fig. 8A The input sensor ISP component.

[0172] The second sensor conductive layer MTL2 may include a first sensing electrode TE1 (refer to Figure 6 ) and the second sensing pattern SP2 (reference Figure 6 The second sensor conductive layer MTL2 may have a mesh pattern corresponding to the mesh pattern MP (refer to Fig. 7A and Figure 7B ) in a shape and can be set in the non-light emitting area NPXA.

[0173] The second sensor conductive layer MTL2 may include a plurality of conductive layers M1, M2, and M3. The conductive layers M1, M2, and M3 may include a first conductive layer M1, a second conductive layer M2, and a third conductive layer M3. The first conductive layer M1 may be disposed on the first sensor insulating layer ISL2, the second conductive layer M2 may be disposed on the first conductive layer M1, and the third conductive layer M3 may be disposed on the second conductive layer M2.

[0174] The first conductive layer M1 may include a material different from that of the second conductive layer M2 , and the first conductive layer M1 may include a material the same as that of the third conductive layer M3 , however, the present disclosure should not be limited thereto or thereby.

[0175] Each of the first conductive layer M1 and the third conductive layer M3 may have a metal material having anti-corrosion properties. The first conductive layer M1 and the third conductive layer M3 may be disposed on the lower surface and the upper surface of the second conductive layer M2, respectively, and may protect the second conductive layer M2 from scratches generated during the process. In addition, the first conductive layer M1 and the third conductive layer M3 may prevent the second conductive layer M2 from being corroded due to moisture penetration. As an example, the first conductive layer M1 and the third conductive layer M3 may include at least one of molybdenum, titanium, and alloys thereof. However, the materials used for the first conductive layer M1 and the third conductive layer M3 should not be limited thereto or thereby.

[0176] The second conductive layer M2 may include a metal material having a low resistivity. As an example, the second conductive layer M2 may include at least one of gold, silver, copper, aluminum, platinum, and alloys thereof, however, the material for the second conductive layer M2 should not be limited thereto or thereby.

[0177] The second conductive layer M2 may have a thickness greater than that of each of the first conductive layer M1 and the third conductive layer M3. Since the second conductive layer M2 including a material having a relatively low resistivity has a large thickness, the first sensing electrode TE1 (reference Figure 6 ) and the second sensing electrode TE2 (reference Figure 6 ) can be relatively low in resistance.

[0178] The second sensor conductive layer MTL2 may include a recessed portion RP defined in a side surface of the second sensor conductive layer MTL2. The recessed portion RP may be defined in a side surface of the second sensor conductive layer MTL2 defining the mesh openings M-OP. As an example, the second sensor conductive layer MTL2 may include Figure 6 The first sensing pattern SP1, the first connecting pattern BP1, and the second sensing pattern SP2 shown in FIG. 1 and the recessed portion RP may be defined in the side surfaces of the first sensing pattern SP1, the first connecting pattern BP1, and the second sensing pattern SP2. The light absorbing layer ABF may be disposed in the recessed portion RP.

[0179] Among the side surfaces of the first conductive layer M1, the second conductive layer M2, and the third conductive layer M3 of the second sensor conductive layer MTL2, the side surface of the second conductive layer M2 is disposed at a relatively inner side, and thus, a recessed portion RP may be defined. That is, the side surfaces of the first conductive layer M1 and the third conductive layer M3 may protrude more outward than the side surface of the second conductive layer M2. Since the recessed portion RP is defined, the second sensor conductive layer MTL2 may have an undercut structure. The light absorbing layer ABF may be disposed in the recessed portion RP defined in the second sensor conductive layer MTL2.

[0180] The second sensor insulating layer ISL3 may cover the second sensor conductive layer MTL2 and may be disposed on the first sensor insulating layer ISL2. The second sensor insulating layer ISL3 may contact the side surface of the first conductive layer M1 and the side surface and the upper surface of the third conductive layer M3. The second sensor insulating layer ISL3 may not contact the side surface of the second conductive layer M2. The second sensor insulating layer ISL3 may be spaced apart from the side surface of the second conductive layer M2 by the light absorbing layer ABF.

[0181] The light absorbing layer ABF may include a material having a high light absorption coefficient (ie, a low reflective property). As an example, the light absorbing layer ABF may include a molybdenum oxide-based material, such as molybdenum niobium oxide (MoNbO x ) and molybdenum tantalum oxide (MoTaO x In the case where the light absorbing layer ABF includes a molybdenum oxide-based material, the light absorbing layer ABF may be formed by a sputtering process.

[0182] According to an embodiment, the light absorbing layer ABF may include amorphous silicon (a-Si) or silicon carbide (SiC). In the case where the light absorbing layer ABF includes amorphous silicon (a-Si) or silicon carbide (SiC), the light absorbing layer ABF may be deposited by a chemical vapor deposition (CVD) process. The light absorbing layer ABF formed by the chemical vapor deposition process may be more conducive to covering the recessed portion RP than the light absorbing layer ABF formed by the sputtering process.

[0183] refer to Figure 8B , the input sensor ISP may include a first sensor conductive layer MTL1, and the first sensor conductive layer MTL1 may include a first sensing electrode TE1 (refer to Figure 6 ) and the second sensing pattern SP2 (reference Figure 6 The first sensor conductive layer MTL1 may have a mesh pattern corresponding to the mesh pattern MP (refer to Fig. 7A and Figure 7B ) in a shape and can be set in the non-light emitting area NPXA.

[0184] The first sensor conductive layer MTL1 may include conductive layers M1, M2, and M3. The conductive layers M1, M2, and M3 may include a first conductive layer M1, a second conductive layer M2, and a third conductive layer M3. The first conductive layer M1 may be disposed on the sensor substrate layer ISL1, the second conductive layer M2 may be disposed on the first conductive layer M1, and the third conductive layer M3 may be disposed on the second conductive layer M2.

[0185] The first conductive layer M1 may include a material different from that of the second conductive layer M2, and the first conductive layer M1 may include a material the same as that of the third conductive layer M3, however, the present disclosure should not be limited thereto or thereby. Fig. 8A The details of the first conductive layer M1, the second conductive layer M2, and the third conductive layer M3 of the second sensor conductive layer MTL2 described above can be applied to Figure 8B The first conductive layer M1, the second conductive layer M2 and the third conductive layer M3.

[0186] The recessed portion RP may be defined in the side surface of the first sensor conductive layer MTL1. The recessed portion RP may be defined in the side surface of the first sensor conductive layer MTL1 defining the mesh openings M-OP. As an example, the first sensor conductive layer MTL1 may include Figure 6 The second connection pattern BP2 shown in FIG. 1 may be formed in the recessed portion RP, and a recessed portion RP may be defined in a side surface of the second connection pattern BP2. The light absorbing layer ABF may be disposed in the recessed portion RP.

[0187] Among the side surfaces of the first conductive layer M1, the second conductive layer M2, and the third conductive layer M3 of the first sensor conductive layer MTL1, the side surface of the second conductive layer M2 is disposed at a relatively inner side, and thus, a recessed portion RP may be defined. That is, the side surfaces of the first conductive layer M1 and the third conductive layer M3 may protrude more outward than the side surface of the second conductive layer M2. Since the recessed portion RP is defined, the first sensor conductive layer MTL1 may have an undercut structure. The light absorbing layer ABF may be disposed in the recessed portion RP defined in the first sensor conductive layer MTL1.

[0188] The first sensor insulating layer ISL2 may cover the first sensor conductive layer MTL1 and may be disposed on the sensor base layer ISL1. The first sensor insulating layer ISL2 may contact the side surface of the first conductive layer M1 and the side surface and the upper surface of the third conductive layer M3. The first sensor insulating layer ISL2 may not contact the side surface of the second conductive layer M2. The first sensor insulating layer ISL2 may be separated from the side surface of the second conductive layer M2 by the light absorbing layer ABF.

[0189] Since the recessed portion RP is defined in at least one of the side surfaces of the first sensor conductive layer MTL1 and the second sensor conductive layer MTL2 included in the input sensor ISP, and the light absorbing layer ABF is disposed in the recessed portion RP, the reflectivity of the first sensor conductive layer MTL1 and the second sensor conductive layer MTL2 with respect to external light may be reduced. This will be described below with reference to Fig. 8A and Figure 8C Describe in detail.

[0190] refer to Figure 8C , the recessed portion RP may not be defined in the second sensor conductive layer MTL2' of the input sensor ISP' included in the display device DD' according to the comparative example (refer to Fig. 8A and Figure 8B ), and the light absorbing layer ABF may not be provided (reference Fig. 8A and Figure 8B ). Accordingly, in the comparative example, side surfaces of the first conductive layer M1', the second conductive layer M2', and the third conductive layer M3' of the second sensor conductive layer MTL2' may be aligned with each other. That is, the second sensor conductive layer MTL2' according to the comparative example may not have an undercut structure.

[0191] According to the comparative example, external light LL1 incident from the outside of the display device DD′ into the display panel DP may be reflected by the first electrodes AE1, AE2, and AE3 of the light emitting elements OL1, OL2, and OL3 (refer to Fig. 8A ) is reflected. A portion of the reflected light LL2 reflected by the first electrodes AE1, AE2, and AE3 may be incident into the side surface of the second sensor conductive layer MTL2'. The reflected light LL3 reflected by the second sensor conductive layer MTL2' may propagate toward the upper side of the display device DD' through the inclination angles of the side surfaces of the first conductive layer M1', the second conductive layer M2', and the third conductive layer M3'. Accordingly, the reflected light reflected by the first electrodes AE1, AE2, and AE3 and the second sensor conductive layer MTL2' may be observed from the outside of the display device DD'.

[0192] refer to Fig. 8A Since the recessed portion RP is defined in the side surface of the second sensor conductive layer MTL2 and the light absorbing layer ABF is disposed in the recessed portion RP, the reflectivity of the external light LL1 incident from the outside of the display device DD into the display panel DP may be reduced. Fig. 8A1 shows a path of external light LL1. External light LL1 may be incident into light emitting elements OL1, OL2, and OL3, and may be reflected by first electrodes AE1, AE2, and AE3. A portion of reflected light LL2 reflected by first electrodes AE1, AE2, and AE3 may be incident into a side surface of second sensor conductive layer MTL2. At least a portion of reflected light LL2 incident into the side surface of second sensor conductive layer MTL2 may be absorbed by light absorption layer ABF disposed in the side surface of second conductive layer M2. Fig. 8A 1 shows an example in which all of the reflected light LL2 is absorbed by the light absorption layer ABF, however, only a portion of the reflected light LL2 may be absorbed by the light absorption layer ABF. Since the light absorption layer ABF is disposed in the recessed portion RP defined in the side surface of the second sensor conductive layer MTL2, the reflected light LL2 reflected by the first electrodes AE1, AE2, and AE3 may be prevented from being viewed by the user US (refer to FIG. 1 ) after propagating to the upper side of the display device DD. Figure 1 As a result, the reflectivity of the external light may be reduced, and the first electrodes AE1, AE2, and AE3 of the display panel DP may be prevented from being observed.

[0193] In addition, since the recessed portion RP is defined in the side surface of the second sensor conductive layer MTL2 or the first sensor conductive layer MTL1 and the light absorbing layer ABF is disposed in the recessed portion RP, a process of cutting a portion of the sensing pattern of the input sensor ISP to improve the visibility of the display panel DP may be omitted. That is, visibility may be improved without cutting a portion of the sensing pattern. Since the process of cutting a portion of the sensing pattern is omitted, the sensing electrode TE (refer to Figure 6 ) resistance, and can improve the sensing performance of the input sensor ISP.

[0194] Fig. 9A , Fig. 9B and Fig. 9C is a cross-sectional view of a display device DD according to an embodiment of the present disclosure. Fig. 9A , Fig. 9B and Fig. 9C Cross-sectional views are provided to illustrate various embodiments of the present disclosure.

[0195] refer to Fig. 9A , Fig. 9B and Fig. 9C , the input sensor ISP may include a sensor base layer ISL1, a first sensor insulating layer ISL2, a second sensor insulating layer ISL3, a first sensor conductive layer MTL1, and a second sensor conductive layer MTL2. Figures 1 to 8B The details of the components of the input sensor ISP described can be applied to Fig. 9A , Fig. 9B and Fig. 9C The input sensor ISP component.

[0196] Each of the first sensor conductive layer MTL1 and the second sensor conductive layer MTL2 may have a shape corresponding to the mesh pattern MP (refer to Fig. 7A and Figure 7B ) and may be disposed in the non-light emitting area NPXA. The first sensor conductive layer MTL1 may be disposed to overlap with the second sensor conductive layer MTL2 in the non-light emitting area NPXA.

[0197] Some patterns formed in the first sensor conductive layer MTL1 may be connected to some patterns formed in the second sensor conductive layer MTL2 via contact portions LCT defined by the first sensor insulating layer ISL2 .

[0198] The first sensor conductive layer MTL1 may further include a dummy pattern disposed to overlap with the sensing pattern formed in the second sensor conductive layer MTL2 and to be electrically insulated from the sensing pattern formed in the second sensor conductive layer MTL2 , however, the present disclosure should not be limited thereto or thereby.

[0199] Each of the first sensor conductive layer MTL1 and the second sensor conductive layer MTL2 may include a first conductive layer M1, a second conductive layer M2, and a third conductive layer M3. The second conductive layer M2 may include a material different from that of each of the first conductive layer M1 and the third conductive layer M3, and the first conductive layer M1 may include a material the same as that of the third conductive layer M3. The first sensor conductive layer MTL1 may have a stacking structure substantially the same as that of the second sensor conductive layer MTL2, however, the present disclosure should not be limited thereto or thereby. Reference Fig. 8A and Figure 8B The details of the first conductive layer M1, the second conductive layer M2, and the third conductive layer M3 described can be applied to Fig. 9A , Fig. 9B and Fig. 9C The first conductive layer M1, the second conductive layer M2 and the third conductive layer M3.

[0200] A line width W2 of a pattern formed in the second sensor conductive layer MTL2 (hereinafter, referred to as a second line width W2) may be greater than a line width W1 of a pattern formed in the first sensor conductive layer MTL1 (hereinafter, referred to as a first line width W1). When viewed in a plane, a side surface of the first sensor conductive layer MTL1 may overlap with the second sensor conductive layer MTL2. That is, a side surface of the second sensor conductive layer MTL2 may be disposed outside a side surface of the first sensor conductive layer MTL1.

[0201] The first line width W1 of the first sensor conductive layer MTL1 may correspond to the mesh pattern MP (refer to Fig. 7A and Figure 7B The second line width W2 of the second sensor conductive layer MTL2 may correspond to the mesh pattern MP (refer to Fig. 7A and Figure 7B ) line width.

[0202] refer to Fig. 9A , the recess portion RP may be defined in the side surface of the second sensor conductive layer MTL2 , the light absorbing layer ABF may be disposed in the recess portion RP, and the recess portion RP may not be defined in the side surface of the first sensor conductive layer MTL1 .

[0203] In detail, the side surface of the first conductive layer M1 and the side surface of the third conductive layer M3 of the second sensor conductive layer MTL2 may protrude more outward than the side surface of the second conductive layer M2. Since the recessed portion RP is defined, the second sensor conductive layer MTL2 may have an undercut structure. The light absorbing layer ABF may be disposed in the recessed portion RP defined in the second sensor conductive layer MTL2. The second sensor insulating layer ISL3 may cover the second sensor conductive layer MTL2 and may be disposed on the first sensor insulating layer ISL2. The second sensor insulating layer ISL3 may contact the side surface of the first conductive layer M1 and the side surface and the upper surface of the third conductive layer M3 of the second sensor conductive layer MTL2. The second sensor insulating layer ISL3 may not contact the side surface of the second conductive layer M2 of the second sensor conductive layer MTL2. The second sensor insulating layer ISL3 may be spaced apart from the side surface of the second conductive layer M2 of the second sensor conductive layer MTL2 by the light absorbing layer ABF.

[0204] Side surfaces of the first conductive layer M1 , the second conductive layer M2 , and the third conductive layer M3 of the first sensor conductive layer MTL1 , in which the recessed portion RP is not defined, may be substantially aligned with each other.

[0205] At least a portion of the reflected light propagating to the side surface of the second sensor conductive layer MTL2 among the external light reflected by the first electrodes of the light emitting elements OL1, OL2, and OL3 may be absorbed by the light absorption layer ABF disposed in the recessed portion RP. Accordingly, the ratio of the external light reflected to the upper side of the display device DD may be reduced. Because the second line width W2 of the second sensor conductive layer MTL2 is greater than the first line width W1 of the first sensor conductive layer MTL1, even if the reflected light propagating to the side surface of the first sensor conductive layer MTL1 among the external light reflected by the first electrodes of the light emitting elements OL1, OL2, and OL3 is reflected by the side surface of the first sensor conductive layer MTL1, the reflected light may be prevented from propagating to the upper side of the display device DD by the second sensor conductive layer MTL2 having the second line width W2 greater than the first line width W1.

[0206] refer to Fig. 9B , a recess portion RP may be defined in each of the first sensor conductive layer MTL1 and the second sensor conductive layer MTL2 , and the light absorbing layer ABF may be disposed in the recess portion RP.

[0207] In detail, the side surface of the first conductive layer M1 and the side surface of the third conductive layer M3 of the first sensor conductive layer MTL1 may protrude more outward than the side surface of the second conductive layer M2. Since the recessed portion RP is defined, the first sensor conductive layer MTL1 may have an undercut structure. In addition, the light absorbing layer ABF may be disposed in the recessed portion RP defined in the first sensor conductive layer MTL1. The first sensor insulating layer ISL2 may cover the first sensor conductive layer MTL1 and may be disposed on the sensor base layer ISL1. The first sensor insulating layer ISL2 may contact the side surface of the first conductive layer M1 of the first sensor conductive layer MTL1 and the side surface and the upper surface of the third conductive layer M3. The first sensor insulating layer ISL2 may not contact the side surface of the second conductive layer M2 of the first sensor conductive layer MTL1. The first sensor insulating layer ISL2 may be spaced apart from the side surface of the second conductive layer M2 of the first sensor conductive layer MTL1 by the light absorbing layer ABF.

[0208] The side surface of the first conductive layer M1 and the side surface of the third conductive layer M3 of the second sensor conductive layer MTL2 may protrude more outward than the side surface of the second conductive layer M2. Since the recessed portion RP is defined, the second sensor conductive layer MTL2 may have an undercut structure. In addition, the light absorbing layer ABF may be disposed in the recessed portion RP defined in the second sensor conductive layer MTL2. The second sensor insulating layer ISL3 may cover the second sensor conductive layer MTL2 and may be disposed on the first sensor insulating layer ISL2. The second sensor insulating layer ISL3 may contact the side surface of the first conductive layer M1 of the second sensor conductive layer MTL2 and the side surface and the upper surface of the third conductive layer M3. The second sensor insulating layer ISL3 may not contact the side surface of the second conductive layer M2 of the second sensor conductive layer MTL2. The second sensor insulating layer ISL3 may be spaced apart from the side surface of the second conductive layer M2 of the second sensor conductive layer MTL2 by the light absorbing layer ABF.

[0209] Since the recessed portion RP is defined in each of the side surfaces of the first sensor conductive layer MTL1 and the second sensor conductive layer MTL2, and the light absorbing layer ABF is disposed in the recessed portion RP, at least a portion of the reflected light propagating to the side surface of the first sensor conductive layer MTL1 and at least a portion of the reflected light propagating to the side surface of the second sensor conductive layer MTL2, among the external light reflected by the first electrodes of the light emitting elements OL1, OL2, and OL3, can be absorbed by the light absorbing layer ABF disposed in the recessed portion RP. As a result, the ratio of the external light reflected by the first electrodes of the light emitting elements OL1, OL2, and OL3, the first sensor conductive layer MTL1, and the second sensor conductive layer MTL2 to the upper side of the display device DD can be reduced. Since the recessed portion RP is defined in each of the side surfaces of the first sensor conductive layer MTL1 and the second sensor conductive layer MTL2, and the light absorbing layer ABF is disposed in the recessed portion RP, the reflectivity of the external light can be reduced, and the visibility of the display panel DP can be improved.

[0210] refer to Fig. 9C , a recessed portion RP may be defined in a side surface of the first sensor conductive layer MTL1, and the light absorbing layer ABF may be disposed in the recessed portion RP. The recessed portion RP may not be defined in a side surface of the second sensor conductive layer MTL2.

[0211] In detail, the side surface of the first conductive layer M1 and the side surface of the third conductive layer M3 of the first sensor conductive layer MTL1 may protrude more outward than the side surface of the second conductive layer M2. Since the recessed portion RP is defined, the first sensor conductive layer MTL1 may have an undercut structure. The light absorbing layer ABF may be disposed in the recessed portion RP defined by the first sensor conductive layer MTL1. The first sensor insulating layer ISL2 may cover the first sensor conductive layer MTL1 and may be disposed on the sensor base layer ISL1. The first sensor insulating layer ISL2 may contact the side surface of the first conductive layer M1 of the first sensor conductive layer MTL1 and the side surface and the upper surface of the third conductive layer M3. The first sensor insulating layer ISL2 may not contact the side surface of the second conductive layer M2 of the first sensor conductive layer MTL1. The first sensor insulating layer ISL2 may be spaced apart from the side surface of the second conductive layer M2 of the first sensor conductive layer MTL1 by the light absorbing layer ABF.

[0212] Side surfaces of the first conductive layer M1 , the second conductive layer M2 , and the third conductive layer M3 of the second sensor conductive layer MTL2 , in which the recessed portion RP is not defined, may be substantially aligned with each other.

[0213] Among the external light reflected by the first electrodes of the light emitting elements OL1, OL2, and OL3, at least a portion of the reflected light propagating to the side surface of the first sensor conductive layer MTL1 may be absorbed by the light absorption layer ABF disposed in the recessed portion RP. Accordingly, the ratio of the external light reflected to the upper side of the display device DD may be reduced.

[0214] Fig. 10A , Fig. 10B , Fig. 10C , Fig. 10D and Fig.10E 2 is a cross-sectional view showing a process of a method for manufacturing a display device according to an embodiment of the present disclosure.

[0215] Fig. 10A , Fig. 10B , Fig. 10C , Fig. 10D and Fig.10E The schematic diagram shows the formation of the first sensor conductive layer MTL1 (refer to 8A to 9C ) or the second sensor conductive layer MTL2 (reference 8A to 9C ) to allow the recessed portion RP to be defined in the first sensor conductive layer MTL1 (refer to 8A to 9C ) or the second sensor conductive layer MTL2 (reference 8A to 9C ) in the side surface and the light absorbing layer ABF is disposed in the recessed portion RP.

[0216] In the first sensor conductive layer MTL1 (reference 8A to 9C) in which the recessed portion RP and the light absorbing layer ABF are formed, Fig. 10A and Fig. 10B The insulating layer ISL may correspond to the sensor base layer ISL1 (reference 8A to 9C ).in addition, Fig. 10A and Fig. 10B The first conductive layer M1, the second conductive layer M2 and the third conductive layer M3 may correspond to the first sensor conductive layer MTL1 (refer to 8A to 9C ) of the first conductive layer M1, the second conductive layer M2 and the third conductive layer M3 (reference 8A to 9C ).

[0217] In the second sensor conductive layer MTL2 (reference 8A to 9C ) in which the recessed portion RP and the light absorbing layer ABF are formed, Fig. 10A and Fig. 10B The insulating layer ISL may correspond to the first sensor insulating layer ISL2 (refer to 8A to 9C ).in addition, Fig. 10A and Fig. 10B The first conductive layer M1, the second conductive layer M2 and the third conductive layer M3 may correspond to the second sensor conductive layer MTL2 (refer to 8A to 9C ) of the first conductive layer M1, the second conductive layer M2 and the third conductive layer M3 (reference 8A to 9C ).

[0218] refer to Fig. 10A , the first conductive layer M1, the second conductive layer M2 and the third conductive layer M3 may be sequentially deposited on the insulating layer ISL to form a conductive layer having a three-layer structure. As an example, the first conductive layer M1, the second conductive layer M2 and the third conductive layer M3 may be formed by a sputtering process.

[0219] The second conductive layer M2 may have a thickness greater than that of each of the first conductive layer M1 and the third conductive layer M3. Since the second conductive layer M2 including a material having a relatively low resistivity has a relatively greater thickness, the first sensing electrode TE1 (reference Figure 6 ) and the second sensing electrode TE2 (reference Figure 6 ) can be relatively low in resistance.

[0220] The first conductive layer M1 and the third conductive layer M3 may include the same material as each other. The second conductive layer M2 may include a material different from that of the first conductive layer M1 and the third conductive layer M3.

[0221] Each of the first conductive layer M1 and the third conductive layer M3 may have a metal material having anti-corrosion properties. The first conductive layer M1 and the third conductive layer M3 may be disposed on the lower surface and the upper surface of the second conductive layer M2, respectively, and may protect the second conductive layer M2 from scratches generated during the process. In addition, the first conductive layer M1 and the third conductive layer M3 may prevent the second conductive layer M2 from being corroded due to moisture penetration. As an example, the first conductive layer M1 and the third conductive layer M3 may include at least one of molybdenum, titanium, and alloys thereof. However, the materials used for the first conductive layer M1 and the third conductive layer M3 should not be limited thereto or thereby.

[0222] The second conductive layer M2 may include a metal material having a low resistivity. As an example, the second conductive layer M2 may include at least one of gold, silver, copper, aluminum, platinum, and alloys thereof, however, the material for the second conductive layer M2 should not be limited thereto or thereby.

[0223] refer to Fig. 10B , the first conductive layer M1, the second conductive layer M2, and the third conductive layer M3 may be patterned by a photoresist and etching process, and a recessed portion RP may be formed in the side surfaces of the first conductive layer M1, the second conductive layer M2, and the third conductive layer M3. Fig. 10B , the photomask and the photoresist are not illustrated.

[0224] As described above, because the second conductive layer M2 includes a material different from those of the first and third conductive layers M1 and M3 , an etch rate of the second conductive layer M2 may be different from those of the first and third conductive layers M1 and M3 .

[0225] The recessed portion RP may be formed in the side surfaces of the first conductive layer M1, the second conductive layer M2, and the third conductive layer M3 using the difference between the etching rate of the second conductive layer M2 and the etching rates of the first conductive layer M1 and the third conductive layer M3. In detail, the recessed portion RP may be formed by overetching the second conductive layer M2 using an etching solution having a higher etching selectivity for the second conductive layer M2 than for the first conductive layer M1 and the third conductive layer M3. According to an embodiment, the recessed portion RP may be formed in the second conductive layer M2 by another process of selectively etching the second conductive layer M2. The process of forming the recessed portion RP should not be particularly limited as long as the side surfaces of the second conductive layer M2 are formed inside the side surfaces of the first conductive layer M1 and the third conductive layer M3.

[0226] refer to Fig. 10C , the light absorbing layer ABF may be deposited by a sputtering process or a chemical vapor deposition (CVD) process to cover the first conductive layer M1 , the second conductive layer M2 , and the third conductive layer M3 .

[0227] In detail, the molybdenum oxide material (for example, molybdenum niobium oxide (MoNbO x ) and molybdenum tantalum oxide (MoTaO x )). The light absorbing layer ABF including amorphous silicon (a-Si) or silicon carbide (SiC) may be deposited by a chemical vapor deposition process. In this case, the light absorbing layer ABF formed by the chemical vapor deposition process may be more conducive to covering the recessed portion RP in the side surfaces of the first conductive layer M1, the second conductive layer M2, and the third conductive layer M3 than the light absorbing layer ABF formed by the sputtering process.

[0228] refer to Fig. 10D , the light absorbing layer ABF may remain only in the recessed portion RP and may be removed from other regions by a dry etching process. Fig. 10D As shown in the arrow direction in FIG. , the anisotropic etching process may be entirely applied to the insulating layer ISL, may not require a separate additional mask, and thus, the manufacturing process efficiency of the display device DD may be improved.

[0229] Fig.10E 1 and 2 show a state in which a recessed portion RP is formed in the side surfaces of the first conductive layer M1, the second conductive layer M2, and the third conductive layer M3 and the light absorbing layer ABF is disposed in the recessed portion RP. 8A to 9C ) or in the side surface of the second sensor conductive layer MTL2 (reference 8A to 9C ) is formed in the side surface of the first electrode of the light emitting element, and a recessed portion RP is formed in the recessed portion RP, so that the external light reflected by the first electrode of the light emitting element is transmitted to the first sensor conductive layer MTL1 (reference 8A to 9C ) or the side surface of the second sensor conductive layer MTL2 (reference 8A to 9C ) may be absorbed by the light absorbing layer ABF disposed in the recessed portion RP. As a result, the light reflected by the first electrode, the first sensor conductive layer MTL1 (reference 8A to 9C ) or the second sensor conductive layer MTL2 (reference 8A to 9C ) The ratio of external light reflected to the upper side of the display device DD can be reduced. That is, the reflectivity of the external light can be reduced, and the visibility of the display panel DP can be improved.

[0230] Fig.11A and Fig. 11B is a graph of reflectivity as a function of wavelength according to an embodiment of the present disclosure. Fig.11A and Fig. 11B is a graph showing the reflectivity of external light of the aluminum substrate according to the thickness of the light absorbing layer.

[0231] By forming molybdenum niobium oxide (MoNbO x ) layer and in molybdenum niobium oxide (MoNbO x ) layer to form silicon nitride (SiN x ) layer and then measure the reflectivity of external light to obtain Fig.11A The reflectivity of Fig.11A As shown in x ) layers are changed to approximately and to measure the reflectance of external light. Thickness of silicon nitride (SiN x The reflectance of external light is measured for light with a wavelength of about 400 nm to about 750 nm.

[0232] refer to Fig.11A , and when there is no molybdenum niobium oxide (MoNbO x )layer Compared with the x ) layer thickness is about When the reflectivity of external light is reduced by about half. or less thickness of molybdenum niobium oxide (MoNbO x ) In the case where the light absorbing layer is provided in the recessed portion defined in the side surface of the sensor conductive layer, the reflectivity of external light is reduced.

[0233] The reflectivity of external light was measured after forming an amorphous silicon (a-Si) layer on an aluminum substrate. Fig. 11B The reflectivity of Fig. 11B As shown in FIG. , by changing the thickness of the amorphous silicon (a-Si) layer to about and The reflectance of external light was measured. The reflectance of external light was measured for light of wavelengths of about 380 nm to about 780 nm. Table 1 below shows the reflectance of external light for light of wavelength of about 550 nm.

[0234] Table 1

[0235]

[0236] refer to Fig. 11B and Table 1, when the thickness of the amorphous silicon (a-Si) layer is about When the reflectivity decreases to the thickness of the amorphous silicon (a-Si) layer The reflectivity is about 10%. In the case where an amorphous silicon (a-Si) light absorbing layer having a thickness of 100 Å or less is provided in the recessed portion defined in the side surface of the sensor conductive layer, the reflectivity of external light is sufficiently reduced.

[0237] refer to Fig.11A and Fig. 11B , when molybdenum niobium oxide (MoNbO x ) is applied to the light absorbing layer, when amorphous silicon (a-Si) is applied to the light absorbing layer, a reduction in reflectivity of external light is achieved using a thinner light absorbing layer.

[0238] At the same time, since the light absorbing layer is formed in the concave portion defined in the side surface of the sensor conductive layer, when the light absorbing layer having amorphous silicon (a-Si) is formed by a chemical vapor deposition process, the property of covering the concave portion is better than that of forming the light absorbing layer having molybdenum niobium oxide (MoNbO) by a sputtering process. x ) is excellent when it is a light absorbing layer.

[0239] Although the embodiments of the present disclosure have been described, it should be understood that the present disclosure should not be limited to these embodiments, but various changes and modifications may be made by one of ordinary skill in the art within the spirit and scope of the present disclosure as hereinafter claimed.

[0240] Therefore, the disclosed subject matter should not be limited to any single embodiment described herein, and the scope of the inventive concept should be determined based on the following claims.

Claims

1. A display device, characterized in that The display device comprises: A display panel including a light emitting area and a non-light emitting area adjacent to the light emitting area; and An input sensor is provided on the display panel, wherein the input sensor comprises: a first sensor conductive layer disposed on the display panel; a first sensor insulating layer disposed on the first sensor conductive layer; and a second sensor conductive layer disposed on the first sensor insulating layer, wherein at least one of the first sensor conductive layer and the second sensor conductive layer is provided with a grid of openings defined therethrough, At least one of a side surface of the first sensor conductive layer and a side surface of the second sensor conductive layer is provided with a recessed portion defined therein, and The input sensor further includes a light absorbing layer disposed in the recessed portion.

2. The display device according to claim 1, Its characteristics are The second sensor conductive layer includes a first conductive layer disposed on the first sensor insulating layer, a second conductive layer disposed on the first conductive layer, and a third conductive layer disposed on the second conductive layer. The side surface of the first conductive layer and the side surface of the third conductive layer protrude outward more than the side surface of the second conductive layer to define the recessed portion, and The side surface of the second conductive layer is covered by the light absorbing layer.

3. The display device according to claim 2, Its characteristics are The input sensor further includes a second sensor insulating layer disposed on the second sensor conductive layer, and The second sensor insulating layer contacts the side surface of the first conductive layer, the side surface of the third conductive layer, and an upper surface of the third conductive layer, and does not contact the side surface of the second conductive layer.

4. The display device according to claim 2, Its characteristics are The first conductive layer and the third conductive layer include the same material as each other.

5. The display device according to claim 2, Its characteristics are The first conductive layer and the third conductive layer include titanium, and The second conductive layer includes aluminum or copper.

6. The display device according to claim 1, Its characteristics are The first sensor conductive layer includes a first conductive layer disposed on the display panel, a second conductive layer disposed on the first conductive layer, and a third conductive layer disposed on the second conductive layer. The side surface of the first conductive layer and the side surface of the third conductive layer protrude outward more than the side surface of the second conductive layer to form the concave portion, and The side surface of the second conductive layer is covered by the light absorbing layer.

7. The display device according to claim 1, characterized in that The light absorbing layer includes molybdenum niobium oxide or molybdenum tantalum oxide.

8. The display device according to claim 7, characterized in that The light absorbing layer has a thickness of 400 angstroms to 1000 angstroms.

9. The display device according to claim 1, characterized in that The light absorbing layer includes amorphous silicon or silicon carbide.

10. The display device according to claim 9, characterized in that The light absorbing layer has a thickness of 40 angstroms to 1000 angstroms.

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