Movable annealing device

Abstract

According to the movable annealing device provided by the utility model, the cavity, the tray, the heating assembly and the lifting assembly are arranged, so that the cavity has different temperature areas from bottom to top under the action of the heating assembly, and the distance between the tray and a high-temperature heat source is changed under the action of the lifting assembly; under the combined action of the components, the processing controller, the position feedback device, the tray temperature sensor and the like, the rapid thermal annealing function of the wafer is realized; the problems of short service life and high maintenance cost caused by short-time rapid heating and cooling of a heating part of existing equipment are solved, the risk of wafer jumping caused by rapid up-and-down movement of the tray is reduced, and meanwhile, the problem of uneven wafer edge temperature caused by side wall temperature change in the existing equipment is solved.

Description

Technical Field

[0001] The utility model belongs to the technical field of annealing furnace heating and relates to a mobile annealing device. Background Art

[0002] In semiconductor technology, commonly used rapid thermal processing (RTP) annealing processes include soak annealing and spike annealing. Soak annealing is characterized by keeping the temperature at a certain temperature for a period of time. It can simultaneously activate doping elements and repair defects. Spike annealing has a very short residence time at high temperature and is mainly used for the diffusion of doping elements and obtaining a shallower junction depth. The spike annealing process usually requires the wafer to be rapidly heated from ambient temperature or preheating temperature to about 900-1200°C. After the wafer is kept at this temperature for a few seconds, it is quickly cooled down to complete the annealing in order to obtain good process performance.

[0003] At present, the principle of existing semiconductor annealing equipment is to use heat sources such as infrared bulbs or lamps to make the wafer absorb electromagnetic radiation to achieve temperature increase, and control the temperature and heating time of the wafer by adjusting the switch and the power of the thermal radiation light source, and then quickly cool down by turning off the light source and blowing away the heat with cold air. However, this annealing method has high requirements for heating components in the equipment, such as heating bulbs or lamps, because it requires rapid heating and cooling. The heating components in the annealing chamber need to be quickly heated in the annealing chamber and need to be rapidly cooled down in a short period of time (about 75 to 150°C / sec heating and cooling), which will shorten the service life of the heating components. At the same time, the high frequency of replacement and maintenance of the heating components will increase the maintenance cost.

[0004] Therefore, it is necessary to provide a mobile annealing device.

[0005] It should be noted that the above introduction to the technical background is only for the convenience of providing a clear and complete description of the technical solutions of the present application and for the convenience of understanding by those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art simply because they are described in the background technology section of the present application. Utility Model Content

[0006] In view of the above-mentioned shortcomings of the prior art, the purpose of the utility model is to provide a mobile annealing device to solve the problems of short life and high maintenance cost of heating components of the existing annealing equipment.

[0007] In order to achieve the above object, the utility model provides a mobile annealing device, which comprises:

[0008] Cavity;

[0009] A tray, the tray being disposed in the cavity;

[0010] A heating component, wherein the heating component comprises a top heating component disposed on the top of the cavity and a side wall heating component disposed on the side wall of the cavity, and the cavity is provided with different temperature zones from bottom to top through the heating components;

[0011] A lifting component is connected to the cavity to drive the cavity to move up and down so as to change the distance between the tray and the heating component.

[0012] Optionally, the top heating assembly comprises a top zone regulator and a top zone temperature sensor, and the top zone regulator communicates with the top zone temperature sensor.

[0013] Optionally, the top heating element of the top heating assembly includes one or a combination of a honeycomb bulb, a ring-shaped resistance wire, a round bulb, a strip light tube and a graphene heating plate.

[0014] Optionally, the lifting assembly includes a cylinder-adjustable lifting assembly or a thread-adjustable lifting assembly.

[0015] Optionally, the side wall heating assembly includes a side wall zone regulator and a side wall zone temperature sensor, and the side wall zone regulator communicates with the side wall zone temperature sensor.

[0016] Optionally, the side wall heating element in the side wall heating assembly includes a surrounding light bulb, a light tube or a graphene heating plate.

[0017] Optionally, the tray comprises a rotating tray.

[0018] Optionally, a tray temperature sensor is provided on the tray.

[0019] Optionally, the tray temperature sensor is connected to the tray via an optical fiber.

[0020] Optionally, the lifting assembly includes a process controller, a motor controller and a position feedback device that communicate with each other, and the process controller communicates with the tray temperature sensor; the process controller communicates with the motor controller; and the motor controller communicates with the position feedback device.

[0021] The utility model provides a mobile annealing device, whose working principle is: different temperature zones are maintained in a chamber by arranging a heating component; when the wafer on the surface of a tray needs to be heated up quickly, the chamber is rapidly lowered by a lifting component to bring the heat source to the periphery of the wafer; when the wafer completes rapid heating, the chamber is rapidly moved upward by the lifting component to keep the high-temperature heat source away from the wafer surface, thereby achieving rapid cooling and completing the process of rapid thermal annealing of the wafer.

[0022] The beneficial effects of the utility model are:

[0023] By setting up a cavity, a tray, a heating component and a lifting component, the cavity can achieve the effect of having different temperature zones from bottom to top under the action of the heating component, and the effect of changing the distance between the tray and the high-temperature heat source can be achieved under the action of the lifting component; the above components, together with the processing controller, the position feedback device, the tray temperature sensor and other settings, realize the function of rapid thermal annealing of the wafer; the problem of short life and high maintenance cost of heating components of existing equipment caused by rapid heating and cooling in a short time is solved, the risk of wafer jumping caused by rapid up and down movement of the tray is reduced, and at the same time, the problem of uneven temperature of the wafer edge caused by side wall temperature changes in existing equipment is overcome. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 Shown is a schematic structural diagram of the mobile annealing device provided by the utility model.

[0025] Figure 2 It shows a structural schematic diagram of the annealing device of the utility model for heating the top component.

[0026] Figure 3 Shown are four other structural schematic diagrams of the top assembly of the annealing device of the present invention.

[0027] Component number description

[0028] 101 Cavity

[0029] 102 Pallets

[0030] 103 Heating element

[0031] 104 Top heating assembly

[0032] 105 Side wall heating assembly

[0033] 106 Sidewall

[0034] 107 Lifting Components

[0035] 108 Support base

[0036] 109 Rotation axis

[0037] 110 Position feedback device

[0038] 111 Top partition regulator

[0039] 112 Motor Controller

[0040] 113 Processing Controller

[0041] 114 Tray temperature sensor

[0042] 115 Sidewall partition regulator

[0043] 116 Side wall zone temperature sensor

[0044] 117 Side wall heating element

[0045] 118 Fiber Optic

[0046] 119 Wafer

[0047] 120 Top zone temperature sensor

[0048] 121 Top heating element

[0049] 122 Ring resistance wire

[0050] 123 round light bulb

[0051] 124 Strip Light

[0052] 125 Graphene Heating Plate DETAILED DESCRIPTION

[0053] The following is an explanation of the implementation of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific implementations, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0054] It should be noted that the illustrations provided in this embodiment are only used to schematically illustrate the basic concept of the present invention. Therefore, the drawings only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0055] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0056] See also Figure 1 The present embodiment provides a mobile annealing device, which includes a cavity 101, a tray 102, a heating component 103 and a lifting component 107, wherein the tray 102 is arranged in the cavity 101; the heating component 103 includes a top heating component 104 arranged on the top of the cavity 101 and a side wall heating component 105 arranged on the side wall 106 of the cavity 101, and the cavity 101 has different temperature zones from bottom to top through the heating component 103; the lifting component 107 is connected to the cavity 101 to drive the cavity 101 to move up and down to change the distance between the tray 102 and the heating component 103.

[0057] The movable annealing device in this embodiment can make the chamber 101 have different temperature zones from bottom to top through the heating component 103, and can drive the chamber 101 to operate under the action of the lifting component 107, so as to change the distance between the tray 102 and the heating component 103, that is, the movable annealing device in this embodiment can quickly adjust the distance between the wafer 119 and the heat source according to the temperature state required by the wafer 119 on the tray 102 located in the chamber 101, meet the temperature requirements of the surface of the wafer 119, so as to realize the process of rapid thermal annealing treatment, solve the problem of short life and high maintenance cost caused by the rapid heating and cooling of the heating components of the equipment in a short time, reduce the risk of the wafer 119 jumping due to the rapid up and down movement of the tray 102, and also overcome the problem of uneven temperature at the edge of the wafer 119 due to the temperature change of the side wall 106 in the existing equipment. As an example, the tray 102 includes a rotating tray.

[0058] In this embodiment, in order to make the surface of the wafer 119 heated more evenly, the tray 102 is a rotating tray. During the heating process of the wafer 119, the tray 102 can achieve temperature uniformity on the surface of the wafer 119 by rotating the rotating shaft 109. However, the selection of the specific type of the tray 102 is not limited thereto. For example, in some other embodiments, the tray 102 can also be a fixed tray as needed.

[0059] Furthermore, a tray temperature sensor 114 may be provided on the tray 102 so that the tray temperature sensor 114 can obtain the actual temperature of the tray 102 to facilitate temperature control. The tray temperature sensor 114 may include a temperature sensor such as an optical pyrometer. An optical pyrometer is used in this embodiment.

[0060] The tray temperature sensor 114 may be connected to the tray 102 via an optical fiber 118 , but is not limited thereto.

[0061] As an example, the top heating assembly 104 may include a top zone regulator 111 and a top zone temperature sensor 120 , and the top zone regulator 111 communicates with the top zone temperature sensor 120 .

[0062] Specifically, the movable annealing device in this embodiment can provide the cavity 101 with different temperature zones from bottom to top, thereby forming a stable and continuous temperature thermal field, by means of the top heating component 104 disposed on the top of the cavity 101 and the side wall heating component 105 disposed on the side wall 106 of the cavity 101.

[0063] In order to provide a good and stable heat source for the top heating component 104, in this embodiment, the top heating component 104 includes the top partition regulator 111 and the top partition temperature sensor 120, and the top partition temperature sensor 120 is set corresponding to and communicates with the top partition regulator 111, so that the temperature of each area of ​​the top heat source can be known through the top partition temperature sensor 120, and the top partition regulator 111 can be used to perform partition adjustment to meet temperature requirements and realize the diversification and convenience of temperature control.

[0064] Among them, see Figure 2 and Figure 3 The top heating element 121 of the top heating assembly 104 may include one or a combination of a honeycomb bulb, a ring-shaped resistance wire 122, a round bulb 123, a strip light tube 124, and a graphene heating plate 125. In this embodiment, the top heating element 121 preferably uses a more commonly used honeycomb bulb.

[0065] As an example, the sidewall heating assembly 105 may include a sidewall zone regulator 115 and a sidewall zone temperature sensor 116 , and the sidewall zone regulator 115 communicates with the sidewall zone temperature sensor 116 .

[0066] Specifically, in order to provide the side wall heating component 105 with a good and stable heat source, in this embodiment, the side wall heating component 105 includes the side wall partition regulator 115 and the side wall partition temperature sensor 116, and the side wall partition regulator 115 and the side wall partition temperature sensor 116 are set correspondingly and communicate with each other, so that the temperature of each area of ​​the side wall heat source can be obtained through the side wall partition temperature sensor 116, and the side wall partition regulator 115 can be used to perform partition adjustment to meet temperature requirements and realize the diversification and convenience of temperature control.

[0067] The side wall heating element 117 in the side wall heating assembly 105 may include a bulb, a lamp tube or a graphene heating plate surrounding it.

[0068] As an example, the lifting assembly 107 may include a cylinder-adjustable lifting assembly or a thread-adjustable lifting assembly.

[0069] Specifically, in order to achieve rapid heating and cooling of the surface of the wafer 119 and reduce the risk of wafer jumping due to movement of the wafer 119, the lifting component 107 is connected to the cavity 101 and the support base 108, and the lifting component 107 is used to drive the cavity 101 to move up and down to change the distance between the tray 102 and the heating component 103.

[0070] In this embodiment, the lifting assembly 107 is preferably a cylinder-type lifting assembly that is more commonly used and easy to operate, but the type of the lifting assembly 107 is not limited thereto.

[0071] As an example, in order to better achieve temperature regulation of the wafer 119, the lifting assembly 107 may include a process controller 113, a motor controller 112 and a position feedback device 110 that communicate with each other, and the process controller 113 communicates with the tray temperature sensor 114; the process controller 113 communicates with the motor controller 112; the motor controller 112 communicates with the position feedback device 110.

[0072] Specifically, the position of the cavity 101 can be fed back to the motor controller 112 through the position feedback device 110, and then transmitted to the processing controller 113; the temperature of the wafer 119 on the surface of the tray 102 is transmitted to the tray temperature sensor 114 through the optical fiber 118, and then the signal is transmitted to the processing controller 113. The processing controller 113 processes according to the process temperature parameters stored in the heating component 103, the temperature information of the surface of the tray 102 and the position information of the cavity 101, calculates the distance moved by the cavity 101, and then gives the processing information to the motor controller 112. The motor controller 112 quickly adjusts the position information of the cavity 101 to achieve the temperature required for rapid thermal annealing of the wafer 119.

[0073] In this embodiment, the top partition regulator 111 and the side wall partition regulator 115 set relevant process temperature parameters so that the temperature inside the cavity 101 changes from 500°C to 1100°C from bottom to top. When the temperature of the wafer 119 needs to rise rapidly, the wafer 119 needs to be preheated to the corresponding temperature of 500°C first. The preheating process is no longer described here. You can choose to fill it into the cavity 101, or you can choose to preheat it to 500°C before entering the cavity 101. After that, the processing controller 113 controls the cavity 101 to descend rapidly through processing information, and quickly moves the high-temperature heat source close to the wafer 119 to make its temperature reach 1100°C. After a few seconds, the processing controller 113 controls the cavity 101 to rise rapidly through processing information, and quickly moves the high-temperature heat source away from the wafer 119 to make the ambient temperature of the wafer 119 reach 500°C, thereby realizing rapid thermal annealing of the wafer 119.

[0074] In this example, the top heating component 104 preferably adopts a honeycomb-shaped bulb, and the temperature change is achieved by considering the change in the distance between the heating element 103 and the wafer 119. The specific principle is as follows:

[0075] According to the basic law of thermal radiation, the relationship between the change of wafer temperature (T) over time (t) and the absorption and emissivity of electromagnetic wave thermal radiation can be expressed as follows:

[0076]

[0077] Where ρ, c, and d are the mass density, heat capacity, and thickness of the wafer material, respectively; ηP(t) is the thermal radiation power density absorbed by the wafer, where P(t) is the incident light source radiation power density, and η is the effective power coupling parameter; H eff σΤ 4 is the heat radiation power density H lost by the silicon wafer eff is the wafer thermal radiation power loss parameter. P, η and Heff It is related to the thermal radiation source, structure and wafer, etc. Its value changes with temperature and affects the temperature stability of the wafer. Preheating by heating components forms a stable thermal field and heat treats the wafer. Under steady-state conditions, the thermal radiation absorption and emission of the wafer reach a balance, that is:

[0078] ηP(t)=H eff σT 4

[0079] This formula is a simplified equation that describes the wafer temperature, power density and thermal radiation parameters in the cavity, completely ignoring the effects of heat conduction and convection. According to the first law of illumination: when illuminated by a point light source, the illumination on the surface of an object perpendicular to the light is proportional to the luminous intensity of the light source and inversely proportional to the square of the distance from the illuminated surface to the light source, that is:

[0080] E=I / R 2

[0081] In the formula, E is the illumination, R is the distance from the object to the light source, and I is the luminous intensity of the light source. As the heating distance increases, the heating temperature of the heated material will decrease. Combined with the law of thermal radiation, the radiation power density of the incident light source can be calculated.

[0082] In this embodiment, countless point heat sources in different zones are used to form a heat radiator, and their infrared rays interfere with each other, forming a stable and continuous thermal field at the interface of the temperature zone from bottom to top. At the same time, since the wafer 119 and the tray 102 occupy a considerable area of ​​the cavity 101, the wafer 119 and the tray 102 block the heat transfer of the upper high-temperature heat source, reduce heat convection, and since the side wall 106 is provided with the side wall partition regulator 115, the temperature stability of the cavity 101 is ensured. Therefore, thermal annealing with different temperature requirements can be achieved by changing the distance between the heat source and the wafer 119.

[0083] In summary, the utility model provides a cavity, a tray, a heating component and a lifting component, so that the cavity can achieve the effect of having different temperature zones from bottom to top under the action of the heating component, and the effect of changing the distance between the tray and the high-temperature heat source under the action of the lifting component; the above components, together with the processing controller, the position feedback device, the tray temperature sensor and other settings, realize the function of rapid thermal annealing of the wafer; solves the problem of short life and high maintenance cost of the heating components of the existing equipment due to rapid heating and cooling in a short time, and also reduces the risk of wafer skipping caused by the need to move the wafer up and down quickly. At the same time, it also overcomes the problem of uneven edge temperature of the wafer caused by the change of the side wall temperature in the existing equipment. The utility model effectively overcomes the various shortcomings of the prior art and has a high industrial utilization value.

[0084] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the technology may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed in the present invention shall still be covered by the claims of the present invention.

Claims

1. A mobile annealing device, characterized in that: The movable annealing device comprises: Cavity; A tray, the tray being disposed in the cavity; A heating component, wherein the heating component comprises a top heating component disposed on the top of the cavity and a side wall heating component disposed on the side wall of the cavity, and the cavity has different temperature zones from bottom to top through the heating components; A lifting component is connected to the cavity to drive the cavity to move up and down so as to change the distance between the tray and the heating component.

2. The mobile annealing device according to claim 1, characterized in that: The top heating assembly includes a top zone regulator and a top zone temperature sensor, and the top zone regulator communicates with the top zone temperature sensor.

3. The mobile annealing device according to claim 1, characterized in that: The top heating element of the top heating assembly includes one or a combination of a honeycomb bulb, a ring-shaped resistance wire, a round bulb, a strip light tube and a graphene heating plate.

4. The mobile annealing device according to claim 1, characterized in that: The lifting assembly includes a cylinder-adjustable lifting assembly or a thread-adjustable lifting assembly.

5. The mobile annealing device according to claim 1, characterized in that: The side wall heating assembly includes a side wall zone regulator and a side wall zone temperature sensor, and the side wall zone regulator communicates with the side wall zone temperature sensor.

6. The mobile annealing device according to claim 1, characterized in that: The side wall heating element in the side wall heating assembly includes a bulb, a lamp tube or a graphene heating plate surrounding the side wall.

7. The mobile annealing device according to claim 1, characterized in that: The tray comprises a rotating tray.

8. The mobile annealing device according to claim 1, characterized in that: The tray is provided with a tray temperature sensor.

9. The mobile annealing device according to claim 8, characterized in that: The tray temperature sensor is connected to the tray via an optical fiber.

10. The mobile annealing device according to claim 8, characterized in that: The lifting assembly includes a process controller, a motor controller and a position feedback device that communicate with each other, and the process controller communicates with the tray temperature sensor; the process controller communicates with the motor controller; and the motor controller communicates with the position feedback device.

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