Detection device for vapor deposition equipment

Abstract

The utility model provides a detection device for vapor deposition equipment. The detection device comprises a laser transmitter, a laser receiver and a processing unit, the laser transmitter and the laser receiver are arranged on the two symmetrical side walls of the cover body respectively, and the monitoring area of the dome cover is located between the laser transmitter and the laser receiver, so that laser transmitted by the laser transmitter penetrates through the monitoring area; the laser receiver is connected with the processing unit, the laser receiver is used for receiving the laser and sending laser transmission amount information to the processing unit, and the processing unit is used for obtaining the thickness of the by-product in the monitoring area according to the laser transmission amount information. According to the utility model, by monitoring the thickness of the by-product covered on the dome cover, the dome cover can be cleaned in time or the by-product covered on the dome cover can be etched and removed in time, so that the by-product accumulated on the dome cover is prevented from falling on the surface of the wafer to influence the quality of the wafer and the temperature of the deposition reaction chamber, the service life of the dome cover is prolonged, and the service life of the dome cover is prolonged. The input cost is reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, in particular to a detection device for vapor deposition equipment. Background Art

[0002] With the development of higher process technology, the epitaxy (Epi) process has entered the 28nm and below process nodes. The use of low-pressure chemical vapor deposition (RPCVD) equipment can promote the doping of boron and phosphorus, thereby increasing the electron-hole pairs, and then meet the performance requirements by increasing the carrier migration rate. The single crystal substrate wafer uses Si source and Ge source as growth gas in the epitaxial growth chamber to deposit the precursor and etch HCl, thereby generating a selective epitaxial layer (SEG) that meets specific requirements such as resistance and surface quality.

[0003] Low-pressure chemical vapor deposition (RPCVD) equipment will inevitably produce process byproducts composed of elements such as Si, Cl and H during the epitaxial growth process. The byproducts in the deposition reaction chamber of general chemical vapor deposition equipment are in the form of a mesh coating with uneven thickness. The byproducts are mainly distributed in the upper lining and dome cover near the outlet of the suction pump and the outlet of the supplementary pipeline of the main gas path. The suction pump and the supplementary pipeline are the channels for extracting unreacted gas from the deposition reaction chamber. Due to the fast gas flow rate and large temperature range changes, the accumulation of byproducts in the above-mentioned areas is the most serious. In particular, the byproducts existing in the dome cover above the outlet of the supplementary pipeline and the outlet of the suction pump have large temperature changes. The long-term accumulated byproducts will fall on the surface of the wafer, resulting in large particles on the wafer, which will affect the quality of the wafer. In addition, the thickness of the byproducts on the dome cover will affect the upper limit temperature, which will affect the temperature of the deposition reaction chamber.

[0004] At present, facing the above problems of dome covers, suppliers limit the number of wafers produced. After the chemical vapor deposition equipment produces wafers that reach the number of specifications, they return the dome covers to the factory for cleaning to solve the problem of the byproducts covering them. However, this method will also send dome covers whose accumulated byproducts have not reached the level of deterioration for cleaning, which will reduce the quality of the dome covers and greatly increase the cost. Utility Model Content

[0005] The purpose of the utility model is to provide a detection device for vapor deposition equipment, which can monitor the thickness of the by-products covered by the dome cover so that the dome cover can be cleaned or etched to remove the by-products covered by the dome cover in time, thereby avoiding the by-products accumulated on the dome cover from falling on the wafer surface and affecting the wafer quality and the temperature of the deposition reaction chamber, and is conducive to extending the service life of the dome cover and reducing investment costs.

[0006] In a first aspect, the utility model provides a detection device for a vapor deposition device, which adopts the following technical solution: the vapor deposition device includes a cover body, and a supporting platform and a dome cover arranged in a receiving cavity of the cover body, and the dome cover and the supporting platform are arranged to form a deposition reaction chamber; the detection device includes a laser transmitter, a laser receiver and a processing unit; the laser transmitter and the laser receiver are respectively arranged on two symmetrical side walls of the cover body, and the monitoring area of ​​the dome cover is located between the laser transmitter and the laser receiver, so that the laser emitted by the laser transmitter passes through the monitoring area; the laser receiver is connected to the processing unit, the laser receiver is used to receive the laser and send laser transmittance information to the processing unit, and the processing unit is used to obtain the by-product thickness of the monitoring area according to the laser transmittance information.

[0007] The beneficial effects of the above technical solution are: the laser emitter and the laser receiver are respectively arranged on two symmetrical side walls of the cover body, and the monitoring area of ​​the dome cover is located between the laser emitter and the laser receiver, so that the laser emitted by the laser emitter passes through the monitoring area; the laser receiver is connected to the processing unit, the laser receiver is used to receive the laser and send laser transmission information to the processing unit, and the processing unit is used to obtain the byproduct thickness of the monitoring area according to the laser transmission information. That is, the utility model provides a quantitative method for measuring the thickness of the byproduct on the dome cover. The indicator of the covered by-products makes it possible to monitor the by-product thickness in the monitoring area of ​​the dome cover in real time, and can effectively ensure that when the by-products covered on the dome cover accumulate to a certain thickness, the dome cover can be cleaned or etched away in time, that is, accurate guidance is provided for cleaning the dome cover or etching away the by-products covered on the dome cover, and it is avoided that the by-products accumulated on the dome cover fall on the wafer surface and affect the wafer quality and the temperature of the deposition reaction chamber, and it also avoids sending the dome cover whose accumulated by-products have not reached the deterioration level for cleaning, which is beneficial to prolonging the service life of the dome cover and reducing the investment cost.

[0008] In the second aspect, the utility model provides a detection device for vapor deposition equipment, adopting the following technical solution: the vapor deposition equipment includes a cover body, and a supporting platform and a dome cover arranged in the receiving cavity of the cover body, and the dome cover and the supporting platform are surrounded by a deposition reaction chamber; the detection device includes a laser transmitter, a laser receiver and a processing unit, and the laser receiver is connected to the processing unit; the laser transmitter is used to emit detection light to the monitoring area of ​​the dome cover, and the laser receiver is used to receive the detection light emitted by the dome cover, and send the received light information to the processing unit; the processing unit is used to obtain the by-product thickness of the monitoring area according to the received light information.

[0009] The beneficial effects of the above technical solution are: the detection device includes a laser transmitter, a laser receiver and a processing unit, and the laser receiver is connected to the processing unit; the laser transmitter is used to emit detection light to the monitoring area of ​​the dome cover, and the laser receiver is used to receive the detection light emitted by the dome cover and send the received light information to the processing unit; the processing unit is used to obtain the by-product thickness of the monitoring area according to the received light information, that is, the utility model provides an indicator for quantifying the by-products covered on the dome cover, so that The thickness of by-products in the monitoring area of ​​the dome cover can be monitored in real time, and it can be effectively ensured that when the by-products covered on the dome cover accumulate to a certain thickness, the dome cover can be cleaned or etched away in time, that is, accurate guidance is provided for cleaning the dome cover or etching away the by-products covered on the dome cover, and the by-products accumulated on the dome cover are avoided from falling on the wafer surface and affecting the wafer quality and the temperature of the deposition reaction chamber. At the same time, it also avoids sending the dome cover whose accumulated by-products have not reached the deterioration level for cleaning, which is beneficial to extending the service life of the dome cover and reducing the investment cost.

[0010] Preferably, the vapor deposition equipment further comprises a suction pump and a supplementary pipeline of the main gas circuit, the gas outlet of the suction pump is communicated with the deposition reaction chamber, the gas outlet of the supplementary pipeline is communicated with the deposition reaction chamber, and the monitoring area comprises an area of ​​the dome cover close to the gas outlet of the suction pump and / or an area close to the gas outlet of the supplementary pipeline. Its beneficial effect is that the area of ​​the dome cover close to the gas outlet of the suction pump and / or the area close to the gas outlet of the supplementary pipeline is an area that is easily covered with accumulated by-products, and by monitoring the above-mentioned area, i.e., the thickness of the by-products covered with the most on the dome cover, it is ensured that the dome cover can be cleaned in time or the by-products covered on the dome cover can be etched away to avoid the by-products accumulated on the dome cover falling on the wafer surface and affecting the wafer quality and the temperature of the deposition reaction chamber.

[0011] Preferably, the vapor deposition equipment further includes a suction pump and a supplementary pipeline for the main gas circuit, and the suction pump is arranged near the first side wall of the cover body, and the supplementary pipeline for the main gas circuit is arranged near the second side wall of the cover body; the laser emitter is arranged on the first side wall and / or the second side wall. Its beneficial effect is that the laser emitted by the laser emitter passes through the monitoring area where the dome cover is prone to be covered with accumulated by-products, so as to ensure that the thickness of the by-products covered with the most on the dome cover can be accurately monitored, thereby ensuring that the dome cover can be cleaned or etched to remove the by-products covered on the dome cover in time, and avoiding the by-products accumulated on the dome cover from falling on the wafer surface and affecting the wafer quality and the temperature of the deposition reaction chamber.

[0012] Preferably, the laser emitter comprises at least one of a linear scanning laser sensor and a face scanning laser sensor. The beneficial effect thereof is that the thickness of the byproduct in the monitoring area can be accurately monitored in real time.

[0013] Preferably, the detection device further comprises an alarm unit, the alarm unit is connected to the processing unit, and the processing unit is used to control the alarm unit to sound an alarm when the thickness of the byproduct in the monitoring area is greater than or equal to a preset thickness. The beneficial effect is that after monitoring that the thickness of the byproduct is greater than or equal to a preset thickness, the alarm unit sounds an alarm to remind the staff to clean the dome cover or etch away the byproducts covered on the dome cover in time, so as to prevent the byproducts accumulated on the dome cover from falling on the wafer surface and affecting the wafer quality and the temperature of the deposition reaction chamber.

[0014] Preferably, the preset thickness is 10nm-100μm. The beneficial effect is that the dome cover can be cleaned or the byproducts covered on the dome cover can be removed by etching in time, so as to prevent the byproducts accumulated on the dome cover from falling on the wafer surface and affecting the wafer quality and the temperature of the deposition reaction chamber.

[0015] Preferably, there are a plurality of laser emitters, and the plurality of laser emitters are arranged to diverge from the air outlet of the suction pump as the center in a direction away from the air outlet of the suction pump, and / or the plurality of laser emitters are arranged to diverge from the air outlet of the supplementary pipeline as the center in a direction away from the air outlet of the supplementary pipeline. The beneficial effect is that the area of ​​the dome cover close to the air outlet of the suction pump and / or the area close to the air outlet of the supplementary pipeline is an area that is easily covered with accumulated by-products, and by monitoring the thickness of the by-products in the above-mentioned areas, it is ensured that the dome cover can be cleaned in time or the by-products covered on the dome cover can be etched away to prevent the by-products accumulated on the dome cover from falling on the wafer surface and affecting the wafer quality and the temperature of the deposition reaction chamber.

[0016] Preferably, the detection device further comprises a storage unit, the storage unit is connected to the processing unit, the processing unit is used to send the byproduct thickness of the monitoring area to the storage unit for storage, and the laser transmitter and the laser receiver are both detachably arranged on the cover body. The beneficial effect is that the number of the laser transmitter and the laser receiver can be adjusted according to the historical data stored in the storage unit, and the positions of the laser transmitter and the laser receiver on the cover body can be adjusted.

[0017] Preferably, the detection device further comprises a display unit, the display unit is connected to the processing unit, the processing unit is used to send the byproduct thickness of the monitoring area to the display unit, and the display unit is used to display the byproduct thickness of the monitoring area. Its beneficial effect is that the staff can check the byproduct thickness of the monitoring area at any time to ensure that the dome cover can be cleaned or etched to remove the byproducts covered by the dome cover in time, and avoid the byproducts accumulated on the dome cover falling on the wafer surface and affecting the wafer quality and the temperature of the deposition reaction chamber.

[0018] Preferably, the detection device further comprises a storage unit, the storage unit is used to store the laser transmittance comparison information of the normal dome cover, the storage unit is connected to the processing unit, and the processing unit is used to calculate the laser attenuation according to the laser transmittance information and the laser transmittance comparison information, so as to obtain the byproduct thickness of the monitoring area. The beneficial effect is that the byproduct thickness of the monitoring area can be accurately obtained. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is a schematic diagram of the assembly of the detection device and the vapor deposition equipment of the embodiment of the utility model;

[0020] Figure 2 for Figure 1 A schematic diagram of the assembly of a vapor deposition apparatus is shown;

[0021] Figure 3 for Figure 1 The structural block diagram of the detection device shown. DETAILED DESCRIPTION

[0022] In order to make the purpose, technical scheme and advantages of the embodiments of the utility model clearer, the technical scheme in the embodiments of the utility model will be clearly and completely described below. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the utility model. Unless otherwise defined, the technical terms or scientific terms used herein should be understood by people with general skills in the field to which the utility model belongs. "Including" and similar words used in this article mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0023] In order to overcome the problems existing in the prior art, the embodiments of the utility model provide a method for monitoring the thickness of the by-products covered by the dome cover so that the dome cover can be cleaned or etched to remove the by-products covered by the dome cover in time, thereby preventing the by-products accumulated on the dome cover from falling on the wafer surface and affecting the wafer quality and the temperature of the deposition reaction chamber, and is beneficial to extending the service life of the dome cover and reducing investment costs.

[0024] Figure 1 It is a schematic diagram of the assembly of the detection device and the vapor deposition equipment of the embodiment of the utility model; Figure 2 for Figure 1 A schematic diagram of the assembly of a vapor deposition apparatus is shown; Figure 3 for Figure 1 The structural block diagram of the detection device shown.

[0025] In the first embodiment of the utility model, reference Figures 1 to 3 The vapor deposition equipment includes a cover body 110, and a carrier platform 120 and a dome cover 130 arranged in the receiving cavity of the cover body 110, and the dome cover 130 and the carrier platform 120 are surrounded to form a deposition reaction chamber 140; the detection device 200 includes a laser emitter 210, a laser receiver 220 and a processing unit 230; the laser emitter 210 and the laser receiver 220 are respectively arranged on two symmetrical side walls of the cover body 110, and the monitoring area 131 of the dome cover 130 is located between the laser emitter 210 and the laser receiver 220, so that the laser 240 emitted by the laser emitter 210 passes through the monitoring area 131; the laser receiver 220 is connected to the processing unit 230, and the laser receiver 220 is used to receive the laser 240 and send laser transmittance information to the processing unit 230, and the processing unit 230 is used to obtain the by-product thickness of the monitoring area 131 according to the laser transmittance information.

[0026] The first embodiment uses the principle that the laser energy is high and the path is a straight line. When the laser encounters an obstacle during propagation, the laser intensity will be weakened. Specifically, the calculation formula of the byproduct thickness is:

[0027] D=e a

[0028] Where D is the byproduct thickness and a is the attenuation coefficient.

[0029] The calculation formula of the attenuation coefficient is:

[0030]

[0031] Among them, P o is the power value of the laser emitted by the laser transmitter, Pi is the power value of the laser received by the laser receiver, and a is the attenuation coefficient.

[0032] In a second embodiment of the utility model, the vapor deposition equipment includes a cover body, and a supporting platform and a dome cover arranged in the receiving cavity of the cover body, and the dome cover and the supporting platform are surrounded by a deposition reaction chamber; the detection device includes a laser transmitter, a laser receiver and a processing unit, and the laser receiver is connected to the processing unit; the laser transmitter is used to emit detection light to the monitoring area of ​​the dome cover, and the laser receiver is used to receive the detection light emitted by the dome cover and send the received light information to the processing unit; the processing unit is used to obtain the by-product thickness of the monitoring area according to the received light information.

[0033] The second embodiment utilizes the following two principles: Principle 1: When there are sediments, i.e., by-products, in the monitoring area of ​​the dome cover, the reflectivity of light will increase, and the thickness of the by-products can be obtained by detecting the reflectivity of light reflected by the dome cover through a laser receiver; Principle 2: When the laser emitted by the laser transmitter passes through the monitoring area, it will excite the sediments, i.e., by-products, in the monitoring area, thereby emitting radiation of a characteristic wavelength, and the thickness of the by-products can be obtained by detecting the radiation of the characteristic wavelength through the laser receiver.

[0034] That is, the utility model provides an indicator for quantifying the byproduct 300 covered on the dome cover 130, so that the byproduct thickness in the monitoring area 131 of the dome cover 130 can be monitored in real time, and can effectively ensure that when the byproduct 300 covered on the dome cover 130 accumulates to a certain thickness, the dome cover 130 can be cleaned or etched to remove the byproduct 300 covered on the dome cover 130 in time, that is, accurate guidance is provided for cleaning the dome cover 130 or etching to remove the byproduct 300 covered on the dome cover 130, thereby preventing the byproduct 300 accumulated on the dome cover 130 from falling on the surface of the wafer 400 and affecting the quality of the wafer 400 and the temperature of the deposition reaction chamber 140, and also preventing the dome cover 130 whose accumulated byproduct 300 has not reached the deterioration level from being sent for cleaning, which is beneficial to extending the service life of the dome cover 130 and reducing the investment cost.

[0035] In the second embodiment, the laser transmitter and the laser receiver are both arranged on the side walls of the cover body, and the laser receiver is arranged on the reflected light path of the light after the light is reflected by the dome cover, and / or the laser receiver and the laser transmitter are arranged on two symmetrical side walls of the cover body relative to each other.

[0036] In some embodiments of the present invention, reference Figure 1 and Figure 2The monitoring area 131 is an area where the dome cover 130 is easily covered and accumulated byproducts 300.

[0037] In some embodiments of the present invention, reference Figure 1 The dome cover 130 is a hollow hemispherical structure, which, together with the carrier 120 and the liner 150, forms a deposition reaction chamber 140, and the wafer 400 is placed on the carrier 120 for deposition reaction.

[0038] In some embodiments of the present invention, the dome cover is made of transparent quartz material, so that the laser emitted by the laser transmitter can pass through the dome cover.

[0039] In some embodiments of the present invention, reference Figure 1 and Figure 2 The vapor deposition equipment also includes a suction pump 160 and a supplementary pipeline 170 of the main gas circuit. The gas outlet of the suction pump 160 is connected to the deposition reaction chamber 140, and the gas outlet of the supplementary pipeline 170 is connected to the deposition reaction chamber 140. The monitoring area 131 includes an area of ​​the dome cover 130 close to the gas outlet of the suction pump 160 and / or an area close to the gas outlet of the supplementary pipeline 170. The area of ​​the dome cover 130 close to the outlet of the suction pump 160 and / or the area close to the outlet of the supplementary pipeline 170 is an area that is easily covered with accumulated byproducts 300. By monitoring the thickness of the above-mentioned area, i.e., the area covered with the most byproducts on the dome cover 130, it is ensured that the dome cover 130 can be cleaned or etched away byproducts 300 on the dome cover 130 in time, so as to prevent the byproducts 300 accumulated on the dome cover 130 from falling on the surface of the wafer 400 and affecting the quality of the wafer 400 and the temperature of the deposition reaction chamber 140.

[0040] In some specific embodiments of the present utility model, reference Figure 1 and Figure 2 The monitoring area 131 includes the inner wall of a quarter of the hemisphere of the dome cover 130 between the area of ​​the air outlet of the suction pump 160 and the air outlet of the supplementary pipeline 170 .

[0041] In some embodiments of the present invention, reference Figure 1 and Figure 2The vapor deposition equipment further includes a suction pump 160 and a supplementary pipeline 170 of the main gas path, and the suction pump 160 is arranged near the first side wall of the cover 110, and the supplementary pipeline 170 of the main gas path is arranged near the second side wall of the cover 110; the laser emitter 210 is arranged on the first side wall and / or the second side wall. So that the laser 240 emitted by the laser emitter 210 passes through the monitoring area 131 of the dome cover 130 where the byproducts 300 are easily covered and accumulated, so as to ensure that the thickness of the byproducts covered with the most on the dome cover 130 can be accurately monitored, so as to ensure that the dome cover 130 can be cleaned in time or the byproducts 300 covered on the dome cover 130 can be removed by etching, so as to prevent the byproducts 300 accumulated on the dome cover 130 from falling on the surface of the wafer 400 and affecting the quality of the wafer 400 and the temperature of the deposition reaction chamber 140.

[0042] In some embodiments of the present invention, the laser receiver is disposed on a side wall of the cover body opposite to the first side wall, and / or the laser receiver is disposed on a side wall of the cover body opposite to the second side wall.

[0043] In some embodiments of the present invention, the laser emitter includes at least one of a linear scanning laser sensor and a face scanning laser sensor to ensure that the byproduct thickness of the monitoring area can be accurately monitored in real time.

[0044] In some embodiments of the present invention, reference Figure 3 The detection device 200 further includes an alarm unit 250, which is connected to the processing unit 230. The processing unit 230 is used to control the alarm unit 250 to sound an alarm when the thickness of the byproduct in the monitoring area 131 is greater than or equal to a preset thickness. That is, after monitoring that the thickness of the byproduct is greater than or equal to the preset thickness, the alarm unit 250 sounds an alarm to remind the staff to clean the dome cover 130 in time or etch away the byproduct 300 covered on the dome cover 130 to prevent the byproduct 300 accumulated on the dome cover 130 from falling on the surface of the wafer 400 and affecting the quality of the wafer 400 and the temperature of the deposition reaction chamber 140.

[0045] In some embodiments of the utility model, the preset thickness is 10nm-100μm. That is, the preset thickness is less than or equal to the by-product thickness set when the dome cover needs to remove by-products, which can be determined according to the model of the vapor deposition equipment and the size of the wafer. This allows the dome cover to be cleaned or etched to remove the by-products covered on the dome cover in time, avoiding the by-products accumulated on the dome cover from falling on the wafer surface and affecting the wafer quality and the temperature of the deposition reaction chamber.

[0046] In some embodiments of the utility model, there are a plurality of laser emitters, and the plurality of laser emitters are arranged to diverge from the air outlet of the suction pump as the center in a direction away from the air outlet of the suction pump, and / or the plurality of laser emitters are arranged to diverge from the air outlet of the supplementary pipeline as the center in a direction away from the air outlet of the supplementary pipeline. The area of ​​the dome cover close to the air outlet of the suction pump and / or the area close to the air outlet of the supplementary pipeline is an area that is easily covered with accumulated by-products. By monitoring the thickness of by-products in the above-mentioned areas, it is ensured that the dome cover can be cleaned in time or etched to remove the by-products covered on the dome cover, so as to prevent the by-products accumulated on the dome cover from falling on the wafer surface and affecting the wafer quality and the temperature of the deposition reaction chamber.

[0047] In some embodiments of the utility model, when there are multiple laser receivers, the processing unit obtains the by-product thicknesses of multiple monitoring areas, and the processing unit is used to control the alarm unit to issue an alarm when the by-product thickness of any monitoring area is greater than or equal to a preset thickness.

[0048] In some embodiments of the present invention, reference Figure 3 The detection device 200 also includes a storage unit 260, which is connected to the processing unit 230. The processing unit 230 is used to send the byproduct thickness of the monitoring area 131 to the storage unit 260 for storage. The laser emitter 210 and the laser receiver 220 can be detachably set on the cover body 110, so as to adjust the number of the laser emitter 210 and the laser receiver 220 according to the historical data stored in the storage unit 260, and adjust the positions of the laser emitter 210 and the laser receiver 220 on the cover body 110.

[0049] Specifically, the storage unit stores the byproduct thickness of the monitoring area, the position where the laser transmitter is set on the cover body, and the position where the laser receiver is set on the cover body.

[0050] In some embodiments of the utility model, the cover body is a flange made of iron material, the laser transmitter and the laser receiver both include a magnetic attraction part, and the laser transmitter and the laser receiver are both detachably arranged on the cover body through the magnetic attraction part.

[0051] In some embodiments of the present invention, reference Figure 3The detection device 200 further includes a display unit 270, which is connected to the processing unit 230. The processing unit 230 is used to send the byproduct thickness of the monitoring area 131 to the display unit 270, and the display unit 270 is used to display the byproduct thickness of the monitoring area 131. This allows the staff to check the byproduct thickness of the monitoring area 131 at any time to ensure that the dome cover 130 can be cleaned in time or the byproduct 300 covered on the dome cover 130 can be etched away to prevent the byproduct 300 accumulated on the dome cover 130 from falling on the surface of the wafer 400 and affecting the quality of the wafer 400 and the temperature of the deposition reaction chamber 140.

[0052] In some embodiments of the present invention, reference Figure 3 The detection device 200 further includes a storage unit 260, which is used to store the laser transmittance comparison information of the normal dome cover, and the storage unit 260 is connected to the processing unit 230, and the processing unit 230 is used to calculate the laser attenuation according to the laser transmittance information and the laser transmittance comparison information, so as to obtain the byproduct thickness of the monitoring area, so as to accurately obtain the byproduct thickness of the monitoring area. The normal dome cover 130 is a dome cover 130 that is not covered with byproducts.

[0053] Although the embodiments of the present invention are described in detail above, it is obvious to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as described in the claims. Moreover, the present invention described herein may have other embodiments and may be implemented or realized in a variety of ways.

Claims

1. A detection device for a vapor deposition device, characterized in that: The vapor deposition equipment comprises a cover body, and a carrier platform and a dome cover arranged in a receiving cavity of the cover body, wherein the dome cover and the carrier platform are surrounded to form a deposition reaction chamber; The detection device includes a laser transmitter, a laser receiver and a processing unit; the laser transmitter and the laser receiver are respectively arranged on two symmetrical side walls of the cover body, and the monitoring area of ​​the dome cover is located between the laser transmitter and the laser receiver, so that the laser emitted by the laser transmitter passes through the monitoring area; the laser receiver is connected to the processing unit, the laser receiver is used to receive the laser and send laser transmittance information to the processing unit, and the processing unit is used to obtain the by-product thickness of the monitoring area according to the laser transmittance information.

2. The detection device for vapor deposition equipment according to claim 1, characterized in that: It also includes a storage unit, which is used to store laser transmittance comparison information of a normal dome cover. The storage unit is connected to the processing unit, and the processing unit is used to calculate the laser attenuation according to the laser transmittance information and the laser transmittance comparison information, so as to obtain the byproduct thickness of the monitoring area.

3. A detection device for a vapor deposition device, characterized in that: The vapor deposition equipment comprises a cover body, and a carrier platform and a dome cover arranged in a receiving cavity of the cover body, wherein the dome cover and the carrier platform are surrounded to form a deposition reaction chamber; The detection device includes a laser transmitter, a laser receiver and a processing unit, wherein the laser receiver is connected to the processing unit; the laser transmitter is used to emit detection light to the monitoring area of ​​the dome cover, the laser receiver is used to receive the detection light emitted by the dome cover, and send the received light information to the processing unit; the processing unit is used to obtain the byproduct thickness of the monitoring area according to the received light information.

4. The detection device for vapor deposition equipment according to claim 1 or 3, characterized in that: The vapor deposition equipment also includes a suction pump and a supplementary pipeline of the main gas circuit, the gas outlet of the suction pump is connected to the deposition reaction chamber, the gas outlet of the supplementary pipeline is connected to the deposition reaction chamber, and the monitoring area includes an area of ​​the dome cover close to the gas outlet of the suction pump and / or an area close to the gas outlet of the supplementary pipeline.

5. The detection device for vapor deposition equipment according to claim 1 or 3, characterized in that: The vapor deposition equipment also includes a suction pump and a supplementary pipeline for the main gas circuit, and the suction pump is arranged close to the first side wall of the cover body, and the supplementary pipeline for the main gas circuit is arranged close to the second side wall of the cover body; the laser emitter is arranged on the first side wall and / or the second side wall.

6. The detection device for vapor deposition equipment according to claim 1 or 3, characterized in that: It also includes an alarm unit, which is connected to the processing unit. The processing unit is used to control the alarm unit to issue an alarm when the thickness of the byproduct in the monitoring area is greater than or equal to a preset thickness.

7. The detection device for vapor deposition equipment according to claim 6, characterized in that: The preset thickness is 10 nm-100 μm.

8. The detection device for vapor deposition equipment according to claim 4, characterized in that: There are a plurality of laser emitters, and the plurality of laser emitters are arranged to diverge with the air outlet of the suction and pressure pump as the center in a direction away from the air outlet of the suction and pressure pump, and / or the plurality of laser emitters are arranged to diverge with the air outlet of the supplementary pipeline as the center in a direction away from the air outlet of the supplementary pipeline.

9. The detection device for vapor deposition equipment according to claim 8, characterized in that: It also includes a storage unit, which is connected to the processing unit. The processing unit is used to send the byproduct thickness of the monitoring area to the storage unit for storage. The laser transmitter and the laser receiver are both detachably arranged on the cover body.

10. The detection device for vapor deposition equipment according to claim 1 or 3, characterized in that: It also includes a display unit, which is connected to the processing unit. The processing unit is used to send the byproduct thickness of the monitoring area to the display unit, and the display unit is used to display the byproduct thickness of the monitoring area.

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