Heterojunction solar cell and assembly and system comprising same

Abstract

The utility model relates to the technical field of solar power generation, and discloses a heterojunction solar cell, and an assembly and a system comprising the heterojunction solar cell. The heterojunction solar cell comprises a silicon substrate, a first intrinsic silicon oxide layer, a first intrinsic amorphous silicon layer, a second intrinsic silicon oxide layer, a first doped amorphous silicon layer, a first transparent conductive layer, a third intrinsic silicon oxide layer, a second intrinsic amorphous silicon layer, a fourth intrinsic silicon oxide layer, a second doped amorphous silicon layer and a second transparent conductive layer, according to the invention, the first intrinsic silicon oxide layer, the second intrinsic silicon oxide layer, the third intrinsic silicon oxide layer and the fourth intrinsic silicon oxide layer are arranged; the first intrinsic silicon oxide layer, the second intrinsic silicon oxide layer, the third intrinsic silicon oxide layer and the fourth intrinsic silicon oxide layer are one or more of intrinsic polycrystalline silicon oxide, intrinsic microcrystalline silicon oxide and intrinsic nanocrystalline silicon oxide, so that the overall resistance value of the battery can be reduced; and the overall electron transmission performance and the front light transmittance of the battery can be improved.

Description

Technical Field

[0001] The utility model relates to the technical field of solar power generation, in particular to a heterojunction solar cell, a component and a system including the same. Background Art

[0002] At present, in existing heterojunction solar cells, an intrinsic amorphous silicon layer, a doped amorphous silicon layer, a transparent conductive film and a metal electrode are usually deposited on the front and back sides of a silicon substrate in sequence. This heterojunction structure composed of a single-layer intrinsic amorphous silicon layer, a doped amorphous silicon layer and single-crystalline silicon not only has a large contact resistance, but also has a small amount of interface fixed charge, and the field effect passivation effect is poor, which will affect the fill factor of the battery. In addition, the single-layer intrinsic amorphous silicon layer contributes less to the overall electron transport performance of the battery, which will affect the photoelectric conversion efficiency of the battery, as well as the light transmittance of the doped amorphous silicon layer and the transparent conductive film. Summary of the Utility Model

[0003] The purpose of the utility model is to provide a heterojunction solar cell, a component and a system including the same, which can not only reduce the overall resistance value of the battery, improve the passivation effect, but also improve the overall electron transport performance and the front-side light transmittance of the battery, and optimize the conversion efficiency of the battery.

[0004] To achieve the above purpose, the utility model provides a heterojunction solar cell, including: a silicon substrate, a first intrinsic silicon oxide layer, a first intrinsic amorphous silicon layer, a second intrinsic silicon oxide layer, a first doped amorphous silicon layer, a first transparent conductive layer, a third intrinsic silicon oxide layer, a second intrinsic amorphous silicon layer, a fourth intrinsic silicon oxide layer, a second doped amorphous silicon layer, a second transparent conductive layer, a first electrode and a second electrode. The first intrinsic silicon oxide layer, the first intrinsic amorphous silicon layer, the second intrinsic silicon oxide layer, the first doped amorphous silicon layer and the first transparent conductive layer are arranged on one side of the silicon substrate along a first direction. The third intrinsic silicon oxide layer, the second intrinsic amorphous silicon layer, the fourth intrinsic silicon oxide layer, the second doped amorphous silicon layer and the second transparent conductive layer are arranged on the other side of the silicon substrate along a direction opposite to the first direction. The first electrode is arranged on the first transparent conductive layer, and the second electrode is arranged on the second transparent conductive layer. The first intrinsic silicon oxide layer, the second intrinsic silicon oxide layer, the third intrinsic silicon oxide layer and the fourth intrinsic silicon oxide layer are one or more of intrinsic polycrystalline silicon oxide, intrinsic microcrystalline silicon oxide and intrinsic nanocrystalline silicon oxide.

[0005] Optionally, it further includes: a third intrinsic amorphous silicon layer and a fourth intrinsic amorphous silicon layer. The third intrinsic amorphous silicon layer is arranged between the first doped amorphous silicon layer and the second intrinsic silicon oxide layer, and the fourth intrinsic amorphous silicon layer is arranged between the second doped amorphous silicon layer and the fourth intrinsic silicon oxide layer.

[0006] Optionally, it includes a plurality of the first electrodes and a plurality of the second electrodes. The plurality of the first electrodes are arranged at intervals in a second direction on the first transparent conductive layer, the plurality of the second electrodes are arranged at intervals in the second direction on the second transparent conductive layer, and the plurality of the first electrodes and the plurality of the second electrodes are arranged in one-to-one correspondence.

[0007] Optionally, the first doped amorphous silicon layer is an N-type doped amorphous silicon layer, and the second doped amorphous silicon layer is a P-type doped amorphous silicon layer.

[0008] Optionally, the silicon substrate is an N-type silicon wafer.

[0009] To achieve the same purpose, the present utility model further provides a solar module, including the heterojunction solar cell as described above.

[0010] To achieve the same purpose, the present utility model further provides a solar system, including the solar module as described above.

[0011] Compared with the prior art, the heterojunction solar cell and the module and system including the same according to the embodiments of the present utility model have the beneficial effects that: by providing a first intrinsic silicon oxide layer between the silicon substrate and the first intrinsic amorphous silicon layer, a third intrinsic silicon oxide layer between the silicon substrate and the second intrinsic amorphous silicon layer, a second intrinsic silicon oxide layer between the first doped amorphous silicon layer and the first intrinsic amorphous silicon layer, and a fourth intrinsic silicon oxide layer between the second intrinsic amorphous silicon layer and the second doped amorphous silicon layer, and making the first intrinsic silicon oxide layer, the second intrinsic silicon oxide layer, the third intrinsic silicon oxide layer, and the fourth intrinsic silicon oxide layer be one or more of intrinsic polycrystalline silicon oxide, intrinsic microcrystalline silicon oxide, and intrinsic nanocrystalline silicon oxide, the interface defect state density of the battery is reduced, and then the contact resistance is reduced. Compared with a single-layer single intrinsic amorphous silicon layer, the passivation effect of the battery can also be increased. In addition, the present application can also enhance the electron transport performance of the battery, improve the conversion efficiency, and the outermost third intrinsic silicon oxide layer and fourth intrinsic silicon oxide layer can also improve the light transmittance on the light-receiving side of the battery. Description of the Drawings

[0012] Figure 1 It is a schematic structural diagram of Embodiment 1 of the present utility model;

[0013] Figure 2 It is a schematic structural diagram of Embodiment 2 of the present utility model.

[0014] In the figure, 1 is a silicon substrate; 2 is a first intrinsic silicon oxide layer; 3 is a first intrinsic amorphous silicon layer; 4 is a second intrinsic silicon oxide layer; 5 is a first doped amorphous silicon layer; 6 is a first transparent conductive layer; 7 is a third intrinsic silicon oxide layer; 8 is a second intrinsic amorphous silicon layer; 9 is a fourth intrinsic silicon oxide layer; 10 is a second doped amorphous silicon layer; 11 is a second transparent conductive layer; 12 is a first electrode; 13 is a second electrode; 14 is a third intrinsic amorphous silicon layer; 15 is a fourth intrinsic amorphous silicon layer; X is a first direction; Y is a second direction. Detailed implementation manners

[0015] The following will further describe in detail the detailed implementation manners of the present utility model in conjunction with the accompanying drawings and embodiments. The following embodiments are used to illustrate the present utility model, but are not used to limit the scope of the present utility model.

[0016] In the description of the present utility model, it should be understood that the orientation or positional relationship indicated by terms such as "top", "bottom", "inside", "outside", etc. is based on the orientation or positional relationship shown in the accompanying drawings. It is only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to the present utility model.

[0017] In addition, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present utility model, "a plurality" means two or more, unless otherwise specifically defined.

[0018] As Figure 1As shown in the figure, a heterojunction solar cell according to Embodiment 1 of the present utility model includes: a silicon substrate 1, a first intrinsic silicon oxide layer 2, a first intrinsic amorphous silicon layer 3, a second intrinsic silicon oxide layer 4, a first doped amorphous silicon layer 5, a first transparent conductive layer 6, a third intrinsic silicon oxide layer 7, a second intrinsic amorphous silicon layer 8, a fourth intrinsic silicon oxide layer 9, a second doped amorphous silicon layer 10, a second transparent conductive layer 11, a first electrode 12 and a second electrode 13. The first intrinsic silicon oxide layer 2, the first intrinsic amorphous silicon layer 3, the second intrinsic silicon oxide layer 4, the first doped amorphous silicon layer 5 and the first transparent conductive layer 6 are disposed on one side of the silicon substrate 1 along the first direction X. The third intrinsic silicon oxide layer 7, the second intrinsic amorphous silicon layer 8, the fourth intrinsic silicon oxide layer 9, the second doped amorphous silicon layer 10 and the second transparent conductive layer 11 are disposed on the other side of the silicon substrate 1 along the direction opposite to the first direction X. The first electrode 12 is disposed on the first transparent conductive layer 6, and the second electrode 13 is disposed on the second transparent conductive layer 11. The first intrinsic silicon oxide layer 2, the second intrinsic silicon oxide layer 4, the third intrinsic silicon oxide layer 7 and the fourth intrinsic silicon oxide layer 9 are one or more of intrinsic polycrystalline silicon oxide, intrinsic microcrystalline silicon oxide and intrinsic nanocrystalline silicon oxide.

[0019] Based on the above solution, in the present application, the first intrinsic silicon oxide layer 2 is disposed between the silicon substrate 1 and the first intrinsic amorphous silicon layer 3, the third intrinsic silicon oxide layer 7 is disposed between the silicon substrate 1 and the second intrinsic amorphous silicon layer 8, the second intrinsic silicon oxide layer 4 is disposed between the first doped amorphous silicon layer 5 and the first intrinsic amorphous silicon layer 3, and the fourth intrinsic silicon oxide layer 9 is disposed between the second intrinsic amorphous silicon layer 8 and the second doped amorphous silicon layer 10. Moreover, the first intrinsic silicon oxide layer 2, the second intrinsic silicon oxide layer 4, the third intrinsic silicon oxide layer 7 and the fourth intrinsic silicon oxide layer 9 are one or more of intrinsic polycrystalline silicon oxide, intrinsic microcrystalline silicon oxide and intrinsic nanocrystalline silicon oxide, so as to reduce the density of interface defect states of the battery, thereby reducing the contact resistance. Compared with a single-layer intrinsic amorphous silicon layer, the passivation effect of the battery can also be increased. In addition, the present application can also enhance the electron transport performance of the battery, improve the conversion efficiency, and the outermost third intrinsic silicon oxide layer 7 and fourth intrinsic silicon oxide layer 9 can also improve the light transmittance on the light-receiving side of the battery.

[0020] As Figure 1 shown, for the convenience of use, it includes a plurality of first electrodes 12 and a plurality of second electrodes 13. The plurality of first electrodes 12 are arranged at intervals along the second direction Y on the first transparent conductive layer 6, the plurality of second electrodes 13 are arranged at intervals along the second direction Y on the second transparent conductive layer 11, and the plurality of first electrodes 12 and the plurality of second electrodes 13 are arranged in one-to-one correspondence.

[0021] Optionally, for the convenience of use, the first doped amorphous silicon layer 5 is an N-type doped amorphous silicon layer, that is, phosphorus doping is used.

[0022] Optionally, for ease of use, the second doped amorphous silicon layer 10 is a P-type doped amorphous silicon layer, i.e., boron doping is used.

[0023] Optionally, for ease of use, the silicon substrate 1 is an N-type silicon wafer.

[0024] Embodiment 2

[0025] As Figure 2 shown, the difference between this Embodiment 2 and Embodiment 1 is that: it further includes a third intrinsic amorphous silicon layer 14 and a fourth intrinsic amorphous silicon layer 15. The third intrinsic amorphous silicon layer 14 is disposed between the first doped amorphous silicon layer 5 and the second intrinsic silicon oxide layer 4, and the fourth intrinsic amorphous silicon layer 15 is disposed between the second doped amorphous silicon layer 10 and the fourth intrinsic silicon oxide layer 9.

[0026] Based on the above solution, the present application disposes a third intrinsic amorphous silicon layer 14 between the first doped amorphous silicon layer 5 and the second intrinsic silicon oxide layer 4, and disposes a fourth intrinsic amorphous silicon layer 15 between the second doped amorphous silicon layer 10 and the fourth intrinsic silicon oxide layer 9 to further improve the passivation effect of the battery.

[0027] The embodiment of the present utility model further provides a solar module, including the heterojunction solar cell as described above.

[0028] The embodiment of the present utility model further provides a solar system, including the solar module as described above.

[0029] In summary, the embodiment of the present utility model provides a heterojunction solar cell and a module and a system including the same. By disposing a first intrinsic silicon oxide layer 2 between the silicon substrate 1 and the first intrinsic amorphous silicon layer 3, disposing a third intrinsic silicon oxide layer 7 between the silicon substrate 1 and the second intrinsic amorphous silicon layer 8, disposing a second intrinsic silicon oxide layer 4 between the first doped amorphous silicon layer 5 and the first intrinsic amorphous silicon layer 3, and disposing a fourth intrinsic silicon oxide layer 9 between the second intrinsic amorphous silicon layer 8 and the second doped amorphous silicon layer 10, and making the first intrinsic silicon oxide layer 2, the second intrinsic silicon oxide layer 4, the third intrinsic silicon oxide layer 7, and the fourth intrinsic silicon oxide layer 9 be one or more of intrinsic polycrystalline silicon oxide, intrinsic microcrystalline silicon oxide, and intrinsic nanocrystalline silicon oxide, the interfacial defect state density of the battery is reduced, and then the contact resistance is reduced. Compared with a single-layer intrinsic amorphous silicon layer, the passivation effect of the battery can also be increased. In addition, the present application can also enhance the electron transport performance of the battery, improve the conversion efficiency, and the outermost third intrinsic silicon oxide layer 7 and fourth intrinsic silicon oxide layer 9 can also improve the light transmittance on the light-receiving side of the battery.

[0030] The above are only the preferred embodiments of the present utility model. It should be noted that for those of ordinary skill in the art, without departing from the technical principle of the present utility model, several improvements and replacements can be made, and these improvements and replacements should also be regarded as the protection scope of the present utility model.

Claims

1. A heterojunction solar cell, characterized in that: include: Silicon substrate; A first intrinsic silicon oxide layer, a first intrinsic amorphous silicon layer, a second intrinsic silicon oxide layer, a first doped amorphous silicon layer and a first transparent conductive layer are arranged on one side of the silicon substrate along a first direction; A third intrinsic silicon oxide layer, a second intrinsic amorphous silicon layer, a fourth intrinsic silicon oxide layer, a second doped amorphous silicon layer and a second transparent conductive layer are arranged on the other side of the silicon substrate in a direction opposite to the first direction; a first electrode, the first electrode being disposed on the first transparent conductive layer; a second electrode, the second electrode being disposed on the second transparent conductive layer; The first intrinsic silicon oxide layer, the second intrinsic silicon oxide layer, the third intrinsic silicon oxide layer and the fourth intrinsic silicon oxide layer are one or more of intrinsic polycrystalline silicon oxide, intrinsic microcrystalline silicon oxide and intrinsic nanocrystalline silicon oxide.

2. The heterojunction solar cell according to claim 1, characterized in that: Also includes: A third intrinsic amorphous silicon layer and a fourth intrinsic amorphous silicon layer, wherein the third intrinsic amorphous silicon layer is disposed between the first doped amorphous silicon layer and the second intrinsic silicon oxide layer, and the fourth intrinsic amorphous silicon layer is disposed between the second doped amorphous silicon layer and the fourth intrinsic silicon oxide layer.

3. The heterojunction solar cell according to claim 1, characterized in that: It includes a plurality of first electrodes and a plurality of second electrodes, wherein the plurality of first electrodes are arranged on the first transparent conductive layer at intervals along a second direction, and the plurality of second electrodes are arranged on the second transparent conductive layer at intervals along the second direction, and the plurality of first electrodes and the plurality of second electrodes are arranged in one-to-one correspondence.

4. The heterojunction solar cell according to claim 1, characterized in that: The first doped amorphous silicon layer is an N-type doped amorphous silicon layer.

5. The heterojunction solar cell according to claim 1, characterized in that: The second doped amorphous silicon layer is a P-type doped amorphous silicon layer.

6. The heterojunction solar cell according to claim 1, characterized in that: The silicon substrate is an N-type silicon wafer.

7. A solar panel, characterized in that: A heterojunction solar cell comprising the method according to any one of claims 1 to 6.

8. A solar energy system, characterized in that: Comprising the solar module as claimed in claim 7.

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