Miniaturized ultra-wideband antenna with notch characteristic and communication equipment

Abstract

The utility model provides a miniaturized ultra-wideband antenna with a notch characteristic and communication equipment. The antenna comprises a radiation layer, a dielectric layer and a concave ground layer which are stacked in sequence, the radiation layer comprises a trapezoidal radiation patch, a micro-strip feeder line and a notch slot; one end of the microstrip feeder line is connected with the upper bottom of the trapezoidal radiation patch; the notch slot is arranged at the joint of the trapezoidal radiation patch and the micro-strip feeder line; a T-shaped gap is formed in the sunken ground layer; and a vertical branch of the T-shaped slot corresponds to the trapezoidal radiation patch. The antenna provided by the utility model not only has the characteristics of miniaturization, high radiation efficiency and high gain, but also can effectively suppress in-band interference.

Description

Technical Field

[0001] The utility model relates to the technical field of antennas, and particularly relates to a miniaturized ultra-wideband antenna with notch characteristics and a communication device. Background Art

[0002] Due to advantages such as high transmission rate, low cost, and low power consumption, the research and development of ultra-wideband communication systems have received the attention of many experts, scholars, and engineers. In this context, as one of the key devices in ultra-wideband communication systems, the research on miniaturization and high performance of ultra-wideband antennas has achieved many results. However, for existing miniaturized and high-performance ultra-wideband antennas, they often do not have in-band notches and cannot effectively suppress in-band interference, which greatly affects their use in modern miniaturized wireless communication systems. Summary of the Utility Model

[0003] The technical problem to be solved by the utility model is to provide a miniaturized ultra-wideband antenna with notch characteristics and a communication device, which not only has the characteristics of miniaturization, high radiation efficiency, and high gain, but also can effectively suppress in-band interference.

[0004] To solve the above technical problem, the technical solution adopted by the utility model is as follows:

[0005] A miniaturized ultra-wideband antenna with notch characteristics includes a radiation layer, a dielectric layer, and a sunken ground layer stacked in sequence; the radiation layer includes a trapezoidal radiation patch, a microstrip feeder, and a notch slot; one end of the microstrip feeder is connected to the upper base of the trapezoidal radiation patch; the notch slot is arranged at the connection of the trapezoidal radiation patch and the microstrip feeder; a T-shaped slot is opened on the sunken ground layer; the vertical branch of the T-shaped slot corresponds to the trapezoidal radiation patch.

[0006] Optionally, the notch slot is a U-shaped slot.

[0007] Optionally, the opening of the U-shaped slot faces the trapezoidal radiation patch.

[0008] Optionally, the U-shaped slot is a long U-shaped slot; the length direction of the long U-shaped slot is consistent with the length direction of the microstrip feeder.

[0009] Optionally, there is a preset distance D1 between the end of the long U-shaped slot far from the opening and the feeding point of the microstrip feeder.

[0010] Optionally, the length of the U-shaped slot ranges from 6.1 to 8.1 mm, the width ranges from 0.7 to 1.2 mm; the distance D1 ranges from 5.3 to 7.4 mm.

[0011] Optionally, the horizontal branch of the T-shaped slot is parallel to the microstrip feeder.

[0012] Optionally, the horizontal branch is located at the edge of the sunken ground plane; the width of the horizontal branch ranges from 2 to 3 mm.

[0013] Optionally, the length of the vertical branch of the T-shaped slot ranges from 7 to 9 mm, and the width ranges from 11 to 13 mm; the distance between the vertical branch and the end of the horizontal branch of the T-shaped slot far from the microstrip feeder ranges from 3 to 5.0 mm.

[0014] The second technical solution adopted by the present utility model is as follows:

[0015] A communication device includes the above-mentioned miniaturized ultra-wideband antenna with notch characteristics.

[0016] The beneficial effects of the present utility model are as follows: The miniaturized ultra-wideband antenna with notch characteristics of the present utility model has a radiation layer including a trapezoidal radiation patch, a microstrip feeder, and a notch slot; the notch slot is provided at the connection between the trapezoidal radiation patch and the microstrip feeder, thereby introducing a notch with a separately controllable center frequency, which effectively suppresses in-band interference; at the same time, its sunken ground plane is provided with a T-shaped slot, and the vertical branch of the T-shaped slot corresponds to the trapezoidal radiation patch, which can not only increase the optimized matching of the bandwidth, but also convert the directional antenna into an omnidirectional antenna. Therefore, the antenna of the present utility model not only has the advantages of miniaturization, ultra-wideband, high radiation efficiency, and high gain, but also has a good effect of suppressing in-band interference. Description of the Drawings

[0017] Figure 1 It is a hierarchical structure diagram of the miniaturized ultra-wideband antenna with notch characteristics provided by an embodiment of the present invention;

[0018] Figure 2 It is a front view schematic diagram of the miniaturized ultra-wideband antenna with notch characteristics provided by an embodiment of the present invention;

[0019] Figure 3 It is a back view schematic diagram of the miniaturized ultra-wideband antenna with notch characteristics provided by an embodiment of the present invention;

[0020] Figure 4 It is a dimension parameter comparison diagram in the front view schematic diagram of the miniaturized ultra-wideband antenna with notch characteristics provided by an embodiment of the present invention;

[0021] Figure 5 It is a dimension parameter comparison diagram in the back view schematic diagram of the miniaturized ultra-wideband antenna with notch characteristics provided by an embodiment of the present invention;

[0022] Figure 6The curve of the reflection coefficient varying with the parameter L of the miniaturized ultra-wideband antenna with notch characteristics provided by the embodiment of the present invention S1 for the curve of the reflection coefficient varying with the parameter L

[0023] Figure 7 The curve of the reflection coefficient varying with the parameter L of the miniaturized ultra-wideband antenna with notch characteristics provided by the embodiment of the present invention S2 for the curve of the reflection coefficient varying with the parameter L

[0024] Figure 8 The curve of the reflection coefficient varying with the parameter L of the miniaturized ultra-wideband antenna with notch characteristics provided by the embodiment of the present invention S3 for the curve of the reflection coefficient varying with the parameter L

[0025] Figure 9 The curve of the reflection coefficient varying with the parameter L of the miniaturized ultra-wideband antenna with notch characteristics provided by the embodiment of the present invention S4 for the curve of the reflection coefficient varying with the parameter L

[0026] Figure 10 The curve of the reflection coefficient varying with the parameter W of the miniaturized ultra-wideband antenna with notch characteristics provided by the embodiment of the present invention S2 for the curve of the reflection coefficient varying with the parameter W

[0027] Figure 11 The curve of the reflection coefficient varying with the parameter W of the miniaturized ultra-wideband antenna with notch characteristics provided by the embodiment of the present invention S3 for the curve of the reflection coefficient varying with the parameter W

[0028] Figure 12 The curve of the reflection coefficient varying with the parameter L of the miniaturized ultra-wideband antenna with notch characteristics provided by the embodiment of the present invention RL for the curve of the reflection coefficient varying with the parameter L

[0029] Figure 13 The curve of the reflection coefficient varying with the parameter D1 of the miniaturized ultra-wideband antenna with notch characteristics provided by the embodiment of the present invention

[0030] Figure 14 The simulation result diagram of the reflection coefficient of the miniaturized ultra-wideband antenna with notch characteristics provided by the embodiment of the present invention when using the optimized parameters

[0031] Figure 15 The simulation result diagram of the gain and radiation efficiency of the miniaturized ultra-wideband antenna with notch characteristics provided by the embodiment of the present invention when using the optimized parameters

[0032] Figure 16 The radiation pattern at 3.6 GHz of the miniaturized ultra-wideband antenna with notch characteristics provided by the embodiment of the present invention when using the optimized parameters

[0033] Figure 17The radiation pattern at 6.1 GHz when the optimized parameters are adopted for the miniaturized ultra-wideband antenna with notch characteristics provided by the embodiments of the present invention;

[0034] Figure 18 The radiation pattern at 9.2 GHz when the optimized parameters are adopted for the miniaturized ultra-wideband antenna with notch characteristics provided by the embodiments of the present invention.

[0035] Label description:

[0036] 1. Radiation layer; 2. Dielectric layer; 3. Defective ground plane;

[0037] 21. Trapezoidal radiation patch; 22. Microstrip feeder; 23. Notch slot; 24. Connection point;

[0038] 31. T-shaped slot; 32. Vertical branch; 33. Horizontal branch;

[0039] 231. Upright arm. Specific implementation mode

[0040] To describe in detail the technical content, achieved purpose and effect of the present utility model, the following is described in conjunction with the implementation modes and with reference to the accompanying drawings.

[0041] Please refer to Figures 1 to 3 , Embodiment 1 of the present utility model is as follows:

[0042] This embodiment provides a miniaturized ultra-wideband antenna with notch characteristics. As Figure 1 shown, it includes a radiation layer 1, a dielectric layer 2 and a defective ground plane 3 with a stacked structure; wherein, the radiation layer 1 is mounted on the upper surface of the dielectric layer 2, and the defective ground plane 3 is mounted on the lower surface of the dielectric layer 2. The radiation layer 1 and the defective ground plane 3 are made of metal materials.

[0043] As Figure 2 shown, the radiation layer 1 includes a trapezoidal radiation patch 21, a microstrip feeder 22 and a notch slot 23; one end of the microstrip feeder 22 is connected to the upper base of the trapezoidal radiation patch 21, and the other end (i.e., the feeding end) is connected to the edge position of the dielectric layer 2. The notch slot 23 is arranged at the connection point 24 between the trapezoidal radiation patch 21 and the microstrip feeder 22, and is used to introduce a notch with a separately controllable center frequency.

[0044] In some specific embodiments, the notch slot 23 is a U-shaped notch slot. Preferably, the U-shaped notch slot 23 is a long-strip U-shaped slot. Herein, specifically, two upright arms 231 in the U-shaped slot are extended to form a long-strip U-shaped slot. At the same time, the length direction of the long-strip U-shaped slot is consistent with the length direction of the microstrip feeder. That is to say, the long-strip U-shaped slot and the microstrip feeder are on the same straight line. In addition, the opening of the U-shaped slot faces the trapezoidal radiation patch 21.

[0045] In some other specific embodiments, the center point of the notch slot 23 located at the connection 24 between the trapezoidal radiation patch 21 and the microstrip feeder 22 is close to the connection 24. That is to say, the notch slot 23 "spans" between the trapezoidal radiation patch 21 and the microstrip feeder 22.

[0046] In a preferred example, as Figure 2 shown, the opening of the long-strip U-shaped slot faces the trapezoidal radiation patch and is on the same straight line as the microstrip feeder; at the same time, two-fifths of its length is located on the trapezoidal radiation patch, and the remaining three-fifths is located on the microstrip feeder.

[0047] In this embodiment, the notch slot opened at the connection between the trapezoidal radiation patch and the microstrip feeder can change the input impedance whose half wavelength corresponding to the center frequency is equal to the total length of the notch slot. In this way, the interference caused by narrowband signals in the communication band can be effectively suppressed, so that the antenna has good performance in suppressing in-band interference.

[0048] In this embodiment, the layout design of the radiation layer can effectively optimize the surface circuit distribution on the radiation patch to achieve high gain, and introduce the multi-mode concept to increase the bandwidth to achieve the ultra-wideband characteristic. Therefore, based on the layout design of the radiation layer in this embodiment, the antenna characteristics of ultra-wideband and high gain can be shown.

[0049] As Figure 3 shown, a T-shaped slot 31 is opened on the sunken ground layer 3 of this embodiment; the T-shaped slot 31 is composed of a vertical branch 32 and a horizontal branch 33 which are perpendicularly arranged. Among them, the vertical branch 32 corresponds to the trapezoidal radiation patch 21. That is to say, the two correspond to each other (there is a large part of overlap) in the hierarchical structure.

[0050] In some specific embodiments, the horizontal branch 33 in the sunken ground layer 3 is parallel to the microstrip feeder 22 in the radiation layer 1. Preferably, the horizontal branch 33 is located at the edge position of the sunken ground layer 3. Preferably, one end of the horizontal branch 33 is connected to the edge position of the sunken ground layer 3.

[0051] Preferably, the horizontal branch 33 in the T-shaped slot 31 opened in the sunken formation 3 is located at the edge of the sunken formation 3, and one end thereof is connected to the edge position of the sunken formation 3, and the other end is left with a preset distance from the edge position of the sunken formation 3; combined with Figure 2 and Figure 3 it can be known that the longer end of the horizontal branch 33 in the sunken formation 3 corresponds to the microstrip feeder 22 in the radiation layer 2. The vertical branch 32 in the T-shaped slot 31 corresponds to the trapezoidal radiation patch 21 in the radiation layer 1 in the hierarchical structure, and the length of the vertical branch 32 is the same as the value of the height of the trapezoidal radiation patch 21, that is, in the front perspective angle of the hierarchical structure, the trapezoidal radiation patch 21 completely overlaps with the T-shaped slot 31.

[0052] In this embodiment, the layout design of the sunken formation can effectively change the magnetic field distribution of the radiation layer and the formation, and introduce a resonance mode, so as to further increase the bandwidth and optimize the in-band reflection coefficient. At the same time, it can also convert the directional antenna into an omnidirectional antenna; in addition, it also has the advantages of simple structure and few parameters to be optimized.

[0053] Embodiment 2 of the present utility model is as follows:

[0054] Please refer to Figures 2 to 16 , this embodiment is further expanded based on Embodiment 1, and specifically optimizes the parameters of the radiation layer and the defect layer of the antenna to obtain the desired antenna performance.

[0055] For the antenna structure described in Embodiment 1, its working center frequency is mainly determined by the parameters of the radiation patches (including trapezoidal radiation patches, microstrip feeders, and notch slots) constituting the radiation layer; its radiation performance is mainly determined by the parameters of the T-shaped slots in the defect formation.

[0056] In this embodiment, combined with Figure 2 and Figure 4 , the overall size of the circuit board formed by laminating the radiation layer 1, the dielectric layer 2, and the defect formation 3 is length L G * width W G ; wherein, the preferred value range of the length L G is 23 - 27 mm; the preferred value range of the width W G is 22 - 26 mm. In a preferred example, the overall size of the circuit board is length L G * width W G = 25 mm * 24 mm.

[0057] As Figure 4 shows the front of the circuit board layout. Combined with Figure 2 it can be known that the upper base L RL of the trapezoidal radiation patch 21 in the radiation layer 1 thereon has a preferred value range of 6.7 - 8.7 mm, and the lower base L RRThe preferred value range of is 8.8 - 9.2 mm, and the height h R The preferred value range of is 7.8 - 8.2 mm. In a preferred example, the size of the trapezoidal radiation patch 21 is the upper base L RL = 6.7 mm, the lower base L RR = 9.0 mm, and the height h R = 8.0 mm. The distance D2 from one end of the upper base of the trapezoidal radiation patch 21 to the corresponding dielectric layer edge (i.e., the circuit board edge) preferably has a value range of 10.4 - 10.8 mm; the distance D3 from the lower base of the trapezoidal radiation patch 21 to the corresponding dielectric layer edge (i.e., the circuit board edge) preferably has a value range of 7.8 - 8.2 mm. In a preferred example, the distance D2 from one end of the upper base of the trapezoidal radiation patch to the upper edge of the dielectric board is 10.6 mm, and the distance D3 from the lower base to the corresponding dielectric board edge is 8.0 mm.

[0058] The length L of the microstrip feeder 22 in the radiation layer 1 F The preferred value range of is 6 - 10 mm, and the width W F The preferred value range of is 1.5 - 1.55 mm. In a preferred example, the size of the microstrip feeder 22 is L F *W F = 8.0 * 1.53 mm. Preferably, the microstrip feeder 22 is a 50-ohm feeder.

[0059] The length L of the U-shaped notch slot in the radiation layer S2 , that is, the preferred value range of the length of the vertical arm is 6.1 - 8.1 mm; the width L of the U-shaped notch slot S1 , that is, the preferred value range of the distance between the two vertical arms is 0.7 - 1.2 mm; the arm thickness W of the U-shaped notch slot S1 The preferred value range of is 0.1 - 0.15 mm. The spacing distance D1 between the closed end (i.e., the end far from the opening) of the U-shaped notch slot and the feeding point of the microstrip feeder (i.e., the circuit board edge) preferably has a value range of 5.3 - 7.4 mm. In a preferred example, the size of the U-shaped notch slot is L S2 *L S1 *W S1 = 7.1 * 1.13 * 0.13 mm, and the distance D1 between its closed end and the circuit board edge is 5.37 mm.

[0060] As Figure 5 shown is the back of the circuit board layout. Combining Figure 3 it can be known that the length L of the vertical branch 32 of the T-shaped slot 31 opened in the sunken ground layer 3 on it S3 The preferred value range of is 7 - 9 mm, and the width W S3The value range of F is 11 - 13 mm; the distance between one end of the vertical branch 32 and the middle microstrip feeder on the same side of the horizontal branch 33, that is, the length L of the microstrip feeder S4 The value range of S2 is 6 - 10 mm, the distance L between the vertical branch and the other end (i.e., the end far from the microstrip feeder) S3 The value range of S3 is 3 - 5 mm. The width W of the horizontal branch of the T-shaped slot F The preferred value range of S4 is 2 - 3 mm. In a preferred example, the size of the T-shaped slot is L S2 = 8 mm, W

[0061] In a preferred example of this embodiment, the dielectric constant of the dielectric layer is 4.4, the dielectric loss is 0.02, and the thickness is 0.8 mm; the metal layer is copper-plated with a thickness of 0.035 mm.

[0062] Next, experimental data will be used to verify the expected antenna performance that can be achieved by the preferred values of the key parameters in the miniaturized ultra-wideband antenna with notch characteristics provided in this embodiment.

[0063] As Figure 6 shown, it is the variation of the miniaturized ultra-wideband antenna with notch characteristics provided in this embodiment with respect to the parameter L S1 variation. It can be seen that as the width L S1 of the U-shaped notch slot in the radiation layer increases, the reflection coefficient of the antenna will deteriorate within the passband, and the bandwidth will increase slightly; the notch center frequency will shift downward as the width L S1 of the U-shaped notch slot increases, and the isolation degree will deteriorate at the notch center frequency. Based on this, in this embodiment, by limiting the preferred value range of the width L S1 of the U-shaped notch slot to 0.7 - 1.2 mm, and the optimal value is 1.13 mm, it will be possible to make the impedance in the passband of the antenna the most matched and the isolation degree at the notch center frequency the highest while ensuring the widest passband bandwidth.

[0064] As Figure 7 shown, it is the variation of the miniaturized ultra-wideband antenna with notch characteristics provided in this embodiment with respect to the parameter L S2 variation. It can be seen that as the length L S2 of the U-shaped notch slot in the radiation layer increases, the reflection coefficient of the antenna remains basically unchanged in the part less than the notch center frequency, deteriorates in the part greater than the notch center frequency, and the bandwidth becomes narrower; the notch center frequency shifts downward. Based on this, in this embodiment, by limiting the length L S2The preferred value range is 6.1 - 8.1 mm, and the optimal value is 7.1 mm, which can make the impedance in the passband most matched and the isolation at the notch center frequency highest when the antenna ensures the widest passband bandwidth.

[0065] As Figure 8 shown, it is the variation of the miniaturized ultra-wideband antenna with notch characteristics provided by this embodiment with respect to the parameter L S3 variation. It can be seen that as the length L S3 of the vertical branch of the T-shaped slot in the sunken ground increases, the reflection coefficient of the antenna deteriorates in the part less than the notch center frequency, improves in the high-frequency part greater than the notch center frequency, and the bandwidth is the widest when L S3 = 8.0 mm; the notch center frequency hardly changes, but the isolation at the notch center frequency deteriorates. Based on this, in this embodiment, by limiting the preferred value range of the length L S3 of the vertical branch of the T-shaped slot to be 7 - 9 mm, and the optimal value to be 8 mm, it can make the impedance in the passband most matched and the isolation at the notch center frequency highest when the antenna ensures the widest passband bandwidth.

[0066] As Figure 9 shown, it is the variation of the miniaturized ultra-wideband antenna with notch characteristics provided by this embodiment with respect to the parameter L S4 variation. It can be seen that as the distance L S4 between the vertical branch and the end of the horizontal branch of the T-shaped slot in the sunken ground that is far from the microstrip feeder increases, the reflection coefficient of the antenna improves in the passband, and the bandwidth increases; the notch center frequency remains unchanged. Based on this, in this embodiment, by limiting the distance L S4 between the vertical branch and the end of the horizontal branch of the T-shaped slot that is far from the microstrip feeder to be in the range of 3 - 5 mm, and the optimal value to be 5.0 mm, it can make the impedance in the passband most matched and the isolation at the notch center frequency highest when the antenna ensures the widest passband bandwidth.

[0067] As Figure 10 shown, it is the variation of the miniaturized ultra-wideband antenna provided by this embodiment with respect to the parameter W S2 variation. It can be seen that as the width W S2 of the horizontal branch of the T-shaped slot in the sunken ground increases, the reflection coefficient of the antenna improves in the part less than the notch center frequency, deteriorates in the part greater than the notch center frequency, and the bandwidth narrows; the notch center frequency remains unchanged. Based on this, in this embodiment, by limiting the width W S2 of the horizontal branch of the T-shaped slot to be in the range of 2 - 3 mm, and the optimal value to be 2 mm, it can make the impedance in the passband most matched and the isolation at the notch center frequency highest when the antenna ensures the widest passband bandwidth.

[0068] As Figure 11As shown, it is the variation of the miniaturized ultra-wideband antenna provided by this embodiment with the parameter W S3 The variation is as follows. It can be seen that as the vertical branch width W of the T-shaped slot in the sunken ground layer S3 increases, the reflection coefficient of the antenna improves within the passband, and the bandwidth increases; the notch center frequency slightly moves downward, and the isolation at the notch center frequency improves. Based on this, in this embodiment, by limiting the value range of the vertical branch width W of the T-shaped slot S3 to be 11 - 13 mm, and the optimal value to be 11.0 mm, it will be possible to make the impedance in the passband of the antenna most matched when ensuring the widest passband bandwidth and the isolation at the notch center frequency highest.

[0069] As Figure 12 shown, it is the variation of the miniaturized ultra-wideband antenna provided by this embodiment with the parameter L RL The variation is as follows. It can be seen that as the upper base L of the trapezoidal radiation patch in the radiation layer RL increases, the reflection coefficient of the antenna deteriorates within the passband, and the bandwidth narrows; the notch center frequency remains unchanged, and the isolation at the notch center frequency deteriorates. Based on this, in this embodiment, by limiting the value range of the upper base L of the trapezoidal radiation patch RL to be 6.7 - 8.7 mm, and the optimal value to be 6.7 mm, it will be possible to make the impedance in the passband of the antenna most matched when ensuring the widest passband bandwidth and the isolation at the notch center frequency highest.

[0070] As Figure 13 shown, it is the variation of the miniaturized ultra-wideband antenna provided by this embodiment with the parameter W S3 The variation is as follows. It can be seen that as the interval distance D1 between the closed end of the U-shaped notch slot and the feeding point of the microstrip feeder increases, the reflection coefficient of the antenna improves within the passband, and the bandwidth widens; the notch center frequency slightly moves upward, and the isolation at the notch center frequency deteriorates. Based on this, in this embodiment, by limiting the preferred value range of the interval distance D1 between the closed end of the U-shaped notch slot and the feeding point of the microstrip feeder to be 5.3 - 7.4 mm, and the optimal value to be 5.37 mm, it will be possible to make the impedance in the passband of the antenna most matched when ensuring the widest passband bandwidth and the isolation at the notch center frequency highest.

[0071] Based on the above analysis, combined with Figure 4 and Figure 5 , the optimized parameter examples of the miniaturized ultra-wideband antenna provided by this embodiment are as follows:

[0072] L G = 25.0 mm, W G = 24.0 mm, L S1 = 7.1 mm, L S2 = 1.13 mm, L S3 = 8.0 mm,

[0073] L S4 = 5.0 mm, L RL = 6.7 mm, L RR = 9.0 mm, L F = 8.0 mm, W S1 = 0.13 mm, W S2 = 2.0

[0074] mm, W S3 = 13.0 mm, W F = 1.53 mm, h R = 8.0 mm, D1 = 5.37 mm, D2 = 10.6 mm,

[0075] D3 = 8.0 mm.

[0076] As Figure 14 shown, it is the simulation result of the reflection coefficient of the miniaturized ultra-wideband antenna with notch characteristics corresponding to the above optimization parameter example. It can be seen that the bandwidth range where the reflection coefficient of this antenna is less than -10 dB is from 2.98 to 10.44 GHz, the center frequency is 6.71 GHz, the absolute bandwidth is 7.46 GHz, and the relative bandwidth is 111.2%, showing the characteristics of ultra-wideband. At the same time, within the bandwidth range, there is a notch located at 6.11 GHz.

[0077] As Figure 15 shown, it is the simulation result of the gain and radiation efficiency of the miniaturized ultra-wideband antenna with notch characteristics corresponding to the above optimization parameter example. Among them, the arrow indicates which vertical coordinate axis the corresponding curve corresponds to. It can be seen that within the passband, its average maximum gain is 3.76 dBi and the average radiation efficiency is 92.4%, showing the characteristics of high radiation efficiency and high gain; at the center frequency of the notch, there is an in-band suppression of up to 12 dB.

[0078] As Figures 16 - 18 shown, it is the radiation pattern of the miniaturized ultra-wideband antenna with notch characteristics corresponding to the above optimization parameter example. It can be seen that this miniaturized ultra-wideband antenna is an omnidirectional antenna and has high gain.

[0079] Embodiment 3

[0080] This embodiment is further expanded based on Embodiment 1 or Embodiment 2, and provides a communication device including the miniaturized ultra-wideband antenna with notch characteristics in Embodiment 1 or Embodiment 2 above.

[0081] In some specific embodiments, the communication device may be a mobile intelligent terminal device (such as a mobile phone, walkie-talkie, tablet, etc.), or may also be other devices that need to use an antenna to meet wireless communication requirements.

[0082] The communication device provided in this embodiment, by equipping with the miniaturized ultra-wideband antenna with notch characteristics provided in Embodiment 1 or Embodiment 2, making use of its ultra-wideband, omnidirectional and high-gain antenna performance and the characteristics of miniaturization, and at the same time, also having the characteristic of effectively suppressing in-band interference, will be able to significantly improve the wireless communication performance of the communication device.

[0083] The above are only the embodiments of the present utility model, and do not limit the patent scope of the present utility model accordingly. All equivalent transformations made by using the content of the specification and drawings of the present utility model, or directly or indirectly applied in the relevant technical fields, are equally included in the patent protection scope of the present utility model.

Claims

1. A miniaturized ultra-wideband antenna with notch characteristics, characterized in that: It comprises a radiation layer, a dielectric layer and a recessed stratum which are stacked in sequence; the radiation layer comprises a trapezoidal radiation patch, a microstrip feeder and a notch slot; one end of the microstrip feeder is connected to the upper bottom of the trapezoidal radiation patch; the notch slot is arranged at the connection between the trapezoidal radiation patch and the microstrip feeder; a T-shaped slot is provided on the recessed stratum; and the vertical branch of the T-shaped slot corresponds to the trapezoidal radiation patch.

2. The miniaturized ultra-wideband antenna with notch characteristics as claimed in claim 1, characterized in that: The notch gap is a U-shaped gap.

3. The miniaturized ultra-wideband antenna with notch characteristics as claimed in claim 2, characterized in that: The opening of the U-shaped slot faces the trapezoidal radiation patch.

4. The miniaturized ultra-wideband antenna with notch characteristics as claimed in claim 2, characterized in that: The U-shaped slot is a long strip of U-shaped slot; the length direction of the long strip of U-shaped slot is consistent with the length direction of the microstrip feed line.

5. The miniaturized ultra-wideband antenna with notch characteristics as claimed in claim 4, characterized in that: A preset distance D1 is provided between one end of the U-shaped slot of the long strip, which is away from the opening, and the feeding point of the microstrip feed line.

6. The miniaturized ultra-wideband antenna with notch characteristics as claimed in claim 5, characterized in that: The length of the U-shaped gap ranges from 6.1 to 8.1 mm, and the width ranges from 0.7 to 1.2 mm; the distance D1 ranges from 5.3 to 7.4 mm.

7. The miniaturized ultra-wideband antenna with notch characteristics as claimed in claim 1, characterized in that: The transverse branch of the T-shaped slot is parallel to the microstrip feed line.

8. The miniaturized ultra-wideband antenna with notch characteristics as claimed in claim 7, characterized in that: The transverse branch is located at the edge of the depressed stratum; the width of the transverse branch ranges from 2 to 3 mm.

9. The miniaturized ultra-wideband antenna with notch characteristics as claimed in claim 7, characterized in that: The length of the vertical branch of the T-shaped slot is in the range of 7-9 mm, and the width is in the range of 11-13 mm; the distance between the vertical branch and the end of the horizontal branch of the T-shaped slot away from the microstrip feeder is in the range of 3-5.0 mm.

10. A communication device, characterized in that: A miniaturized ultra-wideband antenna with notch characteristics comprising any one of claims 1 to 9.

Images