Single-wire PWM non-H-bridge high-power TEC drive circuit
By designing a single-line PWM non-H-bridge high-power TEC driving circuit, the MCU unit and SIC620 chip are combined to directly drive the refrigeration plate, solving the problems of low switching frequency, large size and high cost of the existing TEC driving circuit, and achieving efficient and low-cost high-power TEC driving.
Patent Information
- Application Number
- CN202422313244.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-23
- Publication Date
- 2025-06-27
- Estimated Expiration
- 2034-09-23
AI Technical Summary
The existing TEC driving circuits often use the H-bridge principle, which leads to low switching frequency, large volume and high cost, making it difficult to meet the needs of efficiently driving high-power TECs.
A single-line PWM non-H-bridge high-power TEC driving circuit is designed, using a combination of MCU unit and SIC620 chip, controlling the PWM duty cycle through the PID algorithm, and directly driving the refrigeration plate, breaking the traditional H-bridge structure.
High-power TEC drive with high switching frequency, small size and low cost is realized, meeting the needs of efficient driving and reducing system costs.
Smart Images
Figure CN223038325U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of lasers, in particular to a single-line PWM non-H-bridge high-power TEC drive circuit. Background Art
[0002] As lasers are widely used in industry, medicine, commerce, scientific research, and military, people's technical requirements for lasers are getting higher and higher. A good laser is inseparable from a good laser driver circuit. In the laser driver circuit, what is often concerned is whether the driver circuit can output a constant current and temperature. Controlling the laser temperature in the laser driver board is to ensure the stability of laser performance, extend the service life, improve system safety and reliability, and meet specific application requirements.
[0003] Compared with the conversion of heating and cooling working modes of refrigerators by motor-specific chips or TEC-specific driver chips commonly used in the market, these chips are driven by the principle of H-bridge internally, which has slow speed and poor driving ability.
[0004] Therefore, a single-line PWM non-H-bridge high-power TEC drive circuit is proposed. Summary of the invention
[0005] The purpose of the utility model is to provide a single-line PWM non-H-bridge high-power TEC drive circuit to solve the problems raised in the above background technology.
[0006] To achieve the above-mentioned purpose, the utility model provides the following technical solutions: a single-line PWM non-H-bridge high-power TEC drive circuit, comprising an MCU unit, one side of the MCU unit is connected to an NTC thermistor ceramic component for collecting the temperature of the device, the other side of the MCU unit is connected to two SIC620 chips, an inverter is connected between one of the SIC620 chips and the MCU unit, and the two SIC620 chips are connected to cooling sheets for controlling the temperature of the device.
[0007] Preferably, the SIC620 chip includes a DrMOS transistor Q1 and a DrMOS transistor Q2, and the gates of the DrMOS transistor Q1 and the DrMOS transistor Q2 are connected to the MCU unit.
[0008] Preferably, the drain of the DrMOS transistor Q2 is connected to the source of the DrMOS transistor Q1 and is connected to a cooling plate.
[0009] Preferably: the source of the DrMOS tube Q2 is grounded.
[0010] Preferably: both of the two SIC620 chips are connected with a bootstrap capacitor.
[0011] Compared with the prior art, the beneficial effects of the present utility model are as follows: The TEC drive designed by breaking the conventional H-bridge principle has a high switching frequency, can use a small inductor, is small in size, realizes a high-power TEC drive, is cheap in price, and reduces costs. BRIEF DESCRIPTION OF THE DRAWINGS
[0012] Figure 1 is the circuit diagram of the present utility model. DETAILED DESCRIPTION OF THE EMBODIMENTS
[0013] The technical solutions in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model.
[0014] Embodiment
[0015] Please refer to Figure 1 , the present utility model provides a technical solution: a single-line PWM non-H-bridge high-power TEC drive circuit, including an MCU unit, on one side of the MCU unit is connected an NTC thermistor ceramic component for collecting the temperature of the device. The temperature of the device is collected by the NTC and the collected value is sent to the single-chip microcomputer. When the collected value is the same as the temperature value set by the user (corresponding to the resistance value and voltage value of the NTC at this temperature), the PWM outputs a duty cycle of 50%.
[0016] On the other side of the MCU unit are connected two SIC620 chips, and bootstrap capacitors are connected to both of the two SIC620 chips. An inverter is connected between one of the SIC620 chips and the MCU unit, and a thermoelectric cooler for controlling the temperature of the device is connected to the two SIC620 chips.
[0017] When there is a difference between the set value and the measured value, the MCU unit will use the PID algorithm to control the PWM of the output duty cycle. One path is through the PWM to a SIC620 chip. When the input is high level, Q1 conducts and outputs high level; when the input is low level, Q2 conducts and outputs low level.
[0018] Then the PWM is sent to the inverter to form -PWM to another SIC620 chip. When the input is high level, Q3 conducts and outputs high level; when the input is low level, Q4 conducts and outputs low level.
[0019] Such as Figure 1As shown: The SIC620 chip includes DrMOS transistor Q1 and DrMOS transistor Q2. The gates of DrMOS transistor Q1 and DrMOS transistor Q2 are connected to the MCU unit. The drain of DrMOS transistor Q2 is connected to the source of DrMOS transistor Q1 and is connected to the thermoelectric cooler. The source of DrMOS transistor Q2 is grounded. The difference is taken for the product of the duty cycle of the high level in the output VOUT1 and VOUT2 within one cycle and the voltage value corresponding to the user-set temperature. When this difference is positive, the thermoelectric cooler cools; when the difference is negative, the thermoelectric cooler heats up.
[0020] Working principle: The user sets the temperature they want, and according to this temperature, there is a corresponding voltage value. Then, the current temperature of the device is collected through a temperature sensor (AD conversion) and compared with the set voltage. The difference obtained from the comparison is controlled by a PID algorithm, and then PWM with different duty cycles is output. The PWM is output through two DrMOS transistors, and then the PWM is inverted to convert the low level into a high level and output through two DrMOS transistors. The pressure difference formed by the duty cycle of the high level in the two-way output is used to drive the heating and cooling of the thermoelectric cooler.
[0021] Although the embodiments of the present invention have been shown and described, for those of ordinary skill in the art, it can be understood that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and spirit of the present invention. The scope of the present invention is defined by the appended claims and their equivalents.
Claims
1. A single-line PWM non-H-bridge high-power TEC drive circuit, including an MCU unit, characterized in that: One side of the MCU unit is connected to an NTC thermistor ceramic component for collecting the device temperature, and the other side of the MCU unit is connected to two SIC620 chips. An inverter is connected between one of the SIC620 chips and the MCU unit, and the two SIC620 chips are connected to cooling plates for controlling the device temperature.
2. A single-line PWM non-H-bridge high-power TEC drive circuit according to claim 1, characterized in that: The SIC620 chip includes a DrMOS transistor Q1 and a DrMOS transistor Q2, and the gates of the DrMOS transistor Q1 and the DrMOS transistor Q2 are connected to the MCU unit.
3. A single-line PWM non-H-bridge high-power TEC drive circuit according to claim 2, characterized in that: The drain of the DrMOS transistor Q2 is connected to the source of the DrMOS transistor Q1 and is also connected to the cooling plate.
4. The single-line PWM non-H-bridge high-power TEC drive circuit according to claim 3, characterized in that: The source of the DrMOS transistor Q2 is grounded.
5. The single-line PWM non-H-bridge high-power TEC drive circuit according to claim 1, characterized in that: Both of the two SIC620 chips are connected with bootstrap capacitors.