Horizontal device of integrated field plate structure
Through the design of integrated field plate structure and voltage divider component group, the problem of uneven electric field distribution in horizontal devices is solved, the performance and reliability of the device are improved, and the design of higher density integrated circuits is supported.
Patent Information
- Application Number
- CN202421912127.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-08
- Publication Date
- 2025-07-11
- Estimated Expiration
- 2034-08-08
AI Technical Summary
In existing horizontal devices, the uniformity of the electric field distribution in the channel region between the drain and the source is limited, which affects the stability and reliability of the device.
The integrated field plate structure and voltage divider element group design are adopted, and the electric potential on the field plate is controlled by the voltage divider element group to achieve uniform distribution of the electric field and avoid charge accumulation.
It achieves higher electric field uniformity and stability of device performance, reduces device area, and supports higher density integrated circuit designs.
Smart Images
Figure CN223094111U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the technical field of semiconductor devices, and particularly to a horizontal device with an integrated field plate structure. Background Art
[0002] Horizontal devices are a type of device with a lateral structure in semiconductor technology, opposite to vertical devices (longitudinal structures). Horizontal devices typically have the characteristics that the source, drain, and gate are on the same plane, and are widely used in various electronic and power applications.
[0003] Field plates can be used in horizontal devices to make the electric field distribution more uniform in the off state of the device and increase the breakdown voltage. However, in existing horizontal devices, the plate structure requires multiple depositions and etching of dielectrics and metals, and the process requires more photolithography. Therefore, it is difficult to increase the number of field plates in the existing horizontal device structure, and the uniformity of the electric field distribution in the channel region between the drain and the source is limited, which affects the stability and reliability of the horizontal device. Therefore, there is an urgent need for a horizontal device with a field plate group to solve the above technical problems. Summary of the Utility Model
[0004] This application provides a horizontal device with an integrated field plate structure, which solves the problem of limited uniformity of the electric field distribution in the channel region between the drain and the source of the existing horizontal device.
[0005] To achieve the above object, this application is implemented through the following technical solutions:
[0006] This application provides a horizontal device with an integrated field plate structure, including:
[0007] A substrate;
[0008] A heterojunction layer disposed on one side surface of the substrate;
[0009] A dielectric material layer disposed on the side surface of the heterojunction layer away from the substrate, and a gate, a source, and a drain are provided in the dielectric material layer;
[0010] A field plate group including N field plates, and each of the field plates is disposed on the side surface of the dielectric material layer away from the heterojunction layer; N is a positive integer;
[0011] A voltage dividing element group, the voltage dividing element group is electrically connected to the field plates in the field plate group so that the difference between the potential distribution of the field plate group and the channel potential conforms to the local threshold.
[0012] In an embodiment of this application, the voltage dividing element includes a plurality of voltage dividing capacitors and a plurality of voltage dividing resistors. The plurality of voltage dividing resistors are respectively connected to adjacent field plates to remove the charges accumulated on each of the field plates; a voltage dividing capacitor is connected in parallel to each of the voltage dividing resistors for adjusting the potential on the field plate.
[0013] In one embodiment of the present application, the voltage dividing element further includes a source resistor, a source capacitor, a drain resistor, and a drain capacitor;
[0014] The source and the nearest electrode plate are electrically connected through the source resistor, and the source capacitor is connected in parallel with the source resistor; the drain and the nearest electrode plate are electrically connected through the drain resistor, and the drain capacitor is connected in parallel with the drain resistor.
[0015] In one embodiment of the present application, the capacitance value of each voltage dividing capacitor is greater than the corresponding field plate-channel capacitance value;
[0016] The resistance value of each voltage dividing resistor is an equal proportion value of the impedance of the voltage dividing capacitor connected in parallel with it.
[0017] In one embodiment of the present application, the substrate, the heterojunction layer, the dielectric material layer, and the field plate group are encapsulated into a first encapsulation module, and each field plate is connected to a pin outside the first encapsulation module, so that each field plate is electrically connected to its corresponding voltage dividing capacitor and voltage dividing resistor.
[0018] In one embodiment of the present application, the substrate, the heterojunction layer, the dielectric material layer, the field plate group encapsulation, and the voltage dividing element group are encapsulated into a second encapsulation structure, and independent source pins, gate pins, and drain pins are provided outside the second encapsulation structure, and are respectively connected in one-to-one correspondence with the gate, source, and drain provided in the dielectric material layer.
[0019] In one embodiment of the present application, the voltage dividing resistor is a strip-shaped metal, strip-shaped polysilicon, or strip-shaped 2DEG.
[0020] In one embodiment of the present application, the horizontal device is a high electron mobility transistor.
[0021] In one embodiment of the present application, the value of N is not greater than 20 and not less than 2.
[0022] In one embodiment of the present application, the horizontal device is a high electron mobility transistor.
[0023] In one embodiment of the present application, the horizontal device is a GaN HEMT, and its gate is a MIS structure or a pGaN structure.
[0024] Compared with the prior art, a horizontal device with an integrated field plate structure provided by the present application controls the electric potential on the field plate through a voltage-dividing element group, achieving a more uniform electric field distribution. At the same time, the problem of charge accumulation on the field plate is avoided, reducing the instability of device performance. Due to the more uniform electric potential distribution, the lateral gate length (LGD) can be shortened without sacrificing performance, reducing the device area, which helps to achieve a higher-density integrated circuit design. The design of the voltage-dividing element group provides flexibility in adjusting the electric potential of the field plate, and the performance of the device can be customized according to different application requirements.
[0025] In summary, through the design of the integrated field plate structure and the voltage-dividing element group in the present application, the field plate in the horizontal device can approach the ideal field plate, solving the problem of limited uniformity of the electric field distribution in the channel region between the drain and the source of the existing horizontal device, and achieving a high-performance and high-reliability horizontal device. BRIEF DESCRIPTION OF THE DRAWINGS
[0026] Figure 1 FIG. 9 shows a schematic structural diagram of a field plate structure provided by the related art.
[0027] Figure 2 FIG. 13 shows a schematic structural diagram of another field plate structure provided by the related art.
[0028] Figure 3 FIG. 17 shows a schematic structural diagram of a field plate structure provided by an embodiment of the present application.
[0029] Figure 4 FIG. 21 shows a schematic diagram of the connection of the field plate of a field plate structure provided by an embodiment of the present application.
[0030] Figure 5 FIG. 25 shows a schematic diagram of an implementation manner of a field plate structure provided by an embodiment of the present application.
[0031] Figure 6 FIG. 29 shows a schematic diagram of an implementation manner of a voltage-dividing resistor provided by an embodiment of the present application.
[0032] Figure 7 FIG. 33 shows a schematic diagram of the combination of a voltage-dividing capacitor structure and a field plate structure provided by an embodiment of the present application.
[0033] Figure 8 FIG. 37 shows a schematic diagram of the electric potential distribution of the channel between the source and the drain of the horizontal device and different field plate structures. DETAILED DESCRIPTION OF THE EMBODIMENTS
[0034] To facilitate the understanding of the present application, the present application will be described more comprehensively below with reference to the relevant drawings. Preferred embodiments of the present application are shown in the drawings. However, the present application can be implemented in many other different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the understanding of the disclosure of the present application more thorough and comprehensive.
[0035] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the technical field to which the present application belongs. The terms used in the specification of the present application herein are only for the purpose of describing specific embodiments and are not intended to limit the present application. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.
[0036] In the related art, taking GaN HEMT as an example, a commonly used field plate structure is as shown in the attached Figure 1 figure. Dielectrics is a dielectric material layer, FP1 and FP2 are field plates in the field plate structure, S, G, and D are the gate, source, and drain respectively, and the heterojunction layer is, for example, A1GaN / GaN. Implementing this structure requires multiple depositions and etchings of dielectrics and metals, and more lithography is required in the process, so it is difficult to increase the number of field plates, and the uniformity of the electric field distribution is limited.
[0037] In the related art, a floating field plate structure as shown in the attached Figure 2 figure is also proposed. Compared with the structure described in the attached Figure 1 figure, the processing is somewhat simpler. However, since the floating field plate is a conductive structure that is not directly connected to any fixed potential point. Since they are floating and have no clear potential reference, they are prone to accumulating or losing charges according to the operating conditions of the device and the surrounding environment. Therefore, charges are likely to accumulate on the field plate (the arrow indicator in the attached Figure 1 figure), which affects the normal operation of the device, and the stability and reliability are not ideal; moreover, the electric field is difficult to control, and a relatively high electric field is likely to be generated on the drain side.
[0038] Obviously, the field plate structures in the related art do not solve the defect that the stability and reliability are not ideal. In view of the problems existing in the above-mentioned related art, the present application proposes a horizontal device with an integrated field plate structure.
[0039] See Figure 3 , the horizontal device with an integrated field plate structure provided by the present application (hereinafter referred to as the device) includes a substrate, a heterojunction layer (such as AlGaN / GaN), a dielectric material layer (Dielectrics), a field plate group, and a voltage dividing element group (not shown).
[0040] The heterojunction layer is disposed on one side surface of the substrate;
[0041] A dielectric material layer is disposed on a side of the heterojunction layer away from the substrate, and a gate, a source, and a drain are provided in the dielectric material layer;
[0042] The field plate group includes N field plates (FP1, FP2......FPN), and each of the field plates is disposed on a side of the dielectric material layer away from the heterojunction layer; N is a positive integer;
[0043] The voltage dividing element group is electrically connected to the field plates in the field plate group, so that the difference between the potential distribution of the field plate group and the channel potential meets the local threshold. Wherein, the potentials on the field plates are V1, V2 to VN respectively.
[0044] This technical solution proposes a horizontal device. By integrating a field plate structure, the electric field distribution is optimized, and the performance and reliability of the device are improved. Among them, the heterojunction layer is disposed on one side of the substrate and is responsible for forming a channel and a two-dimensional electron gas. The field plate group is composed of multiple field plates and is disposed on the other side of the dielectric material layer, away from the heterojunction layer. The role of the field plate is to affect the potential of the channel through capacitive coupling to achieve a uniform distribution of the electric field. The voltage dividing element group is electrically connected to the field plate group. By controlling the potential on the field plate, it is ensured that a stable potential difference is formed between the field plate and the channel, meeting the requirements of the local threshold. The capacitive coupling between the field plate and the channel turns off the channel in sequence by controlling the potential of the channel when the device is turned off, so as to withstand voltage in the horizontal direction. Ideally, the electric field in the channel is uniform and the potential changes linearly. This technical solution realizes the optimized control of the potential on the field plate through the voltage dividing element group, ensuring that the difference between the potential distribution of the field plate group and the channel potential meets the local threshold.
[0045] Thus, by controlling the potential on the field plate through the voltage dividing element group, a more uniform electric field distribution is achieved, while avoiding the problem of charge accumulation on the field plate and reducing the instability of the device performance. Since the potential distribution is more uniform, the lateral gate length (LGD) can be shortened without sacrificing performance, the device area can be reduced, which is helpful for realizing a higher density integrated circuit design. The design of the voltage dividing element group provides flexibility in adjusting the potential of the field plate, and the performance of the device can be customized according to different application requirements.
[0046] In summary, through the design of integrating the field plate structure and the voltage dividing element group, the field plate in the horizontal device can approach the ideal field plate, solving the problem of limited uniformity of the electric field distribution in the channel region between the drain and the source of the existing horizontal device, and realizing a high-performance and high-reliability horizontal device.
[0047] In some embodiments, refer to Figure 4, the voltage dividing element includes a plurality of voltage dividing capacitors (C1......CN) and a plurality of voltage dividing resistors (R1......RN). The plurality of voltage dividing resistors are respectively connected to adjacent field plates to remove the charges accumulated on each field plate; a voltage dividing capacitor is connected in parallel with each voltage dividing resistor to adjust the electric potential (V1, V2......VN-1, VN) on the field plate. Cc1 to CcN are the capacitors between the field plate and the underlying channel (Channel). By selecting appropriate voltage dividing capacitors C1 to CN, during the device switching transient, voltage division can be directly performed between the source and the drain through the voltage dividing capacitors; by selecting different voltage dividing capacitors, the distribution of the electric potential on the field plate can be controlled; by using the voltage dividing resistors R1-RN to connect, the charges accumulated on the field plate can be effectively removed; it can be considered that under static conditions, the electric potential on the field plate is determined by the voltage dividing resistors. Therefore, the selection of the resistance value and the selection of the voltage dividing capacitor are matched to ensure that the voltage distributions under dynamic and static conditions are close.
[0048] Specifically, the voltage dividing element is composed of a plurality of voltage dividing capacitors and a plurality of voltage dividing resistors, and the above elements work together to optimize the electric potential distribution of the field plate. Specifically, the plurality of voltage dividing resistors are respectively connected to adjacent field plates, and their function is to provide a path to remove the charges that may accumulate on the field plates, preventing electric field distortion and device performance degradation caused by charge accumulation. A voltage dividing capacitor is connected in parallel with each voltage dividing resistor, which not only helps to remove the accumulated charges, but also can store and release charges during the switching transient, thereby adjusting the electric potential on the field plate. The voltage dividing capacitor divides the voltage between the source and the drain through capacitive coupling, ensuring that the electric potential on the field plate is lower than the channel electric potential while meeting the requirements of the local threshold. It can be considered that under static conditions, the electric potential on the field plate is mainly determined by the parallel-connected voltage dividing resistors; while under dynamic conditions, the voltage dividing capacitor can adjust the voltage, thereby ensuring the consistency of the voltage distribution under different operating states.
[0049] In some embodiments, the voltage dividing element further includes a source resistor (Rs), a source capacitor (Cs), a drain resistor (Rd), and a drain capacitor (Cd);
[0050] The source is electrically connected to the nearest plate through the source resistor, and the source capacitor is connected in parallel with the source resistor; the drain is electrically connected to the nearest plate through the drain resistor, and the drain capacitor is connected in parallel with the drain resistor. VS represents the source voltage, VD represents the drain voltage, and VDS represents the drain-source voltage.
[0051] The source is electrically connected to the nearest plate through the source resistor, and the drain is electrically connected to the nearest plate through the drain resistor, which helps to control the electric potential of the source and the drain and reduce charge accumulation.
[0052] In some embodiments, the capacitance value of each voltage dividing capacitor is greater than the capacitance value of its corresponding field plate-channel capacitor.
[0053] The resistance value of each voltage-dividing resistor is an equal-proportion value of the impedance of the voltage-dividing capacitor connected in parallel with it.
[0054] The capacitance value of each voltage-dividing capacitor is set to be greater than the corresponding field plate-channel capacitance value to achieve a specific voltage distribution and charge storage capacity. At the same time, the resistance value of the voltage-dividing resistor can be set to an equal-proportion value of the impedance of the voltage-dividing capacitor connected in parallel with it. At a specific operating frequency, the combination of the resistor and the capacitor will provide the required voltage division and time constant to achieve dynamic voltage regulation. The equal-proportion value means that the ratio between the two is a non-zero constant, such as 2, 3, or 4.
[0055] Thus, by setting specific values of the voltage-dividing capacitors, a more uniform and optimized electric field distribution can be achieved, improving the performance and breakdown voltage capability of the device (i.e., the horizontal device).
[0056] In a specific application, the network composed of the voltage-dividing resistors and voltage-dividing capacitors used in this application enables the voltage on the field plate to reach the optimum at a given voltage. By selecting appropriate voltage-dividing capacitors (C1 - CN), the voltage of each field plate can be made lower than the voltage of the lower channel, and the difference can be freely selected as needed. At the same time, the magnitude of the capacitance value of the voltage-dividing capacitor can consider the capacitance (Cc1 - CcN) between the field plate and the channel; if the capacitance value of C1 - CN is selected to be smaller than Cc1 - CcN, the field plate potentials V1 - VN will be more greatly disturbed by Cc1 - CcN; if the capacitance value is selected to be too large, the overall output capacitance COSS of the device will increase, possibly increasing the switching loss. For example, if the application scenario is soft switching, the loss caused by COSS (the equivalent capacitance value presented when the drain and source of the device are connected to the external circuit) can be ignored, and a value 100 times Cc1 - CcN can be considered for selection.
[0057] The resistance values of resistors R1 - RN are selected in equal proportion according to the impedance of the capacitor. According to the operating voltage of the device, if the operating voltage of the device is relatively high, such as 900V, the total resistance of R1 - RN can be selected to be in the megohm or higher range to reduce the overall leakage current of the device.
[0058] In some embodiments, refer to Figure 5, the substrate, the heterojunction layer, the dielectric material layer, and the field plate group are encapsulated into a first encapsulation module. Each field plate is connected to pins (P1, P2 to PN) outside the first encapsulation module, so that each field plate is electrically connected to its corresponding voltage-dividing capacitor and voltage-dividing resistor. By selecting the value of the voltage-dividing capacitor, during the device switching process, the voltage-dividing capacitor can quickly respond to voltage changes and work together with the voltage-dividing resistor to achieve dynamic regulation of the field plate potential. Similarly, independent source pins (PS), gate pins (PG), and drain pins (PD) are provided outside the first encapsulation structure, and are respectively connected to the gate, source, and drain provided in the dielectric material layer in one-to-one correspondence.
[0059] The substrate, the heterojunction layer, the dielectric material layer, and the field plate group are combined and encapsulated into a first encapsulation module, which simplifies the device structure and facilitates integration and assembly. Each field plate is connected to a pin outside the first encapsulation module through a conductive connection, ensuring that the field plate can be electrically connected to external circuit components (such as voltage-dividing capacitors and voltage-dividing resistors). According to the selected value, the voltage-dividing capacitor can quickly respond to voltage changes during the device switching process, and thus work together with the voltage-dividing resistor to achieve dynamic regulation of the field plate potential.
[0060] In some embodiments, the substrate, the heterojunction layer, the dielectric material layer, the field plate group encapsulation, and the voltage-dividing element group are encapsulated into a second encapsulation structure. Independent source pins, gate pins, and drain pins are provided outside the second encapsulation structure, and are respectively connected to the gate, source, and drain provided in the dielectric material layer in one-to-one correspondence. The voltage-dividing capacitor can be in different regions on the packaged chip or above the field plate.
[0061] The substrate, the heterojunction layer, the dielectric material layer, the field plate group, and the voltage-dividing element group are combined into a second encapsulation structure after encapsulation, which is beneficial to improving the reliability and performance of the device. Independent source pins, gate pins, and drain pins are provided outside the second encapsulation structure, and are respectively connected to the corresponding electrodes in the dielectric material layer in one-to-one correspondence, ensuring the corresponding electrical connection. During the device switching process, the voltage-dividing capacitor can quickly respond to voltage changes and work together with the voltage-dividing resistor to achieve dynamic regulation of the field plate potential. Through integrated encapsulation, the need for external connections is reduced, which helps to achieve higher-density integrated circuit design.
[0062] In some embodiments, the voltage-dividing resistor is a strip-shaped metal, strip-shaped polysilicon, or strip-shaped 2DEG.
[0063] When the substrate, the heterojunction layer, the dielectric material layer, the field plate group package, and the voltage dividing element group package form a second package structure, the voltage dividing resistor is a strip-shaped metal, strip-shaped polysilicon, or strip-shaped 2DEG. Using strip-shaped metal, strip-shaped polysilicon, or 2DEG (two-dimensional electron gas) as the voltage dividing resistor helps reduce the influence of parasitic inductance and capacitance, thereby reducing the impact of parasitic effects on device performance. The above design method is compatible with existing device processing technologies, which helps simplify the manufacturing process.
[0064] As an example, refer to Figure 6 , Figure 6 which shows a schematic diagram of an implementation manner of a voltage dividing resistor provided by an embodiment of the present application. The voltage dividing resistor can be implemented by strip-shaped metal or strip-shaped polysilicon.
[0065] As an example, refer to Figure 7 , Figure 7 which shows a schematic diagram of the combination of a voltage dividing capacitor structure and a field plate structure provided by an embodiment of the present application. The voltage dividing capacitor is implemented by metals in different layers (the metals are M1, M2, M3, M4, and their corresponding field plates). It can be considered that the capacitance value of the voltage dividing capacitor is proportional to the overlapping area between the metal and the corresponding field plate and inversely proportional to the dielectric thickness between the metal and the corresponding field plate.
[0066] Similarly, the source capacitance (Cs) and the drain capacitance (Cd) are also respectively implemented by metals in different layers (M1 and S, M4 and D).
[0067] In some embodiments, the horizontal device is a high electron mobility transistor (HEMT). Compared with the traditional metal oxide semiconductor field effect transistor (MOSFET), HEMT has a higher electron mobility, making it perform excellently in high-frequency and high-speed electronic applications.
[0068] In some embodiments, the horizontal device is a GaN HEMT, and its gate is a MIS structure or a pGaN structure. When the gate adopts a MIS (metal-insulator-semiconductor) structure or a pGaN (p-type doped gallium nitride) structure, the MIS structure can reduce the gate leakage current by introducing an insulating layer between the metal gate and the semiconductor, improving the reliability and stability of the horizontal device; the pGaN structure, due to its high thermal conductivity, helps to more effectively dissipate the heat generated during the operation of the device, thereby improving the stability of the horizontal device.
[0069] In some embodiments, the value of N is not greater than 20 and not less than 2. When the value of N is not less than 2, it can meet general requirements, and the upper limit of 20 mainly takes into account the limitations of the LGD size and the process line width.
[0070] The present application provides a horizontal device. By integrating a field plate structure, the electric field distribution is optimized, and the performance and reliability of the device are improved. Among them, the heterojunction layer is disposed on one side of the substrate and is responsible for forming a channel and a two-dimensional electron gas. The field plate group is composed of multiple field plates and is disposed on the other side of the dielectric material layer, away from the heterojunction layer. The role of the field plate is to affect the potential of the channel through capacitive coupling to achieve a uniform distribution of the electric field. The voltage dividing element group is electrically connected to the field plate group. By controlling the potential on the field plate, a stable potential difference is ensured between the field plate and the channel to meet the local threshold requirements. The capacitive coupling between the field plate and the channel, when the device is turned off, turns off the channel by controlling the potential of the channel in sequence, so as to withstand the voltage in the horizontal direction. Ideally, the electric field in the channel is uniform and the potential changes linearly. This technical solution realizes the optimized control of the potential on the field plate through the voltage dividing element group, ensuring that the potential distribution of the field plate group and the potential difference of the channel potential meet the local threshold.
[0071] Among them, the device off state means that the device is non-conductive and the current is almost zero. In a field effect transistor (FET), this usually means that the gate voltage (Vg) is lower than the threshold voltage (Vth), resulting in no conductive path formed in the channel region. The device on state means that the device is conductive and current can flow between the source and the drain.
[0072] See Figure 8 , Figure 8 shows a schematic diagram of the potential distribution of the channel between the source and the drain of the horizontal device and different field plate structures. Among them, the potential distribution corresponding to Channel (channel) depends on the gate voltage and the source-drain voltage. The ideal channel potential (channel) distribution is linear. It can be assumed that the number of field plates is large and the length is small, so a continuous straight line is used for illustration.
[0073] The potential distribution corresponding to Target FP (ideal field plate) refers to the ideal or expected field plate structure in the design, which is used to optimize the potential distribution. Its voltage is lower than that of the channel by a certain amount. In the off state, the electric field in the channel is evenly distributed; usually, the source field plate (SFP) and the gate field plate (GFP) are used more. Since the potential difference between the field plate and the channel is getting larger and larger, it is necessary to continuously thicken the dielectric under the field plate. The potential distribution corresponding to the source-side floating field plate (floating SSFP) / drain-side floating field plate (floating DSFP). Since the potential on the field plate is difficult to control, it usually only works on the source side / drain side respectively and generates a strong electric field on the drain side / source side respectively. The potential distribution corresponding to Practical FP (actual field plate) refers to the potential distribution of the horizontal device provided by the present application, which proves that it is closer to the ideal field plate structure.
[0074] The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope described in this specification.
[0075] The above-described embodiments merely represent several implementation manners of the present application. The description is relatively specific and detailed, but it should not be construed as a limitation to the scope of the patent application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several modifications and improvements can still be made, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the appended claims.
Claims
1. A horizontal device with an integrated field plate structure, characterized in that, Comprising: Substrate; Heterojunction layer, disposed on one side of the substrate; Dielectric material layer, disposed on the side of the heterojunction layer away from the substrate, and a gate, a source, and a drain are provided in the dielectric material layer; Field plate group, including N field plates, each of the field plates is disposed on the side of the dielectric material layer away from the heterojunction layer; N is a positive integer; Voltage dividing element group, the voltage dividing element group is electrically connected to the field plates in the field plate group, so that the difference between the potential distribution of the field plate group and the channel potential conforms to the local threshold.
2. The horizontal device with an integrated field plate structure according to claim 1, wherein The voltage dividing element includes a plurality of voltage dividing capacitors and a plurality of voltage dividing resistors, and the plurality of voltage dividing resistors are respectively connected to adjacent field plates to remove the charges accumulated on each of the field plates; a voltage dividing capacitor is connected in parallel with each of the voltage dividing resistors for adjusting the potential on the field plate.
3. The horizontal device with an integrated field plate structure according to claim 2, characterized in that, The voltage dividing element further includes a source resistor, a source capacitor, a drain resistor, and a drain capacitor; The source is electrically connected to the nearest plate through the source resistor, and the source capacitor is connected in parallel with the source resistor; the drain is electrically connected to the nearest plate through the drain resistor, and the drain capacitor is connected in parallel with the drain resistor.
4. The horizontal device with an integrated field plate structure according to claim 2, wherein The capacitance value of each of the voltage dividing capacitors is greater than the capacitance value of its corresponding field plate-channel capacitor; The resistance value of each of the voltage dividing resistors is an equal proportional value of the impedance of the voltage dividing capacitor connected in parallel therewith.
5. The horizontal device with an integrated field plate structure according to claim 3, wherein The voltage dividing resistor is a strip-shaped metal, strip-shaped polysilicon, or strip-shaped 2DEG.
6. The horizontal device with an integrated field plate structure according to claim 2, characterized in that, The substrate, the heterojunction layer, the dielectric material layer, and the field plate group are encapsulated into a first encapsulation module, and each of the field plates is connected to a pin outside the first encapsulation module, so that each of the field plates is electrically connected to its corresponding voltage dividing capacitor and voltage dividing resistor.
7. The horizontal device with an integrated field plate structure according to claim 1, characterized in that, The substrate, the heterojunction layer, the dielectric material layer, the field plate group encapsulation, and the voltage dividing element group encapsulation are encapsulated into a second encapsulation structure, and independent source pins, gate pins, and drain pins are provided outside the second encapsulation structure, and are respectively connected to the gate, source, and drain provided in the dielectric material layer in one-to-one correspondence.
8. The horizontal device with an integrated field plate structure according to claim 1, wherein, The value of N is not greater than 20 and not less than 2.
9. The horizontal device with an integrated field plate structure according to claim 1, characterized in that, The horizontal device is a high electron mobility transistor.
10. The horizontal device with an integrated field plate structure according to claim 9, characterized in that, The horizontal device is a GaNHEMT, and its gate is a MIS structure or a pGaN structure.