Switching device with controllable conduction speed

Abstract

The utility model discloses a switching device with a controllable conduction speed. The switching device comprises a grid electrode end, a source electrode end, a drain electrode end, a low-voltage enhanced field effect transistor, a high-voltage field effect transistor and a speed control unit. Wherein the speed control unit comprises a device conduction channel and a device turn-off channel, and a conduction constant current source is arranged on the device conduction channel so as to control the conduction speed of the low-voltage enhanced field effect transistor. According to the scheme, the conduction constant current source is arranged on the device conduction channel, the conduction constant current source can effectively control the magnitude of current when the switching device is conducted, and then the conduction speed of the low-voltage enhanced field effect transistor is controlled.

Description

Technical Field

[0002] The utility model belongs to the technical field of semiconductor manufacturing, and particularly relates to a switching device with controllable conduction speed.

Background Art

[0004] The common-source and common-gate cascaded enhancement-type switching device 10 is composed of a low-voltage Si-MOSFET 11 and a high-voltage depletion-mode gallium nitride HEMT 12 in a common-source and common-gate manner. Among them, the drain 122 of the high-voltage depletion-mode gallium nitride HEMT 12 is the drain 102 of the cascaded structure, the gate 111 of the low-voltage Si-MOSFET 11 is used as the gate 101 of the cascaded structure, the source 123 of the high-voltage depletion-mode gallium nitride HEMT 12 is connected to the drain 112 of the low-voltage Si-MOSFET 11, and the gate 121 of the high-voltage depletion-mode gallium nitride HEMT 12 and the source 113 of the low-voltage Si-MOSFET 11 are connected as the source 103 of the cascaded structure, finally realizing the enhancement function, as specifically shown in Figure 1 shown.

[0005] When the low-voltage Si-MOSFET 11 is turned off, the gate 121 of the high-voltage depletion-mode gallium nitride HEMT 12 releases positive charges to the source 103 of the switching device; when the low-voltage Si-MOSFET 11 is turned on, the gate 121 of the high-voltage depletion-mode gallium nitride HEMT 12 will receive the positive charges released from the source 103 of the switching device. In order to adjust the conduction speed of the low-voltage Si-MOSFET 11, an adjustable resistor 13 is provided on the release channel between the gate 121 of the high-voltage depletion-mode gallium nitride HEMT 12 and the source 103 of the switching device; thus, by adjusting the resistance value of the adjustable resistor 13, the conduction speed of the low-voltage Si-MOSFET 11 can be adjusted.

[0006] However, when the low-voltage Si-MOSFET 11 is turned on, the voltage between the gate 121 of the high-voltage depletion-mode gallium nitride HEMT 12 and the source 103 of the switching device is variable, so the current passing through the adjustable resistor 13 when the low-voltage Si-MOSFET 11 is turned on is also constantly changing, which is not convenient for accurately controlling the conduction speed of the low-voltage Si-MOSFET 11, and may further cause delay and distortion of the gate voltage signal.

[0007] Therefore, it is necessary to provide a switching device that can accurately control the conduction speed of the low-voltage Si-MOSFET.

Content of the Utility Model

[0009] The utility model aims to solve the above problems, and provides a switching device that can adjust the conduction speed of the switching device and whose gate voltage will not have delay and distortion.

[0010] To achieve the object of the present utility model, the present utility model provides a switching device with controllable conduction speed, which comprises:

[0011] A gate terminal for receiving a voltage signal from a driver;

[0012] A source terminal and a drain terminal for forming a switching channel of an external load, and two semiconductor channels are provided between the source terminal and the drain terminal;

[0013] A low-voltage enhancement-mode field-effect transistor, the gate of the low-voltage enhancement-mode field-effect transistor serves as the gate terminal of the switching device for receiving a voltage signal from a driver; the drain of the low-voltage enhancement-mode field-effect transistor is connected to the source of a high-voltage field-effect transistor, the source of the low-voltage enhancement-mode field-effect transistor serves as the source terminal of the switching device, and the source of the low-voltage enhancement-mode field-effect transistor is connected to the gate of the high-voltage field-effect transistor through a speed control unit;

[0014] The high-voltage field-effect transistor, the drain of the high-voltage field-effect transistor serves as the drain terminal of the switching device;

[0015] The speed control unit includes a device conduction channel and a device turn-off channel, and a conduction constant current source is provided on the device conduction channel to control the conduction speed of the low-voltage enhancement-mode field-effect transistor.

[0016] Compared with the prior art, the switching device with controllable conduction speed of the present utility model is provided with a conduction constant current source on the device conduction channel, and the conduction constant current source can effectively control the magnitude of the current when the switching device conducts, thereby controlling the conduction speed of the low-voltage enhancement-mode field-effect transistor. It effectively solves the technical problem that the conduction speed of the low-voltage Si-MOSFET in the existing double-channel switching device cannot be accurately controlled, resulting in delay and distortion of the gate voltage signal.

BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 FIG. is a schematic structural diagram of an existing common-source and common-gate cascaded enhancement-mode switching device;

[0019] Figure 2 FIG. is a schematic structural diagram of the first embodiment of the switching device with controllable conduction speed of the present utility model;

[0020] Figure 3 FIG. is a schematic structural diagram of the second embodiment of the switching device with controllable conduction speed of the present utility model;

[0021] Figure 4 FIG. is a schematic structural diagram of the third embodiment of the switching device with controllable conduction speed of the present utility model;

[0022] Figure 5 FIG. is a schematic structural diagram of the fourth embodiment of the switching device with controllable conduction speed of the present utility model.

Specific Embodiment

[0024] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of the present application.

[0025] The present utility model discloses a switching device with controllable conduction speed. The switching device includes a gate terminal, a source terminal, a drain terminal, a low-voltage enhancement-mode field-effect transistor, a high-voltage field-effect transistor, and a speed control unit. The gate terminal is used to receive the voltage signal of the driver; the source terminal and the drain terminal are used to form a switching channel for an external load, and two semiconductor channels (a low-voltage enhancement-mode field-effect transistor and a high-voltage field-effect transistor) are arranged between the source terminal and the drain terminal.

[0026] The gate of the low-voltage enhancement-mode field-effect transistor serves as the gate terminal of the switching device for receiving the voltage signal of the driver; the drain of the low-voltage enhancement-mode field-effect transistor is connected to the source of the high-voltage field-effect transistor, the source of the low-voltage enhancement-mode field-effect transistor serves as the source terminal of the switching device, and the source of the low-voltage enhancement-mode field-effect transistor is connected to the gate of the high-voltage field-effect transistor through the speed control unit; the drain of the high-voltage field-effect transistor serves as the drain terminal of the switching device.

[0027] The speed control unit is arranged between the source of the low-voltage enhancement-mode field-effect transistor and the gate of the high-voltage field-effect transistor, and includes a device conduction channel for controlling the conduction current from the source of the low-voltage enhancement-mode field-effect transistor to the gate of the high-voltage field-effect transistor, and a device turn-off channel for controlling the turn-off current from the gate of the high-voltage field-effect transistor to the source of the low-voltage enhancement-mode field-effect transistor.

[0028] A conduction constant current source is arranged on the device conduction channel of the present utility model. The conduction constant current source can effectively control the stability of the conduction current from the source of the low-voltage enhancement-mode field-effect transistor to the gate of the high-voltage field-effect transistor. The conduction current will not change due to the voltage change between the source of the low-voltage enhancement-mode field-effect transistor and the gate of the high-voltage field-effect transistor, thereby accurately controlling the conduction speed of the switching device and avoiding the delay and distortion of the gate voltage signal.

[0029] Please refer to Figure 2 , Figure 2 which is a schematic structural diagram of the first embodiment of the switching device with controllable conduction speed of the present utility model. The switching device 20 in this embodiment includes a gate terminal 201, a source terminal 203, a drain terminal 202, a low-voltage enhancement-mode field-effect transistor 21, a high-voltage field-effect transistor 22, and a speed control unit 23.

[0030] The low-voltage enhancement-mode field-effect transistor 21 includes a gate 211, a source 213, and a drain 212; the high-voltage field-effect transistor 22 includes a gate 221, a source 223, and a drain 222.

[0031] The gate 211 of the low-voltage enhancement-mode field-effect transistor 21 serves as the gate terminal 201 of the switching device 20; the drain 212 of the low-voltage enhancement-mode field-effect transistor 21 is connected to the source 223 of the high-voltage field-effect transistor 22, the source 213 of the low-voltage enhancement-mode field-effect transistor 21 serves as the source terminal 203 of the switching device 20, and the source 213 of the low-voltage enhancement-mode field-effect transistor 21 is connected to the gate 221 of the high-voltage field-effect transistor 22 through a speed control unit 23; the drain 222 of the high-voltage field-effect transistor 22 serves as the drain terminal 202 of the switching device 20.

[0032] The speed control unit 23 of this embodiment includes a device conduction channel and a device turn-off channel. The device conduction channel includes a resistor 231 and a conduction constant current source 233. One end of the resistor 231 is connected to the gate 221 of the high-voltage field-effect transistor 22, the other end of the resistor 231 is connected to the negative pole of the conduction constant current source 233, and the positive pole of the conduction constant current source 233 is connected to the source 213 of the low-voltage enhancement-mode field-effect transistor 21.

[0033] The device turn-off channel includes a turn-off diode 232. The positive pole of the turn-off diode 232 is connected to the other end of the resistor 231, and the negative pole of the turn-off diode 232 is connected to the source 213 of the low-voltage enhancement-mode field-effect transistor 21.

[0034] When the switching device 20 of this embodiment is in use, if the user needs to turn off the switching device 20, the gate terminal 201 of the switching device 20 receives a low-level drive signal for turning off. At this time, the high-voltage field-effect transistor 22 performs a turn-off operation, and the gate 221 of the high-voltage field-effect transistor 22 releases positive charges to the source terminal 203 of the switching device 20. At this time, the turn-off diode 232 is conducting, and the conduction constant current source 233 is in parallel with the turn-off diode 232, which is equivalent to the conduction constant current source 233 being short-circuited by the turn-off diode 232. The charges of the gate 221 are released through the resistor 231 and the turn-off diode 232. The turn-off speed of the switching device 20 is determined by the magnitude of the resistor 231 and is affected by the voltage magnitude between the gate 221 and the source terminal 203.

[0035] When the user needs to turn on the switching device 20, the gate terminal 201 of the switching device 20 receives a high-level driving signal for turning on. At this time, the high-voltage field-effect transistor 22 conducts an operation, and the gate 221 of the high-voltage field-effect transistor 22 will receive the positive charge released from the source terminal 203 of the switching device 20. Since the turn-off diode 232 is in parallel with the conducting constant current source 233, the path of the turn-off diode 232 is equivalent to an open circuit. Therefore, the source 203 of the switching device 20 supplies charge to the gate 221 of the high-voltage field-effect transistor 22 through the conducting constant current source 23 and the resistor 231. Since the conducting constant current source 23 can provide a stable conducting current, this conducting current is not affected by the voltage between the gate 221 and the source terminal 203. Therefore, the user can precisely adjust the turn-on speed of the switching device 20 by setting the conducting current of the conducting constant current source 233, avoiding the delay and distortion of the gate voltage signal.

[0036] Please refer to Figure 3 , Figure 3 FIG. is a schematic structural diagram of a second embodiment of the switching device with controllable turn-on speed according to the present invention. The switching device 30 of this embodiment includes a gate terminal 301, a source terminal 303, a drain terminal 302, a low-voltage enhancement-mode field-effect transistor 31, a high-voltage field-effect transistor 32, and a speed control unit 33.

[0037] The low-voltage enhancement-mode field-effect transistor 31 includes a gate 311, a source 313, and a drain 312; the high-voltage field-effect transistor 32 includes a gate 321, a source 323, and a drain 322.

[0038] The gate 311 of the low-voltage enhancement-mode field-effect transistor 31 serves as the gate terminal 301 of the switching device 30; the drain 312 of the low-voltage enhancement-mode field-effect transistor 31 is connected to the source 323 of the high-voltage field-effect transistor 32. The source 313 of the low-voltage enhancement-mode field-effect transistor 31 serves as the source terminal 303 of the switching device 30, and the source 313 of the low-voltage enhancement-mode field-effect transistor 31 is connected to the gate 321 of the high-voltage field-effect transistor 32 through the speed control unit 33; the drain 322 of the high-voltage field-effect transistor 32 serves as the drain terminal 302 of the switching device 30.

[0039] The speed control unit 33 of this embodiment includes a device conducting channel and a device turning-off channel. The device conducting channel includes a conducting constant current source 333. The negative electrode of the conducting constant current source 333 is connected to the gate 321 of the high-voltage field-effect transistor 32, and the positive electrode of the conducting constant current source 333 is connected to the source 313 of the low-voltage enhancement-mode field-effect transistor 31.

[0040] The device turning-off channel includes a resistor 331 and a turn-off diode 332. One end of the resistor 331 is connected to the gate 321 of the high-voltage field-effect transistor 32, the other end of the resistor 331 is connected to the positive electrode of the turn-off diode 332, and the negative electrode of the turn-off diode 332 is connected to the source 313 of the low-voltage enhancement-mode field-effect transistor 31.

[0041] When the switching device 30 of this embodiment is in use, when the user needs to turn off the switching device 30, the gate terminal 301 of the switching device 30 receives a low-level drive signal for turning off. At this time, the high-voltage field-effect transistor 32 performs a turn-off operation, and the gate 321 of the high-voltage field-effect transistor 32 will release positive charges to the source terminal 303 of the switching device 30. At this time, the turn-off diode 332 is conducting, and the charges of the gate 321 are released through the resistor 331 and the turn-off diode 332. The turn-off speed of the switching device 30 is determined by the size of the resistor 331 and is affected by the voltage between the gate 321 and the source terminal 303.

[0042] When the user needs to turn on the switching device 30, the gate terminal 301 of the switching device 30 receives a high-level drive signal for turning on. At this time, the high-voltage field-effect transistor 32 performs a turn-on operation, and the gate 321 of the high-voltage field-effect transistor 32 will receive the positive charges released from the source terminal 303 of the switching device 30. Since the turn-off diode 332 is in parallel with the turn-on constant current source 333, the path of the turn-off diode 332 is equivalent to an open circuit. Therefore, the source 303 of the switching device 30 supplies charges to the gate 321 of the high-voltage field-effect transistor 32 through the turn-on constant current source 333. Since the turn-on constant current source 33 can provide a stable turn-on current, this turn-on current is not affected by the voltage between the gate 321 and the source terminal 303. Therefore, the user can precisely adjust the turn-on speed of the switching device 30 by setting the turn-on current of the turn-on constant current source 333.

[0043] Compared with the first embodiment, the resistor 331 is only arranged on the device turn-off channel. On the basis of effectively limiting the turn-off current, the influence of the resistor 331 on the voltage between the gate 321 and the source terminal 303 when the switching device 30 is turned on is avoided.

[0044] Please refer to Figure 4 , Figure 4 , which is a schematic structural diagram of the third embodiment of the switching device with a controllable turn-on speed according to the present invention. The switching device 40 of this embodiment includes a gate terminal 401, a source terminal 403, a drain terminal 402, a low-voltage enhancement-type field-effect transistor 41, a high-voltage field-effect transistor 42, and a speed control unit 43.

[0045] The low-voltage enhancement-type field-effect transistor 41 includes a gate 411, a source 413, and a drain 412; the high-voltage field-effect transistor 42 includes a gate 421, a source 423, and a drain 422.

[0046] The gate 411 of the low-voltage enhancement-mode field-effect transistor 41 serves as the gate terminal 401 of the switching device 40; the drain 412 of the low-voltage enhancement-mode field-effect transistor 41 is connected to the source 423 of the high-voltage field-effect transistor 42, and the source 413 of the low-voltage enhancement-mode field-effect transistor 41 serves as the source terminal 403 of the switching device 40. The source 413 of the low-voltage enhancement-mode field-effect transistor 41 is connected to the gate 421 of the high-voltage field-effect transistor 42 through the speed control unit 43; the drain 422 of the high-voltage field-effect transistor 42 serves as the drain terminal 402 of the switching device 40.

[0047] The speed control unit 43 of this embodiment includes a device conduction channel and a device turn-off channel. The device conduction channel includes a conduction constant current source 432. The negative pole of the conduction constant current source 432 is connected to the gate 421 of the high-voltage field-effect transistor 42, and the positive pole of the conduction constant current source 432 is connected to the source 413 of the low-voltage enhancement-mode field-effect transistor 41.

[0048] The device turn-off channel includes a turn-off constant current source 431. The positive pole of the turn-off constant current source 431 is connected to the gate 421 of the high-voltage field-effect transistor 42, and the negative pole of the turn-off constant current source 431 is connected to the source 413 of the low-voltage enhancement-mode field-effect transistor 41.

[0049] When the switching device 40 of this embodiment is in use, if the user needs to turn off the switching device 40, the gate terminal 401 of the switching device 40 receives a low-level drive signal for turning off. At this time, the high-voltage field-effect transistor 42 performs a turn-off operation, and the gate 421 of the high-voltage field-effect transistor 42 will release positive charges to the source terminal 403 of the switching device 40. The charges of the gate 421 are released through the turn-off constant current source 431. The turn-off speed of the switching device 40 is determined by the current magnitude of the turn-off constant current source 431, and this turn-off speed is not affected by the voltage magnitude between the gate 421 and the gate terminal 401.

[0050] If the user needs to turn on the switching device 40, the gate terminal 401 of the switching device 40 receives a high-level drive signal for turning on. At this time, the high-voltage field-effect transistor 42 performs a turn-on operation, and the gate 421 of the high-voltage field-effect transistor 42 will receive the positive charges released from the source terminal 403 of the switching device 40. The source 403 of the switching device 40 provides charges to the gate 421 of the high-voltage field-effect transistor 42 through the conduction constant current source 432. Since the conduction constant current source 432 can provide a stable conduction current, this conduction current is not affected by the voltage magnitude between the gate 421 and the source terminal 403. Therefore, the user can precisely adjust the turn-on speed of the switching device 40 by setting the conduction current of the conduction constant current source 432.

[0051] Compared with the first embodiment, the switching device 40 of this embodiment can precisely control both the turn-off speed and the turn-on speed, such that the turn-off speed and the turn-on speed of the switching device 40 are not affected by the magnitude of the voltage between the gate 421 and the source terminal 403, avoiding the delay and distortion of the gate voltage signal.

[0052] Please refer to Figure 5 , Figure 5 , which is a schematic structural diagram of the fourth embodiment of the switching device with controllable turn-on speed according to the present invention. The switching device 50 of this embodiment includes a gate terminal 501, a source terminal 503, a drain terminal 502, a low-voltage enhancement-mode field-effect transistor 51, a high-voltage field-effect transistor 52, and a speed control unit 53.

[0053] The low-voltage enhancement-mode field-effect transistor 51 includes a gate 511, a source 513, and a drain 512; the high-voltage field-effect transistor 52 includes a gate 521, a source 523, and a drain 522.

[0054] The gate 511 of the low-voltage enhancement-mode field-effect transistor 51 serves as the gate terminal 501 of the switching device 50; the drain 512 of the low-voltage enhancement-mode field-effect transistor 51 is connected to the source 523 of the high-voltage field-effect transistor 52, the source 513 of the low-voltage enhancement-mode field-effect transistor 51 serves as the source terminal 503 of the switching device 50, and the source 513 of the low-voltage enhancement-mode field-effect transistor 51 is connected to the gate 521 of the high-voltage field-effect transistor 52 through the speed control unit 53; the drain 522 of the high-voltage field-effect transistor 52 serves as the drain terminal 502 of the switching device 50.

[0055] The speed control unit 53 of this embodiment includes a device turn-on channel and a device turn-off channel. The device turn-on channel includes a turn-on diode 533 and a turn-on constant current source 534. The negative electrode of the turn-on diode 533 is connected to the gate 521 of the high-voltage field-effect transistor 52, the positive electrode of the turn-on diode 533 is connected to the negative electrode of the turn-on constant current source 534, and the positive electrode of the turn-on constant current source 534 is connected to the source 513 of the low-voltage enhancement-mode field-effect transistor 51.

[0056] The device turn-off channel includes a turn-off diode 532 and a turn-off constant current source 531. The positive electrode of the turn-off constant current source 531 is connected to the gate 521 of the high-voltage field-effect transistor 52, the negative electrode of the turn-off constant current source 531 is connected to the positive electrode of the turn-off diode 532, and the negative electrode of the turn-off diode 532 is connected to the source 513 of the low-voltage enhancement-mode field-effect transistor 51.

[0057] When the switching device 50 of this embodiment is in use, if the user needs to turn off the switching device 50, the gate terminal 501 of the switching device 50 receives a low-level drive signal for turning off. At this time, the high-voltage field-effect transistor 52 performs a turn-off operation, and the gate 521 of the high-voltage field-effect transistor 52 will release positive charges to the source terminal 503 of the switching device 50. The charges of the gate 521 are released through the turn-off constant current source 531 and the turn-off diode 532. The turn-off speed of the switching device 50 is determined by the current magnitude of the turn-off constant current source 531, and this turn-off speed will not be affected by the voltage magnitude between the gate 521 and the gate terminal 501.

[0058] If the user needs to turn on the switching device 50, the gate terminal 501 of the switching device 50 receives a high-level drive signal for turning on. At this time, the high-voltage field-effect transistor 52 performs a turn-on operation, and the gate 521 of the high-voltage field-effect transistor 52 will receive the positive charges released from the source terminal 503 of the switching device 50. The source 503 of the switching device 50 provides charges to the gate 521 of the high-voltage field-effect transistor 52 through the turn-on constant current source 534 and the turn-on diode 533. Since the turn-on constant current source 534 can provide a stable turn-on current, this turn-on current will not be affected by the voltage magnitude between the gate 521 and the source terminal 503. Therefore, the user can precisely adjust the turn-on speed of the switching device 50 by setting the turn-on current of the turn-on constant current source 534.

[0059] Compared with the third embodiment, the switching device 50 of this embodiment can ensure the normal operation of the turn-on constant current source 534 through the turn-on diode 533 and ensure the normal operation of the turn-off constant current source 531 through the turn-off diode 532; it avoids the influence of the turn-on constant current source 534 on the turn-off constant current source 531 during the turn-off operation of the switching device 50, and also avoids the influence of the turn-off constant current source 531 on the turn-on constant current source 534 during the turn-on operation of the switching device, further improving the control accuracy of the turn-off speed and turn-on speed of the switching device.

[0060] The switching device with a controllable turn-on speed of the present utility model is provided with a turn-on constant current source on the device turn-on channel. This turn-on constant current source can effectively control the current magnitude when the switching device is turned on, and thus control the turn-on speed of the low-voltage enhancement-mode field-effect transistor. It effectively solves the technical problem that the turn-on speed of the low-voltage Si-MOSFET in the existing dual-channel switching device cannot be accurately controlled.

[0061] Although the present utility model has been disclosed through the above embodiments, the protection scope of the present utility model is not limited thereto. Without departing from the concept of the present utility model, several deductions, substitutions, etc. made to the above components will fall within the scope of the claims of the present utility model.

Claims

1. A switching device with controllable conduction speed, characterized in that, Comprising: A gate terminal for receiving a voltage signal from a driver; A source terminal and a drain terminal for forming a switching channel of an external load, with two semiconductor channels provided between the source terminal and the drain terminal; A low-voltage enhancement-mode field-effect transistor, the gate of which serves as the gate terminal of the switching device for receiving a voltage signal from a driver; The drain of the low-voltage enhancement-mode field-effect transistor is connected to the source of a high-voltage field-effect transistor, the source of the low-voltage enhancement-mode field-effect transistor serves as the source terminal of the switching device, and the source of the low-voltage enhancement-mode field-effect transistor is connected to the gate of the high-voltage field-effect transistor through a speed control unit; The high-voltage field-effect transistor, the drain of which serves as the drain terminal of the switching device; The speed control unit includes a device conduction channel and a device turn-off channel, wherein a conduction constant current source is provided on the device conduction channel to control the conduction speed of the low-voltage enhancement-mode field-effect transistor.

2. The switch device with controllable conduction speed according to claim 1, wherein The device conduction channel includes a resistor and a conduction constant current source. One end of the resistor is connected to the gate of the high-voltage field-effect transistor, the other end of the resistor is connected to the negative electrode of the conduction constant current source, and the positive electrode of the conduction constant current source is connected to the source of the low-voltage enhancement-mode field-effect transistor; The device turn-off channel includes a turn-off diode. The positive electrode of the turn-off diode is connected to the other end of the resistor, and the negative electrode of the turn-off diode is connected to the source of the low-voltage enhancement-mode field-effect transistor.

3. The switch device with controllable conduction speed according to claim 2, characterized in that, When the switching device is conducting, the conduction current passes through the resistor and the conduction constant current source; when the switching device is turned off, the turn-off current passes through the resistor and the turn-off diode.

4. The switch device with controllable conduction speed according to claim 1, characterized in that, The device conduction channel includes a conduction constant current source. The negative electrode of the conduction constant current source is connected to the gate of the high-voltage field-effect transistor, and the positive electrode of the conduction constant current source is connected to the source of the low-voltage enhancement-mode field-effect transistor; The device turn-off channel includes a resistor and a turn-off diode. One end of the resistor is connected to the gate of the high-voltage field-effect transistor, the other end of the resistor is connected to the positive electrode of the turn-off diode, and the negative electrode of the turn-off diode is connected to the source of the low-voltage enhancement-mode field-effect transistor.

5. The switch device with controllable conduction speed according to claim 4, characterized in that, When the switching device is conducting, the conduction current passes through the conduction constant current source; when the switching device is turned off, the turn-off current passes through the resistor and the turn-off diode.

6. The switch device with controllable conduction speed according to claim 1, characterized in that, The device conduction channel includes a conduction constant current source. The negative electrode of the conduction constant current source is connected to the gate of the high-voltage field-effect transistor, and the positive electrode of the conduction constant current source is connected to the source of the low-voltage enhancement-mode field-effect transistor; The device turn-off channel includes a turn-off constant current source. The positive electrode of the turn-off constant current source is connected to the gate of the high-voltage field-effect transistor, and the negative electrode of the turn-off constant current source is connected to the source of the low-voltage enhancement-mode field-effect transistor.

7. The switch device with controllable conduction speed according to claim 6, wherein When the switching device is conducting, the conduction current passes through the conduction constant current source; when the switching device is turned off, the turn-off current passes through the turn-off constant current source.

8. The switch device with controllable conduction speed according to claim 4, characterized in that, The conduction channel of the device includes a conduction diode and a conduction constant current source. The negative electrode of the conduction diode is connected to the gate of the high-voltage field-effect transistor. The positive electrode of the conduction diode is connected to the negative electrode of the conduction constant current source. The positive electrode of the conduction constant current source is connected to the source of the low-voltage enhancement-mode field-effect transistor; The turn-off channel of the device includes a turn-off diode and a turn-off constant current source. The positive electrode of the turn-off constant current source is connected to the gate of the high-voltage field-effect transistor. The negative electrode of the turn-off constant current source is connected to the positive electrode of the turn-off diode. The negative electrode of the turn-off diode is connected to the source of the low-voltage enhancement-mode field-effect transistor.

9. The switch device with controllable conduction speed according to claim 8, characterized in that, When the switching device is turned on, the conduction current passes through the conduction constant current source and the conduction diode. When the switching device is turned off, the turn-off current passes through the turn-off constant current source and the turn-off diode.

10. The switch device with controllable conduction speed according to any one of claims 1-9, characterized in that, The conduction constant current source and the turn-off constant current source are transistors with a current limiting function.

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