Image sensor device

Abstract

The utility model provides an image sensor device and a red-green-blue complementary metal oxide semiconductor image sensor device. The image sensor device includes a first substrate including at least one visible light sensor disposed between a first side and a second side of the first substrate; a second substrate including an infrared light sensor disposed between the second side of the second substrate and the first side of the second substrate; and a super lens disposed between the visible light sensor and the infrared light sensor, the super lens configured to focus the infrared light irradiated on the surface of the first substrate onto the infrared light sensor.

Description

Technical Field

[0001] The utility model relates to an image sensor device and a complementary metal oxide semiconductor image sensor device for red, green and blue. Background Art

[0002] The following relates to image sensor technology, infrared image sensor technology, combined visible light / infrared image sensor technology, its applications (such as finding imager and imager with integrated night vision capabilities), and related technologies. Summary of the Utility Model

[0003] The utility model provides an image sensor device, comprising: a first substrate including a first side and a second side opposite to the first side, the first substrate including at least one visible light sensor disposed between the first side of the first substrate and the second side of the first substrate, the at least one visible light sensor being configured to detect visible light; a first dielectric region disposed on the first side of the first substrate and including one or more patterned metal layers; a second substrate including a first side and a second side opposite to the first side, the second substrate including at least one infrared light sensor disposed between the second side of the second substrate and the first side of the second substrate, the at least one infrared light sensor being configured to detect infrared light; a second dielectric region disposed on the second side of the second substrate and including one or more patterned metal layers electrically connected to the one or more patterned metal layers of the first dielectric region; and a super lens disposed between the at least one visible light sensor and the at least one infrared light sensor, the super lens being configured to focus the infrared light irradiated on the second side of the first substrate onto the at least one infrared light sensor.

[0004] In some embodiments, the present utility model provides a method for forming an image sensor device, including: providing a first substrate including at least one visible light sensor configured to detect visible light; forming a first dielectric region including one or more patterned metallization layers on a first side of the first substrate, the first dielectric region having a first side away from the first substrate; providing a second substrate including at least one infrared light sensor configured to detect infrared light; forming a second dielectric region including one or more patterned metallization layers on a first side of the second substrate, the second dielectric region having a first side away from the second substrate; forming a meta-lens on the first side of the first substrate, the first side of the second substrate, the first side of the first dielectric region or the first side of the second dielectric region; and bonding the first side of the first dielectric region and the first side of the second dielectric region together, the bonding including electrically connecting the one or more patterned metallization layers of the first dielectric region and the one or more patterned metallization layers of the second dielectric region.

[0005] In some embodiments, the present utility model provides a red, green, and blue complementary metal oxide semiconductor image sensor device, including: a first substrate including a back surface and a front surface opposite to the back surface, the first substrate including: a red photosensitive region, a green photosensitive region, and a blue photosensitive region, the red photosensitive region, the green photosensitive region, and the blue photosensitive region being disposed between the front surface and the back surface, and the red photosensitive region, the green photosensitive region, and the blue photosensitive region being separated by deep isolation trenches; and a dielectric region extending from the red photosensitive region, the green photosensitive region, and the blue photosensitive region to the front surface; and a second substrate including a back surface and a front surface opposite to the back surface, the second substrate including a radiation sensing detector region disposed between the back surface and the front surface, and a dielectric region extending from the radiation sensing detector region to the back surface, wherein one of the dielectric region of the first substrate and the dielectric region of the second substrate includes a meta-lens grid structure optically aligned with each of the red photosensitive region, the green photosensitive region, and the blue photosensitive region to focus incident radiation onto the radiation sensing detector region of the second substrate, the incident radiation passing through the first substrate to the radiation sensing detector region of the second substrate, the first substrate and the second substrate being stacked and bonded to: a) connect the dielectric region of the first substrate and the dielectric region of the second substrate, and b) optically align the red photosensitive region, the green photosensitive region, and the blue photosensitive region with the radiation sensing detector region. Description of the Drawings

[0006] As will be best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that, in accordance with industry standard practice, the various features are not drawn to scale. In fact, for clarity of discussion, the dimensions of the various features may be increased or decreased arbitrarily.

[0007] Figures 1A to 1C Shows various cross-sectional views of an image sensor device structure according to some embodiments, Figure 1D Shows a top view and an end view of a metalens according to some embodiments, and Figure 1E Shows further details of the metalens position and design criteria. Figure 1A Is a cross-sectional view of a multi-complementary metal oxide semiconductor image sensor (CMOS Image Sensor, CIS) without a metalens facing a single short wavelength infrared (SWIR); Figure 1B Is a cross-sectional view of a multi-CIS to single-SWIR facing each other, which includes a metalens structure in the intermetal dielectric (IMD) of the top semiconductor according to some embodiments. Figure 1C Is a cross-sectional view of a multi-CIS to single-SWIR facing each other, which includes a metalens structure in the intermetal dielectric (IMD) of the bottom semiconductor according to some embodiments.

[0008] Figures 2A to 2B Shows various cross-sectional views of an image sensor device structure according to some embodiments. Figure 2A Is a cross-sectional view of a single-CIS to single-SWIR facing each other according to some embodiments, which includes a metalens structure in the intermetal dielectric (IMD) of the top semiconductor. Figure 2B Is a cross-sectional view of a single-CIS to single-SWIR facing each other according to some embodiments, which includes a metalens structure in the intermetal dielectric (IMD) of the bottom semiconductor.

[0009] Figures 3A to 3D Shows various cross-sectional views of an image sensor device structure according to some embodiments. Figure 3A Is a cross-sectional view of a face-to-back multi-CIS, a single SWIR, and an application specific integrated circuit (ASIC) that does not include a metalens structure. Figure 3BIs a cross-sectional view of a face-to-back multi-CIS to single-SWIR and ASIC according to some embodiments, which includes a metalens structure in the IMD of the top semiconductor. Figure 3C Is a cross-sectional view of a face-to-back multi-CIS to single-SWIR and ASIC according to some embodiments, which includes a metalens structure in the IMD of the bottom semiconductor. Figure 3D Is a cross-sectional view of a face-to-back multi-CIS to single-SWIR and ASIC according to some embodiments, which includes a metalens structure in the face of the bottom semiconductor.

[0010] Figures 4A to 4C Shows various cross-sectional views of an image sensor device structure according to some embodiments. Figure 4A Is a cross-sectional view of a face-to-face multi-CIS to multi-SWIR and ASIC according to some embodiments, which includes a metalens structure in the IMD of the top semiconductor. Figure 4B Is a cross-sectional view of a face-to-back multi-CIS to multi-SWIR and ASIC according to some embodiments, which includes a metalens structure in the IMD of the bottom semiconductor. Figure 4C Is a cross-sectional view of a face-to-back multi-CIS to multi-SWIR and ASIC according to some embodiments, which includes a metalens structure in the face of the bottom semiconductor.

[0011] Figures 5A to 5B Shows various cross-sectional views of an image sensor device structure according to some embodiments, which includes a face-to-back multi-CIS wavelength filter / target wavelength detector, and the wavelength filter / target wavelength detector includes a metalens structure in the face of the bottom semiconductor.

[0012] Figures 6A to 6B Shows various cross-sectional views of an image sensor device structure according to some embodiments, which includes a face-to-back multi-CIS wavelength filter / multi-target wavelength detector, and the wavelength filter / multi-target wavelength detector includes a metalens structure in the face of the bottom semiconductor.

[0013] Figures 7A to 7B Shows various cross-sectional views of an image sensor device structure according to some embodiments, which includes a face-to-back multi-CIS multi-wavelength filter / multi-target wavelength detector, and the multi-wavelength filter / multi-target wavelength detector includes a metalens structure in the face of the bottom semiconductor.

[0014] Figures 8A to 8D Shows as Figure 1B Shown are various manufacturing steps of the image sensor device (face-to-face multi-CIS to single-SWIR). Specifically, Figures 8A to 8D Shows the top semiconductor portion including the metalens structure in the IMD of the top semiconductor.

[0015] Figures 9A to 9CShows as Figure 1B various manufacturing steps of the image sensor device (face-to-face multi-CIS to single-SWIR) shown. Specifically, Figures 9A to 9C shows the bottom semiconductor part.

[0016] Figure 10 Shows as Figure 1B the manufacturing steps of the image sensor device (face-to-face multi-CIS to single-SWIR) shown. Specifically, Figure 10 shows the top semiconductor part, which includes a superlens structure in the IMD of the top semiconductor joined to the bottom semiconductor part.

[0017] Figures 11A to 11D Shows as Figure 1C various manufacturing steps of the image sensor device (face-to-face multi-CIS to single-SWIR) shown. Specifically, Figures 11A to 11D shows the top semiconductor part.

[0018] Figures 12A to 12C Shows as Figure 1C various manufacturing steps of the image sensor device (face-to-face multi-CIS to single-SWIR) shown. Specifically, Figures 12A to 12C shows the bottom semiconductor part including a superlens structure in the IMD of the bottom semiconductor.

[0019] Figure 13 Shows as Figure 1C various manufacturing steps of the image sensor device (face-to-face multi-CIS to single-SWIR) shown. Specifically, Figure 13 shows the top semiconductor part joined to the bottom semiconductor part, which includes a superlens structure in the IMD of the bottom semiconductor.

[0020] Figures 14A to 14D Shows as Figure 2A various manufacturing steps of the image sensor device (face-to-face single-CIS to single-SWIR) shown. Specifically, Figures 14A to 14D shows the top semiconductor part, which includes a superlens structure in the IMD of the top semiconductor.

[0021] Figures 15A to 15C Shows as Figure 2A various manufacturing steps of the image sensor device (face-to-face single-CIS to single-SWIR) shown. Specifically, Figures 15A to 15C shows the bottom semiconductor part.

[0022] Figure 16 Shows as Figure 2A the manufacturing steps of the image sensor device (face-to-face single-CIS to single-SWIR) shown. Specifically, Figure 16Shows a top semiconductor portion bonded to a bottom semiconductor portion, which includes a superlens structure in the IMD of the top semiconductor.

[0023] Figures 17A to 17D Shows as Figure 2B shown various manufacturing steps of an image sensor device (face-to-face single CIS to single SWIR). Specifically, Figures 17A to 17D shows the top semiconductor portion.

[0024] Figures 18A to 18C Shows as Figure 2B shown various manufacturing steps of an image sensor device (face-to-face single CIS to single SWIR). Specifically, Figures 18A to 18C shows the bottom semiconductor portion, which includes a superlens structure in the IMD of the bottom semiconductor.

[0025] Figure 19 Shows as Figure 2B shown manufacturing steps of an image sensor device (face-to-face single CIS to single SWIR). Specifically, Figure 19 shows a top semiconductor portion bonded to a bottom semiconductor portion, which includes a superlens structure in the IMD of the bottom semiconductor.

[0026] Figures 20A to 20D Shows as Figure 3B shown various manufacturing steps of an image sensor device (back-to-back multi-CIS to single SWIR). Specifically, Figures 20A to 20D shows the top semiconductor portion, which includes a superlens structure in the IMD of the top semiconductor.

[0027] Figures 21A to 21C Shows as Figure 3B shown various manufacturing steps of an image sensor device (back-to-back multi-CIS to single SWIR). Specifically, Figures 21A to 21C shows the bottom semiconductor portion.

[0028] Figure 22 Shows as Figure 3B shown manufacturing steps of an image sensor device (back-to-back multi-CIS to single SWIR). Specifically, Figure 22 shows a top semiconductor portion bonded to a bottom semiconductor portion, which includes a superlens structure in the IMD of the top semiconductor.

[0029] Figures 23A to 23D Shows as Figure 3C shown various manufacturing steps of an image sensor device (back-to-back multi-CIS to single SWIR). Specifically, Figures 23A to 23D shows the top semiconductor portion.

[0030] Figures 24A to 24CShows as Figure 3C various manufacturing steps of the image sensor device (face-to-back multi-CIS to single-SWIR) shown. Specifically, Figures 24A to 24C shows the bottom semiconductor portion, which includes a superlens structure in the IMD of the bottom semiconductor.

[0031] Figure 25 Shows as Figure 3C the manufacturing steps of the image sensor device (face-to-back multi-CIS to single-SWIR) shown. Specifically, Figure 25 shows the top semiconductor portion joined to the bottom semiconductor portion, which includes a superlens structure in the IMD of the bottom semiconductor.

[0032] Figures 26A to 26D Shows as Figure 3D various manufacturing steps of the image sensor device (face-to-back multi-CIS to single-SWIR) shown. Specifically, Figures 26A to 26D shows the top semiconductor portion.

[0033] Figures 27A to 27D Shows as Figure 3D various manufacturing steps of the image sensor device (face-to-back multi-CIS to single-SWIR) shown. Specifically, Figures 27A to 27D shows the bottom semiconductor portion, which includes a superlens structure in the surface of the bottom semiconductor.

[0034] Figure 28 Shows as Figure 3D the manufacturing steps of the image sensor device (face-to-back multi-CIS to single-SWIR) shown. Specifically, Figure 28 shows the top semiconductor portion joined to the bottom semiconductor portion, which includes a superlens structure in the surface of the bottom semiconductor. Detailed Description

[0035] The following disclosure provides many different embodiments or examples for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are merely examples and are not intended to be limiting. For example, forming a first feature on or above a second feature in the following description may include embodiments where the first and second features are formed in direct contact, and may also include embodiments where additional features may be formed between the first and second features such that the first and second features may not be in direct contact. Additionally, the present utility model may repeat reference numerals and / or letters in various examples. This repetition is for simplicity and clarity purposes and does not itself prescribe a relationship between the various embodiments and / or configurations discussed.

[0036] In addition, for ease of description, this document may use spatial relative terms such as "below", "beneath", "lower", "above", "upper", and the like to describe the relationship of one component or feature to another component or feature, as shown in the figures. In addition to the orientations depicted in the figures, the spatially relative terms are intended to encompass different orientations of the device during use or operation. The device may be oriented in other ways (rotated 90 degrees or in other orientations) and the spatially relative descriptors used herein may be interpreted accordingly as well.

[0037] Embodiments of the present invention relate to image sensor devices that have improved detection capabilities for infrared radiation, such as near-infrared radiation or SWIR (short-wavelength infrared). Some of the image sensor devices disclosed herein include visible light and infrared radiation detection, which are implemented as a two-chip, substrate, wafer design, including separate image sensors, such as RGB (red, green, blue) sensors and infrared (IR) radiation sensors. In such disclosed designs, light first impinges on the RGB sensor, and infrared light must pass through the RGB sensor to reach the infrared sensor. This approach takes advantage of the relatively high transmittance of silicon to infrared light, so it can pass through the RGB sensor to reach the second infrared sensor. This enables the integration of the RGB and infrared light sensors, thus providing advantages such as a more compact design and potentially higher pixel resolution. However, it is recognized herein that the infrared detection performance may be limited due to defocus of the infrared light that passes through the RGB image sensor before being received in the infrared sensing region. This defocus problem may be caused by an extended length of the optical path from the RGB image sensor to the infrared sensing region. Although the front side may include front-side microlenses to focus light, these microlenses are designed to focus visible light onto the RGB sensor. The infrared sensor is farther away from the microlenses, and the microlenses are designed for visible light rather than for infrared light (which has a longer wavelength). Therefore, due to the differences in the target focal plane and wavelength, it is generally not feasible to optimize the microlenses for both the RGB image sensor and the infrared image sensor.

[0038] Embodiments of the present invention relate to an image sensor device that incorporates or integrates a metalens into an optical sensor, such as an RGB sensor or an infrared light sensor (e.g., a SWIR sensor), to focus infrared light onto a semiconductor infrared sensing region. The metalens is very thin and can thus be integrated into the interface between the RGB sensor and the infrared sensor. The additional metalens advantageously decouples the optical designs of visible light and infrared light, as the microlenses can be designed to focus visible light onto the RGB sensor, while the metalens can be designed to focus infrared light (which has a longer wavelength than visible light) onto the infrared sensor. Also, since the metalens is located along the optical path after the RGB sensor, it does not affect the focusing of visible light onto the RGB sensor.

[0039] Non-limiting examples of applications of embodiments of the present invention include integrating the image sensor device with a suitable ASIC (Application Specific Integrated Circuit) to provide RGB sensing, Time of Flight (ToF) detection, SWIR detection, Phase Detection Focus (PDAF), wavelength filtering, wavelength splitting (multi-wavelength sensing), and wavelength spectrum analysis. For example, the combined RGB / infrared sensor can use the RGB sensor under daylight conditions and the infrared sensor at night or other low-light conditions to provide integrated daylight and night vision capabilities.

[0040] In another application, the infrared sensor combined with a pulsed infrared laser can provide a ToF distance detector, where the distance (range) of an object is determined based on the time from the emission of an infrared pulse to the detection of the reflected infrared light by the infrared sensor.

[0041] The metalens generally includes a pattern formed on or in a surface or interface disposed between at least one visible light sensor and at least one infrared light sensor. The metalens is configured to focus light incident on the semiconductor device onto the optical sensor.

[0042] Reference Figures 1A to 1C , shows various cross-sectional views of an image sensor device structure according to some embodiments. Figure 1D A top view and an end view of a metalens according to some embodiments are shown, Figure 1E showing further details of the metalens position and design criteria.

[0043] For comparison, Figure 1ACross-sectional view of a sensor device structure with multiple CIS (CMOS image sensors) and a single SWIR (short-wavelength infrared) facing each other without a metalens. As shown, the image sensor device 100 can be a CMOS image sensor combined with a single SWIR Ge (germanium) sensor 160 or a top wafer RGB CIS (CMOS image sensor) 120. This top / bottom wafer device also includes an RGB microlens layer 110 and a color filter layer 112. Metal wiring or metallization traces are provided on the front surfaces of the RGB CIS wafer and the SWIR Ge wafer. As shown, incident visible light is detected by the top wafer RGB CIS, and incident SWIR light passes through the top wafer RGB CIS and is detected by the SWIR Ge wafer. The RGB microlens layer 110 is designed to focus visible light onto the red, green, and blue sensors of the CMOS image sensor 120. Due to differences in the designed base wavelengths (shorter-wavelength visible light and longer-wavelength infrared light) and the designed base focal lengths (the red, green, and blue sensors of the CMOS image sensor are closer to the RGB microlens 110 than the SWIR Ge sensor 160), the microlens 110 generally cannot be designed to focus infrared light onto the SWIR Ge sensor 160 at the same time.

[0044] Reference Figure 1B , a cross-sectional view of a face-to-face multi-CIS to single-SWIR according to some embodiments is shown, which includes a metalens structure in the intermetal dielectric (IMD) of the top semiconductor. As shown, the image sensor device 200 can be a CMOS image sensor combined with a single SWIR Ge sensor 260 or a top semiconductor RGB CIS (CMOS image sensor). This top / bottom semiconductor device also includes an RGB microlens layer 210 and a color filter layer 212. Metal wiring or metallization traces 232 and 252 are provided on the front surfaces of the RGB CIS semiconductor and the SWIR Ge wafer, respectively. As shown, incident visible light is detected by the top semiconductor RGB CIS, and incident SWIR light passes through the top semiconductor RGB CIS and is detected by the SWIR Ge semiconductor 260. According to one embodiment, the top / bottom semiconductor device includes a top wafer and a bottom wafer.

[0045] For simplicity, Figure 1BOnly three color photosensitive regions 222A, 222B, and 222C of the image sensor device 200 are shown, but the embodiments of the present invention are not limited thereto. In some embodiments, the photosensitive regions 222A, 222B, and 222C are photosensitive regions for red, green, and blue, respectively. (It should be noted that the photosensitive regions 222A, 222B, and 222C themselves may not be able to distinguish red light, green light, and blue light, but may generally be sensitive to visible light, and pass red light, green light, and blue light respectively through the color filter layer 112 to reach their respective red, green, and blue photosensitive regions 222A, 222B, and 222C to achieve photosensitivity for specific colors. Other combinations of the photosensitive regions 222A, 222B, and 222C (for example, using other color filters) can be applied to various embodiments. As another non-limiting illustrative example, the visible light array may include red, green, and blue photosensitive regions, and another visible light photosensitive region for detecting white light (where the color filter of the visible light photosensitive region may be omitted, or white light may be allowed to pass). In addition, it should be understood that Figure 1B (and other similar figures herein) show a single RGB (or other color) pixel, but for imaging applications, an example array of the image sensor device 200 is provided to provide an image sensor array.

[0046] In Figure 1B , the semiconductor substrate 220 of the image sensor device 200 includes a photosensitive region 222 (exemplary photosensitive regions 222A, 222B, 222C) for detecting incident light and an isolation region 224 (exemplary isolation regions 224A, 224B, 224C) for isolating the photosensitive region 222 from crosstalk. The semiconductor substrate 220 can be, for example, a silicon substrate. In some exemplary examples, the semiconductor substrate 220 includes bulk silicon that can be undoped or doped (for example, p-type, n-type, or a combination thereof). Other materials suitable for forming the image sensor device 200 can be used. For example, the semiconductor substrate 220 can include materials such as germanium, quartz, sapphire, glass, and / or another suitable material. Alternatively, the semiconductor substrate 220 can be the active layer of a semiconductor-on-insulator (SOI) substrate. As Figure 1B shown, each photosensitive component 222 extends from the front surface 220F of the semiconductor substrate 220.

[0047] The infrared photosensitive component 262 is disposed in the second photosensitive region 262 of the second semiconductor substrate 260 and is located on the front surface of the semiconductor substrate 260. The infrared photosensitive component 262 can include, for example, germanium, silicon germanium, gallium arsenide, indium phosphide, gallium antimonide, cadmium telluride, indium arsenide, indium antimonide, combinations thereof, and / or another suitable material having a bandgap or other properties suitable for providing absorption of infrared light. AsFigure 1B As shown, each infrared light-sensitive component 262 extends from the front surface 260F of the semiconductor substrate 260.

[0048] As will be described herein, the dielectric region includes one or more dielectric layers 230 disposed over the front surface of the semiconductor substrate 220, and / or one or more dielectric layers 250 disposed over the front surface of the semiconductor substrate 260. The dielectric layer 230 may include various metal grids or metallization layers 232, and / or the dielectric layer 250 may include various metal grids or metallization layers 252. These metallization layers 232 / 252 provide electrical connection of the light-sensitive component 222 and / or the infrared sensing component 262 to transistors (226A, 226B, 226C, for example, located elsewhere in the semiconductor substrate 220 and / or 260, or in a separate third substrate) to collect electrons generated by incident light and / or incident radiation (such as visible light and / or infrared radiation) traveling to the light-sensitive region 222 and the infrared light-sensitive region 262 of the semiconductor substrates 220 and 260, respectively, and convert the collected electrons into voltage signals. For example, the transistors may include transfer transistors, reset transistors, source follower transistors, row select transistors, and / or combinations of other suitable transistors. Optionally, there may be multiple metallization layers 232 and / or 252 separated by IMD materials, which are formed using a typical back end-of-line (BEOL) process. The metallization of the metallization layers 232 / 252 may include, for example, metal materials such as aluminum, copper, tungsten, tantalum, titanium, combinations thereof, and / or the like.

[0049] The dielectric layers 230 / 250 may be referred to as interlayer dielectric (ILD) layers or intermetal dielectric (IMD) layers. The IMD layers 230 / 250 may include materials such as silicon dioxide (SiO2), silicon nitride, silicon oxynitride, low-k dielectrics, spin-on glass (SOG), phosphosilicate glass (PSG), borosilicate glass (BSG), boron-doped phosphosilicate glass (BPSG), tetraethyl orthosilicate (TEOS) oxide materials, multilayers thereof, and / or the like. Additionally, the IMD layers 230 / 250 may include vias and wires, i.e., metal grids or metallization layers 252; each via may be electrically connected between the wires 252, and the wires 252 may electrically connect the photosensors 222A, 222B, 222C, 262 to transistors or other driving electronics (not shown) to transmit voltage signals.

[0050] In some embodiments, the isolation region 224 may be implemented as deep trench isolation (DTI) 224 (224A, 224B, 224C), which is disposed in the photosensitive semiconductor substrate 220 between the photosensors 222A, 222B, 222C to prevent incident light from passing through it, i.e., to provide optical isolation. The DTI 224 includes isolation materials such as tungsten, hafnium oxide, tantalum oxide, zirconium oxide, titanium oxide, aluminum oxide, high-k dielectrics, combinations thereof, and / or another suitable material. If the DTI 224 is an electrically insulating material, they can also enhance the electrical isolation between the photosensors 222A, 222B, 222C. As Figure 1B shown, the illustrated DTI 224 extends from the back surface 220B of the semiconductor substrate 220. The top surface of the DTI 224 may be above the semiconductor substrate 220 or coplanar with the back surface 220B of the semiconductor substrate 220. The DTI 224 may include a thickness T DTI (i.e., from the back surface 220B of the semiconductor substrate 220 to the bottom surface of the DTI 224) and a width W DTI , and the ratio of the thickness T DTI to the width W DTI may be equal to or greater than 5 to provide good isolation performance. In some embodiments, the ratio of the thickness T DTI to the width W DTI is in the range of about 5 to about 15. In some embodiments, the width W DTI ranges from about 0.1 μm to about 0.5 μm, and the thickness T DTI ranges from about 1.5 μm to about 4 μm. These are merely some non-limiting illustrative examples.

[0051] The color filter layer 212 (212A, 212B, 212C) is disposed above the back surface 220B of the semiconductor 220. The color filter layer 212 allows light components in a specific wavelength band to penetrate and blocks unwanted light components. The pass wavelength band of the color filter layer 212 may be a red wavelength band, a green wavelength band, a blue wavelength band, or a combination thereof, but is not limited thereto. Infrared light can pass through the color filter layer 212 and be detected in the semiconductor substrate 260. The color filter layer 212 may include materials such as pigment-based polymers, dye-based polymers, resins, and another suitable material. As described above, the color filter layers 212A, 212B, 212C may operate in conjunction with the corresponding photosensitive regions 222A, 222B, 222C to provide color-sensitive (e.g., corresponding red, green, and blue) photosensitive regions.

[0052] The microlens layer 210 (210A, 210B, 210C) is disposed on top of the color filter layer 212. The microlens layer 210 has a convex shape in the photosensitive regions 222A, 222B, 222C respectively to improve the light receiving efficiency. The microlens layer 210 can be formed of glass, acrylic polymer or other suitable materials with high transmittance. The microlenses 210A, 210B, 210C are designed to focus visible light onto the corresponding photosensitive regions 222A, 222B, 222C. However, as previously mentioned, it is difficult or impossible to design these microlenses to also focus infrared light onto the underlying infrared sensor 262, due to the difference in wavelengths (e.g., visible light in the range of 400 - 700 nanometers and short-wavelength infrared light in the range of 800 - 1800 nanometers in some non-limiting illustrative embodiments) and the difference in focal lengths (i.e., the distance from the microlens 210 to the visible light photosensitive region 222 is less than the distance from the microlens 210 to the infrared photosensitive region 262). Therefore, the infrared light may be defocused at the infrared photosensitive region 262.

[0053] As Figure 1B shown, to solve this problem, the image sensor device further includes a meta-lens 240A disposed between the light sensor 222 and the infrared light sensor 262. The meta-lens 240A is configured to focus the infrared light irradiated onto the back surface 220B of the photosensitive semiconductor 220 onto the infrared light sensor 262. According to Figure 1B the illustrated embodiment, the imaging device is a face-to-face multi-CIS with a single SWIR, which includes a meta-lens structure in the IMD of the top semiconductor. Advantageously, the meta-lens 240A can be specifically designed for infrared light (e.g., in the range of 800 - 1800 nanometers in some non-limiting illustrative embodiments) and specifically designed for the focal length from the meta-lens 240A to the infrared photosensitive region 262. Further, since the meta-lens is located after the visible light photosensitive region 222 along the optical path (where visible light and infrared light irradiate the side of the device where the microlens 210 is located), the meta-lens does not affect the optical design for visible light detection. This is advantageous in designs for applications that require high spatial resolution for visible light detection, such as in an imaging array where the visible light sensor provides high-resolution daytime imaging while the infrared detection provides lower-resolution night vision, or where the visible light sensor provides high-resolution imaging and the infrared detection is used for range detection. Furthermore, the meta-lens 240A can be made very thin, e.g., formed as an etched pattern in an interface in a semiconductor or dielectric layer, and thus does not affect the compact design of the combined visible light / infrared sensor.

[0054] Reference Figure 1D and Figure 1E , Figure 1D shows a top view and an end view of a meta-lens according to some embodiments, andFigure 1E Further details of the superlens position and design criteria are shown.

[0055] The function of the superlens 240 is to focus the incident light irradiated on the back surface of the photosensitive semiconductor 220 onto the infrared light sensor semiconductor 260. Specifically, the superlens focuses the received infrared light passing through each photosensitive region 222A, 222B, and 222C onto the infrared photosensitive region 262.

[0056] According to an embodiment, the configuration of the superlens includes a plurality of optical meta-elements 241A, 241B, 241C,... 241n arranged in a periodic grid. Each optical meta-element is defined by a width d wome and a height d hOME In addition, the superlens grid is further defined by the spacing d SPOME of the optical meta-elements, and according to the described embodiment, d SPOME is periodic. The optical meta-element width d wome , height d hOME , spacing d SPOME and the grid width W grid determine the wavelength filtering performance of the superlens. Specifically, the optical meta-element width d wome , height d hOME and spacing d SPOME determine the wavelength range of the light transmitted to the infrared photosensitive region 262, while the grid width W grid determines the width of the light beam transmitted to the infrared photosensitive region and the optical alignment of the superlens, photosensitive regions 222A, 222B, 222C and infrared photosensitive regions 262A, 262B, 262C.

[0057] As Figure 1E shown, the focal length d focal of the superlens is defined by the distance from the superlens to the front surface of the infrared light sensor 262, and the optical path length d LPL is defined as the length from the photosensitive region surface (i.e., semiconductor surface 220F) to the front surface 260F of the semiconductor substrate 260.

[0058] According to an embodiment, the focal length d focal is 0.1μm < d focal < 2μm, and the optical meta-element height d hOME > 0.5μm. In addition, 0 < optical meta-element width < 2 * target wavelength / refractive index of the superlens material, 0 < optical meta-element spacing < 2 * wavelength / refractive index of the superlens material. In other words, the grid size is defined as equal to the optical meta-element width + optical meta-element spacing.

[0059] According to some non-limiting illustrative examples, further details of the metalens and its design include the following. The optical path distance depends on the metal layer, and according to one embodiment, it ranges from 3 to 20 μm. The optical path distance can depend on the characteristics of any intervening metal layer (e.g., metallization layers 232 and / or 252) and ranges from 3 to 20 μm according to some non-limiting exemplary embodiments. The metalens assembly 241 in some embodiments can include a polymer or organic material. In some embodiments, all the metalens assemblies 241 have equal height for efficient manufacturing, but this is not necessary. In some embodiments, optical simulation (e.g., optical ray tracing simulation) is used to optimize the metalens 240 (e.g., its dimensions as Figure 1D shown) for the design-based infrared wavelength, the distance from the design-based metalens 240 to the infrared sensor 262, and the refractive index of the intermediate dielectric material. In some embodiments, an etching process is used to define the metalens 240 as an etched pattern in a semiconductor surface or dielectric region. The metalens grid design can vary for different target wavelengths and exclude unwanted wavelengths (e.g., diffract or refract away from the infrared sensor 262). According to one embodiment, the wavelength range of the infrared sensor germanium sensor is 800 nm to 1800 nm. The periodic structure of the metalens 240 in some embodiments enables the configuration of the metalens to prevent unwanted wavelengths from reaching the infrared sensing region. In some embodiments, the metalens grid can be coated with a high refractive index material (High-N material), such as but not limited to TiO2, Ta2O5, or ZrO2, deposited on the surface of the metalens grid.

[0060] Reference Figure 1C , according to some embodiments (300), a cross-sectional view of a face-to-face multi-CIS to single-SWIR is shown, which includes a metalens structure in the inter-metal dielectric (IMD) of the bottom semiconductor. As shown, the image sensor device 300 can be a CMOS image sensor 220 combined with a single-SWIR Ge sensor 260 or a top semiconductor RGB CIS (CMOS image sensor). This top / bottom semiconductor device also includes an RGB microlens layer 210 and a color filter layer 212. Metal wirings / metallization traces 232 and 252 are respectively disposed on the front surfaces of the RGB CIS semiconductor and the SWIR Ge wafer. As shown, the incident visible light is detected by the top semiconductor RGB CIS 220, and the incident SWIR light passes through the top semiconductor RGB CIS 220 and is detected by the SWIR Ge semiconductor 260. According to one embodiment, the top / bottom semiconductor device includes a top wafer and a bottom wafer.

[0061] For simplicity, Figure 1COnly three color photosensitive regions 222A, 222B, and 222C of the image sensor device 300 are shown, but the embodiments of the present invention are not limited thereto. In some embodiments, the photosensitive regions 222A, 222B, and 222C are photosensitive regions for red, green, and blue, respectively. Other combinations of the photosensitive regions 222A, 222B, and 222C can be applied to various embodiments.

[0062] In Figure 1C the semiconductor substrate 220 of the image sensor device 300 includes a photosensitive region 222 for detecting incident light and an isolation region 224 for isolating the photosensitive region 222 from crosstalk. The semiconductor substrate 220 can be, for example, a silicon substrate. In some exemplary examples, the semiconductor substrate 220 includes bulk silicon that can be undoped or doped (e.g., p-type, n-type, or a combination thereof). Other materials suitable for forming the image sensor device 300 can be used. For example, the semiconductor substrate 220 can include materials such as germanium, quartz, sapphire, glass, and / or another suitable material. Alternatively, the semiconductor substrate 220 can be the active layer of a semiconductor-on-insulator (SOI) substrate. As Figure 1C shown, each photosensitive component 222 extends from the front surface 220F of the semiconductor substrate 220.

[0063] The infrared photosensitive component 262 is disposed in the second photosensitive region 262 of the second semiconductor substrate 260 and is located on the front surface of the semiconductor substrate 260. The infrared photosensitive component 262 can include, for example, germanium, silicon germanium, gallium arsenide, indium phosphide, gallium antimonide, cadmium telluride, indium arsenide, indium antimonide, a combination thereof, and / or another suitable material. As Figure 1C shown, each infrared photosensitive component 262 extends from the front surface 260F of the semiconductor substrate 260.

[0064] Further details of the dielectric layer 230 / 250, deep trench isolation (DTI) 224, metal grid or metallization layer 232, color filter layer 212, and microlens layer 210 (210A, 210B, 210C) are described Figure 1B above.

[0065] As Figure 1C shown, the image sensor device includes a superlens 240 disposed between the photosensor 222 and the infrared photosensor 262. The superlens 240 is configured to focus infrared light incident on the back surface 220B of the photosensitive semiconductor 220 onto the infrared photosensor 260. Compared with the superlens structure shown in the IMD of the top semiconductor in Figure 1B According to Figure 1C the embodiment shown, the imaging device is a face-to-face multi-CIS to single-SWIR, which includes a superlens structure in the IMD of the bottom semiconductor.

[0066] Reference Figures 2A to 2B shows various cross-sectional views of an image sensor device structure according to some embodiments. Figure 2A and Figure 2B The difference in the embodiments of is that in the embodiment of Figure 2A the metalens 240 is formed in the surface of the dielectric material 230; while in the embodiment of Figure 2B the metalens 240 is formed in the surface of the dielectric material 250.

[0067] Reference Figure 2A shows a cross-sectional view of a face-to-face single CIS to single SWIR, which includes a metalens structure in the inter-metal dielectric (IMD) of the top semiconductor according to some embodiments (400). Compared with the image sensors described in Figure 1B , Figure 1C and Figure 1D this image sensor includes a configuration that provides single CIS to single SWIR detection. In other words, the bottom infrared light sensor semiconductor includes 3 independent infrared light detection regions, each region being optically aligned with the red, green, and blue photosensitive regions of the corresponding top photosensitive semiconductor. As described in reference Figure 1B the metalens is incorporated into the top semiconductor inter-metal dielectric (IMD) 230.

[0068] Reference Figure 2B shows a cross-sectional view of a face-to-face single CIS to single SWIR, including a metalens structure in the inter-metal dielectric (IMD) of the bottom semiconductor according to some embodiments (500). Compared with the image sensors described in Figure 1B , Figure 1C and Figure 1D this image sensor includes a configuration that provides single CIS to single SWIR detection. In other words, the bottom infrared light sensor semiconductor includes 3 independent infrared light detection regions, each region being optically aligned with the red, green, and blue photosensitive regions of the corresponding top photosensitive semiconductor. As described in reference Figure 1C the metalens is incorporated into the bottom semiconductor IMD (inter-metal dielectric) 250.

[0069] Reference Figures 3A to 3D shows various cross-sectional views of an image sensor device structure according to some embodiments.

[0070] Reference Figure 3A and for comparison also reference Figures 3B to 3D and Figures 4A to 4C , Figure 3A shows a cross-sectional view of the device structure 600, which includes a back-to-back multi-CIS to single SWIR and also includes an application specific integrated circuit (ASIC) 270. Figure 3AEmbodiments of do not include a superlens. As shown, the performance of the face-to-back multi-CIS to single-SWIR and ASIC without a superlens structure may be limited by the defocusing of infrared light at the Ge sensing region.

[0071] Reference Figure 3B , a cross-sectional view of a device structure 700 including a face-to-back multi-CIS to single-SWIR is shown, and includes a superlens structure 240A in the IMD of the top semiconductor, and also includes an ASIC 270.

[0072] With Figure 1B similar, Figure 3B the superlens of embodiments of is integrated into the IMD of the top semiconductor. However, contrary to the face-to-face configuration of Figure 1B , this embodiment includes a face-to-back configuration. In addition, a third ASIC substrate or wafer 270 is bonded to the infrared light sensor semiconductor surface, for example, providing a transistor-based electronic device for operating the combined visible light / infrared light sensor array.

[0073] Reference Figure 3C , a cross-sectional view of a device structure 800 including a face-to-back multi-CIS to single-SWIR is shown, which includes a superlens structure 240B in the IMD of the bottom semiconductor, and an ASIC 270.

[0074] With Figure 1C similar, the superlens is integrated into the IMD of the bottom semiconductor. However, contrary to the face-to-face configuration of Figure 1C , this embodiment includes a face-to-back configuration. Additionally, a third ASIC substrate or wafer 270 is bonded to the infrared light sensor semiconductor surface.

[0075] Reference Figure 3D , a cross-sectional view of a device structure 900 including a face-to-back multi-CIS to single-SWIR is shown, which includes a superlens structure 240C in the semiconductor surface of the bottom semiconductor, and an ASIC 270.

[0076] With Figure 3C similar, the superlens is integrated into the bottom semiconductor. However, compared with the face-to-back configuration of Figure 3C , this embodiment includes etching the superlens 240C into the back of the semiconductor before forming the dielectric layer and the metallization layer. Additionally, a third ASIC substrate or wafer 270 is bonded to the infrared light sensor semiconductor surface.

[0077] Reference Figures 4A to 4C, various cross-sectional views of an image sensor device structure according to still other embodiments are shown. In these embodiments, there are three infrared sensors 262, namely, infrared sensor 262A corresponding to visible light sensor 222A, infrared sensor 262B corresponding to visible light sensor 222B, and infrared sensor 262C corresponding to visible light sensor 222C.

[0078] Reference Figure 4A , a cross-sectional view of a face-to-back multi-CIS to multi-SWIR device structure 1000 is shown, which includes a superlens structure 240A in the IMD of the top semiconductor, and an ASIC 270.

[0079] Similar to the multi-CIS to multi-SWIR imaging device described with reference to Figure 2A , the superlens is integrated into the IMD of the top semiconductor. However, contrary to the face-to-face configuration of Figure 2A , this embodiment includes a face-to-back configuration. Additionally, a third ASIC substrate or wafer 270 is bonded to the infrared light sensor semiconductor surface.

[0080] Reference Figure 4B , a cross-sectional view of a face-to-back multi-CIS to multi-SWIR device structure 1100 is shown, which includes a superlens structure in the IMD of the bottom semiconductor, and an ASIC 270.

[0081] Similar to the multi-CIS to multi-SWIR imaging device described with reference to Figure 2B , the superlens is integrated into the IMD of the bottom semiconductor. However, contrary to the face-to-face configuration of Figure 2B , this embodiment includes a face-to-back configuration. Additionally, a third ASIC substrate or wafer 270 is bonded to the infrared light sensor semiconductor surface.

[0082] Reference Figure 4C , a cross-sectional view of a face-to-back multi-CIS to multi-SWIR device structure 1200 is shown, which includes a superlens structure in the surface of the bottom semiconductor, and an ASIC 270.

[0083] Similar to the multi-CIS to multi-SWIR imaging device described with reference to Figure 4B , this embodiment includes a multi-CIS to single-SWIR configuration, and the superlens is integrated into the bottom semiconductor. This embodiment includes etching the superlens into the back surface of the semiconductor before forming the dielectric layer and the metallization layer. Additionally, a third ASIC substrate or wafer 270 is bonded to the infrared light sensor semiconductor surface.

[0084] In the previous embodiments, the metalens is formed in the dielectric layer 230 or the dielectric layer 250. In the following embodiments, the metalens is formed on the surface of the semiconductor substrate 220 or the semiconductor substrate 260.

[0085] Reference Figures 5A to 5B , various cross-sectional views of an image sensor device structure 1300 according to some embodiments are shown. Specifically, a face-to-back multi-CIS wavelength filter / target wavelength detector according to some embodiments is shown, the wavelength filter / target wavelength detector including a metalens structure 240D in the face of the bottom semiconductor 260.

[0086] As shown, according to this embodiment, similar to that described with reference to Figure 3D and Figure 4C , the metalens 240D is etched into the bottom semiconductor. However, it should be understood that other embodiments may include a metalens incorporated into the dielectric region of the top or bottom semiconductor as previously described.

[0087] In the previous embodiments, the metalens is designed for a single design-based infrared wavelength. In the embodiments described below, the metalens can be designed to direct different design-based infrared wavelengths to different infrared sensors.

[0088] Reference Figures 6A to 6B , various cross-sectional views of an image sensor device structure 1400 according to some embodiments are shown. Specifically, a face-to-back multi-CIS wavelength filter / multi-target wavelength detector according to some embodiments is shown, the wavelength filter / multi-target wavelength detector including a metalens structure 240E in the face of the bottom semiconductor 260. Specifically, light of a first target wavelength (A) is directed to the left infrared sensor, while light of a second target wavelength (B) is directed to the right infrared sensor. The first target wavelength (A) and the second target wavelength (B) are different infrared wavelengths.

[0089] As shown, according to this embodiment, similar to that described with reference to Figure 3D and Figure 4C , the metalens is etched into the bottom semiconductor. However, it should be understood that other embodiments may include a metalens incorporated into the dielectric region of the top or bottom semiconductor as previously described.

[0090] Reference Figures 7A to 7B , various cross-sectional views of an image sensor device structure 1500 according to some embodiments are shown. Specifically, a face-to-back multi-CIS multi-wavelength filter / multi-target wavelength detector is shown, the multi-wavelength filter / multi-target wavelength detector including a metalens structure in the face of the bottom semiconductor. This method is similar to Figures 6A to 6BThe method, but includes four infrared sensors, and the metalens is designed to direct infrared light of a first target wavelength (A), a second target wavelength (B), a third target wavelength (C), and a fourth target wavelength (D) to four different infrared sensors respectively.

[0091] As shown, according to this embodiment, similar to that described with reference Figure 3D and Figure 4C The metalens is etched into the bottom semiconductor. However, it should be understood that other embodiments may include a metalens incorporated into the dielectric region of the top or bottom semiconductor as previously described.

[0092] Reference Figures 8A to 8D , Figures 9A to 9C and Figure 10 show various manufacturing steps of the image sensor device (face-to-face multi-CIS to single-SWIR) as shown in Figure 1B .

[0093] Reference Figures 8A to 8D shows various manufacturing steps of the top semiconductor portion of the metalens structure included in the IMD of the top semiconductor.

[0094] As Figure 8A shown, a semiconductor substrate 220 is provided. For example, the semiconductor substrate 220 may be formed of a semiconductor material of silicon. In some exemplary examples, the semiconductor substrate 220 includes bulk silicon that may be undoped or doped (e.g., p-type, n-type, or a combination thereof). Other materials suitable for forming an image sensor device may be used. For example, the semiconductor substrate 220 may be formed of germanium, quartz, sapphire, glass, and / or another suitable material. Alternatively, the semiconductor substrate 220 may be formed as the active layer of a SOI substrate.

[0095] In addition, as Figure 8A shown, the semiconductor substrate 220 includes a photosensitive region 222 for detecting incident light and an isolation region 224 for isolating the photosensitive region 222 from crosstalk.

[0096] After that, as Figure 8AFurther shown, DTI 224 is formed in the semiconductor substrate 220 to prevent incident light from passing therethrough. Specifically, an etching process is performed on the semiconductor surface of the semiconductor substrate 220 to form deep trenches 224, and then a deposition process is performed to fill the deep trenches 224 with an isolation material to form DTI 224. In the etching process of forming the deep trenches 224, a patterned photoresist (not shown) is used as a mask to cover the photosensitive region 222 of the semiconductor substrate 220, thereby forming deep trenches 224 in the semiconductor substrate 220. The etching process of forming the deep trenches 224 can be, for example, a reactive ion etching process, a plasma etching process, a dry etching process, a wet etching process, and / or another suitable etching process. After the etching process of forming the deep trenches 224, the patterned photoresist (not shown) is stripped.

[0097] Subsequently, an isolation material is filled in the deep trenches 224 to form DTI 224 in the semiconductor substrate 220. The isolation material for forming DTI 224 can be, for example, hafnium oxide, tantalum oxide, zirconium oxide, titanium oxide, aluminum oxide, a high dielectric constant dielectric, a combination thereof, and / or another suitable material. In some embodiments, the isolation material is filled using, for example, a high density plasma chemical vapor deposition (HDPCVD) process, a chemical vapor deposition (CVD) process, a sub-atmospheric CVD (SACVD) process, a spin coating process, a sputtering process, and / or another suitable process, a combination thereof, and / or another suitable process. In some embodiments, a chemical mechanical polishing (CMP) process can be performed to planarize the top surface of DTI 224. The top surface of DTI 224 can be above the semiconductor substrate 220 or coplanar with the back surface 220B of the semiconductor substrate 220.

[0098] In some embodiments, DTI 224 is formed to include multiple layers, including one or more layers of high dielectric constant dielectric materials, such as hafnium oxide, tantalum oxide, zirconium oxide, titanium oxide, aluminum oxide, a combination thereof, and / or the like. Other layers can include, for example, silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, a combination thereof, and / or the like.

[0099] Then, as Figure 8BAs shown, a dielectric region is formed above the front surface 220F of the semiconductor substrate 220. The dielectric layer 230 may be formed to include various transistors 226A, 226B, 226C that are electrically connected to the photosensitive component 222 to collect electrons generated by incident light and / or incident radiation (e.g., visible light and / or infrared radiation). For example, the transistors in the dielectric layer 230 may include a transfer transistor, a reset transistor, a source follower transistor, a row select transistor, and / or a combination of other suitable transistors. For simplicity, the detailed structures of the transistors and other components in the dielectric layer 230 are not shown.

[0100] According to some embodiments, the dielectric layer 230 may also be formed to include an ILD layer (not shown) and an IMD layer (not shown) above the ILD layer (not shown). The ILD layer (not shown) may be formed of PSG, BSG, BPSG, TEOS oxide, or the like. Additionally, contact plugs may be formed in the ILD layer (not shown) for electrically connecting the transistors in the dielectric region 230. The IMD layer (not shown) may include vias and wires; each via may be electrically connected between the wires, and the wires may be electrically connected to the transistors in the dielectric layer 230 to transmit voltage signals.

[0101] As previously referenced Figure 1B As described, the superlens assembly 241 is formed to focus the incident light irradiating on the back surface of the photosensitive semiconductor 220 onto the infrared light sensor semiconductor 260. Specifically, the superlens focuses the received infrared light passing through each photosensitive region 222A, 222B, and 222C onto the infrared photosensitive region 262. According to one embodiment, the superlens optical superassembly is etched into the dielectric region 230.

[0102] Optionally, as Figure 8C shown, the formation of the dielectric region 230 may include a process in the back-end-of-line (BEOL) where metallization layers 232 and dielectric material 230 layers are alternately formed to form a metallization stack above the front surface 220B of the semiconductor substrate 220.

[0103] The dielectric region 230 can be formed of silicon oxide, silicon nitride, silicon oxynitride, high-k dielectric, SOG, and / or another suitable dielectric material. The dielectric layer 230 can be formed through a deposition process, such as a physical vapor deposition (PVD) process, a CVD process, a low-pressure CVD (LPCVD) process, a plasma-enhanced CVD (PECVD) process, an HDPCVD process, a spin coating process, a sputtering process, and / or another suitable process.

[0104] Thereafter, as Figure 8D shown, a color filter layer 212 is formed over the back surface of the semiconductor 220, and then a microlens layer 210 is formed over the color filter layer 212. The color filter layer 212 is formed to allow light components in a specific wavelength band to penetrate and block unwanted light components. The penetration wavelength band of the color filter layer 212 can be a red light wavelength band, a green light wavelength band, a blue light wavelength band, or a combination thereof, but is not limited thereto. Infrared light can pass through the color filter layer 212 and propagate to the infrared light sensor semiconductor substrate 260. The color filter layer 212 can be formed of materials such as pigment-based polymers, dye-based polymers, resins, and other suitable materials, and can be formed by a coating process or other suitable processes. The microlens layer 210 is formed in a convex shape at its light receiving portion to improve the light receiving efficiency. The microlens layer 210 can be formed of glass, acrylic polymer, or other suitable high transmittance materials, and can be formed through a spin coating process, a CVD process, a PVD process, and / or other suitable processes.

[0105] Referring to Figures 9A to 9C , various manufacturing steps of the bottom semiconductor portion are shown.

[0106] According to this embodiment, the semiconductor substrate 260 is formed of silicon, and the infrared light sensitive region 262 is formed of germanium. Next, as Figure 9B shown, a dielectric region 250 is formed on the front surface of the semiconductor substrate 260.

[0107] Figure 9A Manufacturing steps of forming the germanium infrared light sensitive region 262 on the surface of the semiconductor 260 are shown.

[0108] Figure 9B Manufacturing steps of forming the dielectric region 250 on the surface of the semiconductor 260 are shown.

[0109] Figure 9C A variant embodiment is shown, in which the dielectric region 250 includes one or more patterned metallization layers 252 formed as part of a BEOL process.

[0110] Referring to Figure 10, showing the manufacturing steps of bonding the top semiconductor part and the bottom semiconductor part, where the top semiconductor part includes a superlens structure in the IMD of the top semiconductor. According to one embodiment, the bonding process includes bonding through a hybrid (copper - copper & oxide - oxide) bonding process.

[0111] As Figure 10 shown, according to some embodiments, the photosensitive semiconductor 220 dielectric region 230 is bonded to the infrared light sensor semiconductor 260 dielectric region 250 through a bonding process. In some embodiments, the bonding process may include a molecular force bonding process, such as a direct bonding process and an optical fusion bonding process. In another embodiment, the bonding process may include another suitable bonding process known in the art.

[0112] Reference Figures 11A to 11D 、 Figures 12A to 12C and Figure 13 , showing various manufacturing steps of the image sensor device (face - to - face multi - CIS to single - SWIR) as Figure 1C shown.

[0113] Reference Figures 11A to 11D , showing various manufacturing steps of the top semiconductor part.

[0114] Similar Figure 8A , Figure 11A , showing the manufacturing steps of forming a photosensitive region, deep trenches, and transistors in the top semiconductor.

[0115] Similar Figure 8B , Figure 11B , showing the manufacturing steps of forming the dielectric region 230 on the back of the semiconductor 220.

[0116] Similar to Figure 8C , Figure 11C , showing an alternative process where a BEOL process is performed to include a patterned metallization layer 232 in the dielectric layer on the semiconductor 220.

[0117] Similar Figure 8D , Figure 11D , showing the manufacturing steps of forming the microlens 210 and the color filter 212 on the semiconductor 220.

[0118] Reference Figures 12A to 12C , showing various manufacturing steps of the bottom semiconductor part including the superlens structure in the IMD of the bottom semiconductor.

[0119] Similar Figure 9A , Figure 12AShows the manufacturing steps of forming a germanium infrared photosensitive region 262 on the surface of a semiconductor 260.

[0120] Similar Figure 9B , Figure 12B Shows the manufacturing steps of forming a dielectric region 250 on the surface of a semiconductor 260.

[0121] Similar to Figure 9C , Figure 12C Shows an alternative method of performing a BEOL process to form a patterned metallization layer 252, except that here a superlens is etched into the dielectric region 250.

[0122] Similar Figure 10 , referring Figure 13 , shows the manufacturing steps of bonding a top semiconductor portion to a bottom semiconductor portion, the bottom semiconductor portion including a superlens structure in the IMD of the bottom semiconductor.

[0123] It is obvious to those skilled in the art that the above process applies to the manufacturing steps shown in the following figure. The details of the process are not repeated here and below.

[0124] Referring Figures 14A to 14D , Figures 15A to 15C and Figure 16 , shows Figure 2A as shown

[0125] Referring Figures 15A to 15C , shows the various manufacturing steps of the bottom semiconductor portion.

[0126] Referring Figure 16 , shows the manufacturing steps of bonding a top semiconductor portion to a bottom semiconductor portion, the top semiconductor portion including a superlens structure in the IMD of the top semiconductor.

[0127] Referring Figures 17A to 17D , Figures 18A to 18C and Figure 19 , shows Figure 2B as shown

[0128] Referring Figures 17A to 17D , shows the various manufacturing steps of the top semiconductor portion.

[0129] Referring Figures 18A to 18C , shows the various manufacturing steps of the bottom semiconductor portion, the bottom semiconductor portion including a superlens structure in the IMD of the bottom semiconductor.

[0130] Referring Figure 19, showing the manufacturing steps of a top semiconductor portion joined to a bottom semiconductor portion, the bottom semiconductor portion including a superlens structure in the IMD of the bottom semiconductor.

[0131] Reference Figures 20A to 20D , Figures 21A to 21C and Figure 22 , showing various manufacturing steps of an image sensor device (face-to-back multi-CIS to single-SWIR) as shown in Figure 3B .

[0132] Reference Figures 20A to 20D , showing various manufacturing steps of a top semiconductor portion, which includes a superlens structure in the IMD of the top semiconductor.

[0133] Reference Figures 21A to 21C , showing various manufacturing steps of a bottom semiconductor portion.

[0134] Reference Figure 22 , showing the manufacturing steps of joining a top semiconductor portion to a bottom semiconductor portion, the top semiconductor portion including a superlens structure in the IMD of the top semiconductor.

[0135] Reference Figures 23A to 23D , Figures 24A to 24C and Figure 25 , showing various manufacturing steps of an image sensor device (face-to-back multi-CIS to single-SWIR) as shown in Figure 3C .

[0136] Reference Figures 23A to 23D , showing various manufacturing steps of a top semiconductor portion.

[0137] Reference Figures 24A to 24C , showing various manufacturing steps of a bottom semiconductor portion, which includes a superlens structure in the IMD of the bottom semiconductor.

[0138] Reference Figure 25 , showing the manufacturing steps of a top semiconductor portion joined to a bottom semiconductor portion, the bottom semiconductor portion including a superlens structure in the IMD of the bottom semiconductor.

[0139] Reference Figures 26A to 26D , Figures 27A to 27D and Figure 28 , showing various manufacturing steps of an image sensor device (face-to-back multi-CIS to single-SWIR) as shown in Figure 3D .

[0140] Reference Figures 27A to 27D , showing various manufacturing steps of a bottom semiconductor portion, including a superlens structure in the surface of the bottom semiconductor.

[0141] ReferenceFigure 28 , showing the manufacturing steps of a top semiconductor portion joined to a bottom semiconductor portion, the bottom semiconductor portion including a superlens structure in the surface of the bottom semiconductor.

[0142] According to a first embodiment, there is provided an image sensor device, comprising: a first substrate including a first side and a second side opposite the first side, the first substrate including at least one visible light sensor disposed between the first side of the first substrate and the second side of the first substrate. The at least one visible light sensor is configured to detect visible light; a first dielectric region disposed on the first side of the first substrate and including one or more patterned metal layers; a second substrate including a first side and a second side opposite the first side, the second substrate including at least one infrared light sensor disposed between the second side of the second substrate and the first side of the second substrate, the at least one infrared light sensor being configured to detect infrared light; a second dielectric region disposed on the second side of the second substrate and including one or more patterned metallization layers electrically connected to the one or more patterned metal layers of the first dielectric region; a superlens disposed between the at least one visible light sensor and the at least one infrared light sensor, the superlens being configured to focus infrared light incident on the second side of the first substrate onto the at least one infrared light sensor.

[0143] In some embodiments, the image sensor device further includes at least one microlens disposed on a second side of the first substrate, and the at least one microlens is configured to focus visible light onto at least one visible light sensor. In some embodiments, the at least one visible light sensor is a complementary metal oxide semiconductor image sensor and the image sensor device further includes: red, green, and blue color filters disposed on the second side of the first substrate, wherein the at least one visible light sensor includes a red light sensor, a green light sensor, and a blue light sensor. In some embodiments, the metasurface includes a grid structure formed in a second side of the second substrate. In some embodiments, the metasurface includes a grid structure formed in a first side of the first substrate. In some embodiments, the metasurface includes a grid structure formed in a surface of a first dielectric region away from the first substrate. In some embodiments, the metasurface includes a grid structure formed in a surface of a second dielectric region away from the second substrate. In some embodiments, the metasurface includes a grid structure including periodically distributed optical supercomponents, each of the optical supercomponents having a height and a width, and each of the optical supercomponents being separated by a spacing width distance. In some embodiments, the grid size of the metasurface grid structure is: a) defined as the total distance of the optical supercomponent width and the optical supercomponent spacing, and the grid size is greater than 0 and less than twice the target wavelength of the infrared sensor divided by the refractive index of the material of the metasurface; b) each optical supercomponent height is greater than 0.5 μm; and c) the total optical path distance from the visible light sensor to the infrared light sensor is from 3 μm to 20 μm. In some embodiments, the metasurface grid structure includes periodically distributed optical supercomponents, and the optical supercomponent width and spacing provide a focal length substantially equal to the distance from the metasurface grid structure to the infrared light sensor. In some embodiments, the infrared light sensor is configured to detect infrared light having a wavelength in the range of 800 nm to 1800 nm in one of a short wavelength infrared device, a phase detection autofocus device, a wavelength filtering device, a multi-wavelength splitting device, and a spectral analysis device. In some embodiments, the first substrate includes silicon, the at least one visible light sensor includes a complementary metal oxide semiconductor light sensor, and the infrared light sensor includes germanium or a germanium-silicon alloy.

[0144] According to a second embodiment, a method of forming an image sensor device is provided, including: providing a first substrate including at least one visible light sensor configured to detect visible light; forming a first dielectric region including one or more patterned metallization layers on a first side of the first substrate, the first dielectric region having a first side away from the first substrate; providing a second substrate including at least one infrared light sensor configured to detect infrared light; forming a second dielectric region disposed on a first side of the second substrate, the second dielectric region including one or more patterned metallization layers, the second dielectric region having a first side away from the second semiconductor; forming a superlens on the first side of the first substrate, the first side of the second substrate, the first side of the first dielectric region, or the first side of the second dielectric region; bonding the first side of the corresponding first dielectric region and the first side of the second dielectric region, the bonding including electrically connecting one or more patterned metallization layers of the first dielectric region and one or more patterned metallization layers of the second dielectric region.

[0145] In some embodiments, the method further includes forming a superlens in the first side of the first substrate. In some embodiments, the method further includes forming a superlens in the first side of the second substrate. In some embodiments, the method further includes forming a superlens in the first side of the first dielectric region. In some embodiments, the method further includes forming a superlens in the first side of the second dielectric region. In some embodiments, a grid structure is formed in the first side of the second substrate, the first side of the first substrate, the side of the first dielectric region away from the first substrate, or the side of the second dielectric region away from the second substrate. In some embodiments, the superlens grid structure is formed to include periodically distributed optical supercomponents and is formed to include an optical supercomponent width and pitch to provide a focal length substantially equal to the distance from the superlens grid structure to the infrared light sensor.

[0146] According to a third embodiment, an RGB (Red, Green, Blue) CIS (CMOS Image Sensor) device is provided, comprising: a first substrate including a back surface and a front surface opposite the back surface, the first substrate including: a red photosensitive region, a green photosensitive region, and a blue photosensitive region, the red, green, and blue photosensitive regions being disposed between the front surface and the back surface, the photosensitive regions being separated by deep isolation trenches; and a dielectric region extending from the photosensitive regions to the front surface; and a second substrate including a back surface and a front surface opposite the back surface, the second substrate including a radiation sensing detector region disposed between the back surface and the front surface, and a dielectric region extending from the radiation sensing detector region to the back surface, wherein one of the first substrate dielectric region and the second substrate dielectric region includes a superlens grid structure that is optically aligned with each of the red, green, and blue image detection regions to focus incident radiation onto the second substrate radiation sensing detector, the incident radiation passing through the first substrate to reach the second substrate radiation sensing detector, and the first substrate and the second substrate being stacked and bonded to: a) connect the first substrate dielectric region and the second substrate dielectric region, and b) optically align the photosensitive regions and the radiation sensing detector regions.

[0147] The foregoing has outlined the features of several embodiments so that those skilled in the art may better understand the aspects of the present invention. Those skilled in the art should understand that they can readily use the present invention as a basis for designing or modifying other processes and structures to achieve the same purposes and / or achieve the same advantages as the embodiments described herein. Those skilled in the art should also recognize that such equivalent constructs do not depart from the spirit and scope of the present invention, and that they can make various changes, substitutions, and alterations without departing from the spirit and scope of the present disclosure.

Claims

1. An image sensor device, characterized in that, Comprising: A first substrate, including a first side and a second side opposite to the first side, the first substrate including at least one visible light sensor disposed between the first side of the first substrate and the second side of the first substrate, the at least one visible light sensor being configured to detect visible light; A first dielectric region, disposed on the first side of the first substrate and including one or more patterned metal layers; A second substrate, including a first side and a second side opposite to the first side, the second substrate including at least one infrared light sensor disposed between the second side of the second substrate and the first side of the second substrate, the at least one infrared light sensor being configured to detect infrared light; A second dielectric region, disposed on the second side of the second substrate and including one or more patterned metal layers electrically connected to the one or more patterned metal layers of the first dielectric region; And A superlens, disposed between the at least one visible light sensor and the at least one infrared light sensor, the superlens being configured to focus infrared light irradiated onto the second side of the first substrate onto the at least one infrared light sensor.

2. The image sensor device according to claim 1, wherein Further comprising: At least one microlens, disposed on the second side of the first substrate, and the at least one microlens being configured to focus visible light onto the at least one visible light sensor.

3. The image sensor device according to claim 1, wherein The superlens includes a grid structure formed in the second side of the second substrate.

4. The image sensor device according to claim 1, wherein The superlens includes a grid structure formed in the first side of the first substrate.

5. The image sensor device according to claim 1, wherein, The superlens includes a grid structure formed in a surface of the first dielectric region away from the first substrate.

6. The image sensor device according to claim 1, wherein, The superlens includes a grid structure formed in a surface of the second dielectric region away from the second substrate.

7. The image sensor device according to claim 1, characterized in that, The superlens includes a grid structure, the grid structure including periodically distributed optical supercomponents, each of the optical supercomponents having a height and a width, and each of the optical supercomponents being separated by a spacing width distance.

8. The image sensor device according to claim 7, wherein The grid size of the superlens grid structure is: a) Defined as the total distance of the width of the optical supercomponent and the spacing of the optical supercomponents, and the grid size is greater than 0 and less than twice the target wavelength of the infrared light sensor divided by the refractive index of the material of the superlens; b) The height of each optical supercomponent is greater than 0.5 μm; and c) The total optical path distance from the visible light sensor to the infrared light sensor is 3 μm to 20 μm.

9. The image sensor device according to claim 1, wherein The superlens grid structure includes periodically distributed optical supercomponents, and the width and spacing of the optical supercomponents provide a focal length substantially equal to the distance from the superlens grid structure to the infrared light sensor.

10. A complementary metal oxide semiconductor image sensor device for red, green, and blue, characterized in that, Comprising: A first substrate, including a back surface and a front surface opposite to the back surface, the first substrate including: A red photosensitive region, a green photosensitive region, and a blue photosensitive region, the red photosensitive region, the green photosensitive region, and the blue photosensitive region being disposed between the front surface and the back surface, and the red photosensitive region, the green photosensitive region, and the blue photosensitive region being separated by deep isolation trenches; and a dielectric region extending from the red photosensitive region, the green photosensitive region, and the blue photosensitive region to the front surface; and a second substrate including a back surface and a front surface opposite the back surface, the second substrate including a radiation sensing detector region disposed between the back surface and the front surface, and a dielectric region extending from the radiation sensing detector region to the back surface, wherein one of the dielectric region of the first substrate and the dielectric region of the second substrate includes a superlens grid structure optically aligned with each of the red photosensitive region, the green photosensitive region, and the blue photosensitive region to focus incident radiation onto the radiation sensing detector region of the second substrate, the incident radiation passing through the first substrate to the radiation sensing detector region of the second substrate, the first substrate and the second substrate being stacked and bonded to: a) connect the dielectric region of the first substrate and the dielectric region of the second substrate, and b) optically align the red photosensitive region, the green photosensitive region, and the blue photosensitive region with the radiation sensing detector region.

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