High-stability perovskite battery structure

Abstract

The utility model discloses a perovskite cell structure with high stability. The perovskite cell structure comprises a glass substrate; the TCO conducting layer is arranged on the glass substrate, and a plurality of P1 laser streets parallel to the second direction are arranged on the conducting layer; a first charge transport layer disposed on the conductive layer; the perovskite film layer is arranged on the first charge transport layer, is of a discontinuous film layer structure and is provided with a plurality of film layer gaps parallel to the P1 laser scribe lines; the second charge transport layer is arranged on the perovskite film layer, and the material of the second charge transport layer is filled into a film layer gap; the P2 laser scribing channel is arranged corresponding to the film layer gap and cuts off the first charge transfer layer and the second charge transfer layer; the metal back electrode layer is arranged on the second charge transfer layer, and materials of the metal back electrode layer are filled into the P2 laser scribe; the P3 laser scribing channel is parallel to the P2 laser scribing channel; the packaging glass is arranged on the metal back electrode layer; and the sealing adhesive film is arranged between the glass substrate and the packaging glass and is used for isolating water vapor and preventing the water vapor from entering the perovskite battery.

Description

Technical Field

[0001] The utility model relates to the technical field of perovskite batteries, and particularly relates to a perovskite battery structure with high stability. Background Art

[0002] Preparation process of perovskite battery: TCO conductive glass, laser scribing P1, depositing hole transport layer, perovskite layer, electron transport layer, laser scribing P2, depositing back electrode, laser scribing P3, laser scribing P4 and edge cleaning. During the laser scribing process, the laser will etch the perovskite layer, resulting in the efficiency decay of the perovskite around the laser scribing. At the same time, the perovskite at the scribing position is exposed to contact the back electrode, and the metal ions of the back electrode will also react with I in the perovskite - to affect the efficiency and the stability of the perovskite.

[0003] In order to solve the problem of the reaction between metal ions and perovskite, generally, a layer of SnO2 is ALD before depositing the back metal electrode as a barrier layer for metal ions. Although this method can solve the problem of metal ion migration to react with perovskite, it also increases the cost of one layer of coating, and cannot solve the influence of laser scribing on perovskite etching. Content of the Utility Model

[0004] The purpose of the utility model is to: aiming at the problem that laser scribing will have an etching effect on perovskite, which in turn leads to the efficiency decay of perovskite, the utility model designs a perovskite battery structure with high stability, and solves the problem of efficiency decay caused by laser scribing to perovskite.

[0005] To achieve the above purpose, the utility model is realized by the following technical scheme:

[0006] The utility model designs a perovskite battery structure with high stability, and the perovskite battery structure includes:

[0007] A glass substrate, which has a first direction and a second direction perpendicular to each other;

[0008] A TCO conductive layer, which is laminated on the glass substrate, and a plurality of P1 laser scribing tracks parallel to the second direction are arranged on the TCO conductive layer to cut off the TCO conductive layer, so as to be separated into a plurality of conductive modules;

[0009] A first charge transport layer, which is laminated on the TCO conductive layer;

[0010] A perovskite film layer, which is laminated on the first charge transport layer, and the perovskite film layer is set as a discontinuous film layer structure, and has a plurality of film layer gaps parallel to the P1 laser scribing tracks;

[0011] A second charge transport layer, which is stacked on the perovskite film layer, and the material of the second charge transport layer fills into the film layer gaps to form a partial wrap on the perovskite film layer;

[0012] A plurality of P2 laser scribing tracks, which are arranged parallel to the second direction and correspond to the film layer gaps, are used to scribe the first charge transport layer and the second charge transport layer, but not the TCO conductive layer;

[0013] A metal back electrode layer, which is stacked on the second charge transport layer, and the material of the metal back electrode layer fills into the P2 laser scribing tracks;

[0014] A plurality of P3 laser scribing tracks, which are arranged parallel to the P2 laser scribing tracks, are used to scribe the back metal electrode layer, the second charge transport layer, the perovskite film layer and the first charge transport layer, but not the TCO conductive layer;

[0015] An encapsulation glass, which is arranged on the metal back electrode layer;

[0016] And a sealant film, which is arranged between the glass substrate and the encapsulation glass and is used to isolate water vapor and prevent water vapor from entering the perovskite battery.

[0017] Furthermore, a perovskite battery structure with high stability: the width of the film layer gaps is set to be 80 - 120 nm.

[0018] Even further, a perovskite battery structure with high stability: the discontinuous perovskite film layer is prepared by a mask method or obtained by a knife head slit coating with partitions.

[0019] Furthermore, a perovskite battery structure with high stability: the width of the P2 laser scribing tracks is not greater than the width of the film layer gaps.

[0020] Furthermore, a perovskite battery structure with high stability: the width of the P1 laser scribing tracks is set to be 20 - 50 nm.

[0021] Furthermore, a perovskite battery structure with high stability: the width of the P3 laser scribing tracks is set to be 20 - 50 nm.

[0022] The beneficial effects of the present utility model:

[0023] By setting the perovskite film layer as a discontinuous film layer structure and making the P2 laser scribing track coincide with the film layer gap, the present utility model can reduce the etching of the perovskite film layer by one laser (P2 laser scribing), which is beneficial to reducing the efficiency attenuation of perovskite around the laser scribing. By setting a discontinuous film layer structure and filling the film layer gap with the material of the second charge transport layer, the present utility model can achieve the effect of locally wrapping the perovskite, making the P2 laser scribing track not contact the perovskite battery and avoiding the etching of the perovskite by the P2 laser scribing.

[0024] The highly stable perovskite battery structure designed by the present utility model solves the etching effect of the P2 laser scribing on the perovskite and the degradation effect of the metal back electrode on the perovskite without increasing the process flow, improving the efficiency and stability of the perovskite. Brief Description of the Drawings

[0025] In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings required for the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative efforts.

[0026] Figure 1 It is a schematic diagram of the layered structure of a highly stable perovskite battery structure provided by the present utility model;

[0027] Figure 2 It is an exploded view of the formation process of a highly stable perovskite battery structure provided by the present utility model, which can be regarded as the manufacturing flow chart of the perovskite structure;

[0028] Figure 3 It is a schematic diagram of the layered structure of a perovskite battery structure provided for Comparative Example 1.

[0029] Reference Signs in the Drawings: 1 - Glass Substrate, 2 - TCO Conductive Layer, 3 - P1 Laser Scribing Track, 4 - First Charge Transport Layer, 5 - Perovskite Film Layer, 6 - Second Charge Transport Layer, 7 - P2 Laser Scribing Track, 8 - Metal Back Electrode Layer, 9 - P3 Laser Scribing Track, 10 - Encapsulation Glass, 11 - Sealant Film, 21 - Conductive Module. Detailed Embodiments

[0030] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and in no way limits the present invention and its application or use. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts fall within the scope of protection of the present invention.

[0031] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "left", "right", "top", "bottom", etc. is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus cannot be understood as a limitation of the present invention. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. Moreover, the terms "first", "second", etc. are used to distinguish similar objects and do not have to be used to describe a specific order or sequence. It should be understood that such data can be interchanged under appropriate circumstances so that the embodiments of the present invention described herein can be implemented in an order different from those illustrated or described herein.

[0032] Embodiment 1

[0033] As Figures 1-2 shown, in this Embodiment 1, a perovskite battery structure with high stability is designed. The perovskite battery structure includes:

[0034] A glass substrate 1, which has a first direction and a second direction perpendicular to each other;

[0035] A TCO conductive layer 2, which is laminated on the glass substrate 1, and a number of P1 laser scribing tracks 3 (with a width of 30 nm) parallel to the second direction are provided on the TCO conductive layer 2. The TCO conductive layer 2 is scribed by the provided P1 laser scribing tracks 3, so as to be divided into several conductive modules 21;

[0036] A first charge transport layer 4, which is laminated on the TCO conductive layer 2;

[0037] A perovskite film layer 5 is stacked on the first charge transport layer 4, and the perovskite film layer 5 is set as a discontinuous film layer structure by using a mask plate method or a blade slit coating method with partitions, so that there are a number of film layer gaps 51 parallel to the P1 laser scribing track 3 on the perovskite film layer 5 (the film layer gaps 51 do not coincide with the P1 laser scribing track 3), and the width of the film layer gaps 51 is set to 80 nm;

[0038] A second charge transport layer 6 is stacked on the perovskite film layer 5, and the material of the second charge transport layer 6 fills into the film layer gaps 51 until it reaches the first charge transport layer 4, and the filling material forms a partial wrapping effect on the perovskite film layer 5 on both sides of the film layer gaps 51;

[0039] A number of P2 laser scribing tracks 7 are arranged parallel to the second direction and corresponding to the positions of the film layer gaps 51 (the width of the P2 laser scribing tracks 7 is 50 nm, which is not greater than the width of the film layer gaps 51). The first charge transport layer 4 and the second charge transport layer 6 are scribed by the P2 laser scribing tracks 7, but the TCO conductive layer 2 is not scribed. Due to the partial wrapping of the perovskite film layer 5 by the filling material in the film layer gaps 51, the etching of the P2 laser can be avoided, and the efficiency attenuation of the perovskite can be avoided;

[0040] A metal back electrode layer 8 is stacked on the second charge transport layer 6, and the material of the metal back electrode layer 8 fills into the P2 laser scribing tracks 7;

[0041] A number of P3 laser scribing tracks 9, the width of which is set to 30 nm, are arranged parallel to the P2 laser scribing tracks 7. The metal back electrode layer 8, the second charge transport layer 6, the perovskite film layer 5 and the first charge transport layer 4 are scribed by the P3 laser scribing tracks 9, but the TCO conductive layer 2 is not scribed;

[0042] An encapsulation glass 10 is arranged on the metal back electrode layer 8;

[0043] And a sealant film 11 is arranged between the glass substrate 1 and the encapsulation glass 10 to isolate water vapor, so as to prevent water vapor from entering the perovskite battery, thereby affecting the service life and power generation power of the perovskite battery.

[0044] Comparative Example 1

[0045] As Figure 3 shown, Comparative Example 1 provides a perovskite battery structure, and the perovskite battery structure includes:

[0046] A glass substrate 1 having a first direction and a second direction perpendicular to each other;

[0047] The TCO conductive layer 2 is stacked on the glass substrate 1, and a plurality of P1 laser scribing tracks 3 (with a width of 30 nm) parallel to the second direction are provided on the TCO conductive layer 2. The TCO conductive layer 2 is scribed by the provided P1 laser scribing tracks 3, so as to be separated into a plurality of conductive modules 21;

[0048] The first charge transport layer 4 is stacked on the TCO conductive layer 2;

[0049] The perovskite film layer 5 is stacked on the first charge transport layer 4, and the perovskite film layer 5 is a continuous integral film layer structure;

[0050] The second charge transport layer 6 is stacked on the perovskite film layer 5;

[0051] A plurality of P2 laser scribing tracks 7 are arranged parallel to the second direction (the width of the P2 laser scribing tracks 7 is 50 nm). The first charge transport layer 4, the perovskite film layer 5 and the second charge transport layer 6 are scribed by the P2 laser scribing tracks 7, but the TCO conductive layer 2 is not scribed;

[0052] The metal back electrode layer 8 is stacked on the second charge transport layer 6, and the material of the metal back electrode layer 8 fills into the P2 laser scribing tracks 7;

[0053] A plurality of P3 laser scribing tracks 9, with a width of 30 nm, are arranged parallel to the P2 laser scribing tracks 7. The metal back electrode layer 8, the second charge transport layer 6, the perovskite film layer 5 and the first charge transport layer 4 are scribed by the P3 laser scribing tracks 9, but the TCO conductive layer 2 is not scribed;

[0054] The encapsulation glass 10 is arranged on the metal back electrode layer 8;

[0055] And a sealant film 11 is arranged between the glass substrate 1 and the encapsulation glass 10, which is used to isolate water vapor to prevent water vapor from entering the perovskite battery, thereby affecting the service life and power generation efficiency of the perovskite battery.

[0056] The difference between Comparative Example 1 and Example 1 lies in that the perovskite film layer 5 in Comparative Example 1 is a continuous integral structure, which is cut by P2 laser scribing to form a discontinuous structure, while the perovskite film layer 5 in Example 1 is initially set as a discontinuous structure; the method of laser cutting the perovskite film layer 5 by P2 laser scribing in Comparative Example 1 will cause the perovskite film layer 5 to be affected by P2 laser etching, resulting in the problem of perovskite efficiency decay. In this application, the perovskite film layer 5 is initially set as a discontinuous structure, and the P2 laser scribing is made to coincide with the film layer gap 51, that is, the P2 laser scribing does not contact the perovskite film layer 5. Therefore, this application can reduce the etching effect of one laser scribing (P2 laser) on the perovskite, avoid efficiency decay, and contribute to the improvement of efficiency.

[0057] Test: The perovskite battery structures of Example 1 and Comparative Example 1 were tested for efficiency. The results show that the efficiency of Example 1 is about 1.2% higher than that of Comparative Example 1. After 1000 hours of high temperature and high humidity, the efficiency of Example 1 is about 5% higher than that of Comparative Example 1. This shows that the structural design of this application can avoid the decay of battery efficiency. At the same time, after the "1000-hour high temperature and high humidity" stability test, its efficiency is higher than that of Comparative Example 1, indicating that the stability of the perovskite battery structure designed in this application is better.

[0058] The above are the preferred embodiments of the present utility model, which are only used to explain the present utility model and are not used to limit the present utility model. Any obvious changes or variations derived from the technical solutions of the present utility model are still within the protection scope of the present utility model.

Claims

1. A perovskite battery structure with high stability, characterized in that, The perovskite solar cell structure includes: A glass substrate (1) having a first direction and a second direction perpendicular to each other; A TCO conductive layer (2) laminated on the glass substrate (1), and a plurality of P1 laser scribing tracks (3) parallel to the second direction are provided on the TCO conductive layer (2) to scribe the TCO conductive layer (2) and thus divide it into a plurality of conductive modules (21); A first charge transport layer (4) laminated on the TCO conductive layer (2); A perovskite film layer (5) laminated on the first charge transport layer (4), and the perovskite film layer (5) is set as a discontinuous film layer structure with a plurality of film layer gaps (51) parallel to the P1 laser scribing tracks (3) thereon; A second charge transport layer (6) laminated on the perovskite film layer (5), and the material of the second charge transport layer (6) fills into the film layer gaps (51) to form a partial wrap of the perovskite film layer (5); A plurality of P2 laser scribing tracks (7) parallel to the second direction and corresponding to the film layer gaps (51) are provided for scribing the first charge transport layer (4) and the second charge transport layer (6); A metal back electrode layer (8) laminated on the second charge transport layer (6), and the material of the metal back electrode layer (8) fills into the P2 laser scribing tracks (7); A plurality of P3 laser scribing tracks (9) are provided parallel to the P2 laser scribing tracks (7) for scribing the metal back electrode layer (8), the second charge transport layer (6), the perovskite film layer (5) and the first charge transport layer (4); An encapsulation glass (10) provided on the metal back electrode layer (8); And a sealant film (11) provided between the glass substrate (1) and the encapsulation glass (10) for isolating water vapor and preventing it from entering the perovskite solar cell.

2. A perovskite battery structure with high stability according to claim 1, characterized in that, The width of the film layer gap (51) is set to be 80 - 120 nm.

3. A high-stability perovskite solar cell structure according to claim 1 or 2, characterized in that The discontinuous perovskite film layer (5) is prepared by a mask method or obtained by knife head slit coating with partitions.

4. A perovskite battery structure with high stability according to claim 1, characterized in that, The width of the P2 laser scribing track (7) is not greater than the width of the film layer gap (51).

5. A perovskite battery structure with high stability according to claim 1, characterized in that, The width of the P1 laser scribing track (3) is set to be 20 - 50 nm.

6. A high-stability perovskite solar cell structure according to claim 1, characterized in that, The width of the P3 laser scribing track (9) is set to be 20 - 50 nm.

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