Solar cell, power utilization device and power generation device

Abstract

The utility model discloses a solar cell, a power utilization device and a power generation device. The solar cell comprises a substrate, a first conductive layer, a functional layer and a second conductive layer. The first conductive layer is arranged on the substrate, and the first gaps penetrate through the first conductive layer. The functional layer is arranged on the first conducting layer, the functional layer at least comprises a light absorption layer, a plurality of second gaps penetrate through the functional layer and the first conducting layer, the first conducting layer is provided with a protruding part, and the protruding part is provided with a first face facing the first part and a second face facing the second part; the second conductive layer is arranged on the functional layer, the second conductive layer is electrically connected to the first conductive layer through an electric connecting part filled in the second gap, the electric connecting part is electrically connected to the first surface and the second surface, a plurality of third gaps penetrate through the second conductive layer and the functional layer, and the first gap, the second gap and the third gaps are arranged in a staggered manner. Good ohmic contact is formed between the second conductive layer and the first conductive layer, the contact resistance is reduced, and the performance of the solar cell is improved.

Description

Technical Field

[0001] The present application relates to the technical field of solar cells, and particularly to a solar cell, an electrical device, and a power generation device. Background Art

[0002] A perovskite solar cell module is a solar cell module that uses a perovskite-type organometallic halide semiconductor as a light-absorbing material. It is a new generation of solar cell module with the characteristic of high photoelectric conversion efficiency. In the prior art, during the preparation process of the perovskite solar cell module, it is necessary to conduct the second conductive layer and the transparent conductive glass after grooving to form an ohmic contact. The contact resistance of the ohmic contact is one of the factors affecting the performance of the solar cell. Summary of the Utility Model

[0003] In view of the above technical problems, the present application provides a solar cell, an electrical device, and a power generation device, which can reduce the contact resistance to improve the performance of the solar cell.

[0004] The first technical solution adopted by the present application is: to provide a solar cell, which includes a substrate, a first conductive layer, a functional layer, and a second conductive layer. The first conductive layer is disposed on the substrate, and a plurality of first gaps penetrate through the first conductive layer; the functional layer is disposed on the side of the first conductive layer away from the substrate, and the functional layer at least includes a light absorption layer. A plurality of second gaps penetrate through the functional layer and the first conductive layer. The second gap has a first part and a second part that are communicated with each other. The first part penetrates through the functional layer, and the second part penetrates through the first conductive layer. The first conductive layer has protrusions on both opposite sides facing the second gap. The protrusion has a first surface facing the first part and a second surface facing the second part; the second conductive layer is disposed on the side of the functional layer away from the first conductive layer, and the second conductive layer is electrically connected to the first conductive layer through an electrical connection part filled in the second gap. The electrical connection part is electrically connected to the first surface and the second surface. A plurality of third gaps at least penetrate through the second conductive layer, and the first gap, the second gap, and the third gap are arranged in a staggered manner.

[0005] In the technical solution of the embodiment of the present application, the first gap penetrates the first conductive layer, the second gap penetrates the functional layer and the first conductive layer, and the third gap penetrates at least the second conductive layer and the functional layer. The first gap, the second gap and the third gap are staggered to form three scribe grooves P1, P2, and P3 of the solar cell respectively, so as to form a series structure of multiple sub-cells. Among them, the second gap of this solution penetrates the functional layer and the first conductive layer at the same time, specifically: the first part of the second gap penetrates the functional layer, and the second part of the second gap penetrates the first conductive layer, forming a second gap similar to a step, so that the first conductive layer has protrusions on both sides of the opposite arrangement facing the second gap. The protrusion has a first surface facing the first part and a second surface facing the second part. The second conductive layer is located on the functional layer and is electrically connected to the first surface and the second surface through the electrical connection part filled in the second gap. The electrical connection part of the second conductive layer forms an ohmic contact with the first conductive layer through the first surface and the second surface, which increases the area of the ohmic contact, improves the open circuit voltage, filling factor and photoelectric conversion efficiency of the solar cell, and thus improves the performance of the solar cell.

[0006] In some embodiments, the conductive material of the electrical connection portion includes one of Ag, Cu, C, Au, Al, ITO, AZO, BZO, and IZO.

[0007] In some embodiments, a surface of the substrate facing the second gap has a barrier layer, and the barrier layer is located between the substrate and the electrical connection portion.

[0008] In the technical solution of the embodiment of the present application, a barrier layer is provided on the surface of the substrate facing the second gap to block the alkali metal ions inside the substrate from diffusing into the light absorbing layer, thereby weakening the damage of the alkali metal ions to the light absorbing layer, improving the stability of the solar cell, and thus improving the performance of the solar cell.

[0009] In some embodiments, the barrier layer includes one of metal or non-metal oxides, nitrides, carbides and sulfides, and carbon materials and their derivatives; or the barrier layer includes several stacked layers, each of which independently includes one of metal or non-metal oxides, nitrides, carbides and sulfides, and carbon materials and their derivatives.

[0010] In the technical solution of the embodiment of the present application, the barrier layer made of the above-mentioned material can block the alkali metal ions inside the substrate from diffusing to the light absorbing layer, weaken the damage of the alkali metal ions to the light absorbing layer, improve the stability of the solar cell, and thus improve the performance of the solar cell.

[0011] In some embodiments, the metal or non-metal oxide comprises SiO x 、AlO x 、ZrO、MoOx , one of PbO, Sb2O4, CoO, B2O3, MgO, CuO, BiO3, metal or non-metal nitrides include SiN x , one of AlN, BN, Mg3N2, CrN, ZrN, metal or non-metal carbides include one of CaC2, Cr4C3, TaC, VC, ZrC, WC, B4C, SiC, metal or non-metal sulfides include one of Al2S3, PbS, B2S3, SiS2, carbon materials and their derivatives include one of graphene and its derivatives.

[0012] In the technical solution of the embodiment of the present application, the barrier layer made of the above materials can block the diffusion of alkali metal ions inside the substrate to the light absorption layer, weaken the damage of alkali metal ions to the light absorption layer, improve the stability of the solar cell, and thus improve the performance of the solar cell.

[0013] In some embodiments, the thickness of the barrier layer is 1 nm to 30 nm.

[0014] In the technical solution of the embodiment of the present application, the barrier layer within the above thickness range can block the diffusion of alkali metal ions inside the substrate to the light absorption layer, weaken the damage of alkali metal ions to the light absorption layer, improve the stability of the solar cell, and thus improve the performance of the solar cell.

[0015] In some embodiments, the surface of the functional layer facing the second gap has an isolation layer, and the isolation layer is located between the functional layer and the electrical connection part.

[0016] In the technical solution of the embodiment of the present application, by providing an isolation layer on the surface of the functional layer facing the second gap, and the isolation layer is located between the functional layer and the electrical connection part, it is possible to prevent the large-area degradation of the solar cell caused by chemical reactions resulting from the direct contact between the light absorption layer and the electrical connection part. The present application can improve the stability of the solar cell by providing the isolation layer, and thus improve the performance of the solar cell.

[0017] In some embodiments, the isolation layer includes one of a water and oxygen barrier layer or a quantum dot layer.

[0018] In the technical solution of the embodiment of the present application, the water and oxygen barrier layer or the quantum dot layer is located on the surface of the functional layer facing the second gap to protect the surface of the functional layer facing the second gap, and can prevent the large-area degradation of the solar cell caused by chemical reactions resulting from the direct contact between the light absorption layer and the electrical connection part and the damage of water, oxygen, etc. in the external environment to the light absorption layer. The present application can improve the stability of the solar cell by providing the isolation layer, and thus improve the performance of the solar cell.

[0019] In some embodiments, the width of the first part is 30 μm to 150 μm, the width of the second part is 15 μm to 100 μm, and / or the width of the first surface is 1 μm to 50 μm.

[0020] In the technical solution of the embodiment of the present application, the widths of the first part and the second part and / or the width of the first surface are within the above ranges, which is beneficial for the second conductive layer to form an ohmic contact with the first conductive layer through the first surface and the second surface, increasing the area of the ohmic contact, improving the open circuit voltage, fill factor and photoelectric conversion efficiency of the solar cell, and thus improving the performance of the solar cell.

[0021] In some embodiments, the width of the first part is greater than the width of the second part.

[0022] In some embodiments, the light absorption layer includes a perovskite material.

[0023] The second technical solution adopted in the present application is: to provide an electrical device including the solar cell as described above.

[0024] Since the device of the present application includes the solar cell provided by the present application, it has at least the same advantages as the solar cell.

[0025] The third technical solution adopted in the present application is: to provide a power generation device including the solar cell as described above.

[0026] Since the device of the present application includes the solar cell provided by the present application, it has at least the same advantages as the solar cell.

[0027] The above description is only an overview of the technical solution of the present application. In order to be able to understand the technical means of the present application more clearly, it can be implemented according to the content of the specification. And in order to make the above and other purposes, features and advantages of the present application more obvious and understandable, the specific embodiments of the present application are given below. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] By reading the following detailed description of the preferred embodiments, various other advantages and benefits will become clear to those of ordinary skill in the art. The drawings are only for the purpose of showing the preferred embodiments and are not considered to be a limitation of the present application. And in all the drawings, the same reference numerals are used to represent the same components. In the drawings:

[0029] Figure 1 is a schematic structural diagram of a solar cell in the related art;

[0030] Figure 2 is a schematic structural diagram of a solar cell according to some embodiments of the present application;

[0031] Figure 3Schematic diagram of the partial structure of a solar cell according to some embodiments of the present application;

[0032] Figure 4 Schematic diagram of the partial structure of a solar cell according to some embodiments of the present application;

[0033] Figure 5 Schematic diagram of the structure of an electrical device according to some embodiments of the present application;

[0034] Figure 6 Schematic diagram of the structure of a power generation device according to some embodiments of the present application;

[0035] Figure 7 Top view structure schematic diagram of a solar cell according to some embodiments of the present application;

[0036] Figure 8 Cross-sectional structure schematic diagram of a solar cell according to some embodiments of the present application;

[0037] Figure 9 Schematic diagram of the partial structure of a solar cell according to some embodiments of the present application.

[0038] Marking description:

[0039] Solar cell 100, substrate 101, first conductive layer 102, functional layer 103, second conductive layer 104, first gap 201, light absorption layer 1032, second gap 202, first part 2021, second part 2022, protrusion 204, first surface 2041, second surface 2042, third gap 203, first transmission layer 1031, second transmission layer 1033, electrical connection part 1042, barrier layer 1011, isolation layer 1034, electrical device 1000, power generation device 2000. Detailed implementation manners

[0040] Hereinafter, embodiments of the technical solutions of the present application will be described in detail with reference to the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solutions of the present application, and thus are only examples and cannot be used to limit the protection scope of the present application.

[0041] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the technical field to which this application belongs; the terms used herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" and any variations thereof in the specification and claims of this application and the above drawings are intended to cover non-exclusive inclusion.

[0042] In the description of the embodiments of the present application, technical terms such as "first" and "second" are only used to distinguish different objects, and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity, specific order or primary-secondary relationship of the indicated technical features. In the description of the embodiments of the present application, the meaning of "a plurality" is more than two, unless otherwise specifically defined.

[0043] Referring to "embodiments" herein means that the specific features, structures or characteristics described in connection with the embodiments may be included in at least one embodiment of the present application. The phrase appearing in various positions in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. Those skilled in the art explicitly and implicitly understand that the embodiments described herein may be combined with other embodiments.

[0044] In the description of the embodiments of the present application, the term "and / or" is merely an associative relationship describing associated objects, indicating that three relationships may exist. For example, A and / or B may represent: A exists alone, A and B exist simultaneously, and B exists alone. In addition, the character " / " in this article generally represents an "or" relationship between the associated objects before and after.

[0045] In recent years, perovskite solar cell modules have become a research hotspot in the scientific field worldwide. Their raw material sources are wide and inexpensive, the preparation process is simple, and they can be prepared on flexible substrates. They are currently the most promising emerging photovoltaic devices. Usually, when forming the tandem structure of perovskite cells, it is necessary to scribe different film layers at different positions. The scribing of the functional layer can be completed by masking, chemical etching, mechanical or laser scribing. Referring to Figure 1 , scribing different film layers at different positions can be divided into:

[0046] P1 process: The bottom first conductive layer is divided by equipment. After the first conductive layer is prepared, scribing is performed by relevant equipment before preparing the first transport layer (one of the hole transport layer or the electron transport layer), the light absorption layer and the second transport layer (the other of the hole transport layer or the electron transport layer) to form independent first conductive layer substrates.

[0047] P2 process: Expose the first conductive layer substrate to provide a channel for connecting the positive and negative electrodes of adjacent sub-cells. After the preparation of the first transport layer, the light absorption layer and the second transport layer is completed, the first transport layer, the light absorption layer and the second transport layer are etched by relevant equipment to expose the first conductive layer, so that the positive and negative electrodes between the sub-cells can be connected to each other in the next electrode evaporation process. The P2 process is to scribe at least the first transport layer, the light absorption layer and the second transport layer above the first conductive layer before the deposition of the second conductive layer. The first transport layer, the light absorption layer and the second transport layer can be collectively referred to as the functional layer.

[0048] P3 process: The positive electrodes of adjacent sub-cells are separated, that is, after the deposition of the second conductive layer, at least the second conductive layer is scribed. In some embodiments, the film layers scribed in the P3 process may include a functional layer and a second conductive layer.

[0049] Using the three processes of P1, P2, and P3, three scribing grooves are respectively formed on the perovskite solar cell module to form a series structure of multiple sub-cells. Among them, the P2 process is the key process. This process is to form a channel for connecting the second conductive layer and the first conductive layer.

[0050] For the channel prepared by the ideal P2 process, the material above the first conductive layer is completely removed without damaging the first conductive layer. However, in actual processing, due to the Gaussian distribution of the laser beam and the inorganic transport material that is difficult to remove, the difficulty of preparing the ideal P2 channel increases, and its laser processing parameter window is also very narrow, requiring a higher-precision laser scribing device.

[0051] To solve the above technical problems, the present application proposes a solar cell 100.

[0052] The above three processes of P1, P2, and P3 respectively form three scribing grooves. The "first gap" described in the solution of the present application is the scribing groove generated by the P1 process, the "second gap" described in the solution of the present application is the scribing groove generated by the P2 process, and the "third gap" described in the solution of the present application is the scribing groove generated by the P3 process.

[0053] Refer to Figure 2 and Figure 3, the solar cell 100 includes a substrate 101, a first conductive layer 102, a functional layer 103, and a second conductive layer 104. The first conductive layer 102 is disposed on a side of the substrate 101 away from the substrate 101, and a plurality of first gaps 201 penetrate through the first conductive layer 102; the functional layer 103 is disposed on the first conductive layer 102, and the functional layer 103 at least includes a light absorption layer 1032. A plurality of second gaps 202 penetrate through the functional layer 103 and the first conductive layer 102. The second gaps 202 have a first portion 2021 and a second portion 2022 that communicate with each other. The first portion 2021 penetrates through the functional layer 103, and the second portion 2022 penetrates through the first conductive layer 102. The first conductive layer 102 has protrusions 204 on both opposite sides facing the second gap 202. The protrusion 204 has a first surface 2041 facing the first portion 2021 and a second surface 2042 facing the second portion 2022; the second conductive layer 104 is disposed on a side of the functional layer 103 away from the first conductive layer 102. The second conductive layer 104 is electrically connected to the first conductive layer 102 through an electrical connection portion 1042 filled in the second gap 202. The electrical connection portion 1042 is electrically connected to the first surface 2041 and the second surface 2042. A plurality of third gaps 203 at least penetrate through the second conductive layer 104. The first gap 201, the second gap 202, and the third gap 203 are arranged in a staggered manner.

[0054] In the technical solution of the embodiment of the present application, the first gap 201 penetrates through the first conductive layer 102, the second gap 202 penetrates through the functional layer 103 and the first conductive layer 102, the third gap 203 at least penetrates through the second conductive layer 104. The first gap 201, the second gap 202, and the third gap 203 are arranged in a staggered manner to respectively form three scribing grooves P1, P2, and P3 of the solar cell 100, so as to form a series structure of a plurality of sub-cells. Among them, the second gap 202 of the present solution penetrates through the functional layer 103 and also penetrates through the first conductive layer 102. Specifically, the first portion 2021 of the second gap 202 penetrates through the functional layer 103, and the second portion 2022 of the second gap 202 penetrates through the first conductive layer 102, forming a second gap 202 similar to a stepped shape, such that the first conductive layer 102 has protrusions 204 on both opposite sides facing the second gap 202. The protrusion 204 has a first surface 2041 facing the first portion 2021 and a second surface 2042 facing the second portion 2022. The second conductive layer 104 is electrically connected to the first conductive layer 102 through an electrical connection portion 1042 filled in the second gap 202. The electrical connection portion 1042 is electrically connected to the first surface 2041 and the second surface 2042. The electrical connection portion 1042 of the second conductive layer 104 forms an ohmic contact with the first conductive layer 102 through the first surface 2041 and the second surface 2042, increasing the area of the ohmic contact, improving the open-circuit voltage, fill factor, and photoelectric conversion efficiency of the solar cell 100, thereby improving the performance of the solar cell.

[0055] In addition, during the process of forming the P2 scribing groove for the second gap 202, a high-intensity laser penetrates through the functional layer 103 and also penetrates through the first conductive layer 102. The laser used for laser scribing has a Gaussian distribution characteristic. The Gaussian distribution is also known as the "normal distribution". The curve of the Gaussian distribution is bell-shaped, with low ends, high in the middle, and symmetric on both sides, and is also called the "bell curve". The intensity of the laser beam of this characteristic is relatively high at the part that penetrates the first conductive layer 102, and the intensity of the laser beam of this characteristic is relatively low at the part that is far from the first conductive layer 102 and penetrates the functional layer 103. Thus, a second gap 202 similar to a stepped shape is formed, so that the first conductive layer 102 has protrusions 204 on both relatively arranged sides facing the second gap 202. The protrusion 204 has a first surface 2041 facing the first part 2021 and a second surface 2042 facing the second part 2022. That is, under the high-intensity laser scribing, the first conductive layer 102 exposes the first surface 2041 and the second surface 2042. When the second conductive layer 104 disposed on the functional layer 103 forms an ohmic contact with the first conductive layer 102 through the second gap 202, in other words, the electrical connection portion 1042 of the second conductive layer 104 forms an ohmic contact with the first conductive layer 102 through the first surface 2041 and the second surface 2042. On the one hand, since there is no functional layer 103 on the first surface 2041 of the first conductive layer 102, the ohmic contact area is increased. On the other hand, the high-intensity laser scribing removes the residue particles on the first surface 2041 and the second surface 2042 more cleanly. These two aspects work together to reduce the contact resistance between the second conductive layer 104 and the first conductive layer 102, further strengthening the ohmic contact, optimizing the open-circuit voltage, fill factor, and photoelectric conversion efficiency of the solar cell 100, thereby improving the performance of the solar cell. The P2 channel (i.e., the above-mentioned second gap 202) prepared by the technical solution of the present application also solves the problem that the processing parameter window of the P2 channel prepared by the traditional P2 process is relatively narrow. The traditional P2 process needs to modulate the laser intensity between completely removing the first transmission layer and not damaging the first conductive layer. The laser intensity of the technical solution of the present application can be between removing the first conductive layer 102 and the substrate 101, and there is a large laser parameter adjustment window, and it does not depend on high-precision laser scribing equipment.

[0056] The substrate 101 serves as the support of the solar cell 100, and the light transmittance and strength both need to meet the requirements of the solar cell 100, including but not limited to glass or PET (polyethylene terephthalate), PI (polyimide), etc.

[0057] The first conductive layer 102 includes a transparent conductive layer, and the function of the transparent conductive layer is to extract photo-generated carriers. Commonly used ones include FTO (F-doped tin oxide), and in addition, there are also ITO (In-doped tin oxide), AZO (Al-doped zinc oxide), etc. The first conductive layer 102 can select one or a combination of multiple ones among them.

[0058] The light absorption layer 1032 includes a perovskite material, and its component general formula is ABX3 or A2CDX6. Among them, A includes inorganic or organic or organic-inorganic hybrid cations, including MA + (methylammonium cation), FA + (formamidinium cation), Cs + , Rb + at least one of them; B includes inorganic cations, including Pb 2+ , Sn 2+ at least one of them; C includes inorganic or organic or organic-inorganic hybrid cations, including Ag + , Cu + , Au + , FA + , GA + (guanidinium cation); D includes inorganic cations, including Bi 3+ , Sb 3+ and In 3+ at least one of them; X includes inorganic anions, including Cl - , Br - , I - at least one of them.

[0059] The functional layer 103 further includes a first transport layer 1031 located between the light absorption layer 1032 and the first conductive layer 102, and a second transport layer 1033 located between the light absorption layer 1032 and the second conductive layer 104. The first transport layer 1031 includes one of a hole transport layer or an electron transport layer, and the second transport layer 1033 includes the other of a hole transport layer or an electron transport layer.

[0060] The electron transport layer undertakes the functions of extracting electrons and blocking holes, and is generally one or more of TiO2, SnO2, ZnO, [6,6]-phenyl-C61-butyric acid methyl ester (PC 61 BM), [6,6]-phenyl-C71-butyric acid methyl ester (PC 71 BM), and C60.

[0061] The hole transport layer is one or more of materials such as 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro-OMeTAD), poly(triarylamine) (PTAA), NiOx, poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS), WO3, organic self-assembled small molecule SAMs, etc. that can transport holes and block electrons.

[0062] The material of the second conductive layer 104 is an organic or inorganic or organic-inorganic hybrid conductive material, including but not limited to one or more of the following materials: Ag, Cu, C, Au, Al, ITO, AZO, BZO, IZO.

[0063] In other embodiments, referring to Figure 4 , the second gap 202 penetrates through the functional layer 103 and intermittently penetrates through the first conductive layer 102. When the second gap 202 of this solution penetrates through the functional layer 103 using high-intensity laser, the first conductive layer 102 is intermittently removed. Specifically: the first part 2021 of the second gap 202 penetrates through the functional layer 103, and the second part 2022 of the second gap 202 intermittently penetrates through the first conductive layer 102. This exposes multiple sides of the first conductive layer 102. On the one hand, it increases the area of the ohmic contact between the second conductive layer 104 and the first conductive layer 102, reduces the contact resistance between the second conductive layer 104 and the first conductive layer 102, further strengthens the ohmic contact, and significantly improves the open-circuit voltage, fill factor, and photoelectric conversion efficiency of the solar cell 100; on the other hand, it is beneficial to shorten the width of the required second gap 202, reduce the dead zone area, and effectively reduce the efficiency loss during the area amplification process of the solar cell 100. In some embodiments, the second part 2022 may include multiple sub-gaps, the width Y1 of the sub-gaps ranges from 10 μm to 40 μm, and the spacing Y2 between the sub-gaps ranges from 10 μm to 70 μm. It should be noted that the widths Y1 of the sub-gaps may be the same or different, and the spacings Y2 between the sub-gaps may be the same or different. The specific set values can be flexibly adjusted according to actual needs.

[0064] It can be understood that in combination with referring to Figure 4 and Figure 9 , the width Y1 of the sub-gap refers to the distance between the two opposite second surfaces 2042 of each sub-gap; the spacing Y2 between the sub-gaps refers to the distance between the adjacent two second surfaces 2042 of adjacent sub-gaps.

[0065] In some embodiments, the conductive materials of the electrical connection parts 1042 each independently include one of Ag, Cu, C, Au, Al, ITO, AZO, BZO, IZO.

[0066] In some embodiments, the surface a of the substrate 101 facing the second gap 202 has a barrier layer 1011, and the barrier layer 1011 is located between the substrate 101 and the electrical connection portion 1042.

[0067] In the technical solution of the embodiment of the present application, by providing the barrier layer 1011 on the surface a of the substrate 101 facing the second gap 202, the diffusion of alkali metal ions inside the substrate 101 to the light absorption layer 1032 is blocked, thereby weakening the damage of the alkali metal ions to the light absorption layer 1032, improving the stability of the solar cell 100, and thus improving the performance of the solar cell 100.

[0068] In some embodiments, the barrier layer 1011 includes one of metal or non-metal oxides, nitrides, carbides, sulfides, carbon materials and their derivatives; or the barrier layer 1011 includes several stacked layers, and each layer independently includes one or several of metal or non-metal oxides, nitrides, carbides, sulfides, carbon materials and their derivatives.

[0069] In the technical solution of the embodiment of the present application, the barrier layer 1011 made of the above materials can block the diffusion of alkali metal ions inside the substrate 101 to the light absorption layer 1032, weaken the damage of the alkali metal ions to the light absorption layer 1032, improve the stability of the solar cell 100, and thus improve the performance of the solar cell 100.

[0070] In some embodiments, the metal or non-metal oxide includes SiO x 、AlO x 、ZrO, MoO x 、PbO, Sb2O4, CoO, B2O3, MgO, CuO, BiO3, the metal or non-metal nitride includes SiN x 、AlN, BN, Mg3N2, CrN, ZrN, the metal or non-metal carbide includes CaC2, Cr4C3, TaC, VC, ZrC, WC, B4C, SiC, the metal or non-metal sulfide includes Al2S3, PbS, B2S3, SiS2, and the carbon material and its derivative includes one of graphene and its derivatives.

[0071] In the technical solution of the embodiment of the present application, the barrier layer 1011 made of the above materials can block the diffusion of alkali metal ions inside the substrate 101 to the light absorption layer 1032, weaken the damage of the alkali metal ions to the light absorption layer 1032, improve the stability of the solar cell 100, and thus improve the performance of the solar cell 100.

[0072] In some embodiments, the thickness of the barrier layer 1011 is 1 nm to 30 nm.

[0073] In the technical solution of the embodiment of the present application, the barrier layer 1011 within the above thickness range can block the diffusion of alkali metal ions inside the substrate 101 to the light absorption layer 1032, weaken the damage of the alkali metal ions to the light absorption layer 1032, improve the stability of the solar cell 100, and thus improve the performance of the solar cell 100. The thickness of the barrier layer can be 1nm, 1.5nm, 5nm, 10nm, 15nm, 18nm, 22nm, 28nm, 30nm, etc., or a range composed of any two of the above values. For example, it can be 1nm to 10nm, 10nm to 22nm, 22nm to 30nm, 5nm to 18nm, 1.5nm to 15nm, etc.

[0074] In some embodiments, the surface b of the functional layer 103 facing the second gap 202 has an isolation layer 1034, and the isolation layer 1034 is located between the functional layer 103 and the electrical connection portion 1042.

[0075] In the technical solution of the embodiment of the present application, by providing the isolation layer 1034 on the surface b of the functional layer 103 facing the second gap 202, and the isolation layer 1034 is located between the functional layer 103 and the electrical connection portion 1042, it is possible to prevent the situation that the solar cell 100 is degraded on a large scale due to the chemical reaction caused by the direct contact between the light absorption layer 1032 and the electrical connection portion 1042. By providing the isolation layer 1034 in the present application, the stability of the solar cell 100 can be improved, and thus the performance of the solar cell 100 is improved.

[0076] Among them, when scribing in the thickness direction X of the functional layer 103 to form the second gap 202, the second gap 202 will cause the light absorption layer 1032 of the functional layer 103 to be exposed and directly contact the electrical connection portion 1042 of the second conductive layer 104. The direct contact between the light absorption layer 1032 and the electrical connection portion 1042 will cause a chemical reaction, resulting in many defects such as vacancies in the light absorption layer 1032. As the chemical reaction penetrates continuously, it will cause the solar cell 100 to short-circuit, and the reaction will accelerate under the long-term working environment, causing the solar cell 100 to be degraded on a large scale. Therefore, in the embodiment of the present application, the isolation layer 1034 is provided on the surface b of the functional layer 103 facing the second gap 202 to avoid the chemical reaction caused by the direct contact between the second conductive layer 104 and the functional layer 103, and improve the stability of the solar cell 100.

[0077] In some embodiments, the isolation layer 1034 includes one of a water and oxygen barrier layer or a quantum dot layer.

[0078] In the technical solution of the embodiment of the present application, the water and oxygen barrier layer or the quantum dot layer is located on the surface b of the functional layer 103 facing the second gap 202 to protect the surface b of the functional layer 103 facing the second gap 202, and can prevent the large-area degradation of the solar cell 100 caused by the chemical reaction resulting from the direct contact between the light absorption layer 1032 and the electrical connection part 1042, as well as the damage to the light absorption layer by water, oxygen, etc. in the external environment. By providing the isolation layer 1034 in the present application, the stability of the solar cell 100 can be improved, thereby enhancing the performance of the solar cell 100.

[0079] Specifically, the water and oxygen barrier layer in the isolation layer 1034 can block the damage to the light absorption layer by water, oxygen, etc. in the external environment. The materials of the water and oxygen barrier layer include two-dimensional materials and polymers, such as one or a combination of several of graphene and its derivatives, PMMA, PPC, PVDC, and epoxy resins.

[0080] There is no adverse reaction between the quantum dot layer in the isolation layer 1034 and the exposed three-dimensional perovskite cross-section on the side of the light absorption layer, and a tight bond can be formed. Without affecting the function of the functional layer, it can also isolate water and oxygen and reduce the damage to the light absorption layer. The materials of the quantum dot layer can be selected from CdS, PbS, ZnO, and SiO2.

[0081] In some embodiments, the width Y3 of the first part 2021 is 30 μm to 150 μm, the width Y4 of the second part 2022 is 15 μm to 100 μm, and / or the width Y5 of the first surface 2041 is 1 μm to 50 μm.

[0082] In the technical solution of the embodiment of the present application, when the width Y3 of the first part 2021, the width Y4 of the second part 2022, and / or the width Y5 of the first surface 2041 are within the above ranges, it is beneficial for the second conductive layer 104 to form an ohmic contact with the first conductive layer 102 through the first surface 2041 and the second surface 2042, increasing the area of the ohmic contact and enhancing the open-circuit voltage, fill factor, and photoelectric conversion efficiency of the solar cell 100, thereby improving the performance of the solar cell 100.

[0083] It can be understood that, with reference to Figure 4 and Figure 9 , the width Y3 of the first part 2021 is the distance between the functional layers 103 of adjacent sub-cells; the width Y4 of the second part 2022 is the distance between the first conductive layers 102 of adjacent sub-cells; the width Y5 of the first surface 2041 is the distance that the protrusion 204 protrudes from the functional layer 103.

[0084] The width of the first part 2021 can be 30μm, 45μm, 50μm, 58μm, 62μm, 75μm, 86μm, 98μm, 100μm, 105μm, 112μm, 125μm, 136μm, 145μm, 150μm, etc., or a range composed of any two of the above values. For example, it can be 30μm to 62μm, 62μm to 100μm, 100μm to 125μm, 125μm to 150μm, 50μm to 105μm, 62μm to 98μm, etc.

[0085] The width of the second part 2022 can be 15μm, 25μm, 32μm, 45μm, 50μm, 58μm, 62μm, 75μm, 86μm, 98μm, 100μm, etc., or a range composed of any two of the above values. For example, it can be 15μm to 45μm, 45μm to 75μm, 75μm to 100μm, 32μm to 58μm, 50μm to 98μm, etc.

[0086] The width of the first surface 2041 can be 1nm, 2nm, 5nm, 12nm, 16nm, 19nm, 20nm, 30nm, 38nm, 45nm, 50nm, etc., or a range composed of any two of the above values. For example, it can be 1μm to 19μm, 19μm to 38μm, 38μm to 50μm, 5μm to 30μm, 12μm to 45μm, etc.

[0087] Referring to Figure 5 , the present application also provides an electrical device 1000, including the solar cell 100 as described above.

[0088] In the present application, the solar cell 100 supplies power to the electrical device 1000 as the power source thereof; or, the solar cell 100 can be used as the energy storage unit of the electrical device 1000. Exemplarily, the electrical device 1000 can be a lighting element, a display element, or an automobile, etc.

[0089] Referring to Figure 6 , the present application also provides a power generation device 2000, including the solar cell 100 as described above.

[0090] The solar cell 100 disclosed in the embodiments of the present application can be used in an electrical device 1000 or a power generation device 2000 that applies photoelectric conversion. The electrical device 1000 can be, but is not limited to, a mobile phone, a tablet computer, a laptop computer, an electric toy, an electric tool, a battery car, an electric vehicle, a ship, a spacecraft, and the like. Among them, the electric toy can include a fixed or mobile electric toy, such as a game console, an electric vehicle toy, an electric ship toy, and an electric aircraft toy, etc. The spacecraft can include an airplane, a rocket, a space shuttle, a spaceship, and the like. The power generation device 2000 can include a solar cell and an energy storage device, and the energy storage device can be a secondary battery.

[0091] In order to make the technical problems, technical solutions, and beneficial effects solved by the embodiments of the present application clearer, the following will be further described in detail in combination with the embodiments and the drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and in no way constitutes a limitation to the present application and its application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present application.

[0092] The features and performance of the present application will be further described in detail below in combination with the embodiments.

[0093] Embodiment 1

[0094] (1) Take an FTO conductive glass with a size of 5 cm x 5 cm, and laser etch to form 5 P1s (the first gap 201). The width of P1 is 30 μm, and the distance between each P1 is 6 mm. After ultrasonic cleaning with deionized water, detergent, ethanol, isopropanol, acetone, ethanol, and deionized water for 20 min in sequence, dry it with N2 and set aside.

[0095] (2) Preparation of the hole transport layer: Disperse NiOx nanoparticles in deionized water to form a solution with a concentration of 10 mg / mL, spin-coat it on a 5 cm x 5 cm FTO substrate at a speed of 5000 rpm, anneal it at 150 °C for 15 min, and naturally cool to obtain a hole transport layer with a thickness of 15 nm for standby.

[0096] (3) Preparation of the light absorption layer: After purging the surface of the NiOx substrate treated with ultraviolet ozone for 15 min, take an appropriate amount of 1.2 mol / L FA 0.9 Cs 0.1 PbI3 perovskite precursor solution, spin-coat it at a speed of 4000 rpm for 20 s to prepare a wet film, evacuate for 30 s, and anneal it on a hot plate at 120 °C for 15 min, and naturally cool to obtain a perovskite light absorption layer with a thickness of 600 nm.

[0097] (4) Preparation of the electron transport layer and the electron blocking layer: On the perovskite light-absorbing layer, a 20 mg / mL PCBM / chlorobenzene solution was spin-coated statically at a speed of 3000 rpm for 20 seconds, and a 20 mg / mL BCP / isopropanol solution was spin-coated dynamically for 20 seconds, obtaining an electron transport layer with a PCBM thickness of 27 nm and an electron blocking layer with a BCP (bathocuproine) thickness of 7 nm.

[0098] (5) Laser etching to form 5 P2s (the second gap 202). The first part 2021 of the second gap 202 penetrates through the FTO, the hole transport layer, the light-absorbing layer, and the electron transport layer, and the second part 2022 penetrates through the first conductive layer 102. The width of the first part 2021 is 30 μm, the width of the second part 2022 is 20 μm, and the distance between each P2 is 6 mm.

[0099] (6) Preparation of the second conductive layer: A Cu second conductive layer with a thickness of 100 nm was deposited by thermal evaporation to obtain a solar cell module. Laser etching was performed to form 5 P3s, the width of the P3s is 50 μm, and the distance between each P3 is 6 mm, forming several sub-cells, and the preparation of the cell module was completed.

[0100] Four sub-cells were selected from the cell module obtained in Example 1 as sub-cell devices 1 to 4 for testing.

[0101] Comparative Example 1

[0102] Similar to Example 1, the difference is that:

[0103] Step (5) of Example 1 was adjusted to: Laser etching 5 P2s, and the P2 scribing grooves penetrate through the FTO, the hole transport layer, the light-absorbing layer, and the electron transport layer, and the width of the P2 scribing grooves is 30 μm.

[0104] Four sub-cells were selected from the cell module obtained in Comparative Example 1 as sub-cell devices 5 to 8 for testing.

[0105] The sub-cell devices 1 to 8 obtained from the above Example 1 and Comparative Example 1 were subjected to battery performance tests to obtain Table 1.

[0106] Testing method:

[0107] 1. Photovoltaic conversion efficiency testing method

[0108] Under the irradiation of standard simulated sunlight (AM1.5G, 100 mW / cm 2 ), the battery performance was tested to obtain the I-V curve. According to the I-V curve and the data fed back by the testing equipment, the short-circuit current Jsc (unit mA / cm 2) The open-circuit voltage Voc (unit: V), the maximum photocurrent output Jmpp (unit: mA), and the maximum photovoltage output Vmpp (unit: V). The fill factor FF of the battery is calculated by the formula FF = Jsc×Voc / (Jmpp×Vmpp), with the unit of %. The photoelectric conversion efficiency PCE of the battery is calculated by the formula PCE = Jsc×Voc×FF / Pw, with the unit of %; Pw represents the input power, with the unit of mW.

[0109] 2. Test method for contact resistance

[0110] The prepared 5 cm × 5 cm battery device is used to test the contact resistance of the P2 groove (the second gap) with a multimeter (a multimeter is also known as a multiplexer, multimeter, triple meter, universal meter, etc., mainly for measuring voltage, current, and resistance). Refer to Figure 7 , which is the top view of the battery device. Refer to Figure 8 , which is the cross-sectional view of the battery module. Figure 7 The two points in Figure 8 are the placement positions of the test fixtures of the multimeter. It can be seen from the cross-sectional view of

[0111]

[0112] that the resistance value measured between the two fixtures is the resistance value of the first conductive layer 102, the resistance value of the second conductive layer 104, and the P2 contact resistance. By ensuring that the positions of the two test fixtures are relatively unchanged, the contact resistances of different P2 grooves can be relatively compared.

[0113] The above are only the implementation manners of the present application, and do not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made by using the content of the specification and drawings of the present application, or directly or indirectly applied in other related technical fields, shall be equally included in the patent protection scope of the present application.

Claims

1. A solar cell, characterized in that, Comprising: Substrate; A first conductive layer disposed on the substrate, with a number of first gaps penetrating through the first conductive layer; A functional layer disposed on the side of the first conductive layer away from the substrate, the functional layer at least includes a light absorption layer, a number of second gaps penetrate through the functional layer and the first conductive layer, the second gaps have a first part and a second part that communicate with each other, the first part penetrates through the functional layer, the second part penetrates through the first conductive layer, the first conductive layer has protrusions on both opposite sides facing the second gap, and the protrusions have a first surface facing the first part and a second surface facing the second part; A second conductive layer disposed on the side of the functional layer away from the first conductive layer, the second conductive layer is electrically connected to the first conductive layer through an electrical connection part filled in the second gap, the electrical connection part is electrically connected to the first surface and the second surface, a number of third gaps at least penetrate through the second conductive layer, and the first gaps, the second gaps and the third gaps are arranged staggeredly.

2. The solar cell according to claim 1, characterized in that, The conductive material of the electrical connection part includes one of Ag, Cu, C, Au, Al, ITO, AZO, BZO, IZO.

3. The solar cell according to claim 1, wherein The surface of the substrate facing the second gap has a barrier layer, and the barrier layer is located between the substrate and the electrical connection part.

4. The solar cell according to claim 3, wherein, The barrier layer includes one of oxides, nitrides, carbides and sulfides of metals or non-metals, and carbon materials and their derivatives; Alternatively, the barrier layer includes a number of stacked layers, and each layer independently includes one of oxides, nitrides, carbides and sulfides of metals or non-metals, and carbon materials and their derivatives.

5. The solar cell according to claim 4, characterized in that, The metal or non-metal oxide includes SiO x , AlO x , ZrO, MoO x , PbO, Sb2O4, CoO, B2O3, MgO, CuO, BiO3, and the metal or non-metal nitride includes SiN x , AlN, BN, Mg3N2, CrN, ZrN, the metal or non-metal carbide includes one of CaC2, Cr4C3, TaC, VC, ZrC, WC, B4C, SiC, the metal or non-metal sulfide includes one of Al2S3, PbS, B2S3, SiS2, and the carbon material and its derivatives include one of graphene and its derivatives.

6. The solar cell according to any one of claims 3 to 5, characterized in that, The thickness of the barrier layer is 1 nm to 30 nm.

7. The solar cell according to any one of claims 1 to 5, characterized in that, The surface of the functional layer facing the second gap has an isolation layer, and the isolation layer is located between the functional layer and the electrical connection part.

8. The solar cell according to claim 7, characterized in that, The isolation layer includes one of a water and oxygen barrier layer or a quantum dot layer.

9. The solar cell according to any one of claims 1 to 5, characterized in that, The width of the first part is 30 μm to 150 μm, the width of the second part is 15 μm to 100 μm, and / or the width of the first surface is 1 μm to 50 μm.

10. The solar cell according to claim 9, wherein, The width of the first part is greater than the width of the second part.

11. The solar cell according to any one of claims 1 to 5, characterized in that, The light absorption layer includes a perovskite material.

12. An electrical device, characterized in that, A solar cell comprising any one of claims 1 to 11.

13. A power generation device, characterized in that, A solar cell comprising any one of claims 1 to 11.

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