Voltage-withstanding power device

Abstract

The utility model discloses a voltage-withstanding power device, which is characterized in that an upper thinning area is formed below a first connecting part right above a second connecting part, and a lower thinning area is formed above the second connecting part; the two chips which are arranged at intervals in the horizontal direction are arranged in the upper thinning area and the lower thinning area and are electrically connected with the first connecting part and the second connecting part through a welding layer respectively; the lower surface of the first connecting part and / or the upper surface of the second connecting part are / is provided with a first strip-shaped groove parallel to the edges of the chips and located between the two chips. The lower surface of the first connecting part and / or the upper surface of the second connecting part are / is provided with second strip-shaped grooves parallel to the edges of the chips and located on the sides, opposite to the first strip-shaped grooves, of the two chips. On the basis that the overall voltage bearing capacity is improved, the packaging size is reduced, the heat dissipation area is increased, the service life can be prolonged, and the stability of electrical performance is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor power devices, and particularly relates to a voltage-resistant power device. Background Art

[0002] A diode device is an electronic device with unidirectional current conduction. Inside a semiconductor diode, there is a PN junction and two lead terminals. This electronic device has the transduction property of unidirectional current according to the direction of the applied voltage and is widely used in electronic products, communications, etc. Currently, the packaging volume of many diode devices is relatively large, resulting in the chip being widely covered, leading to poor heat dissipation efficiency and uniformity, and poor stability of the device performance during long-term use. Summary of the Utility Model

[0003] The purpose of the utility model is to provide a voltage-resistant power device, which, while improving the overall voltage-bearing capacity, reduces the packaging volume, increases the heat dissipation area, can also extend the service life, and improve the stability of electrical performance.

[0004] To achieve the above purpose, the technical solution adopted by the utility model is: a voltage-resistant power device, including: two horizontally arranged chips, a first electrode, a second electrode, and an epoxy encapsulation body. One end of the horizontally extending first electrode is a first connection part, and the other end is a first pin part. One end of the horizontally extending second electrode is a second connection part, and the other end is a second pin part. The epoxy encapsulation body covers the outside of the chips, the first connection part, and the second connection part. The ends of the first pin part and the second pin part, which are opposite to the first connection part and the second connection part respectively, extend outwards from the epoxy encapsulation body.

[0005] An upper thinning area is formed below the first connection part directly above the second connection part, and a lower thinning area is formed above the second connection part. The two horizontally spaced chips are both arranged in the upper thinning area and the lower thinning area and are each electrically connected to the first connection part and the second connection part through a welding layer. A first strip-shaped groove parallel to the edge of the chip is provided on the lower surface of the first connection part and / or the upper surface of the second connection part and is located between the two chips. A second strip-shaped groove parallel to the edge of the chip is provided on the lower surface of the first connection part and / or the upper surface of the second connection part and is located on the side of each of the two chips opposite to the first strip-shaped groove.

[0006] The further improved solutions in the above technical solutions are as follows:

[0007] 1. In the above solution, the width of the first strip-shaped groove is greater than the width of the second strip-shaped groove.

[0008] 2. In the above solution, one end of each of the two chips with the same polarity is connected to the lower surface of the first connection part through a soldering layer, and the other end of each of the two chips with the same polarity is connected to the upper surface of the second connection part through a soldering layer.

[0009] 3. In the above solution, the cross-sectional shapes of the first strip-shaped groove and the second strip-shaped groove are V-shaped, W-shaped or isosceles trapezoidal.

[0010] 4. In the above solution, the soldering layer is a solder paste layer.

[0011] Due to the application of the above technical solution, the present utility model has the following advantages and effects compared with the prior art:

[0012] For the voltage-resistant power device of the present utility model, an upper thinning area is formed below the first connection part directly above the second connection part, and a lower thinning area is formed above the second connection part. Two chips arranged at intervals in the horizontal direction are both arranged in the upper thinning area and the lower thinning area and are respectively electrically connected to the first connection part and the second connection part through a soldering layer. A first strip-shaped groove parallel to the edge of the chip is arranged on the lower surface of the first connection part and / or the upper surface of the second connection part and between the two chips. A second strip-shaped groove parallel to the edge of the chip is arranged on the lower surface of the first connection part and / or the upper surface of the second connection part and on one side of each of the two chips opposite to the first strip-shaped groove. On the basis of improving the overall voltage-bearing capacity, the volume of the package is reduced, the heat dissipation area is increased, the absolute and relative position accuracy of the chips and the bonding force between the edges of the chips and the epoxy can also be improved, the intrusion of water vapor and the like can be avoided, the service life is prolonged, and the stability of the electrical performance is improved. Description of the Drawings

[0013] Att Figure 1 is a schematic structural diagram of the voltage-resistant power device of the present utility model;

[0014] Att Figure 2 is Figure 1 a partial enlarged view of part A in

[0015] Att Figure 3 is Figure 1 a partial enlarged view of part B in

[0016] In the above drawings: 1. Chip; 2. First electrode; 21. First connection part; 22. First pin part; 3. Second electrode; 31. Second connection part; 32. Second pin part; 4. Epoxy encapsulation body; 51. Upper thinning area; 52. Lower thinning area; 6. First strip-shaped groove; 7. Second strip-shaped groove; 8. Soldering layer. Detailed Embodiment

[0017] The present utility model will be further described below with reference to the drawings and embodiments:

[0018] Embodiment 1: A voltage-resistant power device includes: two horizontally arranged chips 1, a first electrode 2, a second electrode 3, and an epoxy encapsulation body 4. One end of the horizontally extending first electrode 2 is a first connection portion 21, and the other end is a first pin portion 22. One end of the horizontally extending second electrode 3 is a second connection portion 31, and the other end is a second pin portion 32. The epoxy encapsulation body 4 covers the outsides of the chips 1, the first connection portion 21, and the second connection portion 31. The ends of the first pin portion 22 and the second pin portion 32 that are opposite to the first connection portion 21 and the second connection portion 31 respectively extend outwards from inside the epoxy encapsulation body 4;

[0019] Below the first connection portion 21 directly above the second connection portion 31, an upper thinning area 51 is formed. Above the second connection portion 31, a lower thinning area 52 is formed. The two horizontally spaced chips 1 are both arranged in the upper thinning area 51 and the lower thinning area 52 and are each electrically connected to the first connection portion 21 and the second connection portion 31 through a welding layer 8. On the lower surface of the first connection portion 21 and / or the upper surface of the second connection portion 31 and between the two chips 1, a first strip-shaped groove 6 parallel to the edge of the chip 1 is provided. On the lower surface of the first connection portion 21 and / or the upper surface of the second connection portion 31 and on the sides of the two chips 1 opposite to the first strip-shaped groove 6 respectively, a second strip-shaped groove 7 parallel to the edge of the chip 1 is provided.

[0020] The width of the above-mentioned first strip-shaped groove 6 is greater than the width of the second strip-shaped groove 7;

[0021] One end of the same polarity of each of the two above-mentioned chips 1 is connected to the lower surface of the first connection portion 21 through a welding layer 8, and the other end of the same polarity is connected to the upper surface of the second connection portion 31 through a welding layer 8;

[0022] The cross-sectional shapes of the above-mentioned first strip-shaped groove 6 and second strip-shaped groove 7 are V-shaped.

[0023] Embodiment 2: A voltage-resistant power device includes: two horizontally arranged chips 1, a first electrode 2, a second electrode 3, and an epoxy encapsulation body 4. One end of the horizontally extending first electrode 2 is a first connection portion 21, and the other end is a first pin portion 22. One end of the horizontally extending second electrode 3 is a second connection portion 31, and the other end is a second pin portion 32. The epoxy encapsulation body 4 covers the outsides of the chips 1, the first connection portion 21, and the second connection portion 31. The ends of the first pin portion 22 and the second pin portion 32 that are opposite to the first connection portion 21 and the second connection portion 31 respectively extend outwards from inside the epoxy encapsulation body 4;

[0024] A top thinning area 51 is formed below the first connection part 21 directly above the second connection part 31, and a bottom thinning area 52 is formed above the second connection part 31. The two chips 1 arranged at intervals in the horizontal direction are both arranged in the top thinning area 51 and the bottom thinning area 52 and are respectively electrically connected to the first connection part 21 and the second connection part 31 through a soldering layer 8. A first strip-shaped groove 6 parallel to the edge of the chip 1 is arranged on the lower surface of the first connection part 21 and / or the upper surface of the second connection part 31 and between the two chips 1. A second strip-shaped groove 7 parallel to the edge of the chip 1 is arranged on the lower surface of the first connection part 21 and / or the upper surface of the second connection part 31 and on one side of each of the two chips 1 opposite to the first strip-shaped groove 6.

[0025] The cross-sectional shapes of the above-mentioned first strip-shaped groove 6 and second strip-shaped groove 7 are isosceles trapezoids; the above-mentioned first pin part 22 and second pin part 32 are both cylindrical and coaxially arranged; the above-mentioned first pin part 22 and second pin part 32 both extend outwards from the central area in the thickness direction of the epoxy encapsulation body 4; the above-mentioned soldering layer 8 is a solder paste layer.

[0026] When the above-mentioned voltage-resistant power device is adopted, on the basis of improving the overall voltage-bearing capacity, it reduces the volume of the package, increases the heat dissipation area, can also improve the absolute and relative position accuracy of the chip and the bonding force between the edge of the chip and the epoxy, avoids the intrusion of water vapor, etc., prolongs the service life, and improves the stability of electrical performance.

[0027] The above embodiments are only for illustrating the technical concept and characteristics of the present invention, and their purpose is to enable those who are familiar with this technology to understand the content of the present invention and implement it accordingly, and cannot be used to limit the protection scope of the present invention. Any equivalent changes or modifications made according to the spirit and essence of the present invention should be covered within the protection scope of the present invention.

Claims

1. A voltage-resistant power device, characterized in that: Including: Two horizontally arranged chips (1), a first electrode (2), a second electrode (3), and an epoxy encapsulation body (4). One end of the horizontally extending first electrode (2) is a first connection portion (21), and the other end is a first pin portion (22). One end of the horizontally extending second electrode (3) is a second connection portion (31), and the other end is a second pin portion (32). The epoxy encapsulation body (4) covers the outsides of the chips (1), the first connection portion (21), and the second connection portion (31). The ends of the first pin portion (22) and the second pin portion (32) that are opposite to the first connection portion (21) and the second connection portion (31) respectively extend outwards from within the epoxy encapsulation body (4). An upper thinning area (51) is formed below the first connection portion (21) directly above the second connection portion (31), and a lower thinning area (52) is formed above the second connection portion (31). The two horizontally spaced chips (1) are both disposed within the upper thinning area (51) and the lower thinning area (52) and are each electrically connected to the first connection portion (21) and the second connection portion (31) through a solder layer (8). A first strip-shaped groove (6) parallel to the edge of the chip (1) is provided on the lower surface of the first connection portion (21) and / or the upper surface of the second connection portion (31) and is located between the two chips (1). A second strip-shaped groove (7) parallel to the edge of the chip (1) is provided on the lower surface of the first connection portion (21) and / or the upper surface of the second connection portion (31) and is located on the side of each of the two chips (1) opposite to the first strip-shaped groove (6).

2. The voltage-resistant power device according to claim 1, characterized in that: The width of the first strip-shaped groove (6) is greater than the width of the second strip-shaped groove (7).

3. The voltage-resistant power device according to claim 1 or 2, characterized in that: One end of each of the two chips (1) with the same polarity is connected to the lower surface of the first connection portion (21) through a solder layer (8), and the other end of each of the two chips (1) with the same polarity is connected to the upper surface of the second connection portion (31) through a solder layer (8).

4. The voltage-resistant power device according to claim 1 or 2, characterized in that: The cross-sectional shapes of the first strip-shaped groove (6) and the second strip-shaped groove (7) are V-shaped, W-shaped, or isosceles trapezoidal.

5. The voltage-resistant power device according to claim 1 or 2, characterized in that: The solder layer (8) is a solder paste layer.

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