Anti-static and anti-pollution mask plate
By setting the conductive layer and AF film layer on the mask plate, the problems of electrostatic damage and contamination during contact exposure are solved, and the uniform dispersion of electrostatics and pollution protection are achieved, which extends the service life of the mask plate.
Patent Information
- Application Number
- CN202422635060.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-30
- Publication Date
- 2025-08-15
- Estimated Expiration
- 2034-10-30
AI Technical Summary
The mask plate is susceptible to static damage and contamination during contact exposure, and has a short service life.
A conductive layer is provided on at least one side of the thickness direction of the mask plate, and an AF film layer is provided on the side where the conductive layer is away from the mask plate. The conductive layer has a light-transmitting area to evenly disperse static electricity, and the AF film layer has anti-fouling properties to prevent contaminants from adhesion.
Effectively prevent static electricity from aggregating and damage to line graphics, reduce cleaning frequency, and extend the service life of the mask plate.
Smart Images

Figure CN223229848U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of masks, and in particular to an anti-static and anti-pollution mask. Background Art
[0002] In the related art, the production process of the mask is: substrate cleaning → PVD coating → glue coating → photolithography → development → etching → glue removal → cleaning; which is equivalent to the lines produced by the coating being presented on the surface of the glass substrate. Since the mask is used for contact exposure in many scenarios (the mask is exposed after being bonded to the substrate), the process of separating the substrate and the mask after the exposure is completed will generate large static electricity. Since the lines on some masks are small, the static electricity accumulates here and easily generates a large voltage to damage the lines, and the mask will be damaged in the process; and since the mask is easily contaminated by the dirt brought by the substrate every time it is used, the mask needs to be cleaned frequently. The more times it is cleaned, the greater the damage to the mask, and its service life is therefore limited. Utility Model Content
[0003] The embodiment of the present application provides an anti-static and anti-pollution mask, which can solve the problem of easy damage and short service life of the mask in the related art.
[0004] The present invention provides an anti-static and anti-pollution mask, comprising:
[0005] Mask version body;
[0006] A conductive layer, wherein the mask body is provided with a conductive layer on at least one side along the thickness direction thereof, and the conductive layer has a light-transmitting area; and
[0007] The AF film layer is arranged on a side of the conductive layer away from the mask body.
[0008] In some embodiments, the conductive layer includes one of an ITO film layer and a graphene layer.
[0009] In some embodiments, an orthographic projection of the conductive layer on the mask version body does not exceed an edge of the mask version body.
[0010] In some embodiments, the conductive layer has a thickness of 80 nm to 120 nm; and / or
[0011] The thickness of the AF film layer is 8nm-12nm.
[0012] In some embodiments, the thickness of the mask body is 2.0 mm-2.5 mm.
[0013] The anti-static and anti-pollution mask according to the embodiment of the present application has a conductive layer provided on at least one side of the mask body along its thickness direction. In this way, the conductive layer mask will have a conductive effect, and the static electricity generated will not accumulate in a single place, but will be evenly dispersed everywhere on the surface. Therefore, no large local voltage will be generated to destroy the line pattern. At the same time, because the conductive layer has a light-transmitting area, it will not affect the light transmittance of the mask.
[0014] On the other hand, by setting up the AF film layer, it can effectively prevent fingerprints, oil stains and dust, while maintaining high light transmittance and reducing the cleaning frequency, thereby improving the service life of the mask. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without paying any creative work.
[0016] Figure 1 A schematic structural diagram of the anti-static and anti-pollution mask provided in an embodiment of the present application.
[0017] Reference numerals in the figures:
[0018] 10. Mask version body; 20. Conductive layer; 30. AF film layer. DETAILED DESCRIPTION
[0019] In order to make the purpose, technical solutions and advantages of this application more clearly understood, the present application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain this application and are not intended to limit this application.
[0020] Since the mask is used in the related art for contact exposure (the mask is exposed after being bonded to the substrate), the process of separating the substrate and the mask after the exposure is completed will generate a lot of static electricity. Since the lines on some masks are small, the static electricity accumulates here and easily generates a large voltage to damage the lines, and the mask will be damaged in the process; and because the mask is easily contaminated by the dirt brought by the substrate every time it is used, the mask needs to be cleaned frequently. The more times it is cleaned, the greater the damage to the mask, and the service life is therefore limited by technical issues.
[0021] In order to solve the above technical problems, this application proposes an anti-static and anti-pollution mask. Figure 1, including a mask body 10, a conductive layer 20 and an AF film layer 30. The mask body 10 is provided with a conductive layer 20 on at least one side along its thickness direction, and the conductive layer 20 has a light-transmitting area; the AF film layer 30 is provided on the side of the conductive layer 20 away from the mask body 10.
[0022] The conductive layer 20 can make the mask body 10 conductive, and the static electricity generated will not accumulate in a certain place, but will be evenly dispersed to any place on the surface, so no large local voltage will be generated to destroy the line pattern. At the same time, since the conductive layer 20 has a light-transmitting area, it will not affect the light transmittance of the mask, and has little or no effect on the use of the mask body 10.
[0023] The AF film layer 30 has excellent anti-fouling properties and can effectively prevent contaminants on the substrate or other objects from adhering to the mask; the AF film layer 30 usually has hydrophobic and oleophobic properties, making it difficult for contaminants to stay and spread on the surface of the mask, thereby maintaining the cleanliness of the mask; due to the anti-fouling properties of the AF film layer 30, the mask can still maintain a good clean state after multiple uses, thereby reducing the number of cleanings. Reducing the number of cleanings means reducing the damage to the mask caused by physical and chemical reactions during the cleaning process, thereby extending the service life of the mask.
[0024] Among them, the formation of the AF film layer 30 (anti-fingerprint / anti-fouling film layer) is mainly achieved through specific coating processes, such as vacuum evaporation, vacuum sputtering, and spray electroplating. Its raw materials are purchased from products currently on the market, so the specific structure of the AF film layer 30 will not be further described here.
[0025] It is understood that the conductive layer 20 can be provided on both sides of the mask body 10 or only on one side. When the conductive layer 20 is provided on both sides of the mask body 10, a more complete electrostatic protection system can be formed. Regardless of which side the mask contacts an object (such as a substrate, exposure equipment, etc.), static electricity can be quickly discharged through the conductive layer 20, preventing static electricity accumulation.
[0026] When the conductive layer 20 is provided only on one side of the reticle body 10, providing the conductive layer 20 on only one side can simplify the reticle manufacturing process and reduce production costs. It also reduces the amount of material used in the conductive layer 20, which is beneficial for environmental protection and sustainable development. Furthermore, in certain specific application scenarios, electrostatic protection may only be required on one side of the reticle. In this case, providing the conductive layer 20 on only one side can meet this requirement, avoiding unnecessary waste.
[0027] Furthermore, the conductive layer 20 includes one of an ITO (indium tin oxide) film layer, a graphene layer, and an AZO (aluminum-doped zinc oxide) film layer, or a mixture of at least two or more materials. The above materials are not only conductive materials but also have high light transmittance and do not affect the use of the mask.
[0028] In one embodiment of the present application, the conductive layer 20 is preferably an ITO (indium tin oxide) film layer. When the entire anti-static and anti-pollution mask is produced, the ITO film layer is deposited on one side of the mask body 10 by vacuum evaporation coating, and then the AF film layer 30 is deposited.
[0029] To ensure that the use of the entire anti-static and anti-pollution mask is not affected and to reduce manufacturing difficulty, the orthographic projection of the conductive layer 20 on the mask body 10 does not exceed the edge of the mask body 10. Generally speaking, the conductive layer 20 overlaps with the mask body 10. This ensures that the pattern on the surface of the mask body 10 is uniform and consistent during exposure.
[0030] In some embodiments of the present application, the thickness h1 of the conductive layer 20 is 80nm-120nm, that is, it can be 80nm, 90nm, 100nm, 110nm, 120nm and any two numbers above, the thickness h2 of the AF film layer 30 is 8nm-12nm, that is, it can be 8nm, 9nm, 10nm, 11nm, 12nm and any two numbers above, and the thickness of the mask version body 10h3 is 2.0mm-2.5mm, that is, it can be 2.0nm, 2.1nm, 2.2nm, 2.3nm, 2.4nm and any two numbers above.
[0031] The thickness of the conductive layer 20 is 80 nm to 120 nm. Precisely controlling the thickness of the conductive layer 20 within this range can ensure that it provides sufficient electrostatic protection while not excessively affecting the light transmittance and exposure accuracy of the mask.
[0032] The AF film layer 30 has a thickness of 8nm-12nm: When the AF (anti-fingerprint / anti-fouling) film layer is within this range, it effectively reduces the adhesion of contaminants, improving the cleanliness and lifespan of the reticle. At the same time, the appropriate thickness of the AF film layer 30 maintains good light transmittance, ensuring exposure quality.
[0033] The mask body 10 has a thickness of 2.0 mm to 2.5 mm. Within this range, the mask body 10 provides sufficient mechanical strength and stability to withstand the various stresses and deformations during manufacturing, transportation, and use. Furthermore, a mask body 10 of appropriate thickness can reduce material consumption and weight, lowering costs and energy consumption.
[0034] The same or similar numbers in the drawings of this embodiment correspond to the same or similar parts; in the description of this application, it should be understood that if the terms "upper", "lower", "left", "right", etc. indicate an orientation or position relationship, they are based on the orientation or position relationship shown in the drawings. This is only for the convenience of describing this application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation. Therefore, the terms describing the position relationship in the drawings are only used for illustrative purposes and cannot be understood as a limitation on this patent. For ordinary technicians in this field, the specific meanings of the above terms can be understood according to specific circumstances.
[0035] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present application should be included in the scope of protection of the present application.
Claims
1. An anti-static and anti-pollution mask, characterized in that: include: Mask version body; A conductive layer, wherein the mask body is provided with a conductive layer on at least one side along the thickness direction thereof, and the conductive layer has a light-transmitting area; as well as, The AF film layer is arranged on a side of the conductive layer away from the mask body.
2. The anti-static and anti-pollution mask according to claim 1, characterized in that: The conductive layer includes one of an ITO film layer and a graphene layer.
3. The anti-static and anti-pollution mask according to claim 1, characterized in that: The orthographic projection of the conductive layer on the mask version body does not exceed the edge of the mask version body.
4. The anti-static and anti-pollution mask according to claim 1, characterized in that: The conductive layer has a thickness of 80 nm to 120 nm; and / or The thickness of the AF film layer is 8nm-12nm.
5. The anti-static and anti-pollution mask according to claim 1, characterized in that: The thickness of the mask body is 2.0 mm to 2.5 mm.