Thin-film resistor

Abstract

The utility model discloses a thin-film resistor which comprises a substrate, a first surface electrode, a second surface electrode, a first back electrode, a second back electrode, a first resistance layer, a second resistance layer and a third resistance layer, the first surface electrode and the second surface electrode are respectively arranged on two sides of the upper surface of the substrate; the first back electrode and the second back electrode are respectively arranged on two sides of the lower surface of the substrate; a first resistance layer, a second resistance layer and a third resistance layer are arranged on the upper surface of the substrate; the first resistance layer, the second resistance layer and the third resistance layer are made of different materials; the first resistance layer, the second resistance layer and the third resistance layer are located between the first surface electrode and the second surface electrode; a plurality of first resistance adjusting cutting grooves are formed in the first resistance layer; a plurality of second resistance adjusting cutting grooves are formed in the second resistance layer; and a plurality of third resistance adjusting cutting grooves are formed in the third resistance layer. According to the utility model, the surface electrode is used for heat dissipation, the heat dissipation rate is improved, and the precision of the thin-film resistor is improved through rough resistance adjustment and fine resistance adjustment.

Description

Technical Field

[0001] The utility model relates to the technical field of resistors, in particular to a thin film resistor. Background Art

[0002] The increasing use of electronic components in new energy vehicles is placing higher demands on their reliability, power, and voltage resistance. Current methods for improving the power handling capabilities of thin-film resistors typically include using highly thermally conductive substrates or electrode materials, such as aluminum nitride ceramic substrates and Cu electrodes. Alternatively, a specifically patterned resistor layer can be used to shift the temperature peak from the center to the ends near the electrode, reducing the heat dissipation path and improving heat dissipation efficiency. Furthermore, by modifying the electrode shape, lower resistance values ​​and higher power characteristics can be achieved.

[0003] However, existing technologies cannot simultaneously improve the power of thin-film resistors while taking into account the accuracy issue, and fail to achieve high power and high accuracy in the low resistance, medium resistance, and high resistance ranges. Utility Model Content

[0004] The utility model provides a thin film resistor, which utilizes surface electrodes to dissipate heat, thereby improving the heat dissipation rate; uses different materials to form multiple resistance layers, and improves the accuracy of the thin film resistor through coarse resistance adjustment and fine resistance adjustment processes.

[0005] One embodiment of the present invention provides a thin film resistor, comprising:

[0006] A substrate, a first surface electrode, a second surface electrode, a first back electrode, a second back electrode, a first resistance layer, a second resistance layer, and a third resistance layer;

[0007] The first surface electrode and the second surface electrode are respectively arranged on both sides of the upper surface of the substrate;

[0008] The first back electrode and the second back electrode are respectively arranged on both sides of the lower surface of the substrate;

[0009] The upper surface of the substrate is provided with a first resistance layer, a second resistance layer and a third resistance layer; wherein the material of the first resistance layer and the second resistance layer is a first material, and the material of the third resistance layer is a second material; the first material and the second material are different materials;

[0010] The first resistance layer, the second resistance layer and the third resistance layer are located between the first surface electrode and the second surface electrode;

[0011] A plurality of first resistance adjustment cutting grooves are provided on the first resistance layer;

[0012] A plurality of second resistance adjustment cutting grooves are provided on the second resistance layer;

[0013] A plurality of third resistance adjustment cutting grooves are provided on the third resistance layer.

[0014] Furthermore, the first resistance layer, the second resistance layer and the third resistance layer are located between the first surface electrode and the second surface electrode, specifically:

[0015] The first end of the first resistance layer is connected to the first surface electrode;

[0016] The second end of the first resistance layer is connected to the first end of the third resistance layer;

[0017] The second end of the third resistance layer is connected to the first end of the second resistance layer;

[0018] The second end of the second resistance layer is connected to the second surface electrode.

[0019] Furthermore, a plurality of first resistance adjustment cutting grooves are provided on the first resistance layer, specifically:

[0020] The lengths of the plurality of first resistance-adjusting cutting grooves decrease one by one along a direction from the first end of the first resistance layer to the second end of the first resistance layer.

[0021] Furthermore, a plurality of second resistance adjustment cutting grooves are provided on the second resistance layer, specifically:

[0022] The lengths of the plurality of second resistance-adjusting cutting grooves decrease one by one along a direction from the second end of the second resistance layer to the first end of the second resistance layer.

[0023] Furthermore, the first resistance trimming cutting groove is specifically:

[0024] The length of the next first resistance trimming cutting groove in the direction from the first end of the first resistance layer to the second end of the first resistance layer is not less than a first preset multiple of the length of the previous first resistance trimming cutting groove; wherein the first preset multiple is less than 1 and greater than 0.

[0025] Furthermore, the second resistance adjustment cutting groove is specifically:

[0026] The length of the next second resistance trimming cutting groove in the direction from the second end of the second resistance layer to the first end of the second resistance layer is not less than a second preset multiple of the length of the previous second resistance trimming cutting groove; wherein the second preset multiple is less than 1 and greater than 0.

[0027] Furthermore, the number of the first resistance trimming cutting grooves is greater than the number of the third resistance trimming cutting grooves; and the number of the second resistance trimming cutting grooves is greater than the number of the third resistance trimming cutting grooves.

[0028] Furthermore, the resistivity of the first resistance layer and the resistivity of the second resistance layer are both lower than the resistivity of the third resistance layer; the melting point of the first material is greater than the melting point of the second material; and the first material is a high melting point material.

[0029] Furthermore, the first surface electrode and the first back electrode are located on the first side of the substrate; the second surface electrode and the second back electrode are located on the second side of the substrate;

[0030] The sum of the widths of the first surface electrode and the first resistive layer is less than or equal to the width of the first back electrode;

[0031] The sum of the widths of the second surface electrode and the second resistance layer is less than or equal to the width of the second back electrode.

[0032] Furthermore, the substrate is made of AlN ceramic; the first surface electrode, the second surface electrode, the first back electrode and the second back electrode are made of general conductive materials; the first resistance layer and the second resistance layer are made of Ta thin film; and the third resistance layer is made of CrSi thin film.

[0033] In the present invention, the number of the first resistance adjustment cutting grooves on the first resistor layer and the second resistance adjustment cutting grooves on the second resistor layer is greater than that of the third resistor layer, so that when the thin-film resistor is working, the temperature of the first resistor layer and the second resistor layer is higher than that of the third resistor layer; by controlling the length changes of each first resistance adjustment cutting groove and each second resistance adjustment cutting groove, the temperature peak point of the entire thin-film resistor is close to the surface electrode, and heat is dissipated through the surface electrode, thereby improving the heat dissipation rate; by controlling the width of the back electrode, the spatial projections of the first resistor layer, the second resistor layer and the surface electrode all fall into the interior of the back electrode, thereby providing a more efficient heat dissipation channel; different materials are used to form the first resistor layer, the second resistor layer and the third resistor layer, and by coarsely adjusting the resistance of the first resistor layer and the second resistor layer and finely adjusting the resistance of the third resistor layer, the accuracy of the thin-film resistor is improved and the resistance adjustment range is increased. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 This is a schematic diagram of the top view of the thin film resistor provided by an embodiment of the present utility model;

[0035] Figure 2 This is a bottom-up structural diagram of a thin-film resistor provided by an embodiment of the present utility model;

[0036] Figure 3 1 is a schematic diagram of the front view of the thin film resistor provided by an embodiment of the present utility model;

[0037] Figure 4 It is a left-side structural schematic diagram of a thin film resistor provided by an embodiment of the present utility model.

[0038] The reference numerals in the accompanying drawings of the specification are as follows:

[0039] 1. Substrate; 2. First surface electrode; 3. Second surface electrode; 4. First back electrode; 5. Second back electrode; 6. First resistor layer; 7. Second resistor layer; 8. Third resistor layer; 9. First resistance adjustment cutting groove; 10. Second resistance adjustment cutting groove; 11. Third resistance adjustment cutting groove. DETAILED DESCRIPTION

[0040] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0041] In the description of this application, it should be understood that the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, a feature specified as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise specified, "plurality" means two or more.

[0042] In the description of this application, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; and internal connections between two components. Those skilled in the art will understand the specific meanings of the above terms in this application based on the specific circumstances.

[0043] See also Figure 1-4 One embodiment of the present invention provides a thin film resistor, comprising: a substrate 1, a first surface electrode 2, a second surface electrode 3, a first back electrode 4, a second back electrode 5, a first resistance layer 6, a second resistance layer 7 and a third resistance layer 8;

[0044] The first surface electrode 2 and the second surface electrode 3 are respectively arranged on both sides of the upper surface of the substrate 1;

[0045] The first back electrode 4 and the second back electrode 5 are respectively arranged on both sides of the lower surface of the substrate 1;

[0046] The upper surface of the substrate 1 is provided with a first resistor layer 6, a second resistor layer 7 and a third resistor layer 8; wherein the material of the first resistor layer 6 and the second resistor layer 7 is a first material, and the material of the third resistor layer 8 is a second material; the first material and the second material are different materials;

[0047] The first resistance layer 6, the second resistance layer 7 and the third resistance layer 8 are located between the first surface electrode 2 and the second surface electrode 3;

[0048] A plurality of first resistance adjustment cutting grooves 9 are provided on the first resistance layer 6;

[0049] A plurality of second resistance adjustment cutting grooves 10 are provided on the second resistance layer 7;

[0050] A plurality of third resistance adjustment cutting grooves 11 are provided on the third resistance layer 8 .

[0051] In an embodiment of the present invention, two different materials are used to form the first resistor layer 6, the second resistor layer 7, and the third resistor layer 8, wherein the first resistor layer 6 and the second resistor layer 7 are made of the same material. The thicknesses of the first resistor layer 6, the second resistor layer 7, and the third resistor layer 8 may be different depending on the actual resistance value required. By adjusting the resistance of specific regions of the resistor layer in a specific manner, high power and high precision can be achieved within the low resistance, medium resistance, and high resistance ranges. Specifically, the thin-film resistor provided by the present invention achieves the target resistance value by laser cutting, and the laser cutting areas are distributed on the first resistor layer 6, the second resistor layer 7, and the third resistor layer 8. The first resistor layer 6, the second resistor layer 7, and the third resistor layer 8 can be regarded as a series structure, and the final resistance value of the thin-film resistor is equal to the sum of the resistance values ​​of the three resistor layers. If the resistivity of the third resistor layer 8 is higher than that of the first resistor layer 6 and the second resistor layer 7, low resistance, medium resistance, and high resistance can be achieved by adjusting the resistance value of the third resistor layer 8. First resistance-trimming grooves 9 in first resistor layer 6 and second resistance-trimming grooves 10 in second resistor layer 7 are used for coarse resistance trimming, while third resistance-trimming grooves 11 in third resistor layer 8 are used for fine resistance trimming. Therefore, during actual resistance trimming, laser coarse resistance trimming is first performed on first and second resistor layers 6 and 7, followed by laser fine resistance trimming on third resistor layer 8, achieving high precision in the thin-film resistors. The resistor layers are then packaged and electroplated using common packaging and electroplating techniques in the thin-film resistor industry and will not be elaborated on in detail here.

[0052] In one embodiment, the first resistance layer 6, the second resistance layer 7 and the third resistance layer 8 are located between the first surface electrode 2 and the second surface electrode 3, specifically:

[0053] The first end of the first resistance layer 6 is connected to the first surface electrode 2;

[0054] The second end of the first resistance layer 6 is connected to the first end of the third resistance layer 8;

[0055] The second end of the third resistance layer 8 is connected to the first end of the second resistance layer 7;

[0056] The second end of the second resistance layer 7 is connected to the second surface electrode 3 .

[0057] In one embodiment, a plurality of first resistance adjustment cutting grooves 9 are provided on the first resistance layer 6, specifically:

[0058] The lengths of the plurality of first resistance-adjusting cutting grooves 9 decrease one by one along the direction from the first end of the first resistance layer 6 to the second end of the first resistance layer 6 .

[0059] In one embodiment, a plurality of second resistance adjustment cutting grooves 10 are provided on the second resistance layer 7, specifically:

[0060] The lengths of the plurality of second resistance-adjusting cutting grooves 10 decrease one by one along the direction from the second end of the second resistance layer 7 to the first end of the second resistance layer 7 .

[0061] In an embodiment of the present invention, the length of the first resistance adjustment cutting groove 9 changes, gradually decreasing along the direction from the first end of the first resistance layer 6 to the second end of the first resistance layer 6, so that the temperature gradually decreases in the direction from the first surface electrode 2 to the third resistance layer 8, thereby making the temperature peak point of the entire thin film resistor close to the first surface electrode 2, and dissipating heat through the first surface electrode 2, thereby improving the heat dissipation rate.

[0062] In the embodiment of the present invention, similarly, the length of the second resistance adjustment cutting groove 10 changes, gradually decreasing in the direction from the second end of the second resistance layer 7 to the first end of the second resistance layer 7, so that the temperature gradually decreases in the direction from the second surface electrode 3 to the third resistance layer 8, thereby making the temperature peak point of the entire thin film resistor close to the second surface electrode 3, and dissipating heat through the second surface electrode 3, thereby improving the heat dissipation rate.

[0063] In one embodiment, the first resistance trimming cutting groove 9 is specifically:

[0064] The length of the next first resistance adjustment cutting groove 9 in the direction from the first end of the first resistance layer 6 to the second end of the first resistance layer 6 is not less than a first preset multiple of the length of the previous first resistance adjustment cutting groove 9; wherein the first preset multiple is less than 1 and greater than 0.

[0065] In one embodiment, the second resistance trimming cutting groove 10 is specifically:

[0066] The length of the next second resistance trimming cutting groove 10 in the direction from the second end of the second resistance layer 7 to the first end of the second resistance layer 7 is not less than a second preset multiple of the length of the previous second resistance trimming cutting groove 10; wherein the second preset multiple is less than 1 and greater than 0.

[0067] In the embodiment of the present invention, the first resistance adjustment cutting groove 9 and the second resistance adjustment cutting groove 10 are both along the direction of the surface electrode toward the third resistance layer 8, and the length gradually decreases. In order to achieve the best effect, a preset multiple can be set for each to limit the speed of length change. For example, assuming that the first preset multiple and the second preset multiple are 0.8, the length change range of the first resistance adjustment cutting groove 9 and the second resistance adjustment cutting groove 10 is [0.8, 1]. If L represents the length, then L902 = L901*(0.8~1), and so on, L90n = L901*[(0.8~1) n-1 ]. Similarly, L1002=L1001*(0.8~1), and so on, L100n=L1001*[(0.8~1) n-1 ]. The number of cutting grooves of the first resistance trimming cutting groove 9 and the number of cutting grooves of the second resistance trimming cutting groove 10 may not be equal.

[0068] In one embodiment, the number of the first resistance trimming cutting slots 9 is greater than the number of the third resistance trimming cutting slots 11 ; and the number of the second resistance trimming cutting slots 10 is greater than the number of the third resistance trimming cutting slots 11 .

[0069] In an embodiment of the present invention, the number of cutting grooves on the first resistor layer 6 and the second resistor layer 7 is greater than that on the third resistor layer 8, so that when the thin film resistor is working, the temperature of the first resistor layer 6 and the second resistor layer 7 is higher than that of the third resistor layer 8, thereby dissipating heat through the first surface electrode 2 and the second surface electrode 3, thereby improving the utilization rate of the surface electrodes and enhancing the heat dissipation rate.

[0070] In one embodiment, the resistivity of the first resistance layer 6 and the resistivity of the second resistance layer 7 are both lower than the resistivity of the third resistance layer 8; the melting point of the first material is greater than the melting point of the second material; and the first material is a high melting point material.

[0071] In the embodiment of the present invention, the resistivity of the third resistor layer 8 is set to be higher than that of the first resistor layer 6 and the second resistor layer 7. The resistance value of the third resistor layer 8 can be adjusted to achieve low resistance, medium resistance, and high resistance, thereby achieving high precision of the thin film resistor. By setting the melting point of the material of the first resistor layer 6 and the second resistor layer 7 to be higher than that of the third resistor layer 8, and by using high melting point materials to form the first resistor layer 6 and the second resistor layer 7, the first resistor layer 6 and the second resistor layer 7 can withstand higher peak temperatures, maximizing the use of surface electrodes for heat dissipation, thereby improving heat dissipation efficiency.

[0072] In one embodiment, the first surface electrode 2 and the first back electrode 4 are located on the first side of the substrate 1; the second surface electrode 3 and the second back electrode 5 are located on the second side of the substrate 1;

[0073] The sum of the widths of the first surface electrode 2 and the first resistive layer 6 is less than or equal to the width of the first back electrode 4;

[0074] The sum of the widths of the second surface electrode 3 and the second resistance layer 7 is smaller than or equal to the width of the second back electrode 5 .

[0075] In an embodiment of the present invention, the width of the back electrode is controlled so that the spatial projections of the first surface electrode 2 and the first resistance layer 6 fall within the first back electrode 4, and the spatial projections of the second surface electrode 3 and the second resistance layer 7 fall within the second back electrode 5, thereby forming a more efficient heat dissipation channel and improving the heat dissipation efficiency.

[0076] In one embodiment, the substrate 1 is made of AlN ceramic; the first surface electrode 2, the second surface electrode 3, the first back electrode 4 and the second back electrode 5 are made of general conductive materials; the first resistance layer 6 and the second resistance layer 7 are made of Ta thin film; and the third resistance layer 8 is made of CrSi thin film.

[0077] In this embodiment of the present invention, the first and second resistor layers 6 and 7 can be formed of high-melting-point Ta thin films deposited by magnetron sputtering, while the third resistor layer 8 can be formed of CrSi thin films deposited by magnetron sputtering. The thicknesses of the first, second, and third resistor layers 6, 7, and 8 can be different.

[0078] As an example of an embodiment of the present invention, to achieve the best effect, the resistance of the third resistor layer 8 can be set to 70% to 80% of the target resistance. Laser rough resistance adjustment is performed on the first resistor layer 6 and the second resistor layer 7 to achieve a resistance of 97% to 99% of the target resistance. After heat treatment under certain conditions, laser fine resistance adjustment is performed on the third resistor layer 8 to finally achieve the target resistance, thereby achieving high precision of the thin film resistor. As an example of an embodiment of the present invention, the first resistor layer 6 and the second resistor layer 7 contribute 70% to 80% of the target resistance, the first resistor cutting groove 9 and the second resistor cutting groove 10 contribute 19% to 27% of the target resistance, and the third resistor cutting groove 11 contributes 1% to 3% of the target resistance. Assuming the target resistance of the thin film resistor is 100 kΩ, the series resistance of the first resistor layer 6, the second resistor layer 7, and the third resistor layer 8 can be controlled to be 80% of the target resistance, that is, 80 kΩ. From the outside to the inside, the first resistor layer 6 is laser coarsely trimmed, and the length of each first resistance trimming cutting groove 9 is set to L901 = 0.8 mm, L902 = 0.8*0.9 = 0.72 mm, and L903 = 0.8*0.92 = 0.648 mm. L904 = 0.8 * 0.93 = 0.5832mm, L905 = 0.8 * 0.94 = 0.52488mm; the second resistor layer 7 is subjected to laser coarse resistance trimming, and the length of each second resistance trimming cutting groove 10 is set, L1001 = L902 = 0.8mm, L1002 = L902 = 0.72mm, L1003 = L903 = 0.648mm, L1004 = L904 = 0.5832mm. At this point, the resistance value is 98% of the target resistance value (98kΩ), and no further resistance trimming is required. After heat treatment under appropriate conditions, the third resistance trimming cutting groove 11 on the third resistor layer 8 is subjected to laser fine resistance trimming. At this point, the resistance value reaches 99.98kΩ, corresponding to an accuracy of -0.02%, reaching the A-level accuracy range (±0.05%) commonly used in the resistor industry. The thin film resistor of the embodiment of the present invention can withstand a power density of 0.48 to 0.5 W / mm2 and a rated power of up to 1 W. Compared with existing thin film resistors, the power can be increased by 4 times.

[0079] In the embodiment of the present invention, after the resistor structure and resistance adjustment method are determined according to the present invention, the resistor layer is packaged and electroplated. This technology is a common technology in the industry and is not specifically explained in the present invention.

[0080] The implementation of the present invention has the following beneficial effects:

[0081] In the embodiment of the utility model, the number of the first resistance adjustment cutting grooves 9 on the first resistor layer 6 and the second resistance adjustment cutting grooves 10 on the second resistor layer 7 is greater than that of the third resistor layer 8, so that when the thin film resistor is working, the temperature of the first resistor layer 6 and the second resistor layer 7 is higher than that of the third resistor layer 8; by controlling the length changes of each first resistance adjustment cutting groove 9 and each second resistance adjustment cutting groove 10, the temperature peak point of the entire thin film resistor is close to the surface electrode, and heat is dissipated through the surface electrode to improve the heat dissipation rate; by controlling the width of the back electrode, the spatial projections of the first resistor layer 6, the second resistor layer and the surface electrode all fall into the interior of the back electrode, thereby providing a more efficient heat dissipation channel; different materials are used to form the first resistor layer 6, the second resistor layer 7 and the third resistor layer 8, and the first resistor layer 6 and the second resistor layer 7 are roughly adjusted, and the third resistor layer is finely adjusted, thereby improving the accuracy of the thin film resistor and increasing the resistance adjustment range.

[0082] The above is a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present invention. These improvements and modifications are also considered to be within the scope of protection of the present invention.

Claims

1. A thin film resistor, characterized in that: include: A substrate, a first surface electrode, a second surface electrode, a first back electrode, a second back electrode, a first resistance layer, a second resistance layer, and a third resistance layer; The first surface electrode and the second surface electrode are respectively arranged on both sides of the upper surface of the substrate; The first back electrode and the second back electrode are respectively arranged on both sides of the lower surface of the substrate; The upper surface of the substrate is provided with a first resistance layer, a second resistance layer and a third resistance layer; wherein the material of the first resistance layer and the second resistance layer is a first material, and the material of the third resistance layer is a second material; the first material and the second material are different materials; The first resistance layer, the second resistance layer and the third resistance layer are located between the first surface electrode and the second surface electrode; A plurality of first resistance adjustment cutting grooves are provided on the first resistance layer; A plurality of second resistance adjustment cutting grooves are provided on the second resistance layer; A plurality of third resistance adjustment cutting grooves are provided on the third resistance layer.

2. The thin film resistor according to claim 1, wherein The first resistance layer, the second resistance layer and the third resistance layer are located between the first surface electrode and the second surface electrode, specifically: The first end of the first resistance layer is connected to the first surface electrode; The second end of the first resistance layer is connected to the first end of the third resistance layer; The second end of the third resistance layer is connected to the first end of the second resistance layer; The second end of the second resistance layer is connected to the second surface electrode.

3. The thin film resistor according to claim 1, wherein The first resistance layer is provided with a plurality of first resistance adjustment cutting grooves, specifically: The lengths of the plurality of first resistance-adjusting cutting grooves decrease one by one along a direction from the first end of the first resistance layer to the second end of the first resistance layer.

4. The thin film resistor according to claim 1, wherein The second resistance layer is provided with a plurality of second resistance adjustment cutting grooves, specifically: The lengths of the plurality of second resistance-adjusting cutting grooves decrease one by one along a direction from the second end of the second resistance layer to the first end of the second resistance layer.

5. The thin film resistor according to claim 3, wherein The first resistance adjustment cutting groove is specifically: The length of the next first resistance trimming cutting groove in the direction from the first end of the first resistance layer to the second end of the first resistance layer is not less than a first preset multiple of the length of the previous first resistance trimming cutting groove; wherein the first preset multiple is less than 1 and greater than 0.

6. The thin film resistor according to claim 4, wherein The second resistance adjustment cutting groove is specifically: The length of the next second resistance trimming cutting groove in the direction from the second end of the second resistance layer to the first end of the second resistance layer is not less than a second preset multiple of the length of the previous second resistance trimming cutting groove; wherein the second preset multiple is less than 1 and greater than 0.

7. The thin film resistor according to claim 1, wherein The number of the first resistance trimming cutting grooves is greater than the number of the third resistance trimming cutting grooves; the number of the second resistance trimming cutting grooves is greater than the number of the third resistance trimming cutting grooves.

8. The thin film resistor according to claim 1, wherein The resistivity of the first resistance layer and the resistivity of the second resistance layer are both lower than the resistivity of the third resistance layer; the melting point of the first material is higher than the melting point of the second material; and the first material is a high melting point material.

9. The thin film resistor according to claim 1, wherein The first surface electrode and the first back electrode are located on the first side of the substrate; the second surface electrode and the second back electrode are located on the second side of the substrate; The sum of the widths of the first surface electrode and the first resistive layer is less than or equal to the width of the first back electrode; The sum of the widths of the second surface electrode and the second resistance layer is less than or equal to the width of the second back electrode.

10. The thin film resistor according to claim 1, wherein The substrate is made of AlN ceramic; the first surface electrode, the second surface electrode, the first back electrode and the second back electrode are made of general conductive materials; the first resistance layer and the second resistance layer are made of Ta thin film; and the third resistance layer is made of CrSi thin film.

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