Radio frequency front-end module and radio frequency front-end circuit

Abstract

The utility model discloses a radio frequency front-end module and a radio frequency front-end circuit. The radio frequency front-end module comprises a first filter, a second filter, a first inductor, a capacitor and a radio frequency switch. The radio frequency switch is provided with a first port, a second port and an antenna port, the first filter is connected to the first port, and the first filter is used for filtering a radio frequency signal of a first frequency band; the second filter is connected to the second port, the second filter is used for filtering the radio frequency signal of the second frequency band, and the second frequency band and the first frequency band at least partially do not coincide. The first inductor is connected between the first filter and the first port; the capacitor and the first inductor are connected in parallel to form parallel resonance, and the resonant frequency of the parallel resonance is in a second frequency band. When the first filter and the second filter work at the same time, parallel resonance formed by the capacitor and the first inductor can restrain radio frequency signals of the second frequency band leaked to the branch where the first filter is located through the radio frequency switch, so that the problem of signal crosstalk between different branches is solved.

Description

Technical Field

[0001] The present application relates to the field of radio frequency technology, and more specifically, to a radio frequency front-end module and a radio frequency front-end circuit. Background Art

[0002] At present, RF front-end modules have been widely used in wireless communications, the Internet of Things, smart homes and other fields. They can process RF signals (for example, power amplification, modulation and demodulation, etc.) to complete the tasks of receiving and sending RF signals.

[0003] In RF front-end module design, a matching circuit is typically placed between the filter and the RF switch to improve the power transmission efficiency of the RF signal. Current matching circuits are typically implemented using a type network. Therefore, when filters in different frequency bands need to transmit signals simultaneously, the type network matching circuit cannot achieve both impedance matching and isolation of RF signals in different frequency bands, resulting in a decrease in RF signal quality. Utility Model Content

[0004] The embodiments of the present application provide a radio frequency front-end module and a radio frequency front-end circuit.

[0005] According to the first aspect of the present application, an embodiment of the present application provides a radio frequency front-end module, which includes a substrate and a first filter, a second filter, a first inductor, a capacitor and a radio frequency switch arranged on the substrate. The first filter and the radio frequency switch are arranged in sequence along the first direction, the second filter and the radio frequency switch are arranged in sequence along the second direction, and the first direction and the second direction intersect. The radio frequency switch is provided with a first port, a second port and an antenna port, and the radio frequency switch is used to turn on or off the signal branch between the first port and the antenna port and the signal branch between the second port and the antenna port. The first filter is connected to the first port, and the first filter is used to filter the radio frequency signal of the first frequency band; the second filter is connected to the second port, and the second filter is used to filter the radio frequency signal of the second frequency band, and the second frequency band and the first frequency band do not overlap at least partially. The first inductor is connected between the first filter and the first port; the capacitor and the first inductor are connected in parallel to form a parallel resonance, and the resonant frequency of the parallel resonance is within the second frequency band.

[0006] In some possible embodiments, the second filter is configured as a resonant circuit having a resonant frequency within the first frequency band.

[0007] In some possible embodiments, the impedance of the second filter for radio frequency signals in the first frequency band is closer to an open circuit state than the impedance of the first filter for radio frequency signals in the second frequency band.

[0008] In some possible embodiments, no resonant circuit having a resonant frequency within the first frequency band is provided in the signal branch between the second filter and the second port.

[0009] In some possible embodiments, the first filter and the RF switch are spaced apart in the first direction to form a first gap; the first inductor and the capacitor are arranged in the first gap, and the first inductor and the capacitor are arranged along the second direction.

[0010] In some possible embodiments, the first inductor and the capacitor are both mounted in the first gap in the form of surface mount devices; or the first inductor is wound in the first gap in the form of a trace, and the capacitor is mounted in the first gap in the form of a surface mount device.

[0011] In some possible embodiments, the inductance of the first inductor is greater than or equal to 1 nH and less than or equal to 3 nH.

[0012] In some possible embodiments, the RF front-end module also includes a second inductor, one end of the second inductor is connected to the common end of the first filter and the first inductor, and the other end of the second inductor is grounded; the second inductor is arranged in the first gap, and the second inductor, the first inductor and the capacitor are arranged along the second direction.

[0013] In some possible embodiments, the second inductor is mounted in the first gap in the form of a surface mount device; the inductance of the second inductor is greater than or equal to 4 nH and less than or equal to 10 nH.

[0014] In some possible embodiments, the RF front-end module further includes a third inductor, a first end of the third inductor is connected to the second filter, and a second end of the third inductor is grounded; the second filter and the RF switch are spaced apart in the second direction to form a second gap; and the third inductor is arranged in the second gap.

[0015] In some possible embodiments, the third inductor is mounted in the second gap in the form of a surface mount device; the inductance value of the third inductor is greater than or equal to 5nH and less than or equal to 8nH; the first end of the third inductor and the second end of the third inductor are respectively opposite ends of the third inductor in the first direction.

[0016] Among them, in some possible embodiments, the RF front-end module also includes a fourth inductor, one end of the fourth inductor is connected to the second filter, and the other end of the fourth inductor is connected to the second port; the first end of the third inductor is connected to the common end of the fourth inductor and the second filter; the fourth inductor is wound in the second gap in the form of a trace; the inductance value of the fourth inductor is greater than or equal to 0.2nH and less than or equal to 0.5nH; the fourth inductor and the third inductor are arranged along the first direction.

[0017] In some possible embodiments, the fourth inductor includes a first trace, a second trace, and a third trace connected in sequence; the first trace is looped in the second gap and connected to the second port; the second trace is looped in the second gap; the common end formed by the second trace and the third trace is located in the second gap and connected to the first end of the third inductor; the third trace is connected to the second filter.

[0018] In some possible embodiments, the substrate is provided with a plurality of metal layers stacked on each other; the first routing line and the second routing line are respectively arranged on different metal layers; and the second routing line and the third routing line are located on the same metal layer.

[0019] In some possible embodiments, the first frequency band is smaller than the second frequency band.

[0020] In some possible embodiments, the first frequency band is the B3 frequency band; the second frequency band is the B40 frequency band or the B41 frequency band.

[0021] Among them, in some possible embodiments, the substrate has a first side and a second side relative to each other in the first direction, and the substrate has a third side and a fourth side relative to each other in the second direction, and the first side, the third side, the second side and the fourth side are connected in sequence; the substrate is provided with a first input port and a second input port, the first input port is located on the first side, and is used to input the radio frequency signal of the first frequency band; the second input port is located on the third side, and is used to input the radio frequency signal of the second frequency band; the radio frequency front-end module also includes a first power amplifier chip and a second power amplifier chip arranged on the substrate, the first power amplifier chip is connected between the first input port and the first filter, the first power amplifier chip is arranged adjacent to the first input port, and is arranged on the side of the first filter close to the third side; the second power amplifier chip is connected between the second input port and the second filter; the second power amplifier chip is arranged adjacent to the second input port, and is arranged on the side of the second filter close to the third side; the first power amplifier chip and the second power amplifier chip are arranged at intervals along the first direction.

[0022] Among them, in some possible embodiments, the first power amplifier chip and the first filter are arranged in sequence along the second direction; the second power amplifier chip, the second filter and the RF switch are arranged in sequence along the second direction; the RF switch is located on the side of the first filter facing the second side; and the RF switch is located on the side of the second filter facing the fourth side.

[0023] An embodiment of the present application provides a radio frequency front-end module, in which a first inductor is connected between a first filter and a first port of a radio frequency switch, a capacitor and the first inductor are connected in parallel to form a parallel resonance, and the resonant frequency of the parallel resonance is within a second frequency band.

[0024] Therefore, when the RF switch simultaneously turns on the signal branch between the first port and the antenna port and the signal branch between the second port and the antenna port, the parallel resonance formed by the capacitor and the first inductor can suppress the RF signal of the second frequency band that leaks through the RF switch to the branch where the first filter is located, so as to solve the signal crosstalk problem between different branches when the first filter and the second filter are working at the same time (for example, the interference of the RF signal of the second frequency band leaked through the RF switch to the branch where the first filter is located), thereby ensuring the normal operation of the RF front-end module.

[0025] In addition, when both the capacitor and the first inductor are implemented using surface mount devices (SMDs), the insertion loss caused by the parallel capacitor and the first inductor to the RF front-end module is only equivalent to the insertion loss caused by a single SMD device to the RF front-end module, which can reduce the loss of the RF signal in the first frequency band, thereby ensuring the signal quality of the RF signal in the first frequency band.

[0026] According to the second aspect of the present application, an embodiment of the present application further provides a radio frequency front-end module, which includes a substrate and a first filter, a second filter, a first functional module and a radio frequency switch arranged on the substrate; the first filter, the first functional module and the radio frequency switch are arranged in sequence along the first direction, the second filter and the radio frequency switch are arranged in sequence along the second direction, and the first direction and the second direction intersect. The radio frequency switch is provided with a first port, a second port and an antenna port, and the radio frequency switch is used to turn on or off the signal branch between the first port and the antenna port and the signal branch between the second port and the antenna port. The first filter is connected to the first port through the first functional module, and the first filter is used to filter the radio frequency signal of the first frequency band; the second filter is connected to the second port, and the second filter is used to filter the radio frequency signal of the second frequency band, and the second frequency band and the first frequency band at least partially do not overlap; the first functional module is used to suppress the radio frequency signal with a resonant frequency within the second frequency band.

[0027] An embodiment of the present application also provides a radio frequency front-end module, in which a first functional module is connected between a first filter and a first port of a radio frequency switch, and is used to suppress radio frequency signals with a resonant frequency within a second frequency band.

[0028] Therefore, when the RF switch simultaneously turns on the signal branch between the first port and the antenna port and the signal branch between the second port and the antenna port, the first functional module can suppress the RF signal of the second frequency band that leaks through the RF switch to the branch where the first filter is located, so as to solve the signal crosstalk problem between different branches when the first filter and the second filter are working at the same time (for example, the interference of the RF signal of the second frequency band leaked through the RF switch on the branch where the first filter is located), thereby ensuring the normal operation of the RF front-end module.

[0029] In addition, this embodiment arranges the first filter, the first functional module, and the RF switch sequentially along the first direction on the substrate, and arranges the second filter and the RF switch sequentially along the second direction on the substrate, making rational use of the substrate layout space and facilitating the miniaturization of the RF front-end module. Furthermore, because the first filter and the second filter are respectively arranged on two adjacent sides of the RF switch, the isolation between the signal branch containing the RF signal of the first frequency band and the signal branch containing the RF signal of the second frequency band can be improved, thereby avoiding mutual interference between the two RF signals in physical space and ensuring the normal transmission of the two RF signals.

[0030] According to a third aspect of the present application, an embodiment of the present application further provides a radio frequency front-end module, comprising a substrate and a first power amplifier chip, a second power amplifier chip, a first filter, a second filter, and a radio frequency switch disposed on the substrate; the substrate having a first side and a second side opposite to each other in a first direction, and a third side and a fourth side opposite to each other in a second direction, the first side, the third side, the second side, and the fourth side being sequentially connected, and the first direction and the second direction intersecting. The substrate is provided with a first input port and a second input port, the first input port being located on the first side and being used to input a radio frequency signal of a first frequency band; the second input port being located on the third side and being used to input a radio frequency signal of a second frequency band; the first frequency band and the second frequency band at least partially do not overlap. The radio frequency signal of the first frequency band is sequentially transmitted to the radio frequency switch through the first power amplifier chip and the first filter; the radio frequency signal of the second frequency band is sequentially transmitted to the radio frequency switch through the second power amplifier chip and the second filter; the first power amplifier chip and the first filter are sequentially disposed along the second direction, the first power amplifier chip being located on a side of the first filter close to the third side and being disposed adjacent to the first input port. The second power amplifier chip, the second filter and the radio frequency switch are arranged in sequence along the second direction. The second power amplifier chip is located on a side of the second filter close to the third side and is arranged adjacent to the second input port.

[0031] In some possible embodiments, the first power amplifier chip and the second power amplifier chip are spaced apart along the first direction; and the first filter and the radio frequency switch are spaced apart along the first direction.

[0032] Among them, in some possible embodiments, the RF front-end module also includes a first functional module and a second functional module arranged on the substrate; the first functional module is connected between the first filter and the RF switch; the first filter, the first functional module and the RF switch are arranged in sequence along the first direction, and the RF switch is located on the side of the first filter away from the first side; the second functional module is connected between the second filter and the RF switch; the second power amplifier chip, the second filter, the second functional module and the RF switch are arranged in sequence along the second direction, and the RF switch is located on the side of the second power amplifier chip away from the third side.

[0033] In some possible embodiments, the first functional module includes a first inductor and a capacitor, the first inductor is connected between the first filter and the RF switch; the capacitor and the first inductor are connected in parallel to form a parallel resonance, and the resonant frequency of the parallel resonance is within the second frequency band.

[0034] In some possible embodiments, the first functional module further includes a second inductor, one end of the second inductor is connected to a common end of the first filter and the first inductor, and the other end of the second inductor is grounded.

[0035] In some possible embodiments, the second functional module includes a third inductor and a fourth inductor, the fourth inductor is connected between the second filter and the RF switch; one end of the third inductor is connected to a common end of the fourth inductor and the second filter, and the other end of the third inductor is grounded.

[0036] In some possible embodiments, the first frequency band is the B3 frequency band; the second frequency band is the B40 frequency band or the B41 frequency band.

[0037] An embodiment of the present application also provides a radio frequency front-end module, in which a first power amplifier chip is arranged adjacent to a first input port, and a second power amplifier chip is arranged adjacent to a second input port, so that the layout positions of the first power amplifier chip and the second power amplifier chip on the substrate are more reasonable, and the signal transmission paths corresponding to the radio frequency signals of the first frequency band and the radio frequency signals of the second frequency band can be shortened respectively, thereby reducing the transmission loss of the radio frequency signal.

[0038] In addition, the first power amplifier chip and the first filter are arranged in sequence along the second direction, and the second power amplifier chip, the second filter, and the RF switch are arranged in sequence along the second direction, so that the layout of the first filter, the second filter, and the RF switch on the substrate is relatively reasonable, which can avoid mutual interference between the RF signals in the first frequency band and the RF signals in the second frequency band during transmission. Specifically, the first filter and the second filter can be respectively arranged on two adjacent sides of the RF switch to improve the isolation between the signal branch containing the RF signals in the first frequency band and the signal branch containing the RF signals in the second frequency band, thereby avoiding mutual interference between the two RF signals in physical space and ensuring the normal transmission of the two RF signals.

[0039] According to a fourth aspect of the present application, an embodiment of the present application further provides a radio frequency front-end circuit, comprising a first power amplifier, a second power amplifier, a first filter, a second filter, a first functional module, a second functional module, and a radio frequency switch. The radio frequency switch comprises a first end, a second end, and an antenna end, and is configured to connect or disconnect a signal branch between the first end and the antenna end, and a signal branch between the second end and the antenna end. The first power amplifier, the first filter, the first functional module, and the first end of the radio frequency switch are sequentially connected to form a first transmission path, the first transmission path being configured to transmit radio frequency signals in a first frequency band. The second power amplifier, the second filter, the second functional module, and the second end of the radio frequency switch are sequentially connected to form a second transmission path, the second transmission path being configured to transmit radio frequency signals in a second frequency band, the second frequency band at least partially non-overlapping with the first frequency band. The first functional module comprises a first inductor and a capacitor, the first inductor being connected between the first filter and the first end; the capacitor and the first inductor being connected in parallel to form a parallel resonance, the resonant frequency of the parallel resonance being within the second frequency band.

[0040] In some possible embodiments, the first functional module further includes a second inductor, one end of the second inductor is connected to a common end of the first filter and the first inductor, and the other end of the second inductor is grounded.

[0041] In some possible embodiments, the second functional module includes a third inductor and a fourth inductor, the fourth inductor is connected between the second filter and the second end; one end of the third inductor is connected to the common end of the fourth inductor and the second filter, and the other end of the third inductor is grounded.

[0042] An embodiment of the present application further provides a radio frequency front-end circuit, in which a first functional module includes a first inductor and a capacitor connected in parallel, and the resonant frequency of the parallel resonance formed by the first inductor and the capacitor is within a second frequency band.

[0043] Therefore, when the RF switch simultaneously turns on the signal branch between the first end and the antenna end and the signal branch between the second end and the antenna end, the parallel resonance formed by the capacitor and the first inductor can suppress the RF signal of the second frequency band that leaks through the RF switch to the branch where the first filter is located, so as to solve the signal crosstalk problem between different branches when the first filter and the second filter are working at the same time (for example, the interference of the RF signal of the second frequency band leaked through the RF switch to the branch where the first filter is located), thereby ensuring the normal operation of the RF front-end circuit.

[0044] In addition, when the capacitor and the first inductor are both implemented using SMD devices, the insertion loss caused by the parallel capacitor and the first inductor to the RF signal is only equivalent to the insertion loss caused by an SMD device to the RF front-end module, which can reduce the loss of the RF signal in the first frequency band, thereby ensuring the signal quality of the RF signal in the first frequency band. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0046] Figure 1 Schematic diagram of the circuit structure of the RF front-end circuit provided in an embodiment of the present application.

[0047] Figure 2 It is a structural diagram of the RF front-end module provided in the first embodiment of the present application.

[0048] Figure 3 This is another structural diagram of the RF front-end module provided in the first embodiment of the present application.

[0049] Figure 4 yes Figure 2 The Smith chart corresponding to the first filter in the RF front-end module is shown.

[0050] Figure 5 yes Figure 2 The Smith chart corresponding to the second filter in the RF front-end module is shown.

[0051] Figure 6 yes Figure 3 The schematic diagram of the structure of the fourth inductor in the RF front-end module is shown.

[0052] Figure 7 It is a structural diagram of the RF front-end module provided in the second embodiment of the present application.

[0053] Figure 8It is a structural diagram of the RF front-end module provided in the third embodiment of the present application. DETAILED DESCRIPTION

[0054] In order to enable those skilled in the art to better understand the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments in the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention.

[0055] The present application provides an RF front-end circuit 100 and an RF front-end module 300 corresponding to the RF front-end circuit 100. The "RF front-end circuit 100" herein can be understood as the circuit structure corresponding to the RF front-end module 300. This application first introduces the specific circuit structure of the RF front-end circuit 100. In this embodiment, the RF front-end circuit 100 is a key component of a wireless communication device (e.g., a 5G smartphone). It is responsible for converting digital signals into RF signals suitable for wireless transmission and performing operations such as power amplification, filtering, and modulation.

[0056] See also Figure 1 The RF front-end circuit 100 may include a first power amplifier 10, a second power amplifier 12, a first filter 14, a second filter 16, a first functional module 18, a second functional module 20, and an RF switch 22. The RF switch 22 includes a first end 221, a second end 223, and an antenna end 225. The RF switch 22 is configured to connect or disconnect a signal branch between the first end 221 and the antenna end 225, and a signal branch between the second end 223 and the antenna end 225. Specifically, the antenna end 225 is adapted to connect to an antenna to transmit the RF signal processed by the RF front-end circuit 100 to the outside world through the antenna, or to receive a RF signal sent from the outside world through the antenna.

[0057] The first power amplifier 10, the first filter 14, the first functional module 18, and the first end 221 of the RF switch 22 are sequentially connected to form a first transmission path 25, which is used to transmit RF signals in a first frequency band. For example, the first power amplifier 10 can be a push-pull power amplifier, a balanced power amplifier, a Doherty power amplifier, or the like. The first frequency band can be the B3 band, where the B3 band corresponds to a frequency range of 1710 MHz to 1785 MHz.

[0058] The second power amplifier 12, the second filter 16, the second functional module 20 and the second end 223 of the RF switch 22 are connected in sequence to form a second transmission path 27. The second transmission path 27 is used to transmit the RF signal of the second frequency band, and the second frequency band and the first frequency band at least partially do not overlap. Specifically, the second frequency band and the first frequency band may not overlap at all; or they may overlap in part and not overlap in the other part. Exemplarily, the second power amplifier 12 can be a push-pull power amplifier, a balanced power amplifier, a Doherty power amplifier, etc. The second frequency band can be the B40 band or the B41 band. Among them, the frequency range corresponding to the B40 band is 2300MHz to 2400MHz, and the frequency range corresponding to the B41 band is 2495MHz to 2690MHz.

[0059] In this embodiment, the first functional module 18 may include a first inductor L1 and a capacitor C. The first inductor L1 is connected between the first filter 14 and the first end 221. The capacitor C and the first inductor L1 are connected in parallel to form a parallel resonance. The resonant frequency of the parallel resonance is within the second frequency band. Specifically, the specific implementation of the first inductor L1 and the capacitor C can be found in the description of the corresponding embodiment of the RF front-end module 300 later in the specification, and will not be elaborated here.

[0060] Therefore, when the RF switch 22 simultaneously conducts the signal branch between the first end 221 and the antenna end 225 and the signal branch between the second end 223 and the antenna end 225, the parallel resonance formed by the capacitor C and the first inductor L1 can suppress the RF signal of the second frequency band that leaks through the RF switch 22 to the branch where the first filter 14 is located, thereby resolving the signal crosstalk problem between different branches when the first filter 14 and the second filter 16 are operating simultaneously (for example, the interference of the RF signal of the second frequency band leaked through the RF switch 22 on the branch where the first filter 14 is located), thereby ensuring the normal operation of the RF front-end circuit 100. Of course, the capacitor C and the first inductor L1 here can also play the role of impedance matching to improve the transmission efficiency and transmission quality of the RF signal in the first frequency band.

[0061] In addition, when the capacitor C and the first inductor L1 are both implemented using SMD devices, the insertion loss caused by the parallel capacitor C and the first inductor L1 to the RF signal is only equivalent to the insertion loss caused by an SMD device to the RF front-end module, which can reduce the loss of the RF signal in the first frequency band, thereby ensuring the signal quality of the RF signal in the first frequency band.

[0062] It should be noted here that in the related art, the matching circuit between the first filter 14 and the RF switch 22 is usually implemented using a network. For example, the matching circuit can adopt an LCL type network architecture. Therefore, when the two inductors and one capacitor in the LCL type matching circuit are both implemented using SMD devices, the three SMD devices will cause a three-fold deterioration in the insertion loss of the RF front-end module, resulting in a decrease in the signal quality of the RF signal. In the present application, the capacitor C and the first inductor L1 connected in parallel can reduce the insertion loss of the RF front-end module and reduce the loss of the RF signal in the first frequency band, thereby ensuring the signal quality of the RF signal in the first frequency band.

[0063] exist Figure 1 In the illustrated embodiment, the first functional module 18 may further include a second inductor L2, one end of which is connected to the common terminal of the first filter 14 and the first inductor L1, and the other end of which is grounded. The second inductor L2 performs impedance matching to improve the transmission efficiency and quality of RF signals in the first frequency band. For more information on the specific implementation of the second inductor L2, please refer to the description of the corresponding embodiment of the RF front-end module 300 later in the specification and will not be elaborated here.

[0064] It should be noted that in some possible embodiments, if the capacitor C and the first inductor L1 can achieve good impedance matching, the second inductor L2 can be "omitted." In this case, the first functional module 18 can include only the capacitor C and the first inductor L1, thereby reducing the number of electronic components in the first functional module 18, making the hardware layout of the RF front-end module 300 corresponding to the RF front-end circuit 100 more compact, and also saving the hardware cost of the RF front-end module 300.

[0065] exist Figure 1 In the illustrated embodiment, the second functional module 20 may include a third inductor L3 and a fourth inductor L4, with the fourth inductor L4 connected between the second filter 16 and the second end 223. One end of the third inductor L3 is connected to the common end of the fourth inductor L4 and the second filter 16, and the other end of the third inductor L3 is grounded. The third inductor L3 and the fourth inductor L4 here serve to match impedances, thereby improving the transmission quality of RF signals in the second frequency band. Specifically, for the specific implementation of the third inductor L3 and the fourth inductor L4, please refer to the relevant description of the corresponding embodiment of the RF front-end module 300 below in the specification, and will not be elaborated here.

[0066] It should be noted here that the second filter 16 in this embodiment itself can suppress the RF signal in the first frequency band. When the RF switch 22 simultaneously turns on the signal branch between the first end 221 and the antenna end 225 and the signal branch between the second end 223 and the antenna end 225, the second filter 16 can suppress the RF signal in the first frequency band that leaks through the RF switch 22 to the branch where the second filter 16 is located, so as to solve the signal crosstalk problem caused to the second filter 16 when the first filter 14 and the second filter 16 work at the same time, thereby ensuring the normal operation of the RF front-end circuit 100.

[0067] Therefore, there is no need to set a resonant circuit with a resonant frequency within the first frequency band in the signal branch between the second filter 16 and the second end 223. Specifically, there is no need to connect capacitors in parallel at both ends of the fourth inductor L4 to form a resonant circuit (TANK circuit), so as to reduce the number of electronic components in the second functional module 20 and save the hardware cost of the RF front-end circuit 100.

[0068] In addition, since the second filter 16 itself can suppress the RF signal in the first frequency band, only one parallel inductor (i.e., the third inductor L3) needs to be set between the second filter 16 and the second end 223 to match the impedance corresponding to the RF signal in the first frequency band to the open circuit area.

[0069] In some possible embodiments, if the third inductor L3 can achieve good impedance matching, the fourth inductor L4 can be "omitted." In this case, the second functional module 20 can include only the third inductor L3, thereby reducing the number of electronic components in the second functional module 20. This makes the hardware layout of the RF front-end module 300 corresponding to the RF front-end circuit 100 more compact, and also reduces the hardware cost of the RF front-end module 300.

[0070] The following is an introduction to the RF front-end module 300 corresponding to the RF front-end circuit 100 mentioned above. The "RF front-end module 300" here is a component that integrates two or more discrete devices such as RF switches, low-noise amplifiers, filters, duplexers, power amplifiers, etc. into an independent module, thereby improving the integration and hardware performance and miniaturizing the volume. Specifically, the RF front-end module 300 can be applied to wireless communication devices such as smart phones, tablet computers, and smart watches to realize the reception and transmission of RF signals. In addition, with the development of 5G technology, the requirements for the performance of RF front-end modules are getting higher and higher. The technical solution in this application can be applied to 5G RF front-end modules to improve the communication performance of 5G communication equipment.

[0071] See also Figure 2 , Figure 2The figure shows a radio frequency front-end module 300 provided in the first embodiment of the present application. The radio frequency front-end module 300 may include a substrate 30 and a first filter 32, a second filter 34, a first inductor L1, a capacitor C, and a radio frequency switch 36 disposed on the substrate 30. The first filter 32 and the radio frequency switch 36 are disposed sequentially along a first direction X, and the second filter 34 and the radio frequency switch 36 are disposed sequentially along a second direction Y, with the first direction X and the second direction Y intersecting. In some possible examples, the first direction X may be perpendicular to the second direction Y. Therefore, by disposing the first filter 32 and the second filter 34 on adjacent sides of the radio frequency switch 36, the layout space of the substrate 30 can be reasonably utilized in this embodiment, making the overall layout of the radio frequency front-end module 300 more compact. Furthermore, since the first filter 32 and the second filter 34 are disposed on adjacent sides of the radio frequency switch 36, the isolation between the signal branch containing the radio frequency signal of the first frequency band and the signal branch containing the radio frequency signal of the second frequency band can be improved, thereby avoiding mutual interference between the two radio frequency signals in physical space and ensuring the normal transmission of the two radio frequency signals.

[0072] The RF switch 36 may include a first port 361, a second port 363, and an antenna port 365. The RF switch 36 is configured to connect or disconnect the signal branch between the first port 361 and the antenna port 365, and the signal branch between the second port 363 and the antenna port 365. A first filter 32 is connected to the first port 361 and is configured to filter RF signals in a first frequency band. A second filter 34 is connected to the second port 363 and is configured to filter RF signals in a second frequency band, where the second frequency band at least partially does not overlap with the first frequency band.

[0073] Specifically, the second frequency band and the first frequency band may not overlap at all; the second frequency band and the first frequency band may also overlap partially and not overlap in another part. In some possible embodiments, the first frequency band may be smaller than the second frequency band, that is, the frequency interval corresponding to the first frequency band is smaller than the frequency interval corresponding to the second frequency band. For example, the first frequency band may be the B3 frequency band, and the second frequency band may be the B40 frequency band or the B41 frequency band, which is not specifically limited in this embodiment.

[0074] The first inductor L1 is connected between the first filter 32 and the first port 361, and the capacitor C and the first inductor L1 are connected in parallel to form a parallel resonance, the resonant frequency of which is within the second frequency band. Therefore, when the RF switch 36 simultaneously conducts the signal branch between the first port 361 and the antenna port 365 and the signal branch between the second port 363 and the antenna port 365, the parallel resonance formed by the capacitor C and the first inductor L1 can suppress the RF signal of the second frequency band that leaks through the RF switch 36 to the branch where the first filter 32 is located, thereby resolving the signal crosstalk problem between different branches when the first filter 32 and the second filter 34 are operating simultaneously (for example, the interference of the RF signal of the second frequency band leaked through the RF switch 36 on the branch where the first filter 32 is located), thereby ensuring the normal operation of the RF front-end module 300.

[0075] In addition, when the capacitor C and the first inductor L1 are both implemented using SMD devices, the insertion loss caused by the parallel capacitor C and the first inductor L1 to the RF signal is only equivalent to the insertion loss caused by an SMD device to the RF front-end module, which can reduce the loss of the RF signal in the first frequency band, thereby ensuring the signal quality of the RF signal in the first frequency band.

[0076] The specific implementation of the RF front-end module 300 is described below.

[0077] In this embodiment, the substrate 30 is generally rectangular and serves to securely support the components (e.g., the first filter 32, the second filter 34, the first inductor L1, the capacitor C, and the RF switch 36) within the RF front-end module 300. Specifically, the substrate 30 may be a copper-clad laminate. Circuits can be printed on the surface of the substrate 30 by performing processes such as hole processing, electroless copper plating, electrolytic copper plating, and etching on the copper-clad laminate.

[0078] Specifically, the substrate 30 may have a first side 301 and a second side 303 that are opposite to each other in the first direction X, and a third side 305 and a fourth side 307 that are opposite to each other in the second direction Y. The first side 301, the third side 305, the second side 303, and the fourth side 307 are sequentially connected to define an outer contour of the substrate 30. In some possible embodiments, the first direction X may be a width direction of the substrate 30, and the second direction Y may be a length direction of the substrate 30.

[0079] See also Figure 3, the substrate 30 may be provided with a first input port 302 and a second input port 304, and the first input port 302 is located on the first side 301, and is used to input a radio frequency signal of a first frequency band. Specifically, the first input port 302 may be an external port of the radio frequency front-end module 300, which is suitable for being arranged at an edge position of the substrate 30. In some possible embodiments, the first input port 302 may be arranged at a position on the first side 301 relatively close to the third side 305, that is, the distance between the first input port 302 and the third side 305 is smaller than the distance between the first input port 302 and the fourth side 307, so as to facilitate a more reasonable position layout of the electronic components in the radio frequency front-end module 300.

[0080] The second input port 304 is located on the third side 305 and is used to input a radio frequency signal of the second frequency band. Specifically, the second input port 304 can be an external port of the radio frequency front-end module 300, which is suitable for being set at the edge of the substrate 30. In some possible embodiments, the second input port 304 can be set at a position on the third side 305 relatively close to the second side 303, that is, the distance between the second input port 304 and the second side 303 is less than the distance between the second input port 304 and the first side 301, so as to facilitate a more reasonable position layout of the electronic components in the radio frequency front-end module 300.

[0081] In some possible embodiments, the substrate 30 may have a multi-layer metal structure. Specifically, the substrate 30 may include multiple stacked metal layers (not shown), with the multiple metal layers stacked sequentially along the thickness direction of the substrate 30. An insulating dielectric layer may be provided between each adjacent metal layer to provide electrical isolation.

[0082] Exemplarily, the multiple metal layers may include a first metal layer and a second metal layer, wherein the first metal layer may be used for layout routing (for example, equivalent routing of inductors and baluns, connection routing between components, etc.) and for fixing and supporting components in the RF front-end module 300 (for example, the first filter 32, the second filter 34, etc.). The second metal layer may also be used for layout routing (for example, equivalent routing of inductors, etc.), and the second metal layer may also be used for setting signal ports (for example, the first input port 302 and the second input port 304, etc.) and a grounding metal plate. Specifically, the routing located in the first metal layer and the routing located in the second metal layer may be connected through conductive vias, and the conductive vias are provided in the insulating dielectric layer between the first metal layer and the second metal layer, thereby avoiding redundant jumpers, so that the components in the RF front-end module 300 can be more compact and flexible in layout.

[0083] In this embodiment, the RF front-end module 300 may further include a first power amplifier chip 41 and a second power amplifier chip 43 disposed on the substrate 30. The first power amplifier chip 41 is connected between the first input port 302 and the first filter 32 and is configured to amplify RF signals in the first frequency band. Specifically, the first power amplifier chip 41 may employ a single-stage power amplifier circuit architecture or a multi-stage power amplifier circuit architecture. This embodiment does not limit the specific implementation of the first power amplifier chip 41.

[0084] exist Figure 3 In the illustrated embodiment, the first power amplifier chip 41 is disposed adjacent to the first input port 302. "Adjacent" herein can be understood as meaning that the distance between the first power amplifier chip 41 and the first input port 302 is less than or equal to a predetermined distance, wherein the predetermined distance can be less than or equal to 1 mm. For example, the predetermined distance can be 0.1 mm, 0.5 mm, or the like. By disposing the first power amplifier chip 41 and the first input port 302 adjacent to each other in this embodiment, the length of the signal transmission path between the first power amplifier chip 41 and the first input port 302 can be shortened, thereby reducing transmission loss of RF signals in the first frequency band.

[0085] In some possible embodiments, the first power amplifier chip 41 is disposed on a side of the first filter 32 close to the third side 305. Since the first input port 302 is also disposed close to the third side 305, the layout of the first power amplifier chip 41 and the first filter 32 on the substrate 30 is more reasonable. Specifically, the first power amplifier chip 41 and the first filter 32 can be disposed sequentially along the second direction Y.

[0086] In this embodiment, a second power amplifier chip 43 is connected between the second input port 304 and the second filter 34. The second power amplifier chip 43 is configured to amplify the power of radio frequency signals in the second frequency band. Specifically, the second power amplifier chip 43 can employ a single-stage power amplifier circuit architecture or a multi-stage power amplifier circuit architecture. This embodiment does not limit the specific implementation of the second power amplifier chip 43.

[0087] exist Figure 3In the illustrated embodiment, the second power amplifier chip 43 is disposed adjacent to the second input port 304. "Adjacent" herein can be understood as meaning that the distance between the second power amplifier chip 43 and the second input port 304 is less than or equal to a predetermined distance, wherein the predetermined distance can be less than or equal to 1 mm. For example, the predetermined distance can be 0.1 mm, 0.5 mm, or the like. By disposing the second power amplifier chip 43 and the second input port 304 adjacent to each other in this embodiment, the length of the signal transmission path between the second power amplifier chip 43 and the second input port 304 can be shortened, thereby reducing transmission loss of RF signals in the second frequency band.

[0088] In some possible embodiments, the second power amplifier chip 43 is disposed on a side of the second filter 34 close to the third side 305. Since the second input port 304 is also disposed on the third side 305, the layout of the second power amplifier chip 43 and the second filter 34 on the substrate 30 is more reasonable. It is not difficult to see that the first power amplifier chip 41 and the second power amplifier chip 43 in this embodiment are generally located in the area of ​​the substrate 30 close to the third side 305.

[0089] Specifically, the first power amplifier chip 41 and the second power amplifier chip 43 are arranged at intervals along the first direction X, and the second power amplifier chip 43 is arranged on the side of the first power amplifier chip 41 facing the second side 303. Since the second input port 304 is also arranged close to the second side 303, the layout of the first power amplifier chip 41 and the second power amplifier chip 43 on the substrate 30 is more reasonable.

[0090] It is not difficult to find here that the first power amplifier chip 41 in this embodiment is equivalent to Figure 1 The first power amplifier 10 and the second power amplifier chip 43 in the embodiment shown are equivalent to Figure 1 The second power amplifier 12 in the embodiment shown. In the absence of conflict, the features of the first power amplifier 10 and the first power amplifier chip 41 can be combined with each other, and the features of the second power amplifier 12 and the second power amplifier chip 43 can be combined with each other. For example, in the absence of conflict, Figure 1 The first power amplifier 10 in the illustrated embodiment may have corresponding features of the first power amplifier chip 41 . Of course, the first power amplifier chip 41 in this embodiment may also have corresponding features of the first power amplifier 10 .

[0091] In this embodiment, the first filter 32 is connected between the first power amplifier chip 41 and the first port 361 of the RF switch 36 and is used to filter RF signals in the first frequency band. Specifically, the first filter 32 can be a bandpass filter that allows RF signals in the first frequency band to pass through and blocks RF signals in other frequency bands. In some possible embodiments, the first filter 32 can be a dedicated filter chip. This embodiment does not limit the specific implementation of the first filter 32.

[0092] exist Figure 3 In the illustrated embodiment, the first filter 32 is located on the side of the first power amplifier chip 41 facing the fourth side 307, and the first filter 32 and the RF switch 36 are spaced apart along the first direction X. The RF switch 36 is located on the side of the first filter 32 facing the second side 303. In other words, in this embodiment, the first filter 32 and the first power amplifier chip 41 are substantially located in the area of ​​the substrate 30 near the first side 301.

[0093] In some possible embodiments, when the first frequency band is the B3 frequency band and the second frequency band is the B41 frequency band, the first filter 32 may be a B3 filter. Figure 4 , Figure 4 is the Smith chart corresponding to the B3 filter. Specifically, Figure 4 The left figure in FIG is a schematic diagram of the impedance of the B3 filter to the RF signal in the B41 frequency band when no matching circuit is provided between the B3 filter and the first port 361 of the RF switch 36 . Figure 4 The right figure in FIG is a schematic diagram of the impedance of the B3 filter to the RF signal in the B3 frequency band when no matching circuit is provided between the B3 filter and the first port 361 of the RF switch 36 .

[0094] It is not difficult to find here that the impedance position of the B3 filter to the RF signal in the B41 frequency band is not at the outermost edge of the circular diagram. Therefore, a resonant circuit (Tank circuit) needs to be set between the B3 filter and the first port 361 of the RF switch 36 to make the impedance of the B3 filter to the RF signal in the B41 frequency band in an open circuit state.

[0095] Specifically, the first filter 32 and the RF switch 36 are spaced apart in the first direction X to form a first gap 321. The first inductor L1 and the capacitor C are disposed within the first gap 321. The first inductor L1 is connected between the first filter 32 and the first port 361. The capacitor C and the first inductor L1 are connected in parallel to form a parallel resonance. The resonant frequency of the parallel resonance is within the second frequency band. In other words, the first inductor L1 and the capacitor C form a resonant circuit between the first filter 32 and the first end 361 of the RF switch 36.

[0096] In some possible embodiments, researchers can select a suitable resonant point to make the impedance of the first filter 32 to the RF signals in the second frequency band more open, thereby achieving better bandwidth matching. Furthermore, the tank circuit formed by the capacitor C and the first inductor L1 in this embodiment can resolve the signal crosstalk problem caused to the first filter 32 when the first filter 32 and the second filter 34 operate simultaneously, thereby ensuring the normal operation of the first filter 32. This tank circuit can also ensure that when the first power amplifier chip 41 is operating, no RF signals in the second frequency band are transmitted from the first filter 32 to the first power amplifier chip 41, thereby avoiding the deterioration of the receive band noise (RX band noise) corresponding to the second frequency band.

[0097] In some possible embodiments, the first inductor L1 and the capacitor C can be arranged along the second direction Y within the first gap 321 to save layout space on the substrate 30 and make the overall layout of the RF front-end module 300 more compact and reasonable. Specifically, the inductance of the first inductor L1 can be greater than or equal to 1nH and less than or equal to 3nH. For example, the inductance of the first inductor L1 can be 1nH, 2nH, 3nH, etc.

[0098] In one possible example, both the first inductor L1 and the capacitor C are mounted within the first gap 321 using surface mount devices (SMDs) to further save layout space on the substrate 30. In another possible example, since the inductance of the first inductor L1 is approximately 2 nH, indicating that the inductance of the first inductor L1 is relatively small, the first inductor L1 can be wound within the first gap 321 using a wire, and the capacitor C can be mounted within the first gap 321 using a surface mount device. This can save the hardware cost of the first inductor L1 and, in turn, reduce the overall hardware cost of the RF front-end module 300.

[0099] Please refer again Figure 3 The RF front-end module 300 may further include a second inductor L2, which participates in impedance matching to improve the signal output quality of the RF signal in the first frequency band. Specifically, one end of the second inductor L2 is connected to the common end of the first filter 32 and the first inductor L1, and the other end of the second inductor L2 is grounded. Specifically, in terms of circuit architecture, the second inductor L2 is directly connected to the first filter 32 and is arranged closest to the first filter 32, which can make the overall layout corresponding to the RF front-end module 300 more compact and reasonable.

[0100] In some possible embodiments, the second inductor L2 can be arranged in the first gap 321 to save layout space of the substrate 30. Specifically, the second inductor L2, the first inductor L1 and the capacitor C are arranged along the second direction Y. It should be noted that this embodiment does not limit the specific arrangement order of the second inductor L2, the first inductor L1 and the capacitor C. Figure 3 In the illustrated embodiment, the second inductor L2, the first inductor L1, and the capacitor C are arranged in sequence along the second direction Y from the fourth side 307 to the third side 305. In other possible embodiments, the capacitor C may be disposed between the first inductor L1 and the second inductor L2. For example, along the second direction Y from the fourth side 307 to the third side 305, the second inductor L2, the capacitor C, and the first inductor L1 are arranged in sequence.

[0101] Specifically, the inductance of the second inductor L2 can be greater than or equal to 4 nH and less than or equal to 10 nH. For example, the inductance of the second inductor L2 can be 4 nH, 6 nH, 8 nH, 10 nH, and so on. Since the inductance of the second inductor L2 is approximately 7 nH, it indicates that the inductance of the second inductor L2 is relatively large. Therefore, the second inductor L2 can be mounted in the first gap 321 as a surface mount device to further save layout space on the substrate 30.

[0102] It is not difficult to find here that the first filter 32, the capacitor C, the first inductor L1 and the second inductor L2 in this embodiment are equivalent to Figure 1 In the embodiment shown, the first filter 14, the capacitor C, the first inductor L1 and the second inductor L2. In the absence of conflict, the features of the two components with the same name in the two embodiments can be combined with each other. For example, in the absence of conflict, Figure 1 The features of the capacitor C in the illustrated embodiment may be combined with the features of the capacitor C in this embodiment.

[0103] In this embodiment, the second filter 34 is connected between the second power amplifier chip 43 and the second port 363 of the RF switch 36, and is used to filter the RF signals in the second frequency band. Specifically, the second filter 34 can be a bandpass filter that allows RF signals in the second frequency band to pass through and blocks RF signals in other frequency bands. In some possible embodiments, the second filter 34 can be a dedicated filter chip. This embodiment does not limit the specific implementation of the second filter 34.

[0104] exist Figure 3In the illustrated embodiment, the second filter 34 is located on the side of the second power amplifier chip 43 facing the fourth side 307, and the second power amplifier chip 43, the second filter 34, and the RF switch 36 are arranged in sequence along the second direction Y. The RF switch 36 is located on the side of the second filter 34 facing the fourth side 307. In other words, the RF switch 36, the second filter 34, and the second power amplifier chip 43 in this embodiment are generally located in the area of ​​the substrate 30 near the second side 303.

[0105] In some possible embodiments, when the first frequency band is the B3 frequency band and the second frequency band is the B41 frequency band, the second filter 34 may be a B41 filter. Figure 5 , Figure 5 is the Smith chart corresponding to the B41 filter. Specifically, Figure 5 The left figure in FIG is a schematic diagram of the impedance of the B41 filter to the RF signal in the B3 frequency band when no matching circuit is provided between the B41 filter and the second port 363 of the RF switch 36 . Figure 5 The right figure in FIG is a schematic diagram of the impedance of the B41 filter to the RF signal in the B41 frequency band when no matching circuit is provided between the B41 filter and the second port 363 of the RF switch 36 .

[0106] It's not difficult to see here that the impedance of the B41 filter to RF signals in the B3 frequency band is located right at the very edge of the circular diagram, while the impedance of the B3 filter to RF signals in the B41 frequency band is not located at the very edge of the circular diagram. This indicates that the impedance of the second filter 34 to RF signals in the first frequency band is closer to an open-circuit state than the impedance of the first filter 32 to RF signals in the second frequency band. This is because the second filter 34 (i.e., the B41 filter) is configured to have a resonant circuit with a resonant frequency within the first frequency band. Therefore, there is no need to provide a resonant circuit (tank circuit) between the B41 filter and the second port 363 of the RF switch 36. In other words, a resonant circuit with a resonant frequency within the first frequency band can be omitted in the signal branch between the second filter 34 and the second port 363, thereby saving hardware cost and layout space for the RF front-end module 300.

[0107] In some possible embodiments, a parallel inductor can be connected between the second filter 34 and the second port 363 to place the impedance of the B41 filter to the RF signal in the B3 frequency band in an open circuit state. Therefore, when the RF switch 36 simultaneously conducts the signal branch between the first port 361 and the antenna port 365 and the signal branch between the second port 363 and the antenna port 365, the parallel inductor and the resonant circuit provided in the second filter 34 can suppress the RF signal in the first frequency band that enters the branch where the second filter 34 is located through the RF switch 36, thereby solving the signal crosstalk problem caused to the second filter 34 when the first filter 32 and the second filter 34 are operating simultaneously, thereby ensuring the normal operation of the second filter 34.

[0108] Please refer again Figure 3 The RF front-end module 300 may further include a third inductor L3, which is used to match the impedance of the second filter 34 to the RF signal in the first frequency band to an open circuit state. Specifically, the third inductor L3 is a parallel inductor between the second filter 34 and the second port 363, wherein a first end 372 of the third inductor L3 is connected to the second filter 34, and a second end 374 of the third inductor L3 is grounded.

[0109] exist Figure 3 In the illustrated embodiment, the second filter 34 and the RF switch 36 are spaced apart in the second direction Y to form a second gap 341. The third inductor L3 is disposed within the second gap 341 to conserve layout space on the substrate 30 and make the overall layout of the RF front-end module 300 more compact and reasonable. Specifically, the inductance of the third inductor L3 is greater than or equal to 5nH and less than or equal to 8nH. For example, the inductance of the third inductor L3 can be 5nH, 6nH, 7nH, 8nH, and so on.

[0110] Since the inductance of the third inductor L3 is approximately 6 nH, it indicates that the inductance of the third inductor L3 is relatively large. Therefore, the third inductor L3 can be mounted within the second gap 341 as a surface mount device, further saving layout space on the substrate 30. Specifically, the first end 372 of the third inductor L3 and the second end 374 of the third inductor L3 are opposite ends of the third inductor L3 in the first direction X. In other words, the length direction of the third inductor L3 is aligned with the extension direction of the second gap 341, allowing the third inductor L3 to be more compactly arranged within the second gap 341, thereby saving layout space on the substrate 30.

[0111] In some possible embodiments, the RF front-end module 300 may further include a fourth inductor L4, which participates in impedance matching to improve the signal output quality of the RF signal in the second frequency band. Specifically, one end of the fourth inductor L4 is connected to the second filter 34, and the other end of the fourth inductor L4 is connected to the second port 363. The first end of the third inductor L3 is connected to the common end of the fourth inductor L4 and the second filter 34.

[0112] Specifically, the inductance value of the fourth inductor L4 is greater than or equal to 0.2nH and less than or equal to 0.5nH. For example, the inductance value of the fourth inductor L4 can be 0.2nH, 0.3nH, 0.4nH, 0.5nH, etc. Since the inductance value of the fourth inductor L4 is around 0.3nH, it means that the inductance value of the fourth inductor L4 is relatively small. Therefore, the fourth inductor L4 can be wound in the second gap 341 in the form of a trace to save the hardware cost of the RF front-end module 300. Figure 3 In the illustrated embodiment, the fourth inductor L4 and the third inductor L3 are arranged along the first direction X, so that the fourth inductor L4 and the third inductor L3 can be more compactly arranged in the second gap 341 to save layout space of the substrate 30 .

[0113] In some possible embodiments, the fourth inductor L4 may include a first trace 392, a second trace 394, and a third trace 396 connected in sequence. Figure 3 and Figure 6 The first trace 392 is annularly disposed in the second gap 341 and connected to the second port 363. Specifically, the first trace 392 may be substantially C-shaped to increase the overall length of the first trace 392.

[0114] The second trace 394 is looped within the second gap 341 and connected between the first trace 396 and the third trace 396. Specifically, the second trace 394 may wrap around the substrate 30 at least once to increase the overall length of the second trace 394. In some possible embodiments, the first trace 392 and the second trace 394 may be respectively wound on different metal layers, and the projection of the first trace 392 in the thickness direction of the substrate 30 may at least partially overlap with the projection of the second trace 394, thereby reducing the overall space occupied by the first trace 392 and the second trace 394 on the substrate 30. Specifically, the first trace 392 and the second trace 394 may be connected via conductive vias provided in the insulating dielectric layer, thereby making the overall structure of the fourth inductor L4 more compact.

[0115] exist Figure 6In the illustrated embodiment, the common end formed by the connection of the second trace 394 and the third trace 396 is located within the second gap 341 and is connected to the first end of the third inductor L3. The third trace 396 is connected to the second filter 34. Specifically, the second trace 394 and the third trace 396 are located on the same metal layer. In some possible embodiments, the second trace 394 and the third trace 396 can be the same metal trace. To facilitate description of the connection between the fourth inductor L4 and the third inductor L3, this embodiment divides the metal trace into two parts (i.e., the second trace 394 and the third trace 396).

[0116] It is not difficult to find here that the first trace 392 and the second trace 394 in this embodiment can be equivalent to the fourth inductor L4 connected between the third inductor L3 and the RF switch 36, and the fourth inductor L4 is connected to the second filter 34 through the third trace 396. In addition, the second filter 34, the third inductor L3 and the fourth inductor L4 in this embodiment are equivalent to Figure 1 The second filter 16, the third inductor L3 and the fourth inductor L4 in the embodiment shown. In the absence of conflict, the features of two components with the same name in the two embodiments can be combined with each other.

[0117] In this embodiment, the RF switch 36 is used to open or close the signal branch between the first port 361 and the antenna port 365, and the signal branch between the second port 363 and the antenna port 365, so that the RF signal in the first frequency band and the RF signal in the second frequency band can be selectively output to the outside world through the RF switch 36. Specifically, the RF switch 36 can be an RF switch chip, and this embodiment does not limit the specific implementation of the RF switch 36.

[0118] The first embodiment of the present application provides a radio frequency front-end module 300, which may include a substrate 30 and a first filter 32, a second filter 34, a first inductor L1, a capacitor C, and a radio frequency switch 36 disposed on the substrate 30. The first filter 32 and the radio frequency switch 36 are disposed sequentially along a first direction X, and the second filter 34 and the radio frequency switch 36 are disposed sequentially along a second direction Y, where the first direction X and the second direction Y intersect.

[0119] The RF switch 36 may include a first port 361, a second port 363, and an antenna port 365. The RF switch 36 is configured to connect or disconnect the signal branch between the first port 361 and the antenna port 365, and the signal branch between the second port 363 and the antenna port 365. A first filter 32 is connected to the first port 361 and is configured to filter RF signals in a first frequency band. A second filter 34 is connected to the second port 363 and is configured to filter RF signals in a second frequency band, where the second frequency band at least partially does not overlap with the first frequency band.

[0120] The first inductor L1 is connected between the first filter 32 and the first port 361, and the capacitor C and the first inductor L1 are connected in parallel to form a parallel resonance, the resonant frequency of which is within the second frequency band. Therefore, when the RF switch 36 simultaneously conducts the signal branch between the first port 361 and the antenna port 365 and the signal branch between the second port 363 and the antenna port 365, the parallel resonance formed by the capacitor C and the first inductor L1 can suppress the RF signal of the second frequency band that leaks through the RF switch 36 to the branch where the first filter 32 is located, thereby resolving the signal crosstalk problem between different branches when the first filter 32 and the second filter 34 are operating simultaneously (for example, the interference of the RF signal of the second frequency band leaked through the RF switch 36 on the branch where the first filter 32 is located), thereby ensuring the normal operation of the RF front-end module 300.

[0121] In addition, when the capacitor C and the first inductor L1 are both implemented using SMD devices, the insertion loss caused by the parallel capacitor C and the first inductor L1 to the RF signal is only equivalent to the insertion loss caused by an SMD device to the RF front-end module, which can reduce the loss of the RF signal in the first frequency band, thereby ensuring the signal quality of the RF signal in the first frequency band.

[0122] See also Figure 7 , Figure 7 A radio frequency front-end module 500 provided in the second embodiment of the present application is shown. The radio frequency front-end module 500 may include a substrate 50 and a first filter 52, a second filter 54, a first functional module 56 and a radio frequency switch 58 arranged on the substrate 50. The first filter 52, the first functional module 56 and the radio frequency switch 58 are arranged in sequence along the first direction X, and the second filter 54 and the radio frequency switch 58 are arranged in sequence along the second direction Y, and the first direction X and the second direction Y intersect. In this embodiment, the first filter 52 and the second filter 54 are respectively arranged on both sides adjacent to the radio frequency switch 58, which can reasonably utilize the layout space of the substrate 50 and is conducive to the miniaturization design of the radio frequency front-end module 500. Furthermore, since the first filter 52 and the second filter 54 are respectively arranged on both sides adjacent to the radio frequency switch 58, the isolation between the signal branch where the radio frequency signal of the first frequency band is located and the signal branch where the radio frequency signal of the second frequency band is located can be improved, thereby avoiding mutual interference between the two radio frequency signals in physical space to ensure the normal transmission of the two radio frequency signals.

[0123] The RF switch 58 has a first port 581, a second port 583, and an antenna port 585. The RF switch 58 is used to open or close the signal branch between the first port 581 and the antenna port 585, and the signal branch between the second port 583 and the antenna port 585. The first filter 52 is connected to the first port 581 via the first functional module 56. The first filter 52 is used to filter RF signals in a first frequency band. The second filter 54 is connected to the second port 583. The second filter 54 is used to filter RF signals in a second frequency band. The second frequency band and the first frequency band at least partially do not overlap.

[0124] The first functional module 56 is configured to suppress RF signals with a resonant frequency within the second frequency band. Therefore, when the RF switch 58 simultaneously conducts the signal branch between the first port 581 and the antenna port 585 and the signal branch between the second port 583 and the antenna port 585, the first functional module 56 can suppress RF signals in the second frequency band that leak through the RF switch 58 into the branch where the first filter 52 is located. This resolves the signal crosstalk issue between different branches when the first filter 52 and the second filter 54 are operating simultaneously (for example, interference from RF signals in the second frequency band leaked through the RF switch 58 on the branch where the first filter 52 is located), thereby ensuring the normal operation of the RF front-end module 500.

[0125] Specifically, the features of the substrate 50, the first filter 52, the second filter 54, and the RF switch 58 can respectively refer to and follow the features of the substrate 30, the first filter 32, the second filter 34, and the RF switch 36 in the first embodiment. To save space, they are not described here one by one. Similarly, in the absence of conflict, the substrate 30, the first filter 32, the second filter 34, and the RF switch 36 in the first embodiment can also respectively have the features of the substrate 50, the first filter 52, the second filter 54, and the RF switch 58 in the second embodiment, and the features of the two embodiments can be combined with each other.

[0126] In some possible embodiments, the first functional module 56 may include a first inductor L1 and a capacitor C, wherein the first inductor L1 is connected between the first filter 52 and the first port 581, and the capacitor C and the first inductor L1 are connected in parallel to form a parallel resonance, where the resonant frequency of the parallel resonance is within the second frequency band. Specifically, the characteristics of the first inductor L1 and the capacitor C can refer to and follow the characteristics of the first inductor L1 and the capacitor C in the first embodiment, respectively, and are not further described here to save space.

[0127] It should be noted here that, in the absence of conflict, any other one or more features of the RF front-end module 300 corresponding to the first embodiment can be combined with the RF front-end module 500 corresponding to the second embodiment. To save space, they will not be described one by one here.

[0128] See also Figure 8 , Figure 8 A radio frequency front-end module 600 provided in a third embodiment of the present application is shown. The radio frequency front-end module 600 may include a substrate 60 and a first power amplifier chip 61, a second power amplifier chip 63, a first filter 65, a second filter 67, and a radio frequency switch 69 disposed on the substrate 60. The substrate 60 has a first side 601 and a second side 603 that are opposite to each other in a first direction X, and a third side 605 and a fourth side 607 that are opposite to each other in a second direction Y. The first side 601, the third side 605, the second side 603, and the fourth side 607 are connected in sequence, and the first direction X and the second direction Y intersect.

[0129] The substrate 60 is provided with a first input port 602 and a second input port 604. The first input port 602 is located on the first side 601 and is used to input RF signals of the first frequency band; the second input port 604 is located on the third side 605 and is used to input RF signals of the second frequency band; the first frequency band and the second frequency band at least partially do not overlap. Specifically, the first frequency band can be the B3 frequency band; the second frequency band can be the B40 frequency band or the B41 frequency band. The RF signal of the first frequency band is sequentially transmitted to the RF switch 69 through the first power amplifier chip 61 and the first filter 65. The RF signal of the second frequency band is sequentially transmitted to the RF switch 69 through the second power amplifier chip 63 and the second filter 67.

[0130] The first power amplifier chip 61 and the first filter 65 are sequentially arranged along the second direction Y. The first power amplifier chip 61 is located on a side of the first filter 65 close to the third side 605 and is adjacent to the first input port 602. The second power amplifier chip 63, the second filter 67, and the RF switch are sequentially arranged along the second direction Y. The second power amplifier chip 63 is located on a side of the second filter 67 close to the third side 605 and is adjacent to the second input port 604.

[0131] On the one hand, since the first power amplifier chip 61 is arranged adjacent to the first input port 602, and the second power amplifier chip 63 is arranged adjacent to the second input port 304, the layout positions of the first power amplifier chip 61 and the second power amplifier chip 63 on the substrate 60 are more reasonable, and the signal transmission paths corresponding to the RF signals of the first frequency band and the RF signals of the second frequency band can be shortened respectively, thereby reducing the transmission loss of the RF signals.

[0132] On the other hand, the first power amplifier chip 61 and the first filter 65 are arranged in sequence along the second direction Y, and the second power amplifier chip 63, the second filter 67, and the RF switch 69 are arranged in sequence along the second direction Y. This makes the layout of the first filter 65, the second filter 67, and the RF switch 69 on the substrate 60 more reasonable, and can avoid the RF signal of the first frequency band and the RF signal of the second frequency band from interfering with each other during transmission. Specifically, the first filter 65 and the second filter 67 can be respectively arranged on two adjacent sides of the RF switch 69 to improve the isolation between the signal branch where the RF signal of the first frequency band is located and the signal branch where the RF signal of the second frequency band is located, thereby avoiding mutual interference between the two RF signals in physical space and ensuring the normal transmission of the two RF signals.

[0133] In some possible embodiments, the first power amplifier chip 61 and the second power amplifier chip 63 are spaced apart along the first direction X, and the first filter 65 and the radio frequency switch are spaced apart along the first direction X. Specifically, the features of the substrate 60, the first input port 602, the second input port 604, the first power amplifier chip 61, the second power amplifier chip 63, the first filter 65, the second filter 67, and the radio frequency switch 69 can respectively refer to and use the features of the substrate 30, the first input port 302, the second input port 304, the first power amplifier chip 41, the second power amplifier chip 43, the first filter 32, the second filter 34, and the radio frequency switch 36 in the first embodiment. To save space, they are not described one by one here.

[0134] In some possible embodiments, the RF front-end module 600 may further include a first functional module 72 and a second functional module 74 disposed on the substrate 60. The first functional module 72 is connected between the first filter 65 and the RF switch 69. The first filter 65, the first functional module 72, and the RF switch 69 are sequentially arranged along the first direction X, with the RF switch 69 being located on a side of the first filter 65 away from the first side 601. The second functional module 74 is connected between the second filter 67 and the RF switch 69. The second power amplifier chip 63, the second filter 67, the second functional module 74, and the RF switch 69 are sequentially arranged along the second direction Y, with the RF switch 69 being located on a side of the second power amplifier chip 63 away from the third side 605.

[0135] In this embodiment, the first filter 65 and the first power amplifier chip 61 are roughly located in the area of ​​the substrate 60 close to the first side 601, and the RF switch 69, the second filter 67 and the second power amplifier chip 63 are roughly located in the area of ​​the substrate 60 close to the second side 603. This can ensure that the RF signals of the first frequency band and the RF signals of the second frequency band will not cross during transmission, thereby ensuring the normal operation of the RF front-end module 600.

[0136] In addition, the first power amplifier chip 61 and the second power amplifier chip 63 are roughly located in the area of ​​the substrate 60 close to the third side 605, and the first filter 65 and the RF switch 69 are roughly located in the area of ​​the substrate 60 close to the fourth side 607, which can make the overall wiring layout of the RF front-end module 600 more reasonable to reduce the transmission loss of the RF signal.

[0137] In some possible embodiments, the first functional module 72 may include a first inductor L1 and a capacitor C, the first inductor L1 is connected between the first filter 65 and the RF switch 69, the capacitor C and the first inductor L1 are connected in parallel to form a parallel resonance, and the resonant frequency of the parallel resonance is within the second frequency band.

[0138] In some possible embodiments, the first functional module 72 may further include a second inductor L2 , one end of the second inductor L2 is connected to a common end of the first filter 65 and the first inductor L1 , and the other end of the second inductor L2 is grounded.

[0139] Specifically, the features of the first inductor L1 , the capacitor C, and the second inductor L2 may refer to and follow the features of the first inductor L1 , the capacitor C, and the second inductor L2 in the first embodiment, and are not described one by one here to save space.

[0140] In some possible embodiments, the second functional module 74 may include a third inductor L3 and a fourth inductor L4, where the fourth inductor L4 is connected between the second filter 67 and the RF switch 69. One end of the third inductor L3 is connected to a common end of the fourth inductor L4 and the second filter 67, and the other end of the third inductor L3 is grounded.

[0141] Specifically, the features of the third inductor L3 and the fourth inductor L4 may refer to and follow the features of the third inductor L3 and the fourth inductor L4 in the first embodiment, and are not described in detail here to save space.

[0142] In the specification of this application, certain words are used to refer to specific components in the specification and claims. Those skilled in the art should understand that hardware manufacturers may use different terms to refer to the same component. The specification and claims do not use the difference in name as a way to distinguish components, but use the difference in function of the components as the criterion for distinction. For example, "including" mentioned throughout the specification and claims is an open term and should be interpreted as "including but not limited to"; "substantially" means that those skilled in the art can solve the technical problem within a certain error range and basically achieve the technical effect.

[0143] In the description of this application, it should be understood that the terms "upper", "lower", "front", "back", "left", "right", "inside", etc. indicating directions or positional relationships are based on the directions or positional relationships shown in the accompanying drawings. They are only used to simplify the description for the convenience of describing this application, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction. Therefore, they should not be understood as limitations on this application.

[0144] In this application, unless otherwise expressly specified or limited, terms such as "mounted," "connected," "connect," and "fixed" should be interpreted broadly. For example, these terms may refer to fixed, removable, or integral connections; mechanical or electrical connections; direct or indirect connections through an intermediary; internal communication between two components; or mere surface contact. Those skilled in the art will understand the specific meanings of these terms in this application based on the specific circumstances.

[0145] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and features of different embodiments or examples without contradiction.

[0146] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of such features. Throughout the description of this application, "plurality" means at least two, for example, two, three, etc., unless otherwise specifically defined.

[0147] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A radio frequency front-end module, characterized in that: The device comprises a substrate and a first filter, a second filter, a first inductor, a capacitor, and a radio frequency switch arranged on the substrate; the first filter and the radio frequency switch are arranged in sequence along a first direction, the second filter and the radio frequency switch are arranged in sequence along a second direction, and the first direction and the second direction intersect; The RF switch is provided with a first port, a second port and an antenna port, and the RF switch is used to connect or disconnect a signal branch between the first port and the antenna port and a signal branch between the second port and the antenna port; The first filter is connected to the first port, and the first filter is used to filter radio frequency signals in a first frequency band; the second filter is connected to the second port, and the second filter is used to filter radio frequency signals in a second frequency band, and the second frequency band and the first frequency band at least partially do not overlap; The first inductor is connected between the first filter and the first port; the capacitor and the first inductor are connected in parallel to form a parallel resonance, and the resonant frequency of the parallel resonance is within the second frequency band.

2. The RF front-end module according to claim 1, wherein: The second filter is configured as a resonant circuit having a resonant frequency within the first frequency band.

3. The RF front-end module according to claim 1, wherein: The impedance of the second filter for radio frequency signals in the first frequency band is closer to an open circuit state than the impedance of the first filter for radio frequency signals in the second frequency band.

4. The RF front-end module according to claim 1, wherein: A resonant circuit having a resonant frequency within the first frequency band is not provided in the signal branch between the second filter and the second port.

5. The RF front-end module according to claim 1, wherein: The first filter and the radio frequency switch are spaced apart in the first direction to form a first gap; The first inductor and the capacitor are arranged in the first gap, and the first inductor and the capacitor are arranged along the second direction.

6. The RF front-end module according to claim 5, wherein: The first inductor and the capacitor are both mounted in the first gap in the form of surface mount devices; or The first inductor is wound in the first gap in the form of a wiring, and the capacitor is mounted in the first gap in the form of a surface mounted device.

7. The RF front-end module according to claim 5, wherein: The inductance of the first inductor is greater than or equal to 1 nH and less than or equal to 3 nH.

8. The RF front-end module according to claim 5, wherein: The RF front-end module further includes a second inductor, one end of the second inductor is connected to a common end of the first filter and the first inductor, and the other end of the second inductor is grounded; The second inductor is arranged in the first gap, and the second inductor, the first inductor and the capacitor are arranged along the second direction.

9. The RF front-end module according to claim 8, wherein: The second inductor is mounted in the first gap in the form of a surface mount device; the inductance value of the second inductor is greater than or equal to 4nH and less than or equal to 10nH.

10. The RF front-end module according to claim 1, wherein: The RF front-end module further includes a third inductor, a first end of the third inductor is connected to the second filter, and a second end of the third inductor is grounded; The second filter and the radio frequency switch are spaced apart in the second direction to form a second gap; and the third inductor is arranged in the second gap.

11. The RF front-end module according to claim 10, wherein: The third inductor is mounted in the second gap in the form of a surface mount device; the inductance value of the third inductor is greater than or equal to 5nH and less than or equal to 8nH; The first end of the third inductor and the second end of the third inductor are respectively two opposite ends of the third inductor in the first direction.

12. The RF front-end module according to claim 10, wherein: The RF front-end module further includes a fourth inductor, one end of the fourth inductor is connected to the second filter, and the other end of the fourth inductor is connected to the second port; a first end of the third inductor is connected to a common end of the fourth inductor and the second filter; The fourth inductor is wound in the second gap in the form of a wiring; the inductance value of the fourth inductor is greater than or equal to 0.2nH and less than or equal to 0.5nH; the fourth inductor and the third inductor are arranged along the first direction.

13. The RF front-end module according to claim 12, wherein: The fourth inductor includes a first wiring, a second wiring and a third wiring connected in sequence; The first wiring is looped in the second gap and connected to the second port; The second trace is looped in the second gap; a common end formed by connecting the second trace and the third trace is located in the second gap and connected to the first end of the third inductor; The third trace is connected to the second filter.

14. The RF front-end module according to claim 13, wherein: The substrate is provided with a plurality of metal layers stacked on top of each other; The first routing line and the second routing line are respectively arranged on different metal layers; the second routing line and the third routing line are located on the same metal layer.

15. The radio frequency front-end module according to any one of claims 1 to 14, characterized in that: The first frequency band is smaller than the second frequency band.

16. The radio frequency front-end module according to any one of claims 1 to 14, characterized in that: The first frequency band is the B3 frequency band; The second frequency band is the B40 frequency band or the B41 frequency band.

17. The radio frequency front-end module according to any one of claims 1 to 14, characterized in that: The substrate has a first side and a second side opposite to each other in the first direction, and a third side and a fourth side opposite to each other in the second direction, wherein the first side, the third side, the second side and the fourth side are connected in sequence; The substrate is provided with a first input port and a second input port, the first input port is located on the first side and is used to input a radio frequency signal of the first frequency band; the second input port is located on the third side and is used to input a radio frequency signal of the second frequency band; The RF front-end module further includes a first power amplifier chip and a second power amplifier chip disposed on the substrate, wherein the first power amplifier chip is connected between the first input port and the first filter, and the first power amplifier chip is disposed adjacent to the first input port and on a side of the first filter close to the third side. The second power amplifier chip is connected between the second input port and the second filter; the second power amplifier chip is arranged adjacent to the second input port and on a side of the second filter close to the third side; the first power amplifier chip and the second power amplifier chip are arranged at intervals along the first direction.

18. The radio frequency front-end module according to claim 17, wherein: The first power amplifier chip and the first filter are arranged in sequence along the second direction; the second power amplifier chip, the second filter and the radio frequency switch are arranged in sequence along the second direction; The radio frequency switch is located on a side of the first filter facing the second side; the radio frequency switch is located on a side of the second filter facing the fourth side.

19. A radio frequency front-end module, characterized in that: The invention comprises a substrate and a first filter, a second filter, a first functional module and a radio frequency switch arranged on the substrate; the first filter, the first functional module and the radio frequency switch are arranged in sequence along a first direction, the second filter and the radio frequency switch are arranged in sequence along a second direction, and the first direction and the second direction intersect; The RF switch is provided with a first port, a second port and an antenna port, and the RF switch is used to connect or disconnect a signal branch between the first port and the antenna port and a signal branch between the second port and the antenna port; The first filter is connected to the first port through the first functional module, and the first filter is used to filter radio frequency signals in a first frequency band; the second filter is connected to the second port, and the second filter is used to filter radio frequency signals in a second frequency band, and the second frequency band and the first frequency band at least partially do not overlap; The first functional module is used to suppress radio frequency signals with a resonant frequency within the second frequency band.

20. A radio frequency front-end module, characterized in that: The invention comprises a substrate and a first power amplifier chip, a second power amplifier chip, a first filter, a second filter, and a radio frequency switch arranged on the substrate; the substrate has a first side and a second side opposite to each other in a first direction, and has a third side and a fourth side opposite to each other in a second direction, the first side, the third side, the second side, and the fourth side are connected in sequence, and the first direction and the second direction intersect; The substrate is provided with a first input port and a second input port, the first input port being located on the first side and being used to input a radio frequency signal of a first frequency band; the second input port being located on the third side and being used to input a radio frequency signal of a second frequency band; the first frequency band and the second frequency band at least partially do not overlap; The radio frequency signal of the first frequency band is transmitted to the radio frequency switch through the first power amplifier chip and the first filter in sequence; the radio frequency signal of the second frequency band is transmitted to the radio frequency switch through the second power amplifier chip and the second filter in sequence; The first power amplifier chip and the first filter are sequentially arranged along the second direction, and the first power amplifier chip is located on a side of the first filter close to the third side and is adjacent to the first input port; The second power amplifier chip, the second filter and the radio frequency switch are arranged in sequence along the second direction. The second power amplifier chip is located on a side of the second filter close to the third side and is arranged adjacent to the second input port.

21. The radio frequency front-end module according to claim 20, characterized in that: The first power amplifier chip and the second power amplifier chip are spaced apart along the first direction; The first filter and the radio frequency switch are spaced apart along the first direction.

22. The radio frequency front-end module according to claim 20, wherein: The RF front-end module further includes a first functional module and a second functional module provided on the substrate; The first functional module is connected between the first filter and the radio frequency switch; the first filter, the first functional module and the radio frequency switch are arranged in sequence along the first direction, and the radio frequency switch is located on a side of the first filter away from the first side; The second functional module is connected between the second filter and the RF switch; the second power amplifier chip, the second filter, the second functional module and the RF switch are arranged in sequence along the second direction, and the RF switch is located on the side of the second power amplifier chip away from the third side.

23. The radio frequency front-end module according to claim 22, wherein: The first functional module includes a first inductor and a capacitor, the first inductor is connected between the first filter and the RF switch; the capacitor and the first inductor are connected in parallel to form a parallel resonance, and the resonant frequency of the parallel resonance is within the second frequency band.

24. The radio frequency front-end module according to claim 23, wherein: The first functional module further includes a second inductor, one end of the second inductor is connected to a common end of the first filter and the first inductor, and the other end of the second inductor is grounded.

25. The radio frequency front-end module according to claim 22, wherein: The second functional module includes a third inductor and a fourth inductor, and the fourth inductor is connected between the second filter and the radio frequency switch; One end of the third inductor is connected to a common end of the fourth inductor and the second filter, and the other end of the third inductor is grounded.

26. The radio frequency front-end module according to any one of claims 20 to 25, characterized in that: The first frequency band is the B3 frequency band; The second frequency band is the B40 frequency band or the B41 frequency band.

27. A radio frequency front-end circuit, characterized in that: It includes a first power amplifier, a second power amplifier, a first filter, a second filter, a first functional module, a second functional module and a radio frequency switch; The RF switch is provided with a first end, a second end and an antenna end, and is used to connect or disconnect a signal branch between the first end and the antenna end and a signal branch between the second end and the antenna end; The first power amplifier, the first filter, the first functional module, and the first end of the radio frequency switch are sequentially connected to form a first transmission path, where the first transmission path is used to transmit radio frequency signals in a first frequency band; The second power amplifier, the second filter, the second functional module, and the second end of the radio frequency switch are sequentially connected to form a second transmission path, where the second transmission path is used to transmit radio frequency signals in a second frequency band, where the second frequency band and the first frequency band at least partially do not overlap; The first functional module includes a first inductor and a capacitor, the first inductor is connected between the first filter and the first end; the capacitor and the first inductor are connected in parallel to form a parallel resonance, and the resonant frequency of the parallel resonance is within the second frequency band.

28. The radio frequency front-end circuit according to claim 27, characterized in that: The first functional module further includes a second inductor, one end of the second inductor is connected to a common end of the first filter and the first inductor, and the other end of the second inductor is grounded.

29. The radio frequency front-end circuit according to claim 27, wherein: The second functional module includes a third inductor and a fourth inductor, and the fourth inductor is connected between the second filter and the second end; One end of the third inductor is connected to a common end of the fourth inductor and the second filter, and the other end of the third inductor is grounded.

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