Monocrystalline silicon wafer resistant to high-frequency vibration

Abstract

The utility model discloses a monocrystalline silicon wafer resistant to high-frequency vibration, which relates to the technical field of monocrystalline silicon wafers and comprises a silicon wafer, and a mounting frame is arranged on the outer side of the silicon wafer. Horizontal vibration reduction assemblies are evenly arranged on the periphery of the mounting frame. Vertical vibration reduction assemblies are arranged on the horizontal vibration reduction assemblies; when the sliding block is used, transverse vibration impact can drive the sleeve to horizontally shake relative to the connecting rod, then the impact is counteracted through deformation of the first damping spring, meanwhile, a first anti-skid ring and a second anti-skid ring can hinder shaking, then horizontal vibration is gradually weakened, in addition, vertical vibration impact drives the sliding block to vertically shake on the sliding rail, and the sliding block is prevented from falling off. The shock can be counteracted through the deformation of the upper and lower damping springs II, and the anti-skid pad can hinder the shaking, so that the vibration shock on the silicon wafer in the shaking process is effectively weakened, and the service life is prolonged.

Description

Technical Field

[0001] The utility model relates to the technical field of single crystal silicon slices, in particular to a single crystal silicon slice resistant to high-frequency vibration. Background Art

[0002] Single crystal silicon wafers are single crystals of silicon. They are a type of crystal with a basically complete lattice structure. They have different properties in different directions and are a good semiconductor material used to manufacture semiconductor devices, solar cells, etc. They are made by drawing high-purity polycrystalline silicon in a single crystal furnace.

[0003] In actual use, single-crystal silicon wafers are often close to devices that emit high-frequency vibrations, such as motors and fans. These high-frequency vibration devices will transmit the generated high-frequency vibrations to the single-crystal silicon wafers. However, existing single-crystal silicon wafers often lack a buffer structure to reduce shock. When subjected to high-frequency vibrations, they will produce friction with the hard external shell part. After long-term friction, the single-crystal silicon wafers will cause a large degree of wear, which will affect the use of the single-crystal silicon wafers. In order to better protect the single-crystal silicon wafers, it is necessary to make the existing silicon wafers close to the devices that emit high-frequency vibrations have the function of resisting high-frequency vibrations. To this end, we propose a single-crystal silicon wafer that is resistant to high-frequency vibrations. Utility Model Content

[0004] The purpose of the present utility model is to provide a single crystal silicon wafer resistant to high frequency vibration, so as to solve the problems raised in the above background technology.

[0005] To achieve the above-mentioned object, the present invention provides the following technical solution: a single crystal silicon wafer resistant to high-frequency vibration, comprising: a silicon wafer, wherein a mounting frame is provided on the outer side of the silicon wafer;

[0006] Horizontal vibration reduction components are evenly arranged around the installation frame;

[0007] The horizontal vibration reduction components are each provided with a vertical vibration reduction component;

[0008] The vertical vibration damping assembly is connected to the outer shell assembly.

[0009] As a preferred solution of a single crystal silicon wafer resistant to high-frequency vibration described in the utility model, wherein: the horizontal vibration damping assembly includes a connecting rod connected to the mounting frame, the connecting rod horizontally passes through the sleeve, a damping spring is provided in the sleeve, the damping spring is connected to the connecting rod, and an anti-slip ring is provided on the inner wall of the sleeve, and the anti-slip ring is fitly connected to the outer wall of the connecting rod.

[0010] As a preferred solution for the high-frequency vibration-resistant single-crystal silicon wafer described in the utility model, an annular groove is provided on the side of the connecting rod away from the silicon wafer, and an anti-slip ring 2 is fitted and connected to the inner wall of the annular groove, and the anti-slip ring 2 is arranged in the sleeve.

[0011] As a preferred solution for a single crystal silicon wafer resistant to high-frequency vibration described in the utility model, the vertical vibration reduction assembly includes a slider connected to a sleeve, the slider is vertically slidably connected to a slide rail, an anti-slip pad is vertically provided on the inner wall of the slide rail, the anti-slip pad is fitly connected to the outer side of the slider, and damping springs are provided on both the top and bottom sides of the slider.

[0012] As a preferred solution of the high-frequency vibration-resistant single-crystal silicon wafer described in the utility model, the shell assembly includes shell one and shell two, and mounting blocks are provided on all four sides of the shell one. The shell one is connected to the slide rail and the bottom damping spring two, and the shell two is connected to the top damping spring two.

[0013] As a preferred solution of the high-frequency vibration-resistant single-crystal silicon wafer described in the utility model, the shell one and the shell two are in contact, and connecting blocks are provided around the shell one and the shell two, and bolts are connected between the upper and lower connecting blocks.

[0014] Compared with the prior art, the beneficial effects of the present invention are: the horizontal vibration damping assembly and the vertical vibration damping assembly can provide sufficient buffering for the silicon wafer to avoid high-frequency vibration interference generated by the motor and fan installed near the device, wherein the lateral vibration impact will drive the sleeve to shake horizontally relative to the connecting rod, and then use the deformation of the damping spring 1 to offset the impact. At the same time, the anti-slip ring 1 and the anti-slip ring 2 can hinder the shaking, and then gradually weaken the horizontal vibration. In addition, the vertical vibration impact drives the slider to shake vertically on the slide rail, and the impact can be offset by the deformation of the upper and lower damping springs 2. At the same time, the anti-slip pad can hinder the shaking, so that the vibration impact on the silicon wafer during the shaking process is effectively weakened, thereby improving the service life. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 This is a schematic diagram of the overall structure of a single crystal silicon wafer resistant to high-frequency vibration according to the present invention;

[0016] Figure 2 This is a schematic cross-sectional view of the overall structure of a single crystal silicon wafer resistant to high-frequency vibration according to the present invention;

[0017] Figure 3 This is a schematic structural diagram of the vertical vibration reduction assembly of a single crystal silicon wafer resistant to high-frequency vibrations according to the present invention.

[0018] In the figure: 1. Silicon wafer; 2. Mounting frame; 3. Connecting rod; 4. Sleeve; 5. Damping spring 1; 6. Anti-slip ring 1; 7. Annular groove; 8. Anti-slip ring 2; 9. Slider; 10. Slide rail; 11. Damping spring 2; 12. Anti-slip pad; 13. Housing 1; 14. Mounting block; 15. Housing 2; 16. Connecting block; 17. Bolt. DETAILED DESCRIPTION

[0019] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0020] As mentioned in the background art, in order to solve the problem that the prior art lacks a buffer structure for shock absorption, the present invention provides a single crystal silicon wafer that is resistant to high-frequency vibration.

[0021] Example 1

[0022] Reference Figures 1 to 3 A single crystal silicon wafer resistant to high frequency vibration comprises a silicon wafer 1, and a mounting frame 2 is provided on the outer side of the silicon wafer 1;

[0023] Horizontal vibration reduction components are evenly arranged around the mounting frame 2;

[0024] Vertical vibration reduction components are provided on the horizontal vibration reduction components;

[0025] The vertical vibration damping assembly is connected to the housing assembly.

[0026] The horizontal vibration reduction assembly includes a connecting rod 3 connected to the mounting frame 2. The connecting rod 3 passes through the sleeve 4 horizontally. A damping spring 5 is provided in the sleeve 4. The damping spring 5 is connected to the connecting rod 3, and an anti-slip ring 6 is provided on the inner wall of the sleeve 4. The anti-slip ring 6 is fitly connected to the outer wall of the connecting rod 3. The lateral vibration impact will drive the sleeve 4 to shake horizontally relative to the connecting rod 3, and then the deformation of the damping spring 5 is used to offset the impact. At the same time, the anti-slip ring 6 can hinder the shaking through friction, thereby gradually weakening the horizontal vibration.

[0027] An annular groove 7 is provided on the side of the connecting rod 3 away from the silicon wafer 1, and an anti-slip ring 2 8 is fitted and connected to the inner wall of the annular groove 7. The anti-slip ring 2 8 is arranged in the sleeve 4. When the sleeve 4 shakes relative to the connecting rod 3, the anti-slip ring 2 8 also shakes in the annular groove 7, thereby further hindering the shaking and improving the vibration reduction effect.

[0028] The vertical vibration reduction assembly includes a slider 9 connected to the sleeve 4. The slider 9 is vertically slidably connected to the slide rail 10. An anti-slip pad 12 is vertically provided on the inner wall of the slide rail 10. The anti-slip pad 12 is fitly connected to the outer side of the slider 9. Damping springs 11 are provided on both the top and bottom sides of the slider 9. The vertical vibration impact drives the slider 9 to shake vertically on the slide rail 10, and the impact can be offset by the deformation of the upper and lower damping springs 11. At the same time, the anti-slip pad 12 can hinder the shaking and weaken the vertical vibration.

[0029] The shell assembly includes shell 13 and shell 2 15. Mounting blocks 14 are provided around shell 13 for fixing shell 13 where needed. Shell 13 is connected to the slide rail 10 and the bottom damping spring 2 11. Shell 2 15 is connected to the top damping spring 2 11. After installing the slide rail 10 and the bottom damping spring 2 11 on shell 1 13 and then installing shell 2 15, the top damping spring 2 11 can be connected to shell 2 15, which is convenient for installation.

[0030] Example 2

[0031] Reference Figures 1 to 2 , shell one 13 and shell two 15 are in contact, and connecting blocks 16 are provided around shell one 13 and shell two 15, and bolts 17 are connected between the upper and lower connecting blocks 16, so that shell one 13 and shell two 15 can be fixed by bolts 17.

[0032] The rest of the structure is the same as that of Example 1.

[0033] Although the embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and variations may be made to these embodiments without departing from the principles and spirit of the present invention, and the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A single crystal silicon wafer resistant to high-frequency vibration, characterized by: include, A silicon wafer (1), wherein a mounting frame (2) is provided on the outer side of the silicon wafer (1); Horizontal vibration reduction components are evenly arranged around the four sides of the installation frame (2); The horizontal vibration reduction components are each provided with a vertical vibration reduction component; The vertical vibration damping assembly is connected to the outer shell assembly.

2. The high-frequency vibration-resistant single-crystal silicon wafer according to claim 1, wherein: The horizontal vibration damping assembly includes a connecting rod (3) connected to the mounting frame (2), the connecting rod (3) horizontally passing through a sleeve (4), a damping spring (5) is provided in the sleeve (4), the damping spring (5) is connected to the connecting rod (3), and an anti-slip ring (6) is provided on the inner wall of the sleeve (4), and the anti-slip ring (6) is in close contact with the outer wall of the connecting rod (3).

3. The high-frequency vibration-resistant single crystal silicon wafer according to claim 2, wherein: An annular groove (7) is provided on the side of the connecting rod (3) away from the silicon wafer (1), and a second anti-slip ring (8) is fitted and connected to the inner wall of the annular groove (7), and the second anti-slip ring (8) is arranged in the sleeve (4).

4. The high-frequency vibration-resistant single crystal silicon wafer according to claim 2, wherein: The vertical vibration reduction assembly includes a slider (9) connected to a sleeve (4), the slider (9) is vertically slidably connected to a slide rail (10), an anti-slip pad (12) is vertically arranged on the inner wall of the slide rail (10), the anti-slip pad (12) is closely connected to the outer side of the slider (9), and damping springs (11) are arranged on both the top and bottom sides of the slider (9).

5. The high-frequency vibration-resistant single crystal silicon wafer according to claim 4, characterized in that: The housing assembly includes a housing 1 (13) and a housing 2 (15). The housing 1 (13) is provided with mounting blocks (14) on all four sides. The housing 1 (13) is connected to the slide rail (10) and the bottom damping spring 2 (11), and the housing 2 (15) is connected to the top damping spring 2 (11).

6. The high-frequency vibration-resistant single crystal silicon wafer according to claim 5, characterized in that: The shell 1 (13) and the shell 2 (15) are in contact with each other, and connecting blocks (16) are provided around the shell 1 (13) and the shell 2 (15), and bolts (17) are connected between the upper and lower connecting blocks (16).

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