Bearing structure

Abstract

The utility model provides a bearing structure, relates to the technical field of semiconductors, and aims to solve the problem of film stripping of a silicon wafer caused by stress concentration after the suction force of an electrostatic chuck is removed. The bearing structure comprises a bearing main body and a plurality of salient point structures. The bearing main body comprises a first surface, the plurality of salient point structures are arranged on the first surface and connected with the first surface, and the plurality of salient point structures are used for bearing silicon wafers. The heights of the multiple salient point structures are gradually changed in the direction from the center of the first surface to the boundary. The heights of the salient point structures of the bearing structure gradually change along the direction from the center of the first surface to the boundary, so that the initial shape of the silicon wafer can be better matched. Forced deformation required by flattening of the silicon wafer is reduced, so that internal stress released when the silicon wafer recovers deformation after the adsorption force is removed is remarkably reduced, internal stress concentration between the film layers and between the film layers and the silicon wafer is effectively reduced, and stripping of the film layers due to overlarge internal stress is avoided.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a supporting structure. Background Art

[0002] An electrostatic chuck is a high-purity wafer support device designed specifically for vacuum and plasma environments. It uses electrostatic adsorption to provide stable and uniform support for the wafer, ensuring it remains flat during specific processing steps.

[0003] The basic structure of the electrostatic chuck includes the bumps on the chuck surface. The deformation of the silicon wafer caused by the previous process will be sucked flat by the electrostatic chuck. When the suction is removed, the deformation of the silicon wafer will recover, causing the film layer structure grown on the silicon wafer to peel off from the silicon wafer due to the large internal stress. Therefore, the yield of the prepared product is low. Utility Model Content

[0004] The embodiments of the present application provide a bearing structure, which aims to improve the problem of film peeling caused by stress concentration after the suction of the electrostatic chuck is released.

[0005] The embodiments of this application adopt the following technical solutions:

[0006] The present application provides a support structure, comprising a support body and a plurality of bump structures. The support body comprises a first surface, and a plurality of bump structures are disposed on the first surface, the plurality of bump structures being used to support a silicon wafer. The plurality of bump structures gradually vary in height along a direction from the center of the first surface toward a boundary, where the bump structure height is the dimension of the bump structure in a direction perpendicular to the first surface.

[0007] The height of the convex structure of the supporting structure provided in the present application gradually changes in the direction from the center of the first surface to the boundary, which can better match the initial shape of the silicon wafer (that is, the shape after deformation by the previous process). In the process of flattening the silicon wafer by electrostatic adsorption, the forced deformation required for the silicon wafer to be flattened is reduced. Therefore, after the adsorption force is withdrawn, the internal stress released when the silicon wafer recovers the deformation is significantly reduced, effectively reducing the internal stress concentration between the film layers and between the film layer and the silicon wafer, and avoiding the film layer from peeling off due to excessive internal stress. In addition, the convex structure with height variation reduces the relative displacement of the silicon wafer during the flattening and recovery process, thereby reducing the friction loss of the convex structure, significantly improving the durability of the convex structure, and extending the service life of the supporting structure.

[0008] As a possible implementation manner, the heights of the plurality of bump structures increase gradually along a direction from the center of the first surface to the boundary.

[0009] As a possible implementation manner, the heights of the plurality of bump structures decrease gradually along a direction from the center of the first surface to the boundary.

[0010] As a possible implementation manner, along the direction from the center to the boundary of the first surface, the height difference between every two adjacent bump structures is a constant value.

[0011] As one possible implementation, the plurality of bump structures include a central bump structure located at a center position of the first surface. The remaining bump structures other than the central bump structure are divided into multiple groups of bump structures, each group of bump structures including multiple bump structures surrounding the central bump structure. The multiple bump structures included in each group of bump structures have the same height.

[0012] As a possible implementation, within each of two adjacent groups of bump structures, the height of the bump structures in the group of bump structures relatively close to the central bump structure is greater than the height of the bump structures in the group of bump structures relatively far from the central bump structure, and the height of the central bump structure is greater than the heights of the plurality of bump structures in the adjacent group of bump structures. Alternatively, within each of two adjacent groups of bump structures, the height of the bump structures in the group of bump structures relatively close to the central bump structure is less than the height of the bump structures in the group of bump structures relatively far from the central bump structure, and the height of the central bump structure is less than the heights of the plurality of bump structures in the adjacent group of bump structures.

[0013] As a possible implementation, the multiple bump structures include a central bump structure located at the center of the first surface and an edge bump structure located at the boundary of the first surface, and the height difference between the central bump structure and the edge bump structure ranges from 1.5μm to 5.0μm.

[0014] As a possible implementation manner, the height of the lowest bump structure among the plurality of bump structures ranges from 2.0 μm to 5.0 μm.

[0015] As a possible implementation, the height of the edge bump structure ranges from 3.5 μm to 10 μm.

[0016] As a possible implementation, the carrier body further includes a second surface opposite to the first surface, and a back-blowing air path is provided inside the carrier body, communicating from the second surface to the first surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] To more clearly illustrate the technical solutions of this application, the following briefly introduces the drawings required for use in some embodiments of this application. Obviously, the drawings described below are only drawings of some embodiments of this application, and those skilled in the art can also derive other drawings based on these drawings. Furthermore, the drawings described below are schematic diagrams and are not intended to limit the actual dimensions of the products, actual processes of the methods, actual timing of signals, and the like involved in the embodiments of this application.

[0018] Figure 1 A side view of an electrostatic chuck provided for some embodiments of the present application;

[0019] Figure 2 A top view of an electrostatic chuck provided for some embodiments of the present application;

[0020] Figure 3 A schematic diagram of a silicon wafer provided for some embodiments of the present application;

[0021] Figure 4 A schematic diagram of another silicon wafer provided for some embodiments of the present application;

[0022] Figure 5 A schematic diagram of peeling of a film layer from a silicon wafer provided in some embodiments of the present application;

[0023] Figure 6 A schematic diagram of a bearing structure provided for some embodiments of the present application;

[0024] Figure 7 A schematic diagram of another supporting structure provided for some embodiments of the present application;

[0025] Figure 8 A schematic diagram of a first surface provided for some embodiments of the present application;

[0026] Figure 9 A schematic diagram of another supporting structure provided for some embodiments of the present application;

[0027] Figure 10 A schematic diagram of product yield comparison provided for some embodiments of the present application. DETAILED DESCRIPTION

[0028] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments provided in this application, all other embodiments obtained by ordinary technicians in this field are within the scope of protection of this application.

[0029] In the description of this application, it should be understood that, unless the context requires otherwise, throughout the specification and claims, the term "including" is to be interpreted as open and inclusive, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "exemplarily" or "some examples" are intended to indicate that the specific features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present application. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0030] In the following, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

[0031] An electrostatic chuck is a high-purity wafer support device designed specifically for vacuum and plasma environments. It uses electrostatic adsorption to provide stable and uniform support for the wafer, ensuring it remains flat during specific processing steps.

[0032] Electrostatic chucks are widely used in physical vapor deposition (PVD) and etching processes in semiconductor manufacturing. The basic components of an electrostatic chuck include a carrier and a bump structure located on the carrier.

[0033] For example, Figure 1 and Figure 2 As shown, Figure 1 A side view of an electrostatic chuck provided for some embodiments of the present application, Figure 2 A top view of an electrostatic chuck provided for some embodiments of the present application. Figure 1 and Figure 2 It can be seen that a large number of bump structures 2 are provided on the carrier body 1 , and the multiple bump structures support the silicon wafer 3 .

[0034] In the actual production process of the wafer, the silicon wafer will go through other processes before being placed on the electrostatic chuck. The silicon wafer will often be deformed after the front-end process, for example, Figure 3 As shown. Figure 3It can be seen that after the front-end process (such as cutting and polishing), the silicon wafer has a convex shape. When the silicon wafer is placed on the electrostatic chuck, the electrostatic chuck will be powered on, causing the surface of the electrostatic chuck to generate charges. Under the interaction between the charges on the surface of the electrostatic chuck and the charges on the surface of the silicon wafer, the generated adsorption force firmly adsorbs the silicon wafer on the bump structure. The scene of the silicon wafer being adsorbed on the bump structure is shown in the figure. Figure 1 shown.

[0035] For example, Figure 4 As shown, after the silicon wafer 3 is firmly adsorbed on the bump structure 2 , deposition is usually performed on the silicon wafer 3 to form different film layer structures. Figure 4 The first film layer 31 and the second film layer 32 are sequentially grown on the upper surface of the silicon wafer 3. The first film layer 31 is arranged on the side of the silicon wafer 3 away from the bump structure 2, and the second film layer 32 is arranged on the side of the first film layer 31 away from the silicon wafer 3.

[0036] Since the silicon wafer 3 originally has a certain deformation, it is forced to be flattened under the action of the adsorption force of the electrostatic chuck, and the first film layer 31 and the second film layer 32 are deposited and grown when the silicon wafer 3 is flattened, so when the adsorption force of the electrostatic chuck is removed, the silicon wafer 3 will restore its original deformation due to its elasticity. The process of the silicon wafer 3 recovering its deformation will cause stress between the silicon wafer 3 and the first film layer 31, and between the first film layer 31 and the second film layer 32. In particular, stress concentration is more likely to occur between the silicon wafer 3 and the first film layer 31, and this stress concentration will cause peeling between the film layer and the silicon wafer 3, as shown in the example below. Figure 5 shown.

[0037] Since the film layer on the silicon wafer 3 is usually the key material for forming functional devices in the wafer, once the film layer and the silicon wafer 3 are peeled off, it is very likely to cause the integrated circuit inside the wafer to open circuit, short circuit or cause unstable performance. In the manufacture of optical devices, the peeling of the film layer will affect the transmittance, reflectivity and other properties of the optical layer, resulting in the product failing to meet the design requirements. The peeling of the film layer will destroy the multi-layer structure of the wafer, resulting in a decrease in the overall mechanical strength, and the wafer will be more prone to cracks, fragmentation and other problems in subsequent processing. Therefore, the wafer after the film layer is peeled off usually cannot meet the specification requirements and must be treated as waste, which directly reduces the production yield.

[0038] In view of this, the embodiment of the present application provides a bearing structure, illustratively, as Figure 6As shown. The supporting structure 100 includes a supporting body 1 and multiple bump structures 2. The supporting body 1 includes a first surface 11. The multiple bump structures 2 are arranged on and connected to the first surface 11. The multiple bump structures 2 are used to support a silicon wafer. The height of the multiple bump structures 2 gradually changes along the direction from the center to the edge of the first surface 11, that is, the direction indicated by the arrow in the figure. The height of the bump structure 2 is the dimension of the bump structure 2 in the direction perpendicular to the first surface 11.

[0039] The supporting structure 100 provided in the present application is used to support the silicon wafer 3. The supporting structure 100 is, for example, an electrostatic chuck. The height of the convex structure 2 of the supporting structure 100 gradually changes along the direction of the center of the first surface 11 pointing to the boundary, which can better match the initial shape of the silicon wafer 3 (that is, the shape after the deformation produced by the front process). In the process of electrostatic adsorption flattening the silicon wafer 3, the forced deformation required for the silicon wafer 3 to be flattened is reduced. Therefore, after the adsorption force is withdrawn, the internal stress released when the silicon wafer 3 recovers the deformation is significantly reduced, effectively reducing the internal stress concentration between the film layer and the film layer with the silicon wafer 3, avoiding the film layer from peeling off due to excessive internal stress. In addition, the convex structure 2 with high variation reduces the relative displacement of the silicon wafer 3 during the flattening and recovery process, thereby reducing the friction loss of the convex structure 2, making the durability of the convex structure 2 significantly improved, and extending the service life of the supporting structure.

[0040] In some embodiments, as Figure 6 As shown, along the direction from the center of the first surface 11 to the boundary, the heights of the plurality of bump structures 2 decrease gradually. When the silicon wafer 3 undergoes a convex deformation after the front-end process, Figure 6 The plurality of bump structures 2 shown can accumulate as little stress as possible during the process of flattening the silicon wafer 3 and depositing and growing the film structure.

[0041] The support structure 100 in some of the above-described embodiments is suitable for a silicon wafer 3 that has undergone a convex deformation. The central region of the convexly deformed silicon wafer 3 is curved upward, while the edge region of the convexly deformed silicon wafer 3 is closer to the first surface 11 than the central region. During the adsorption process of the support structure, the central region of the convexly deformed silicon wafer 3 requires greater height compensation than the edge region to fill the overhanging portion of the central region of the convexly deformed silicon wafer 3, thereby ensuring a smooth and even fit of the entire silicon wafer 3.

[0042] When the convexly deformed silicon wafer 3 is attached to the support structure, the lower height of the bump structures 2 in the edge areas of the first surface 11 conforms to the shape of the convexly deformed silicon wafer 3, allowing the edge areas of the silicon wafer 3 to be released from the bump structures 2 earlier without the need for forced downward pressure. The higher height of the bump structures in the center area of ​​the first surface 11 provides additional support.

[0043] By adopting this design in which the height decreases from the center to the edge of the first surface 11, the silicon wafer 3 can naturally fit the bump structure 2 during the adsorption process without requiring excessive deformation adjustment. Since the process of forced flattening of the silicon wafer 3 is reduced, the internal stress of the silicon wafer 3 when it recovers its deformation after the adsorption force is removed is reduced. Since the design in which the height decreases from the center to the edge of the first surface 11 better fits the silicon wafer 3 that has undergone convex deformation, the support for the silicon wafer 3 is more reasonable, which is conducive to evenly distributing the adsorption force and avoiding the risks brought about by stress concentration caused by excessive compression of the edge of the silicon wafer 3 or insufficient support in the center of the silicon wafer 3.

[0044] The silicon wafer 3 and the bump structure 2 are more evenly bonded, which reduces the rebound amplitude of the silicon wafer 3 when the adsorption force is withdrawn. The risk of the film structure peeling off from the silicon wafer 3 due to stress concentration is significantly reduced, thereby ensuring the production yield of the wafer.

[0045] As a possible implementation, Figure 7 As shown, the heights of the multiple bump structures 2 increase gradually from the center of the first surface toward the edge. The bump structures 2 gradually increase in height from the center toward the edge to better accommodate the concavely deformed silicon wafer 3 and reduce the internal stress caused by the concavely deformed silicon wafer 3 during the adsorption process.

[0046] The supporting structure 100 in some of the above embodiments is suitable for a silicon wafer 3 that has undergone a concave deformation. The central area of ​​the silicon wafer 3 that has undergone a concave deformation is closer to the first surface 11 than the edge area. The design of the height of the convex structure 2 gradually increasing from the center to the boundary of the first surface 11 enables the edge area of ​​the silicon wafer 3 to be better supported, while the height of the convex structure 2 in the central area of ​​the first surface is relatively low, thereby avoiding excessive pressure on the center of the silicon wafer 3 due to excessive support, thereby reducing the deformation amplitude of the silicon wafer 3.

[0047] When a concavely deformed silicon wafer 3 is attached, the progressively increasing height of the bump structure 2 provides a more natural support for the wafer 3, minimizing the extent to which the wafer 3 is forced to flatten. This in turn reduces the internal forces generated by the wafer 3 recovering from its deformation after the adsorption force is removed. This results in a more uniform bond between the wafer 3 and the bump structure 2. The more compatible bump structure 2 creates a more uniform internal stress on the wafer 3 after attachment, helping to avoid localized stress concentration and reducing the risk of delamination between the film structure and the wafer 3. This reduced risk of delamination helps improve process reliability and product yield.

[0048] Furthermore, because the concavely deformed silicon wafer 3 adheres more evenly to the bump structures 2, which gradually increase in size from the center to the edge of first surface 11, wear of the bump structures 2 caused by movement of the silicon wafer 3 during the adsorption process is reduced. This improved adhesion between the silicon wafer 3 and the bump structures 2 reduces mechanical impact and friction between the silicon wafer 3 and the support structure, thereby extending the service life of the support structure.

[0049] In some embodiments, along the direction from the center of the first surface to the boundary, the height difference between each two adjacent bump structures is a constant value. Figure 7 For example, the center of first surface 11 is the dividing point between the leftward and rightward arrows. The bump structure 2 corresponding to the center of first surface 11 is designated as center bump structure 21. From the center bump structure to the left, the adjacent bump structures are first bump structure 22, second bump structure 23, third bump structure 24, and so on. The height difference between each two adjacent bump structures 2 is a constant value, meaning that the height difference between first bump structure 22 and center bump structure 21 is equal to the height difference between second bump structure 23 and first bump structure 22. The height difference between second bump structure 23 and first bump structure 22 is equal to the height difference between third bump structure 24 and second bump structure 23.

[0050] The uniform height variation design of the bump structure 2 is intended to achieve more precise support and adsorption of the silicon wafer 3, optimize the stress distribution of the silicon wafer 3 and the deposition effect of the film structure, and at the same time improve the controllability and consistency of the manufacturing and processing of the bump structure 2.

[0051] The fixed height difference between adjacent bump structures 2 results in a linear distribution of bump structure height variations, enabling more precise matching of the deformation of different types of silicon wafers 3, resulting in a more uniform bonding. This linear variation in bump structure height avoids localized under- or over-support due to uneven distribution of bump structures 2, improving bonding while preventing stress on the silicon wafer 3 during bonding from concentrating on a single or limited number of bump structures 2, thereby reducing localized stress concentration.

[0052] Furthermore, since the flatness of the silicon wafer 3 directly affects the thickness uniformity of the deposited film structure, the fixed height difference of the bump structures 2 can improve the consistency of the support for the silicon wafer 3, thereby improving the overall quality of the film structure deposition. In terms of manufacturing technology, the customized height difference between adjacent bump structures 2 makes it easier to achieve high-precision control during the processing and arrangement of the bump structures 2, simplifying the manufacturing process and reducing production costs. Furthermore, the fixed height difference design is universal. By adjusting the initial height parameter, that is, the height of the mid-bump structure, silicon wafers with different curvatures can be used.

[0053] In the above embodiment, "the direction from the center of the first surface to the boundary" is described from the perspective of a cross section on the first surface of the supporting structure. The supporting structure provided by the embodiment of the present application will be described below from the perspective of the entire first surface.

[0054] For example, refer to Figure 8 On the first surface, the plurality of bump structures 2 include a central bump structure 21 located at the center of the first surface. Except for the central bump structure 21, the other bump structures are divided into a plurality of groups of bump structures. Each group of bump structures includes a plurality of bump structures surrounding the central bump structure 21. The heights of the plurality of bump structures 21 included in each group of bump structures 21 are the same. For convenience of explanation, Figure 8 Two groups of bump structures 2 are shown by dotted lines.

[0055] In the direction from the central bump structure 21 to the boundary of the first surface Figure 8 The two groups of bump structures 2 indicated by the dashed lines are respectively referred to as the first bump structure group and the second bump structure group. The first bump structure group includes six bump structures 2, and the second bump structure group includes twelve bump structures 2. The six bump structures 2 in the first bump structure group have the same height, and the twelve bump structures 2 in the second bump structure group have the same height.

[0056] “Along the direction from the center of the first surface to the boundary, the heights of the plurality of bump structures gradually increase or decrease” Figure 8 That is, from the perspective of , in each of two adjacent groups of bump structures 2, the height of the bump structures 2 in the group of bump structures 2 relatively close to the central bump structure 21 is less than the height of the bump structures 2 in the group of bump structures 2 relatively far from the central bump structure 21, and the height of the central bump structure 21 is less than the heights of the plurality of bump structures 2 in the adjacent group of bump structures 2. In each of two adjacent groups of bump structures 2, the height of the bump structures 2 in the group of bump structures 2 relatively close to the central bump structure 21 is greater than the height of the bump structures 2 in the group of bump structures 2 relatively far from the central bump structure 21, and the height of the central bump structure 21 is greater than the heights of the plurality of bump structures 2 in the adjacent group of bump structures 2.

[0057] Exemplarily, the first bump structure group is closer to the central bump structure 21 than the second bump structure group. When the silicon wafer is concavely deformed, the bump structure 2 in the first bump structure group is smaller than the bump structure 2 in the second bump structure group. Figure 8 The first surface shown is a cross section obtained by passing through the central bump structure 21 . Looking from the central bump structure 21 toward the boundary of the first surface, the heights of the plurality of bump structures 2 gradually increase starting from the central bump structure 21 .

[0058] When the silicon wafer is deformed upward, the bump structure 2 in the first bump structure group is larger than the bump structure 2 in the second bump structure group. Figure 8 The first surface shown is a cross section obtained by passing through the central bump structure 21 . Looking from the central bump structure 21 toward the boundary of the first surface, the heights of the plurality of bump structures 2 gradually decrease starting from the central bump structure 21 .

[0059] As a possible implementation, for example, Figure 6 As shown, the plurality of bump structures include a central bump structure 21 located at the center of the first surface 11 and an edge bump structure 25 located at the boundary of the first surface 11 , and the height difference between the central bump structure 21 and the edge bump structure 25 ranges from 1.5 μm to 5.0 μm.

[0060] As a possible implementation, the height of the lowest bump structure among the plurality of bump structures ranges from 2.0 μm to 5.0 μm. Figure 6 Taking the supporting structure shown in FIG as an example, the lowest bump structure among the plurality of bump structures 2 is the edge bump structure 25 , and the height of the edge bump structure 25 is in the range of 2.0 μm-5.0 μm, for example, 2.5 μm.

[0061] As a possible implementation method, the height of the edge bump structure ranges from 3.5μm to 10μm. Figure 6 For example, the height of the edge bump structure 25 is in the range of 3.5 μm-10 μm, for example, 4 μm.

[0062] In some embodiments, the bump structure includes at least one of insulating materials such as titanium nitride or ceramics, and the bump structure can be manufactured using PVD, screen printing, coating, and the like.

[0063] For example, Figure 9 As shown, the carrier body also includes a second surface 13 opposite the first surface 11. A back-blowing air path 12 is provided within the carrier body, connecting the second surface 13 to the first surface 11. Back-blowing air path 12 blows air between the silicon wafer 3 and the first surface 11, forming a stable air cushion support, reducing friction between the silicon wafer 3 and the bump structure 2, and protecting the integrity of the silicon wafer 3. For slightly deformed silicon wafers 3, the back-blowing airflow can provide local support by adjusting the pressure, further improving the bonding effect.

[0064] In addition, the supporting structure needs to precisely heat or cool the silicon wafer 3. The back-blowing gas can form a uniform airflow between the silicon wafer 3 and the first surface 11, improving the efficiency of heat conduction. Furthermore, the uniform temperature distribution can avoid thermal stress caused by local overheating or overcooling, reducing defects in the film structure caused by temperature differences during the deposition process, such as warping or cracking. The back-blowing gas flows on the back of the silicon wafer 3, removing tiny particles or residues from the surface of the silicon wafer 3, reducing the risk of contamination during the deposition of the film structure.

[0065] The use of the bearing structure provided in the embodiments of the present application can greatly improve the product yield. For example, Figure 10 When using the support structure provided in this application to produce dense, high-stress PVD tantalum oxide thin films, the height difference of the silicon wafer after the front-end process is placed on the support structure is 50μm-150μm. In this application, the height of the edge bump structure is designed to be between 3.5μm-10μm, and the height of the center bump structure is between 2.0μm-3.0μm. The support structure provided in this application can reduce the product yield by 3%-10%. Figure 10 After improvement means that the bearing structure provided by the present application is used, and before improvement means that the bearing structure provided by the present application is not used. Figure 10 The defects and bad areas are indicated by black filling, and it can be seen that the defective rate is significantly reduced after improvement.

[0066] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in the present invention should be included in the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be based on the scope of protection of the claims.

Claims

1. A bearing structure, characterized in that: The bearing structure comprises: a carrying body, the carrying body comprising a first surface; A plurality of bump structures are provided on the first surface, and the plurality of bump structures are used to support a silicon wafer; Wherein, along the direction from the center of the first surface to the boundary, the heights of the plurality of convex structures gradually change, and the heights of the convex structures are the dimensions of the convex structures in the direction perpendicular to the first surface.

2. The bearing structure according to claim 1, characterized in that: Along the direction from the center to the boundary of the first surface, the heights of the plurality of bump structures increase gradually.

3. The bearing structure according to claim 1, characterized in that: Along the direction from the center to the boundary of the first surface, the heights of the plurality of bump structures decrease.

4. The bearing structure according to any one of claims 1 to 3, characterized in that: Along the direction from the center to the boundary of the first surface, the height difference between every two adjacent bump structures is a constant value.

5. The bearing structure according to any one of claims 1 to 3, characterized in that: The plurality of convex structures include a central convex structure located at a central position of the first surface, and the other convex structures except the central convex structure are divided into a plurality of groups of convex structures, each group of convex structures includes a plurality of convex structures surrounding the central convex structure; The heights of the multiple bump structures included in each group of bump structures are the same.

6. The bearing structure according to claim 5, characterized in that: In each of two adjacent groups of bump structures, the height of the bump structures in the group of bump structures relatively close to the central bump structure is greater than the height of the bump structures in the group of bump structures relatively far from the central bump structure, and the height of the central bump structure is greater than the heights of multiple bump structures in the group of bump structures adjacent thereto; Alternatively, in each two adjacent groups of bump structures, the height of the bump structures in a group of bump structures relatively close to the central bump structure is smaller than the height of the bump structures in a group of bump structures relatively far away from the central bump structure, and the height of the central bump structure is smaller than the heights of multiple bump structures in a group of bump structures adjacent to it.

7. The bearing structure according to any one of claims 1 to 3, characterized in that: The plurality of bump structures include a central bump structure located at a center position of the first surface and an edge bump structure located at a boundary position of the first surface. A height difference between the central bump structure and the edge bump structure ranges from 1.5 μm to 5.0 μm.

8. The bearing structure according to claim 7, characterized in that: The height of the lowest bump structure among the plurality of bump structures ranges from 2.0 μm to 5.0 μm.

9. The bearing structure according to claim 7, characterized in that: The height of the edge bump structure ranges from 3.5 μm to 10 μm.

10. The bearing structure according to any one of claims 1 to 3, characterized in that: The carrier body further includes a second surface opposite to the first surface. A back-blowing air path is provided inside the carrier body, communicating from the second surface to the first surface.

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