Packaging structure with silicon dioxide light guide wire

Abstract

The utility model relates to a packaging structure with a silicon dioxide light guide wire. The packaging structure comprises a substrate, at least one chip, at least one silicon dioxide light guide wire and a packaging part. Wherein the at least one chip is arranged on the substrate, the at least one chip is provided with at least one signal contact piece, and the at least one signal contact piece is connected through the silicon dioxide light guide wire, so that an optical signal of the at least one chip is conducted and transmitted; the packaging part surrounds the substrate, the at least one chip and the at least one silicon dioxide light guide wire, at least one connecting piece is arranged on the outer side of the packaging part, and the at least one signal contact piece is connected with the at least one connecting piece through the silicon dioxide light guide wire. Therefore, the optical signal of the at least one chip at the inner side of the packaging part is output and input to the outer side of the packaging part.

Description

Technical Field

[0001] The utility model relates to a packaging structure, in particular to a packaging structure with silicon dioxide light guides and a manufacturing process thereof. Background Art

[0002] In the prior art, an integrated circuit chip is provided with contacts, and metal wires are used to connect the contacts to conduct current and voltage signals of the integrated circuit chip.

[0003] In the prior art, an integrated circuit chip is provided with optical signal contacts, and an optical fiber is connected to the contacts to conduct the optical signal of the integrated circuit chip. Utility Model Content

[0004] The utility model is a packaging structure with silica light guides, which includes: a substrate; at least one chip, the at least one chip is arranged on the substrate, and the at least one chip is provided with at least one signal contact component; at least one silica light guide, the at least one signal contact component is connected via the silica light guide, thereby conducting and transmitting the optical signal of the at least one chip; and a packaging part, the packaging part surrounds the substrate, the at least one chip, and the at least one silica light guide, wherein at least one connecting component is provided on the outside of the packaging part, wherein the at least one signal contact component is connected to the at least one connecting component via the silica light guide, thereby outputting and inputting the optical signal of the at least one chip inside the packaging part to the outside of the packaging part.

[0005] The utility model is a packaging structure with a silicon dioxide light guide. The at least one silicon dioxide light guide is formed by atomic layer deposition (ALD) of silicon dioxide (SiO2). A silicon dioxide (SiO2) layer is formed on the substrate. Atomic layer etching (ALE) is then performed to form the at least one separated silicon dioxide light guide. The atomic layer deposition (ALD) of the at least one silicon dioxide light guide is performed at an environment of 75 to 85 degrees Celsius to form the silicon dioxide (SiO2) layer on the substrate.

[0006] The utility model discloses a packaging structure having a silicon dioxide light guide. The at least one silicon dioxide light guide is subjected to hydrogen (H2) rapid thermal processing (RTP) to be strengthened and reduced to form a transparent quartz glass structure, thereby conducting and transmitting an optical signal of the at least one silicon dioxide light guide. The rapid thermal processing (RTP) has an initial temperature of 0 to 25 degrees Celsius, a peak holding temperature of 1000 to 1100 degrees Celsius, and an ending temperature of 0 to 25 degrees Celsius. The time required to operate from the initial temperature to the peak holding temperature is 0.4 to 0.6 seconds, the peak holding temperature is then maintained for 2 to 3 seconds, and finally, the time required to operate from the peak holding temperature to the ending temperature is 0.4 to 0.6 seconds.

[0007] The utility model is a packaging structure with a silicon dioxide light guide, wherein the at least one silicon dioxide light guide is formed by chemical vapor deposition (CVD) of silicon dioxide (SiO2) to form a silicon dioxide (SiO2) layer on the substrate, and through masking and etching, the at least one silicon dioxide light guide is separated.

[0008] The utility model is a packaging structure with silicon dioxide light guides, wherein the silicon dioxide (SiO2) layer is selected from at least one structure of polycrystalline and single crystal.

[0009] The utility model is a packaging structure with silicon dioxide light guides, wherein the at least one silicon dioxide light guide is formed by physical vapor deposition (PVD) of silicon dioxide (SiO2) by sputtering (sputter deposition / coating) to form a silicon dioxide (SiO2) layer on the substrate, and through masking (masking) and etching (etching), the at least one silicon dioxide light guide is separated.

[0010] The present invention discloses a process for manufacturing a packaging structure having a silicon dioxide light guide, wherein the steps include: using a precursor to generate silicon dioxide (SiO2) via SiH4+2O2->SiO2+2H2O, using silane (SiH4, silane) to form a silicon dioxide (SiO2) layer on the substrate by atomic layer deposition (ALD) of the silicon dioxide (SiO2); using the silicon dioxide (SiO2) layer to form at least one separated silicon dioxide light guide by atomic layer etching (ALE); using hydrogen (H2) to perform rapid thermal treatment (RT-HT) on the at least one silicon dioxide light guide. The invention relates to a method for manufacturing a silicon dioxide light-guiding optical fiber. The method comprises the following steps: performing a heat treatment process (RTP) on the at least one silicon dioxide light-guiding optical fiber, strengthening and reducing the at least one silicon dioxide light-guiding optical fiber to form a transparent quartz glass structure, thereby conducting and transmitting the optical signal of the at least one silicon dioxide light-guiding optical fiber; using at least one chip disposed on the substrate, wherein the at least one chip is provided with at least one signal contact component; using at least one signal contact component to connect the at least one silicon dioxide light-guiding optical fiber to the corresponding at least one silicon dioxide light-guiding optical fiber, thereby conducting and transmitting the optical signal of the at least one chip; using at least one connector disposed on the outside of the packaging portion, connecting the at least one signal contact component to the at least one connector via the silicon dioxide light-guiding optical fiber, thereby outputting and inputting the optical signal of the at least one chip inside the packaging portion to the outside of the packaging portion; and using a packaging portion to surround the substrate, the at least one chip, and the at least one silicon dioxide light-guiding optical fiber.

[0011] The utility model is a process for manufacturing a packaging structure with a silicon dioxide light guide, wherein the steps include: using atomic layer deposition (ALD) of silicon dioxide (SiO2) to form a silicon dioxide (SiO2) layer on the substrate at an environment of 75 to 85 degrees Celsius.

[0012] The utility model discloses a process for manufacturing a packaging structure having a silicon dioxide light-guiding wire, wherein the rapid thermal processing (RTP) step includes: using hydrogen (H2) to perform rapid thermal processing (RTP) on at least one silicon dioxide light-guiding wire, wherein the starting temperature is 0 to 25 degrees Celsius, through a peak holding temperature of 1000 to 1100 degrees Celsius, to an ending temperature of 0 to 25 degrees Celsius, wherein the time required for operating from the starting temperature to the peak holding temperature is 0.4 to 0.6 seconds, then the peak holding temperature is maintained for 2 to 3 seconds, and finally the time required for operating from the peak holding temperature to the ending temperature is 0.4 to 0.6 seconds.

[0013] The utility model relates to a process for manufacturing a packaging structure having a silicon dioxide light guide wire and the process thereof. The process comprises forming at least one silicon dioxide light guide wire of a silicon dioxide (SiO2) layer on a substrate in a low temperature environment of 75 to 85 degrees Celsius. The low temperature can achieve the effect of reducing damage to the chip in the package.

[0014] The present invention uses hydrogen (H2) to perform rapid thermal processing (RTP) on at least one silicon dioxide light guide, thereby strengthening and reducing the at least one silicon dioxide light guide to form a transparent quartz glass structure, thereby achieving the effect of conducting and transmitting the optical signal of the at least one silicon dioxide light guide. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 This is a schematic side view of the packaging structure of the utility model with silicon dioxide light guides.

[0016] Figure 2 This is a schematic diagram of a top view of the manufacturing process of the packaging structure with silicon dioxide light guides of the present invention.

[0017] Figure 3 This is a schematic diagram of the manufacturing process of the packaging structure with silicon dioxide light guides of the present invention before and after etching.

[0018] Figure 4 It is a schematic diagram of the manufacturing process of the packaging structure with silicon dioxide light guide wires of the present invention, and rapid high temperature processing (RTP).

[0019] Figure 5 This is a schematic diagram of the manufacturing process of the packaging structure with silicon dioxide light guide wires of the present invention.

[0020] Figure 6 This is another schematic diagram of the manufacturing process of the packaging structure with silicon dioxide light guide of the present invention.

[0021] Explanation of symbols:

[0022] 11: Substrate

[0023] 12: Chip

[0024] 121: Signal contact

[0025] 13: Silica light guide

[0026] 14: Packaging Department

[0027] 141: Connectors

[0028] Temp1: starting temperature

[0029] Temp2: Peak holding temperature

[0030] Temp3: End temperature

[0031] T1: Time 1

[0032] T2: Time 2

[0033] T3: Time 3

[0034] S1, S2, S3, S4, S5, S6, S7, S8, S9: steps. DETAILED DESCRIPTION

[0035] like Figure 1 、 Figure 2 As shown, the utility model is a packaging structure with a silica light guide 13, which includes: a substrate 11; at least one chip 12, the at least one chip 12 is arranged on the substrate, and the at least one chip 12 is provided with at least one signal contact part 121; at least one silica light guide 13, the at least one signal contact part 121 is connected via the silica light guide 13, thereby conducting and transmitting the optical signal of the at least one chip 12; and a packaging part 14, the packaging part 14 surrounds the substrate 11, the at least one chip 12, and the at least one silica light guide 13, wherein at least one connecting part 141 is provided on the outside of the packaging part 14, wherein the at least one signal contact part 121 is connected to the at least one connecting part 141 via the silica light guide 13, thereby outputting and inputting the optical signal of the at least one chip 12 inside the packaging part 14 to the outside of the packaging part 14.

[0036] like Figure 1 、 Figure 2 、 Figure 3 As shown, the present invention is a packaging structure having a silicon dioxide light-guiding wire 13, wherein the at least one silicon dioxide light-guiding wire 13 is an atomic layer deposition (ALD) of silicon dioxide (SiO2), and a silicon dioxide (SiO2) layer is formed on the substrate 11. The at least one silicon dioxide light-guiding wire 13 is separated by atomic layer etching (ALE), wherein the atomic layer deposition (ALD) of the at least one silicon dioxide light-guiding wire 13 is performed at an environment of 75 to 85 degrees Celsius to form the silicon dioxide (SiO2) layer on the substrate 11.

[0037] like Figure 4As shown, the present invention is a packaging structure having a silicon dioxide light guide 13, wherein the at least one silicon dioxide light guide 13 is subjected to hydrogen (H2) rapid high temperature processing (RTP), and the at least one silicon dioxide light guide 13 is strengthened and reduced to form a transparent quartz glass structure, thereby conducting and transmitting the optical signal of the at least one silicon dioxide light guide 13, wherein the rapid high temperature processing (RTP) Processing (RTP), wherein the starting temperature Temp1 is 0 to 25 degrees Celsius, the peak holding temperature Temp2 is 1000 to 1100 degrees Celsius, and the ending temperature Temp3 is 0 to 25 degrees Celsius. The first time T1 required for operating from the starting temperature Temp1 to the peak holding temperature Temp2 is 0.4 seconds to 0.6 seconds, the second time T2 required for operating at the peak holding temperature Temp2 is 2 seconds to 3 seconds, and finally the third time T3 required for operating from the peak holding temperature Temp2 to the ending temperature Temp3 is 0.4 seconds to 0.6 seconds.

[0038] like Figure 1 、 Figure 2 、 Figure 3 As shown, the present invention is a packaging structure with a silicon dioxide light guide 13, wherein the at least one silicon dioxide light guide 13 is formed by chemical vapor deposition (CVD) of silicon dioxide (SiO2), and a silicon dioxide (SiO2) layer is formed on the substrate 11, and the at least one silicon dioxide light guide 13 is separated by masking and etching.

[0039] like Figure 1 、 Figure 2 、 Figure 3 As shown, the present invention is a packaging structure with a silicon dioxide light guide 13, wherein the silicon dioxide (SiO2) layer is selected from at least one structure of polycrystalline and single crystal.

[0040] like Figure 1 、 Figure 2 、 Figure 3 As shown, the present invention is a packaging structure with a silicon dioxide light guide 13, wherein the at least one silicon dioxide light guide 13 is formed by physical vapor deposition of silicon dioxide (SiO2) by sputtering (sputter deposition / coating) to form a silicon dioxide (SiO2) layer on the substrate 11, and through masking and etching (etching), the at least one silicon dioxide light guide 13 is separated.

[0041] like Figure 5As shown, the present invention is a process for manufacturing a packaging structure having a silicon dioxide light guide 13, wherein the steps include: step S1: using a precursor (precursor), through SiH4+2O2->SiO2+2H2O, silane (SiH4, Silane) to produce silicon dioxide (SiO2), using atomic layer deposition (Atomic layer deposition.ALD) of silicon dioxide (SiO2) to form a silicon dioxide (SiO2) layer on the substrate 11; step S2: using the silicon dioxide (SiO2) layer, through atomic layer etching (atomic layer etching, ALE), to form at least one separated silicon dioxide light guide 13; step S3: using hydrogen (H2) to perform rapid high temperature treatment (Rapid Thermal Processing (RTP) is performed to strengthen and reduce the at least one silica light guide 13 to form a transparent quartz glass structure, thereby conducting and transmitting the optical signal of the at least one silica light guide 13; step S4: using at least one chip 12 to be arranged on the substrate, wherein the at least one chip 12 is provided with at least one signal contact component 121; step S5: using at least one signal contact component 121 to connect the corresponding at least one silica light guide 13, thereby conducting and transmitting the optical signal of the at least one chip 12; step S6: using at least one connecting component 141 provided on the outer side of the packaging part 14, the at least one signal contact component 121 is connected to the at least one connecting component 141 through the silica light guide 13, thereby outputting and inputting the optical signal of the at least one chip 12 inside the packaging part 14 to the outside of the packaging part 14; and step S7: using a packaging part 14 to surround the substrate 11, the at least one chip 12, and the at least one silica light guide 13.

[0042] like Figure 6 As shown, the present invention is a process for manufacturing a packaging structure having a silicon dioxide light guide 13, wherein the steps include: Step 8: Atomic layer deposition (ALD) of silicon dioxide (SiO2) is used to form a silicon dioxide (SiO2) layer on the substrate 11 at an environment of 75 to 85 degrees Celsius.

[0043] like Figure 6As shown, the present invention is a process for manufacturing a packaging structure having a silicon dioxide light-guiding wire 13, wherein the rapid thermal processing (RTP) step includes: Step 9: Using hydrogen (H2) to perform rapid thermal processing (RTP) on at least one silicon dioxide light-guiding wire 13, wherein the starting temperature Temp1 is 0 to 25 degrees Celsius, through the peak holding temperature Temp2 of 1000 to 1100 degrees Celsius, until the ending temperature Temp3 is 0 to 25 degrees Celsius, wherein the first time T1 required for operating from the starting temperature Temp1 to the peak holding temperature Temp2 is 0.4 seconds to 0.6 seconds, and then the second time T2 required for operating from the peak holding temperature Temp2 is 2 seconds to 3 seconds, and finally the third time T3 required for operating from the peak holding temperature Temp2 to the ending temperature Temp3 is 0.4 seconds to 0.6 seconds.

[0044] The above description and explanation are only the description of the preferred embodiment of the present invention. Those skilled in the art may make other modifications based on the claims defined below and the above description. However, these modifications should still be within the creative spirit of the present invention and within the scope of the rights of the present invention.

Claims

1. A packaging structure with a silicon dioxide light guide, characterized in that: include: a substrate; At least one chip, the at least one chip is disposed on the substrate, and the at least one chip is provided with at least one signal contact element; At least one silicon dioxide light guide, the at least one signal contact element is connected via the silicon dioxide light guide, thereby conducting and transmitting an optical signal of the at least one chip; and a packaging portion, the packaging portion surrounding the substrate, the at least one chip, and the at least one silicon dioxide light guide, At least one connector is provided on the outside of the packaging part, and the at least one signal contact part is connected to the at least one connector via the silica light guide, thereby outputting and inputting the optical signal of the at least one chip inside the packaging part to the outside of the packaging part.

2. The packaging structure with silicon dioxide light guide according to claim 1, wherein: The at least one silicon dioxide light guide is formed by atomic layer deposition of silicon dioxide to form a silicon dioxide layer on the substrate, and then the at least one silicon dioxide light guide is separated by atomic layer etching.

3. The packaging structure with silicon dioxide light guide according to claim 1, wherein: The at least one silicon dioxide guiding light is formed by vapor deposition of silicon dioxide to form a silicon dioxide layer on the substrate, and then through masking and etching, the at least one separated silicon dioxide guiding light is formed.

4. The packaging structure with silicon dioxide light guide according to claim 1, wherein: The silicon dioxide layer has at least one structure selected from polycrystalline and single crystal.

5. The packaging structure with silicon dioxide light guide according to claim 1, wherein: The at least one silicon dioxide guiding light is formed by physical vapor deposition of sputtered silicon dioxide to form a silicon dioxide layer on the substrate, and then through masking and etching, the at least one separated silicon dioxide guiding light is formed.

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