Display device
By using metal separators and a color conversion layer formed by an inkjet process in a display device, the problems of high resolution and color conversion efficiency of existing display devices are solved, and efficient light output and stable color conversion effects are achieved.
Patent Information
- Application Number
- CN202422738260.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Priority Date
- 2023-11-15
- Filing Date
- 2024-11-11
- Publication Date
- 2025-10-10
- Estimated Expiration
- 2034-11-11
AI Technical Summary
Existing display devices face challenges in achieving high resolution and efficient color conversion, especially in the stability of the color conversion layer and the light output efficiency.
A spacer made of a metal material is used to form a color conversion layer through an inkjet process, and a multilayer structure is set in the display device, including first and second color conversion layers and a transmission layer. The spacer is made of a metal material with a thickness in the range of 0.1 microns to 5 microns, which is used to stably provide high-resolution display.
The light output efficiency of the display device and the reliability of the color conversion layer are improved, ensuring high-resolution display, while improving the stability of the inkjet process and the optical viewing angle.
Smart Images

Figure CN223428841U_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to a display device. Background Art
[0002] A light-emitting element is a device that emits light when positive holes supplied from an anode and electrons supplied from a cathode recombine within a light-emitting layer formed between the anode and cathode to form excitons. The excitons then stabilize and become stable. Light-emitting devices offer various advantages, such as wide viewing angles, fast response speeds, thinness, and low power consumption. Therefore, they are widely used in various electrical and electronic devices, such as televisions, monitors, and mobile phones.
[0003] Recently, a display device including a color conversion layer has been proposed to realize a high-efficiency display device. The color conversion layer can convert incident light into different colors. Utility Model Content
[0004] The present embodiment can provide a high-resolution display device by providing a partition made of a metal material.
[0005] According to an embodiment, a display device includes: a substrate; a transistor disposed on the substrate; a light-emitting element electrically connected to the transistor; an encapsulation layer disposed on the light-emitting element; a partition disposed on the encapsulation layer and defining a first opening, a second opening, and a third opening; a first color conversion layer disposed in the first opening; a second color conversion layer disposed in the second opening; and a transmission layer disposed in the third opening, wherein the partition is made of a metal material, and a distance from a center of a portion of the partition to the first color conversion layer is equal to a distance from the center of the portion of the partition to the transmission layer.
[0006] The separator may be a single layer.
[0007] The transmission layer, the first color conversion layer, the transmission layer, and the second color conversion layer may be repeatedly disposed along the first direction.
[0008] An upper surface of the transmission layer may be disposed at a higher level than the upper surface of the first color conversion layer.
[0009] The thickness of the spacer may be in a range of about 0.1 micrometers to about 5 micrometers, inclusive.
[0010] The display device may include a pattern layer spaced apart from the light emitting element.
[0011] The pattern layer may include the same material as the transmission layer.
[0012] The pattern layer may be provided on the same layer as the first color conversion layer, the second color conversion layer, and the transmission layer.
[0013] The pattern layer may be located between the first color conversion layer and the second color conversion layer along a first direction.
[0014] A width of the first color conversion layer may be greater than a width of the transmission layer.
[0015] The display device may further include a light blocking layer disposed on the same layer as the spacer.
[0016] The thickness of the spacer may decrease toward the base.
[0017] The upper surface of the partition may include a recessed portion.
[0018] The transmission layer may have a tapered shape.
[0019] According to an embodiment, a display device includes a substrate; a transistor disposed on the substrate; a light-emitting element electrically connected to the transistor; an encapsulation layer disposed on the light-emitting element; a partition disposed on the encapsulation layer and defining a first opening, a second opening, and a third opening; a first color conversion layer disposed in the first opening; a second color conversion layer disposed in the second opening; and a transmissive layer disposed in the third opening, wherein the partition is a single layer of metal.
[0020] An upper surface of the transmission layer may be disposed at a higher level than an upper surface of the first color conversion layer.
[0021] The thickness of the spacer may be in a range of about 0.1 micrometers to about 5 micrometers, inclusive.
[0022] The transmission layer, the first color conversion layer, the transmission layer, and the second color conversion layer may be repeatedly disposed along the first direction.
[0023] The display device may include a pattern layer spaced apart from the light emitting element.
[0024] The pattern layer may be located between the first color conversion layer and the second color conversion layer along a first direction.
[0025] According to the embodiment, a spacer made of a metal material is provided, and a color conversion layer formed by an inkjet process can be stably provided.
[0026] Furthermore, a high-resolution display device can be provided. BRIEF DESCRIPTION OF THE DRAWINGS
[0027] Figure 1 is a schematic exploded perspective view of a display device according to an embodiment.
[0028] Figure 2 is a schematic cross-sectional view of a display panel according to an embodiment.
[0029] Figure 3 is a diagram of a portion of a display panel according to an embodiment.
[0030] Figure 4 It is along Figure 3 A cross-sectional view taken along line AA'.
[0031] Figure 5 It is along Figure 3 A cross-sectional view taken along line BB'.
[0032] Figure 6A yes Figure 4 Detailed cross-sectional view of an embodiment of the present invention.
[0033] Figure 6B yes Figure 6A Detailed cross-sectional view of another embodiment of the present invention.
[0034] Figure 7 、 Figure 8 、 Figure 9 and Figure 10 is a cross-sectional view of a method of manufacturing a display device according to an embodiment.
[0035] Figure 11 is a cross-sectional view of a partial region of a display panel according to an embodiment.
[0036] Figure 12 、 Figure 13 、 Figure 14 、 Figure 15 and Figure 16 is a plan view of a partial area of a display panel according to an embodiment.
[0037] Figure 17 is a cross-sectional view of a partial region of a display panel according to an embodiment.
[0038] Figure 18 、 Figure 19 and Figure 20 is a plan view of a partial area of a display panel according to an embodiment.
[0039] Figure 21 and Figure 22 is a plan view of a partial area of a display panel according to an embodiment.
[0040] Figure 23 、 Figure 24 、 Figure 25 、 Figure 26 and Figure 27 Each is a cross-sectional view of a partial region of a display panel according to an embodiment. DETAILED DESCRIPTION
[0041] Hereinafter, various embodiments of the present disclosure will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement the embodiments.
[0042] The embodiments may be embodied in many different forms and are not limited to the embodiments described herein.
[0043] In order to clearly illustrate the embodiments, parts irrelevant to the description are omitted, and the same or similar components are given the same reference numerals throughout the specification and drawings.
[0044] Furthermore, the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of explanation, and thus the present disclosure is not necessarily limited to the shown contents.
[0045] In the drawings, the thickness may be exaggerated to clearly express layers and regions.
[0046] Also, in the drawings, the thicknesses of some layers and regions may be exaggerated for convenience of explanation.
[0047] In addition, when a component such as a layer, film, region, plate, etc. is referred to as being “over” or “on” another component, this not only includes the case where the component is “directly over” the other component, but also includes the case where another component is present between the component and the other component.
[0048] In contrast, when a component is referred to as being “directly on” another component, this means that there are no other components between the component and the other component.
[0049] Furthermore, “above” or “on” a reference component means disposed above or below the reference component, and does not necessarily mean disposed “above” or “on” the reference component in a direction opposite to gravity.
[0050] Furthermore, throughout the specification, when a component is referred to as “including” a certain component, unless particularly stated otherwise, this means that the component may further include other components, rather than excluding other components.
[0051] Furthermore, throughout the specification, when reference is made to “in a plan view,” this means when the target portion is viewed from above, and when reference is made to “in a cross section,” this means when the cross section of the target portion is cut vertically and viewed from the side.
[0052] In the following, reference will be made to Figure 1 A display device according to an embodiment is described. Figure 1 is a schematic exploded perspective view of a display device according to an embodiment.
[0053] refer to Figure 1 , the display device 1000 according to the embodiment may include a display panel DP and a housing HM.
[0054] The side of the display panel DP where an image is displayed is parallel to a plane defined by the first direction DR1 and the second direction DR2. The third direction DR3 indicates the normal direction of the side where the image is displayed, that is, the thickness direction of the display panel DP. The front (or upper) surface and the rear (or lower) surface of each member are separated in the third direction DR3. However, the directions indicated by the first direction DR1, the second direction DR2, and the third direction DR3 are relative concepts and can be converted to other directions.
[0055] The display panel DP may be a flat rigid display panel, but is not limited thereto, and may be a flexible display panel. The display panel DP may be made of an organic light-emitting display panel. However, the type of the display panel DP is not limited thereto, and may be made of various types of panels. For example, the display panel DP may be made of a liquid crystal display panel, an electrophoretic display panel, an electrowetting display panel, or the like.
[0056] In addition, the display panel DP can be made of a next-generation display panel such as a micro light-emitting diode (LED) display panel, a quantum dot light-emitting diode display panel, or a quantum dot organic light-emitting diode display panel. A micro LED display panel is made of light-emitting diodes measuring 10 to 100 microns to form each pixel. These micro light-emitting diode display panels have the following advantages: they use inorganic materials; backlights can be omitted; response speeds are fast; high brightness can be achieved with low power consumption; and they do not break when bent. A quantum dot light-emitting diode display panel is made by attaching a film containing quantum dots or depositing a material containing quantum dots. Quantum dots are particles made of inorganic materials such as indium and cadmium, and they emit light independently, and the quantum dots have a diameter of a few nanometers or less. By controlling the particle size of the quantum dots, light of the desired color can be displayed. A quantum dot organic light-emitting diode display panel uses a blue organic light-emitting diode as a light source, and displays colors by attaching a film containing red and green quantum dots or depositing a material containing red and green quantum dots on the quantum dot organic light-emitting diode.
[0057] The display panel DP according to the embodiment may be made of various other display panels.
[0058] like Figure 1As shown in FIG, the display panel DP includes a display area DA that displays an image and a non-display area PA adjacent to the display area DA. The non-display area PA is an area where no image is displayed. For example, the display area DA may have a square shape in a plan view, and the non-display area PA may have a shape surrounding the display area DA. However, the shapes of the display area DA and the non-display area PA may be designed relatively to each other and are not limited thereto.
[0059] The housing HM provides a predetermined internal space. The display panel DP is installed inside the housing HM. In addition to the display panel DP, various electronic components such as a power supply unit, a storage device, and an audio input / output module may be installed inside the housing HM.
[0060] In the following, reference will be made to Figure 2 A display area of a display panel according to an embodiment is described. Figure 2 is a schematic cross-sectional view of a display panel according to an embodiment.
[0061] refer to Figure 2 , can be found in the corresponding Figure 1 A plurality of pixels PA1, PA2, and PA3 are formed on a substrate SUB of a display area DA. Each of the plurality of pixels PA1, PA2, and PA3 may include a plurality of transistors and a light emitting element connected to the plurality of transistors. An encapsulation layer ENC may be provided on the plurality of pixels PA1, PA2, and PA3. The display area DA may be protected from external air or moisture by the encapsulation layer ENC. The encapsulation layer ENC may be integrally provided to overlap the entire surface of the display area DA, and may be partially provided in the non-display area PA (see FIG. Figure 1 )middle.
[0062] A first color conversion unit CC1 , a second color conversion unit CC2 , and a transmission unit CC3 may be disposed on the encapsulation layer ENC.
[0063] The first color conversion unit CC1 overlaps with the first pixel PA1, the second color conversion unit CC2 overlaps with the second pixel PA2, and the transmission unit CC3 overlaps with the third pixel PA3. Light emitted from the first pixel PA1 can pass through the first color conversion unit CC1 to provide red light LR. Light emitted from the second pixel PA2 can pass through the second color conversion unit CC2 to provide green light LG. Light emitted from the third pixel PA3 can pass through the transmission unit CC3 to provide blue light LB.
[0064] In the following, reference will be made to Figure 3 A display device according to an embodiment is described through FIG. 6 . Figure 3 is a diagram of a portion of a display panel according to an embodiment, Figure 4 It is along Figure 3a cross-sectional view taken along a line A-A' of FIG. 1, Figure 5 is a cross-sectional view taken along a line B-B' of FIG. 1, Figure 3 is a detailed cross-sectional view of an embodiment of Figure 6A is a detailed cross-sectional view of another embodiment of Figure 4 Figure 6B Figure 6A
[0065] Referring to Figure 3 According to an embodiment, a plurality of pixels is disposed in a display panel. The plurality of pixels can include a first pixel PX1, a second pixel PX2, and a third pixel PX3. For example, red light can be emitted from the first pixel PX1, green light can be emitted from the second pixel PX2, and blue light can be emitted from the third pixel PX3.
[0066] Figure 3 An embodiment is illustrated in which each of the first pixel PX1, the second pixel PX2, and the third pixel PX3 has a square shape, but is not limited thereto, and the first pixel PX1, the second pixel PX2, and the third pixel PX3 can have various shapes.
[0067] Further, Figure 3 An embodiment is illustrated in which the third pixel PX3, the first pixel PX1, the third pixel PX3, and the second pixel PX2 are disposed along a first direction DR1, but is not limited thereto. The first pixel PX1, the second pixel PX2, and the third pixel PX3 can be disposed in various forms.
[0068] Non-light emitting areas NLA1 and NLA2 can be provided with respect to the first pixel PX1, the second pixel PX2, and the third pixel PX3 in a second direction DR2. A partition MB can be provided between the first pixel PX1, the second pixel PX2, and the third pixel PX3, and the partition MB will be described in detail later.
[0069] Referring to Figure 4 A display panel according to an embodiment can include a color conversion unit CC provided on a display unit DC. The color conversion unit CC can include a partition MB provided on the display unit DC. The display unit DC includes a light emitting element ED provided on a substrate SUB1. The light emitting element ED is described in more detail in the discussion of Figure 6A According to an embodiment, the light emitting element ED can include a first electrode electrically connected to a transistor, a light emitting layer, and a second electrode.
[0070] The spacer MB according to an embodiment can be made of a metal material. The metal spacer MB can improve light output efficiency by directly reflecting light emitted from the color conversion layers CCL1 and CCL2 and the transmissive layers TM1 and TM2 toward the side. The spacer MB is located between the first color conversion layer CCL1 and the first transmissive layer TM1, between the first color conversion layer CCL1 and the second transmissive layer TM2, between the second transmissive layer TM2 and the second color conversion layer CCL2, and between the second color conversion layer CCL2 and the first transmissive layer TM1. In other words, the spacer MB can have a shape that surrounds each of the first color conversion layer CCL1, the second color conversion layer CCL2, the first transmissive layer TM1, and the second transmissive layer TM2. The thickness of the spacer MB can be within a range of approximately 0.1 microns to 5 microns, inclusive, for example, approximately 1 micron or less. The spacer MB can be provided with a relatively thin thickness. Therefore, a high-resolution display device can be provided, while at the same time, the reliability of the inkjet process can be improved by ensuring a sufficient width between the first color conversion layer CCL1 and the second color conversion layer CCL2.
[0071] The spacer MB may define a first opening OP1, a second opening OP2, and a third opening OP3. The sizes of the first opening OP1, the second opening OP2, and the third opening OP3 may be different or the same. A first color conversion layer CCL1 may be disposed within the first opening OP1. The first color conversion layer CCL1 may convert supplied light into red light. The first color conversion layer CCL1 may include quantum dots. A second color conversion layer CCL2 may be disposed within the second opening OP2. The second color conversion layer CCL2 may convert supplied light into green light. The second color conversion layer CCL2 may include quantum dots.
[0072] Transmissive layers TM1 and TM2 may be disposed within the third opening OP3. The transmissive layers TM1 and TM2 may transmit light supplied from the display unit DC. The transmissive layers TM1 and TM2 may include a scatterer. The scatterer may include one or more selected from the group consisting of SiO2, BaSO4, Al2O3, ZnO, ZrO2, and TiO2. The transmissive layers TM1 and TM2 may include a polymer resin and a scatterer included in the polymer resin. For example, the transmissive layers TM1 and TM2 may include TiO2, but are not limited thereto.
[0073] The first and second color conversion layers CCL1 and CCL2 may be formed using an inkjet process, and the transmissive layers TM1 and TM2 may be formed using a photolithography process. In some embodiments, the upper surfaces of the first and second color conversion layers CCL1 and CCL2 may have a shape that is concave toward the display cell DC. The upper surfaces of the first and second color conversion layers CCL1 and CCL2 may be positioned at a lower level than the upper surfaces of the transmissive layers TM1 and TM2, but are not limited thereto. The widths of the transmissive layers TM1 and TM2 may be smaller than the widths of the first and second color conversion layers CCL1 and CCL2.
[0074] The spacer MB according to an embodiment may be provided as a single layer of metal. Therefore, a first distance t1 from the center of the spacer MB to the first color conversion layer CCL1 may be equal to a second distance t2 from the center of the spacer MB to the first transmission layer TM1.
[0075] The first color converting layer CCL1 , the second color converting layer CCL2 , and the transmissive layers TM1 and TM2 according to the embodiment may overlap the light emitting element ED included in the display cell DC.
[0076] refer to Figure 3 and Figure 5 According to an embodiment, non-emission areas NLA1 and NLA2 are arranged in the second direction DR2 relative to the first pixel PX1, the second pixel PX2, and the third pixel PX3. The non-emission areas NLA1 and NLA2 and the pixels PX1, PX2, and PX3 may be separated by a partition MB. Patterned layers PR1 and PR2 formed of the same material as the transmissive layers TM1 and TM2 may be provided in the non-emission areas NLA1 and NLA2. However, since separate light-emitting elements are not provided in the portion of the display unit DC corresponding to the non-emission areas NLA1 and NLA2, light is not emitted outside the display device in the non-emission areas NLA1 and NLA2.
[0077] The pattern layers PR1 and PR2 can be formed from the same material in the same process as the transmissive layers TM1 and TM2. The pattern layers PR1 and PR2 can be disposed on the same layer as the color conversion layers CCL1 and CCL2 and the transmissive layers TM1 and TM2. Since the pattern layers PR1 and PR2 are disposed in the non-emission areas NLA1 and NLA2, the pattern layers PR1 and PR2 may not overlap with the light-emitting elements ED. The pattern layers PR1 and PR2 may be spaced apart from the light-emitting elements ED.
[0078] In the display panel according to the present embodiment, the first color conversion layer CCL1 converts incident light into red light and emits the red light. In addition, the second color conversion layer CCL2 converts incident light into green light and emits the green light. However, light incident on the transmission layers TM1 and TM2 is transmitted without conversion of the color. The incident light can include blue light. The incident light can be blue light alone or a mixture of blue light and green light. Alternatively, the incident light can include all of blue light, green light, and red light.
[0079] Quantum dots included in the first color conversion layer CCL1 and the second color conversion layer CCL2 will be described in detail below. In the present specification, quantum dots (hereinafter also referred to as semiconductor nanocrystals) include II-VI compounds, III-V compounds, IV-VI compounds, IV group elements or compounds, I-III-VI compounds, II-III-VI compounds, I-II-IV-VI compounds, or combinations thereof.
[0080] The II-VI compounds include binary compounds selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and mixtures thereof; ternary compounds selected from the group consisting of AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, and mixtures thereof; and quaternary compounds selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, and mixtures thereof. The II-VI compounds can further include a Group III metal.
[0081] Group III-V compounds include binary compounds selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof; ternary compounds selected from the group consisting of GaNPs, GaNAs, GaNSb, GaPAs, GaPSb, AlNPs, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNPs, InNAs, InNSb, InPAs, InPSb, and mixtures thereof; and quaternary compounds selected from the group consisting of GaAlNPs, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNPs, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNPs, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and mixtures thereof. Group III-V compounds may also include Group II metals (e.g., InZnP).
[0082] Group IV-VI compounds include binary compounds selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe and their mixtures; ternary compounds selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and their mixtures; and quaternary compounds selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe and their mixtures.
[0083] The Group IV element or compound is a single element selected from the group consisting of Si and Ge, and a combination thereof; and a binary compound selected from the group consisting of SiC and SiGe, and a combination thereof, but is not limited thereto.
[0084] Examples of Group I-III-VI compounds include, but are not limited to, CuInSe2, CuInS2, CuInGaSe, and CuInGaS.
[0085] Examples of Group I-II-IV-VI compounds include, but are not limited to, CuZnSnSe and CuZnSnS.
[0086] Group II-III-VI compounds include ZnGaS, ZnAlS, ZnInS, ZnGaSe, ZnAlSe, ZnInSe, ZnGaTe, ZnAlTe, ZnInTe, ZnGaO, ZnAlO, ZnInO, HgGaS, HgAlS, HgInS, HgGaSe, HgAlSe, HgInSe, HgGaTe, HgAlTe, and can be selected from the group consisting of HgInTe, MgGaS, MgAlS, MgInS, MgGaSe, MgAlSe, MgInSe, and combinations thereof, but are not limited thereto.
[0087] In embodiments, the quantum dots can not include cadmium.
[0088] The quantum dots can include semiconductor nanocrystals based on Group III-V compounds including indium and phosphorus. The Group III-V compounds can also include zinc.
[0089] The quantum dots can include semiconductor nanocrystals based on Group II-VI compounds including a chalcogen element (e.g., sulfur, selenium, tellurium, or combinations thereof) and zinc.
[0090] In the quantum dots, the above-mentioned binary compounds, ternary compounds, or quaternary compounds can exist in a uniform concentration in the particles, or can exist in a concentration distribution partially divided into different states in the same particles.
[0091] Further, one quantum dot can have a core-shell structure in which a shell surrounds a core. An interface between the core and the shell can have a concentration gradient in which a concentration of an element present in the shell decreases toward the center. In some embodiments, the quantum dot can have a core-shell structure including a core including the above-mentioned nanocrystal and a shell surrounding the core. The shell of the quantum dot can serve as a passivation layer to maintain a semiconductor property by preventing chemical denaturation of the core, or the shell of the quantum dot can serve as a charging layer to impart an electrophoretic property to the quantum dot. The shell can be single-layered or multi-layered. The interface between the core and the shell can have a concentration gradient in which a concentration of an element present in the shell decreases toward the center.
[0092] Examples of quantum dot shells include metal or non-metal oxides, semiconductor compounds, or combinations thereof. For example, the metal or non-metal oxide is a binary compound such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, or MgAl2O4, CoFe2O4, NiFe2O4, CoMn2O4, etc., but the present disclosure is not limited thereto. In addition, semiconductor compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, etc. However, the present disclosure is not limited thereto.
[0093] The interface between core and shell can have the concentration gradient that the concentration of the element that wherein is present in the shell reduces towards the center.In addition, semiconductor nanocrystal can have the structure that comprises single semiconductor nanocrystal core and the multilayer shell around core.In an embodiment, multilayer shell can have two or more layers, such as two, three, four, five or more layers.The adjacent two layers of shell can have single composition or different compositions.In multilayer shell, each layer can have the composition that changes along radius.
[0094] The quantum dots may have a full width at half maximum (FWHM) of an emission wavelength spectrum of about 45 nm or less, preferably about 40 nm or less, and more preferably about 30 nm or less, and within this range, color purity or color reproducibility may be improved. In addition, since light emitted by these quantum dots is emitted in all directions, the optical viewing angle may be improved.
[0095] The quantum dots may have different band gaps between the shell material and the core material. For example, the band gap of the shell material may be larger than the band gap of the core material. In other embodiments, the band gap of the shell material may be smaller than the band gap of the core material.
[0096] A quantum dot can have a multi-layer shell. In a multi-layer shell, the band gap of the outer layer can be larger than the band gap of the inner layer (ie, the layer closer to the core). In a multi-layer shell, the band gap of the outer layer can be smaller than the band gap of the inner layer.
[0097] Quantum dots can control the absorption / emission wavelength by adjusting the composition and size of the quantum dots. The maximum emission peak wavelength of quantum dots can range from ultraviolet wavelengths to infrared wavelengths or longer.
[0098] The quantum dots can have a quantum efficiency of at least about 10%, such as at least about 30%, at least about 50%, at least about 60%, at least about 70%, at least about 90%, or 100%.
[0099] Quantum dots can have a relatively narrow optical spectrum. Quantum dots can have a full width at half maximum of an emission wavelength spectrum of about 50 nm or less, such as about 45 nm or less, about 40 nm or less, or about 30 nm or less.
[0100] Quantum dots can have a particle size of about 1 nm or greater and about 100 nm or less. The size of a particle refers to the diameter of the particle or a diameter converted by assuming a spherical shape from a two-dimensional image obtained from transmission electron microscopy analysis. Quantum dots can have a size of about 1 nm to about 50 nm, such as at least 2 nm, at least 3 nm, or at least 4 nm and at most 50 nm, at most 40 nm, at most 30 nm, at most 20 nm, at most 15 nm, or at most 10 nm or less.
[0101] The shape of a quantum dot is not particularly limited. For example, the shape of a quantum dot can include, but is not limited to, a sphere, a polyhedron, a pyramid, a multi-rod, a cube, a cuboid, a nanotube, a nanorod, a nanowire, a nanoplate, or a combination thereof.
[0102] Quantum dots are commercially available or can be synthesized as appropriate. The particle size of a quantum dot can be relatively freely controlled during colloidal synthesis, and the particle size can also be uniformly adjusted.
[0103] Quantum dots can include organic ligands (e.g., with hydrophobic molecules or hydrophilic molecules). Organic ligand residues can be bound to the surface of a quantum dot. Organic ligands include RCOOH, RNH2, R2NH, R3N, RSH, R3PO, R3P, ROH, RCOOR, RPO(OH)2, RHPOOH, R2POOH, or a combination thereof, where each R is independently a substituted or unsubstituted C3 to C40 (e.g., C5 or more and C24 or less) alkyl, a substituted or unsubstituted alkenyl, a substituted or unsubstituted C3 to C40 aliphatic hydrocarbon group, a substituted or unsubstituted C6 to C40 aryl, a substituted or unsubstituted C6 to C40 (e.g., C6 or more and C20 or less) aromatic hydrocarbon group, or a combination thereof.
[0104] Examples of the organic ligand include: thiol compounds such as methanethiol, ethanethiol, propanethiol, butanethiol, pentanethiol, hexanethiol, octanethiol, dodecanethiol, hexadecanethiol, octadecanethiol, and benzylthiol; amines such as methaneamine, ethaneamine, propanethiol, butanethiol, pentanethiol, hexanethiol, octadecanethiol, and benzylthiol; amines such as methaneamine, ethaneamine, propanethiol, butanethiol, pentanethiol, hexanethiol, octadecanethiol, nonylamine, decylamine, dodecane, hexadecane, octadecane, dimethylamine, diethylamine, dipropylamine, tributylamine, trioctylamine, and the like; carboxylic acid compounds such as formic acid, acetic acid, propionic acid, butanethiol, pentanethiol, hexanethiol, heptanethiol, octanethiol, dodecanethiol, hexadecanethiol, octadecanethiol, oleic acid, and the like. Benzoic acid; phosphine compounds such as methyl phosphine, ethyl phosphine, propyl phosphine, butyl phosphine, pentyl phosphine, octyl phosphine, dioctyl phosphine, tributyl phosphine, trioctyl phosphine, etc.; phosphines such as methyl phosphine oxide, ethyl phosphine oxide, propyl phosphine oxide, butyl phosphine oxide, pentyl phosphine oxide, tributyl phosphine oxide, octyl phosphine oxide, dioctyl phosphine oxide and trioctyl phosphine oxide; diphenyl phosphine or triphenyl phosphine compounds or their oxide compounds; C5 to C20 alkylphosphonic acids such as hexylphosphonic acid, octylphosphonic acid, dodecylphosphonic acid, tetradecylphosphonic acid, hexadecylphosphonic acid and octadecylphosphonic acid; but are not limited to these.
[0105] The quantum dots may include the hydrophobic organic ligand alone, or a mixture of one or more types. The hydrophobic organic ligand may not contain a photopolymerizable residue (eg, an acrylate group, a methacrylate group, etc.).
[0106] Although not shown in the drawings, separate passivation layers may be provided between the first color conversion layer and the spacer, between the second color conversion layer and the spacer, and between the transmissive layer and the spacer. The passivation layer may include an inorganic material or an organic material. The passivation layer may be used to protect a spacer made of metal.
[0107] In the following, reference will be made to Figure 6A and Figure 6B The color conversion unit CC described above is described in more detail (see Figure 4 ) and display unit DC (see Figure 4 ) is a cross-section of a display panel of FIG. Descriptions of at least some of the above-mentioned components are omitted.
[0108] First, refer to Figure 6A The display unit DC according to the embodiment includes a first substrate SUB1. The first substrate SUB1 may include a flexible material such as plastic that can be bent, folded, or rolled. A buffer layer BF may be provided on the first substrate SUB1. The buffer layer BF may include silicon nitride SiN x, silicon dioxide SiO2, or silicon oxynitride. The buffer layer BF is disposed between the first substrate SUB1 and the semiconductor layer ACT, and the buffer layer BF improves the characteristics of polycrystalline silicon by blocking impurities from the first substrate SUB1 during a crystallization process for forming polycrystalline silicon, and by planarizing the first substrate SUB1, stress of the semiconductor layer ACT formed on the buffer layer BF can be relieved.
[0109] The semiconductor layer ACT is disposed on the buffer layer BF. The semiconductor layer ACT may be made of polycrystalline silicon or an oxide semiconductor. The semiconductor layer ACT includes a channel region C, a source region S, and a drain region D. The source region S and the drain region D are disposed on either side of the channel region C. The channel region C is an intrinsic semiconductor that is not doped with impurities, while the source region S and the drain region D are extrinsic semiconductors that are doped with conductive impurities.
[0110] The semiconductor layer ACT may be made of an oxide semiconductor. In this case, a passivation layer (not shown) may be added to protect the oxide semiconductor material, which is susceptible to external environments such as high temperatures.
[0111] The gate insulating layer GI is provided on the semiconductor layer ACT. The gate insulating layer GI may be a layer containing silicon nitride (SiN x ), a single layer or multiple layers of at least one of silicon dioxide (SiO2) and silicon oxynitride. The gate electrode GE is provided on the gate insulating layer GI, and the gate electrode GE includes any one of copper (Cu), a copper alloy, aluminum (Al), an aluminum alloy, molybdenum (Mo) and a molybdenum alloy, and the gate electrode GE may be a multilayer in which metal films are stacked.
[0112] The interlayer insulating layer IL1 is disposed on the gate electrode GE and the gate insulating layer GI. The interlayer insulating layer IL1 may include silicon nitride (SiN x ), silicon dioxide (SiO2) or silicon oxynitride.
[0113] Openings exposing the source region S and the drain region D are provided in the interlayer insulating layer IL1. A source electrode SE and a drain electrode DE are provided on the interlayer insulating layer IL1. The source electrode SE and the drain electrode DE are respectively connected to the source region S and the drain region D of the semiconductor layer ACT through the openings formed in the interlayer insulating layer IL1.
[0114] A passivation layer IL2 is provided on the interlayer insulating layer IL1, the source electrode SE, and the drain electrode DE. The passivation layer IL2 covers and flattens the interlayer insulating layer IL1, the source electrode SE, and the drain electrode DE, so that the first electrode E1 can be formed on the passivation layer IL2 without a step. The passivation layer IL2 can be made of an organic material such as a polyacrylate resin or a polyimide resin, or made of a laminated film of an organic material and an inorganic material.
[0115] The first electrode E1 is disposed on the passivation layer IL2 and is connected to the drain electrode DE through an opening in the passivation layer IL2.
[0116] A driving transistor including a gate electrode GE, a semiconductor layer ACT, a source electrode SE, and a drain electrode DE is electrically connected to the first electrode E1 to supply a driving current to the light emitting element ED.
[0117] Apart from Figure 6A The display device according to this embodiment includes a switching transistor (not shown) connected to the data line and transmitting the data voltage in response to the scan signal, and a switching transistor (not shown) connected to the driving transistor and driven in response to the scan signal, and the display device may further include a compensation transistor (not shown) for compensating for the threshold voltage of the driving transistor.
[0118] The pixel-defining layer (PDL) is located on the passivation layer IL2 and the first electrode E1, and the pixel-defining layer (PDL) may have a pixel opening that overlaps with the first electrode E1 and defines a light-emitting area. The pixel-defining layer (PDL) may include an organic material such as a polyacrylate resin or a polyimide resin, or a silicon-based inorganic material. The pixel opening may have a planar shape substantially similar to that of the first electrode E1, and may have a rhombus-like shape or an octagonal shape in plan view, but is not limited thereto and may have any shape such as a square or other polygonal shape.
[0119] The light-emitting layer EML is disposed on the first electrode E1 overlapping the pixel opening. The light-emitting layer EML can be made of a low-molecular organic material or a high-molecular organic material such as poly (3,4-ethylenedioxythiophene) (PEDOT). In addition, the light-emitting layer EML may include a hole injection layer (HIL), a hole transport layer (HTL), an electron transport layer (ETL) and an electron injection layer (EIL), and the light-emitting layer EML may be a multilayer comprising one or more layers. The light-emitting layer EML may be mostly disposed within the pixel opening and may also be disposed on the side of the pixel-defining layer PDL or on the pixel-defining layer PDL.
[0120] The second electrode E2 is disposed on the light emitting layer EML. The second electrode E2 may be disposed across a plurality of pixels and may receive a common voltage through a common voltage transmitter (not shown) in a non-display area.
[0121] The first electrode E1, the light-emitting layer EML, and the second electrode E2 may form a light-emitting element ED. Here, the first electrode E1 may be an anode, serving as a hole-injecting electrode, and the second electrode E2 may be a cathode, serving as an electron-injecting electrode. However, this embodiment is not limited thereto, and depending on the method of driving the organic light-emitting display device, the first electrode E1 may be a cathode, and the second electrode E2 may be an anode. Holes and electrons are injected from the first electrode E1 and the second electrode E2, respectively, into the light-emitting layer EML. When excitons generated by the recombination of the injected holes and electrons transition from an excited state to a ground state, light emission occurs.
[0122] The encapsulation layer ENC is located on the second electrode E2. The encapsulation layer ENC can seal the display layer by covering not only the top surface of the display layer including the light-emitting element ED but also the side surfaces of the display layer. Because the light-emitting element is susceptible to moisture and oxygen, the encapsulation layer ENC seals the display layer and blocks the influx of external moisture and oxygen. The encapsulation layer ENC may include multiple layers and may form a composite film comprising both inorganic and organic layers. It may also be a three-layer structure comprising a first inorganic layer, an organic layer, and a second inorganic layer, formed sequentially.
[0123] The color conversion unit CC described above is disposed on the encapsulation layer ENC. The color conversion unit CC includes a spacer MB disposed on the encapsulation layer ENC. In addition, the first color conversion layer CCL1, the second color conversion layer CCL2, the first transmission layer TM1, and the second transmission layer TM2 may be disposed in the opening of the spacer MB.
[0124] The color conversion cell CC includes a second substrate SUB2 overlapping the first substrate SUB 1. The second substrate SUB2 may include a flexible material such as plastic that may be easily bent, folded, or rolled.
[0125] A filling layer FL may be disposed on the spacer MB, the first and second color conversion layers CCL1 and CCL2, and the transmissive layers TM1 and TM2. The filling layer FL may combine components disposed on the first substrate SUB1 with components disposed on the second substrate SUB2. A display panel may be formed by the filling layer FL.
[0126] The color filter unit includes a first color filter CF1, a second color filter CF2, and a third color filter CF3 disposed between the second substrate SUB2 and the display unit DC. The first color filter CF1 may overlap the first color conversion layer CCL1. The first color filter CF1 transmits red light that has passed through the first color conversion layer CCL1 and absorbs light of other wavelengths, thereby improving the purity of the red light emitted to the outside of the display device. The second color filter CF2 may overlap the second color conversion layer CCL2. The second color filter CF2 transmits green light that has passed through the second color conversion layer CCL2 and absorbs light of other wavelengths, thereby improving the purity of the green light emitted to the outside of the display device. The third color filter CF3 may overlap the first and second transmission layers TM1 and TM2. The third color filter CF3 transmits blue light that has passed through the first and second transmission layers TM1 and TM2 and absorbs light of other wavelengths, thereby improving the purity of the blue light emitted to the outside of the display device.
[0127] At least two of the third color filter CF3, the second color filter CF2, and the first color filter CF1 may overlap with each other to serve as a light blocking layer. For example, the first color filter CF1 and the third color filter CF3 may overlap. For example, the second color filter CF2 and the third color filter CF3 may overlap. At least the overlapping portions of the color filters CF1, CF2, and CF3 may overlap with the spacer MB.
[0128] According to an embodiment, at least two overlapping portions of the pixel defining layer PDL, the spacer MB, and the color filters CF1, CF2, and CF3 may be disposed between adjacent light emitting layers EML and may overlap along the thickness direction of the first substrate SUB1. In particular, the center of the pixel defining layer PDL disposed between the light emitting layers EML, the center of the spacer MB, and the centers of at least two overlapping regions of the color filters CF1, CF2, and CF3 may substantially overlap along an imaginary line extending in the thickness direction of the first substrate SUB1. In addition, although Figure 6A CF1, CF2 and CF3 may also overlap with the pattern layer PR1 (see FIG. 1 ) provided in the non-emission areas NLA1 and NLA2. Figure 5 ) and PR2 (see Figure 5 )overlapping.
[0129] In addition, according to an embodiment, a passivation layer TL3 may be located between the color filters CF1, CF2, and CF3 and the filling layer FL. The passivation layer TL3 may include an organic insulating material or an inorganic insulating material.
[0130] refer to Figure 6B The display device according to the embodiment may have a stack structure of a first substrate SUB1 to an encapsulation layer ENC, Figure 6A The stacking structure is the same.
[0131] In addition, the display device according to the embodiment includes a second substrate SUB2 that overlaps with the first substrate SUB1. The second substrate SUB2 may include a flexible material such as plastic that can be easily bent, folded, or curled. The first color filter CF1, the second color filter CF2, and the third color filter CF3 may be disposed on a side of the second substrate SUB2 that faces the first substrate SUB1. The first color filter CF1 may overlap the first color conversion layer CCL1. The second color filter CF2 may overlap the second color conversion layer CCL2. The third color filter CF3 may overlap the first transmission layer TM1 and the second transmission layer TM2. At least two of the third color filter CF3, the second color filter CF2, and the first color filter CF1 may overlap with each other to serve as a light blocking layer. The overlapping portions of at least two of the color filters CF1, CF2, and CF3 may overlap the spacer MB.
[0132] A passivation layer TL3 may be disposed on the first, second, and third color filters CF1, CF2, and CF3. The above-described spacers MB, the first and second color conversion layers CCL1, CCL2, and the transmissive layers TM1 and TM2 may be disposed on the passivation layer TL3.
[0133] A filling layer FL may be disposed on the spacer MB, the first and second color conversion layers CCL1 and CCL2, and the transmissive layers TM1 and TM2. The filling layer FL may combine components disposed on the first substrate SUB1 with components disposed on the second substrate SUB2. A display panel may be formed by the filling layer FL.
[0134] In the following, reference will be made to Figures 7 to 10 A method of manufacturing a display device according to an embodiment is described. Figure 7 、 Figure 8 、 Figure 9 and Figure 10 1 is a cross-sectional view of a method of manufacturing a display device according to an embodiment. Descriptions of at least some components that are the same as those described above are omitted.
[0135] refer to Figure 5 and Figure 7 A first transmission layer TM1 and a second transmission layer TM2 are formed on the display unit DC manufactured according to the embodiment using a photosensitive resin composition. During the process of forming the first transmission layer TM1 and the second transmission layer TM2, first pattern layers PR1 and second pattern layers PR2 disposed in the non-emission areas NLA1 and NLA2 may also be formed.
[0136] Then, if Figure 8 As shown in , the metal layer ML is deposited to overlap the entire surface of the display cell DC.
[0137] Afterwards, if Figure 9 As shown in FIG, an anisotropic etching process is performed on the metal layer ML to form spacers MB covering side surfaces of the first and second transmitting layers TM1 and TM2.
[0138] Next, if Figure 10 As shown in FIG, the first and second color conversion layers CCL1 and CCL2 are formed by an inkjet process. According to an embodiment, a spacer MB and transmissive layers TM1 and TM2 are formed between the first and second color conversion layers CCL1 and CCL2 manufactured by the inkjet process, thereby ensuring a sufficient process margin. Therefore, the first and second color conversion layers CCL1 and CCL2 can be stably formed without color mixing.
[0139] In the following, reference will be made to Figures 11 to 16 A display device according to an embodiment is described. Figure 11 is a cross-sectional view of a partial region of a display panel according to an embodiment, and Figure 12 、 Figure 13 、 Figure 14 、 Figure 15 and Figure 16 is a plan view of a partial area of a display panel according to an embodiment.
[0140] Descriptions of at least some components that are the same as those described above are omitted.
[0141] refer to Figure 11 , the spacer MB according to the embodiment may define a first opening OP1, a second opening OP2, a third opening OP3, and a fourth opening OP4. The first color conversion layer CCL1 may be disposed in the first opening OP1, and the second color conversion layer CCL2 may be disposed in the second opening OP2. The first transmission layer TM1 may be disposed in the third opening OP3, and the third pattern layer PR3 may be disposed in the fourth opening OP4. The first transmission layer TM1 and the third pattern layer PR3 may be formed in the same process and may include the same material. However, the transistor and the light-emitting element may be disposed at the bottom of the first transmission layer TM1, and the transistor and the light-emitting element may not be disposed at the bottom of the third pattern layer PR3. Blue light may be emitted from the first transmission layer TM1, and no light is emitted from the third pattern layer PR3.
[0142] refer to Figure 12 , the third pixel PX3, the first pixel PX1, the third non-emission area NLA3 and the second pixel PX2 may be arranged along the first direction DR1. That is, referring to Figure 11, the transmission layer TM1, the first color conversion layer CCL1, the pattern layer PR3 and the second color conversion layer CCL2 may be arranged in this order. The third pixel PX3, the first pixel PX1, the third non-luminous area NLA3 and the second pixel PX2 may be separated by the partition MB. In the second direction DR2, the first non-luminous area NLA1 may be disposed at the upper portion of the third pixel PX3, the first pixel PX1, the third non-luminous area NLA3 and the second pixel PX2, and the second non-luminous area NLA2 may be disposed at the bottom portion of the third pixel PX3, the first pixel PX1, the third non-luminous area NLA3 and the second pixel PX2. However, this is not limited to these embodiments, and as Figure 13 As shown in FIG, the spacers disposed between the first to third non-emission areas NLA1, NLA2, and NLA3 may be removed.
[0143] according to Figure 13 In an embodiment, a spacer MB may be provided to surround the first pixel PX1, the second pixel PX2, and the third pixel PX3.
[0144] Alternatively, as Figure 14 As shown in , the partitions disposed between the first non-emission area NLA1, the second non-emission area NLA2, and the third pixel PX3 may be removed. Figure 14 In an embodiment, a spacer MB may be provided to surround the first pixel PX1, the second pixel PX2, and the third non-emission area NLA3.
[0145] refer to Figure 15 The spacer MB may have a shape surrounding the first pixel PX1, the second pixel PX2, and the third pixel PX3. Each of the first pixel PX1 and the second pixel PX2 may have a polygonal shape, and the first pixel PX1 and the second pixel PX2 may have a symmetrical shape.
[0146] Alternatively, as Figure 16 As shown in FIG, the spacer MB may have a shape surrounding the first pixel PX1 and the second pixel PX2. The spacer MB may not be disposed between the first non-emission area NLA1, the second non-emission area NLA2, the third non-emission area NLA3, and the third pixel PX3.
[0147] In the following, reference will be made to Figures 17 to 20 A display device according to an embodiment is described. Figure 17 is a cross-sectional view of a partial region of a display panel according to an embodiment, and Figure 18 、 Figure 19 and Figure 20 is a plan view of a partial area of a display panel according to an embodiment.
[0148] refer to Figure 17A first transmission layer TM1, a first color conversion layer CCL1, and a second transmission layer TM2 may be provided on the display unit DC. A spacer MB may be provided between the first transmission layer TM1 and the first color conversion layer CCL1, between the first color conversion layer CCL1 and the second transmission layer TM2, and between the first transmission layer TM1 and the second transmission layer TM2. Red light is emitted from a first pixel PX1 overlapping with the first color conversion layer CCL1, blue light is emitted from a third pixel PX3 overlapping with the first transmission layer TM1, and green light is emitted from a second pixel PX2 overlapping with the second transmission layer TM2.
[0149] like Figure 17 and Figure 18 As shown in FIG, the area where the first transmission layer TM1 is provided corresponds to the third pixel PX3, the area where the first color conversion layer CCL1 is provided corresponds to the first pixel PX1, and the area where the transmission layer TM2 is provided may correspond to the second pixel PX2. The third pixel PX3, the first pixel PX1, and the second pixel PX2 may be repeatedly arranged along the first direction DR1. The spacer MB may have a shape surrounding the first pixel PX1, the second pixel PX2, and the third pixel PX3.
[0150] Alternatively, as Figure 19 As shown in FIG, the spacer MB may have a shape removed between the first non-emission area NLA1, the second non-emission area NLA2, and the third pixel PX3.
[0151] Alternatively, as Figure 20 As shown in FIG, the spacer MB may have a shape removed between the first non-emission area NLA1, the second non-emission area NLA2, and the second pixel PX2.
[0152] In the following, reference will be made to Figures 21 to 27 A display device according to an embodiment is described.
[0153] Figure 21 and Figure 22 is a plan view of a partial area of a display panel according to an embodiment, and Figure 23 、 Figure 24 、 Figure 25 、 Figure 26 and Figure 27 Each is a cross-sectional view of a partial region of a display panel according to an embodiment. Descriptions of at least some components that are the same as those described above are omitted.
[0154] refer to Figure 21 , each of the first and second non-emission areas NLA1 and NLA2 may further include a light blocking layer disposed on the same layer as the pattern layer of the third pixel PX3 .
[0155] Alternatively, as Figure 22As shown in FIG, the third non-emission area NLA3 may further include a light blocking layer disposed on the same layer as the pattern layer of the third pixel PX3.
[0156] refer to Figure 23 According to an embodiment, each of the second transmission layer TM2 and the pattern layers PR1 and PR2 may have a tapered shape. The width of the spacer MB located between the second transmission layer TM2 and the pattern layers PR1 and PR2 may increase toward the upper surface of the transmission layer TM2. Alternatively, the cross-sectional thickness W of the spacer MB may decrease toward the display unit DC.
[0157] refer to Figure 24 , the width of the second transmission layer TM2 according to the embodiment may become wider toward the display unit DC. In contrast to the second transmission layer TM2, the widths of the pattern layers PR1 and PR2 may become smaller toward the display unit DC. The spacers MB disposed between the pattern layers PR1 and PR2 and the second transmission layer TM2 may be provided with the same thickness.
[0158] refer to Figure 25 , the width of the second transmission layer TM2 according to the embodiment may become smaller toward the display unit DC. In contrast to the second transmission layer TM2, the width of the pattern layers PR1 and PR2 may increase toward the display unit DC. The spacers MB disposed between the pattern layers PR1 and PR2 and the second transmission layer TM2 may be provided with the same thickness.
[0159] refer to Figure 26 , the second transmission layer TM2 according to the embodiment may have substantially the same width in the cross section. The width of the pattern layers PR1 and PR2 may increase toward the display unit DC in the cross section. The width of the spacer MB disposed between the pattern layers PR1 and PR2 and the transmission layer TM2 may decrease toward the display unit DC in the cross section. Figure 27 , the spacer MB according to an embodiment may include a recessed portion d (or a recessed part). The upper surface of the spacer MB may have a recessed shape toward the display cell DC.
[0160] While the present disclosure has been described with reference to the embodiments thereof, it will be apparent to one skilled in the art that various changes and modifications can be made without departing from the scope and spirit of the disclosure as set forth in the appended claims.
Claims
1. A display device, characterized in that: The display device includes: substrate; a transistor, disposed on the substrate; a light emitting element electrically connected to the transistor; an encapsulation layer, disposed on the light-emitting element; a spacer disposed on the encapsulation layer and defining a first opening, a second opening, and a third opening; a first color conversion layer, disposed in the first opening; a second color conversion layer disposed in the second opening; and a transmission layer, disposed in the third opening, Wherein, the separator is made of metal, and A distance from a center of a portion of the partition to the first color conversion layer is equal to a distance from the center of the portion of the partition to the transmission layer.
2. The display device according to claim 1, wherein The separator is a single layer.
3. The display device according to claim 1, wherein The transmission layer, the first color conversion layer, the transmission layer, and the second color conversion layer are repeatedly disposed along a first direction.
4. The display device according to claim 1, wherein An upper surface of the transmission layer is disposed at a higher level than an upper surface of the first color conversion layer.
5. The display device according to claim 1, wherein The spacer has a thickness in a range of 0.1 micrometers to 5 micrometers, inclusive.
6. The display device according to claim 1, wherein The display device includes: a pattern layer spaced apart from the light-emitting element; and The pattern layer and the transmission layer include the same material.
7. The display device according to claim 6, wherein: The pattern layer is disposed between the first color conversion layer and the second color conversion layer along a first direction.
8. The display device according to claim 1, wherein The display device further includes: The light blocking layer is provided on the same layer as the partition.
9. The display device according to claim 1, wherein The thickness of the separator decreases toward the base.
10. The display device according to claim 1, wherein The upper surface of the partition includes a recessed portion.