Wafer contour measuring mechanism

Abstract

The utility model relates to the wafer detection field, and discloses a wafer contour measuring mechanism comprising a detection platform, the detection platform is provided with an edge measuring assembly, a notch measuring assembly, a diameter measuring assembly, a thickness measuring assembly and a driving assembly, the driving assembly comprises a driving motor, a slide rail module and a measuring base plate; the edge measuring assembly comprises a first camera mechanism and a first light source mechanism; the notch measuring assembly comprises a second camera mechanism, a second light source mechanism and a first displacement table; the diameter measuring assembly comprises a light source emitting mechanism, a light source receiving mechanism and a second displacement table; the thickness measuring assembly comprises a first sensing mechanism, a second sensing mechanism and a third displacement table; according to the utility model, a plurality of measuring assemblies are integrated together, so that the wafer detection efficiency and accuracy are improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to wafer detection field especially relates to a wafer profile measurement mechanism. BACKGROUND

[0002] Wafer detection is a very important link in semiconductor production process, through the detection of wafer profile edge, thickness and diameter and multiple parameters, can judge whether the wafer meets the requirement of product, improve the efficiency and yield of wafer production, need to detect the wafer in the detection link multidimensional multi -aspect.

[0003] But in the prior art, the multiple detection equipment for detecting different parameter sizes of wafer are often set separately, and are not set together, not only the space utilization is low, but also increases the flow process of wafer in different detection procedures, reduces the efficiency of wafer detection, when wafer shifts between different detection procedures, also easy to appear knock damage, increases the risk of wafer in the detection transfer process. UTILITY MODEL CONTENT

[0004] The utility model solves the technical problem that how improves wafer detection efficiency, in order to solve the above technical problem, the utility model provides a wafer profile measurement mechanism, including detection platform and two two perpendicular intersection first direction, second direction and third direction, the detection platform is equipped with edge measurement subassembly, notch measurement subassembly, diameter measurement subassembly, thickness measurement subassembly and drive assembly:

[0005] The drive assembly includes drive motor, slide rail module and measurement base plate, the slide rail module is along first direction and is arranged in detection platform, the drive motor is connected with measurement base plate and drives measurement base plate moves along slide rail module;

[0006] The edge measurement subassembly includes first camera mechanism and first light source mechanism, the first camera mechanism with first light source mechanism is opposite and is arranged along first direction, and all along second direction and is arranged in the detection platform of slide rail module side;

[0007] The notch measurement subassembly includes second camera mechanism, second light source mechanism and first displacement table, the first displacement table is fixed on the measurement base plate, the second light source mechanism and the second camera mechanism are opposite and are arranged along third direction, and all along third direction and are arranged in the side of first displacement table close to the edge measurement subassembly;

[0008] The diameter measuring assembly comprises a light source emitting mechanism, a light source receiving mechanism and a second displacement table, the second displacement table is fixed to the measuring base plate, the light source receiving mechanism and the light source emitting mechanism are oppositely arranged along the third direction and are both slidingly arranged on the side of the second displacement table close to the edge measuring assembly along the third direction.

[0009] The thickness measuring assembly comprises a first sensing mechanism, a second sensing mechanism and a third displacement table, the third displacement table is fixed to the measuring base plate, the second sensing mechanism and the first sensing mechanism are oppositely arranged along the third direction and are both slidingly arranged on the side of the third displacement table close to the edge measuring assembly along the third direction.

[0010] Preferably, the first light source mechanism comprises a first stand, a first adjusting table and a first light source component, the first stand is connected to the detection platform and the first adjusting table on both sides along the third direction, the first adjusting table is connected with the first light source component at the end away from the first stand, the first adjusting table is used to adjust the absolute position of the first light source component in the first direction, the second direction and the third direction, and the first light source component is used to emit light along the first direction to penetrate the profile surface of the wafer to the first camera mechanism.

[0011] Preferably, the first camera mechanism comprises a second stand, a second adjusting table and a first camera component, the second stand is connected to the detection platform and the second adjusting table on both sides along the third direction, the second adjusting table is connected with the first camera component at the end away from the second stand, the second adjusting table is used to adjust the absolute position of the first camera component in the first direction, the second direction and the third direction, and the axis of the first camera component coincides with the axis of the first light source component.

[0012] Preferably, the first camera component comprises a fixed shaft, an adjusting ring and a camera piece, the fixed shaft is fixedly connected with the second adjusting table, the adjusting ring is coaxially rotatably connected with the fixed shaft, and the camera piece is fixedly connected with the adjusting ring, and the fixed shaft is parallel to the second direction.

[0013] Preferably, the first adjusting table and the second adjusting table are both manual three-axis adjusting platforms.

[0014] Preferably, the second light source mechanism comprises a first sliding block and a light source seat fixedly connected, and the second camera mechanism comprises a second sliding block and a second camera component fixedly connected, and the first sliding block and the second sliding block are both slidingly connected with the first displacement table.

[0015] The light source seat is opposite to the second camera component, and the light source seat is embedded with a second light source component for emitting light to the second camera component in a third direction.

[0016] Preferably, the light source emitting mechanism comprises a third sliding block and a third light source component, and the light source receiving mechanism comprises a fourth sliding block and a light source receiving component, and the third sliding block and the fourth sliding block are both in sliding connection with the second displacement table.

[0017] The third light source component is opposite to the light source receiving component, and the third light source component is used for emitting light to the light source receiving component in a third direction.

[0018] Preferably, the light source emitting mechanism comprises a connecting plate, and a third sensor is arranged on the top of the connecting plate, and the third sensor is used for emitting light to the wafer in a third direction.

[0019] Preferably, the first sensing mechanism comprises a fifth sliding block and a first sensor, the second sensing mechanism comprises a sixth sliding block and a second sensor, the fifth sliding block and the sixth sliding block are both in sliding connection with the third displacement table, and the first sensor and the second sensor are coaxially arranged opposite to each other.

[0020] Preferably, the driving assembly comprises a third stand, a fixed bottom plate and a drag chain structure, the third stand is connected with the detection platform and the fixed bottom plate respectively on two sides in a third direction, the fixed bottom plate is fixedly connected with the slide rail module and the driving motor on a side away from the third stand, and one end of the drag chain structure is fixedly connected with the third stand, and the other end is fixedly connected with the measurement bottom plate.

[0021] Compared with the prior art, the wafer profile measurement mechanism provided in the embodiment of the utility model has the beneficial effects that:

[0022] In the utility model, the edge measurement assembly, the notch measurement assembly, the diameter measurement assembly and the thickness measurement assembly are centrally arranged, the edge measurement assembly is fixed on the detection platform, the driving assembly can simultaneously adjust and move the positions of the notch measurement assembly, the diameter measurement assembly and the thickness measurement assembly along the third direction through the measurement base plate, when the wafer is detected, the wafer is horizontally placed between the first camera mechanism and the first light source mechanism, the edge measurement assembly can detect the state of the wafer profile edge, and since each component in the notch measurement assembly, the diameter measurement assembly and the thickness measurement assembly is arranged on the side towards the edge measurement assembly, when the wafer edge profile is measured, the notch measurement assembly, the diameter measurement assembly and the thickness measurement assembly can also simultaneously detect the notch, the thickness and the diameter of the wafer, the detection efficiency of the wafer is greatly improved, the detection instability caused by the wafer transfer in each detection process is avoided, and the problem of low detection accuracy is solved. BRIEF DESCRIPTION OF DRAWINGS

[0023] Figure 1 is the perspective view of the utility model;

[0024] Figure 2 is another perspective view of the utility model;

[0025] Figure 3 is the structure view of the first light source mechanism of the utility model;

[0026] Figure 4 is the structure schematic view of the first camera mechanism of the utility model;

[0027] Figure 5 is another structure schematic view of the first camera mechanism of the utility model;

[0028] Figure 6 is the structure schematic view of the notch measurement assembly of the utility model;

[0029] Figure 7 is the structure schematic view of the diameter measurement assembly of the utility model;

[0030] Figure 8 is the structure schematic view of the thickness measurement assembly of the utility model.

[0031] In the drawing: 1, detection platform;

[0032] 2, edge measurement assembly; 21, first camera mechanism; 211, second stand; 212, second adjusting table; 213, first camera component; 2131, fixed shaft; 2132, adjusting ring; 2133, camera piece; 22, first light source mechanism; 221, first stand; 222, first adjusting table; 223, first light source component;

[0033] 3. Notch measurement assembly; 31. Second camera mechanism; 311. Second slider; 312. Second camera component; 32. Second light source mechanism; 321. First slider; 322. Light source holder; 323. Second light source component; 33. First translation stage;

[0034] 4. Diameter measurement assembly; 41. Light source emitting mechanism; 411. Third slider; 412. Third light source component; 42. Light source receiving mechanism; 421. Fourth slider; 422. Light source receiving component; 43. Second translation stage; 44. Third sensor;

[0035] 5. Thickness measurement assembly; 51. First sensing mechanism; 511. Fifth slider; 512. First sensor; 52. Second sensing mechanism; 521. Sixth slider; 522. Second sensor; 53. Third translation stage;

[0036] 6. Drive assembly; 61. Drive motor; 62. Slide rail module; 63. Measuring base plate; 64. Third column; 65. Fixed base plate; 66. Drag chain structure. DETAILED DESCRIPTION

[0037] The following embodiments are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0038] like Figures 1 to 2 As shown, the preferred embodiment of the present invention provides a wafer profile measurement mechanism, which includes a detection platform 1 and a first direction, a second direction, and a third direction that intersect perpendicularly in pairs. The detection platform 1 is provided with an edge measurement component 2, a notch measurement component 3, a diameter measurement component 4, a thickness measurement component 5, and a drive component 6:

[0039] The drive assembly 6 includes a drive motor 61, a slide rail module 62, and a measuring base plate 63. The slide rail module 62 extends along a first direction and is arranged on the detection platform 1. The drive motor 61 is connected to the measuring base plate 63 and drives the measuring base plate 63 to move along the slide rail module 62.

[0040] The edge measurement assembly 2 includes a first camera mechanism 21 and a first light source mechanism 22. The first camera mechanism 21 and the first light source mechanism 22 are arranged opposite to each other along a first direction and are both arranged along a second direction on the detection platform 1 on one side of the slide module 62.

[0041] The notch measurement assembly 3 includes a second camera mechanism 31, a second light source mechanism 32, and a first translation stage 33. The first translation stage 33 is fixed to the measurement base plate 63. The second light source mechanism 32 and the second camera mechanism 31 are arranged opposite each other along a third direction and are both slidably disposed along the third direction on a side of the first translation stage 33 near the edge measurement assembly 2.

[0042] The diameter measurement assembly 4 comprises a light source emitting mechanism 41, a light source receiving mechanism 42, and a second displacement table 43 fixed to the measurement base plate 63, the light source receiving mechanism 42 and the light source emitting mechanism 41 are oppositely arranged along the third direction and are both slidingly arranged on the side of the second displacement table 43 close to the edge measurement assembly 2 along the third direction;

[0043] The thickness measurement assembly 5 comprises a first sensing mechanism 51, a second sensing mechanism 52, and a third displacement table 53 fixed to the measurement base plate 63, the second sensing mechanism 52 and the first sensing mechanism 51 are oppositely arranged along the third direction and are both slidingly arranged on the side of the third displacement table 53 close to the edge measurement assembly 2 along the third direction.

[0044] Specifically, in the prior art, multiple parameter sizes of the wafer need to be detected, and the devices used for detection are separately arranged, and the detection processes are also separately and independently performed. After the completion of the previous detection process, the next detection process is performed. In the entire detection process, not only the space occupied by the device is large, but also the detection efficiency is low, which does not meet the growing detection demand. In the present embodiment, first, the various detection mechanisms are arranged together, the edge measurement assembly 2 is arranged on one side of the slide rail module 62, and the notch measurement assembly 3, the diameter measurement assembly 4, and the thickness measurement assembly 5 are fixed on the measurement base plate 63 and are all arranged towards the edge measurement assembly 2. When the wafer moves to the detection station between the first camera mechanism 21 and the first light source mechanism 22 for detection, the notch measurement assembly 3, the diameter measurement assembly 4, and the thickness measurement assembly 5 can simultaneously detect other parameters of the wafer. Not only is the time spent for wafer detection greatly shortened, but also the step of wafer flowing back and forth between different detection processes in the traditional scheme is avoided, further saving the wafer detection time. In addition, the problems of unstable position, unstable detection, and low detection accuracy caused by wafer flowing between different detection processes are also avoided.

[0045] In the actual detection process of the embodiment, when the wafer reaches the detection station, the first light source mechanism 22 can emit light to penetrate the profile surface of the wafer to the first camera mechanism 21, and the first camera mechanism 21 can detect the state of the edge profile surface of the wafer according to the received light signal; at the same time, the second light source mechanism 32 in the slot measurement assembly 3 emits light to the second camera mechanism 31 along the third direction, and the second camera mechanism 31 can detect the orientation, position and state of the slot on the wafer after receiving the light signal passing through the slot on the wafer; similarly, the light source emission mechanism 41 in the diameter measurement assembly 4 emits light to the light source receiving mechanism 42, and the diameter size of the wafer is accurately detected through the change of the light signal received by the light source receiving mechanism 42; and in the thickness measurement assembly 5, the first sensing mechanism 51 and the second sensing mechanism 52 are arranged on the two sides of the wafer along the third direction, and the thickness of the wafer can be detected through the signal difference between the two sensing mechanisms.

[0046] Particularly, the slot measurement assembly 3, the diameter measurement assembly 4 and the thickness measurement assembly 5 are arranged on the measurement base plate 63, and the measurement base plate 63 is in sliding connection with the sliding rail module 62, so that the slot measurement assembly 3, the diameter measurement assembly 4 and the thickness measurement assembly 5 can be driven by the driving motor 61 to move along the third direction through the measurement base plate 63, thereby switching different measurement assemblies to detect the wafer or completing the detection of the wafer, so that the whole detection process is more convenient and efficient.

[0047] It should be further pointed out that in the drawings of the utility model, the first direction is X, the second direction is Y, and the third direction is Z.

[0048] As shown in Figure 3 some embodiments, the first light source mechanism 22 includes a first stand 221, a first adjusting table 222 and a first light source component 223, the first stand 221 is connected with the detection platform 1 and the first adjusting table 222 respectively on the two sides of the third direction, the first adjusting table 222 is connected with the first light source component 223 at the end away from the first stand 221, the first adjusting table 222 is used for adjusting the absolute position of the first light source component 223 in the first direction, the second direction and the third direction, and the first light source component 223 is used for emitting light along the first direction to penetrate the profile surface of the wafer to the first camera mechanism 21.

[0049] Further, the first camera mechanism 21 comprises a second column 211, a second adjusting table 212 and a first camera component 213, the second column 211 is connected with the detection platform 1 and the second adjusting table 212 respectively along two sides of the third direction, the second adjusting table 212 is connected with the first camera component 213 at an end away from the second column 211, the second adjusting table 212 is used for adjusting the absolute position of the first camera component 213 in the first direction, the second direction and the third direction, and the axis of the first camera component 213 coincides with the axis of the first light source component 223.

[0050] Specifically, in the actual wafer edge profile measurement process, the positions of the first light source component 223 and the first camera component 213 need to be adjusted first, so that the central axes of the first light source component 223 and the first camera component 213 coincide, so that the light signal emitted by the first light source component 223 can be better transmitted to the first camera component 213, thereby completing the detection of the wafer edge profile. In this process, the position of the first light source component 223 is adjusted by the first adjusting table 222, and the first camera component 213 is adjusted by the second adjusting table 212. The first adjusting table 222 and the second adjusting table 212 respectively adjust the positions of the first light source component 223 and the first camera component 213 in three directions, which has higher adjustment accuracy and can better control the relative arrangement of the first light source component 223 and the first camera component 213, thereby improving the precision and accuracy of wafer detection. Among them, the middle of the first light source component 223 and the first camera component 213 is a wafer detection station, and the wafer is horizontally placed in the detection station. The central axis of the wafer coincides with the third direction.

[0051] As Figures 4 to 5 In some embodiments, the first camera component 213 comprises a fixed shaft 2131, an adjusting ring 2132 and a camera piece 2133, the fixed shaft 2131 is fixedly connected with the second adjusting table 212, the adjusting ring 2132 is coaxially rotatably connected with the fixed shaft 2131, and the camera piece 2133 is fixedly connected with the adjusting ring 2132. The fixed shaft 2131 is parallel to the second direction. Specifically, in this embodiment, the camera piece 2133 in the first camera component 213 can be rotated around the fixed shaft 2131 through the action of the adjusting ring 2132, so that the shooting range of the camera piece 2133 changes. Combined with the action of the second adjusting table 212, the camera piece 2133 can obtain more information of the wafer surface, so as to complete the detection of the wafer surface state. The rotation of the camera piece 2133 also enables better fine adjustment of the orientation of the camera piece 2133 in the detection of the wafer edge profile, so as to better align the first light source component 223 and realize more accurate wafer detection.

[0052] In some embodiments, the first adjusting table 222 and the second adjusting table 212 are both manual three-axis adjusting tables. The first adjusting table 222 and the second adjusting table 212 each include an X-axis adjusting member, a Y-axis adjusting member, and a Z-axis adjusting member, and the position of the first light source member 223 or the first camera member 213 can be adjusted by the three adjusting members. It should be noted that the height position of each adjusting member in the first adjusting table 222 and the second adjusting table 212 is adjusted by a lead screw or the like. In other embodiments, other adjusting structures can also be used.

[0053] As shown in FIG. 2, Figure 6 In some embodiments, the second light source mechanism 32 includes a first sliding block 321 and a light source seat 322 fixedly connected, and the second camera mechanism 31 includes a second sliding block 311 and a second camera member 312 fixedly connected. The first sliding block 321 and the second sliding block 311 are both in sliding connection with the first displacement table 33.

[0054] The light source seat 322 is arranged opposite to the second camera member 312, and the light source seat 322 is embedded with a second light source member 323. The second light source member 323 is used to emit light along a third direction to penetrate the wafer to the second camera member 312.

[0055] Specifically, in the production process of the wafer, a groove is arranged on the wafer. The groove is in a V-shaped or U-shaped structure, which can be used to position the wafer and determine the direction of the wafer. In the process of detecting the groove of the wafer, the light source seat 322 is arranged below the second camera member 312. The light source seat 322 is in a U-shaped structure, and a square second light source member 323 is embedded in the light source seat 322. The second light source member 323 emits light along a third direction, and the light passes through the groove to enter the second camera member 312. By detecting the change of the light signal, the state and size of the wafer groove can be detected, and it can be judged whether it meets the requirements. In the actual detection process, the positions of the light source seat 322 and the second camera member 312 can be adjusted by the first sliding block 321 and the second sliding block 311 according to the detection needs, so as to adapt to the detection needs of more different sizes of wafers.

[0056] As shown in FIG. 4, Figure 7 In some embodiments, the light source emitting mechanism 41 includes a third sliding block 411 and a third light source member 412, and the light source receiving mechanism 42 includes a fourth sliding block 421 and a light source receiving member 422. The third sliding block 411 and the fourth sliding block 421 are both in sliding connection with the second displacement table 43.

[0057] The third light source member 412 is arranged opposite to the light source receiving member 422, and the third light source member 412 is used to emit light in a third direction to penetrate the wafer to the light source receiving member 422.

[0058] Specifically, in the diameter detection process of the wafer, it is necessary to scan to confirm the size of the wafer, so in this embodiment, the third light source component 412 emits a strip of light, and by driving the motor 61 to move the relative position of the diameter measurement assembly 4 and the wafer to be measured, the light emitted by the third light source component 412 can be scanned from one side of the wafer to the other side, and then by monitoring the change of the light signal received by the light source receiving component 422, the diameter size of the wafer to be measured is detected, and the whole detection process is more efficient.

[0059] In some embodiments, the light source emitting mechanism 41 includes a connecting plate, and the top of the connecting plate is provided with a third sensor 44 for emitting light in a third direction to the wafer. The third sensor 44 can emit and receive reflected detection light, thereby assisting the light source receiving component 422 to confirm its position relative to the wafer to be measured, so that the third light source component 412 and the light source receiving component 422 can better cooperate and more accurately detect the diameter size of the wafer to be measured.

[0060] As shown in Figure 8 In some embodiments, the first sensing mechanism 51 includes a fifth sliding block 511 and a first sensor 512, and the second sensing mechanism 52 includes a sixth sliding block 521 and a second sensor 522, both the fifth sliding block 511 and the sixth sliding block 521 are in sliding connection with the third displacement table 53, and the first sensor 512 and the second sensor 522 are coaxially arranged opposite to each other. The detection of the wafer thickness in the prior art mainly includes white light interferometer, ray fluorescence method, laser displacement sensor, and spectral confocal displacement sensor, etc., and the wafer thickness can be detected by various optical sensors, which can avoid contact with the wafer and will not cause damage to the wafer, and the measurement accuracy is also higher, therefore, the specific detection technology of the wafer thickness is relatively mature, and the specific principle of the first sensor 512 and the second sensor 522 is not described here.

[0061] In some embodiments, the driving assembly 6 includes a third column 64, a fixed bottom plate 65, and a drag chain structure 66. The third column 64 is connected to the detection platform 1 and the fixed bottom plate 65 on both sides of the third direction, respectively. The fixed bottom plate 65 is fixedly connected to the slide rail module 62 and the driving motor 61 away from the third column 64. One end of the drag chain structure 66 is fixedly connected to the third column 64, and the other end is fixedly connected to the measurement bottom plate 63. Specifically, in this embodiment, the slide rail module 62 is suspended above the detection platform 1 by the third column 64 and the fixed bottom plate 65, providing space for the movement of the notch measurement assembly 3, the diameter measurement assembly 4, and the thickness measurement assembly 5, facilitating subsequent detection of wafers of different sizes, and improving detection efficiency. The driving motor 61 drives the sliding block to move through the screw structure. The sliding block is fixedly connected to the measurement bottom plate 63, thereby driving the measurement bottom plate 63 to move in the first direction. The drag chain structure 66 is used to standardize and guide the movement of the measurement bottom plate 63, making the movement of the measurement bottom plate 63 more smooth.

[0062] In summary, the wafer profile measurement mechanism provided by the embodiments of the present application can concentrate the edge measurement assembly 2, the notch measurement assembly 3, the diameter measurement assembly 4, and the thickness measurement assembly 5 together, improving the space utilization of the wafer detection equipment. When detecting the wafer, the wafer is horizontally placed between the first camera mechanism 21 and the first light source mechanism 22. The edge measurement assembly 2 can detect the state of the wafer profile edge. At the same time, since each component in the notch measurement assembly 3, the diameter measurement assembly 4, and the thickness measurement assembly 5 is arranged on the side facing the edge measurement assembly 2, the notch measurement assembly 3, the diameter measurement assembly 4, and the thickness measurement assembly 5 can also detect the notch, thickness, and diameter of the wafer when measuring the wafer edge profile, greatly improving the detection efficiency of the wafer and avoiding the instability and low accuracy of the detection caused by the transfer of the wafer in each detection process.

[0063] The above is only the preferred embodiment of the present application. It should be noted that for ordinary skilled persons in the technical field, without departing from the technical principles of the present application, several improvements and substitutions can be made, which should also be considered as the protection scope of the present application.

Claims

1. A wafer profile measuring mechanism comprising a detection stage and first, second and third directions which are each orthogonal to the other two, characterized by, The detection platform is provided with an edge measurement assembly, a notch measurement assembly, a diameter measurement assembly, a thickness measurement assembly and a driving assembly. The driving assembly comprises a driving motor, a slide rail module and a measurement base plate, the slide rail module is arranged on the detection platform along a first direction, the driving motor is connected with the measurement base plate and drives the measurement base plate to move along the slide rail module. The edge measurement assembly comprises a first camera mechanism and a first light source mechanism, the first camera mechanism and the first light source mechanism are oppositely arranged along a first direction and are arranged on the detection platform on one side of the slide rail module along a second direction. The notch measurement assembly comprises a second camera mechanism, a second light source mechanism and a first displacement table, the first displacement table is fixed on the measurement base plate, the second light source mechanism and the second camera mechanism are oppositely arranged along a third direction and are slidably arranged on the side of the first displacement table close to the edge measurement assembly along the third direction. The diameter measurement assembly comprises a light source emitting mechanism, a light source receiving mechanism and a second displacement table, the second displacement table is fixed on the measurement base plate, the light source receiving mechanism and the light source emitting mechanism are oppositely arranged along the third direction and are slidably arranged on the side of the second displacement table close to the edge measurement assembly along the third direction. The thickness measurement assembly comprises a first sensing mechanism, a second sensing mechanism and a third displacement table, the third displacement table is fixed on the measurement base plate, the second sensing mechanism and the first sensing mechanism are oppositely arranged along the third direction and are slidably arranged on the side of the third displacement table close to the edge measurement assembly along the third direction.

2. The wafer profilometry mechanism of claim 1, wherein, The first light source mechanism comprises a first stand, a first adjusting table and a first light source part, the first stand is connected with the detection platform and the first adjusting table on both sides along the third direction, the first adjusting table is connected with the first light source part at the end away from the first stand, the first adjusting table is used for adjusting the absolute position of the first light source part in the first direction, the second direction and the third direction, and the first light source part is used for emitting light along the first direction to penetrate the profile surface of the wafer to the first camera mechanism.

3. The wafer profilometry mechanism of claim 2, wherein, The first camera mechanism comprises a second stand, a second adjusting table and a first camera part, the second stand is connected with the detection platform and the second adjusting table on both sides along the third direction, the second adjusting table is connected with the first camera part at the end away from the second stand, the second adjusting table is used for adjusting the absolute position of the first camera part in the first direction, the second direction and the third direction, and the axis of the first camera part coincides with the axis of the first light source part.

4. The wafer profilometer mechanism of claim 3, wherein, The first camera part comprises a fixed shaft, an adjusting ring and a camera, the fixed shaft is fixedly connected with the second adjusting table, the adjusting ring is coaxially rotationally connected with the fixed shaft, and the camera is fixedly connected with the adjusting ring, and the fixed shaft is parallel to the second direction.

5. The wafer profilometer mechanism of claim 3, wherein, The first adjusting table and the second adjusting table are both manual three-axis adjusting platforms.

6. The wafer profilometer mechanism of claim 1, wherein, The second light source mechanism comprises a first slider and a light source seat fixedly connected, and the second camera mechanism comprises a second slider and a second camera component fixedly connected, and the first slider and the second slider are both in sliding connection with the first displacement table; The light source seat is arranged opposite to the second camera component, and the light source seat is embedded with a second light source component for emitting light to penetrate the wafer to the second camera component in a third direction.

7. The wafer profilometer mechanism of claim 1, wherein, The light source emitting mechanism comprises a third slider and a third light source component, and the light source receiving mechanism comprises a fourth slider and a light source receiving component, and the third slider and the fourth slider are both in sliding connection with the second displacement table; The third light source component is arranged opposite to the light source receiving component, and the third light source component is used for emitting light to penetrate the wafer to the light source receiving component in a third direction.

8. The wafer profilometer mechanism of claim 7, wherein, The light source emitting mechanism comprises a connecting plate, and the top of the connecting plate is provided with a third sensor for emitting light to the wafer in a third direction.

9. The wafer profilometer mechanism of claim 1, wherein, The first sensing mechanism comprises a fifth slider and a first sensor, and the second sensing mechanism comprises a sixth slider and a second sensor, and the fifth slider and the sixth slider are both in sliding connection with the third displacement table, and the first sensor and the second sensor are coaxially arranged opposite to each other.

10. The wafer profilometer mechanism of claim 1, wherein, The driving assembly comprises a third stand, a fixed bottom plate and a drag chain structure, the third stand is connected with the detection platform and the fixed bottom plate on both sides along the third direction, the fixed bottom plate is fixedly connected with the slide rail module and the driving motor on the side away from the third stand, and one end of the drag chain structure is fixedly connected with the third stand and the other end is fixedly connected with the measurement bottom plate.

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