Communication optical connection device
By employing XYZ three-dimensional spatial calibration and filling material in the optical communication connection device, the problems of low optical coupling efficiency and insufficient spatial density are solved, thus achieving optical communication connection with high coupling efficiency and high transmission density.
Patent Information
- Application Number
- CN202422428239.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-09
- Publication Date
- 2025-10-31
- Estimated Expiration
- 2034-10-09
AI Technical Summary
Traditional optical communication waveguide connection methods suffer from low optical coupling efficiency and insufficient spatial density. In particular, the air dielectric layer between the optical active element and the waveguide leads to poor optical coupling, making it difficult to achieve high-density array connection.
By calibrating, positioning, and connecting waveguide array units, optical active element array units, and motherboard units in XYZ three-dimensional space, and using a filling material with an optical index greater than that of air to fill the gaps between the units, an optical channel without air gaps is formed. The units are then connected along the X-axis through a one-to-one coupling relationship, forming an optical communication connection device with high coupling efficiency and high transmission density.
This achieves high coupling efficiency and high transmission density between the optical active element and the waveguide, reduces optical reflectivity, reduces noise interference from adjacent optical channels, and improves the overall performance of the optical connection device.
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Figure CN223501202U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to an optical connection device, and more particularly to a communication optical connection device applied in the field of optical communication. Background Technology
[0002] Traditional optical waveguide connections in communication systems involve a sequence of light source, focusing lens, air, and then into the waveguide at the light source end, and a sequence of waveguide, air, and then into the optical receiver at the receiving end. This means there is at least one air dielectric layer between the active optical element and the waveguide. Therefore, this traditional connection method results in a relatively long distance between the active optical element and the waveguide, and the presence of at least one air dielectric layer. This not only reduces the optical coupling efficiency between the active optical element and the waveguide but also hinders the construction of large-scale, high-spatial-density array-type optical connections. Furthermore, prior art related to this invention includes IEEE PHOTONICS TECHNOLOGY LETTERS, VOL.9, NO.2, FEBRUARY 1997, page 253, “A Two-Dimensional Optical Parallel Transmission Using a Vertical-Cavity Surface-Emitting Laser Arreay Module and Image Fiber”, IEEE Photonics Journal Volume 1, Number 1, June 2009, “Pixel-to-Pixel Fiber-coupled Emissive”. While the prior art described above does not reveal the technical features of this invention, this invention proposes a communication optical connection device in the field of communication optical technology that features a robust structure, no adjacent optical channel noise, high spatial density, and a large number of array-type optical connections. Utility Model Content
[0003] The main objective of this invention is to provide a communication optical connection device, which consists of a waveguide array unit with at least one waveguide element, an optical active element array unit with at least one optical active element, and a mother carrier unit with at least one subcarrier board arranged sequentially along the X-axis in a three-dimensional XYZ space. The gaps between the units are filled with a filling material with an optical index greater than that of air. The waveguide elements, optical active elements, and subcarrier boards are connected sequentially along the X-axis through a one-to-one coupling relationship between their optical axes or positioning reference axes to form an optical channel without any air or vacuum gaps. This allows the optical connection device to include at least one optical channel, with each optical channel arranged at intervals on the YZ plane in the XYZ three-dimensional space to form an array, achieving high coupling efficiency and high transmission density.
[0004] To achieve the above objectives, this utility model provides a communication optical connection device, which sequentially includes a waveguide array unit, an optical active element array unit, and a motherboard unit along the X-axis direction in an XYZ three-dimensional space. The units are mutually calibrated, positioned, and connected as a whole. Each waveguide array unit includes at least one waveguide element, and each waveguide element is spaced apart on the YZ plane in the XYZ three-dimensional space to form an array. The optical axis of each waveguide element is parallel to the X-axis direction. A first YZ plane is defined on the surface of each waveguide element facing the optical active element array unit, with the plane closest to the optical active element array unit and perpendicular to the X-axis direction. That is, the first YZ plane is perpendicular to the X-axis direction and each optical axis of each waveguide element. The optical active element array unit includes at least one optical active element, and each optical active element is spaced apart on the YZ plane in the XYZ three-dimensional space to form an array. The optical axis of each optical active element is parallel to the X-axis direction. A second YZ plane is defined on the surface of each active optical element facing the waveguide array unit, the plane closest to the waveguide array unit and perpendicular to the X-axis direction. This second YZ plane is perpendicular to the X-axis direction and to each optical axis of each active optical element. The mother carrier unit includes at least one sub-carrier, and each sub-carrier is arranged in an array on the YZ plane in the XYZ three-dimensional space. Each sub-carrier has a positioning reference axis parallel to the X-axis direction, and each sub-carrier has a first surface and a second surface along the X-axis direction. Each first surface faces and is close to or connected to each active optical element in the active optical array unit, while each second surface is located on the opposite side of each first surface along the X-axis direction. The first YZ plane is parallel to and close to the second YZ plane, and the gap between the first and second YZ planes is filled with a filling material, and the optical index of the filling material is... The index is greater than the optical index of air, so that there is no air gap or vacuum gap between the waveguide array unit and the optical active array unit; wherein each optical axis of each waveguide element in the waveguide array unit is coupled one-to-one to each optical axis of each optical active element in the optical active element array unit and each positioning reference axis of each sub-carrier in the mother carrier unit, so that each waveguide element, each optical active element and each sub-carrier can be sequentially connected along the X-axis to form an optical channel without any air gap or vacuum gap, so that the communication optical connection device includes at least one optical channel and each optical channel is spaced apart on the YZ plane in the XYZ three-dimensional space to form an array.
[0005] In a preferred embodiment of the present invention, the optical index of the filling material is between the optical index of the core of each waveguide element and the optical index of the photoelectric conversion material of each photoactive element, thereby reducing the light reflectivity of each material interface between the core of each waveguide element and the photoelectric conversion material of each photoactive element.
[0006] In a preferred embodiment of this utility model, the filling material includes a gel-like filler or a liquid filler. When the filling material is a gel-like filler, it is used as an adhesive to position and connect the waveguide array unit and the optical active element array unit together after curing. When the filling material is a liquid filler, the periphery of the gap between the waveguide array unit and the optical active element array unit is tightly covered by an outer shell, allowing the liquid filler to flow freely within the gap between the waveguide array unit and the optical active element array unit in the internal space of the outer shell to provide heat dissipation for the optical active element array unit.
[0007] In a preferred embodiment of the present invention, the mother carrier plate unit is made of a non-light-absorbing material.
[0008] In a preferred embodiment of the present invention, each of the second surfaces of each of the sub-carriers in the mother carrier unit is further provided with a focusing mirror. The focusing mirror includes, but is not limited to, a concave mirror, a Fresnel mirror, and a Grating mirror. The optical axis of each focusing mirror is coupled to each of the positioning reference axes of each sub-carrier, each of the optical active elements, and each of the waveguide elements.
[0009] In a preferred embodiment of this invention, a light absorber made of light-absorbing material is provided between two adjacent active light elements, so that each light absorber can absorb light from the adjacent optical channel to avoid crosstalk caused by the light signal of the adjacent optical channel to the signal of the optical channel.
[0010] In a preferred embodiment of the present invention, a light absorber made of light-absorbing material is provided between two adjacent subcarrier plates, so that each light absorber can absorb light from the adjacent optical channel to avoid crosstalk interference from the light signal of the adjacent optical channel to the signal of the optical channel.
[0011] In a preferred embodiment of the present invention, a light absorber made of light-absorbing material is provided between two adjacent waveguide elements, so that each light absorber can absorb light from the adjacent optical channel to avoid crosstalk caused by the light signal in the adjacent optical channel to the signal of the optical channel.
[0012] In a preferred embodiment of the present invention, when each of the photoactive elements in the photoactive element array unit is a light-emitting diode (LED) or a vertical-cavity surface-emitting laser (VCSEL), the communication optical connection device includes at least one optical channel and each optical channel is arranged at intervals on the YZ plane in the XYZ three-dimensional space to form a two-dimensional array.
[0013] In a preferred embodiment of the present invention, when each of the optical active elements in the optical active element array unit is an edge-emitting laser, the communication optical connection device includes at least one optical channel and each optical channel is arranged at intervals on the YZ plane in the XYZ three-dimensional space to form a one-dimensional array.
[0014] In a preferred embodiment of this utility model, the light absorber between two adjacent waveguide elements in the waveguide element array and facing one end of the optical active element array unit is made of a thermally conductive material with a high thermal conductivity. The thermally conductive material includes diamond, aluminum nitride, silicon carbide, graphite, but is not limited thereto, thereby conducting heat to each optical active element to ensure the light emission quality of each optical active element.
[0015] In a preferred embodiment of the present invention, the light absorber between two adjacent waveguide elements in the waveguide element array and facing the active element array unit is constructed using a thermoelectric cooling structure to control the temperature of each active optical element and ensure the light emission quality of each active optical element.
[0016] In a preferred embodiment of the present invention, each waveguide element in the waveguide array unit is a gradient refractive index lens (Grin Lens) in the form of a general optical fiber, waveguide, or waveguide.
[0017] In a preferred embodiment of this utility model, the YZ cross-sectional diameter of the photoelectric conversion material in the structure of each active optical element is smaller than the YZ cross-sectional diameter of the corresponding waveguide core light source end, so that most of the light energy emitted by the photoelectric conversion material of each active optical element enters the core of each waveguide element for transmission, thereby improving the optical coupling efficiency of the communication optical connection device.
[0018] In a preferred embodiment of the present invention, the waveguide array unit includes a structure extending in the (Y, Z) direction outside the corresponding region of each waveguide element, and the surface of the extended structure facing the active element array unit forms a first extending plane, and the first extending plane forms the first YZ plane; wherein the optical active element array unit includes a structure extending in the (Y, Z) direction outside the corresponding region of each optical active element, and the surface of the extended structure facing the waveguide array unit forms a second extending plane, and the second extending plane forms the second YZ plane.
[0019] In a preferred embodiment of this utility model, at least one alignment key is provided on the first extended plane and at least one alignment key is provided on the second extended plane. When each alignment key provided on the first extended plane and each alignment key provided on the second extended plane are aligned with each other in the (Y, Z) coordinates, each optical axis of each waveguide element in the waveguide array unit and each optical axis of each optical active element in the optical active element array unit will also be aligned with each other, thereby facilitating the calibration and positioning operation between the waveguide array unit and the optical active element array unit.
[0020] In a preferred embodiment of the present invention, the alignment mark on the first extended plane is a magnetic material, the alignment mark on the second extended plane is a magnetic material, and the corresponding magnetic material of the alignment mark on the first extended plane and the magnetic material of the alignment mark on the second extended plane have opposite magnetic poles that attract each other. Attached Figure Description
[0021] Figure 1 This is a schematic cross-sectional view of the XY plane of an embodiment of the communication optical connection device of this utility model (where the active optical element is an LED or a VCESL).
[0022] Figure 2 for Figure 1 A schematic diagram of the emitted light.
[0023] Figure 3 for Figure 2 Extended sectional view of section line 3-3.
[0024] Figure 4 for Figure 2 Extended sectional view of section line 4-4.
[0025] Figure 5A for Figure 2 Extended sectional view of section line 5A-5A.
[0026] Figure 5B for Figure 2Extended sectional view of section line 5B-5B.
[0027] Figure 6A This is a cross-sectional view of the structure of a process (step S3-1) in the fabrication of the mother carrier plate unit (step S3) in this utility model.
[0028] Figure 6B for Figure 6A A cross-sectional view of the structure of the next process (step S3-2).
[0029] Figure 6C for Figure 6B A cross-sectional view of the structure of the next process (step S3-3).
[0030] Figure 6D for Figure 6C A cross-sectional view of the structure of the next process (step S3-4).
[0031] Figure 6E for Figure 6D A cross-sectional view of the structure of the next process (step S3-5).
[0032] Figure 7A for Figure 6E A cross-sectional view of the structure of the next process (steps S3-6).
[0033] Figure 7B for Figure 7A A cross-sectional view of the structure of the next process (step S3-7).
[0034] Figure 7C for Figure 7B A cross-sectional view of the structure of the next process (step S3-8).
[0035] Figure 7D for Figure 7C A cross-sectional view of the structure of the next process (step S3-9).
[0036] Figure 8 This is a cross-sectional view of the structure of the active light element (LED, VCESL, detector) array unit on the epitaxial substrate (step S2) in this utility model.
[0037] Figure 9A This is a cross-sectional view of the structure of the mother carrier plate unit and the photoactive element array unit (the photoactive elements are on the epitaxial carrier plate) connected into a single unit in this utility model.
[0038] Figure 9B for Figure 9A A cross-sectional view of the next process (removal of the epitaxial substrate).
[0039] Figure 9CIn this utility model, the waveguide array unit and such Figure 9B The diagram shows the XY plane assembly of the assembly (the mother carrier unit and the optical active element array unit are connected as one unit).
[0040] Figure 10 This is a schematic cross-sectional view of the waveguide array unit (the waveguide element is an optical fiber) in the present invention in the XY plane.
[0041] Figure 11 This is a schematic cross-sectional view of the motherboard unit in the XZ plane of another embodiment of the communication optical connection device of this utility model (when the active optical element is an edge-emitting element).
[0042] Figure 12 for Figure 11 A schematic cross-sectional view of the mother carrier plate unit in the XZ plane.
[0043] Figure 13 This is a schematic cross-sectional view of the optical active element array unit on the epitaxial substrate in another embodiment of the optical connection device of this utility model (when the optical active element is an edge-emitting element).
[0044] Figure 14 For example Figure 13 The diagram shows a cross-sectional view of the communication optical active element array unit on an epitaxial substrate in the XZ plane.
[0045] Figure 15 For example Figure 11 The mother carrier plate unit shown is as follows Figure 14 The diagram shows a YZ-plane schematic of an array of photoactive elements on an epitaxial substrate.
[0046] Figure 16 for Figure 15 A cross-sectional view of the structure of the active optical element array unit after the epitaxial substrate has been removed.
[0047] Figure 17 for Figure 15 A schematic diagram of the XZ plane.
[0048] Figure 18 for Figure 16 A schematic diagram of the XZ plane.
[0049] Figure 19 For example Figure 18 The diagram shows the XZ plane schematic of the combination of the mother carrier unit and the optical active element array unit (with the epitaxial carrier removed) and the waveguide array unit (the waveguide element is an optical fiber) before combination.
[0050] Figure 20 for Figure 19A schematic diagram of the combined XZ plane.
[0051] Figure 21 for Figure 20 A schematic diagram of the emitted light in the XZ plane.
[0052] Figure 22 for Figure 21 A schematic diagram of the emitted light in the XY plane.
[0053] Figure 23 for Figure 8 A magnified schematic diagram of the XY plane of the active optical element (21).
[0054] Figure 24 for Figure 23 A schematic diagram of the XZ plane of the active optical element (21).
[0055] Figure 25 for Figure 24 A schematic diagram of the cross-section (XZ plane) of the mid-section line 25-25 (photoelectric conversion material).
[0056] Figure 26 for Figure 13 A partially enlarged schematic diagram of the active optical element (81) in the XY plane.
[0057] Figure 27 for Figure 26 A schematic diagram of the XZ plane of the active optical element (81).
[0058] Figure 28 for Figure 27 Schematic diagram of the cross section (XZ plane) along section line 28-28.
[0059] Figure 29 This is a schematic diagram of the XY plane of emitted light when the cross-sectional diameter of the photoelectric conversion material of the light source is smaller than the cross-sectional diameter of the waveguide.
[0060] Figure 30A , Figure 30B They are respectively Figure 20 Schematic diagram of the cross section (XZ plane) at section line 30-30.
[0061] Figure 31A , Figure 31B They are respectively Figure 30A , Figure 30B An enlarged schematic diagram of the surface (13) and the first YZ plane (14) shown.
[0062] Figure 32 This is a partially enlarged schematic diagram of the XY plane of the waveguide array unit in this utility model.
[0063] Figure 33 , Figure 34 , Figure 35 They are respectively Figure 32 Schematic diagram of the cross-sections (XZ plane) of the mid-section lines 33-33, 34-34, and 35-35.
[0064] Explanation of reference numerals in the attached figures: 1-Communication optical connection device; 2-Outer shell; 10-Waveguide array unit; 10a-Carrier plate; 10b-Hole; 11-Waveguide element; 111-Core; 112-Clad layer; 12-Optical axis; 13-Surface; 14-First YZ plane; 14a-First extension plane; 20-Optical active element array unit; 20a-Epilithographic carrier plate; 20b-Assembly; 21-Optical active element; 21a-Conductive connecting surface; 21b-Conductive connecting surface; 211-Light source wafer; 213-Photoelectric conversion material; 22-Optical axis; 23-Surface; 24-Second YZ plane; 24a-Second extended plane; 241-Extended plane; 30-Main carrier board unit; 301-Electronic circuit; 302-Conductive line; 30a-Main carrier board body; 30b-First surface; 30c-Second surface; 30d-Convex surface; 30e-Optical axis; 30f-Focusing mirror; 30g-First groove; 30h-First absorber; 30i-Second groove; 30j-Connected body; 30k-Second absorber; 30l-Sub-surface; 30m-Third groove; 30n-Lower-order surface; 31- Subcarrier; 31a-Conductive connecting surface; 31b-Conductive connecting surface; 32-Positioning reference axis; 33-First surface; 331-Extending plane; 34-Second surface; 35-Focusing mirror; 40-Filling material; 40a-Void; 50-Optical channel; 60-Light absorber; 60a-Light absorber; 60b-Thermoelectric material; 60c-Thermoelectric cooling structure; 601-Thermoelectric material layer; 602-Conductive material layer; 603-P pole; 604-N pole; 605-Insulating material layer; 70-Main carrier unit; 71-Subcarrier; 71a- 71b - Conductive connecting surface; 72 - Optical axis; 73 - First surface; 74 - Second surface; 75 - Groove; 80 - Photoactive element array unit; 80a - Epitaxial substrate; 80b - Assembly; 81 - Photoactive element; 81a - Conductive connecting surface; 81b - Conductive connecting surface; 811 - Light source wafer; 813 - Photoelectric conversion material; 82 - Optical axis; 83 - Light emission edge; 84 - Second YZ plane; L - Light; L1 - Side light; M3 - Alignment mark; M4 - Alignment mark; M5 - Alignment mark; M6 - Alignment mark. Detailed Implementation
[0065] The structure and technical features of this utility model are described in detail below with reference to the illustrations. The illustrations are only used to illustrate the structural relationships and related functions of this utility model. Therefore, the dimensions of each component in the illustrations are not drawn to actual proportions and are not intended to limit this utility model.
[0066] refer to Figure 1 As shown in Figure 5, this utility model is a communication optical connection device 1, which sequentially includes a waveguide array unit 10, an optical active element array unit 20 and a mother carrier unit 30 along the X-axis direction in a three-dimensional XYZ space. The waveguide array unit 10, the optical active element array unit 20 and the mother carrier unit 30 are mutually calibrated, positioned and connected and fixed into one unit.
[0067] The waveguide array unit 10 includes at least one waveguide element 11, and the waveguide elements 11 are spaced apart on the YZ plane in the XYZ three-dimensional space to form an array, as shown in FIG5. In this embodiment, each waveguide element 11 is illustrated using optical fiber as an example, but is not intended to limit the present invention. Each waveguide element 11 has a waveguide core 111 and a waveguide cladding layer 112 covering the periphery of the core 111. In addition, a light absorber 60a formed of light-absorbing material (e.g., light-absorbing ceramic) is provided between each waveguide element 11. The optical axis 12 of each waveguide element 11 is parallel to the X-axis direction, and the surface of each waveguide element 11 facing the optical active element array unit 20 forms a surface 13. In a general sense, the surface 13 may be uneven (e.g., Figure 31A , Figure 31B As shown), therefore, the plane closest to the photoactive element array unit 20 on surface 13 and perpendicular to the X-axis direction is further defined as the first YZ plane 14 (as shown). Figure 31A , Figure 31B As shown), the first YZ plane 14 is perpendicular to the X-axis direction and the optical axis 12 of each waveguide element 11. Each waveguide element 11 is a gradient refractive index lens, including general optical fibers, waveguides, or waveguide forms. The following is a practical method for manufacturing the waveguide array unit 10, but it is not intended to limit the present invention: First, a carrier plate 10a is formed using a light-absorbing material, such as light-absorbing ceramic or polymeric light-absorbing material, but not limited thereto. Figure 5A As shown, the carrier plate 10a has a plurality of holes 10b arranged in a predetermined array, and each waveguide element 11 is inserted and positioned in each hole 10b in a one-to-one correspondence.
[0068] The optical active element array unit 20 includes at least one optical active element 21, and each optical active element 21 is arranged at intervals on the YZ plane in the XYZ three-dimensional space to form an array, such as Figure 4As shown; each active optical element 21 includes a light emitting element (i.e., a light source that can convert electrical energy into light energy, such as an LED or a laser) or a light receiving element (i.e., a detector that can convert light energy into electrical energy). The light emitting element includes a light-emitting diode (LED) or a vertical-cavity surface-emitting laser (VCSEL). In this embodiment, each active optical element 21 is illustrated using a micro LED as an example. Figure 1 , Figure 4 , Figure 8 As shown, but not intended to limit the present invention, the photoactive element array unit 20 can be considered as a micro-light-emitting diode (MicroLED) semiconductor chip, such as Figure 1 , Figure 4 , Figure 8 As shown, each photoactive element 21 can be considered as a combination of photoelectric conversion materials fabricated on the micro-LED semiconductor wafer, including photoelectric conversion or photon emitting materials such as PN junctions (hereinafter referred to as photoelectric conversion materials 213), and each conductive contact and solder surface 21a and 21b; the optical axis 22 of each photoactive element 21 is parallel to the X-axis direction, and a surface 23 is formed on the surface of each photoactive element 21 facing the waveguide array unit 10. In a general sense, the surface 23 may be uneven (see reference). Figure 30A Therefore, the plane closest to the waveguide array unit 10 and perpendicular to the X-axis direction on surface 23 is further defined as the second YZ plane 24 (refer to...). Figure 30B That is, the second YZ plane 24 is perpendicular to the X-axis direction and the optical axis 22 of each photoactive element 21. As for the manufacturing practice of the photoactive element array unit 20, it will be described later.
[0069] The mother carrier unit 30 is made of a non-light-absorbing material, including but not limited to semiconductors, glass, acrylic, transparent ceramics, etc., but this is not intended to limit the present invention. It includes at least one sub-carrier 31, and each sub-carrier 31 is arranged at intervals on the YZ plane in the XYZ three-dimensional space to form an array, such as... Figure 3As shown, each sub-carrier plate 31 can be pre-set with a corresponding positioning reference axis 32 (for positioning by calibration coupling with the optical axes 22 of each optical active element 21) according to the optical axis 22 of each optical active element 21. This reference axis is parallel to the X-axis direction, and each sub-carrier plate 31 has a first surface 33 and a second surface 34 along the X-axis direction. The first surface 33 of each sub-carrier plate 31 faces and is close to or connected to each optical active element 21 in the semiconductor optical active array unit 20, while the second surface 34 is located on the opposite side of each first surface 33 along the X-axis direction. Furthermore, reference... Figure 7D , Figure 8 and Figure 9A The conductive connecting surfaces 31a on each sub-carrier board 31 are positioned in the YZ plane in the same way as the conductive connecting surfaces 21a of each photoactive element 21, and the conductive connecting surfaces 31b on each sub-carrier board 31 are positioned in the same way as the conductive connecting surfaces 21b of each photoactive element 21, so that when each semiconductor photoactive element 21 is placed and assembled on each sub-carrier board 31, each conductive connecting surface 21a, 21b can be electrically connected to each conductive connecting surface 31a, 31b. The actual fabrication of the mother carrier board unit 30 will be discussed later.
[0070] refer to Figure 1 and Figure 9C The first YZ plane 14 is parallel to and close to the second YZ plane 24, and the gap between the first YZ plane 14 and the second YZ plane 24 is filled with a filling material 40. The optical index of the filling material 40 is greater than that of air, and the filling material 40 does not absorb the light signals of each optical channel 50, thereby ensuring that there is no air gap or vacuum gap between the waveguide array unit 10 and the optical active element array unit 20. The optical axes 12 of each waveguide element 11 in the waveguide array unit 10 are coupled one-to-one to the optical active element array. The optical axes 22 of each optical active element 21 in unit 20 and the positioning reference axes 32 of each sub-carrier plate 31 in the mother carrier plate unit 30 are used to connect each waveguide element 11, each optical active element 21 and each sub-carrier plate 31 in sequence along the X-axis direction to form an optical channel 50 without any air gap or vacuum gap. In this way, the optical connection device 1 includes at least one optical channel 50 and each optical channel 50 is arranged at intervals on the YZ plane in the XYZ three-dimensional space to form an array. This can be regarded as the main technical feature of the communication optical connection device 1 of this utility model.
[0071] Furthermore, if each active optical element 21 is a semiconductor light source, and each light source emits light towards each waveguide element 11, then the closer the active optical element 21 (the active optical element array unit 20) is to each waveguide element 11 (the waveguide array unit 10), the larger the solid angle of the light emitted by each light source towards each waveguide element 11 can be transmitted into each waveguide element 11, that is, the higher the optical coupling efficiency between the light source and the waveguide. Similarly, if each active optical element 21 is a detector, the closer the active optical element 21 is to each waveguide element 11, the larger the solid angle of the light from each waveguide element 11 is absorbed by the portion of the detector facing the waveguide. That is, the higher the optical coupling efficiency between the waveguide and the detector. Therefore, the distance between the first YZ plane 14 and the second YZ plane 24 in the X direction should be as small as possible. Theoretically, the first YZ plane 14 and the second YZ plane 24 should not be completely close together. However, in reality, the first YZ plane 14 and the second YZ plane 24 cannot be perfectly parallel, so there must be a gap between them. Since the optical index of each waveguide element 11 and each optical active element 21 is much greater than that of air or vacuum, if the gap were filled with air or vacuum, the transmission of light between each waveguide element 11 and each optical active element 21 would undergo a large change in optical index, resulting in significant reflection and refraction on both the first YZ plane 14 and the second YZ plane 24. This would reduce the optical coupling efficiency between the optical active element 21 and each waveguide element 11. Therefore, in this invention, the filling material 40 is selected with an optical index greater than that of air or vacuum, which effectively improves the optical coupling efficiency between each optical active element 21 and each waveguide element 11.
[0072] The filler material 40 includes a gel or liquid form. When the filler material 40 is a gel filler, it can also be used as an adhesive. After curing, the gel filler 40 can position and connect the waveguide array unit 10 and the optical active element array unit 20 together. Furthermore, the gel filler 40 can be cured by time, light irradiation, or heating, and after curing, it can further coat the periphery of the optical active element array unit 20 and each optical active element 21, thereby strengthening the packaging structure of the communication optical connection device 1. When the filler material 40 is a liquid filler, refer to... Figure 2 The periphery of the gap between the waveguide array unit 10 and the optical active element array unit 20 can be tightly covered by an outer shell 2, so that the liquid filler 40 can flow freely in the internal space of the outer shell 2, including all the gaps between the waveguide array unit 10 and the optical active element array unit 20, so as to generate heat dissipation effect for the optical active element array unit 20.
[0073] Furthermore, the calibration and positioning coupling of each optical axis 22 of the optical active element array unit 20 and each optical axis 12 of the optical waveguide array unit 10 can adopt the following "optical axis skew calibration feedback mechanism": the optical axis alignment mechanism generally has x, y, z, Five-dimensional adjustments. When the first YZ plane 14 and the second YZ plane 24 approach each other, the skewness of the normals of the first YZ plane 14 and the second YZ plane 24 is sensed, including but not limited to the following two examples: Example 1, sensing and comparing the gaps between the first YZ plane 14 and the second YZ plane 24 in several directions along the X-axis in the (Y, Z) plane; Example 2, sensing the pressure in several directions in the (Y, Z) plane when the first YZ plane 14 and the second YZ plane 24 are in contact. The aforementioned skewness information is used to feed back to the optical axis alignment mechanism. and This makes the first YZ plane 14 and the second YZ plane 24 more parallel. The higher the parallelism between the first YZ plane 14 and the second YZ plane 24, the higher the optical coupling efficiency between the optical axes 22 of the optical active element array unit 20 and the optical axes 12 of the waveguide array unit 10. As can be seen from the above "optical axis skew calibration feedback mechanism", when the first YZ plane 14 and the second YZ plane 24 have a larger relative (same YZ coordinate) continuous plane, that is, the fewer gaps exist on the entire first YZ plane 14 and the second YZ plane 24, then in calibration practice, the "optical axis skew calibration feedback mechanism" can be used to make the normals of the first YZ plane 14 and the second YZ plane 24 more parallel to each other, thereby increasing the optical coupling efficiency between the optical active element array unit 20 and the waveguide array unit 10.
[0074] To ensure a larger relative continuous plane between the first YZ plane 14 and the second YZ plane 24, methods include, but are not limited to, the following: First, for each photoactive element 21 that is a surface-emitting light source (such as a VCSEL, LED) or a photodetector, the normal of the first YZ plane 14 is its light-emitting or light-receiving optical axis 22, and the photoactive element array unit 20 can be combined with its epitaxial substrate 20a via flip-chip bonding, such as... Figure 8As shown, or referring to step S2-1 of the manufacturing method of this utility model (see paragraph 0046), "provide an epitaxial substrate 20a for an active light element: the epitaxial substrate 20a for an active light element can be a ruby substrate or a sapphire substrate"; and step S2-2 (see paragraph 0047), "use semiconductor process technology to fabricate an active light element array unit 20 on the epitaxial substrate 20a for an active light element, thereby forming a combination 20b that combines the epitaxial substrate 20a for an active light element and the array unit 20 for an active light element", thereby forming a continuous second YZ plane 24 on the entire surface 23. Secondly, for each active light element 21 as a side-emitting light source (such as FP laser, DFB laser, etc.), a material with an optical index greater than that of air or vacuum can be filled in the depressions on the surface, so that a continuous plane with a large range still belonging to the second YZ plane 24 is formed on the surface of the active light element array unit 20 region. Thirdly, even if the surface 23 (such as Figure 30A As shown (described later), the region of the photoactive element array unit 20 has a recess, which allows the surface 23 to form a continuous extending plane 24a that coincides with the second YZ plane 24 outside the region of the photoactive element array unit 20 on the wafer of the photoactive element array unit 20. Figure 30B As shown (to be discussed later).
[0075] The filler material 40 may be liquid or gel-like, in order to fill all gaps or depressions between the surface 13 and the surface 23.
[0076] The combination of the photoactive element array unit 20 and the mother substrate unit 30 can be achieved through each conductive connecting surface 21a, 21b, 31a, 31b (e.g., Figure 7D , Figure 8 , Figure 9A and Figure 9B The corresponding connection between the two (as shown) enables the mutual transmission of electrical signals and energy between them. Therefore, electronic circuits 301 and 302 can be constructed on the motherboard unit 30, such as... Figure 3 As shown but not limited to, electronic circuit chips may be packaged on the motherboard unit 30.
[0077] Each second surface 34 of each sub-carrier plate 31 in the mother carrier plate unit 30 is further formed with a focusing mirror 35, and the optical axis (32) of each focusing mirror 35 (i.e., the positioning reference axis 32 of each sub-carrier plate 31) is parallel to the X-axis on the side close to the photoactive element array unit 20. When each photoactive element 21 in the photoactive element array unit 20 is a semiconductor light source element, the light energy emitted by each photoactive element 21 to each focusing mirror 35 of each sub-carrier plate 31 is reflected and focused by each focusing mirror 35 before entering each waveguide element 11 in the waveguide array unit 10. When each photoactive element 21 in the photoactive element array unit 20 is a semiconductor photodetector (PD), the light energy output from each waveguide element 11 in the waveguide array unit 10 and directed to each focusing mirror 35 of each sub-carrier plate 31 is reflected and focused by each focusing mirror 35 before entering each photoactive element 21 in the photoactive element array unit 20. In the actual fabrication of each focusing mirror 35, each second surface 34 of each subcarrier plate 31 can be first formed into a curved surface with the reflection focal point located at a point on each optical axis 22 close to each active optical element 21, and then a reflective material can be applied to the curved surface to form each focusing mirror 35.
[0078] The materials of the optical active element array unit 20, which carries each optical active element 21, and the materials of each sub-carrier plate 31 in the mother carrier plate unit 30 constituting each focusing mirror 35 structure, all have extremely low absorption rates of the optical signals of each optical channel 50. These materials include, but are not limited to, semiconductors, ceramics, glass, and acrylic. Each optical active element 21 has conductive communication surfaces 21a and 21b that connect the electrical signals of each sub-carrier plate 31, such as... Figure 8 , Figure 9A As shown. Each subcarrier board 31 is provided with conductive communication surfaces 31a and 31b that connect the electrical signals of each optical active element 21, such as... Figure 7D , Figure 9A As shown. The motherboard unit 30 also has conductive lines 302 connecting the electronic circuit 301 to the electrical signals of each conductive communication surface (31a and 31b), such as... Figure 3 As shown. The material of each conductive connecting surface 21a, 21b, 31a, 31b or each conductive line 302 has a very low absorption rate of the optical signal of each optical channel 50. This material includes, but is not limited to, indium tin oxide (ITO), conductive polymers, carbon nanotubes, graphene, ultrathin metals, and nano-metal meshes.
[0079] refer to Figure 1 , Figure 2 , Figure 8 , Figure 9AAccording to the semiconductor manufacturing practice of this utility model, the positions of each conductive connecting surface 21a on each photoactive element 21 in the YZ plane are consistent with the positions of each conductive connecting surface 31a on each subcarrier plate 31 in the YZ plane, and the positions of each conductive connecting surface 21b on each photoactive element 21 in the YZ plane are consistent with the positions of each conductive connecting surface 31b on each subcarrier plate 31 in the YZ plane, so as to facilitate that the optical axis 22 of the light source of each photoactive element 21 can be accurately located at the relative position of each subcarrier plate 31 (i.e., coupled one-to-one with each positioning reference axis 32 preset by each subcarrier plate 31). Furthermore, light absorbers 60 made of light-absorbing material are further provided between adjacent two active optical elements 21 and between adjacent two subcarrier plates 31. These light-absorbing materials include, but are not limited to, semiconductor materials, polyimide, or ceramics. This allows each light absorber 60 to absorb optical signals from adjacent optical channels 50, effectively preventing crosstalk between adjacent optical channels 50. Light absorbers 60a made of light-absorbing material are also further provided between adjacent two waveguide elements 11. These light-absorbing materials include, but are not limited to, semiconductor materials, polyimide, or ceramics. This allows each light absorber 60a to absorb optical signals from adjacent optical channels 50, effectively preventing crosstalk between adjacent optical channels 50. (Reference) Figure 2 Although some lateral light L1 emitted by the light active element 21 of one of the two adjacent optical channels 50 passes through the gap (30j) between the light absorbers 60 and enters the adjacent optical channel 50, the gap (30j) between the light absorbers 60 is as follows: Figure 7A , Figure 7B As shown, a connecting body 30j belonging to the mother substrate body 30a is reserved between each second groove 30i and its corresponding first groove 30g. However, the lateral light L1 passing through the connecting body 30j will be absorbed by the light absorbers 60 of the adjacent light channels 50, thereby effectively avoiding interference noise between adjacent light channels 50. In other words, the geometric design of each light absorber 60 extending in the (Y, Z) direction (e.g., including the Y-direction width and X-direction height of the connecting body 30j) is sufficient to block the light from entering each adjacent light channel 50.
[0080] refer to Figure 1 As shown in Figure 5, when each of the light active elements 21 in the light active element array unit 20 is a light-emitting diode (LED) or a vertical cavity surface-emitting laser (VCSEL), the optical connection device 1 includes at least one optical channel 50 and each optical channel 50 is arranged at intervals on the YZ plane in the XYZ three-dimensional space to form a two-dimensional array.
[0081] The method for manufacturing the optical connection device 1 of this utility model may include the following steps, but is not limited thereto:
[0082] Step S1: Fabricate a waveguide array element 10: Reference Figure 1 , Figure 5A The waveguide array unit 10 includes at least one waveguide element 11 and each waveguide element 11 is spaced apart on the YZ plane in an XYZ three-dimensional space to form an array, wherein the optical axis 12 of each waveguide element 11 is parallel to the X-axis direction in the XYZ three-dimensional space, and the surface of each waveguide element 11 facing a light active element array unit 20 forms or defines a first YZ plane 14 perpendicular to the X-axis direction.
[0083] Step S2: Fabricate an optical active element array unit 20: Reference Figure 1 , Figure 4 The optical active element array unit 20 includes at least one optical active element 21, and each optical active element 21 is spaced apart on the YZ plane in the XYZ three-dimensional space to form an array. The optical axis 22 of each optical active element 21 is parallel to the X-axis direction, and the surface of each optical active element 21 facing the waveguide array unit 10 forms or defines a second YZ plane 24 perpendicular to the X-axis direction. Furthermore, refer to... Figure 8 Each active optical element 21 includes a photoelectric conversion material 213 (PN junction region), at least one conductive connecting surface 21a communicating with the N-pole of the photoelectric conversion material 213, and at least one conductive connecting surface 21b communicating with the P-pole of the photoelectric conversion material 213. The positions of the conductive connecting surfaces 21a of each active optical element 21 in the YZ plane correspond to the positions of the conductive connecting surfaces 31a of each sub-carrier plate 31 in the YZ plane. Similarly, the positions of the conductive connecting surfaces 21b of each active optical element 21 in the YZ plane correspond to the positions of the conductive connecting surfaces 31b of each sub-carrier plate 31 in the YZ plane. Figure 9A , Figure 9B As shown.
[0084] Step S3: Fabricate a motherboard unit 30: Reference Figure 1 , Figure 3 The mother carrier unit 30 is made of a non-light-absorbing material, but is not limited to it. It includes at least one sub-carrier 31 and each sub-carrier 31 is arranged at intervals on the YZ plane in the XYZ three-dimensional space to form an array. Each sub-carrier 31 has a first surface 33 and a second surface 34 along the X-axis direction. Each first surface 33 faces each light active element 21 in the light active element array unit 20, and each second surface 34 is located on the opposite side of each first surface 33 along the X-axis direction.
[0085] Step S4: Along the X-axis direction in the XYZ three-dimensional space, calibrate and position the waveguide array unit 10, the optical active element array unit 20, and the mother carrier unit 30, and connect and fix them into a whole: Reference Figure 1 or Figure 9C The first YZ plane 14 is parallel to and close to the second YZ plane 24. The optical axes 12 of each waveguide element 11 in the waveguide array unit 10 are coupled one-to-one to the optical axes 22 of each optical active element 21 in the optical active element array unit 20. All gaps between the waveguide array unit 10 and the optical active element array unit 20 are filled with a filling material 40. The optical index of the filling material 40 is greater than that of air. The filling material 40 does not absorb the light signal of the optical channel 50. This ensures that there are no air gaps or vacuum gaps between the waveguide array unit 10 and the optical active element array unit 20, so that each waveguide element 11, each optical active element 21 and each subcarrier plate 31 can be sequentially connected along the X-axis to form an optical channel 50 without any air gaps or vacuum gaps.
[0086] Step S5: Assemble the communication optical connection device 1, such that the communication optical connection device 1 includes at least one optical channel 50 and each optical channel 50 is arranged at intervals on the YZ plane in the XYZ three-dimensional space to form an array, such as... Figure 1 , Figure 2 As shown.
[0087] In the semiconductor manufacturing practice of this utility model, step S2 may further include the following steps:
[0088] Step S2-1: Provide an epitaxial substrate 20a for an active optical element: Reference Figure 8 The epitaxial substrate 20a of the active optical element can be a ruby substrate or a sapphire substrate.
[0089] Step S2-2: Using semiconductor manufacturing technology, a photoactive element array unit 20 is fabricated on the photoactive element epitaxial substrate 20a to form a composite 20b that combines the photoactive element epitaxial substrate 20a and the photoactive element array unit 20, wherein the boundary surface between the element array unit 20 and the photoactive element epitaxial substrate 20a is a plane perpendicular to the x-axis: Reference Figure 8 The optical active element array unit 20 includes at least one optical active element 21, and each optical active element 21 is arranged at intervals on the YZ plane in the XYZ three-dimensional space to form an array, such as Figure 4 As shown, the optical axis 22 of each active optical element 21 is parallel to the X-axis direction. However, since the above design and semiconductor manufacturing process can be achieved using current semiconductor technology and are not the focus of this utility model, they will not be described in detail here.
[0090] In the semiconductor manufacturing practice of this utility model, step S3 may further include the following steps:
[0091] Step S3-1: Reference Figure 6A A mother substrate body 30a is provided, which is made of a non-light-absorbing material. The mother substrate body 30a has a thickness in the X-axis direction in a three-dimensional XYZ space, and on both sides of the thickness, there is a first surface 30b and a second surface 30c extending in the YZ plane relative to the first surface 30b.
[0092] Step S3-2: Reference Figure 6B The second surface 30c is formed into a shape having at least one curved surface 30d, and each curved surface 30d is arranged at intervals on the YZ plane in the XYZ three-dimensional space to form an array, wherein the optical axis 30e of each curved surface 30d is parallel to the X-axis direction.
[0093] Step S3-3: Reference Figure 6C The reflective material is applied to each curved surface 30d to form a focusing mirror 30f, so that each focusing mirror 30f can be arranged at intervals on the YZ plane in the XYZ three-dimensional space to form an array.
[0094] Step S3-4: Reference Figure 6D A first groove 30g with a depth is formed between two adjacent focusing mirrors 30f.
[0095] Step S3-5: Reference Figure 6E A first light absorber 30h is formed by coating and filling each first groove 30g with a light-absorbing material, so that each focusing mirror 30f is arranged at intervals on the YZ plane in the XYZ three-dimensional space through each first light absorber 30h to form an array.
[0096] Step S3-6: Reference Figure 7A On the first surface 30b of the mother substrate 30a, a second groove 30i with a depth is formed at a position corresponding one-to-one with each of the first light absorbers 30h. However, a section of connecting body 30j belonging to the mother substrate 30a is retained between each second groove 30i and each corresponding first groove 30g.
[0097] Step S3-7: Reference Figure 7BA second light absorber 30k is formed by coating and filling each second groove 30i with a light-absorbing material, so that at least one sub-surface 30l can be retained and formed on the first surface 30b of the mother substrate 30a, and the part of the mother substrate 30a between each sub-surface 30k and each one-to-one corresponding focusing mirror 30f is defined as a sub-sub ...
[0098] When each optical active element 21 in the optical active element array unit 20 is a light-emitting diode (LED), a vertical-cavity surface-emitting laser (VCSEL), or a photodetector, the following steps may be further included after step S3-7:
[0099] Step S3-8: Reference Figure 7C A conductive communication surface 31a is further provided on each sub-surface 30l that is retained and formed on the first surface 30b of the mother carrier plate body 30a for electrical connection with each conductive communication surface 21a of each photoactive element 21 in the photoactive element array unit 20, so as to achieve the light emission or light reception function of each photoactive element 21.
[0100] Step S3-9: Reference Figure 7D A third groove 30m with a depth is formed on each sub-surface 30l other than the conductive connecting surface 31a. A low-level surface 30n is formed through each third groove 30m. A conductive connecting surface 31b is further provided on each low-level surface 30n to be electrically connected to the conductive connecting surface 21b of each photoactive element 21 in the photoactive element array unit 20 to achieve the light emission or light reception function of each photoactive element 21.
[0101] Step S4 may further include the following steps:
[0102] Step S4-1: Reference Figure 9A The combined epitaxial substrate 20a and the epitaxial substrate array unit 20, which integrates the active optical element, are aligned and connected to the parent substrate unit 30 along the X-axis in the XYZ three-dimensional space. The conductive communication surfaces 21a and 21b of each active optical element 21 in the epitaxial substrate array unit 20 correspond to the conductive communication surfaces 31a and 31b of each sub-sub ... Figure 9BAs shown, a filler material 40 is used to fill the area and can also be used as an adhesive. The optical index of the filler material 40 is greater than that of air, and the filler material 40 does not absorb the light signals of each optical channel 50.
[0103] Step S4-2: Reference Figure 9B After the filler material 40 has cured, the epitaxial substrate 20a of the active optical element is removed, so that the side of the active optical array unit 20 facing away from the mother substrate unit 30 forms a second YZ plane 24 perpendicular to the X-axis. Then the active optical array unit 20 and the mother substrate unit 30 are bonded together to form a composite body (20, 30) through the filler material 40, and there is no air gap or vacuum gap between the active optical array unit 20 and the mother substrate unit 30.
[0104] Step S4-3: Reference Figure 9C The waveguide array unit 10, the optical active element array unit 20, and the mother carrier unit 30 are then calibrated and positioned together along the X-axis direction in the XYZ three-dimensional space to form the communication optical connection device 1 of this utility model. The optical axes 12 of each waveguide element 11 in the waveguide array unit 10 are coupled one-to-one to the optical axes 22 of each optical active element 21 in the optical active element array unit 20. The first YZ plane 14 is parallel to and close to the second YZ plane 24. The gap between the first YZ plane 14 and the second YZ plane 24 is filled with a filling material 40. The optical index of the filling material 40 is greater than that of air. The filling material 40 does not absorb the optical signals of each optical channel 50, so that there is no air gap or vacuum gap between the waveguide array unit 10 and the optical active array unit 20.
[0105] Step S4-4: After the waveguide array unit 10, the optical active element array unit 20, and the mother carrier unit 30 are connected and fixed together, the communication optical connection device 1 is assembled.
[0106] Step S4 may further include the following steps:
[0107] Step S4-5: An optical axis alignment mechanism is used to perform calibration and positioning work on the one-to-one coupling of each optical axis 12 of each waveguide element 11 to each optical axis 22 of each optical active element 21.
[0108] Step S4-6: Sensing the orientation of the mutual skew between the normals of the first YZ plane 14 and the normal of the second YZ plane 24 during the calibration and positioning operation of the waveguide array unit 10 and the optical active element array unit 20.
[0109] Step S4-7: Feed back the information on the orientation of the two normals that are skewed to each other to the optical axis alignment mechanism so that the first YZ plane 14 and the second YZ plane 24 can be more parallel, and thus make the first YZ plane 14 and the second YZ plane 24 closer together.
[0110] refer to Figure 1 , Figure 2 In the semiconductor practice of manufacturing this utility model, in order to complete the calibration operation of the communication optical connection device 1, a magnetic alignment array can be provided at the outer edge (331) of the plane facing the optical active array unit 20 on the motherboard 30. The magnetic alignment array includes at least one alignment mark (magnetic element) M3, which is referred to here as Figure 3 As an example and not intended to limit the present invention, the magnetic alignment array includes four alignment marks (magnetic elements) M3, each alignment mark (magnetic element) M3 located at different YZ coordinates; furthermore, a magnetic alignment array is provided at the outer edge (241) of the plane facing the mother carrier unit 30 of the optical active array unit 20, the magnetic alignment array including at least one alignment mark (magnetic element) M4, referred to herein as Figure 4 For illustrative purposes only and not intended to limit the scope of this invention, the magnetic alignment array includes four alignment marks (magnetic elements) M4, each located at a different YZ coordinate. The positions of each alignment mark (magnetic element) M3 correspond one-to-one with the positions of each alignment mark (magnetic element) M4, but their magnetic poles are opposite. In this way, the corresponding magnetic attraction between each alignment mark (magnetic element) M3 and M4 facilitates the precise alignment of the conductive connecting surfaces 21a and 21b on each photoactive element 21 in the photoactive array unit with the conductive connecting surfaces 31a and 31b on each sub-carrier plate 31 in the mother carrier plate unit 30.
[0111] In other words, for reference Figure 3 The mother carrier unit 30 can extend in the (Y, Z) direction outside the optical axis region of the daughter carrier unit 31 to form an extension plane 331 facing the active element array unit 20, and at least one alignment mark (magnetic element) M3 made of magnetic material is provided on the extension plane 331. (Reference) Figure 4The active element array unit 20 extends in the (Y, Z) direction outside the region of each active optical element 21 to form an extension plane 241 facing the mother carrier unit 30, and at least one alignment mark (magnetic element) M4 made of magnetic material is provided on the extension plane 241. Furthermore, each alignment mark (magnetic element) M3 and M4 has opposite magnetic properties that attract each other. When the alignment marks (magnetic elements) M3 and M4 on the extension plane 331 and the extension plane 241 are aligned and matched in the (Y, Z) coordinates, the conductive communication surfaces (31a, 31b) of each sub-carrier plate 31 in the mother carrier unit 30 are aligned and matched with the conductive communication surfaces (21a, 21b) of each active optical element 21 in the active optical element array unit 20.
[0112] refer to Figure 1 , Figure 2 , Figure 5A , Figure 5B In accordance with the semiconductor manufacturing practice of this utility model, in order to complete the calibration operation of the communication optical connection device 1, a magnetic alignment array can be provided at the outer edge (24a) of the second YZ plane 24 facing the waveguide array unit 10 of the optical active array unit 20. The magnetic alignment array includes at least one alignment mark (magnetic element) M5, which is referred to here as Figure 5A As an example and not intended to limit the present invention, the magnetic alignment array includes four alignment marks (magnetic elements) M5, each alignment mark (magnetic element) M5 located at different YZ coordinates; furthermore, a magnetic alignment array is also simultaneously provided at the outer edge (14a) of the first YZ plane 14 of the waveguide array unit 10 facing the optical active array unit 20, the magnetic alignment array including at least one alignment mark (magnetic element) M6, referred to herein as... Figure 5B For illustrative purposes only and not intended to limit the scope of this invention, the magnetic alignment array includes four alignment marks (magnetic elements) M6, each located at a different YZ coordinate. The positions of each alignment mark (magnetic element) M5 correspond one-to-one with the positions of each alignment mark (magnetic element) M6, but their magnetic poles are opposite. In this way, the corresponding magnetic attraction between each alignment mark (magnetic element) M5 and M6 facilitates precise alignment of the optical axes 12 of each waveguide element 11 in the waveguide array unit 10 with the optical axes 22 of each optical active element 21 in the optical active element array unit 20.
[0113] In other words, for reference Figure 5AThe second YZ plane 24 of the photoactive element array unit 20 can extend in the (Y, Z) direction outside the region of each photoactive element 21 to form an extension plane 24a, and at least one alignment key M5 made of magnetic material is provided on the extension plane 24a. (See reference) Figure 5B The first YZ plane 14 of the waveguide array unit 10 can extend in the (Y, Z) direction outside the region of each waveguide element 11 to form an extension plane 14a, and at least one alignment key M6 made of magnetic material is provided on the extension plane 14a. Each alignment key M5 and M6 has opposite magnetic properties that attract each other. When the alignment keys M5 and M6 provided on the extension plane 24a are aligned with each other in the (Y, Z) coordinates, the optical axes 12 of each waveguide element 11 in the waveguide array unit 10 and the optical axes 22 of each optical active element 21 in the optical active element array unit 20 will also be aligned with each other.
[0114] The optical active element array unit 20 and the mother carrier unit 30 included in the optical connection device 1 of this utility model can both be manufactured using semiconductor processes. Therefore, the communication optical connection device 1 of this utility model can not only increase the number of optical channels by realizing wafer-level packaging process, but also significantly reduce the size of the optical connection device, and improve the packaging stability by avoiding the wire bonding process of conductive interconnect surface.
[0115] Here, we will further describe the other technical features and effects of the communication optical connection device 1 of this utility model as follows: <1> Because each optical active element 21 of the optical active element array unit 20 is very close to each waveguide element 11 of the waveguide array unit 10, when each optical active element 21 is a light-emitting element, the light emitted by the light-emitting element in the -X direction (negative X direction) enters each waveguide element 11 with a considerable solid angle. When each active optical element 21 is a light receiver, the light emitted by each waveguide element 11 in the -X direction (negative X direction) enters each light receiver with a considerable solid angle; <2> When each active optical element 21 is a light emitting element, the light emitted by the light emitting element in the +X direction (positive X direction) is focused by each focusing mirror 35 with a considerable solid angle before entering each waveguide element 11 of the waveguide array unit 10; <3> When each active optical element 21 is a light emitting element, the light emitted by the light emitting element into the adjacent optical channel 50 will be absorbed by each light absorber 60 or 60a formed of light-absorbing material, so it will not enter the adjacent optical channels 50 and generate crosstalk.
[0116] refer to Figure 10 When each waveguide element 11 in the waveguide array unit 10 of this invention is an optical fiber, each waveguide element 11 includes a core 111 and an outer cladding layer 112 covering the periphery of the core 111. Furthermore, a light absorber 60a formed using a light-absorbing material (e.g., light-absorbing ceramic) is provided between each waveguide element 11. The optical axis 12 of each waveguide element 11 is parallel to the X-axis direction, and each waveguide element 11 faces the side of the optical active element array unit 20 (e.g.,...). Figure 1 As shown, a first YZ plane 14 perpendicular to the X-axis direction is formed at one end of the surface 13. That is, the first YZ plane 14 is perpendicular to the X-axis direction and the optical axis 12 of each waveguide element 11.
[0117] When each photoactive element 21 in the photoactive element array unit 20 of this invention is an edge-emitting semiconductor light source, the communication optical connection device 1 of this invention includes at least one optical channel 50, and each optical channel 50 is spaced apart on the YZ plane in the XYZ three-dimensional space to form a one-dimensional array. The structural form of the photoactive element array unit 20 and its connection with the mother carrier unit 30 are different from those when the photoactive element array unit 20 is a surface-emitting semiconductor light source (e.g., ...). Figure 1 , Figure 8 , Figure 9A , Figure 9B The structure shown is similar to that of edge-emitting or surface-emitting semiconductor light sources, but regardless of whether each active light element 21 uses an edge-emitting or surface-emitting semiconductor light source, the main technical features are the same. The following will refer to... Figures 11 to 22 When each of the active light elements 21 of this utility model is an edge-emitting semiconductor light source, the structural form of the active light element array unit 10 and its connection with the mother carrier unit 30 will be described one by one. Only the differences in the structural form will be described, while the similarities in the structural form will not be repeated.
[0118] refer to Figure 11 , Figure 12 The mother carrier unit 70 includes at least one sub-carrier 71, and each sub-carrier 71 is spaced apart on the YZ plane in the XYZ three-dimensional space to form a one-dimensional array. Each sub-carrier 71 has a focusing mirror with an optical axis 72, and a first surface 73 and a second surface 74 along the X-axis. The first surface 73 of each sub-carrier 71 is close to each optical active element 81 in the optical active array unit 80. Figure 19 , Figure 20As shown, each second surface 74 is located on the opposite side of each first surface 73 along the X-axis and forms a focusing mirror (as shown). Figure 9A Each focusing mirror 35 shown has a groove 75 formed on its first surface 73, and multiple conductive connecting surfaces 71a are arranged at intervals along the Y-axis on the bottom surface of each groove 75 (as shown in the diagram). Figure 7D The conductive connecting surfaces 31a and the corresponding multiple conductive connecting surfaces 71b shown are as follows: Figure 7D Each conductive connecting surface 31b is shown.
[0119] See again Figure 13 , Figure 14 Semiconductor manufacturing technology can be used to fabricate an 80a epitaxial substrate for an active optical device (as shown in the image). Figure 8 The photoactive element array unit 80 of the one-sided semiconductor light source is formed on the epitaxial substrate 20a shown. Figure 8 The photoactive element array unit 20 shown is used to form a composite 80b that combines an epitaxial substrate 80a and a photoactive element array unit 80 (as shown). Figure 8 The diagram shows a combination 20b of an epitaxial substrate 20a and an active element array unit 20 for a surface-emitting semiconductor light source. This active element array unit 80 includes at least one active element 81, and the active elements 81 are spaced apart on the YZ plane in the XYZ three-dimensional space to form a one-dimensional array. Figure 13 As shown, the optical axes 82 of each optical active element 81 (as shown) Figure 1 The optical axes 22) of the active element array unit 20 of the surface-emitting semiconductor light source shown are parallel to the X-axis direction, as... Figure 14 As shown; each photoactive element 81 includes a photoelectric conversion material 813 and conductive connecting surfaces 81a and 81b. See also... Figure 15 , Figure 16 The assembly 80b, which combines the epitaxial substrate 80a and the photoactive element array unit 80, is fixedly mounted in the groove 75 provided on the first surface 73 of each sub-sub-substrate 71 (as shown in the image). Figure 9A Alternatively, as shown in step S4-1, the combined epitaxial substrate 20a and the array unit 20 of the active photoelectric element are aligned and positioned with the parent substrate unit 30 along the X-axis direction in the XYZ three-dimensional space and connected as a whole, so that the conductive connecting surfaces 81a and 81b of each active photoelectric element 81 are respectively connected to the conductive connecting surfaces 71a and 71b of each sub-sub-substrate 71, thereby enabling each active photoelectric element 81 to achieve the light emission function.
[0120] See again Figure 17 , Figure 18If the epitaxial carrier 80a is removed from the assembly 80b that combines the carrier 80a and the active optical element array unit 80, then the active optical element array unit 80 and the parent carrier unit 70 will be mutually aligned and connected as a whole along the X-axis direction in the XYZ three-dimensional space (as shown in the image). Figure 9A As shown), the optical axes 82 of each optical active element 81 in the optical active element array unit 80 are coupled one-to-one with the optical axes 72 of the focusing mirrors of each sub-carrier plate 71 in the mother carrier plate unit 70, and the light-emitting edge 83 of the edge-emitting semiconductor light source of each optical active element 81 is flush with the first surface 73 of each sub-carrier plate 71, which is defined here as a second YZ plane 84 (as shown). Figure 1 The second YZ plane 24 shown is perpendicular to the X-axis direction and the optical axis 82 of each active optical element 81.
[0121] refer to Figure 19 , Figure 20 Then, a waveguide array unit 10 is combined with the optical active element array unit 80 and the mother carrier unit 70 (80, 70) and aligned and connected along the X-axis direction in the XYZ three-dimensional space to form another embodiment of the optical connection device of this utility model (as shown in the figure). Figure 9C (or as shown in step S4-3), wherein the optical axes 12 of each waveguide element 11 in the waveguide array unit 10 are coupled one-to-one to the optical axes 82 of each optical active element 81 in the optical active element array unit 80 and the optical axes 72 of each focusing mirror of each sub-carrier plate 71 in the mother carrier plate unit 70; wherein the first YZ plane 14 is parallel and close to the second YZ plane 84, and all gaps between the first YZ plane 14 and the second YZ plane 84, including the space of the groove 75 formed on the mother carrier plate unit 70, are filled with a filling material 40 and can also be used as an adhesive, and the optical index of the filling material 40 is greater than that of air, and the filling material 40 does not absorb the light signals of each optical channel, so that there is no air gap or vacuum gap between the waveguide array unit 10, the optical active array unit 80 and the mother carrier plate unit 70.
[0122] Light beams tend to spread laterally along their transmission path, such as Gaussian beams or point light diffusion. Therefore, in traditional optical communication connections, a focusing lens is needed to focus the diffused light from the light source onto the core of the waveguide. In the optical communication connection device 1 of this invention, if the YZ cross-sectional width of the photoelectric conversion material 213 or 813 of the light source of each active optical element 21 or 81 is greater than the YZ cross-sectional width of the core 111 of the corresponding waveguide element 11 (light source end), then a significant portion of the light emitted by the photoelectric conversion material 213 or 813 of the light source of each active optical element 21 or 81 will be unable to enter the core 111 of the waveguide element 11 for transmission. Therefore, according to the structural design of the communication optical connection device 1 of this utility model, when each optical active element 21 or 81 is a light source, the YZ cross-sectional diameter of the photoelectric conversion material 213 or 813 of the light source of each optical active element 21 or 81 can be specially designed or selected to be smaller than the YZ cross-sectional diameter of the core 111 of the corresponding waveguide element 11. In this way, the optical coupling efficiency of the communication optical connection device 1 of this utility model can be improved. (See reference below.) Figures 23 to 29 The following are explanations of each.
[0123] refer to Figures 23 to 25 , Figure 23 for Figure 8 The diagram shows a partially enlarged XY-plane schematic of the active optical element 21. The active optical element 21 is a surface-emitting light source chip, such as a light-emitting diode (LED) or a vertical-cavity surface-emitting laser (VCSEL), but not limited thereto. The active optical element 21 has an optical axis 22, and its structure includes a surface-emitting light source chip 211, a photoelectric conversion material (PN junction region) 213, and conductive contact and solder surfaces 21a and 21b, as shown below. Figure 23 and Figure 24 As shown, the photoelectric conversion material 213 is typically circular in the YZ cross section, such as... Figure 25 As shown, in terms of the structural design of the communication optical connection device 1 of this utility model, the YZ cross-sectional diameter Ds of the light-emitting material 213 of the optical active element 21 is specially selected or designed to be smaller than the YZ cross-sectional diameter Dw of the core 111 of the corresponding waveguide element 11, such as... Figure 29 As shown, the light emitted by the photoelectric conversion material 213 of each active optical element 21 will mostly enter the core 111 of each waveguide element 11 for transmission, such as... Figure 29 As shown, this improves optical coupling efficiency.
[0124] See again Figures 26 to 28 , Figure 26 for Figure 13The diagram shows a partially enlarged XY-plane schematic of the active optical element 81. The active optical element 81 is an edge-emitting light source chip, such as, but not limited to, FP lasers, DFB lasers, or DBRs. The active optical element 81 has an optical axis 82. Its structure includes an edge-emitting light source chip 811, a photoelectric conversion material (PN junction region) 813, and conductive connecting surfaces 81a and 81b. Figure 26 and Figure 27 As shown, the luminescent material 813 is typically rectangular in the YZ section, such as... Figure 26 As shown, the cross-sectional diameter in the Y direction is larger than that in the Z direction, and the light emission direction is mainly in the X-axis and -X-axis directions. According to the structural design of the communication optical connection device 1 of this utility model, the YZ cross-sectional diameter De of the photoelectric conversion material 813 of the optical active element 81 is specifically selected or designed to be smaller than the YZ cross-sectional diameter Dw of the core 111 of the corresponding waveguide element 11, such as... Figure 29 As shown, the light emitted by the light-emitting material 813 of each active optical element 81 will mostly enter the core 111 of each waveguide element 11 for transmission, such as... Figure 29 As shown, this improves the optical coupling efficiency of the communication optical connection device 1 of this utility model.
[0125] refer to Figure 30A , Figure 30B They are respectively Figure 20 Schematic diagram of the section (XZ plane) with section line 30-30 (but the symbols are not in accordance with the diagram). Figure 20 The original symbols were changed to Figure 1 or Figure 5A , Figure 5B (symbols), used here Figure 30A , Figure 30B To further illustrate the definition of the first YZ plane 14 (refer to paragraph 0025), the second YZ plane 24 (refer to paragraph 0026), and their respective extension planes 14a and 24a (refer to paragraphs 0070 and 0071) of this utility model. In the communication optical connection device 1 of this utility model, the surface 23 formed by the surface of each optical active element 21 facing the waveguide array unit 10 may, broadly speaking, be uneven, such as... Figure 30A As shown, therefore, this utility model further defines the plane closest to the waveguide array unit 10 on the surface 23 and perpendicular to the X-axis direction as the second YZ plane 24, as follows. Figure 30B As shown, the second YZ plane 24 is perpendicular to the X-axis direction and the optical axis 22 of each optical active element 21. Similarly, the surface 13 formed by the surface of each waveguide element 11 facing the optical active element array unit 20 may also be uneven in a general sense, such as... Figure 30A or Figure 31A , Figure 31B As shown, therefore, this utility model further defines the plane on the surface 13 that is closest to the side of the photoactive element array unit 20 and perpendicular to the X-axis direction as the first YZ plane 14, as follows. Figure 30B As shown, the first YZ plane 14 is perpendicular to the X-axis direction and the optical axis 12 of each waveguide element 11, as... Figure 30B As shown. Furthermore, due to Figure 30A The uneven structure of surface 13 shown is not specifically depicted, therefore Figure 30A The surface 13 shown is almost equivalent to Figure 30B The first YZ plane 14 shown is not intended to limit the present invention.
[0126] refer to Figure 30A , Figure 30B And at the same time refer to Figure 5A , Figure 5B As described in paragraphs 0070 and 0071, in accordance with semiconductor practice of manufacturing this utility model, in order to facilitate the calibration operation of the communication optical connection device 1, the second YZ plane 24 of the photoactive element array unit 20 can extend in the (Y, Z) direction outside the region of each photoactive element 21 to form a second extension plane 24a, and at least one alignment key M5 made of magnetic material is provided on the second extension plane 24a. (See reference...) Figure 5B The first YZ plane 14 of the waveguide array unit 10 can extend in the (Y, Z) direction outside the region of each waveguide element 11 to form a first extension plane 14a, and at least one alignment key M6 (not shown) made of magnetic material is provided on the first extension plane 14a, wherein each alignment key M5 and M6 has opposite magnetic properties that attract each other. When the alignment keys M5 provided on the second extension plane 24a and the alignment keys M6 provided on the first extension plane 14a are aligned with each other in the (Y, Z) coordinates, the optical axes 12 of each waveguide element 11 in the waveguide array unit 10 and the optical axes 22 of each photoactive element 21 in the photoactive element array unit 20 will also be aligned with each other. This is beneficial to the semiconductor manufacturing practice and calibration operation of this invention.
[0127] In addition, refer to Figure 31A , Figure 31BThe waveguide array unit 10 extends in the (Y, Z) direction beyond the area of each waveguide element 11 to form a first extension plane 14a, and the first extension plane is regarded as the first YZ plane. In this way, the surface 13 of the area of each waveguide element 11 in the waveguide array unit 10 can be a distance away from the side of each optical active element 21 from the first extension plane 14a, thereby avoiding damage to each optical active element 21 caused by contact between the waveguide array unit 10 and the optical active element array unit 20 when they are calibrated and positioned. Similarly (but not shown), the optical active element array unit 20 extends in the (Y, Z) direction beyond the region of each optical active element 21 to form a second extension plane 24a, and further regards the second extension plane 24a as the second YZ plane 24; in this way, the surface 23 of the region of each optical active element 21 in the optical active element array unit 20 can be a distance away from the waveguide element 11 side from the second extension plane 24a, thereby avoiding damage to each optical active element caused by contact between the waveguide array unit 10 and the optical active element array unit 20 when they are calibrated and positioned.
[0128] refer to Figure 32 and Figure 34 In the waveguide element array unit 10, the light absorber 60a between two adjacent waveguide elements 11 and facing the end of the optical active element array unit 20 is made of a thermally conductive material 60b with a high thermal conductivity. The thermally conductive material 60b includes diamond, aluminum nitride, silicon carbide, graphite, but is not limited thereto. This is used to conduct heat to each optical active element 21 to ensure the light emission quality of each optical active element 21.
[0129] refer to Figures 32 to 35 In the waveguide element array unit 10, the light absorber 60a between two adjacent waveguide elements 11 and facing the active element array unit 20 is constructed using a thermoelectric cooling structure (Thermal Electric Cooler / TE Cooler) 60c. This is used to control the temperature of each active photoelectric element 21 to ensure the light emission quality of each active photoelectric element. The thermoelectric cooling structure (Thermal Electric Cooler / TE Cooler) 60c consists of two thermally conductive material layers 601 spaced apart along the X-axis (e.g., ...). Figure 34 As shown), two conductive material layers 602 are respectively attached to the inner side of each thermally conductive material layer 601, and multiple P-type electrodes 603 and N-type electrodes 604 are arranged in an alternating manner between the two conductive material layers 602 (e.g. Figure 35 As shown) and an insulating material layer 605 fills the gap between the P and N electrodes (as shown). Figure 35As shown in the figure, since this thermoelectric cooling structure (TE Cooler) is existing technology, its function will not be described in detail here.
[0130] The above are merely preferred embodiments of the present utility model and are illustrative rather than restrictive. Those skilled in the art will understand that many changes, modifications, and even equivalent alterations can be made to the present utility model within the spirit and scope defined by the claims, but all such changes will fall within the protection scope of the present utility model.
Claims
1. A communication optical connection device, comprising, sequentially along the X-axis in a three-dimensional XYZ space, a waveguide array unit, an optical active element array unit, and a mother carrier unit, wherein each unit is mutually calibrated and positioned and connected as a whole, characterized in that: The waveguide array unit includes at least one waveguide element and each waveguide element is spaced apart on the YZ plane in the XYZ three-dimensional space to form an array. The optical axis of each waveguide element is parallel to the X-axis direction. The surface of each waveguide element facing and closest to the side of the optical active element array unit and the plane closest to the side of the optical active element array unit and perpendicular to the X-axis direction is defined as a first YZ plane. That is, the first YZ plane is perpendicular to the X-axis direction and each optical axis of each waveguide element. The optical active element array unit includes at least one optical active element, and each optical active element is spaced apart on the YZ plane in the XYZ three-dimensional space to form an array. The optical axis of each optical active element is parallel to the X-axis direction. The surface of each optical active element facing the waveguide array unit side and the plane closest to the waveguide array unit side and perpendicular to the X-axis direction is defined as a second YZ plane. That is, the second YZ plane is perpendicular to the X-axis direction and each optical axis of each optical active element. The mother carrier unit includes at least one sub-carrier, and each sub-carrier is arranged at intervals on the YZ plane in the XYZ three-dimensional space to form an array. Each sub-carrier has a positioning reference axis parallel to the X-axis direction, and each sub-carrier has a first surface and a second surface along the X-axis direction. Each first surface of each sub-carrier faces and is close to or connected to each of the optical active elements in the optical active element array unit, and each second surface is located on the opposite side of each first surface along the X-axis direction. The first YZ plane is parallel to and close to the second YZ plane, and any gap between the first YZ plane and the second YZ plane is filled with a filling material, so that there is no air gap or vacuum gap between the waveguide array unit and the optical active element array unit. In the waveguide array unit, each optical axis of each waveguide element is coupled one-to-one with each optical axis of each optical active element in the optical active element array unit and each positioning reference axis of each sub-carrier in the mother carrier unit, so that each waveguide element, each optical active element and each sub-carrier can be sequentially connected along the X-axis to form an optical channel, thereby enabling the communication optical connection device to include at least one optical channel and each optical channel to be spaced apart on the YZ plane in the XYZ three-dimensional space to form an array.
2. The communication optical connection device as described in claim 1, characterized in that, Any gaps between each active optical element and each subcarrier are filled with a filler material, and the optical index of the filler material is greater than that of air, so that there are no air gaps or vacuum gaps between each active optical element and each subcarrier, so that each waveguide element, each active optical element and each subcarrier can be sequentially connected along the X-axis to form an optical channel without any air gaps or vacuum gaps.
3. The communication optical connection device as described in claim 1, characterized in that, The filler material includes gel fillers and liquid fillers, and the optical index of the filler material is greater than that of air.
4. The communication optical connection device as described in claim 3, characterized in that, The optical index of the filling material is between the optical index of the core of each waveguide element and the optical index of the photoelectric conversion material of each photoactive element.
5. The communication optical connection device as described in claim 1, characterized in that, When the filler material is a gel-like filler, it is used as an adhesive so that after curing, the waveguide array unit and the optical active element array unit can be positioned and connected together.
6. The communication optical connection device as described in claim 1, characterized in that, When the filling material is a liquid filler, the periphery of the gap between the waveguide array unit and the optical active element array unit is sealed and covered by an outer shell, so that the liquid filler can flow freely in the gap between the waveguide array unit and the optical active element array unit within the internal space of the outer shell to provide heat dissipation for the optical active element array unit.
7. The communication optical connection device as described in claim 1, characterized in that, The material of each subcarrier has a low absorption rate for the optical signal of each optical channel, wherein the material of each subcarrier includes semiconductor, glass, acrylic or transparent ceramic.
8. The communication optical connection device as described in claim 1, characterized in that, The material of each subcarrier and each photoactive element is a thermally conductive material with a high thermal conductivity, including diamond, aluminum nitride, silicon carbide, graphite, or transparent ceramic.
9. The communication optical connection device as described in claim 1, characterized in that, Each of the second surfaces of each of the sub-carriers in the mother carrier unit is provided with a reflector.
10. The communication optical connection device as described in claim 9, characterized in that, The reflector is a focusing reflector, including a concave reflector, a Fresnel reflector, or a Grating reflector, wherein the optical axis of each focusing reflector is coupled to each positioning reference axis of each subcarrier, each optical axis of each active optical element, and each optical axis of each waveguide element.
11. The communication optical connection device as described in claim 1, characterized in that, A light absorber made of light-absorbing material is provided between two adjacent waveguide elements, so that each light absorber can absorb light from the adjacent optical channel to avoid interference noise from the optical signal of the adjacent optical channel to the optical signal of the optical channel.
12. The communication optical connection device as described in claim 11, characterized in that, The light absorber between two adjacent waveguide elements in the waveguide element array unit and facing the end of the optical active element array unit is made of a thermally conductive material with a high thermal conductivity, including diamond, aluminum nitride, silicon carbide or graphite, so as to conduct heat to each optical active element to ensure the light emission quality of each optical active element.
13. The communication optical connection device as described in claim 1, characterized in that, The light absorber between two adjacent waveguide elements in the waveguide element array unit and facing one end of the active element array unit is a thermoelectric cooling structure, thereby controlling the temperature of each active element to ensure the light emission quality of each active element.
14. The communication optical connection device as described in claim 1, characterized in that, A light absorber made of light-absorbing material is provided between two adjacent active optical elements, so that each light absorber can absorb light from the adjacent optical channel to avoid interference noise from the light signal of the adjacent optical channel to the light signal of the optical channel.
15. The communication optical connection device as described in claim 1, characterized in that, A light absorber made of light-absorbing material is provided between two adjacent subcarrier plates, so that each light absorber can absorb light from the adjacent optical channel to avoid interference noise from the optical signal of the adjacent optical channel to the optical signal of the optical channel.
16. The communication optical connection device as described in claim 1, characterized in that, Each of the active optical elements in the active optical element array unit is a surface-emitting light source or a photodetector, and the communication optical connection device includes at least one optical channel, and each optical channel is arranged at intervals on the YZ plane in the XYZ three-dimensional space to form a two-dimensional array.
17. The communication optical connection device as claimed in claim 1, characterized in that, Each of the active optical elements in the active optical element array unit is a side-emitting semiconductor light source, and the communication optical connection device includes at least one optical channel, and each optical channel is arranged at intervals on the YZ plane in the XYZ three-dimensional space to form a one-dimensional array.
18. The communication optical connection device as claimed in claim 1, characterized in that, The YZ cross-sectional width of the photoelectric conversion material of each active optical element is smaller than the YZ cross-sectional width of the core of the corresponding waveguide element, so that most of the light emitted by the photoelectric conversion material of each active optical element can enter the core of each waveguide element for transmission, thereby improving the optical coupling efficiency of the communication optical connection device.
19. The communication optical connection device as claimed in claim 1, characterized in that, Each waveguide element in the waveguide array unit includes an optical fiber, a waveguide, or a gradient refractive index lens in the form of a waveguide.
20. The communication optical connection device as described in claim 1, characterized in that, The waveguide array unit extends in the Y and Z directions outside the region of each waveguide element to form a first extension plane, and the first extension plane is regarded as the first YZ plane; wherein the surface of the region of each waveguide element in the waveguide array unit is a distance away from each optical active element relative to the first extension plane, so as to avoid damage to each optical active element caused by contact between the waveguide array unit and the optical active element array unit during calibration and positioning.
21. The communication optical connection device as described in claim 1, characterized in that, The optical active element array unit extends in the Y and Z directions outside the region of each optical active element to form a second extension plane, and the second extension plane is regarded as the second YZ plane; wherein the surface of the region of each optical active element in the optical active element array unit is a distance away from each waveguide element relative to the second extension plane, so as to avoid damage to each optical active element caused by contact between the waveguide array unit and the optical active element array unit during calibration and positioning.
22. The communication optical connection device as described in claim 1, characterized in that, The first YZ plane defined on the waveguide array unit also extends outward in the Y-axis and Z-axis directions of each waveguide element to form a first extension plane; wherein the second YZ plane defined on the optical active element array unit also extends outward in the Y-axis and Z-axis directions of each optical active element to form a second extension plane.
23. The communication optical connection device as described in claim 22, characterized in that, At least one alignment mark is provided on the first extension plane, and at least one alignment mark is provided on the second extension plane; wherein when each alignment mark provided on the second extension plane and each alignment mark provided on the first extension plane are aligned with each other in the Y-axis and Z-axis coordinates, each optical axis of each waveguide element in the waveguide array unit is aligned with each optical axis of each optical active element in the optical active element array unit, thereby facilitating the calibration and positioning operation between the waveguide array unit and the optical active element array unit.
24. The communication optical connection device as described in claim 23, characterized in that, The alignment marks provided on the first extension plane and the second extension plane are made of magnetic material, and the magnetic alignment marks on the first extension plane and the corresponding magnetic alignment marks on the second extension plane are opposite magnetic poles that attract each other.