Millimeter wave broadband planar omnidirectional antenna

Abstract

A radiation layer comprises a radiation body, a 50 ohm feed line, an L-shaped microstrip line and a rectangular metal patch, the radiation body comprises a rectangular radiation part and two trapezoidal radiation parts, and the two trapezoidal radiation parts are respectively attached to two transverse side edges of the rectangular radiation part. The transverse side edges of the rectangular radiation parts coincide with the bottom edges of the trapezoidal radiation parts, the top edges of the trapezoidal radiation parts are arranged away from the rectangular radiation parts, the two trapezoidal radiation parts are symmetrical about the rectangular radiation parts, the 50-ohm feeder line is arranged on one longitudinal side edge of each rectangular radiation part, and the L-shaped microstrip line and the rectangular metal patch are arranged on the two sides of the 50-ohm feeder line respectively. And gaps are formed between the L-shaped microstrip line and the 50-ohm feeder line and between the rectangular metal patch and the 50-ohm feeder line. The millimeter wave broadband planar omnidirectional antenna has the advantages of in-band notch and high selectivity, and can effectively suppress in-band interference and efficiently utilize spectrum resources.

Description

TECHNICAL FIELD

[0001] The utility model relates to antenna technical field especially relates to a millimeter wave wideband plane omnidirectional antenna. BACKGROUND

[0002] Because millimeter wave wideband plane omnidirectional antenna has the advantages such as high transmission rate, low cost, light weight, simple design, high data transmission rate, easy to integrate with other components, has received the extensive attention and in-depth research of the scholars and engineers in the industry.However, the millimeter wave wideband plane omnidirectional antenna reported at present, often cannot have band-notched and high selectivity simultaneously, cannot effectively suppress the in-band interference and efficiently utilize the frequency band resources, limits its use on modern wireless communication terminal. SUMMARY

[0003] In view of the above-mentioned deficiencies of prior art, the purpose of the utility model is to provide a millimeter wave wideband plane omnidirectional antenna with band-notched and high selectivity.

[0004] To achieve the above-mentioned purpose, the utility model adopts the technical scheme that:

[0005] A kind of millimeter wave wideband plane omnidirectional antenna, including radio frequency ground layer, dielectric layer and radiating layer that are sequentially stacked in vertical direction, the radiating layer includes radiator, 50 ohm feeder, L type microstrip line and rectangular metal patch, the radiator includes rectangular radiation part and two trapezoidal radiation parts, two the trapezoidal radiation part is respectively pasted in the two side edges of the rectangular radiation part transversely, the side edge of the rectangular radiation part transversely and the bottom of the trapezoidal radiation part coincide, the top of the trapezoidal radiation part is away from the rectangular radiation part setting, two the trapezoidal radiation part is about the rectangular radiation part symmetry, the 50 ohm feeder is set to one side of the rectangular radiation part longitudinally, the L type microstrip line and the rectangular metal patch are respectively set to the two sides of the 50 ohm feeder, and the L type microstrip line and the 50 ohm feeder, the rectangular metal patch and the 50 ohm feeder between the 50 ohm feeder all have gap.

[0006] Optionally, the rectangular metal patch is parallel to the 50 ohm feeder, the L type microstrip line is composed of vertical setting horizontal edge and vertical edge, the horizontal edge is parallel to the 50 ohm feeder, the vertical edge is away from the radiator setting, and the vertical edge extends to the direction away from the 50 ohm feeder.

[0007] Optionally, the radiator, the 50 ohm feeder and the radio frequency ground layer are about the horizontal direction transverse center line of the dielectric layer symmetry.

[0008] Optionally, the projection of the radio frequency ground layer in vertical direction is located on the side where the 50 ohm feeder is provided on the radiator.

[0009] Optionally, the 50-ohm feeder line, the L-shaped microstrip line and the rectangular metal patch are all perpendicular to the side edge of the longitudinal direction of the rectangular radiation part.

[0010] Optionally, the radiation body is octagonal.

[0011] Optionally, the radiation body is integrally arranged.

[0012] Optionally, the dielectric constant of the dielectric layer is 3.38, the dielectric loss is 0.0022, and the thickness is 0.2mm; the thicknesses of the radio frequency ground layer and the radiation layer are both 0.035mm.

[0013] Optionally, the specific parameter settings are as follows:

[0014] L A = 11.5mm, L A is the length of the dielectric layer;

[0015] W A = 11.0mm, W A is the width of the dielectric layer and the width of the radio frequency ground layer;

[0016] L G = 3.84mm, L G is the length of the radio frequency ground layer;

[0017] L P = 7.0mm, L P is the length of the rectangular radiation part and the length of the bottom edge of the trapezoidal radiation part;

[0018] L T = 3.0mm, L T is the length of the top edge of the trapezoidal radiation part;

[0019] H P = 4.4mm, H P is the height of the rectangular radiation part;

[0020] H T = 2.3mm, H T is the height of the trapezoidal radiation part;

[0021] L1 = 2.65mm, L1 is the length of the rectangular metal patch;

[0022] L2 = 2.6mm, L2 is the length of the vertical edge of the L-shaped microstrip line;

[0023] L3 = 0.4mm, L3 is the length of the horizontal edge of the L-shaped microstrip line;

[0024] W1=0.5mm, W1 is the width of the rectangular metal patch;

[0025] W2=0.1mm, W2 is the width of the L-shaped microstrip line;

[0026] S1=0.1mm, S1 is the distance between the rectangular metal patch and the 50-ohm feeder line;

[0027] S2=0.03mm, S2 is the distance between the L-shaped microstrip line and the 50-ohm feeder line;

[0028] L F =4.0mm, L F is the length of the 50-ohm feeder line;

[0029] W F =0.4mm, W F is the width of the 50-ohm feeder line.

[0030] The millimeter wave broadband planar omnidirectional antenna has the advantages of in-band wave trapping and high selectivity, can effectively suppress in-band interference and efficiently utilize frequency spectrum resources. BRIEF DESCRIPTION OF DRAWINGS

[0031] Figure 1 Fig. 3 shows a side view of the millimeter wave broadband planar omnidirectional antenna of the embodiment of the present application;

[0032] Figure 2 Fig. 4 shows a front view of the millimeter wave broadband planar omnidirectional antenna of the embodiment of the present application;

[0033] Figure 3 Fig. 5 shows a back view of the millimeter wave broadband planar omnidirectional antenna of the embodiment of the present application;

[0034] Figure 4 Fig. 6 shows a front direction layout of the millimeter wave broadband planar omnidirectional antenna of the embodiment of the present application;

[0035] Figure 5 Fig. 7 shows a back direction layout of the millimeter wave broadband planar omnidirectional antenna of the embodiment of the present application;

[0036] Figure 6 Fig. 8 shows an enlarged schematic view of the L-shaped microstrip line in the back direction layout of the millimeter wave broadband planar omnidirectional antenna of the embodiment of the present application;

[0037] Figure 7 Fig. 9 shows a reflection coefficient simulation result of the millimeter wave broadband planar omnidirectional antenna of the embodiment of the present application;

[0038] Figure 8The maximum gain and radiation efficiency simulation results of the millimeter wave broadband planar omnidirectional antenna are shown in the embodiment of the utility model;

[0039] Figure 9 The radiation pattern of the millimeter wave broadband planar omnidirectional antenna at 9.0GHz is shown in the embodiment of the utility model;

[0040] Figure 10 The radiation pattern of the millimeter wave broadband planar omnidirectional antenna at 21.0GHz is shown in the embodiment of the utility model;

[0041] Figure 11 The radiation pattern of the millimeter wave broadband planar omnidirectional antenna at 33.0GHz is shown in the embodiment of the utility model.

[0042] Label explanation:

[0043] 1, radio frequency ground layer; 2, dielectric layer; 3, radiation layer; 31, radiator; 32, 50 ohm feed line; 33, L-shaped microstrip line; 34, rectangular metal patch. DETAILED DESCRIPTION

[0044] In order to more clearly understand the technical content, the purposes and effects of the utility model, the utility model is described in detail below in combination with specific embodiments and the drawings. It should be noted that the embodiments and the features in the embodiments of the utility model can be combined with each other without conflict. In the following description, a lot of specific details are set forth in order to fully understand the utility model, and the described embodiments are only a part of the embodiments of the utility model, not all the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the utility model.

[0045] Please refer to Figures 1-11As shown in the utility model embodiment provides a kind of millimeter wave broadband planar omnidirectional antenna, by the radio frequency ground layer 1, dielectric layer 2 and radiation layer 3 of sequentially laminated arrangement along vertical direction, the radio frequency ground layer 1 is attached to the front of the dielectric layer 2, the radiation layer 3 is attached to the back of the dielectric layer 2.The radio frequency ground layer 1 and the radiation layer 3 are metal layer.The radiation layer 3 includes radiator 31, 50 ohm feeder 32, L-shaped microstrip line 33 and rectangular metal patch 34, the radiator 31 includes rectangular radiation part and two trapezoidal radiation parts, two the trapezoidal radiation part is attached to the two side edges of the rectangular radiation part transversely, the side edge of the rectangular radiation part transversely and the bottom of the trapezoidal radiation part coincide, the top of the trapezoidal radiation part is away from the rectangular radiation part setting, two the trapezoidal radiation part is symmetrical about the rectangular radiation part, the whole radiator 31 is octagonal.In a specific embodiment, the radiator 31 is integrally arranged.One end of the 50 ohm feeder 32 is attached to the side edge of the rectangular radiation part longitudinally, and the other end extends away from the radiator 31.The L-shaped microstrip line 33 and the rectangular metal patch 34 are respectively provided on both sides of the 50 ohm feeder 32, and there is a gap between the L-shaped microstrip line 33 and the 50 ohm feeder 32 and between the rectangular metal patch 34 and the 50 ohm feeder 32.The rectangular metal patch 34 is parallel to the 50 ohm feeder 32, the L-shaped microstrip line 33 is composed of a vertical setting horizontal edge and a vertical edge, the horizontal edge is parallel to the 50 ohm feeder 32, the vertical edge is away from the radiator 31, and the vertical edge extends away from the 50 ohm feeder 32.The 50 ohm feeder 32, the L-shaped microstrip line 33 and the rectangular metal patch 34 are all perpendicular to the side edge of the rectangular radiation part longitudinally.The projection of the radio frequency ground layer 1 in the vertical direction is located on the side of the radiator 31 provided with the 50 ohm feeder 32.The radiator 31, the 50 ohm feeder 32 and the radio frequency ground layer 1 are symmetrical about the horizontal center line of the dielectric layer 2 transversely.As Figures 1-3 As shown.

[0046] The millimeter wave broadband planar omnidirectional antenna of the embodiment, the radiation performance is determined by the size parameter of the radiator 31, the bandwidth and the reflection coefficient are determined by the size parameter of the radio frequency ground layer 1 and the size parameter of the radiator 31, the trap center frequency and the isolation at the trap center frequency are determined by the size parameter and position of the L-shaped microstrip line 33, and the high selectivity of the upper passband edge is determined by the size and position of the rectangular radiation patch 34.

[0047] In a specific embodiment, the dielectric constant of the dielectric layer 2 is 3.38, the dielectric loss is 0.0022, and the thickness is 0.2 mm; the metal layer is copper-plated, and the thickness is 0.035 mm. The layout map is as Figures 3-6 As shown. The specific parameter settings are as follows:

[0048] L A = 11.5 mm, L A is the length of the dielectric layer 2;

[0049] W A = 11.0 mm, W A is the width of the dielectric layer 2 and the width of the RF ground layer 1;

[0050] L G = 3.84 mm, L G is the length of the RF ground layer 1;

[0051] L P = 7.0 mm, L P is the length of the rectangular radiation part and the length of the bottom edge of the trapezoidal radiation part;

[0052] L T = 3.0 mm, L T is the length of the top edge of the trapezoidal radiation part;

[0053] H P = 4.4 mm, H P is the height of the rectangular radiation part;

[0054] H T = 2.3 mm, H T is the height of the trapezoidal radiation part;

[0055] L1 = 2.65 mm, L1 is the length of the rectangular metal patch 34;

[0056] L2 = 2.6 mm, L2 is the length of the vertical edge of the L-shaped microstrip line 33;

[0057] L3 = 0.4 mm, L3 is the length of the horizontal edge of the L-shaped microstrip line 33;

[0058] W1 = 0.5 mm, W1 is the width of the rectangular metal patch 34;

[0059] W2 = 0.1 mm, W2 is the width of the L-shaped microstrip line 33;

[0060] S1 = 0.1 mm, S1 is the distance between the rectangular metal patch 34 and the 50-ohm feeder line 32;

[0061] S2 = 0.03 mm, S2 is the distance between the L-shaped microstrip line 33 and the 50-ohm feeder line 32;

[0062] L F = 4.0 mm, L FLength of the 50-ohm feed line 32;

[0063] W F = 0.4mm, W F Width of the 50-ohm feed line 32.

[0064] The notch in the passband of the millimeter wave broadband planar omnidirectional antenna of the embodiment is caused by a transmission zero point introduced by the L-shaped microstrip line, and the high selectivity of the broadband antenna is caused by another transmission zero point introduced by the rectangular patch.

[0065] The notch center frequency f N The relationship between the size parameters L2 and L3 of the L-shaped microstrip line is as follows:

[0066]

[0067] Wherein, ε r is the dielectric constant of the medium.

[0068] The transmission zero point corresponding to the upper passband edge with high selectivity is at a frequency f Z0 The relationship between the length L1 of the rectangular metal patch and the frequency f

[0069]

[0070] The simulation results of the reflection coefficient of the antenna of the embodiment are shown in Figure 7 As can be seen from the figure, the bandwidth range with a standing wave ratio less than 2 is 8.82 to 33.76 GHz, the center frequency is 22.29 GHz, the absolute bandwidth is 24.94 GHz, the relative bandwidth is 111.9%, and the antenna shows a broadband characteristic; there are five transmission poles in the passband, respectively at 10.69 GHz, 13.12 GHz, 17.76 GHz, 23.63 GHz, and 32.49 GHz, which ensure the flatness of the maximum gain and radiation efficiency in the passband; there is a notch in the passband, at 15.91 GHz, which can effectively suppress the in-band notch; there is a transmission zero point at 35 GHz in the vicinity of the upper passband edge, which can improve the selectivity of the antenna.

[0071] As can be seen from the figure, the bandwidth range with a standing wave ratio less than 2 is 8.82 to 33.76 GHz, the center frequency is 22.29 GHz, the absolute bandwidth is 24.94 GHz, the relative bandwidth is 111.9%, and the antenna shows a broadband characteristic; there are five transmission poles in the passband, respectively at 10.69 GHz, 13.12 GHz, 17.76 GHz, 23.63 GHz, and 32.49 GHz, which ensure the flatness of the maximum gain and radiation efficiency in the passband; there is a notch in the passband, at 15.91 GHz, which can effectively suppress the in-band notch; there is a transmission zero point at 35 GHz in the vicinity of the upper passband edge, which can improve the selectivity of the antenna. Figure 8The simulation results of the maximum gain and the radiation efficiency of the antenna of the embodiment are shown.

[0072] Figures 9-11 The radiation patterns of the antenna of the embodiment at 9.0GHz, 21.0GHz and 33GHz are shown, and it can be seen from the figures that the antenna is an omnidirectional antenna.

[0073] In summary, the millimeter wave broadband planar omnidirectional antenna has the advantages of in-band notch and high selectivity, can effectively suppress in-band interference and efficiently utilize spectrum resources.

[0074] The above description is only an embodiment of the present application, and does not limit the patent range of the present application, so any modification, equivalent change and modification of the above embodiment according to the technical essence of the present application, without departing from the technical solution content of the present application, still belongs to the range of the technical solution of the present application.

Claims

1. A millimeter wave broadband planar omni-directional antenna, comprising a radio frequency ground layer, a dielectric layer and a radiation layer which are sequentially stacked in a vertical direction, characterized in that, The radiation layer comprises a radiator, a 50-ohm feeder, an L-shaped microstrip line and a rectangular metal patch, the radiator comprises a rectangular radiation part and two trapezoidal radiation parts, the two trapezoidal radiation parts are respectively attached to two lateral sides of the rectangular radiation part transversely, the lateral sides of the rectangular radiation part coincide with the bottom sides of the trapezoidal radiation parts, the top sides of the trapezoidal radiation parts are arranged away from the rectangular radiation part, the two trapezoidal radiation parts are symmetrical about the rectangular radiation part, the 50-ohm feeder is arranged on one lateral side of the rectangular radiation part longitudinally, the L-shaped microstrip line and the rectangular metal patch are respectively arranged on two sides of the 50-ohm feeder, and gaps are respectively arranged between the L-shaped microstrip line and the 50-ohm feeder and between the rectangular metal patch and the 50-ohm feeder.

2. The millimeter-wave wideband planar omni-directional antenna according to claim 1, wherein, The rectangular metal patch is parallel to the 50-ohm feeder, the L-shaped microstrip line is composed of a horizontal side and a vertical side arranged perpendicularly, the horizontal side is parallel to the 50-ohm feeder, the vertical side is arranged away from the radiator, and the vertical side extends away from the 50-ohm feeder.

3. The millimeter-wave wideband planar omni-directional antenna according to claim 1, wherein, The radiator, the 50-ohm feeder and the radio frequency ground layer are symmetrical about a transverse center line of the medium layer in a horizontal direction.

4. The millimeter-wave wideband planar omni-directional antenna according to claim 1, wherein, A projection of the radio frequency ground layer in a vertical direction is located on one side of the radiator where the 50-ohm feeder is arranged.

5. The millimeter-wave wideband planar omni-directional antenna according to claim 1, wherein, The 50-ohm feeder, the L-shaped microstrip line and the rectangular metal patch are all perpendicular to the lateral side of the rectangular radiation part longitudinally.

6. The millimeter-wave wideband planar omni-directional antenna according to claim 1, wherein, The radiator is octagonal.

7. The millimeter-wave wideband planar omni-directional antenna according to claim 1, wherein, The radiator is integrally arranged.

8. The millimeter-wave wideband planar omni-directional antenna according to claim 2, wherein, The dielectric constant of the medium layer is 3.38, the dielectric loss is 0.0022, and the thickness is 0.2 mm; the thicknesses of the radio frequency ground layer and the radiation layer are both 0.035 mm.

9. The millimeter-wave wideband planar omni-directional antenna according to claim 8, wherein, Specific parameter settings are as follows: L A = 11.5 mm, L A is the length of the medium layer; W A = 11.0 mm, W A is the width of the dielectric layer and the width of the radio frequency ground layer; L G = 3.84 mm, L G is the length of the radio frequency ground layer; L P = 7.0 mm, L P is the length of the rectangular radiation portion and the length of the base of the trapezoidal radiation portion; L T = 3.0 mm, L T is the length of the top edge of the trapezoidal radiation portion; H P = 4.4 mm, H P is the height of the rectangular radiation portion; H T = 2.3 mm, H T is the height of the trapezoidal radiation portion; L1=2.65 mm, L1 is the length of the rectangular metal patch; L2=2.6 mm, L2 is the length of the vertical side of the L-shaped microstrip line; L3=0.4 mm, L3 is the length of the horizontal side of the L-shaped microstrip line; W1=0.5 mm, W1 is the width of the rectangular metal patch; W2=0.1 mm, W2 is the width of the L-shaped microstrip line; S1=0.1 mm, S1 is the distance between the rectangular metal patch and the 50-ohm feeder; S2=0.03 mm, S2 is the distance between the L-shaped microstrip line and the 50-ohm feeder; L F = 4.0 mm, L F is the length of the 50-ohm feed line; W F = 0.4 mm, W F is the width of the 50-ohm feed line.

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