Diamond-like carbon film low-temperature deposition device

Abstract

The utility model discloses a diamond-like carbon film low-temperature deposition device which comprises a microwave dissociation chamber and a radio frequency dissociation chamber which are communicated with each other, the microwave dissociation chamber is communicated with a gas tank of process gas through a gas pipeline, and the microwave dissociation chamber is connected with a microwave source through a microwave waveguide. The radio frequency dissociation chamber is connected with a radio frequency port of a radio frequency power supply through a radio frequency column, and a wafer carrying table is arranged in the radio frequency dissociation chamber. According to the low-temperature deposition device for the diamond-like carbon film, dissociation of process gas is more sufficient, the content of SP3 bonds of the deposited diamond-like carbon film is increased, the hardness of the deposited diamond-like carbon film is improved, and the deposition uniformity of the diamond-like carbon film is better.

Description

TECHNICAL FIELD

[0001] The utility model relates to diamond like film deposition technical field, especially in kind diamond film low temperature deposition device. BACKGROUND

[0002] Diamond like film is often used as etching hard mask material and passivation layer film material in integrated circuit, and the higher the hardness of diamond like film is, the higher the breakdown voltage is, and the higher the hardness of diamond like film is, the better.

[0003] The diamond like film in integrated circuit manufacturing is usually prepared by chemical vapor deposition, wherein the PECVD deposition process temperature is from conventional 400 DEG C to high temperature 650 DEG C, and the main purpose is to improve the etching resistance of the film, that is, to improve the hardness of the film. With the development of integrated circuit technology, diamond like film with higher hardness and higher breakdown resistance is needed, wherein the amount of sp3 bond in diamond like film determines the hardness of the film, and the sp3 bond content in 400 DEG C PECVD deposited diamond like film is less than 1.0%. As the hardest material in nature, the sp3 bond ratio of diamond is more than 95%, and the sp3 bond in diamond like film is mainly formed by decomposing carbon source by external high energy and recombining it, wherein the external energy is usually heat energy or radio frequency energy. The two methods of synthesizing sp3 bond have fatal shortcomings for the semiconductor industry, that is, high process temperature (>1000 DEG C) and poor uniformity of large area (>4 inches). The temperature in the preparation process of integrated circuit is strictly controlled, and is generally not more than 800 DEG C, or lower heat budget less than 400 DEG C. The radio frequency capacity can be conventional 13.56MHz, 400KHz, 2.45GHz, etc. With the increase of radio frequency, the uniformity of radio frequency in the process chamber is more difficult to control. CONTENT OF THE UTILITY MODEL

[0004] Therefore, the utility model provides a kind of diamond like film low temperature deposition device, dissociation of process gas is more sufficient, improve the content of SP3 bond of the diamond like film of deposition, improve the hardness of the diamond like film of deposition, and the uniformity of diamond like film deposition is better.

[0005] To achieve the above object, the utility model provides the following technical scheme:

[0006] A kind of diamond like film low temperature deposition device, including the microwave dissociation chamber and radio frequency dissociation chamber of intercommunication, the microwave dissociation chamber is communicated with the gas tank of process gas by gas pipeline, the microwave dissociation chamber is connected with microwave source by microwave waveguide, the radio frequency dissociation chamber is connected with the radio frequency port of radio frequency power supply by radio frequency column, wafer stage is provided in the radio frequency dissociation chamber.

[0007] Optionally, the microwave dissociation chamber and the radio frequency dissociation chamber are communicated through a communication pipeline, a uniform gas structure is arranged at a position where the radio frequency dissociation chamber communicates with the communication pipeline, an air inlet end of the uniform gas structure communicates with the communication pipeline, and an air outlet end of the uniform gas structure communicates with an inner cavity of the radio frequency dissociation chamber.

[0008] Optionally, the uniform gas structure comprises a hollow box body, an air inlet is arranged at an air inlet end of the box body, the air inlet communicates with the communication pipeline, and a plurality of air outlet through holes are arranged at an air outlet end of the box body.

[0009] Optionally, the box body is connected to a top of the radio frequency dissociation chamber, a radio frequency column is connected to the box body, and a port of the radio frequency column communicates with a cavity of the box body.

[0010] Optionally, the wafer carrier is arranged on a bottom surface of the radio frequency dissociation chamber, and the box body is arranged opposite to the wafer carrier.

[0011] Optionally, the wafer carrier is an aluminum or ceramic material platform, a heating wire for heating the wafer carrier is arranged in the wafer carrier, and the box body is an aluminum alloy box body.

[0012] Optionally, the wafer carrier is a ceramic material platform, the box body is a ceramic material box body, a radio frequency inductive coupling coil is arranged on a top surface of the radio frequency dissociation chamber, and the radio frequency inductive coupling coil is connected to the box body through a ceramic screw.

[0013] Optionally, an exhaust pipe is arranged at a bottom of the radio frequency dissociation chamber, the exhaust pipe communicates with a vacuum pump, and an air exhaust adjusting valve is arranged on the exhaust pipe.

[0014] Optionally, the gas tank communicates with the microwave dissociation chamber through an air inlet pipe, a gas flow meter and a pneumatic diaphragm valve are arranged on the air inlet pipe.

[0015] Optionally, the air inlet pipe is a stainless steel pipeline.

[0016] From the above technical scheme can be seen, the utility model provides a diamond like carbon film low temperature deposition device, process gas first enters into microwave dissociation chamber, microwave is carried out first microwave dissociation to process gas in microwave dissociation chamber, and the gas after dissociation enters into radio frequency dissociation chamber through uniform gas structure, and in radio frequency dissociation chamber, carries out secondary dissociation to the gas, relative to prior art only adopts one dissociation mode to carry out gas dissociation, improves the dissociation rate of gas, and the gas dissociation is more sufficient, under the process condition of low temperature (less than 400 DEG C), improves the content of SP3 bond of diamond like carbon film on wafer carrier, guarantees the hardness of diamond like carbon film obtained by deposition, improves the uniformity of diamond like carbon film large area deposition simultaneously. BRIEF DESCRIPTION OF DRAWINGS

[0017] In order to more clearly illustrate the technical scheme in the embodiment of the utility model or prior art, the following will briefly introduce the drawing needed to be used in embodiment or prior art description, and obviously, the drawing in the following description is only some embodiments of the utility model, and for ordinary skilled person in the art, other drawings can be obtained according to these drawings without creating labor.

[0018] Figure 1 The structure schematic diagram of diamond like carbon film low temperature deposition device provided for an embodiment of the utility model is shown in the figure.

[0019] Figure 2 The structure schematic diagram of diamond like carbon film low temperature deposition device provided for another embodiment of the utility model is shown in the figure.

[0020] Figure 3 The communication structure schematic diagram of microwave dissociation chamber and uniform gas structure provided for the embodiment of the utility model is shown in the figure.

[0021] Figure 4 The sectional structure schematic diagram of box provided for an embodiment of the utility model is shown in the figure.

[0022] Figure 5 The top view structure schematic diagram of box provided for an embodiment of the utility model is shown in the figure.

[0023] Figure 6 The top view structure schematic diagram of box provided for another embodiment of the utility model is shown in the figure.

[0024] Figure 7 The sectional structure schematic diagram of box provided for another embodiment of the utility model is shown in the figure.

[0025] Figure 8 The sectional structure schematic diagram of box provided for another embodiment of the utility model is shown in the figure. Figure 7 The local enlarged structure schematic diagram of A part in the figure.

[0026] Wherein:

[0027] 1. A gas tank,

[0028] 2. A microwave dissociation chamber,

[0029] 3. A microwave waveguide,

[0030] 4. A microwave source,

[0031] 5. A communication pipeline,

[0032] 6. A uniform gas structure,

[0033] 601. Box, 602. Inlet, 603. Gas outlet, 604. First connecting hole, 605. Sealing ring,

[0034] 7. A radio frequency dissociation chamber,

[0035] 8. A wafer stage,

[0036] 9. A vacuum pump,

[0037] 10. A radio frequency power supply,

[0038] 11. An air inlet pipe,

[0039] 12. An exhaust pipe,

[0040] 13. A radio frequency column,

[0041] 14 Inductive coupling coil. DETAILED DESCRIPTION

[0042] The utility model discloses a kind of diamond-like thin film low-temperature deposition devices, dissociation of process gas is more sufficient, improve the content of SP3 bond of deposited diamond-like thin film, improve the hardness of deposited diamond-like thin film, the uniformity of diamond-like thin film deposition is better.

[0043] The technical solutions in the embodiments of the utility model will be clearly and completely described below with reference to the drawings in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by those skilled in the art without creative labor belong to the protection scope of the utility model.

[0044] Reference Figures 1 to 8The utility model discloses a diamond like carbon film low temperature deposition device, including the microwave dissociation chamber 2 and radio frequency dissociation chamber 7 of intercommunication arrangement, the microwave dissociation chamber 2 and radio frequency dissociation chamber 7 are sequentially arranged. The microwave dissociation chamber 2 is communicated with the gas tank 1 of the process gas by pipeline, and the microwave dissociation chamber 2 is connected with the microwave source 4 through the microwave waveguide 3, and the radio frequency dissociation chamber 7 is connected with the radio frequency port of radio frequency power supply 10 through the radio frequency column 13, and the radio frequency dissociation chamber 7 is provided with wafer carrier 8.

[0045] Among them, the mesa of wafer carrier 8 is used to place the substrate to be plated. The process gas contained in the gas tank 1 is one of CH4, C2H2, C2H4 and C3H6, or a mixture of two or more of them. The radio frequency power supply 10 can generate plasma. Figure 1 And Figure 2 The arrow direction in the figure is the flow direction of the process gas.

[0046] The diamond like carbon film low temperature deposition device of the utility model, the process gas first enters the microwave dissociation chamber 2, and the microwave is carried out first microwave dissociation to the process gas in the microwave dissociation chamber 2, and the dissociated gas enters the radio frequency dissociation chamber 7, and the gas is carried out secondary dissociation in the radio frequency dissociation chamber 7, relative to the prior art only one dissociation mode is used to dissociate the gas, improves the dissociation rate of the gas, and the gas is more fully dissociated, under the process condition of low temperature (less than 400 DEG C), the content of SP3 bond of the diamond like carbon film on the wafer carrier 8 is improved, the hardness of the diamond like carbon film obtained by deposition is guaranteed, and the uniformity of large-area deposition of the diamond like carbon film is improved.

[0047] Specifically, the microwave dissociation chamber 2 and the radio frequency dissociation chamber 7 are communicated through the communication pipeline 5, and the gas in the microwave dissociation chamber 2 flows to the radio frequency dissociation chamber 7 after dissociation through the communication pipeline 5. In order to improve the uniformity of the gas entering the radio frequency dissociation chamber 7, the radio frequency dissociation chamber 7 is provided with a gas uniformizing structure 6 at the position communicated with the communication pipeline 5, the gas inlet end of the gas uniformizing structure 6 is communicated with the communication pipeline 5, the gas outlet end of the gas uniformizing structure 6 is communicated with the inner cavity of the radio frequency dissociation chamber 7, and the gas flowing into the radio frequency dissociation chamber 7 is more uniform by arranging the gas uniformizing structure 6.

[0048] Further, the gas uniformizing structure 6 includes a hollow box 601, as Figure 3 And Figure 4As shown, the gas inlet end of the box 601 is provided with a gas inlet 602, which is communicated with the communication pipeline 5. The gas outlet end of the box 601 is provided with a plurality of gas outlet holes 603, which are uniformly distributed on the gas outlet end surface of the box 601 and are communicated with the chamber of the box 601. The gas outlet end of the uniform gas structure 6 is correspondingly provided on the mesa of the wafer carrier 8 on which the substrate is placed. The correspondence includes the shape and size of the two, so that the gas flowing out of the plurality of gas outlet holes 603 on the box 601 directly flows to the substrate, facilitating the deposition of diamond-like thin film on the substrate.

[0049] In an embodiment, the box 601 is a cylindrical box structure, as shown in Figure 5 As shown, the gas outlet end of the uniform gas structure 6 is circular, and correspondingly, the mesa of the wafer carrier 8 on which the substrate is placed is circular. In another embodiment, the box 601 is a hexagonal box structure, as shown in Figure 6 As shown, the gas outlet end of the uniform gas structure 6 is quadrilateral, and correspondingly, the mesa of the wafer carrier 8 on which the substrate is placed is quadrilateral.

[0050] In order to improve the sealing performance of the gas inlet end of the box 601, a ring-shaped sealing groove is arranged around the gas inlet 602 of the box 601. A sealing ring 605 is arranged in the sealing groove. After the uniform gas structure 6 is installed, the bottom of the sealing ring 605 is pressed against the groove floor of the sealing groove, and the top is pressed against the fixed wall of the radio frequency dissociation chamber 7, thereby realizing reliable sealing of the position of the gas inlet 602.

[0051] The box 601 is connected to the top of the radio frequency dissociation chamber 7. The box 601 is installed in the chamber of the radio frequency dissociation chamber 7 through a first connecting piece, which is a bolt. The radio frequency column 13 is connected to the box 601. The port of the radio frequency column 13 is communicated with the cavity of the box 601, thereby facilitating the dissociation of the gas in the uniform gas structure 6 by the radio frequency power supply 10. In order to facilitate the installation of the box 601, a first connecting through hole 604 is arranged on the top plate of the box 601, and a second connecting through hole is arranged on the radio frequency dissociation chamber 7. The second connecting through hole is correspondingly arranged with the first connecting through hole 604. The first connecting piece is connected in the first connecting through hole 604 and the second connecting through hole.

[0052] In order to facilitate the deposition of diamond-like thin film, the wafer carrier 8 is arranged on the bottom surface of the radio frequency dissociation chamber 7, and the gas outlet end of the box 601 is arranged opposite to the wafer carrier 8.

[0053] In an embodiment, the radio frequency dissociation chamber 7 adopts a capacitive coupling mode for energy transmission. As shown in Figure 1As shown, specifically, the wafer carrier 8 is an aluminum or ceramic platform, and the wafer carrier 8 is internally provided with a heating wire for heating the wafer carrier 8. The box 601 is an aluminum alloy box. When the wafer carrier 8 is made of aluminum, the aluminum wafer carrier 8 serves as a conductive electrode. When the wafer carrier 8 is made of ceramic, the ceramic wafer carrier is internally provided with a heating wire and a conductive metal layer, wherein the heating wire is used for heating, and the conductive metal layer is grounded to serve as one electrode of the capacitive coupling. The lower surface of the box 601 serves as one electrode of the capacitive coupling, and the wafer carrier 8 serves as the other electrode. The box 601 is connected to the radio frequency power supply 10, that is, the uniform gas structure 6 is connected to the radio frequency power supply 10. The box 601 and the wafer carrier 8 form a capacitive structure, and under the action of the radio frequency power supply 10, the process gas is coupled and dissociated.

[0054] In another embodiment, the radio frequency dissociation chamber 7 adopts inductive coupling for energy transmission. Specifically, as shown in Figure 2 The wafer carrier 8 is a ceramic platform, and the box 601 is a ceramic box to avoid affecting the effect of electromagnetic induction. The top surface of the radio frequency dissociation chamber 7 is provided with an inductive coupling coil 14, and the inductive coupling coil 14 is connected to the box 601 through ceramic screws. The inductive coupling coil 14 is circularly distributed above the uniform gas structure 6. The inductive coupling coil 14 and the radio frequency column 13 are connected by bolts. The magnetic field generated by the inductive coupling coil 14 dissociates the process gas.

[0055] In order to facilitate the discharge of process gas or reaction residual gas from the radio frequency dissociation chamber 7, the bottom of the radio frequency dissociation chamber 7 is provided with an exhaust pipe 12, which is communicated with the vacuum pump 9, and the exhaust pipe 12 is provided with an exhaust adjusting valve (not shown in the figure). The exhaust adjusting valve is connected to the controller, and the opening degree of the exhaust adjusting valve is controlled by the controller, so as to control the exhaust flow of the exhaust pipe 12.

[0056] Further, the gas tank 1 is communicated with the microwave dissociation chamber 2 through the gas inlet pipe 11. In order to control the gas flow of the gas inlet pipe 11, a pneumatic diaphragm valve is arranged on the gas inlet pipe 11, the pneumatic diaphragm valve controls the gas flow of the gas inlet pipe 11, the pneumatic diaphragm valve is in communication connection with the controller, and the controller controls the opening degree of the pneumatic diaphragm valve. In order to facilitate monitoring the gas flow of the gas inlet pipe 11, a gas flow meter is further arranged on the gas inlet pipe 11, and the gas flow meter is in communication connection with the controller. Process gas continuously enters the microwave dissociation chamber 2 from the gas tank 1 through the gas inlet pipe 11, and then the process gas in the microwave dissociation chamber 2 enters the radio frequency dissociation chamber 7, and finally is continuously discharged by the vacuum pump 9, that is, the process gas is continuously discharged by the vacuum pump 9 while the process gas is continuously introduced, the opening degrees of the pneumatic diaphragm valve and the exhaust regulating valve are controlled by the controller, the gas amount in the microwave dissociation chamber 2 and the radio frequency dissociation chamber 7 is controlled, and the working cavity pressure in the chambers is maintained. The vacuum pump 9 and the gas tank 1 jointly maintain the working pressure of the microwave dissociation chamber 2 and the radio frequency dissociation chamber 7. The gas inlet pipe 11 is a stainless steel pipeline. In order to facilitate gas inlet, the gas in the gas tank 1 is pumped into the microwave dissociation chamber 2 by a gas pump. The gas pump and the vacuum pump 9 are controlled by the controller.

[0057] The frequency of the microwave source 4 is one of 915MHz, 2.45GHz, 5.8GHz and 24.125GHz. The frequency of the radio frequency power supply 10 is one of 13.56MHz and 27MHz. The process gas can be one of CH4, C2H2, C2H4 and C3H6 or a mixed gas of two or more gases. The deposition temperature of the wafer substrate is 200-500 DEG C.

[0058] The diamond-like film low-temperature deposition device of the utility model uses, process gas enters microwave dissociation chamber 2 through gas inlet pipe 11, after microwave dissociation, gas enters uniform gas structure 6 through communication pipeline 5, and finally enters radio frequency dissociation chamber 7 to carry out secondary dissociation and deposit on the wafer surface placed on wafer carrier 8.

[0059] The diamond-like film low-temperature deposition device of the utility model, process gas is first dissociated by microwave dissociation chamber 2, then dissociation active particles are introduced into radio frequency dissociation chamber 7 to carry out secondary dissociation, the dissociation rate of process gas is improved, then dissociation particles are deposited on the substrate on wafer carrier 8 to form diamond-like film. After process gas is dissociated in microwave dissociation chamber 2, it is connected with uniform gas structure 6 in radio frequency dissociation chamber 7 through communication pipeline 5, wherein uniform gas structure 6 is connected with radio frequency power supply 10 through radio frequency column 13 at the same time, and process gas or reaction residual gas is discharged through exhaust pipe 12.

[0060] The various embodiments in the specification are described in a progressive manner, and each embodiment focuses on the difference from other embodiments. The same or similar parts of each embodiment can be referred to each other.

[0061] The above description of disclosed embodiments enables one of ordinary skill in the art to make or use the application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein can be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A low temperature deposition apparatus for diamond-like carbon films, characterized by, The microwave dissociation chamber and the radio frequency dissociation chamber are communicated through a communication pipeline, a uniform gas structure is arranged at a position where the radio frequency dissociation chamber communicates with the communication pipeline, an air inlet end of the uniform gas structure communicates with the communication pipeline, and an air outlet end of the uniform gas structure communicates with an inner cavity of the radio frequency dissociation chamber.

2. The apparatus for deposition of diamond-like carbon thin films at low temperature according to claim 1, characterized in that, The microwave dissociation chamber and the radio frequency dissociation chamber are communicated through a communication pipeline, a uniform gas structure is arranged at a position where the radio frequency dissociation chamber communicates with the communication pipeline, an air inlet end of the uniform gas structure communicates with the communication pipeline, and an air outlet end of the uniform gas structure communicates with an inner cavity of the radio frequency dissociation chamber.

3. The apparatus for deposition of diamond-like carbon thin films at low temperature according to claim 2, characterized in that, The uniform gas structure comprises a hollow box body, an air inlet is arranged at an air inlet end of the box body, the air inlet communicates with the communication pipeline, and a plurality of air outlet through holes are arranged at an air outlet end of the box body.

4. The apparatus for deposition of diamond-like carbon thin films at low temperature according to claim 3, characterized in that, The box body is connected to a top of the radio frequency dissociation chamber, the radio frequency column is connected to the box body, and a port of the radio frequency column communicates with a cavity of the box body.

5. The apparatus for deposition of diamond-like carbon thin films at low temperature according to claim 4, characterized in that, The wafer carrier is arranged on a bottom surface of the radio frequency dissociation chamber, and the box body is arranged opposite to the wafer carrier.

6. The apparatus for deposition of diamond-like carbon thin films at low temperature according to claim 5, characterized in that, The wafer carrier is an aluminum material or a ceramic material, a heating wire for heating the wafer carrier is arranged in the wafer carrier, and the box body is an aluminum alloy material.

7. The apparatus for deposition of diamond-like carbon thin films at low temperature according to claim 5, characterized in that, The wafer carrier is a ceramic material, the box body is a ceramic material, an inductive coupling coil is arranged on a top surface of the radio frequency dissociation chamber, and the inductive coupling coil is connected to the box body through a ceramic screw.

8. The apparatus for deposition of diamond-like carbon films at low temperature according to claim 1, wherein An exhaust pipe is arranged at a bottom of the radio frequency dissociation chamber, the exhaust pipe communicates with a vacuum pump, and an air exhaust adjusting valve is arranged on the exhaust pipe.

9. The low temperature diamond-like carbon film deposition apparatus according to claim 1, wherein The process gas in the gas tank communicates with the microwave dissociation chamber through an air inlet pipe, a gas flow meter and a pneumatic diaphragm valve are arranged on the air inlet pipe.

10. The apparatus for deposition of diamond-like carbon films at low temperature according to claim 9, characterized in that, The air inlet pipe is a stainless steel pipeline.

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