Plasma etching equipment
By introducing a drive source and a rotating connecting plate into the plasma etching equipment to drive the RF coil to rotate, the problem of insufficient etching uniformity was solved, and the concentric circle distribution of the wafer etching pattern was achieved, thus improving the uniformity and consistency of etching.
Patent Information
- Application Number
- CN202423116142.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-17
- Publication Date
- 2025-12-05
- Estimated Expiration
- 2034-12-17
AI Technical Summary
Existing plasma etching machines have insufficient etching uniformity during wafer etching, resulting in different etching rates in different areas of the wafer, leading to map deviations or abnormalities in certain areas.
By introducing a drive source and a rotating connecting plate into the plasma etching equipment, the radio frequency coil is driven to rotate around the center. Combined with a conductive slip ring or bearing assembly to maintain electrical connection, the uniform rotation of the radio frequency coil is achieved, forming multiple concentric circle etching patterns.
It improves the uniformity of wafer etching, reduces the probability of map edge deviation or abnormality in a certain area, and improves the uniformity and consistency of etching.
Smart Images
Figure CN223638325U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of plasma processing, in particular to a plasma etching device. BACKGROUND
[0002] Inductively Coupled Plasma Etch (ICPE) is a result of the combined action of chemical and physical processes. The basic principle is that, under vacuum low pressure, the radio frequency output of ICP (Inductively Coupled Plasma) radio frequency power supply is output to the annular coupling coil, so that the mixed etching gas in a certain proportion is subjected to coupling glow discharge to generate high-density plasma. Under the action of RF radio frequency of the lower electrode, these plasmas bombard the surface of the substrate, so that the chemical bonds of the semiconductor material in the pattern area of the substrate are broken, and volatile substances are generated with the etching gas to be removed from the substrate in the form of gas through the vacuum pipeline.
[0003] It should be noted that the device for patterning the substrate by using inductively coupled plasma etching is a plasma etching machine, which is also called plasma planar etching machine, plasma etching machine, plasma surface treatment instrument, plasma cleaning system, etc., and is widely used in the semiconductor industry. However, the etching uniformity of the existing plasma etching machine needs to be improved when etching the wafer. CONTENT OF THE INVENTION
[0004] In view of the above problems, the present application provides a plasma etching device to achieve the purpose of improving etching uniformity.
[0005] The specific scheme is as follows:
[0006] A plasma etching device, comprising:
[0007] A plasma reaction chamber for introducing process gas and placing a wafer;
[0008] A radio frequency assembly comprising a radio frequency coil and a radio frequency source, the radio frequency source being configured to provide a radio frequency signal to the radio frequency coil so that the radio frequency coil generates a radio frequency field acting on the process gas to generate plasma;
[0009] A driving source configured to provide a driving force;
[0010] The rotating connecting plate comprises a first component and a second component, wherein one side of the first component away from the second component is used for fixing the radio frequency coil, one end of the second component is fixedly connected with the first component, and the other end is fixedly connected with the driving source through a shaft coupling, and under the driving of the driving source, the radio frequency coil rotates around the center of the radio frequency coil.
[0011] Optionally, the rotating connecting plate is an insulating connecting plate.
[0012] Optionally, the plane where the first component is located and the plane where the second component is located are perpendicular.
[0013] Optionally, the radio frequency assembly further comprises a connecting assembly connecting the radio frequency source and the radio frequency coil.
[0014] The connecting assembly comprises a first connecting part and a second connecting part, the first connecting part is electrically connected with the radio frequency source and fixedly connected during the rotation of the radio frequency coil, and the second connecting part is electrically connected with the radio frequency coil and rotates with the rotation of the radio frequency coil.
[0015] The first connecting part and the second connecting part are rotationally connected, and the first connecting part and the second connecting part are electrically connected.
[0016] Optionally, the connecting assembly comprises a conductive slip ring, the first connecting part comprises a conductive slip ring fixed ring, and the second connecting part comprises a conductive slip ring movable ring.
[0017] Optionally, the first connecting part comprises a first conductive slip ring fixed ring electrically connected with the output end of the radio frequency source and a second conductive slip ring fixed ring electrically connected with the input end of the radio frequency source.
[0018] The second connecting part comprises a first conductive slip ring movable ring electrically connected with the first end of the radio frequency coil and a second conductive slip ring movable ring electrically connected with the second end of the radio frequency coil.
[0019] Optionally, the first conductive slip ring movable ring is electrically connected with the first end of the radio frequency coil through a first coil loop connecting line, and the second conductive slip ring movable ring is electrically connected with the second end of the radio frequency coil through a second coil loop connecting line.
[0020] Optionally, the connecting assembly comprises a bearing assembly.
[0021] Optionally, further comprising:
[0022] A shielding cover is provided between the plasma reaction chamber and the dielectric window for separating the accommodation space of the shielding cover and the accommodation space of the plasma reaction chamber, and at least the radio frequency coil and the connecting assembly are located in the shielding cover.
[0023] An insulating substrate is fixedly connected with the shielding cover, and the first connecting part is fixed on the insulating substrate.
[0024] Optionally, the radio frequency coil has a planar spiral shape or a three-dimensional spiral shape.
[0025] According to the technical scheme, the plasma etching device provided by the application not only includes a plasma reaction chamber and a radio frequency assembly, but also includes a driving source and a rotating connecting plate. The driving source is used to provide a driving force. One end of the rotating connecting plate is fixed with the radio frequency coil, and the other end is fixed with the driving source through a shaft coupling. Under the driving of the driving source, the radio frequency coil in the radio frequency assembly rotates around the center of the radio frequency coil. Therefore, the etching non-uniformity caused by the shape and structure of the radio frequency coil can occur at each position with the same distance to the center of the radio frequency coil. In this way, the etching pattern formed on the etching surface of the wafer is a plurality of concentric circles. The probability of Map edge deviation or abnormality of a certain area of the wafer etching is reduced, and the uniformity of the wafer etching is improved. BRIEF DESCRIPTION OF DRAWINGS
[0026] The above and other features, advantages, and aspects of the present disclosure will become more apparent by describing in detail the following specific embodiments with reference to the attached drawings. Throughout the drawings, the same or similar reference numerals refer to the same or similar elements. It should be understood that the drawings are schematic, and the original and elements are not necessarily drawn according to the scale.
[0027] Figure 1 FIG. 1 is a structural schematic diagram of a traditional plasma etching device;
[0028] Figure 2 FIG. 2 is a schematic diagram of an etching pattern when the wafer etching appears Map edge deviation or abnormality of a certain area;
[0029] Figure 3 FIG. 3 is another schematic diagram of an etching pattern when the wafer etching appears Map edge deviation or abnormality of a certain area;
[0030] Figure 4 FIG. 4 is still another schematic diagram of an etching pattern when the wafer etching appears Map edge deviation or abnormality of a certain area;
[0031] Figure 5 FIG. 5 is a structural schematic diagram of a plasma etching device provided by an embodiment of the application;
[0032] Figure 6 A schematic diagram of a plasma etching apparatus provided in another embodiment of this application;
[0033] Figure 7 This is a schematic diagram of the structure of an radio frequency coil in a plasma etching apparatus provided in an embodiment of this application. Detailed Implementation
[0034] The embodiments of this application will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.
[0035] Various modifications and variations can be made to this application without departing from its spirit or scope, which will be apparent to those skilled in the art. Therefore, this application is intended to cover modifications and variations falling within the scope of the corresponding claims (the claimed technical solutions) and their equivalents. It should be noted that the embodiments provided in this application can be combined with each other without contradiction.
[0036] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments.
[0037] As described in the background section, existing plasma etching machines have room for improvement in etching uniformity when etching wafers.
[0038] like Figure 1 As shown, the etching chamber of the plasma etching machine mainly consists of a plasma reaction chamber 001, a ceramic dielectric window 002, an inlet nozzle 003, a shielding cover 004, an RF coil 005, a gas source 006, an excitation RF power supply 011, a matching network 010, a bias electrode 020, a bias RF power supply 021, a matching network 025, a pressure control valve 023, and a vacuum pump 024. The gas source 006 provides the process gas, which is injected into the plasma reaction chamber 001 through the inlet nozzle 003. Under the action of the RF coil 005, plasma is generated, and the bias electrode 020 provides a bias voltage to accelerate the plasma, causing it to bombard the substrate 022 and perform plasma treatment on the substrate 022.
[0039] In an inductively coupled plasma etching machine (ICP) reaction chamber, due to the limitation of the chamber structure and the power distribution of the radio frequency coil, the plasma density generated in different areas of the reaction chamber is inevitably different, so that the plasma density corresponding to different areas of the wafer surface to be etched located below the radio frequency is different, which further causes the etching rate difference of different areas of the wafer when etching the wafer by using the plasma, resulting in poor etching uniformity of different areas of the wafer.
[0040] Specifically, in the above-mentioned plasma etching machine, since the shape of the radio frequency coil is fixed and the shape of the radio frequency coil is a spiral shape, it cannot be 360° symmetrical, so that when etching the wafer by using the radio frequency coil, it is easy to cause the wafer etching to appear edge or abnormal in a certain area. In addition, the end of the radio frequency coil will be connected to the conductive column or wire, so as to aggravate the uneven distribution of the electric field of the end of the radio frequency coil, increase the probability of the wafer etching to appear Map edge or abnormal in a certain area. Wherein, the etching Map edge refers to the deviation of the edge position of the pattern (Map) caused by the etching process in the semiconductor manufacturing process. As shown in Figures 2-4 , a schematic diagram of part of the etching pattern when the wafer etching appears Map edge or abnormal in a certain area is shown. Figures 2-4
[0041] Therefore, the embodiment of the present application provides a plasma etching device, as shown in Figure 5 and Figure 6 , comprising:
[0042] a plasma reaction chamber 101 for introducing process gas and placing a wafer (i.e. substrate sheet 118);
[0043] a radio frequency assembly 129, the radio frequency assembly 129 comprising a radio frequency coil 127 and a radio frequency source, the radio frequency source being used to provide a radio frequency signal to the radio frequency coil 127, so that the radio frequency coil 127 generates a radio frequency field, which acts on the process gas to generate plasma 117;
[0044] a driving source 105 for providing driving force;
[0045] a rotating connecting plate 104, the rotating connecting plate 104 comprising a first component and a second component, wherein one side of the first component away from the second component is used to fix the radio frequency coil 127, one end of the second component is fixedly connected with the first component, and the other end is fixedly connected with the driving source 105 through a shaft coupling, under the driving of the driving source 105, the radio frequency coil 127 is driven to rotate around the center of the radio frequency coil 127.
[0046] Optionally, in an embodiment of the present application, the radio frequency source comprises an excitation radio frequency power supply 111 and an excitation source matching network 110, so as to realize signal transmission between the excitation radio frequency power supply 111 and the radio frequency coil 127 through the excitation source matching network 110, and to adjust the radio frequency signal output by the excitation radio frequency power supply 111, so as to provide the radio frequency coil with a radio frequency signal of required power.
[0047] It should be noted that, in the embodiment, the excitation source matching network can not only ensure that the excitation radio frequency power supply can effectively transmit energy to the radio frequency coil, so as to provide maximum power transmission and improve system efficiency. Moreover, the excitation source matching network can also change the impedance matching between the excitation radio frequency power supply and the radio frequency coil by adjusting the electrical elements inside, such as inductance, capacitance and transformer, so as to realize optimal energy transmission and reduce reflection loss.
[0048] Continuing as shown in Figure 6 In the embodiment, the second component can be fixedly connected with the driving source 105 through the shaft coupling 115. Optionally, the shaft coupling is an insulating structure, so as to electrically insulate the driving source and the radio frequency coil, thereby avoiding that the electric signal on the radio frequency coil is conducted to the driving source, and causing a safety hazard. However, the present application is not limited thereto, and the specific condition is determined as appropriate.
[0049] Specifically, in an embodiment of the present application, the second component is perpendicular to the first component, that is, the plane where the first component is located is perpendicular to the plane where the second component is located, and the rotating connecting plate is a T-shaped structure. However, the present application is not limited thereto, and in other embodiments of the present application, the second component and the first component can also be at other angles, and the specific condition is determined as appropriate. In specific work, the driving source rotates through the shaft coupling to drive the second component to rotate, the second component drives the first component to rotate, the first component drives the rotating connecting plate to rotate, and the rotating connecting plate drives the radio frequency coil to rotate, so as to realize the rotation of the radio frequency coil around the center thereof.
[0050] The plasma etching device provided by the embodiment of the present application not only comprises a plasma reaction chamber and a radio frequency assembly, but also comprises a driving source and a rotating connecting plate, the driving source is used for providing a driving force, one end of the rotating connecting plate is fixed with the radio frequency coil, and the other end is fixed with the driving source through a shaft coupling, under the driving of the driving source, the radio frequency coil in the radio frequency assembly is driven to rotate around the center of the radio frequency coil, so that the etching non-uniformity caused by the shape and structure of the radio frequency coil can occur at each position with the same distance to the center of the radio frequency coil, and then the etching pattern formed on the etching surface of the wafer is a plurality of concentric circles, and the situation that the wafer etching appears Map edge deviation or abnormality in a certain area is improved.
[0051] It should be noted that in the semiconductor process, when the etching pattern appears edge deviation, adjusting the amount of gas in the plasma reaction chamber and the power of the radio frequency signal applied on the radio frequency coil can only adjust the etching rate of each concentric circle area, and the etching pattern is still deviated. However, when the etching pattern distribution is concentric circles, adjusting the amount of gas in the plasma reaction chamber and the power of the radio frequency signal applied on the radio frequency coil can adjust the etching rate of the concentric circle distribution. Therefore, when the etching pattern formed on the etching surface of the wafer is a plurality of concentric circles, the situation that the wafer etching appears Map edge deviation or abnormality in a certain area is improved, and the etching uniformity is adjusted to improve the uniformity of the wafer etching.
[0052] Optionally, in an embodiment of the present application, under the driving of the driving source, the rotating connecting plate drives the radio frequency coil to rotate uniformly around the center of the radio frequency coil, so that the etching non-uniformity caused by the shape and structure of the radio frequency coil occurs at each position with the same distance to the center of the radio frequency coil with equal probability, and then the etching pattern formed on the etching surface of the wafer is a plurality of concentric circles, and the probability that the wafer etching appears Map edge deviation or abnormality in a certain area is reduced, so as to improve the uniformity of the wafer etching.
[0053] Optionally, in an embodiment of the present application, the rotating connecting plate is an insulating connecting plate, so as to electrically insulate between the driving source and the radio frequency coil, thereby avoiding that the electric signal on the radio frequency coil is conducted to the driving source, and a safety hazard is generated.
[0054] On the basis of any of the above embodiments, in an embodiment of the present application, the radio frequency assembly further comprises a connecting assembly connecting the radio frequency source and the radio frequency coil; optionally, the connecting assembly comprises a first connecting part and a second connecting part, the first connecting part is electrically connected with the radio frequency source and remains stationary during rotation of the radio frequency coil, the second connecting part is electrically connected with the radio frequency coil and rotates with rotation of the radio frequency coil; the first connecting part and the second connecting part are rotationally connected and electrically connected, so that the radio frequency signal output on the radio frequency source can be transmitted to the radio frequency coil through the first connecting part and the second connecting part in sequence, and the second component and the first component can be relatively rotated, so that the radio frequency coil can rotate around the center of the radio frequency coil on the basis of generating a radio frequency field.
[0055] It should be noted that in the plasma etching equipment provided by the embodiments of the present application, the driving source, the rotating connecting plate and the connecting assembly are arranged outside the plasma reaction chamber to drive the radio frequency coil to rotate, thereby improving the etching edge condition, instead of directly arranging a rotating electrode in the plasma reaction chamber to make the plasma rotate, which can avoid the particle problem caused by friction of the rotating electrode in the vacuum environment of the plasma reaction chamber, and will not increase the difficulty of sealing of the plasma reaction chamber due to the arrangement of the rotating electrode, thereby not increasing the probability of air leakage of the vacuum environment of the plasma reaction chamber and the cost. In addition, the lower end of the electrode part is generally connected with multiple materials such as waterway, high pressure, wafer lifting system, etc., which makes it more difficult and more costly to arrange a rotatable electrode in the plasma reaction chamber.
[0056] Specifically, in an embodiment of the present application, the connecting assembly comprises a conductive slip ring, so that the radio frequency coil can rotate around the center of the radio frequency coil on the basis of realizing the electrical connection between the radio frequency coil and the radio frequency source and generating a radio frequency field through the conductive slip ring. It should be noted that the conductive slip ring, also known as a current collecting ring, a slip ring, a current collecting ring, a bus ring, a rotating electrical joint, etc., is an electrical component for transmitting power supply and signal power in unlimited continuous rotation. Specifically, the main function of the conductive slip ring is to transmit power and signals between the rotating body and the fixed body, and it is usually installed at the center of rotation of the device and consists of rotating and stationary parts. Among them, the rotating part is connected with the rotating structure of the device and rotates with it, called "rotor"; the stationary part is connected with the fixed structure of the power source of the device, called "stator".
[0057] In another embodiment of this application, the connection assembly includes a bearing assembly to enable the RF coil to rotate around its center while maintaining an electrical connection between the RF coil and the RF source to generate a RF field. It should be noted that the bearing assembly includes a bearing, which comprises a rotating shaft and a bearing housing, allowing for low-friction relative rotation between the rotating shaft and the bearing housing.
[0058] In other embodiments of this application, the connection component may also be other structures that enable the RF coil to rotate around the center of the RF coil while maintaining an electrical connection between the RF coil and the RF source to generate a RF field, depending on the specific circumstances.
[0059] The plasma etching apparatus provided in this application embodiment is described below, taking the connection component including a conductive slip ring as an example.
[0060] Specifically, in one embodiment of this application, the first connection portion includes a conductive slip ring fixed ring, and the second connection portion includes a conductive slip ring moving ring, so as to realize the electrical connection between the radio frequency source and the radio frequency coil through the electrical connection between the conductive slip ring fixed ring and the conductive slip ring moving ring. At the same time, through the relative rotation between the conductive slip ring fixed ring and the conductive slip ring moving ring, the arrangement of the connection component does not affect the rotation of the radio frequency coil, so that the radio frequency coil can rotate smoothly.
[0061] Optionally, in one embodiment of this application, the shape of the radio frequency coil can be a planar spiral shape or a three-dimensional spiral shape. This application does not limit this; it depends on the specific circumstances. Figure 7 As shown, in one embodiment of this application, the radio frequency coil includes a first terminal A and a second terminal B.
[0062] Optionally, based on the above embodiments, in one embodiment of this application, the following continues... Figure 6 As shown, the first connection portion includes: a first conductive slip ring fixed ring 107 electrically connected to the output terminal of the radio frequency source, and a second conductive slip ring fixed ring 113 electrically connected to the input terminal of the radio frequency source; the second connection portion includes: a first conductive slip ring moving ring 109 electrically connected to the first terminal of the radio frequency coil 127, and a second conductive slip ring moving ring 114 electrically connected to the second terminal of the radio frequency coil 127.
[0063] Specifically, in one embodiment of the present application, the first end of the radio frequency coil is the input end of the radio frequency coil, and the second end of the radio frequency coil is the output end of the radio frequency coil; in another embodiment of the present application, the first end of the radio frequency coil is the output end of the radio frequency coil, and the second end of the radio frequency coil is the input end of the radio frequency coil.
[0064] Hereinafter, the first end of the radio frequency coil is taken as the input end of the radio frequency coil, and the second end of the radio frequency coil is taken as the output end of the radio frequency coil as an example to describe the plasma etching device provided by the embodiments of the present application.
[0065] Optionally, in one embodiment of the present application, as shown in Figure 6 The first conductive slip ring movable ring 109 is electrically connected to the first end of the radio frequency coil 127 through the first coil loop connecting line 116, and the second conductive slip ring movable ring 114 is electrically connected to the second end of the radio frequency coil 127 through the second coil loop connecting line 119.
[0066] In specific work, the radio frequency signal output by the excitation radio frequency power supply 111 is adjusted by the excitation source matching network 110 and then output to the first matching loop connecting line 126, transmitted to the first conductive slip ring fixed ring 107 through the first matching loop connecting line 126, and then transmitted to the first conductive slip ring movable ring 109 through the electrical connection between the first conductive slip ring fixed ring 107 and the first conductive slip ring movable ring 109. The radio frequency signal is then transmitted to the input end of the radio frequency coil 127 by the first conductive slip ring movable ring 109 through the first coil loop connecting line 116. After being output from the output end of the radio frequency coil 127, the radio frequency signal is transmitted to the second conductive slip ring movable ring 114 through the second coil loop connecting line 119, and then transmitted to the second conductive slip ring fixed ring 113 through the electrical connection between the second conductive slip ring movable ring 114 and the second conductive slip ring fixed ring 113. The radio frequency signal is then transmitted to the excitation source matching network 110 by the second conductive slip ring fixed ring 113 through the second matching loop connecting line 122, and finally returned to the excitation radio frequency power supply 111, thereby completing the transmission of the radio frequency signal.
[0067] It should be noted that, in the process of driving the radio frequency coil to rotate by the driving source, the radio frequency coil drives the first conductive slip ring movable ring and the second conductive slip ring movable ring to rotate together through the first coil loop connecting line and the second coil loop connecting line.
[0068] Therefore, in the plasma device provided by the embodiment of the present application, a connecting assembly, such as a conductive slip ring, is added on the connecting line between the radio frequency coil and the radio frequency source, the conductive slip ring is an inner and outer ring that can slide relative to each other, so that the radio frequency coil can rotate relative to the radio frequency source and maintain good conductivity; and a driving source and a rotating connecting plate are arranged above the radio frequency coil, so that in the case of a different concentric edge map or other types of abnormal non-concentric circular map, the radio frequency coil can be rotated during the process, so that the abnormal area caused by the radio frequency coil is rotated multiple times, so that the abnormal point is no longer reflected on a certain point of the wafer, and the map is displayed in the form of a concentric circle, thereby more favorably improving the uniformity of the wafer surface.
[0069] On the basis of any of the above embodiments, in an embodiment of the present application, the plasma etching device further comprises:
[0070] A shielding cover 108 is provided with a dielectric window 102 between the shielding cover 108 and the plasma reaction chamber 101, the dielectric window 102 is used to separate the containing space of the shielding cover 108 and the containing space of the plasma reaction chamber 101, it should be noted that in the embodiment, at least the radio frequency coil 127 and the connecting assembly are located in the shielding cover 108.
[0071] An insulating substrate 106 is fixedly connected with the shielding cover 108, and the first connecting part of the rotating connecting plate 104 is fixed on the insulating substrate 106.
[0072] Optionally, in an embodiment of the present application, the dielectric window is a ceramic dielectric window, but the present application does not limit this, and the specific selection is determined according to the situation.
[0073] Specifically, in an embodiment of the present application, as shown in Figure 6 The plasma etching device further comprises a fixed support 128 fixedly connected with the insulating substrate 106, and the fixed support 128 is used to fix the driving source 105, so as to fix the driving source 105 on the shielding cover.
[0074] On the basis of any of the above embodiments, in an embodiment of the present application, the dielectric window is not provided with an air inlet, and the plasma reaction chamber 101 is provided with an air inlet 103, which can be connected with the gas source 112, so that the process gas output by the gas source 112 is transmitted into the containing space of the plasma reaction chamber 101, and under the action of the radio frequency field generated by the radio frequency coil 127, the plasma 117 is generated.
[0075] Optionally, in an embodiment of the present application, as shown in Figure 6As shown, the plasma reaction chamber 101 is further provided with a bias electrode 120, and a substrate sheet (wafer) 118 is placed on the bias electrode 120, which is used to accelerate the plasma 117 in the plasma reaction chamber 101 to reach the surface of the substrate sheet 118, bombard the substrate sheet 118, and form an etching pattern on the surface of the substrate sheet 118.
[0076] On the basis of the above-mentioned embodiments, in an embodiment of the present application, the plasma etching device further comprises a bias RF power supply 121 electrically connected to the bias electrode 120, and a bias matching network 125 connected to the bias RF power supply 121 and the bias electrode 120, wherein the bias RF power supply 121 is used to output a bias signal, and the bias matching network 125 is used to provide the bias electrode 120 with a bias signal of a required size and stability based on the bias signal output by the bias RF power supply 121.
[0077] On the basis of any of the above-mentioned embodiments, in an embodiment of the present application, the plasma etching device further comprises a vacuum pump 124 and a pressure control valve 123 connected to the vacuum pump 124 and the plasma reaction chamber 101, wherein the vacuum pump 124 is used to vacuumize the plasma reaction chamber 101 to form a vacuum environment in the plasma reaction chamber 101, and the pressure control valve 123 is used to control the conduction and shutdown of the passage between the vacuum pump 124 and the plasma reaction chamber 101, that is, when the plasma reaction chamber 101 needs to be vacuumized, the passage between the vacuum pump 124 and the plasma reaction chamber 101 is turned on, and when the plasma reaction chamber 101 does not need to be vacuumized, the passage between the vacuum pump 124 and the plasma reaction chamber 101 is turned off.
[0078] In summary, the plasma etching device provided by the embodiments of the present application not only comprises a plasma reaction chamber and a RF assembly, but also comprises a driving source and a rotary connecting plate, the driving source is used to provide a driving force, one end of the rotary connecting plate is fixed to the RF coil, and the other end is fixed to the driving source through a shaft coupling, under the driving of the driving source, the RF coil in the RF assembly is driven to rotate around the center of the RF coil, so that in the scenario where a eccentric side map or other kinds of abnormal non-concentric circle map is easily generated, the abnormal area caused by the RF coil can be rotated multiple times during the process by rotating the RF coil, so that the abnormal point is no longer reflected on a certain point of the wafer, and the map is shown as a concentric circle, thereby more favorably improving the uniformity of the wafer surface.
[0079] The various embodiments in this specification are described in a progressive, parallel, or combined manner. Each embodiment focuses on its differences from other embodiments, and similar or identical parts between embodiments can be referred to interchangeably. It should be noted that the descriptions of the drawings and embodiments in this application are illustrative rather than restrictive. The same reference numerals identify the same structures throughout the embodiments of this specification. It should also be noted that in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations.
[0080] The above description of the disclosed embodiments enables those skilled in the art to make or use this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims
1. A plasma etching apparatus, characterized by, include: A plasma reaction chamber, used for introducing process gases and placing wafers; The radio frequency (RF) component includes an RF coil and an RF source, wherein the RF source provides an RF signal to the RF coil, causing the RF coil to generate an RF field that acts on the process gas to generate plasma. A driving source, wherein the driving source is used to provide driving force; A rotating connecting plate includes a first component and a second component. The side of the first component away from the second component is used to fix the radio frequency coil. One end of the second component is fixedly connected to the first component, and the other end is fixedly connected to the drive source through a coupling. Under the drive of the drive source, the radio frequency coil is driven to rotate around the center of the radio frequency coil.
2. The plasma etching apparatus of claim 1, wherein, The rotating connecting plate is an insulating connecting plate.
3. The plasma etching apparatus of claim 1, wherein, The plane containing the first component is perpendicular to the plane containing the second component.
4. The plasma etching apparatus of claim 1, wherein, The radio frequency component further includes: a connection component connecting the radio frequency source and the radio frequency coil; The connection component includes a first connection part and a second connection part. The first connection part is electrically connected to the radio frequency source and remains stationary during the rotation of the radio frequency coil. The second connection part is electrically connected to the radio frequency coil and rotates with the rotation of the radio frequency coil. The first connecting portion and the second connecting portion are rotatably connected, and the first connecting portion and the second connecting portion are electrically connected.
5. The plasma etching apparatus of claim 4, wherein, The connecting assembly includes a conductive slip ring, the first connecting portion includes a fixed conductive slip ring, and the second connecting portion includes a moving conductive slip ring.
6. The plasma etching apparatus of claim 5, wherein, The first connection portion includes: a first conductive slip ring fixed ring electrically connected to the output terminal of the radio frequency source, and a second conductive slip ring fixed ring electrically connected to the input terminal of the radio frequency source; The second connection portion includes: a first conductive slip ring moving ring electrically connected to the first end of the radio frequency coil, and a second conductive slip ring moving ring electrically connected to the second end of the radio frequency coil.
7. The plasma etching apparatus of claim 6, wherein, The first conductive slip ring moving ring is electrically connected to the first end of the radio frequency coil through the first coil circuit connection line, and the second conductive slip ring moving ring is electrically connected to the second end of the radio frequency coil through the second coil circuit connection line.
8. The plasma etching apparatus of claim 4, wherein, The connecting assembly includes a bearing assembly.
9. The plasma etching apparatus of claim 4, wherein, Also includes: A shielding cover is provided with a dielectric window between the shielding cover and the plasma reaction chamber to separate the receiving space of the shielding cover and the receiving space of the plasma reaction chamber, wherein at least the radio frequency coil and the connecting assembly are located inside the shielding cover; An insulating substrate is fixedly connected to the shielding cover, and the first connecting portion is fixed on the insulating substrate.
10. The plasma etching apparatus of claim 1, wherein, The radio frequency coil has a planar spiral shape or a three-dimensional spiral shape.