Semiconductor light emitting device

Abstract

The embodiment of the utility model provides a semiconductor light-emitting device. The semiconductor light-emitting device comprises a substrate; the LED epitaxial structure comprises an N-type semiconductor layer, a quantum well layer and a P-type semiconductor layer which are sequentially arranged on a substrate, the CRD epitaxial structure is arranged on the side, facing the LED epitaxial structure, of the substrate, the CRD epitaxial structure and the LED epitaxial structure are arranged in a spaced mode, and the CRD epitaxial structure comprises a channel layer and a barrier layer which are sequentially arranged on the substrate. The semiconductor light-emitting device disclosed by the embodiment of the utility model integrates the characteristics of an LED and a CRD chip, can solve the problem that the head and the tail of an LED lamp head are uneven in light-emitting brightness, and has a smaller volume.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor light emitting, especially relates to a semiconductor light emitting device. BACKGROUND

[0002] LED (light-emitting diode) has energy saving, small volume, good shock resistance, environmental protection, long life, light color, fast response and other advantages, is widely used in lighting, car, traffic, billboards, instrument indicating lamp and other fields. LED lamp strip is born with the development of LED technology, can be cut according to actual length, it is very convenient, and there are red, green, blue, yellow white, warm white and other multiple light colors can be selected, now basically replace LED lamp tube. However, LED lamp strip may have the problem of uneven luminous intensity at the head and tail, therefore it is necessary to improve the LED chip to improve the problem of uneven luminous intensity at the head and tail of LED lamp strip. SUMMARY

[0003] Therefore, to overcome at least part of defects in the prior art, the utility model embodiment provides a semiconductor light emitting device, the characteristics of LED and CRD chip are collected, the problem of uneven luminous intensity at the head and tail of LED lamp strip can be improved, and the volume is relatively small.

[0004] Specifically, in one aspect, the utility model provides a semiconductor light emitting device, which comprises: a substrate; an LED epitaxial structure comprising an N-type semiconductor layer, a quantum well layer and a P-type semiconductor layer arranged on the substrate in sequence; and a CRD epitaxial structure arranged on the side of the substrate facing the LED epitaxial structure and spaced apart from the LED epitaxial structure, the CRD epitaxial structure comprising a channel layer and a barrier layer arranged on the substrate in sequence.

[0005] As can be seen from the above, the semiconductor light emitting device of the above embodiment of the utility model can achieve one or more of the following beneficial effects: the LED epitaxial structure and the CRD epitaxial structure in the semiconductor light emitting device are arranged on the same substrate, the LED epitaxial structure has the characteristics of LED light emission when powered on, the CRD epitaxial structure has the characteristics of constant current of constant current diode and high voltage resistance when powered on, so that the semiconductor light emitting device is equivalent to integrating the functions of LED chip and CRD chip, the LED epitaxial structure and the CRD epitaxial structure can be connected in series through the internal circuit of the semiconductor light emitting device, the problem of uneven luminous intensity at the head and tail of LED lamp strip can be improved when applied to LED lamp strip, and compared with directly connecting a single LED chip and a CRD chip in series, the semiconductor light emitting device of the embodiment can greatly reduce the volume of the whole device.

[0006] Other aspects and features of the present invention will become apparent from the following detailed description with reference to the accompanying drawings. However, it should be understood that the drawings are for illustrative purposes only and are not intended to limit the scope of the invention. It should also be understood that, unless otherwise indicated, the drawings are not necessarily drawn to scale; they are merely intended to conceptually illustrate the structures and processes described herein. Attached Figure Description

[0007] The specific embodiments of this utility model will now be described in detail with reference to the accompanying drawings.

[0008] Figure 1 This is a side view of a semiconductor light-emitting device provided in an embodiment of the present invention.

[0009] Figure 2 This is a side view of a semiconductor light-emitting device according to another embodiment of the present invention.

[0010] Figure 3 This is a schematic diagram showing the arrangement of the CRD epitaxial structure and the LED epitaxial structure in a semiconductor light-emitting device according to an embodiment of the present invention.

[0011] Figure 4 This is a schematic diagram showing the arrangement of the CRD epitaxial structure and the LED epitaxial structure in a semiconductor light-emitting device according to another embodiment of the present invention.

[0012] Figure 5 This is a schematic diagram showing the arrangement of the CRD epitaxial structure and the LED epitaxial structure in a semiconductor light-emitting device according to another embodiment of the present invention.

[0013] Figure 6 for Figure 1 This is a schematic diagram of the structure obtained in one step of a fabrication process for a semiconductor light-emitting device.

[0014] Figure 7 for Figure 6 A schematic diagram of the structure obtained in the next step.

[0015] Figure 8 for Figure 7 The structural diagram obtained in the next step.

[0016] Figure 9 for Figure 8 The structural diagram obtained in the next step.

[0017] Figure 10 for Figure 9 The structural diagram obtained in the next step.

[0018] [Explanation of Labels in the Attached Image]

[0019] 10, CRD epitaxial structure; 10a, CRD epitaxial structure material layer; 11, CRD epitaxial layer; 111, channel layer, 112, isolation layer; 113, barrier layer; 12, first high-resistance buffer layer; 13, first buffer layer; 131, first AlN layer; 132, second AlN layer; 133, first low-temperature growth GaN layer. 20, LED epitaxial structure; 20a, LED epitaxial structure material layer; 21, LED epitaxial layer; 211, N-type semiconductor layer; 212, N-type isolation layer; 213, stress adjustment layer; 214, quantum well layer; 215, electron blocking layer; 216, P-type semiconductor layer; 22, second high-resistance buffer layer; 23, second buffer layer; 231, third AlN layer; 232, fourth AlN layer; 233, second low-temperature growth GaN layer; 30, substrate; 40, growth inhibition layer. DETAILED DESCRIPTION

[0020] In order to make the above-mentioned purposes, features and advantages of the present application more apparent and easy to understand, the specific embodiments of the present application will be described in detail below with reference to the drawings.

[0021] In order to make the above-mentioned purposes, features and advantages of the present application more apparent and easy to understand, the specific embodiments of the present application will be described in detail below with reference to the drawings.

[0022] It should be noted that the terms "first", "second" and the like in the description and claims of the present application and the above drawings are used to distinguish similar objects, and do not necessarily indicate a specific order or sequence. It should be understood that the terms thus used can be interchanged under appropriate circumstances, so that the embodiments of the present application described herein can be implemented in an order other than that illustrated or described herein. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion, for example, a process, method, system, product or device that includes a series of steps or units does not necessarily limit to those steps or units clearly listed, but can include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0023] It should also be noted that the division of the plurality of embodiments in the present application is only for the convenience of description, and should not constitute a special limitation. The features in various embodiments can be combined and mutually referenced without contradiction.

[0024] AsFigure 10 As shown in the drawings, the semiconductor light emitting device provided by the embodiment of the present application comprises a substrate 30, an LED epitaxial structure 20 and a CRD (Current Regulative Diode) epitaxial structure 10. The LED epitaxial structure 20 comprises an LED epitaxial layer 21, which specifically comprises an N-type semiconductor layer 211, a quantum well layer 214 and a P-type semiconductor layer 216 arranged on the substrate in sequence. The CRD epitaxial structure 10 is arranged on the side of the substrate 30 facing the LED epitaxial structure 20 and is arranged in a spaced manner with the LED epitaxial structure 20. The CRD epitaxial structure 10 comprises a CRD epitaxial layer 11, which comprises a channel layer 111 and a barrier layer 113 arranged on the substrate 30 in sequence.

[0025] The substrate 30 is, for example, an Al2O3 (sapphire) substrate.

[0026] The N-type semiconductor layer 211 in the LED epitaxial structure 20 is an N-type silicon-doped GaN (gallium nitride) layer, and the thickness of the N-type semiconductor layer 211 is, for example, 1-4 μm. The silicon concentration in the N-type semiconductor layer 211 ranges from 1*10 19 cm -3 to 3*10 19 cm -3 . The quantum well layer 214 is, for example, a superlattice multiple quantum well light emitting layer. The P-type semiconductor layer 216 is a P-type magnesium-doped GaN layer. In some embodiments, the LED epitaxial layer 21 can further comprise an N-type isolation layer 212 located on the side of the N-type semiconductor layer 211 away from the substrate 30. The N-type isolation layer 212 can be a silicon-doped GaN layer, and the silicon concentration in the N-type isolation layer 212 ranges from 1*10 17 cm -3 to 8*10 18 cm -3 . In some embodiments, a stress adjustment layer 213 is further arranged between the N-type isolation layer 212 (or the N-type semiconductor layer 211) and the quantum well layer 214. The stress adjustment layer 213 is, for example, a superlattice layer of InGaN / GaN, and the concentration of In in the stress adjustment layer 213 is lower than the In concentration in the quantum well layer 214. In some embodiments, an electron blocking layer 215 is further arranged between the quantum well layer 214 and the P-type semiconductor layer 216. The electron blocking layer 215 is, for example, an AlGaN (aluminum gallium nitride) layer, and the thickness is, for example, 10-30 nm (nanometers).

[0027] In the CRD epitaxial structure 10, the channel layer 111 is specifically a GaN layer, and has a thickness of, for example, 100-300 nm. The barrier layer 113 is specifically an AlGaN layer, and has a thickness of, for example, 10-30 nm, and an Al component content of 20%-30%. In some embodiments, there is also an isolation layer 112 between the channel layer 111 and the barrier layer 113, and the isolation layer 112 is specifically an AlN (aluminum nitride) layer, and has a thickness of, for example, 1-2 nm.

[0028] In some embodiments, the CRD epitaxial structure 10 also includes a buffer layer between the CRD epitaxial layer 11 and the substrate 30, and specifically includes a first buffer layer 13 and a first high-resistance buffer layer 12 arranged in sequence on the substrate, wherein the first buffer layer 13 contains AlN, and the first high-resistance buffer layer 12 contains GaN.

[0029] For example, the first buffer layer 13 includes one or more AlN layers, and the first buffer layer 13 can also be referred to as an AlN layer. In some embodiments, the first buffer layer 13 includes a first AlN layer 131 and a second AlN layer 132, the first AlN layer 131 has a thickness of 10-100 nm, and the second AlN layer 132 has a thickness of 1-100 nm. In some embodiments, the first buffer layer 13 also includes a first low-temperature growth GaN layer 133 on the second AlN layer 132, and the first low-temperature growth GaN layer 133 is an undoped GaN layer.

[0030] The first high-resistance buffer layer 12 can achieve a higher resistance value by, for example, doping Fe or a C source, and in some embodiments, the first high-resistance buffer layer 12 can also be an undoped GaN layer, and the first high-resistance buffer layer 12 has a thickness in the range of 1-3 microns. Since the first low-temperature growth GaN layer 133 and the first high-resistance buffer layer 12 are both GaN materials, the combination of the first low-temperature growth GaN layer 133 and the first high-resistance buffer layer 12 can also be referred to as a first GaN buffer layer between the channel layer 111 and the substrate 30. The stacked structure of the first buffer layer 13 and the first high-resistance buffer layer 12 can also be regarded as a stacked structure of an AlN layer and a first GaN buffer layer. The first AlN layer 131 and the second AlN layer 132 in the first buffer layer 13 can improve the crystal quality of the subsequently grown GaN material, and the provision of the first low-temperature growth GaN layer 133 is beneficial for stress release, and can effectively avoid cracks in the appearance of the CRD epitaxial structure 10.

[0031] The semiconductor light-emitting device provided in the embodiment of the utility model, LED epitaxial structure 20 can form LED chip in subsequent preparation process, so that it has the characteristics of LED light-emitting when electrified, CRD epitaxial structure 10 can form CRD chip in subsequent preparation process, so that it has the characteristics of constant current of constant current diode and high voltage resistance when electrified, so that the semiconductor light-emitting device is equivalent to integrate LED chip and CRD chip functions in one, LED epitaxial structure 20 and CRD epitaxial structure 10 can be connected in series by the internal circuit of the semiconductor light-emitting device, the semiconductor light-emitting device provided in the embodiment of the utility model is applied to LED lamp strip, which can improve the problem of uneven luminous brightness of LED lamp strip head and tail, and compared with directly connecting single LED chip and CRD chip in series, the semiconductor light-emitting device of the embodiment can greatly reduce the volume of the whole device.

[0032] When the number of LED epitaxial structures 20 is multiple, the number of LED epitaxial structures 20 is greater than the number of CRD epitaxial structures, that is, the ratio of the number of LED epitaxial structures 20 to the number of CRD epitaxial structures 10 on the same substrate 30 is N:1, wherein N>1, the multiple LED epitaxial structures 20 are arranged at intervals with the CRD epitaxial structure 10, and the multiple LED epitaxial structures 20 are arranged at intervals respectively.

[0033] In the embodiment, the LED epitaxial structure 20 and the CRD epitaxial structure 10 are arranged in the mode of N:1 on the same substrate 30, so that one CRD chip can be used for constant current of multiple LED chips on the same chip product, the current of the LED is uniform, the luminous brightness is more uniform, the corresponding size of CRD is fully utilized, the production difficulty of the product can be reduced, and the conventional CRD design specification can be applied. In the subsequent preparation process, electrodes can be prepared on the multiple LED epitaxial structures 20 and the CRD epitaxial structure 10 by a metal layer, and the series connection of multiple epitaxial structures can be realized, which is less difficult to connect than multiple independent chips, and the connection is more stable. In addition, due to the integration of the constant current function of the CRD chip, the multiple LED chips made of multiple LED epitaxial structures 20 can emit light more uniformly, so that the originally large-size LED chip can be converted into multiple small-size LED chips, compared with the same brightness requirement, the production difficulty is reduced, and the integrated chip is more suitable for outdoor and other scenes with higher brightness requirements.

[0034] Referring to Figure 1 which shows that the multiple LED epitaxial structures 20 are arranged at intervals on one side of the CRD epitaxial structure 10.

[0035] Referring to Figure 3which shows a structure that multiple LED epitaxial structures 20 are arranged along two adjacent sides of the CRD epitaxial structure 10 respectively. Specifically, in the semiconductor light emitting device, multiple epitaxial structures (including the LED epitaxial structure 20 and the CRD epitaxial structure 10) are arranged in a rectangular array of multiple rows and multiple columns, and the CRD epitaxial structure 10 is located at a top corner of the rectangular array.

[0036] With reference to Figure 4 which shows a structure that multiple LED epitaxial structures 20 are arranged around the CRD epitaxial structure 10. Specifically, in the semiconductor light emitting device, multiple epitaxial structures (including the LED epitaxial structure 20 and the CRD epitaxial structure 10) are arranged in a rectangular array of multiple rows and multiple columns, and the CRD epitaxial structure 10 is located in the middle of the rectangular array.

[0037] It should be noted that, Figure 5 The number of LED epitaxial structures 20 is only illustrative, and the embodiments of the present application are not limited to the above examples.

[0038] In some embodiments, the size of the orthographic projection pattern of the multiple LED epitaxial structures 20 on the substrate 30 is the same, which can make the current in the semiconductor light emitting device more uniform and the light efficiency more uniform. For example, the orthographic projection pattern of the multiple LED epitaxial structures 20 on the substrate 30 is a plurality of rectangles, and the length and width of each rectangle are equal, for example, the orthographic projection pattern of each LED epitaxial structure 20 on the substrate is a rectangle of 7mil*15mil (1mil=0.001 inch).

[0039] In some embodiments, the gap between the two adjacent LED epitaxial structures 20 is less than or equal to the gap between the LED epitaxial structure 20 and the CRD epitaxial structure 10. For example, with reference to Figures 4 to 5 The gap width between the two adjacent LED epitaxial structures 20 is W2, and the gap between the CRD epitaxial structure 10 and the LED epitaxial structure adjacent to the left is W1, that is, W2 is less than or equal to W1. Wherein, the gap width W1 between the CRD epitaxial structure 10 and the LED epitaxial structure 20 is greater than or equal to 60 microns, which can ensure the relative independence between the CRD epitaxial structure 10 and the LED epitaxial structure 20.

[0040] In some embodiments, with reference to Figure 5The area of ​​the orthographic projection of the CRD epitaxial structure 10 onto the substrate 30 is smaller than the area of ​​the orthographic projection of a single LED epitaxial structure 20 onto the substrate 30. For example, the orthographic projection of the CRD epitaxial structure 10 onto the substrate 30 is a rectangle of 8 mil * 10 mil. The CRD chip containing the CRD epitaxial structure 10 has a constant current function. Making the CRD epitaxial structure 10 smaller can reduce product costs, while making the size of the LED epitaxial structure 20 larger can ensure the luminous brightness of the LED chip.

[0041] In some embodiments, such as Figures 3 to 6 The illustrated LED epitaxial structure 20 includes a second high-resistivity buffer layer 22 located between the N-type semiconductor layer 211 and the substrate 30. The second high-resistivity buffer layer 22 is, for example, an undoped GaN layer, and its material may be the same as or different from that of the first high-resistivity buffer layer 12. For example, in some embodiments, the first high-resistivity buffer layer 12 is a Fe- or C-doped GaN layer, and the second high-resistivity buffer layer 22 is an undoped GaN layer. Alternatively, in some embodiments, neither the first high-resistivity buffer layer 12 nor the second high-resistivity buffer layer 22 is an undoped GaN layer. The thickness of the second high-resistivity buffer layer 22 is, for example, 2–4 micrometers.

[0042] The LED epitaxial structure 20 also includes a second buffer layer 23 located between the second high-resistivity buffer layer 22 and the substrate 30. In some embodiments, the second buffer layer 23 includes a second low-temperature grown GaN layer 233. The second low-temperature grown GaN layer 233 facilitates stress release and can prevent cracks from appearing on the surface of the LED epitaxial structure 20. The second low-temperature grown GaN layer 233 is an undoped GaN layer. The combination of the second low-temperature grown GaN layer 233 and the second high-resistivity buffer layer 22 can be referred to as the second GaN buffer layer. That is, the LED epitaxial structure 20 includes a second GaN buffer layer located between the N-type semiconductor layer 211 and the substrate 30. In some embodiments, the thickness of the second GaN buffer layer is greater than the thickness of the first GaN buffer layer in the CRD epitaxial structure 10. That is, the sum of the thicknesses of the second low-temperature grown GaN layer 233 and the second high-resistivity buffer layer 22 is greater than the sum of the thicknesses of the first low-temperature grown GaN layer 133 and the first high-resistivity buffer layer 12. In some specific embodiments, the ratio of the total thickness of the LED epitaxial structure 20 to the total thickness of the CRD epitaxial structure 10 ranges from 1.7 to 3.5. A thinner CRD epitaxial structure 10 reduces the chip breakage rate and improves yield to some extent. It avoids the problem of excessive warpage caused by an overly thick CRD epitaxial structure 10, which could lead to uneven Al composition distribution in the AlGaN barrier layer. A thicker LED epitaxial structure 20 ensures the quality requirements of the GaN crystal. For example, the total thickness of the CRD epitaxial structure 10 ranges from 2 to 3 micrometers, while the total thickness of the LED epitaxial structure 20 ranges from 5 to 7 micrometers.

[0043] Referring to Figure 1 In some embodiments, the second buffer layer 23 further comprises, for example, a third AlN layer 231 and a fourth AlN layer 232 which are sequentially stacked on the substrate 30 between the second low-temperature growth GaN layer 233 and the substrate 30, the thickness of the third AlN layer 231 can be the same as that of the first AlN layer 131, and the thickness of the fourth AlN layer 232 can be the same as that of the second AlN layer 231.

[0044] The preparation method of the semiconductor light emitting device provided in the above embodiments of the utility model comprises:

[0045] S1: growing a first epitaxial structure material layer on a substrate;

[0046] S2: forming a growth inhibition layer on the side of the first epitaxial structure material layer away from the substrate;

[0047] S3: etching part of the first epitaxial structure material layer to obtain a first epitaxial structure arranged on a partial area of the substrate;

[0048] S4: growing a second epitaxial structure material layer on the area of the substrate exposed outside the first epitaxial structure;

[0049] S5: etching the joint between the second epitaxial structure material layer and the first epitaxial structure layer to obtain the first epitaxial structure and the second epitaxial structure arranged at a distance from each other;

[0050] Among them, one of the first epitaxial structure and the second epitaxial structure is an LED epitaxial structure 20, and the other is a CRD epitaxial structure 10. The specific layer structure of the LED epitaxial structure 20 and the CRD epitaxial structure 10 can refer to the description of the foregoing embodiments.

[0051] For example, Figure 2A structure diagram obtained after each step of the preparation method is shown in FIG. 10. In step S1, the materials corresponding to the layers of the CRD epitaxial structure 10 are sequentially grown on the substrate 30. For example, S11: a first layer of AlN material is formed on the substrate 30 by PECVD (corresponding to the first AlN layer 131); S12: heat treatment is performed in a hydrogen environment at a high temperature (1000-1200 °C) for 8-12 minutes; S13: a second layer of AlN material is grown on the first AlN layer 131 by MOCVD (corresponding to the second AlN layer 132); S14: a layer of GaN is grown at a low temperature (corresponding to the first low-temperature growth GaN layer 133); that is, the materials required for growing the first buffer layer 13 in steps S11-S14. After step S14, step S15 is performed: a high-resistance GaN layer is grown at a high temperature of 1000-1150 °C (corresponding to the first high-resistance buffer layer 12); and step S16 is performed after step S15: the materials required for sequentially forming the layers of the CRD epitaxial layer 11 are sequentially formed, for example, a GaN layer, an AlN layer, and an AlGaN material layer, to sequentially form the channel layer 111, the isolation layer 112, and the barrier layer 113 in subsequent processes. After step S1 is completed, step S2 is performed: the materials required for sequentially forming the layers of the LED epitaxial structure 20 are sequentially formed on the CRD epitaxial structure material layer 10a, for example, a GaN layer, an InGaN layer, and an AlGaN layer, to sequentially form the buffer layer 21, the channel layer 211, and the barrier layer 212 in subsequent processes. Figures 6 to 10 A structure in which the CRD epitaxial structure material layer 10a is formed on the substrate 30 is shown in FIG. 11.

[0052] The structure obtained after step S2 is completed can be referred to FIG. 12. Figure 6 As shown in FIG. 13, the growth-inhibiting layer 40 can be selected from a native SiN (silicon nitride) material. The growth-inhibiting layer 40 formed of the native SiN material can directly protect the barrier layer 113 from leakage.

[0053] In step S3, the region of the substrate 30 on which the CRD epitaxial structure 10 is to be subsequently formed can be referred to as a preset region, and in step S3, the portion of the CRD epitaxial structure material layer 10a located outside the preset region can be completely removed or partially removed, and the portion of the CRD epitaxial structure material layer 10a located within the preset region is not etched, thereby forming the CRD epitaxial structure. The “completely removed” means that the surface of the substrate 30 located outside the preset region is exposed, and the first layer of AlN material layer and the material layer thereon formed in step S11 are etched away. That is, in some embodiments, step S3 specifically includes step S31: etching all the material layers of the first epitaxial structure material layer outside the preset region, so that the first epitaxial structure is formed within the preset region, and the surface of the substrate located outside the preset region is exposed. Figure 7 The structure obtained after step S31 is completed is shown in FIG. 14.

[0054] In some embodiments, step S3 further comprises step S32: etching the first epitaxial structure material layer outside the preset region, so that the first epitaxial structure is formed in the preset region, and the surface of the substrate outside the preset region is covered by the partial material layer of the first epitaxial structure material layer.

[0055] Compared with step S32, step S31 can avoid the problem of poor flatness of the GaN material layer caused by etching, so that the material layer grown in subsequent step S4 can be directly grown on the surface of the substrate 30, and the growth quality is better.

[0056] In step S4, if step S31 is used in the foregoing step S3, step S4 specifically comprises step S41: growing a GaN buffer layer (corresponding to a second low-temperature grown GaN layer 233) at low temperature on the structure obtained in step S3; and step S42: growing an undoped GaN layer (corresponding to a second high-resistance buffer layer 22) at a temperature of 1000-1150°C. The layers of materials required for growing the second buffer layer 23 and the second high-resistance buffer layer 22 are grown through steps S41 and S42. After step S42, the layers of materials required for growing an LED epitaxial layer are grown, for example, comprising steps S43-S47. Step S43: growing an N-type silicon-doped GaN layer (corresponding to an N-type semiconductor layer 211), with a silicon concentration ranging from 1*10 19 cm -3 ~3*10 19 cm -3 (corresponding to an N-type semiconductor layer 211); step S44: growing a silicon-doped GaN layer, with a silicon concentration ranging from 1*10 17 cm -3 ~8*10 18 cm -3 (corresponding to an N-type isolation layer 212); step S45: growing an InGaN / GaN superlattice layer (corresponding to a stress adjustment layer 213), with a barrier silicon concentration ranging from 1*17cm -3 ~8*18cm -3, temperature range 750-950℃; step S46: using high purity N2as the main carrier gas, TMGa, TEGa, TMAl, TMIn and NH3as Ga source, Al source, In source and N source. Superlattice multiple quantum well light emitting layer (corresponding to quantum well layer 214 subsequently formed) is grown. Step S47: AlGaN layer (corresponding to electron blocking layer 215 subsequently formed) is grown. Step S48: P-type GaN layer (corresponding to P-type semiconductor layer 216 subsequently formed) is grown with magnesium doping. In step S4, since the top of the CRD epitaxial structure 10 is covered with the growth inhibition layer 40, the aforementioned layers of materials are only grown in the part outside the preset area. The structure obtained after step S4 can be referred to as shown in Figure 8 , at this time, the CRD epitaxial structure 10 is adjacent to and in contact with the LED epitaxial structure material layer 20a.

[0057] If step S32 is used in step S3, step S41 can not be performed, and only step S42 and the subsequent steps can be directly performed. That is, in the finally prepared semiconductor light emitting device, the material layers of the first low-temperature grown GaN 133 layer and the second low-temperature grown GaN 233 are both formed in step S14.

[0058] When the third AlN layer 231 and the fourth AlN layer 232 are arranged in the LED epitaxial structure 20, if step S32 is used in step S3, the material layers of the third AlN layer 231 and the first AlN layer 131 are both formed in step S11. The material layers of the fourth AlN layer 232 and the second AlN layer 132 are both formed in step S13. If step S31 is used in step S3, the material layers for forming the third AlN layer 231 and the fourth AlN layer 232 can be prepared before step S41 with reference to the process conditions in steps S11 to S13.

[0059] In each sub-step of step S4, when the required reaction temperature is higher than 500℃, sufficient NH3(ammonia) needs to be introduced to provide nitrogen atoms to protect the CRD epitaxial structure 10.

[0060] In step S5, ICP etching can be used to etch the joint between the CRD epitaxial structure 10 and the LED epitaxial structure material layer 20a, to obtain the CRD epitaxial structure 10 and the LED epitaxial structure 20 arranged apart from each other, and ISO is plated on the part between them for protection. The structure diagram obtained after step S5 can be referred to as shown in Figure 9 Figure 10 Subsequently, the growth inhibition layer 40 can be selected to be retained or removed according to actual needs.

[0061] In some other embodiments, the first epitaxial structure layer is the LED epitaxial structure 20, and the second epitaxial structure layer is the CRD epitaxial structure 10. In step S1, the materials corresponding to the layers required for the LED epitaxial structure 20 are grown on the substrate 30 first, and the LED epitaxial structure material layer 20a is obtained. The specific process steps and conditions can refer to the contents of steps S41 to S47 described above, and will not be repeated here. The region of the substrate 30 corresponding to the CRD epitaxial structure 10 is the preset region. In step S3, the LED epitaxial structure material layer 20a in the preset region is removed, and the LED epitaxial structure 20 is obtained. In step S4, the layers of materials required for the CRD epitaxial structure 10 are grown in the preset region, and the CRD epitaxial structure material layer 10a is obtained. The specific process steps and conditions can refer to the contents of steps S11 to S16 described above, and will not be repeated here. Compared with the embodiments in which the first epitaxial structure layer is the LED epitaxial structure 20 and the second epitaxial structure layer is the CRD epitaxial structure 10, or the first epitaxial structure layer is the CRD epitaxial structure 10 and the second epitaxial structure layer is the LED epitaxial structure 20, the embodiments can avoid the problem that the high temperature in the process of preparing the CRD epitaxial structure material layer 10a affects the InGaN layer in the quantum well layer 214 of the LED epitaxial structure 20, thereby causing the light efficiency of the LED to deteriorate.

[0062] The above is only a preferred embodiment of the present application, and does not limit the present application in any form. Although the present application has been disclosed as above with reference to the preferred embodiments, it is not intended to limit the present application. Any person skilled in the art can make some changes or modifications to the above disclosed technical content without departing from the technical solution of the present application, and any simple modification, equivalent change and modification of the above embodiments based on the technical essence of the present application are still within the scope of the technical solution of the present application.

Claims

1. A semiconductor light-emitting device, characterized in that, The application relates to a light emitting diode (LED) structure, comprising: a substrate; a plurality of LED epitaxial structures, each of which comprises an N-type semiconductor layer, a quantum well layer and a P-type semiconductor layer arranged in sequence on the substrate; a CRD epitaxial structure arranged on one side of the substrate facing the LED epitaxial structures and spaced from the LED epitaxial structures, the CRD epitaxial structure comprising a channel layer and a barrier layer arranged in sequence on the substrate.

2. The semiconductor light emitting device of Claim 1, wherein, The number of the LED epitaxial structures is multiple, and the multiple LED epitaxial structures are arranged in sequence on one side of the CRD epitaxial structure. The multiple LED epitaxial structures are arranged in sequence on one side of the CRD epitaxial structure. Alternatively, The multiple LED epitaxial structures are arranged around the CRD epitaxial structure. Alternatively, 3. The semiconductor light emitting device of Claim 2, wherein, The multiple LED epitaxial structures are arranged in array along two adjacent sides of the CRD epitaxial structure.

4. The semiconductor light emitting device of Claim 2, wherein, The multiple LED epitaxial structures have the same size in the orthographic projection on the substrate.

5. The semiconductor light emitting device of Claim 2, wherein, The gap between two adjacent LED epitaxial structures is less than or equal to the gap between the LED epitaxial structure and the CRD epitaxial structure.

6. The semiconductor light emitting device of Claim 1, wherein, The area of the CRD epitaxial structure in the orthographic projection on the substrate is less than the area of a single LED epitaxial structure in the orthographic projection on the substrate.

7. The semiconductor light emitting device of Claim 1, wherein, The gap width between the CRD epitaxial structure and the LED epitaxial structure is greater than or equal to 60 microns.

8. The semiconductor light emitting device of Claim 7, wherein, The CRD epitaxial structure further comprises a first GaN buffer layer between the channel layer and the substrate, and the LED epitaxial structure further comprises a second GaN buffer layer between the N-type semiconductor layer and the substrate, wherein the thickness of the second GaN buffer layer is greater than the thickness of the first GaN buffer layer.

9. The semiconductor light-emitting device as described in claim 7, characterized in that, The ratio of the total thickness of the LED epitaxial structure to the total thickness of the CRD epitaxial structure ranges from 1.7 to 3.

5.

10. The semiconductor light emitting device of Claim 7, wherein, The CRD epitaxial structure further comprises an AlN layer between the first GaN buffer layer and the substrate. Both the first GaN buffer layer and the second GaN buffer layer are undoped GaN layers.

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