Microstrip patch antenna and electronic equipment
By adopting an N-order Sierpinski fractal structure for the radiating patch of the microstrip patch antenna and optimizing the parameters of the dielectric substrate and ground plane, the problems of narrow bandwidth and low efficiency of microstrip patch antennas are solved, achieving high gain and wide bandwidth, which is suitable for ultra-wideband communication systems.
Patent Information
- Application Number
- CN202520075596.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-14
- Publication Date
- 2025-12-19
- Estimated Expiration
- 2035-01-14
AI Technical Summary
Existing microstrip patch antennas suffer from narrow bandwidth, low efficiency, high return loss, and limited operating frequency bands, which restricts their application in ultra-wideband communication systems.
The structure of the radiating patch is redesigned using fractal technology, specifically an N-order Sierpinski fractal structure. By combining optimized parameters of the dielectric substrate, radiating patch, and ground plane, the spatial filling and self-similarity of the fractal structure are utilized to enhance radiation efficiency and expand the operating frequency range.
It achieves reduced antenna size, increased bandwidth, high gain, low return loss, and low voltage standing wave ratio, making it suitable for long-distance communication and high-efficiency energy conversion wireless communication systems.
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Figure CN223693364U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to antenna technical field, especially a kind of microstrip patch antenna and electronic equipment. BACKGROUND
[0002] Microstrip patch antenna is the most basic and most commonly used microstrip antenna form, which is formed by attaching a radiation patch on a dielectric substrate with a ground plate, and excites a radio frequency electromagnetic field between the radiation patch and the ground plate through a feed structure, and radiates outward through the gap between the radiation patch and the ground plate around it.
[0003] However, the current microstrip antenna still has the problems of narrow bandwidth, low efficiency, large return loss and limited operating frequency band, which limits its application in ultra-wideband communication systems. Therefore, a new type of microstrip patch antenna needs to be designed to overcome these problems. SUMMARY
[0004] Therefore, the utility model aims to provide a kind of microstrip patch antenna and electronic equipment, which is designed to overcome the limitations of traditional microstrip antenna by fractal technology.
[0005] To achieve the above-mentioned purpose, the utility model adopts the following technical solutions:
[0006] In a first aspect, the utility model provides a kind of microstrip patch antenna, including dielectric substrate, radiation patch, ground plate, the radiation patch is located on the side surface of the dielectric substrate, the radiation patch is N order Sierpinski fractal structure, the initial element of the N order Sierpinski fractal structure is regular octagon, the reduction ratio of each iteration of the N order Sierpinski fractal structure is 0.4, the ground plate is located on the side surface opposite to the dielectric substrate and the radiation patch, the feed structure is used to deliver microwave energy to the radiation patch;Wherein, the N is the integer greater than or equal to 2.
[0007] In addition, according to the microstrip patch antenna described above, the utility model can have the following additional technical features:
[0008] Further, the center size of the initial element is 13.0±0.1mm.
[0009] Further, the center size of the first-order generating element of the initial element is 5.0±0.1mm.
[0010] Further, the center size of the second-order generating element of the initial element is 1.0±0.1mm, and the center distance between the second-order generating element of the initial element and the first-order generating element of the initial element is 8.6±0.1mm.
[0011] Further, the medium substrate has a length of 36±0.1mm and a width of 28±0.1mm.
[0012] Further, the medium substrate is an FR4 substrate with a relative dielectric constant of 4.4, a loss tangent angle of 0.02 and a thickness of 1.6mm.
[0013] Further, the feeding structure comprises a microstrip line electrically connected to a top corner of the radiation patch, the microstrip line is arranged on the same side surface of the medium substrate and the radiation patch, and the center line of the microstrip line coincides with the center line of the radiation patch, wherein the length of the microstrip line is 7.4±0.1mm and the width of the microstrip line is 2.8±0.1mm.
[0014] Further, the ground plate has a rectangular shape.
[0015] Further, the ground plate corresponds to the position of the microstrip line, and the length of the ground plate is 28±0.1mm and the width of the ground plate is 5.8±0.1mm.
[0016] In a second aspect, the utility model also provides an electronic equipment which applies the microstrip patch antenna.
[0017] The utility model discloses beneficial effect at least includes: through fractal technology, the structure design of radiation patch is Sierpinski fractal structure, utilizes the space filling of fractal structure and self-similarity, not only can reduce the size of antenna, can increase resonance point and spread bandwidth, in addition, the antenna of fractal structure can also realize high gain, can be applied to the application scene that needs long-distance communication or needs to improve signal reception quality, the antenna of fractal structure can also realize high radiation efficiency, can be applied to the wireless communication system that needs high efficient energy conversion and transmission. Meanwhile, on the basis of Sierpinski fractal structure radiation patch, still through optimizing the size parameter of medium substrate, radiation patch, ground plate, further expands the working frequency range of antenna, when the working frequency, antenna can realize higher gain, and lower return loss coefficient value and voltage standing wave ratio VSWR value. BRIEF DESCRIPTION OF DRAWINGS
[0018] Figure 1 It is the structure schematic drawing of the front of the microstrip patch antenna in an embodiment of the utility model;
[0019] Figure 2 It is the structure schematic drawing of the back of the microstrip patch antenna in an embodiment of the utility model;
[0020] Figure 3 It is the relationship curve drawing between return loss coefficient S11 and frequency of the microstrip patch antenna in the utility model.
[0021] Figure 4 A relationship curve diagram between a voltage standing wave ratio VSWR and a frequency of the microstrip patch antenna in the utility model;
[0022] Figure 5 An H-plane radiation pattern of the microstrip patch antenna in the utility model embodiment two when the working frequency is at 3GHz, 4GHz, 5GHz;
[0023] Figure 6 An E-plane radiation pattern of the microstrip patch antenna in the utility model embodiment two when the working frequency is at 3GHz, 4GHz, 5GHz;
[0024] Main component symbol explanation:
[0025] Dielectric substrate 100, radiation patch 200, ground plate 300, feed structure 400;
[0026] The following detailed description will further illustrate the utility model in combination with the above-mentioned drawings. DETAILED DESCRIPTION
[0027] In order to facilitate understanding of the utility model, the utility model will be described more fully below with reference to the relevant drawings. The drawings show several embodiments of the utility model. However, the utility model can be realized in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the utility model more thorough and comprehensive.
[0028] It should be noted that when an element is referred to as "fixed to" another element, it can be directly on another element or there can be a middle element. When an element is referred to as "connected" to another element, it can be directly connected to another element or there can be a middle element. The terms "vertical", "horizontal", "left", "right" and similar expressions used herein are for illustrative purposes only.
[0029] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the utility model belongs. The terms used in the specification of the utility model herein are only for the purpose of describing specific embodiments and are not intended to limit the utility model. The term "and / or" used herein includes any and all combinations of one or more related listed items.
[0030] Embodiment one:
[0031] Please refer to Figure 1 , Figure 2The utility model provides a kind of microstrip patch antenna, including dielectric substrate 100, radiating patch 200, ground plate 300, feed structure 400.Radiating patch 200 is set on the upper surface of dielectric substrate 100 by printing technology, and radiating patch 200 is N order Sierpinski fractal structure, and the initial element of N order Sierpinski fractal structure is regular octagon, and the reduction ratio of N order Sierpinski fractal structure is 0.4 each time iteration, and ground plate is set on the lower surface of dielectric substrate 100, and feed structure 400 is used to deliver microwave energy to radiating patch 200, wherein, N is the integer greater than or equal to 2.
[0032] Preferably, N is equal to 2.
[0033] Preferably, dielectric substrate 100 adopts FR4 substrate with relative dielectric constant 4.4, loss tangent angle 0.02 and thickness 1.6mm.
[0034] Preferably, ground plate 300 is rectangular in shape, and both radiating patch 200 and ground plate 300 adopt metal material, such as copper, and through the good conductivity of metal, electromagnetic wave can be effectively reflected, so as to improve the radiation efficiency of antenna.
[0035] Preferably, feed structure 400 includes microstrip line electrically connected with one top corner of radiating patch 200, and the microstrip line is arranged on the same side surface of dielectric substrate 100 and radiating patch 200, and the center line of microstrip line coincides with the center line of radiating patch 200 (the line connecting the center point of initial regular octagon to its top corner). Wherein, the microstrip line adopts metal material, such as copper.
[0036] Taking 2 order Sierpinski fractal structure as an example, the specific generation steps are described in detail, specifically, including the following steps:
[0037] First, take regular octagonal dielectric substrate 100 with certain side length;
[0038] Then, a similar octagon is dug at the center of dielectric substrate 100, and the center size (the distance from the center point of initial regular octagon to the top corner) of the dug similar octagon is 0.4 times the center size of initial regular octagon, that is, the first order Sierpinski fractal processing is completed;
[0039] Finally, taking the midpoint of the line connecting the top corner of the first dug similar octagon and the top corner of the initial regular octagon as the center, 8 similar octagons are dug again, and the center size of the second dug similar octagon is 0.4 times the center size of the first dug similar octagon, that is, the second order Sierpinski fractal processing is completed.
[0040] Example two:
[0041] Please refer to Figure 1 、 Figure 2 The microstrip patch antenna provided by the utility model is different from the first embodiment in that the structure of the microstrip patch antenna in the first embodiment is optimized by using an SNLP algorithm. It should be noted that the SNLP algorithm is a full name of Sequential Non-Linear Programming, which is similar to the quasi-Newton method. The SNLP algorithm can moderately reduce the influence of noise on the result by introducing noise filtering and response surface modeling (RSM) technology. The convergence speed of the SNLP algorithm is faster than that of the quasi-Newton method, and the result is more accurate. The SNLP algorithm is suitable for electromagnetic design problems that need to consider multiple complex constraint conditions, such as solving technical problems that meet multiple performance indicators such as gain, efficiency, and bandwidth. The main performance of the microstrip patch antenna after the final structural optimization can be improved to a certain extent.
[0042] Specifically, the center size R1 of the initial regular octagon is 13.0±0.1mm, the center size R2 of the similar octagon removed for the first time is 5.0±0.1mm, the center size R3 of the similar octagon removed for the second time is 1.0±0.1mm, and the center distance R4 between the similar octagon removed for the second time and the similar octagon removed for the first time is 8.6±0.1mm. The length L1 of the dielectric substrate 100 is 36±0.1mm, and the width W1 of the dielectric substrate 100 is 28±0.1mm. The length L2 of the microstrip line is 7.4±0.1mm, and the width W2 of the microstrip line is 2.8±0.1mm. The ground plate 300 is located directly below the microstrip line. The length L3 of the ground plate 300 is 28±0.1mm, and the width W3 of the ground plate 300 is 5.8±0.1mm.
[0043] Example Three:
[0044] The utility model further provides an electronic equipment, applied the microstrip patch antenna in example one and example two.
[0045] The following explains the performance of the microstrip patch antenna in the first embodiment and the second embodiment of the utility model by some main performance parameters:
[0046] The return loss coefficient S11 is used to reflect the impedance matching degree between the microstrip patch antenna and the transmission line, is usually in decibels (dB) as a unit, represents the ratio of reflected signal and incident signal, and the smaller the value of the return loss coefficient S11, the better the matching between the microstrip patch antenna and the transmission line, that is, more energy is transmitted to the antenna instead of being reflected back. For example Figure 3As shown, the center frequency of the microstrip patch antenna in Example One is 4.1 GHz, and the corresponding return loss coefficient S11 value is -17 dB. Within the bandwidth range of 3.1 GHz to 5 GHz, the return loss coefficient S11 value is less than -10 dB. The center frequency of the microstrip patch antenna in Example Two is also 4.1 GHz, and the return loss coefficient S11 value is -30 dB. Within the bandwidth range of 2.8 GHz to 5.6 GHz, the return loss coefficient S11 value is less than -10 dB, and the absolute bandwidth reaches 2.8 GHz, with a relative bandwidth of 66.7%.
[0047] Voltage Standing Wave Ratio (VSWR): used to reflect the port matching condition of the microstrip patch antenna. The closer the value of VSWR is to 1, the better the matching between the microstrip patch antenna and the transmission line, and the smaller the reflected power. Ideally, the value of VSWR is equal to 1, meaning no reflected power. In practical applications, the value of VSWR is usually between 1.5 and 2. Figure 4 As shown, the VSWR value of the microstrip patch antenna in Example One is between 1 and 2 within the frequency range of 3.1 GHz to 5 GHz, and the VSWR value is between 1 and 1.5 within the frequency range of 3.6 GHz to 4.5 GHz. The VSWR value of the microstrip patch antenna in Example Two is between 1 and 2 within the frequency range of 2.8 GHz to 5.6 GHz, and the VSWR value is between 1 and 1.5 within the frequency range of 3.1 GHz to 5.3 GHz.
[0048] H-plane radiation pattern: used to reflect the radiation distribution of the microstrip patch antenna in the horizontal direction, i.e., the radiation from the top of the antenna. In the H-plane radiation pattern, the center point usually represents the position of the microstrip patch antenna, and the curves or patterns in the graph represent the radiation intensity of the microstrip patch antenna in different horizontal directions. This directional pattern is very important for understanding the radiation characteristics of the microstrip patch antenna in the horizontal plane, especially when designing and optimizing the performance of the antenna. It can help engineers determine the optimal installation position and direction of the microstrip patch antenna to achieve the desired coverage and signal strength. Figure 5 As shown, the H-plane radiation pattern of the microstrip patch antenna in Example Two at the operating frequencies of 3 GHz, 4 GHz, and 5 GHz is approximately circular, indicating that the radiation intensity of the microstrip patch antenna in the horizontal direction is almost uniform, i.e., the radiation intensity in each direction does not differ much.
[0049] E-plane radiation pattern: used to show the radiation of the microstrip patch antenna in the vertical direction, i.e., from the side of the antenna. The two semicircles in the graph represent the radiation of electromagnetic waves in the upward and downward directions, respectively, and the central orange bar represents the microstrip patch antenna itself.Figure 6 As shown, the E-plane radiation patterns of the microstrip patch antenna in Example 2 at the working frequencies of 3GHz, 4GHz and 5GHz are approximately in the shape of "8", and in combination with the H-plane radiation patterns which are approximately circular, it is illustrated that the microstrip patch antenna belongs to dual-polarized antenna, and has good radiation characteristics and excellent signal coverage capability.
[0050] In addition, according to the physical test, when the working frequencies of the microstrip patch antenna in Example 2 are respectively at 3GHz, 4GHz and 5GHz, the gains of the antenna can respectively reach 1.75dB, 3.20dB and 2.0dB.
[0051] In the description of the present specification, the description of the terms "one embodiment", "some embodiments", "example", "specific example" or "some examples" and the like means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above terms does not necessarily mean the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.
[0052] The above-described embodiments only express several implementation manners of the present application, the description is more specific and detailed, but it cannot be understood as the limitation of the protection scope of the present application. It should be noted that for ordinary skilled in the art, without departing from the concept of the present application, a number of modifications and improvements can be made, which all belong to the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the appended claims.
Claims
1. A microstrip patch antenna, characterized by The microstrip patch antenna comprises: a dielectric substrate; a radiation patch arranged on one side surface of the dielectric substrate, the radiation patch being an N-order Sierpinski-like fractal structure, an initial element of the N-order Sierpinski-like fractal structure being a regular octagon, a reduction ratio of each iteration of the N-order Sierpinski-like fractal structure being 0.4, wherein the N is an integer greater than or equal to 2; a ground plate arranged on the side surface of the dielectric substrate opposite to the radiation patch; a feed structure for transmitting microwave energy to the radiation patch.
2. The microstrip patch antenna according to claim 1, characterized in that The center size of the initial element is 13.0±0.1mm.
3. The microstrip patch antenna according to claim 2, characterized in that The center size of the first-order generated element of the initial element is 5.0±0.1mm.
4. The microstrip patch antenna according to claim 3, characterized in that The center size of the second-order generated element of the initial element is 1.0±0.1mm, and the center distance between the second-order generated element of the initial element and the first-order generated element of the initial element is 8.6±0.1mm.
5. The microstrip patch antenna according to claim 2, characterized in that The length of the dielectric substrate is 36±0.1mm, and the width is 28±0.1mm.
6. The microstrip patch antenna according to any one of claims 1 to 5, characterized in that The dielectric substrate adopts an FR4 substrate with a relative dielectric constant of 4.4, a loss tangent angle of 0.02, and a thickness of 1.6mm.
7. The microstrip patch antenna according to claim 2, characterized in that The feed structure comprises a microstrip line electrically connected with a top corner of the radiation patch, the microstrip line being arranged on the same side surface of the dielectric substrate and the radiation patch, and the center line of the microstrip line coincides with the center line of the radiation patch, wherein the length of the microstrip line is 7.4±0.1mm, and the width is 2.8±0.1mm.
8. The microstrip patch antenna according to claim 7, characterized in that The ground plate is in the shape of a rectangle.
9. The microstrip patch antenna according to claim 8, characterized in that The ground plate corresponds to the position of the microstrip line, and the length of the ground plate is 28±0.1mm, and the width is 5.8±0.1mm.
10. An electronic device, comprising: The microstrip patch antenna as claimed in any one of claims 1 to 9 is applied.