Gallium oxide epitaxy device combined with beam source furnace and compatible with multiple process routes
By designing a gallium oxide epitaxial device compatible with multiple process routes, the problem of uncontrollable doping in gallium oxide epitaxial equipment was solved, enabling the preparation of high-quality epitaxial layers and cost reduction, thus meeting the industrialization needs of gallium oxide devices.
Patent Information
- Application Number
- CN202520176364.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-26
- Publication Date
- 2025-12-23
- Estimated Expiration
- 2035-01-26
AI Technical Summary
Existing gallium oxide epitaxial equipment and processes suffer from uncontrollable elemental doping issues, leading to unstable epitaxial film quality and limiting the industrial application of gallium oxide devices.
Design a gallium oxide epitaxial device that combines a beam source furnace and is compatible with multiple process routes, including MBE, HVPE, OVPE, LPCVD and MOCVD. The device stably delivers Ga-containing gas through a gas flow shut-off valve, employs a nested epitaxial growth region and high-purity materials to avoid doping, and combines a rotating mechanism and a uniform heating system to achieve the fabrication of high-quality gallium oxide epitaxial layers.
The fabrication of high-quality gallium oxide epitaxial layers has been achieved, reducing research costs, improving device stability and reliability, and meeting the compatibility requirements of various process routes.
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Figure CN223705819U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to gallium oxide film preparation technical field, concretely relates to a gallium oxide epitaxial device of combination beam source furnace and compatible multiple process routes. BACKGROUND
[0002] Gallium oxide (Ga2O3) material has excellent performance such as large band gap, high breakdown field strength, low on-resistance and low growth cost, and can be used for manufacturing semiconductor devices such as solar blind ultraviolet photovoltaic devices and high-power power electronic devices, and has significance in new energy automobile and next-generation communication fields. Gallium oxide has five crystal structures, and all of them grown by a melt method are β-Ga2O3. β-Ga2O3 is also the fourth-generation semiconductor material that is most studied in the academic field and closest to application.
[0003] In recent years, as an advanced semiconductor material, gallium oxide material has been highly valued, and the preparation technology of gallium oxide single crystal wafer has developed rapidly. Six-inch wafers have been developed, and four-inch wafers have been commercialized in small batches. However, the epitaxial growth process of gallium oxide is still in the research stage. For gallium oxide power devices, epitaxy is an essential link, and the quality of epitaxial film plays a crucial role in device performance. The choice of epitaxial equipment and process route determines the quality of epitaxial film and the future industrialization cost, so it is necessary to conduct in-depth research on epitaxial equipment and process route.
[0004] Currently, existing technologies for preparing gallium oxide epitaxial materials include MBE, HVPE, OVPE, LPCVD, MOCVD, and Mist-CVD. Each of these methods has its own advantages and disadvantages. For example, the MBE method has an extremely low deposition rate and is expensive, making it suitable only for manufacturing lateral devices and unsuitable for future industrial applications; therefore, it is mainly used for laboratory research. The Mist-CVD method is extremely difficult to control for fogging, limiting its application and hindering large-scale deployment. Existing HVPE and OVPE methods use quartz furnace tube structures in the growth region, which easily react with H2O vapor in the source gas to generate Si during epitaxial film growth, leading to uncontrollable Si doping. The MOCVD method suffers from low raw material utilization and uncontrollable C doping; furthermore, TMGa is 5-10 times more expensive than metallic Ga, resulting in high epitaxial process costs and limiting further exploration of the MOCVD method by research institutions. The uncontrollable doping of Cl, Si, or C elements in the above-mentioned epitaxial methods leads to uncontrollable doping concentrations in the epitaxial thin film, severely impacting the stability of high-voltage (>3kV) power devices. Therefore, current gallium oxide epitaxial equipment and process routes are all in the early stages of development. A unified and superior process route has not yet been established, and a gallium oxide epitaxial device capable of integrating multiple epitaxial processes has not yet been developed. Further exploration of high-quality gallium oxide epitaxial methods is needed to meet the future industrialization needs of gallium oxide epitaxy. Utility Model Content
[0005] The technical problem to be solved by this utility model is to provide a gallium oxide epitaxial device that is compact, easy to operate, highly stable, and compatible with multiple process routes, in order to meet the current application prospects of gallium oxide devices and the research needs of various epitaxial process routes.
[0006] To solve the above-mentioned technical problems, the technical solution adopted by this utility model is as follows:
[0007] A gallium oxide epitaxial device integrating a beam source furnace and compatible with multiple process routes includes: a beam source furnace, an epitaxial growth region, a conveying system, a tail exhaust system, and a cooling system. The beam source furnace is used to heat Ga metal and provide Ga-containing gas. The epitaxial growth region is used to deposit a gallium oxide thin film on the substrate surface. The gas inlet of the epitaxial growth region is connected to the beam source furnace through a pipe with a gas flow shut-off valve, and the gas inlet of the epitaxial growth region is equipped with multiple gas delivery pipes. The exhaust end of the epitaxial growth region is connected to the conveying system and the tail exhaust system, respectively. The conveying system is used to transport the substrate into and out of the epitaxial growth region, and the tail exhaust system is used to discharge the waste gas in the epitaxial growth region. The cooling system is connected to the beam source furnace, the epitaxial growth region, and the tail exhaust system to achieve cooling of the beam source furnace, the epitaxial growth region, and the tail exhaust system.
[0008] As a further improvement of this utility model, the beam source furnace is inclined upward and arranged on the side of the epitaxial growth zone.
[0009] As a further improvement of this utility model, the epitaxial growth region includes an outer wall chamber and an inner wall chamber nested together. The inner wall chamber contains a growth chamber, and the substrate is placed in the growth chamber for epitaxial processing.
[0010] As a further improvement of this utility model, the growth chamber includes two graphite heaters that are symmetrically arranged vertically and have a gap between them; a substrate base for placing a substrate is provided on the graphite heater located on the lower side, and the substrate base is connected to a rotating mechanism, which drives the substrate base and the substrate to rotate synchronously.
[0011] As a further improvement of this utility model, a heating component is provided on the outer side of the outer wall chamber, or a heating component is provided between the outer wall chamber and the inner wall chamber, so as to achieve uniform heating of the epitaxial growth zone.
[0012] As a further improvement of this utility model, the outer wall chamber adopts a double-layer water-cooled structure, and the double-layer water-cooled structure is connected to the cooling system.
[0013] As a further improvement of this utility model, a gas equalization component is provided on one side of the inner wall chamber. The gas equalization component is connected to the beam source furnace and the gas delivery pipe to achieve uniform distribution of process gas in the inner wall chamber.
[0014] As a further improvement of this utility model, the beam source furnace includes a furnace shell, a first heater is provided on the outside of the furnace shell, a crucible is provided inside the furnace shell for holding Ga metal, and multiple gas delivery pipes are provided on the side of the furnace shell for delivering process gas into the furnace shell; when the first heater heats the furnace shell, Ga metal reacts with the process gas to form Ga-containing gas, which is then delivered to the epitaxial growth zone.
[0015] As a further improvement of this utility model, the outer side of the furnace shell is also provided with a heat insulation layer and a water cooling layer. The heat insulation layer is located between the first heater and the water cooling layer, and the water cooling layer is connected to the cooling system.
[0016] As a further improvement of this utility model, the tail exhaust system includes a dry pump and a connecting pipe with a butterfly valve. The connecting pipe is connected to a cooling system. One end of the connecting pipe is connected to the dry pump, and the other end of the connecting pipe is connected to the epitaxial growth zone to extract the exhaust gas from the epitaxial growth zone and achieve exhaust gas cooling.
[0017] Compared with the prior art, the advantages of this utility model are:
[0018] This invention relates to a gallium oxide epitaxial device that combines a beam source furnace and is compatible with multiple process routes. By connecting the beam source furnace to the epitaxial growth region through a pipeline equipped with a gas flow shut-off valve, and utilizing the beam source furnace to heat Ga metal, Ga-containing gas is stably delivered to the epitaxial growth region. This device features a compact structure, good maintainability, convenient installation, and low cost. Simultaneously, multiple gas delivery pipes are installed at the end of the epitaxial growth region, allowing for the delivery of appropriate process gases according to actual process requirements. It integrates MOCVD, HVPE, OVPE, and LPCVD process capabilities, enabling excellent compatibility with multiple process routes for gallium oxide epitaxial layer fabrication. It provides gallium oxide epitaxial layer fabrication schemes with different growth rates and epitaxial thicknesses, offering a novel solution for gallium oxide epitaxial layer fabrication, significantly reducing research costs, and meeting the scientific research needs for gallium oxide epitaxial layer fabrication. Attached Figure Description
[0019] Figure 1 This is a schematic diagram illustrating the structural principle of the gallium oxide epitaxial device in a specific embodiment of this utility model;
[0020] Legend: 1. Substrate; 100. Beam source furnace; 101. Crucible; 102. Furnace shell; 103. First heater; 104. Insulation layer; 105. Water cooling layer; 106. Gas flow shut-off valve; 200. Epitaxial growth zone; 201. Outer chamber; 202. Induction heating coil; 203. Inner chamber; 204. Graphite heater; 205. Gas equalization assembly; 300. Conveying system; 400. Tail exhaust system; 500. Tail gas processor; 600. Cooling system. Detailed Implementation
[0021] The present invention will be further described below with reference to the accompanying drawings and specific preferred embodiments, but this does not limit the scope of protection of the present invention.
[0022] In the description of this utility model, it should be understood that the terms "side", "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model.
[0023] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this utility model, "multiple" means two or more, unless otherwise explicitly specified.
[0024] Example
[0025] like Figure 1 As shown, this utility model discloses a gallium oxide epitaxial device that combines a beam source furnace and is compatible with multiple process routes, including: a beam source furnace 100, an epitaxial growth region 200, a conveying system 300, a tail gas system 400, and a cooling system 600. The beam source furnace 100 is used to heat Ga metal and provide Ga-containing gas, while the epitaxial growth region 200 is used to deposit a gallium oxide thin film on the surface of the substrate 1. The beam source furnace 100 and the epitaxial growth region 200 are arranged side-by-side. The gas inlet of the epitaxial growth region 200 is connected to the beam source furnace 100 through a pipe equipped with a gas flow shut-off valve 106. Multiple gas delivery pipes are provided on the epitaxial growth region 200 near the gas inlet of the beam source furnace 100, respectively connected to a SiCl4 doping source, an oxygen source, a Mo source, and an N2 / Ar source. In addition, one or two gas inlets are typically reserved in addition to the required process gas, carrier gas, and doping gas to facilitate process expansion. The exhaust terminals of the epitaxial growth region 200 are connected to the conveying system 300 and the tail exhaust system 400, respectively. The conveying system 300 is used to transport the substrate 1 into and out of the epitaxial growth region 200, and the tail exhaust system 400 is used to discharge the waste gas in the epitaxial growth region 200 and send it to the exhaust gas processor 500 for treatment before being discharged. The cooling system 600 is connected to the beam source furnace 100, the epitaxial growth region 200, and the tail exhaust system 400 to achieve cooling of the beam source furnace 100, the epitaxial growth region 200, and the tail exhaust system 400, so as to ensure the cooling of high-heat components and improve the safety and reliability of the equipment. The cooling system 600 is equipped with water flow and water temperature detection components to accurately control the cooling effect of each high-heat component. It can be seen that the conveying system 300 can adopt conventional technical means in the art, and its main function is to realize the automated loading and unloading of gallium oxide substrates from the loading and unloading area to the epitaxial growth region 200. In this embodiment, an electronic control system can also be set to realize the automated operation and safe start and stop of the whole machine.
[0026] In this embodiment, by connecting the beam source furnace 100 and the epitaxial growth region 200 through a pipe equipped with a gas flow shut-off valve 106, and using the beam source furnace 100 to heat Ga metal, Ga-containing gas is stably delivered to the epitaxial growth region 200. This method features a compact structure, good maintainability, convenient installation, and low cost. Simultaneously, multiple gas delivery pipes are installed at the end of the epitaxial growth region 200, allowing for the delivery of appropriate process gases according to actual process requirements. This integrates MOCVD, HVPE, OVPE, and LPCVD process capabilities, providing excellent compatibility with various process routes for preparing gallium oxide epitaxial layers. It offers gallium oxide epitaxial layer preparation schemes with different growth rates and thicknesses, providing a novel solution for gallium oxide epitaxial layer preparation, significantly reducing research costs, and meeting the scientific research needs for gallium oxide epitaxial layer preparation.
[0027] like Figure 1 As shown, the beam source furnace 100 is inclined upward on the side of the epitaxial growth zone 200 to prevent the Ga solution in the molten state from flowing out.
[0028] like Figure 1 As shown, the epitaxial growth region 200 includes a nested outer wall chamber 201 and an inner wall chamber 203. The inner wall chamber 203 houses the growth chamber, where the substrate 1 is placed for epitaxial processing. The inner wall chamber 203 is made of a material that does not react with O2, H2O, Cl2, or HCl, preferably high-purity SiC material and high-purity SiC-coated or TaC-coated graphite material. Other materials with heating and insulation functions that do not react with process gases can also be selected. This effectively avoids the unintentional doping of the epitaxial film by Si contained in the quartz inner tube of existing epitaxial devices or C, metallic, and non-metallic impurities in the graphite heating element, thereby greatly improving the film quality of the epitaxial layer, achieving precise control of doping concentration, and effectively enhancing device stability and reliability. The outer wall chamber 201 needs sufficient strength to support the weight of the materials in the inner wall chamber 203. The outer wall chamber 201 adopts a double-layer water-cooling structure, which is connected to the cooling system 600 to achieve water cooling of the outer wall chamber 201.
[0029] Furthermore, the growth chamber is centered relative to the inner wall chamber 203, and includes two symmetrical graphite heaters 204 with a gap between them. The surfaces of the graphite heaters 204 are coated with a high-purity SiC or TaC coating. Both graphite heaters 204 have a semi-circular structure, and the gap between them is 4cm to 5cm. A substrate base for placing the substrate 1 is provided on the lower graphite heater 204, and the substrate base is connected to a rotating mechanism. The rotating mechanism drives the substrate base and the substrate 1 to rotate synchronously.
[0030] In this embodiment, the rotating mechanism can adopt conventional techniques in the field, preferably an air flotation design, or a motor + magnetohydrodynamic sealing method. By driving the substrate base to rotate through the rotating mechanism, the substrate 1 can be rotated to improve the uniformity of the temperature flow field on the surface of the substrate 1, thereby improving the epitaxial thickness and concentration uniformity.
[0031] In this embodiment, the substrate base is designed with a micro-angle adjustment function. For example, an adjustment screw can be set on one side of the substrate base to tilt the substrate base towards the gas source. This helps to compensate for the concentration loss caused by epitaxial film deposition when the reactive gas moves from the inlet to the outlet, and further optimizes the process uniformity. Specifically, the substrate base is a monolithic design with an adjustable angle of 0° to 5°.
[0032] In this embodiment, a heating component is provided on the outer side of the outer wall chamber 201, or a heating component is provided between the outer wall chamber 201 and the inner wall chamber 203, to achieve uniform heating of the epitaxial growth region 200. When induction heating is used, an induction heating coil 202 is concentrically arranged on the surface of the outer wall chamber 201, and the outer wall chamber 201 is made of quartz. When resistance heating is used, multiple resistance wire heating segments are arranged between the outer wall chamber 201 and the inner wall chamber 203, and the outer wall chamber 201 is made of metal.
[0033] In this embodiment, a transparent observation window made of quartz material is provided at the exhaust end of the outer wall chamber 201. Combined with an infrared temperature probe installed in the inner wall chamber 203, the reaction temperature of the substrate can be measured in real time. The remote host computer reads the temperature value in real time and adjusts the power and frequency of the induction power supply input or the power of the thyristor input in the resistance heating according to the temperature deviation. This makes the epitaxial growth region 200 uniform and controllable in a wide temperature range of 550℃ to 1400℃, with a temperature uniformity of ≤±0.5℃. This achieves precise control of the reaction temperature in the growth chamber and improves process stability.
[0034] like Figure 1 As shown, the gas inlet of the inner wall chamber 203 is provided with a gas equalization component 205, which is connected to the beam source furnace 100 and the gas delivery pipe to achieve uniform distribution of process gas within the inner wall chamber 203. In this embodiment, the gas equalization component 205 can specifically adopt the form of a combination of a flow equalization plate and a spray plate to improve the uniformity of gas distribution.
[0035] like Figure 1As shown, the beam source furnace 100 includes a furnace shell 102, a first heater 103 on the outside of the furnace shell 102, and a crucible 101 inside the furnace shell 102 for holding Ga metal. Multiple gas delivery pipes are provided on the side of the furnace shell 102, which can be connected to Cl2, H2O vapor, or N2, etc., to deliver the corresponding process gases into the furnace shell 102. When the first heater 103 heats the furnace shell 102, the Ga metal reacts with the process gases to form Ga-containing gas, which is then delivered to the epitaxial growth region 200.
[0036] Specifically, the first heater 103 can adopt a typical resistance heating method, consisting of a thermocouple, a temperature controller, and a DC power supply to form a temperature measurement and control circuit, so that the heating temperature can be uniformly controlled within the range of 500℃ to 1400℃.
[0037] In this embodiment, the Ga source required for Ga2O3 epitaxy can be formed in the following ways: (1) Ga metal is directly evaporated by heating to form Ga vapor, which is then transported to the epitaxial growth region 200 under the transport of carrier gas N2; (2) After heating Ga metal, Cl2 and N2 are introduced, GaCl is generated through a chemical reaction, and then transported to the epitaxial growth region 200 through carrier gas N2; (3) After heating Ga metal, H2O vapor and N2 are introduced, Ga2O is generated through a chemical reaction, and then transported to the epitaxial growth region 200 through carrier gas N2.
[0038] like Figure 1 As shown, the outer side of the furnace shell 102 is also provided with a heat insulation layer 104 and a water cooling layer 105. The heat insulation layer 104 is located between the first heater 103 and the water cooling layer 105, and the water cooling layer 105 is connected to the cooling system 600 to achieve cooling of the beam source furnace 100.
[0039] In this embodiment, the exhaust system 400 includes a dry pump and a connecting pipe with a butterfly valve. The connecting pipe is connected to the cooling system 600. One end of the connecting pipe is connected to the dry pump, and the other end is connected to the epitaxial growth region 200 to extract waste gas from the epitaxial growth region 200 and achieve waste gas cooling. Specifically, by using a corrosion-resistant dry pump in conjunction with a butterfly valve, the atmosphere and pressure of the epitaxial growth region 200 are controlled to achieve pressure controllability within the range from atmospheric pressure to 5 Pa.
[0040] The gallium oxide epitaxial device in this embodiment can realize the gallium oxide epitaxial process as follows:
[0041] (1) HVPE process route
[0042] In this embodiment, the gallium oxide epitaxial apparatus maintains the temperature of the beam source furnace 100 at 850°C and the temperature of the epitaxial growth region 200 at 1050°C through heating. The pressure of the epitaxial growth region 200 is maintained at 800 mbar, and the pressure of the beam source furnace 100 is always controlled to be 10 mbar higher than that of the epitaxial growth region 200. Then, Cl2 (with N2 as the carrier gas) is introduced into the gas inlet of the beam source furnace 100 and reacts with the metallic Ga in the crucible 101 to generate GaCl gas, which then enters the epitaxial growth region 200 through the gas transport channel with the gas flow shut-off valve 106. At the same time, O2 is introduced into the epitaxial growth region 200 to react with the GaCl gas to generate Ga2O3. SiCl4 or GeCl4 gas is also introduced into the epitaxial growth region 200 for doping.
[0043] (2) OVPE process route
[0044] In this embodiment, the gallium oxide epitaxial apparatus maintains the temperature of the beam source furnace 100 at 700°C, the epitaxial growth region at 900°C, and the pressure of the epitaxial growth region 200 at 800 mbar. The pressure of the beam source furnace 100 is always controlled to be 10 mbar higher than that of the epitaxial growth region 200. Then, H2O vapor (with N2 as the carrier gas) is introduced into the gas inlet of the beam source furnace 100 and reacts with the metallic Ga in the crucible 101 to generate Ga2O gas. This gas then enters the epitaxial growth region 200 through the gas flow transport channel equipped with the gas flow shut-off valve 106. At the same time, O2 is introduced into the epitaxial growth region 200 to react with the Ga2O gas to generate Ga2O3. SiCl4 or GeCl4 gases are also introduced into the epitaxial growth region 200 for doping.
[0045] (3) LPCVD process route
[0046] In this embodiment, before the reaction begins, N2 is introduced to purge the beam source furnace 100 and the epitaxial growth region 200. Then, the epitaxial growth region 200 is heated to maintain its temperature at 950°C, and the beam source furnace 100 is heated until its temperature is maintained at 800°C. The pressure in the epitaxial growth region 200 is maintained at 5 mbar, and the pressure in the beam source furnace 100 is always controlled to be 10 mbar higher than that in the epitaxial growth region 200. At this time, the metallic gallium in the crucible 101 forms Ga vapor under high temperature heating, which is carried by the carrier gas N2 or Ar and enters the gas inlet of the epitaxial growth region 200 through the gas flow transport channel with the gas flow shut-off valve 106. At the same time, O2 is introduced into the epitaxial growth region 200 to react with the Ga vapor reaching the substrate 1 end to generate Ga2O3. SiCl4 or GeCl4 gas is also introduced into the epitaxial growth region 200 for doping.
[0047] (4) MOCVD process route
[0048] Since the MOCVD process requires only one temperature zone, the source furnace 100 does not need to be heated, and no gas is needed during epitaxial growth. Before the epitaxial process begins, the source furnace 100 and the epitaxial growth region 200 are purged with N2. After purging, the gas flow shut-off valve 106 is closed, isolating the gas flow channel between the source furnace 100 and the epitaxial growth region 200, ensuring that the two regions are not connected, and maintaining the pressure of the source furnace 100 slightly higher than atmospheric pressure. Then, the temperature of the epitaxial growth region 200 is stabilized at 900℃, and the pressure of the epitaxial growth region 200 is maintained at 600 mbar. TMGa precursor is introduced as the gallium source, and O2 is used as the oxygen source, reacting to generate Ga2O3. SiCl4 or GeCl4 gases are also introduced into the epitaxial growth region 200 for doping.
[0049] The above description is merely a preferred embodiment of this utility model. The protection scope of this utility model is not limited to the above embodiments. All technical solutions falling within the scope of this utility model's concept are protected. It should be noted that for those skilled in the art, any improvements and modifications made without departing from the principle of this utility model should also be considered within the protection scope of this utility model.
Claims
1. A gallium oxide epitaxial device incorporating a beam source furnace and compatible with multiple process routes, characterized in that, include: The system comprises a beam source furnace (100), an epitaxial growth region (200), a conveying system (300), a tail exhaust system (400), and a cooling system (600). The beam source furnace (100) is used to heat Ga metal and provide Ga-containing gas. The epitaxial growth region (200) is used to deposit a gallium oxide thin film on the surface of a substrate (1). The gas inlet of the epitaxial growth region (200) is connected to the beam source furnace (100) through a pipe with a gas flow shut-off valve (106), and the gas inlet of the epitaxial growth region (200) is provided with multiple gas delivery pipes. The exhaust end of the epitaxial growth region (200) is connected to the conveying system (300) and the tail exhaust system (400), respectively. The conveying system (300) is used to transport the substrate (1) into and out of the epitaxial growth region (200), and the tail exhaust system (400) is used to discharge the waste gas in the epitaxial growth region (200). The cooling system (600) is connected to the beam source furnace (100), the epitaxial growth region (200) and the tail exhaust system (400) respectively to achieve cooling of the beam source furnace (100), the epitaxial growth region (200) and the tail exhaust system (400).
2. The gallium oxide epitaxial apparatus according to claim 1, which combines a beam source furnace and is compatible with multiple process routes, is characterized in that... The beam source furnace (100) is inclined upward and positioned on the side of the epitaxial growth zone (200).
3. The gallium oxide epitaxial apparatus according to claim 2, which combines a beam source furnace and is compatible with multiple process routes, is characterized in that... The epitaxial growth region (200) includes an outer wall chamber (201) and an inner wall chamber (203) nested together. The inner wall chamber (203) is provided with a growth chamber, and the substrate (1) is placed in the growth chamber for epitaxial processing.
4. The gallium oxide epitaxial apparatus according to claim 3, which combines a beam source furnace and is compatible with multiple process routes, is characterized in that... The growth chamber includes two graphite heaters (204) that are symmetrically arranged and have a gap between them; the graphite heater (204) located on the lower side is provided with a substrate base for placing the substrate (1), and the substrate base is connected to a rotating mechanism, which drives the substrate base and the substrate (1) to rotate synchronously.
5. The gallium oxide epitaxial apparatus according to claim 3, which combines a beam source furnace and is compatible with multiple process routes, is characterized in that... A heating component is provided on the outside of the outer wall chamber (201), or a heating component is provided between the outer wall chamber (201) and the inner wall chamber (203) to achieve uniform heating of the epitaxial growth region (200).
6. The gallium oxide epitaxial apparatus according to claim 5, which combines a beam source furnace and is compatible with multiple process routes, is characterized in that... The outer wall chamber (201) adopts a double-layer water-cooled structure, which is connected to the cooling system (600).
7. The gallium oxide epitaxial apparatus according to claim 5, which combines a beam source furnace and is compatible with multiple process routes, is characterized in that... A gas equalization component (205) is provided on one side of the inner wall chamber (203). The gas equalization component (205) is connected to the beam source furnace (100) and the gas delivery pipe to achieve uniform distribution of process gas in the inner wall chamber (203).
8. The gallium oxide epitaxial apparatus according to any one of claims 1 to 7, which combines a beam source furnace and is compatible with multiple process routes, is characterized in that... The beam source furnace (100) includes a furnace shell (102), a first heater (103) is provided on the outside of the furnace shell (102), a crucible (101) is provided inside the furnace shell (102), the crucible (101) is used to hold Ga metal, and multiple gas delivery pipes are provided on the side of the furnace shell (102) for delivering process gas into the furnace shell (102); when the first heater (103) heats the furnace shell (102), the Ga metal reacts with the process gas to form Ga-containing gas, which is then delivered to the epitaxial growth region (200).
9. The gallium oxide epitaxial apparatus according to claim 8, which combines a beam source furnace and is compatible with multiple process routes, is characterized in that... The furnace shell (102) is also provided with a heat insulation layer (104) and a water cooling layer (105) on the outside. The heat insulation layer (104) is located between the first heater (103) and the water cooling layer (105). The water cooling layer (105) is connected to the cooling system (600).
10. The gallium oxide epitaxial apparatus according to any one of claims 1 to 7, which combines a beam source furnace and is compatible with multiple process routes, is characterized in that... The tail exhaust system (400) includes a dry pump and a connecting pipe with a butterfly valve. The connecting pipe is connected to a cooling system (600). One end of the connecting pipe is connected to the dry pump, and the other end of the connecting pipe is connected to the epitaxial growth zone (200) to extract the exhaust gas in the epitaxial growth zone (200) and achieve exhaust gas cooling.