Wavelength conversion device and lighting apparatus

Abstract

The utility model discloses a wavelength conversion device and lighting equipment. The wavelength conversion device comprises a supporting piece and a wavelength conversion assembly. The supporting piece is provided with a first area and a second area which are adjacent, and the second area is arranged on the periphery of the first area in a surrounding mode. The wavelength conversion assembly comprises a first wavelength conversion layer and a second wavelength conversion layer, the first wavelength conversion layer covers the first area, and the second wavelength conversion layer covers the second area; wherein the second wavelength conversion layer comprises red fluorescent particles. The second wavelength conversion layer is doped with the red fluorescent particles, so that the specified laser can be converted into red fluorescence under the excitation of the red fluorescent particles. Therefore, when the wavelength conversion device is configured in the illumination equipment, the illumination light generated by the illumination equipment can be mixed with the red light component, so that the color rendering index of the illumination light is improved, and the illumination equipment can meet the application scene with the high color rendering index.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of laser lighting, and more particularly, to a wavelength conversion device and a lighting device. BACKGROUND

[0002] In the existing technical field of laser lighting, a laser excitation fluorescence lighting mode is usually adopted, for example, a blue laser excitation yellow fluorescence can be mixed to form white light.

[0003] However, the white light obtained by this mode will have a low color rendering index due to the lack of red light bands, so that the lighting device cannot meet the application scenarios with high color rendering index. CONTENT OF THE INVENTION

[0004] The present application provides a wavelength conversion device and a lighting device.

[0005] According to a first aspect of the present application, the present application provides a wavelength conversion device, which comprises a support and a wavelength conversion assembly. The support has a first region and a second region adjacent to each other, and the second region is arranged around the outer periphery of the first region. The wavelength conversion assembly comprises a first wavelength conversion layer and a second wavelength conversion layer, the first wavelength conversion layer covers the first region, and the second wavelength conversion layer covers the second region; wherein the second wavelength conversion layer comprises red fluorescent particles.

[0006] In some possible embodiments, the concentration of the red fluorescent particles gradually increases in the direction from the inner side of the second region to the outer side of the second region.

[0007] In some possible embodiments, the ratio between the area of the first region and the area of the second region is greater than or equal to 1:8 and less than or equal to 1:3.

[0008] In some possible embodiments, the first wavelength conversion layer is a yellow fluorescent ceramic layer; or / and, the second wavelength conversion layer is a fluorescent glass film layer.

[0009] In some possible embodiments, the second wavelength conversion layer further comprises at least one of yellow fluorescent particles, green fluorescent particles, and cyan fluorescent particles.

[0010] In some possible embodiments, the wavelength conversion assembly further comprises a first reflective layer, which is arranged in the first region and between the support and the first wavelength conversion layer.

[0011] The wavelength conversion assembly further comprises a second reflective layer and a heat-conducting substrate, both of which are arranged in the second region and are sequentially stacked between the second wavelength conversion layer and the support, and the second reflective layer is arranged on the side of the heat-conducting substrate facing the second wavelength conversion layer; wherein the first reflective layer is a metal reflective film layer or a dielectric reflective film layer; or / and the second reflective layer is a metal reflective film layer or a dielectric reflective film layer.

[0012] In some possible embodiments, the thickness of the second wavelength conversion layer is less than the thickness of the first wavelength conversion layer, and the overall thickness of the wavelength conversion assembly in the first region is the same as the overall thickness of the wavelength conversion assembly in the second region.

[0013] In some possible embodiments, the support comprises a heat-dissipating substrate and a solder layer; the solder layer is connected between the heat-dissipating substrate and the wavelength conversion assembly.

[0014] According to a second aspect of the present application, the embodiments of the present application further provide a lighting device, which comprises a laser light source and the above-described wavelength conversion device. The laser light source is used to generate specified laser light. The wavelength conversion device is arranged on the light path where the specified laser light is located, and is used to convert the specified laser light into specified fluorescent light. The size of the wavelength conversion assembly is greater than or equal to the spot size corresponding to the specified laser light.

[0015] In some possible embodiments, the first region and the second region are both located on the light path where the specified laser light is located, and the spot energy intensity of the specified laser light in the first region is greater than the spot energy intensity of the specified laser light in the second region.

[0016] The present application provides a wavelength conversion device and a lighting device. The wavelength conversion device comprises a support and a wavelength conversion assembly. The support has a first region and a second region which are adjacent to each other, and the second region is arranged around the outer periphery of the first region. For example, the first region can be the central region of the support, and the second region can be the peripheral region of the support. The wavelength conversion assembly comprises a first wavelength conversion layer and a second wavelength conversion layer. The first wavelength conversion layer covers the first region, and the second wavelength conversion layer covers the second region. The second wavelength conversion layer comprises red fluorescent particles.

[0017] It can be understood that, when the specified laser light is incident on the wavelength conversion device, due to the fact that the second region is arranged around the outer periphery of the first region and the energy intensity of the laser light spot is approximately Gaussian distribution, the energy intensity of the laser light spot in the second region is lower than that in the first region.

[0018] In an aspect, since the red fluorescent particles are doped in the second wavelength conversion layer, the specified laser can be converted into red fluorescence under the excitation of the red fluorescent particles. Therefore, when the wavelength conversion device is configured in the lighting device, the red light component can be mixed in the illumination light generated by the lighting device to improve the color rendering index of the illumination light, so that the lighting device can meet the application scenarios of high color rendering index.

[0019] In another aspect, since the second wavelength conversion layer is arranged in the second area with low energy intensity of the laser spot, the case that the high temperature of the specified laser affects the light efficiency of the red fluorescent particles can be reduced or even avoided, so as to ensure the excitation efficiency and thermal stability of the red fluorescence. BRIEF DESCRIPTION OF DRAWINGS

[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor on the basis of these drawings.

[0021] Figure 1 is a structural schematic diagram of a lighting device provided by the embodiments of the present application.

[0022] Figure 2 is Figure 1 is a structural schematic diagram of a wavelength conversion component in the lighting device shown in FIG. 1.

[0023] Figure 3 is Figure 2 is a top view of the wavelength conversion component shown in FIG. 1.

[0024] Figure 4 is a spot energy intensity distribution curve provided by the embodiments of the present application.

[0025] Figure 5 is Figure 1 is another structural schematic diagram of a wavelength conversion component in the lighting device shown in FIG. 1.

[0026] Figure 6 is Figure 1 is still another structural schematic diagram of a wavelength conversion component in the lighting device shown in FIG. 1. DETAILED DESCRIPTION

[0027] In the following, the technical solutions in the embodiments of the present application will be described clearly and completely in conjunction with the accompanying drawings of the embodiments of the present application, so that those skilled in the art can better understand the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of the present application.

[0028] Please refer to Figure 1 The present embodiment provides a wavelength conversion device 100 and a lighting device 200 provided with the wavelength conversion device 100. The lighting device 200 refers to a device for generating illumination light. For example, the lighting device 200 can be a laser illumination lamp, a stage lamp, a car lamp, a searchlight, etc.

[0029] Specifically, the lighting device 200 can include a laser light source 210 and the wavelength conversion device 100, wherein the laser light source 210 is used to generate a specified laser L. The specified laser L is used as the excitation light of the wavelength conversion device 100. For example, the specified laser L can be a blue laser, and the center wavelength of the blue laser can be 450 nm, 455 nm, etc. Of course, in some other possible embodiments, the specified laser L can also be a violet laser, a deep blue laser, etc. Specifically, the laser light source 210 can be a laser generator, for example, a gas laser generator, a solid laser generator, a semiconductor laser generator, etc. The number of laser generators can be multiple to achieve high-power illumination of the lighting device 200.

[0030] The wavelength conversion device 100 is adapted to be arranged on the optical path of the specified laser L, which is used to convert the specified laser L into a specified fluorescent light F, so that the lighting device 200 generates illumination light. Specifically, Figure 1 The wavelength conversion device 100 in the present embodiment adopts a reflective structure, which can improve the excitation efficiency of the specified fluorescent light F. For example, the wavelength conversion device 100 can be a fluorescent color wheel. Of course, in some other possible embodiments, the wavelength conversion device 100 can also adopt a transmissive structure, so that the overall structure of the wavelength conversion device 100 is more simple and compact, which is not limited in the present embodiment.

[0031] In some possible embodiments, the size of the wavelength conversion device 100 is greater than or equal to the spot size corresponding to the specified laser L, which aims to effectively reduce the diffusion area of the specified fluorescent light F inside the wavelength conversion device 100. In addition, it can also ensure that the specified laser L is sufficiently incident to the area where the wavelength conversion device 100 is located, so as to ensure the utilization efficiency of laser energy.

[0032] It is not difficult to understand that, in the process of the specified laser L passing through the wavelength conversion device 100, part of the laser in the specified laser L can not be converted into fluorescent light, and this part of the unconverted laser can be combined with the specified fluorescent light F to form the illumination light emitted to the outside. For example, when blue laser excites yellow fluorescent light, part of the blue laser will not be converted into yellow fluorescent light, and this part of the blue laser will be combined with the excited yellow fluorescent light to form white light (i.e. illumination light).

[0033] Please refer to Figure 2 and Figure 3 , the wavelength conversion device 100 can include a support 10 and a wavelength conversion assembly 30. Among them, the support 10 has a first region 102 and a second region 104 adjacent to each other, and the second region 104 is arranged around the outer periphery of the first region 102. For example, the first region 102 can be the central region of the support 10, and the second region 104 can be the peripheral region of the support 10.

[0034] The wavelength conversion assembly 30 can include a first wavelength conversion layer 320 and a second wavelength conversion layer 340, the first wavelength conversion layer 320 covers the first region 102, and the second wavelength conversion layer 340 covers the second region 104. Among them, the second wavelength conversion layer 340 includes red fluorescent particles (not marked in the figure).

[0035] It is not difficult to understand that, when the specified laser L is incident on the wavelength conversion device 100, due to the second region 104 being arranged around the outer periphery of the first region 102, and the energy intensity of the laser spot is approximately Gaussian distribution, so that the energy intensity of the laser spot in the second region 104 will be lower than that in the first region 102. For details, please refer to Figure 4 , Figure 4 , the spot energy distribution of the specified laser L is Gaussian distribution, that is, the energy distribution is strong in the middle and weak in the periphery. In this case, the first region 102 can be regarded as the main spot region of the specified laser L, and the second region can be regarded as the non-main spot region of the specified laser L. That is, the spot energy intensity of the specified laser L in the first region 102 is greater than that in the second region 104.

[0036] In one aspect, since the second wavelength conversion layer 340 is doped with red fluorescent particles, the red fluorescent particles can be converted into red fluorescent light under the excitation of the specified laser L. Therefore, when the wavelength conversion device 100 is configured in the illumination device 200, the illumination light generated by the illumination device 200 can mix with the red component to improve the color rendering index of the illumination light, so that the illumination device 200 can meet the application scene of high color rendering index.

[0037] In another aspect, since the second wavelength conversion layer 340 is arranged in the second region 104 with lower energy intensity of the laser spot, the situation that the specified laser L with higher light intensity affects the light efficiency of the red fluorescent particles can be reduced or even avoided, so as to ensure the excitation efficiency and thermal stability of the red fluorescent particles.

[0038] In some possible embodiments, the size of the wavelength conversion assembly 30 is greater than or equal to the spot size corresponding to the specified laser L, which can effectively reduce the diffusion area of the specified fluorescent light F inside the wavelength conversion assembly 30. In addition, it can also ensure that the specified laser L is sufficiently incident to the region where the wavelength conversion assembly 30 is located, so as to ensure the utilization efficiency of the laser energy.

[0039] The specific structure of the wavelength conversion device 100 will be introduced below.

[0040] In the embodiment, the support 10 is generally block-shaped, which is used to fix and support the wavelength conversion assembly 30. The support 10 has the first region 102 and the second region 104 adjacent to each other. Specifically, the first region 102 can be generally circular or square. The second region 104 is arranged around the outer periphery of the first region 102 and can be generally annular, for example, a circular ring or a square ring.

[0041] It should be noted that there can be an obvious boundary between the first region 102 and the second region 104, or there can be no obvious boundary. For example, the developer can determine the first region 102 and the second region 104 according to the size and specific energy distribution of the laser spot formed by the specified laser L on the wavelength conversion device 100.

[0042] Please refer to Figure 5 The support 10 can include a heat dissipation substrate 120 and a solder layer 140 connected between the heat dissipation substrate 120 and the wavelength conversion assembly 30. The heat dissipation substrate 120 has high thermal conductivity to quickly conduct away the heat generated due to the irradiation of the specified laser L, so as to ensure the service life of the wavelength conversion device 100.

[0043] As an implementation manner, the heat dissipation substrate 120 can be a ceramic heat dissipation substrate, for example, an aluminum nitride substrate, an aluminum oxide substrate, a boron nitride substrate, a silicon nitride substrate, etc. As another implementation manner, the heat dissipation substrate 120 can be a metal heat dissipation substrate, for example, an aluminum alloy substrate, a copper alloy substrate, etc.

[0044] The solder layer 140 is used to fixedly connect the heat dissipation substrate 120 and the wavelength conversion component 30, so as to improve the overall connection reliability of the wavelength conversion device 100. Specifically, the solder layer 140 can be a sintered silver paste layer or a tin-based solder layer. Further, since the material of the solder layer 140 is generally metal, the solder layer 140 can also play a role in conducting heat, specifically, conducting the heat of the wavelength conversion component 30 to the heat dissipation substrate 120, so as to improve the heat dissipation efficiency of the wavelength conversion device 100.

[0045] In another possible embodiment, the wavelength conversion device 100 can adopt a transmissive structure. In this case, the support 10 can be a transparent substrate, for example, a transparent sapphire substrate, so as to improve the overall wear resistance of the wavelength conversion device 100 in the case of having higher transmittance, so as to ensure the service life of the wavelength conversion device 100. Of course, the support 10 can also be a glass substrate.

[0046] In the present embodiment, the wavelength conversion component 30 is connected to the support 10, which is used to convert the specified laser L into the specified fluorescent light F. Exemplarily, the specified fluorescent light F can be a mixed fluorescent light of multiple colors, for example, a mixed fluorescent light of red fluorescent light, yellow fluorescent light and green fluorescent light. Therefore, when the wavelength conversion device 100 is configured in the lighting device 200, the color rendering index of the illumination light generated by the lighting device 200 can be improved.

[0047] In some possible embodiments, the size of the wavelength conversion component 30 is greater than or equal to the spot size corresponding to the specified laser L, so that the specified laser L can be fully incident to the wavelength conversion component 30, so as to ensure the excitation efficiency of the specified fluorescent light F.

[0048] Specifically, the wavelength conversion component 30 can include a first wavelength conversion layer 320 and a second wavelength conversion layer 340, the first wavelength conversion layer 320 covers the first region 102, and the wavelength band of the fluorescent light generated by the first wavelength conversion layer 320 does not coincide with the red light wavelength band, for example, the fluorescent light generated by the first wavelength conversion layer 320 can be yellow fluorescent light, green fluorescent light, etc. Specifically, the first wavelength conversion layer 320 can be a yellow fluorescent ceramic layer, for example, a YAG: Ce-Al2O3 composite yellow fluorescent ceramic layer, which has high thermal conductivity and stability. Therefore, in the case that the specified laser L is blue laser, the first wavelength conversion layer 320 can generate yellow fluorescent light.

[0049] In some possible embodiments, the shape and area of the first wavelength conversion layer 320 can be substantially equal to the shape and area of the first region 102, so that the first wavelength conversion layer 320 can sufficiently cover the first region 102.

[0050] The second wavelength conversion layer 340 covers the second area 104, that is, the second wavelength conversion layer 340 is arranged around the outer periphery of the first wavelength conversion layer 320. Specifically, the second wavelength conversion layer 340 can be a fluorescent glass film layer in which red fluorescent particles are doped to convert the specified laser L into red fluorescence. Specifically, the red fluorescent particles can be nitride fluorescent particles. For example, the red fluorescent particles can use Si3N4 as a raw material. It is not difficult to understand here that, since the thermal stability of Si3N4 is slightly poorer than that of the first wavelength conversion layer 320, the second wavelength conversion layer 340 is arranged in the second area 104 where the energy intensity of the laser spot is small in the present embodiment, which can ensure the thermal stability of the red fluorescent particles.

[0051] The "fluorescent glass film layer" here refers to a fluorescent film in which a glass matrix is doped with fluorescent particles. That is, in the present application, the second wavelength conversion layer 340 adopts a glass matrix inorganic packaging manner, which has better thermal conductivity than the organic packaging manner of silicone or resin, so as to avoid the yellowing phenomenon of the fluorescent glass film layer under long-time irradiation of high-power laser, thereby ensuring the excitation efficiency of the specified fluorescent F.

[0052] In addition, since the red fluorescent particles mainly use Si3N4 as a raw material, and the diffusion coefficient of Si3N4 is low, it is difficult to directly prepare a fluorescent ceramic material with good performance using this raw material. For example, the main raw material of the red fluorescent particles can include at least one of: CaAlSiN3:Eu 2+ , (Ca, Sr) AlSiN3: Eu 2+ , (Ca, Ba) AlSiN3: Eu 2+ or (Ca, Sr, Ba) AlSiN3: Eu 2+ Therefore, the present embodiment adopts a glass matrix inorganic packaging manner, so that Si3N4 can be fully dispersed in the fluorescent glass film layer to ensure the excitation efficiency of the red fluorescence.

[0053] Further, compared with the fluorescent glass film layer, the yellow fluorescent ceramic layer has higher thermal conductivity and can withstand high-power density laser irradiation. Therefore, the wavelength conversion assembly 30 in the present embodiment can be applied in a high-power laser lighting scene, and has higher color rendering index and working reliability.

[0054] In some possible embodiments, the shape and area of the second wavelength conversion layer 340 can be substantially equal to the shape and area of the second area 104, so that the second wavelength conversion layer 340 can fully cover the second area 104.

[0055] In some possible embodiments, the second wavelength conversion layer 340 can further include at least one of green fluorescent particles, cyan fluorescent particles, and yellow fluorescent particles, which are also used to convert the specified laser L into at least one of green fluorescence, cyan fluorescence, and yellow fluorescence, so as to improve the color rendering index of the illumination light. Specifically, the yellow fluorescent particles can be cerium-doped yttrium aluminum garnet (Ce:YAG) scintillating crystal particles, the cyan fluorescent particles can be aluminate particles, and the green fluorescent particles can be aluminate (LuAG) particles.

[0056] In some possible embodiments, a ratio between the area of the first region 102 and the area of the second region 104 is greater than or equal to 1:8 and less than or equal to 1:3. For example, the ratio can be 1:8, 1:6, 1:5, 1:3, or the like. Therefore, the wavelength conversion assembly 30 in this embodiment can avoid the phenomenon that the fluorescent glass film layer may be yellow or even burnt under long-time irradiation of high-power laser, thereby ensuring the excitation efficiency of red fluorescence.

[0057] In some possible embodiments, the concentration of the red fluorescent particles gradually increases in a direction from the inner side of the second region 104 to the outer side of the second region 104. Here, the "inner side of the second region" can be understood as the side of the second region close to the first region, and the "outer side of the second region" can be understood as the side of the second region away from the first region.

[0058] Please refer to Figure 6 The second wavelength conversion layer 340 can include a first film layer 3410, a second film layer 3430, and a third film layer 3450, the first film layer 3410, the second film layer 3430, and the third film layer 3450 are annular and are nested in sequence in a direction from the inner side of the second region 104 to the outer side of the second region 104. That is, the first film layer 3410 is an inner ring, the third film layer 3450 is an outer ring, and the second film layer 3430 is an intermediate ring.

[0059] Specifically, the concentration of the red fluorescent particles in the third film layer 3450 is greater than the concentration of the red fluorescent particles in the second film layer 3430, and the concentration of the red fluorescent particles in the second film layer 3430 is greater than the concentration of the red fluorescent particles in the first film layer 3410. For example, the ratio of the red fluorescent particles to the glass matrix in the first film layer 3410 can be 1.5:1, the ratio of the red fluorescent particles to the glass matrix in the second film layer 3430 can be 2.5:1, and the ratio of the red fluorescent particles to the glass matrix in the third film layer 3450 can be 4:1.

[0060] Therefore, in the embodiment, the concentration of the red fluorescent particles in the second wavelength conversion layer 340 is non-uniformly distributed, and the researchers can adjust the overlapping area of the specified laser L and the second area 104 by adjusting the spot size to adjust the proportion of red fluorescence in the illumination light, so as to realize different color rendering indexes and enrich the application scenarios of the lighting device 200.

[0061] Further, when the specified laser L covers the entire second area 104, since the spot energy distribution of the specified laser L is Gaussian distribution, that is, the energy distribution is strong in the middle and weak in the periphery. That is, the laser intensity gradually weakens away from the center of the laser spot, and the concentration of red fluorescent particles gradually increases in the direction away from the center of the laser spot. Therefore, the laser energy intensity incident to the third film layer 3450 is the lowest, so that the third film layer 3450 can excite more red laser.

[0062] Please refer to Figure 5 , the wavelength conversion assembly 30 can further include a second reflective layer 350 and a heat-conducting substrate 360, which are arranged in the second area 104 and are sequentially stacked between the second wavelength conversion layer 340 and the support 10. The second reflective layer 350 is arranged on the side of the heat-conducting substrate 360 facing the second wavelength conversion layer 340, and is used for reflecting light. That is, the wavelength conversion device 100 in the embodiment adopts a reflective structure.

[0063] In one aspect, the second reflective layer 350 can reflect the specified laser L. Specifically, during the process that the specified laser L passes through the second wavelength conversion layer 340, there can be part of the laser that is not converted into fluorescent light. At this time, this part of the laser will be reflected back to the second wavelength conversion layer 340 by the second reflective layer 350 to realize secondary excitation of the fluorescent light.

[0064] Therefore, compared with the transmissive wavelength conversion device 100, the reflective wavelength conversion device 100 has higher fluorescent excitation efficiency. Of course, it is not difficult to understand that during the process that the specified laser L passes through the second wavelength conversion layer 340 twice, there can still be part of the laser that is not converted into fluorescent light, and this part of the laser will be emitted to the outside to combine with the specified fluorescent light F to generate illumination light.

[0065] In another aspect, the second reflective layer 350 can reflect the fluorescent light (for example, red fluorescent light) generated by the second wavelength conversion layer 340. Specifically, since the fluorescent light is Lambertian light, that is, part of the fluorescent light will be emitted toward the side of the second reflective layer 350. Therefore, the second reflective layer 350 in the embodiment is also used for reflecting this part of the fluorescent light to improve the energy utilization efficiency of the fluorescent light. Specifically, the second reflective layer 350 can be a metal reflective film layer or a dielectric reflective film layer.

[0066] The heat-conductive substrate 360 is connected between the second reflective layer 350 and the solder layer 140, and can quickly conduct away the heat on the second wavelength conversion layer 340 and the second reflective layer 350, so as to ensure the service life of the second wavelength conversion layer 340 and improve the excitation efficiency of the red fluorescence. As an embodiment, the heat-conductive substrate 360 can be a ceramic heat-conductive substrate, for example, an aluminum nitride (AIN) substrate, an aluminum oxide substrate, a boron nitride substrate, a silicon nitride substrate, etc. As another embodiment, the heat-conductive substrate 360 can be a metal heat-conductive substrate, for example, an aluminum alloy substrate, a copper alloy substrate, etc.

[0067] Therefore, the second wavelength conversion layer 340 in the embodiment can be "doubly" heat-conducted through the heat-conductive substrate 360 and the heat-dissipating substrate 120, and the heat generated by the irradiation of the specified laser L can be more efficiently conducted away, so that the wavelength conversion device 100 can be applied in a high-power laser lighting scenario.

[0068] In Figure 5 In the embodiment shown, the wavelength conversion assembly 30 can further include a first reflective layer 330, which is disposed in the first region 102 and located between the support 10 and the first wavelength conversion layer 320, and is used for reflecting light. In an aspect, the first reflective layer 330 can reflect the specified laser L. Specifically, during the process that the specified laser L passes through the first wavelength conversion layer 320, there can be part of the laser that is not converted into fluorescence. At this time, this part of the laser is reflected back to the first wavelength conversion layer 320 by the first reflective layer 330, so as to realize secondary excitation of the fluorescence.

[0069] In another aspect, the first reflective layer 330 can reflect the fluorescence (for example, yellow fluorescence) generated by the first wavelength conversion layer 320. Specifically, since the fluorescence is Lambertian light, that is, there is part of the fluorescence that is emitted toward the side of the first reflective layer 330. Therefore, the first reflective layer 330 in the embodiment is also used for reflecting this part of the fluorescence, so as to improve the energy utilization efficiency of the fluorescence. Specifically, the first reflective layer 330 is a metal reflective film layer or a dielectric reflective film layer.

[0070] As an embodiment, in the case that the first wavelength conversion layer 320 is a yellow fluorescent ceramic layer, a metal film can be sputtered on one side of the yellow fluorescent ceramic layer after polishing by a magnetron sputtering method, so as to form the above-mentioned first reflective layer 330. Specifically, the thickness of the first reflective layer 330 can be greater than or equal to 100 nm and less than or equal to 300 nm. For example, the thickness is 100 nm, 200 nm, 300 nm, etc.

[0071] In some possible embodiments, the thickness of the second wavelength conversion layer 340 is less than the thickness of the first wavelength conversion layer 320. For example, the thickness of the second wavelength conversion layer 340 may be greater than or equal to 30 μm and less than or equal to 80 μm; exemplaryly, the thickness of the second wavelength conversion layer 340 may be 30 μm, 50 μm, 70 μm, 80 μm, etc. The thickness of the first wavelength conversion layer 320 may be greater than or equal to 200 μm and less than or equal to 400 μm; exemplaryly, the thickness of the first wavelength conversion layer 320 may be 200 μm, 250 μm, 320 μm, 400 μm, etc.

[0072] Furthermore, the overall thickness of the wavelength conversion component 30 in the first region 102 is the same as the overall thickness in the second region 104. For example... Figure 5 As shown, the “overall thickness of the wavelength conversion component 30 in the first region 102” can be understood as the sum of the thicknesses of the first wavelength conversion layer 320 and the first reflective layer 330; the “overall thickness of the wavelength conversion component 30 in the second region 104” can be understood as the sum of the thicknesses of the second wavelength conversion layer 340, the second reflective layer 350 and the thermally conductive substrate 360.

[0073] It is not difficult to see that since the thickness of the second wavelength conversion layer 340 is less than that of the first wavelength conversion layer 320, the thinner second wavelength conversion layer 340 is more conducive to conducting heat from the second wavelength conversion layer 340 to the thermally conductive substrate 360, thereby improving the overall heat dissipation performance of the wavelength conversion component 30 and the service life of the second wavelength conversion layer 340.

[0074] Furthermore, when the thickness of the first reflective layer 330 and the thickness of the second reflective layer 350 are approximately equal, the thermally conductive substrate 360 ​​provided in the second region 104 can also "compensate" for the thickness difference, so that the overall thickness of the wavelength conversion component 30 in the first region 102 and the second region 104 can be equal, ensuring the flatness of the wavelength conversion component 30 and making it more conducive to the welding of the wavelength conversion component 30 and the solder layer 140.

[0075] This application provides a wavelength conversion device 100 and a lighting device 200 equipped with the wavelength conversion device 100. The wavelength conversion device 100 may include a support member 10 and a wavelength conversion assembly 30. The support member 10 has a first region 102 and a second region 104 adjacent to each other, with the second region 104 surrounding the outer periphery of the first region 102. The wavelength conversion assembly 30 may include a first wavelength conversion layer 320 and a second wavelength conversion layer 340, with the first wavelength conversion layer 320 covering the first region 102 and the second wavelength conversion layer 340 covering the second region 104. The second wavelength conversion layer 340 includes red fluorescent particles.

[0076] In an aspect, since the red fluorescent particles are doped in the second wavelength conversion layer 340, the specified laser L can be converted into red fluorescence under the excitation of the red fluorescent particles. Therefore, when the wavelength conversion device 100 is configured in the lighting device 200, the red light component can be mixed in the illumination light generated by the lighting device 200, so as to improve the color rendering index of the illumination light, so that the lighting device 200 can meet the application scenarios of high color rendering index.

[0077] In another aspect, since the second wavelength conversion layer 340 is arranged in the second region 104 with low energy intensity of the laser spot, the case that the high temperature specified laser L affects the light efficiency of the red fluorescent particles can be reduced or even avoided, so as to ensure the excitation efficiency and thermal stability of the red fluorescence.

[0078] In the present application, some terms are used in the specification and claims to refer to certain components. Those skilled in the art should understand that the same components can be referred to by different names by hardware manufacturers. The specification and claims do not distinguish components by name difference, but by functional difference. As mentioned throughout the specification and claims, "including" is an open term, which should be interpreted as "including but not limited to"; "approximately" means that those skilled in the art can solve technical problems within a certain error range and basically achieve technical effects.

[0079] In the description of the present application, it should be understood that the terms "upper", "lower", "front", "back", "left", "right", "inside" and the like indicate the orientation or positional relationship shown in the drawings, and are only used to simplify the description of the present application, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application.

[0080] In the present application, unless otherwise specified or limited, the terms "mounting", "connection", "connection", "fixing" and the like should be interpreted broadly. For example, it can be fixedly connected, or detachably connected, or integrally connected; it can be mechanically connected, or electrically connected; it can be directly connected, or indirectly connected through an intermediate medium, or the internal communication of two elements, or only surface contact. Those skilled in the art can understand the specific meaning of the above terms in the present application according to the specific circumstances.

[0081] In the description of the specification, the description of the terms "one embodiment", "some embodiments", "an example", "a specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the specification, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any appropriate manner in any one or more embodiments or examples. In addition, the person skilled in the art can combine and combine the different embodiments or examples described in the specification and the features of the different embodiments or examples without contradiction.

[0082] In addition, the terms "first", "second" are only for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with "first", "second" can explicitly or implicitly include at least one of the features. In the description of the present application, the meaning of "a plurality of" is at least two, for example, two, three, etc., unless otherwise specifically limited.

[0083] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, and not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art will understand that they can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement for part of the technical features; and these modifications or replacements do not drive the essence of the corresponding technical solutions out of the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A wavelength conversion device, characterized by, The wavelength conversion device comprises: a support having a first region and a second region adjacent to each other, the second region being arranged around the outer periphery of the first region; and a wavelength conversion assembly comprising a first wavelength conversion layer and a second wavelength conversion layer, the first wavelength conversion layer covering the first region, and the second wavelength conversion layer covering the second region; wherein the second wavelength conversion layer comprises red fluorescent particles.

2. The wavelength conversion device of claim 1, wherein, In a direction from the inside of the second region to the outside of the second region, the concentration of the red fluorescent particles gradually increases.

3. The wavelength conversion device of claim 1, wherein, The ratio between the area of the first region and the area of the second region is greater than or equal to 1:8 and less than or equal to 1:

3.

4. The wavelength conversion device of claim 1, wherein, The first wavelength conversion layer is a yellow fluorescent ceramic layer; or / and The second wavelength conversion layer is a fluorescent glass film layer.

5. The wavelength conversion device of claim 1, wherein, The second wavelength conversion layer further comprises at least one of yellow fluorescent particles, green fluorescent particles, and cyan fluorescent particles. 6.The wavelength conversion apparatus according to any one of claims 1 to 5, wherein The wavelength conversion assembly further comprises a first reflective layer arranged in the first region and located between the support and the first wavelength conversion layer; The wavelength conversion assembly further comprises a second reflective layer and a heat-conducting substrate, both of which are arranged in the second region and are sequentially stacked between the second wavelength conversion layer and the support, the second reflective layer being arranged on the side of the heat-conducting substrate facing the second wavelength conversion layer; wherein the first reflective layer is a metal reflective film layer or a dielectric reflective film layer; or / and the second reflective layer is a metal reflective film layer or a dielectric reflective film layer.

7. The wavelength conversion device of claim 6, wherein, The thickness of the second wavelength conversion layer is less than the thickness of the first wavelength conversion layer, and the overall thickness of the wavelength conversion assembly in the first region is the same as the overall thickness of the wavelength conversion assembly in the second region.

8. The wavelength conversion device of any of claims 1 to 5, wherein, The support comprises a heat-dissipating substrate and a solder layer; The solder layer is connected between the heat-dissipating substrate and the wavelength conversion assembly.

9. An illumination device, characterized by The wavelength conversion device comprises: a laser light source for generating a specified laser light; and a wavelength conversion device as claimed in any one of claims 1 to 8, the wavelength conversion device being arranged on an optical path of the specified laser light, the wavelength conversion device being configured to convert the specified laser light into specified fluorescent light, wherein the size of the wavelength conversion assembly is greater than or equal to the spot size corresponding to the specified laser light.

10. The lighting device of claim 9, characterized in that Both the first region and the second region are located on the optical path of the specified laser light, and the spot energy intensity of the specified laser light in the first region is greater than the spot energy intensity of the specified laser light in the second region.

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