Display device

Abstract

The utility model relates to a display device. The display device includes: a substrate including an emission area and a sensing area; a light emitting device disposed on the substrate to correspond to the emission region; a light receiving device disposed on the substrate to correspond to the sensing area; and an up-conversion device covering the light receiving device.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2024-0035983, filed on March 14, 2024, with the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] One or more embodiments of this utility model relate to the structure of a display device. Background Technology

[0004] Typically, a display device includes a light-emitting device such as an organic light-emitting diode (OLED) and a thin-film transistor disposed on a substrate and operated by emitting light from the light-emitting device.

[0005] For example, each pixel of a display device has a light-emitting device such as an organic light-emitting diode (OLED), in which an intermediate layer, including an emitting layer, is disposed between the pixel electrode and the counter electrode. In a display device, whether light is emitted or the degree of light emission of each pixel is typically controlled by a thin-film transistor electrically connected to the pixel electrode. Some layers included in the intermediate layer of the light-emitting device may be provided jointly for multiple light-emitting devices. Utility Model Content

[0006] According to an embodiment of the present invention, a display device includes: a substrate including an emitting region and a sensing region; a light-emitting device disposed on the substrate corresponding to the emitting region; a light-receiving device disposed on the substrate corresponding to the sensing region; and an up-conversion device covering the light-receiving device.

[0007] In an embodiment of the present invention, the upconversion device is configured to convert light in a first wavelength band into light in a second wavelength band and emit the converted light, wherein the upconversion device is configured to receive light in the first wavelength band from the outside, and the light in the second wavelength band has a wavelength shorter than that of the light in the first wavelength band.

[0008] In an embodiment of the present invention, the upconversion device is configured to convert light in the near-infrared wavelength band into light in the visible light wavelength band and emit the converted light, wherein the upconversion device is configured to receive light in the near-infrared wavelength band from the outside.

[0009] In an embodiment of this invention, the light receiving device includes: a sensing electrode; an active layer disposed on the sensing electrode; and a counter electrode disposed on the active layer.

[0010] In an embodiment of this utility model, the light-emitting device includes: a pixel electrode; an emitting layer disposed on the pixel electrode; and a counter electrode disposed on the emitting layer.

[0011] In embodiments of this invention, the counter electrode of the light receiving device and the counter electrode of the light emitting device are formed as a single unit on the substrate.

[0012] In an embodiment of this utility model, the up-conversion device includes: a lower auxiliary electrode disposed on the counter electrode; an auxiliary intermediate layer disposed on the lower auxiliary electrode; and an upper auxiliary electrode disposed on the auxiliary intermediate layer.

[0013] In an embodiment of this utility model, the auxiliary intermediate layer includes: an auxiliary emission layer disposed on the lower auxiliary electrode; and an auxiliary active layer disposed on the auxiliary emission layer.

[0014] In an embodiment of this utility model, the display device further includes: a cover layer disposed between the counter electrode and the lower auxiliary electrode.

[0015] In an embodiment of this utility model, the up-conversion device includes: an auxiliary intermediate layer disposed on the counter electrode; and an upper auxiliary electrode disposed on the auxiliary intermediate layer.

[0016] In an embodiment of this utility model, the auxiliary intermediate layer includes: an auxiliary emitter layer disposed on the counter electrode; and an auxiliary active layer disposed on the auxiliary emitter layer.

[0017] In an embodiment of this invention, the upper surface of the counter electrode and the lower surface of the auxiliary intermediate layer are in contact with each other.

[0018] In embodiments of this invention, the counter electrode of the optical receiver is also used as the lower auxiliary electrode of the up-conversion device.

[0019] In an embodiment of this utility model, the display device further includes a thin-film encapsulation layer disposed on the light-emitting device and the up-conversion device.

[0020] According to an embodiment of the present invention, a display device includes: a substrate; a light-emitting device disposed on the substrate, and including a pixel electrode, an emitting layer disposed on the pixel electrode, and a counter electrode disposed on the emitting layer; a light-receiving device disposed on the substrate, and including a sensing electrode, an active layer disposed on the sensing electrode, and a counter electrode disposed on the active layer; and an up-conversion device overlapping the light-receiving device, and including an auxiliary intermediate layer and an upper auxiliary electrode disposed on the auxiliary intermediate layer.

[0021] In an embodiment of the present invention, the upconversion device is configured to convert light in a first wavelength band into light in a second wavelength band and emit the converted light, wherein the upconversion device is configured to receive light in the first wavelength band from the outside, and the light in the second wavelength band has a wavelength shorter than that of the light in the first wavelength band.

[0022] In an embodiment of this utility model, the auxiliary intermediate layer includes: an auxiliary emission layer disposed on the optical receiving device; and an auxiliary active layer disposed on the auxiliary emission layer.

[0023] In an embodiment of this utility model, the up-conversion device further includes a lower auxiliary electrode, disposed between the counter electrode of the light receiver and the auxiliary intermediate layer.

[0024] In an embodiment of this utility model, the display device further includes a cover layer disposed between the counter electrode and the lower auxiliary electrode of the light receiving device.

[0025] In an embodiment of this invention, the upper surface of the counter electrode of the light receiving device and the lower surface of the auxiliary intermediate layer are in contact with each other.

[0026] In embodiments of this invention, the counter electrode of the optical receiver is used in both the optical receiver and the up-conversion device. Attached Figure Description

[0027] The above and other aspects and features of the present invention will become more apparent from the detailed description of embodiments of the present invention with reference to the accompanying drawings, in which:

[0028] Figure 1 This is a schematic plan view of a part of a display device according to an embodiment of the present utility model;

[0029] Figure 2A and Figure 2B Each is a schematic cross-sectional view of a display device according to an embodiment of the present utility model;

[0030] Figure 3 This is a circuit diagram of a pixel circuit electrically connected to the light-emitting device of a display device and a sensor circuit electrically connected to the light-receiving device of a display device, according to an embodiment of the present invention.

[0031] Figure 4 This is a schematic plan view of a part of a display device according to an embodiment of the present utility model;

[0032] Figure 5 This is a schematic cross-sectional view of a part of a display device according to an embodiment of the present invention;

[0033] Figure 6 This is a schematic concept diagram of a part of a display device according to an embodiment of the present utility model;

[0034] Figure 7 This is a schematic cross-sectional view of a part of a display device according to an embodiment of the present invention;

[0035] Figure 8This is a block diagram of an electronic device according to an embodiment of the present invention; and

[0036] Figure 9 These are schematic diagrams of electronic devices according to various embodiments. Detailed Implementation

[0037] Embodiments of the present invention will now be described more fully with reference to the accompanying drawings. It should be understood that the present invention may be embodied in different forms and therefore should not be construed as limited to the embodiments set forth herein. It should be understood that throughout the specification, the same reference numerals may refer to the same elements, and therefore redundant descriptions may be omitted. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. Throughout the disclosure, the expression "at least one of a, b, and c" means only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof.

[0038] It will be understood that although the terms “first,” “second,” etc., may be used herein to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are used only to distinguish one element, component, area, layer, or portion from another. Therefore, the first element, component, area, layer, or portion discussed below may be referred to as the second element, component, area, layer, or portion without departing from the spirit and scope of this utility model.

[0039] It will be understood that, unless the context clearly indicates otherwise, the singular form includes the plural form.

[0040] It will be understood that when an element or layer is referred to as being "on" another element or layer, that element or layer may be directly on the other element or layer or there may be an intervening element or layer.

[0041] Various thicknesses, lengths, and angles are shown in the accompanying drawings, and while the arrangements shown do represent embodiments of the present invention, it should be understood that various modifications can be made to the thicknesses, lengths, and angles within the spirit and scope of the present invention, and the present invention is not necessarily limited to the specific thicknesses, lengths, or angles shown.

[0042] When embodiments can be implemented differently, a particular order of processing can be performed differently than the order in which they are described. For example, two consecutively described processes can be performed substantially simultaneously or in the reverse order of their description.

[0043] In the following embodiments, when a layer, area, or element is referred to as being "connected to" another layer, area, or element, it can be directly or indirectly connected to the other layer, area, or element. That is, for example, when a layer, area, or element is indirectly connected to another layer, area, or element, an intermediary layer, area, or element may exist. For example, when a layer, area, or element is referred to as being "electrically connected to" another layer, area, or element, it can be directly or indirectly electrically connected to the other layer, area, or element. That is, for example, when a layer, area, or element is indirectly electrically connected to another layer, area, or element, an intermediary layer, area, or element may exist.

[0044] Figure 1 This is a schematic plan view of a part of the display device 1 according to an embodiment of the present utility model.

[0045] refer to Figure 1 The display device 1 may include a display area DA in which a plurality of pixels PX are arranged, and a peripheral area PA located outside the display area DA. For example, the peripheral area PA may completely surround the display area DA. The above can be understood as the substrate 100 included in the display device 1 (see Figure 5 It has a display area DA and a peripheral area PA.

[0046] Each pixel PX of the display device 1 refers to the smallest unit used to display an image, and the display device 1 can display a desired image by combining multiple pixels PX. For example, each pixel PX can emit light of a specific color, and the display device 1 can display a desired image by using the light emitted from the pixel PX. For example, each pixel PX can emit red light, green light, or blue light. Each pixel PX may include a light-emitting device such as an organic light-emitting diode. Pixel PX can be connected to pixel circuitry including thin-film transistors and storage capacitors.

[0047] like Figure 1 As shown, the display area DA can have a polygonal shape, including a quadrilateral shape. For example, the display area DA can have a rectangular shape with a horizontal length greater than the vertical length, a rectangular shape with a horizontal length less than the vertical length, or a square shape. In addition, the display area DA can have various shapes such as an ellipse or a circle.

[0048] The peripheral area PA can be a non-display area where no pixels PX are located. Drivers and the like, used to supply electrical signals or power to the pixels PX, can be located in the peripheral area PA. Pads to which various electronic devices or printed circuit boards can be electrically connected can be located in the peripheral area PA. The pads can be arranged separately from each other in the peripheral area PA and can each be electrically connected to a printed circuit board or integrated circuit device.

[0049] Figure 2A and Figure 2B Each of these is a schematic cross-sectional view of the display device 1 according to an embodiment of the present utility model.

[0050] refer to Figure 2A and Figure 2B In addition to multiple pixel PX (see Figure 1 In addition to the above, the display device 1 according to an embodiment of the present invention may further include an optical sensor. Multiple pixels PX (see...) Figure 1 Each of the following can include at least one of a first light-emitting device ED1, a second light-emitting device ED2, and a third light-emitting device ED3, and the optical sensor can include a first light-receiving device PD1. The first light-emitting device ED1, the second light-emitting device ED2, and the third light-emitting device ED3 can emit light of different colors from each other. For example, the first light-emitting device ED1 can emit green light. Furthermore, the second light-emitting device ED2 can emit blue light, and the third light-emitting device ED3 can emit red light.

[0051] In embodiments of this invention, in addition to the first to third light-emitting devices ED1, ED2, and ED3, the display device 1 may further include an auxiliary light-emitting device ED4. The emitting layer of the auxiliary light-emitting device ED4 can emit light having a wavelength longer than the light emitted from each of the first, second, and third light-emitting devices ED1, ED2, and ED3. For example, the emitting layer of the auxiliary light-emitting device ED4 can emit light in the near-infrared wavelength band. Figure 2A and Figure 2B As shown, the auxiliary light-emitting device ED4 can be arranged on the same layer as the first light-emitting device ED1, the second light-emitting device ED2, and the third light-emitting device ED3, but the embodiment is not limited to this. In the embodiments of this utility model, the auxiliary light-emitting device ED4 can be arranged outside the display device 1, for example, below the substrate 100. Furthermore, in the embodiments of this utility model, the auxiliary light-emitting device ED4 can be omitted.

[0052] The first up-conversion device UCD1 can be disposed on the first optical receiver PD1. The first up-conversion device UCD1 can convert light with low energy into light with high energy. For example, the first up-conversion device UCD1 can convert light with a long wavelength into light with a short wavelength. For example, the first up-conversion device UCD1 can convert light in the near-infrared wavelength band into light in the visible light wavelength band and emit the converted light. However, embodiments of the present invention are not limited thereto, and even within the visible light wavelength band, the first up-conversion device UCD1 can convert light with a long wavelength into light with a short wavelength. For example, the first up-conversion device UCD1 can convert red light into green light.

[0053] like Figure 2A As shown, the display device 1 may have the function of sensing an object (e.g., a fingerprint of finger F) in contact with the cover window CW. Of the light emitted from at least one of the first light-emitting device ED1, the second light-emitting device ED2, and the third light-emitting device ED3, at least a portion of the emitted light may be reflected by the user's fingerprint, and at least a portion of the reflected light (reflected by the user's fingerprint) may be re-intruded onto the first light-receiving device PD1, thus allowing the first light-receiving device PD1 to detect the reflected light. For example, green light emitted from the first light-emitting device ED1 may be reflected by an object in contact with the cover window CW and re-intruded onto the first light-receiving device PD1, thus allowing the first light-receiving device PD1 to detect the re-intruded green light.

[0054] In addition, such as Figure 2B As shown, the display device 1 may have the function of sensing biometric information or touch information of an object (e.g., a finger F) in contact with the cover window CW. For example, light in the near-infrared wavelength band emitted from the auxiliary light-emitting device ED4 can be reflected by the object and then re-intruded onto the first up-conversion device UCD1. The light in the near-infrared wavelength band input to the first up-conversion device UCD1 can be converted into light in the visible light wavelength band and then emitted. Subsequently, the light in the visible light wavelength band emitted from the first up-conversion device UCD1 can be incident onto the first light receiving device PD1, and therefore, the first light receiving device PD1 can detect the light in the near-infrared wavelength band reflected by the object.

[0055] Light in the near-infrared band has a longer wavelength and therefore can penetrate deeper into an object than light in the visible light band, thus ensuring a wider variety of sensing information (such as biometric information). For example, the absorption rate of light in the near-infrared band (or, for example, red light) can change when hemoglobin in an object's blood vessels binds to or separates from oxygen, and therefore, oxygen saturation can be measured by detecting light in the near-infrared band (or, for example, red light). In summary, an optical sensor including a first light receiving device PD1 with a first up-conversion device UCD1 disposed thereon can sense biometric information or touch information (including the user's oxygen saturation, pulse, and blood pressure).

[0056] Figure 3 This is a circuit diagram of a pixel circuit PC electrically connected to the light-emitting device ED of the display device 1 and a sensor circuit PC' electrically connected to the light-receiving device PD of the display device 1, according to an embodiment of the present invention.

[0057] refer to Figure 3 Pixel PX (see Figure 1The light sensor may include a light-emitting device ED and a pixel circuit PC that controls the amount of light emitted from the light-emitting device ED, and the optical sensor may include a light-receiving device PD and a sensor circuit PC' that controls the amount of light received by the light-receiving device PD.

[0058] Each pixel circuit PC can be connected to the scan start line GIL, scan control line GCL, first scan write line GWL1, second scan write line GWL2, emit line EML, and data line DL. Furthermore, each pixel circuit PC can be connected to a first drive voltage line VDDL to which a first drive voltage ELVDD is applied, a second drive voltage line VSSL to which a second drive voltage ELVSS is applied, a first initialization voltage line to which a first initialization voltage Vint1 is applied, and a second initialization voltage line to which a second initialization voltage Vint2 is applied.

[0059] Each sensor circuit PC' can be connected to the first scan write line GWL1, the reset line RSTL, and the fingerprint detection line FRL. Furthermore, each sensor circuit PC' can be connected to the second drive voltage line VSSL to which the second drive voltage ELVSS is applied, the reset voltage line to which the reset voltage Vrst is applied, and the first initialization voltage line to which the first initialization voltage Vint1 is applied.

[0060] Each pixel circuit PC may include multiple transistors and at least one capacitor, and may be connected to a light-emitting device ED. The multiple transistors may include first transistors to seventh transistors T1, T2, T3, T4, T5, T6, and T7. Among the multiple transistors, the first transistor T1 may be a driving transistor, and the second transistors T2 to the seventh transistor T7 may be transistors that act as switching devices that are turned on or off according to a scan signal applied to the respective gate electrode of the second transistor T2 to the seventh transistor T7.

[0061] The first transistor T1 may include a gate electrode, a first electrode, and a second electrode. The gate electrode of the first transistor T1 may be connected to the first electrode of the third transistor T3 and an electrode of the storage capacitor Cst. The first electrode of the first transistor T1 may be connected to the second electrode of the second transistor T2 and the second electrode of the fifth transistor T5, and the second electrode of the first transistor T1 may be connected to the second electrode of the third transistor T3 and the first electrode of the sixth transistor T6.

[0062] A light-emitting device (ED) can emit light according to a driving current. The amount of light emitted from the ED can be proportional to the driving current. The ED can be an organic light-emitting diode (OLED) comprising a pixel electrode, a counter electrode, and an organic emitting layer disposed between the pixel electrode and the counter electrode. Alternatively, the ED can be an inorganic light-emitting diode comprising an inorganic emitting layer disposed between the pixel electrode and the counter electrode, or a quantum dot light-emitting diode comprising a quantum dot emitting layer disposed between the pixel electrode and the counter electrode. Furthermore, the ED can be a miniature light-emitting diode. The pixel electrode of the ED can be connected to the second electrode of the sixth transistor T6 and the second electrode of the seventh transistor T7, and the counter electrode of the ED can be connected to the second driving voltage line VSSL.

[0063] The second transistor T2 can be turned on by the scan signal of the first scan write line GWL1 to connect the first electrode of the first transistor T1 to the data line DL. The gate electrode of the second transistor T2 can be connected to the first scan write line GWL1. The first electrode of the second transistor T2 can be connected to the data line DL, and the second electrode of the second transistor T2 can be connected to the first electrode of the first transistor T1.

[0064] The third transistor T3 can be turned on by the scan signal of the scan control line GCL to connect the gate electrode and the second electrode of the first transistor T1 to each other. For example, when the third transistor T3 is turned on, the gate electrode and the second electrode of the first transistor T1 can be connected to each other, and therefore, the first transistor T1 can be driven as a diode. The gate electrode of the third transistor T3 can be connected to the scan control line GCL. The first electrode of the third transistor T3 can be connected to the gate electrode of the first transistor T1, and the second electrode of the third transistor T3 can be connected to the second electrode of the first transistor T1.

[0065] The fourth transistor T4 can be turned on by the scan signal of the scan start line GIL to connect the gate electrode of the first transistor T1 to the second initialization voltage line. In this case, the gate electrode of the first transistor T1 can discharge to the second initialization voltage Vint2 of the second initialization voltage line. The gate electrode of the fourth transistor T4 can be connected to the scan start line GIL. The first electrode of the fourth transistor T4 can be connected to the second initialization voltage line, and the second electrode of the fourth transistor T4 can be connected to the gate electrode of the first transistor T1.

[0066] The fifth transistor T5 can be turned on by the emitter signal of the emitter line EML to connect the first electrode of the first transistor T1 to the first drive voltage line VDDL. The gate electrode of the fifth transistor T5 can be connected to the emitter line EML. The first electrode of the fifth transistor T5 can be connected to the first drive voltage line VDDL, and the second electrode of the fifth transistor T5 can be connected to the first electrode of the first transistor T1.

[0067] The sixth transistor T6 can be turned on by the emission signal of the emission line EML to connect the second electrode of the first transistor T1 to the pixel electrode of the light-emitting device ED. The gate electrode of the sixth transistor T6 can be connected to the emission line EML. The first electrode of the sixth transistor T6 can be connected to the second electrode of the first transistor T1, and the second electrode of the sixth transistor T6 can be connected to the pixel electrode of the light-emitting device ED. When both the fifth transistor T5 and the sixth transistor T6 are turned on, driving current can be supplied to the light-emitting device ED.

[0068] The seventh transistor T7 can be turned on by the scan signal of the second scan write line GWL2 to connect the first initialization voltage line to the pixel electrode of the light-emitting device ED. In this case, the pixel electrode of the light-emitting device ED can discharge to the first initialization voltage Vint1. The gate electrode of the seventh transistor T7 can be connected to the second scan write line GWL2. The first electrode of the seventh transistor T7 can be connected to the first initialization voltage line, and the second electrode of the seventh transistor T7 can be connected to the pixel electrode of the light-emitting device ED.

[0069] A storage capacitor Cst can be formed between the gate electrode of the first transistor T1 and the first drive voltage line VDDL. One electrode of the storage capacitor Cst can be connected to the gate electrode of the first transistor T1, and the other electrode of the storage capacitor Cst can be connected to the first drive voltage line VDDL. As a result, the storage capacitor Cst can maintain the potential difference between the gate electrode of the first transistor T1 and the first drive voltage line VDDL.

[0070] Boost capacitor C BOOST It can be formed between the gate electrode of the second transistor T2 and the gate electrode of the first transistor T1. Boost capacitor C BOOST One electrode can be connected to the first scan write line GWL1, which is connected to the gate electrode of the second transistor T2, and the boost capacitor C BOOST The other electrode can be connected to the gate electrode of the first transistor T1 and one electrode of the storage capacitor Cst. Boost capacitor C BOOST It can be a boost capacitor, and when the signal on the first scan write line GWL1 is the voltage that turns off the second transistor T2, the boost capacitor C... BOOSTYou can increase the voltage at the node to reduce the voltage that displays black (black voltage).

[0071] Each sensor circuit PC' may include multiple transistors and may be connected to an optical receiver PD. The multiple transistors may include eighth to tenth transistors T8, T9, and T10. Among the multiple transistors, the eighth transistor T8 may be a driving transistor, and the ninth transistor T9 and the tenth transistor T10 may be transistors that act as switching devices, being turned on or off according to a scan signal applied to the respective gate electrode of the transistor.

[0072] When multiple light-emitting devices (EDs) and multiple light-receiving devices (PDs) are arranged in a display device 1 (see...), Figure 1 In this context, the voltage or signal lines used to drive the light-emitting device ED can be shared when driving the light-receiving device PD. For example, by reducing the voltage or signal lines used to drive the display device 1 (see [reference]... Figure 1 The additional arrangement of voltage lines or signal lines of multiple optical receiver devices (PDs) in the display device 1 (see [reference]) ensures that the display device 1 (see [reference]) can be securely connected to the display device 1) and ensure that the display device 1 is securely connected to the display device 1) and that the display device PD is securely connected to the display device PD. Figure 1 The resolution of ) and can reduce the PA of the peripheral area (see Figure 1 For example, with pixel PX (see...) Figure 1 The signal line connected to the gate electrode of the second transistor T2 of the optical sensor can be shared with the signal line connected to the gate electrode of the tenth transistor T10 of the optical sensor. For example, the gate electrodes of the second transistor T2 and the tenth transistor T10 can be connected to the first scan write line GWL1. As another example, the second drive voltage line VSSL can be a common voltage line connected to the counter electrode of the light-emitting device ED and the counter electrode of the light-receiving device PD. As another example, the first initialization voltage line for applying the first initialization voltage Vint1 can be a common voltage line connected to the second electrode of the eighth transistor T8 and the second electrode of the seventh transistor T7 of the optical sensor.

[0073] Each photodetector (PD) can be a photodiode comprising a sensing electrode, a counter electrode, and a photoelectric conversion layer disposed between the sensing electrode and the counter electrode. Each photodetector (PD) can convert externally incident light into an electrical signal. The photodetector (PD) can be a photodiode or phototransistor comprising pn-type or pin-type inorganic materials. Furthermore, the photodetector (PD) can be an organic photodiode comprising an electron donor material that generates donor ions and an electron acceptor material that generates acceptor ions.

[0074] When the photodetector PD is exposed to external light, photocharge is generated, and this photocharge can be accumulated in the sensing electrode of the photodetector PD. In this case, the voltage of the node electrically connected to the sensing electrode can increase. When the photodetector PD and the fingerprint detection line FRL are connected to each other according to the conduction of the eighth transistor T8 and the tenth transistor T10, current can flow in the fingerprint detection line FRL in proportion to the voltage of the node where the charge is accumulated.

[0075] The eighth transistor T8 can be turned on by applying a voltage to its gate electrode to connect the first initialization voltage line to the first electrode of the tenth transistor T10. In this case, the second electrode of the tenth transistor T10 can discharge to the first initialization voltage Vint1. The gate electrode of the eighth transistor T8 can be connected to the node between the ninth transistor T9 and the optical receiver PD. The first electrode of the eighth transistor T8 can be connected to the first initialization voltage line, and the second electrode of the eighth transistor T8 can be connected to the first electrode of the tenth transistor T10. The eighth transistor T8 can be a source follower amplifier that generates a source-drain current proportional to the amount of charge input to the gate electrode of the eighth transistor T8 at the node. The first electrode of the eighth transistor T8 can be connected to either the first drive voltage line VDDL or the second initialization voltage line.

[0076] The tenth transistor T10 can be turned on by the scan signal of the first scan write line GWL1 to connect the second electrode of the eighth transistor T8 to the fingerprint detection line FRL. The fingerprint detection line FRL can be configured to transmit a fingerprint detection signal to the readout circuit. The gate electrode of the tenth transistor T10 can be connected to the first scan write line GWL1. The first electrode of the tenth transistor T10 can be connected to the second electrode of the eighth transistor T8, and the second electrode of the tenth transistor T10 can be connected to the fingerprint detection line FRL.

[0077] The ninth transistor T9 can be turned on by the reset signal of the reset line RSTL to reset the node connected to the gate electrode of the eighth transistor T8 to the reset voltage Vrst. The gate electrode of the ninth transistor T9 can be connected to the reset line RSTL. The first electrode of the ninth transistor T9 can be connected to the reset voltage line, and the second electrode of the ninth transistor T9 can be connected to the node connecting the optical receiver PD and the eighth transistor T8 to each other. When the reset driver that outputs the reset signal to the reset line RSTL is omitted, the ninth transistor T9 can be turned on by the scan signal.

[0078] When the first electrode of each of the first to tenth transistors T1, T2, T3, T4, T5, T6, T7, T8, T9, and T10 is a source electrode, the second electrode of each of the first to tenth transistors T1, T2, T3, T4, T5, T6, T7, T8, T9, and T10 can be a drain electrode. Furthermore, when the first electrode of each of the first to tenth transistors T1, T2, T3, T4, T5, T6, T7, T8, T9, and T10 is a drain electrode, the second electrode of each of the first to tenth transistors T1, T2, T3, T4, T5, T6, T7, T8, T9, and T10 can be a source electrode.

[0079] The active layer of each of the first to tenth transistors T1, T2, T3, T4, T5, T6, T7, T8, T9, and T10 may comprise any of polycrystalline silicon, amorphous silicon, and oxide semiconductor. For example, the first transistor T1, the second transistor T2, the fifth to eighth transistors T5, T6, T7, and T8, and the tenth transistor T10 may be P-type transistors. In this case, the active layer of each of the first transistor T1, the second transistor T2, the fifth to eighth transistors T5, T6, T7, and T8, and the tenth transistor T10 may comprise polycrystalline silicon. Furthermore, each of the third transistor T3, the fourth transistor T4, and the ninth transistor T9 may be an N-type transistor comprising an active layer of oxide semiconductor.

[0080] However, embodiments of the present invention are not limited thereto, and each of the first to tenth transistors T1, T2, T3, T4, T5, T6, T7, T8, T9, and T10 may be a P-type transistor. As an example, the eighth to tenth transistors T8, T9, and T10 may be formed as P-type transistors.

[0081] Figure 4 This is a schematic plan view of a portion of the display device 1 according to an embodiment of the present invention. In detail, Figure 4 yes Figure 1 A schematic enlarged plan view of area A. Figure 4 For convenience, a plan view covering the entire embankment 215 is shown in the figure.

[0082] refer to Figure 4The display device 1 may include multiple light-emitting devices and multiple light-receiving devices. The multiple light-emitting devices may include a first light-emitting device ED1, a second light-emitting device ED2, and a third light-emitting device ED3, and the multiple light-receiving devices may include a first light-receiving device PD1. The first light-emitting device ED1, the second light-emitting device ED2, and the third light-emitting device ED3 may emit light of different colors. For example, the first light-emitting device ED1 may emit green light. The second light-emitting device ED2 may emit red light, and the third light-emitting device ED3 may emit blue light. The red light may be light in the wavelength band of about 580 nm to about 780 nm. The blue light may be light in the wavelength band of about 380 nm to about 495 nm, and the green light may be light in the wavelength band of about 495 nm to about 580 nm. The first light-receiving device PD1 may detect light emitted from the first light-emitting device ED1, the second light-emitting device ED2, and / or the third light-emitting device ED3 and reflected by an object. Furthermore, the first light-receiving device PD1 may sense the object.

[0083] Each light-emitting device may include a pixel electrode, a counter electrode, and an intermediate layer disposed therebetween, and each light-receiving device may include a sensing electrode, a counter electrode, and an intermediate layer disposed therebetween. Accordingly, the first light-emitting device ED1 may include a first pixel electrode 1210. The second light-emitting device ED2 may include a second pixel electrode 2210, and the third light-emitting device ED3 may include a third pixel electrode 3210. The first light-receiving device PD1 may include a first sensing electrode 4210. The first pixel electrode 1210, the second pixel electrode 2210, the third pixel electrode 3210, and the first sensing electrode 4210 may be on the substrate 100 (see [reference]). Figure 5 The components are arranged separately from each other. As used herein, the expression "in a plan view" refers to a plan view taken in a direction perpendicular to the substrate 100. That is, the expression "A and B are separated from each other in a plan view" means "when viewed in a direction perpendicular to the substrate 100, A and B are separated from each other".

[0084] The dam layer 215 can be disposed on the first pixel electrode 1210, the second pixel electrode 2210, the third pixel electrode 3210, and the first sensing electrode 4210, and can cover the edges of each of the first pixel electrode 1210, the second pixel electrode 2210, the third pixel electrode 3210, and the first sensing electrode 4210. For example, the dam layer 215 can have a first opening OP1 that exposes the central portion of the first pixel electrode 1210, a second opening OP2 that exposes the central portion of the second pixel electrode 2210, a third opening OP3 that exposes the central portion of the third pixel electrode 3210, and a fourth opening OP4 that exposes the central portion of the first sensing electrode 4210.

[0085] Despite Figure 4 Although not shown in the diagram, the emitting layers for emitting light can be arranged in the first opening OP1, the second opening OP2, and the third opening OP3 of the dike layer 215, respectively, and the active layers for detecting light can each be arranged in the fourth opening OP4 of the dike layer 215. Counter electrodes can be disposed on the emitting layers and the active layers. As described above, the stacked structure of the pixel electrode, the emitting layer, and the counter electrode can constitute a light-emitting device. Furthermore, as described above, the stacked structure of the sensing electrode, the active layer, and the counter electrode can constitute a light-receiving device. One opening of the dike layer 215 can correspond to a light-emitting device and can define an emitting region. Furthermore, one opening of the dike layer 215 can correspond to a light-receiving device and can define a sensing region.

[0086] For example, an emitting layer for emitting green light can be arranged in a first opening OP1, and therefore, the first opening OP1 can provide a first emitting region EA1. Similarly, an emitting layer for emitting red light can be arranged in a second opening OP2, and therefore, the second opening OP2 can provide a second emitting region EA2. An emitting layer for emitting blue light can be arranged in a third opening OP3, and therefore, the third opening OP3 can provide a third emitting region EA3. An active layer for detecting light can be arranged in a fourth opening OP4, and therefore, the fourth opening OP4 can provide a first sensing region SA1.

[0087] Accordingly, the area of ​​the first opening OP1 can be the same as the area of ​​the first transmitting region EA1. The area of ​​the second opening OP2 can be the same as the area of ​​the second transmitting region EA2, and the area of ​​the third opening OP3 can be the same as the area of ​​the third transmitting region EA3. The area of ​​the fourth opening OP4 can be the same as the area of ​​the first sensing region SA1.

[0088] When perpendicular to substrate 100 (see...) Figure 5 When viewed in the direction perpendicular to the substrate 100 (z-axis direction), each of the first opening OP1, the second opening OP2, the third opening OP3, and the fourth opening OP4 can have a polygonal shape. In other words, when viewed in the direction perpendicular to the substrate 100 (z-axis direction), each of the first emission region EA1, the second emission region EA2, the third emission region EA3, and the first sensing region SA1 can have a polygonal shape. Figure 4The illustration shows that, when viewed in a direction perpendicular to the substrate 100 (z-axis direction), each of the first emitting region EA1, the second emitting region EA2, the third emitting region EA3, and the first sensing region SA1 has a quadrilateral shape (e.g., a quadrilateral shape with rounded corners). However, embodiments of the present invention are not limited thereto. For example, when viewed in a direction perpendicular to the substrate 100 (z-axis direction), each of the first emitting region EA1, the second emitting region EA2, the third emitting region EA3, and the first sensing region SA1 may have a circular shape or an elliptical shape.

[0089] Figure 5 This is a schematic cross-sectional view of a portion of the display device 1 according to an embodiment of the present invention. In detail, Figure 5 yes Figure 4 A schematic cross-sectional view of the display device 1 taken along line I-I'. Figure 6 This is a schematic conceptual diagram of a portion of a display device 1 according to an embodiment of the present invention. In detail, Figure 6 This is a schematic cross-sectional view of the stacked structure of the first up-conversion device UCD1 of the display device 1 according to an embodiment of the present invention.

[0090] like Figure 5 As shown, the display device 1 according to this embodiment may include a substrate 100. The substrate 100 may include various materials having flexible or bendable properties. For example, the substrate 100 may include glass, metal, or polymer resin. Furthermore, the substrate 100 may include polymer resins such as polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, or cellulose acetate propionate. However, various modifications can be made; for example, the substrate 100 may have a multilayer structure comprising two layers and a barrier layer disposed between the two layers and comprising an inorganic material such as silicon oxide, silicon nitride, or silicon oxynitride. Each of the two layers may include, for example, a polymer resin.

[0091] The first to third light-emitting devices ED1, ED2 and ED3, the first light-receiving device PD1, the pixel circuit PC and the sensor circuit PC' can be disposed on the substrate 100. The pixel circuit PC can be electrically connected to each of the first to third light-emitting devices ED1, ED2 and ED3, and the sensor circuit PC' can be electrically connected to the first light-receiving device PD1.

[0092] Because the first light-emitting device ED1, the second light-emitting device ED2, and the third light-emitting device ED3 are electrically connected to the pixel circuit PC, light emission can be controlled. Furthermore, because the first light-receiving device PD1 is electrically connected to the sensor circuit PC', light detection can be controlled. The pixel circuit PC may include a storage capacitor Cst and multiple thin-film transistors (TFTs), and can be connected to a reference circuit. Figure 3 The described pixel circuit PC has essentially the same structure. Figure 5 For ease of explanation, a thin-film transistor (TFT) is shown, and the TFT can correspond to the first transistor T1 described above (see [reference]). Figure 3 Similarly, the sensor circuit PC' may include multiple thin-film transistors (TFTs)' and can be connected to a reference. Figure 3 The described sensor circuit PC' has essentially the same structure. Figure 5 For ease of explanation, a thin-film transistor TFT' is shown, and the thin-film transistor TFT' can correspond to the eighth transistor T8 described above (see [link to documentation]). Figure 3 For ease of description, the following text will primarily focus on a pixel circuit PC.

[0093] A buffer layer 201, comprising an inorganic material such as silicon oxide, silicon nitride, and / or silicon oxynitride, may be disposed between the thin-film transistor (TFT) and the substrate 100. The buffer layer 201 may increase the smoothness of the upper surface of the substrate 100, or may prevent or reduce the penetration of impurities from the substrate 100 into the semiconductor layer Act of the thin-film transistor (TFT).

[0094] like Figure 5 As shown, a thin-film transistor (TFT) may include a semiconductor layer Act comprising, for example, amorphous silicon, polycrystalline silicon, organic semiconductor materials, or oxide semiconductor materials. Furthermore, the TFT may include a gate electrode GE, a source electrode SE, and / or a drain electrode DE. The gate electrode GE may include various conductive materials and may have various layered structures. For example, the gate electrode GE may include a Mo layer and an Al layer. Additionally, the gate electrode GE may include, for example, TiN. x The source electrode SE and drain electrode DE may also comprise various conductive materials and may also have various layered structures. For example, each of the source electrode SE and drain electrode DE may comprise a Ti layer, an Al layer, and / or a Cu layer.

[0095] To ensure insulation between the semiconductor layer Act and the gate electrode GE, a gate insulating layer 203, comprising inorganic materials such as silicon oxide, silicon nitride, and / or silicon oxynitride, may be disposed between the semiconductor layer Act and the gate electrode GE. Figure 5The diagram shows that the gate insulating layer 203 has a shape corresponding to the entire surface of the substrate 100 and has a structure in which contact holes are formed in predetermined portions, but embodiments of the present invention are not limited thereto. For example, the gate insulating layer 203 may be patterned to have the same shape as the gate electrode GE.

[0096] Furthermore, a first interlayer insulating layer 205 comprising an inorganic material such as silicon oxide, silicon nitride, and / or silicon oxynitride can be disposed on the gate electrode GE. The first interlayer insulating layer 205 can have a single-layer or multi-layer structure comprising the aforementioned materials. The first interlayer insulating layer 205 can be formed by chemical vapor deposition (CVD) or atomic layer deposition (ALD).

[0097] The storage capacitor Cst may include a first electrode CE1 and a second electrode CE2 that overlap each other and are disposed between them by a first interlayer insulating layer 205. The storage capacitor Cst may overlap with a thin-film transistor (TFT). In this respect, Figure 5 The diagram shows the gate electrode GE of the thin-film transistor TFT as the first electrode CE1 of the storage capacitor Cst, but embodiments of the present invention are not limited thereto. For example, the storage capacitor Cst may not overlap with the thin-film transistor TFT. The second electrode CE2 of the storage capacitor Cst may comprise, for example, a conductive material comprising Mo, Al, Cu, and Ti, and may have a single-layer or multi-layer structure comprising the above materials.

[0098] A second interlayer insulating layer 207, comprising inorganic materials such as silicon oxide, silicon nitride, and / or silicon oxynitride, may be disposed on the second electrode CE2 of the storage capacitor Cst. The second interlayer insulating layer 207 may have a single-layer or multi-layer structure comprising the aforementioned materials.

[0099] The source electrode SE and drain electrode DE can be disposed on the second interlayer insulating layer 207. Each of the source electrode SE and drain electrode DE can include a material with excellent conductivity. Each of the source electrode SE and drain electrode DE can include a conductive material comprising, for example, Mo, Al, Cu, and Ti, and can have a single-layer or multi-layer structure comprising the above materials. For example, each of the source electrode SE and drain electrode DE can have a Ti / Al / Ti multi-layer structure. However, embodiments of the present invention are not limited thereto. For example, a thin-film transistor (TFT) may include only one of the source electrode SE and drain electrode DE, or may not include both the source electrode SE and drain electrode DE.

[0100] Planarization layer 208 can be arranged to cover thin-film transistor (TFT) and storage capacitor (Cst). Planarization layer 208 may include organic insulating materials. For example, planarization layer 208 may include benzocyclobutene (BCB), polyimide, hexamethyldisiloxane (HMDSO), polymethyl methacrylate (PMMA), polystyrene, polymer derivatives having phenolic groups, acrylic polymers, imide polymers, aryl ether polymers, amide polymers, fluorinated polymers, p-xylene polymers, vinyl alcohol polymers, or mixtures thereof. A third interlayer insulating layer may be disposed below planarization layer 208. The third interlayer insulating layer may include inorganic insulating materials such as silicon oxide, silicon nitride, or silicon oxynitride.

[0101] The first light-emitting device ED1, the second light-emitting device ED2, the third light-emitting device ED3, and the first light-receiving device PD1 can be arranged separately on the planarization layer 208. The first light-emitting device ED1, the second light-emitting device ED2, and the third light-emitting device ED3 can emit light of different colors. For example, the first light-emitting device ED1 can emit green light, the second light-emitting device ED2 can emit red light, and the third light-emitting device ED3 can emit blue light. The first light-receiving device PD1 can detect the light emitted from the first light-emitting device to the third light-emitting devices ED1, ED2, and ED3 and reflected by the object. Furthermore, an auxiliary light-emitting device ED4 (see...) Figure 2A This can be set on the planarization layer 208. From the auxiliary light-emitting device ED4 (see...) Figure 2A The light emitted and reflected by the object can be converted by the first upconversion device UCD1 and then incident on the first optical receiver device PD1.

[0102] The first light-emitting device ED1 may include a first pixel electrode 1210, a first intermediate layer 1220, and a counter electrode 230. The second light-emitting device ED2 may include a second pixel electrode 2210, a second intermediate layer 2220, and a counter electrode 230. The third light-emitting device ED3 may include a third pixel electrode 3210, a third intermediate layer 3220, and a counter electrode 230. The first light-receiving device PD1 may include a first sensing electrode 4210, a fourth intermediate layer 4220, and a counter electrode 230. For example, the first pixel electrode 1210, the second pixel electrode 2210, the third pixel electrode 3210, and the first sensing electrode 4210 included in the first light-emitting device ED1, the second light-emitting device ED2, the third light-emitting device ED3, and the first light-receiving device PD1 may be patterned and provided for each pixel. The counter electrode 230 of the first light-emitting device ED1, the second light-emitting device ED2, the third light-emitting device ED3, and the first light-receiving device PD1 can be provided as a single entity spanning the first light-emitting device ED1, the second light-emitting device ED2, the third light-emitting device ED3, and the first light-receiving device PD1. Each of the first intermediate layer 1220, the second intermediate layer 2220, the third intermediate layer 3220, and the fourth intermediate layer 4220 can be respectively arranged between the counter electrode 230 and each of the first pixel electrode 1210, the second pixel electrode 2210, the third pixel electrode 3210, and the first sensing electrode 4210.

[0103] The first pixel electrode 1210, the second pixel electrode 2210, the third pixel electrode 3210, and the first sensing electrode 4210 can be arranged separately from each other on the substrate 100. The first pixel electrode 1210, the second pixel electrode 2210, the third pixel electrode 3210, and the first sensing electrode 4210 can be reflective electrodes. For example, each of the first pixel electrode 1210, the second pixel electrode 2210, the third pixel electrode 3210, and the first sensing electrode 4210 can include a light-transmitting conductive layer comprising a light-transmitting conductive oxide such as ITO, In2O3, or IZO, and a reflective layer comprising a metal such as Al or Ag. For example, each of the first pixel electrode 1210, the second pixel electrode 2210, the third pixel electrode 3210, and the first sensing electrode 4210 can have a three-layer structure of ITO / Ag / ITO.

[0104] like Figure 5As shown, each of the first pixel electrode 1210, the second pixel electrode 2210, and the third pixel electrode 3210 can be electrically connected to the thin-film transistor (TFT) through contact with either the source electrode SE or the drain electrode DE. For example, each of the first pixel electrode 1210, the second pixel electrode 2210, and the third pixel electrode 3210 can be contacted with either the source electrode SE or the drain electrode DE through a contact hole formed in the planarization layer 208. Similarly, the first sensing electrode 4210 can be electrically connected to the thin-film transistor TFT' through a contact hole formed in the planarization layer 208.

[0105] A dam layer 215 can be disposed on the planarization layer 208. The dam layer 215 can have openings corresponding to each of the first to third light-emitting devices ED1, ED2, and ED3 and the first light-receiving device PD1, i.e., openings that expose at least the central portion of the pixel electrode (or sensing electrode), thereby providing an emission region and a sensing region. For example, the dam layer 215 can have multiple openings, such as first to fourth openings OP1, OP2, OP3, and OP4, for exposing the corresponding central portions of the first pixel electrode 1210, the second pixel electrode 2210, the third pixel electrode 3210, and the first sensing electrode 4210. Furthermore, the dam layer 215 can increase the distance between the pixel electrode 210 and the counter electrode 230 or the first sensing electrode 4210 and the counter electrode 230. As a result, arcing or the like can be prevented at the edges of the pixel electrode 210 or the first sensing electrode 4210. The dam layer 215 can comprise organic materials such as polyimide or HMDSO.

[0106] Counter electrode 230 may be disposed on the first pixel electrode 1210. Counter electrode 230 may be provided as a single entity spanning the first light-emitting device ED1, the second light-emitting device ED2, the third light-emitting device ED3, and the first light-receiving device PD1. Accordingly, counter electrode 230 may also be disposed on the second pixel electrode 2210, the third pixel electrode 3210, and the first sensing electrode 4210. Counter electrode 230 may be a semi-transparent electrode or a transmissive electrode. For example, counter electrode 230 may be a transmissive electrode including a transmissive conductive layer comprising ITO, In2O3, or IZO, or it may be a semi-transparent electrode including a semi-transparent layer comprising a metal such as Al or Ag. For example, counter electrode 230 may be a semi-transparent layer comprising at least one of Mg and Ag.

[0107] An intermediate layer can be disposed between the pixel electrode 210 and the counter electrode 230, and between the first sensing electrode 4210 and the counter electrode 230. The intermediate layer may include a first intermediate layer 1220, a second intermediate layer 2220, a third intermediate layer 3220, and a fourth intermediate layer 4220. The first intermediate layer 1220 can be disposed between the first pixel electrode 1210 and the counter electrode 230. The second intermediate layer 2220 can be disposed between the second pixel electrode 2210 and the counter electrode 230, and the third intermediate layer 3220 can be disposed between the third pixel electrode 3210 and the counter electrode 230. The fourth intermediate layer 4220 can be disposed between the first sensing electrode 4210 and the counter electrode 230.

[0108] The first intermediate layer 1220 may include a first common layer 221, a second common layer 222, a first emission layer 1223, a buffer layer, a third common layer 225, and a fourth common layer 226. The second intermediate layer 2220 may include the first common layer 221, the second common layer 222, the second emission layer 2223, a buffer layer, a third common layer 225, and a fourth common layer 226. The third intermediate layer 3220 may include the first common layer 221, the second common layer 222, the third emission layer 3223, a buffer layer, a third common layer 225, and a fourth common layer 226. The fourth intermediate layer 4220 may include the first common layer 221, the second common layer 222, a first active layer 4223, a buffer layer, a third common layer 225, and a fourth common layer 226.

[0109] In this configuration, each of the first common layer 221, the second common layer 222, the buffer layer, the third common layer 225, and the fourth common layer 226 can be provided as a single entity spanning from the first light-emitting device to the third light-emitting devices ED1, ED2, and ED3, and the first light-receiving device PD1. For example, the first common layer 221, the second common layer 222, the buffer layer (not shown), the third common layer 225, and the fourth common layer 226 can be formed covering the entire surface of the substrate 100. The emitting layer 223 and the first active layer 4223 can be individually patterned and provided for each light-emitting device and each light-receiving device.

[0110] As described above, the first light-emitting device ED1 emits green light. The second light-emitting device ED2 emits red light, and the third light-emitting device ED3 emits blue light. To achieve this light emission, the first emitting layer 1223 emits green light. The second emitting layer 2223 emits red light, and the third emitting layer 3223 emits blue light. The first light-receiving device PD1 can detect the light emitted from the first light-emitting device to the third light-emitting devices ED1, ED2, and ED3 and reflected by an object. To achieve this light detection, the first active layer 4223 can absorb light in the visible light band. For example, the first active layer 4223 can absorb green light.

[0111] The emitting layer 223 may include an organic material containing a fluorescent or phosphorescent material that emits red, green, blue, or white light. The emitting layer 223 may be an organic emitting layer comprising low molecular weight organic materials or polymeric organic materials. For example, the emitting layer 223 may be an organic emitting layer and may include copper phthalocyanine, aluminum tri-8-hydroxyquinoline, polyphenylene acetylene (PPV) materials, or polyfluorene materials.

[0112] In embodiments of this invention, the emitting layer 223 may include a host material and a dopant material. The dopant material may be a material that emits light of a specific color and may include a light-emitting material. The light-emitting material may include at least one of, for example, phosphorescent dopant, fluorescent dopant, and quantum dots. The host material may be the primary material of the emitting layer 223 and may be a material that contributes to the luminescence of the dopant material.

[0113] The first active layer 4223 can receive light from the outside to generate excitons, and then the generated excitons can be separated into holes and electrons. When a (+) potential is applied to the first sensing electrode 4210 and a (-) potential is applied to the counter electrode 230, the holes separated in the first active layer 4223 can move toward the counter electrode 230, and the electrons separated in the first active layer 4223 can move toward the first sensing electrode 4210. Accordingly, a photocurrent can be formed in the direction from the first sensing electrode 4210 to the counter electrode 230. When a bias voltage is applied between the first sensing electrode 4210 and the counter electrode 230, a dark current can flow through the first photoreceiving device PD1. The first photoreceiving device PD1 can detect the amount of light based on the ratio of photocurrent to dark current.

[0114] The first active layer 4223 may include p-type semiconductor compounds and n-type semiconductor compounds. For example, the first active layer 4223 may be a mixed layer including p-type semiconductor compounds and n-type semiconductor compounds. Furthermore, the first active layer 4223 may have a structure in which layers including p-type semiconductor compounds and layers including n-type semiconductor compounds are stacked. The layers including p-type semiconductor compounds and the layers including n-type semiconductor compounds can form a PN junction. Due to photoinduced charge separation occurring at the interfaces of these layers, excitons can be effectively separated into holes and electrons.

[0115] p-type semiconductor compounds can be compounds that act as electron donors. For example, p-type semiconductor compounds can be organic compounds with electron donor properties. For example, p-type semiconductor compounds can include: triarylamine compounds, benzidine compounds, pyrazoline compounds, styreneamine compounds, hydrazone compounds, triphenylmethane compounds, carbazole compounds, polysilane compounds, thiophene compounds, phthalocyanine compounds, naphthylphthalocyanine compounds, cyanine compounds, melocyanine compounds, oxacyanine compounds, polyamine compounds, indole compounds, pyrrole compounds, pyrazole compounds, polyaromatic compounds, condensed aromatic carbocyclic compounds (naphthalene derivatives, anthracene derivatives, phenanthrene derivatives, tetraphenylene derivatives, pyrene derivatives, perylene derivatives, or fluoranthene derivatives), or metal complexes with nitrogen-containing heterocyclic compounds as ligands, etc., but the embodiments of this utility model are not limited to these.

[0116] N-type semiconductor compounds can be compounds that act as electron acceptors. For example, n-type semiconductor compounds can be organic compounds with electron acceptor properties. Examples of n-type semiconductor compounds include: fullerenes, fullerene derivatives, condensed aromatic carbocyclic compounds (naphthalene derivatives, anthracene derivatives, phenanthrene derivatives, tetraphenylbenzene derivatives, pyrene derivatives, perylene derivatives, or fluoranthene derivatives), and five- to seven-membered heterocyclic compounds containing nitrogen, oxygen, and sulfur atoms (e.g., pyridine, pyrazine, pyrimidine, pyridazine, triazine, quinoline, quinoxaline, quinazoline, phthalazine, borazine, isoquinoline, pteridine, acridine, phenazine, phenanthrene, tetrazolium, pyrazole, imidazole, thiazole, oxazole, indazole, benzimidazole, benzotriazole, benzoxazole, benzothiazole, carbazole, purine, triazolepyridazine, triazolepyrimidine, tetrazaindene, oxadiazole, imidazole pyridine, pyrrolidine, pyrrolopyridine, thiadiazopyridine, dibenzopyridine). Tribenzo[a] Examples of ligands include polyaromatic compounds, fluorinated compounds, cyclopentadiene compounds, silyl compounds, or metal complexes with nitrogen-containing heterocyclic compounds as ligands, but the embodiments of this utility model are not limited thereto.

[0117] Each of the first to third light-emitting devices ED1, ED2, and ED3, and the first light-receiving device PD1, may further include a charge-assisted layer to facilitate the movement of holes and electrons. The charge-assisted layer may include a first common layer 221, a second common layer 222, a buffer layer, a third common layer 225, and a fourth common layer 226. The first common layer 221 and the second common layer 222 may be disposed between the pixel electrode 210 and the emitter layer 223, and between the first sensing electrode 4210 and the first active layer 4223. The buffer layer, the third common layer 225, and the fourth common layer 226 may be disposed between the emitter layer 223 and the counter electrode 230, and between the first active layer 4223 and the counter electrode 230. For example, each of the first to fourth common layers 221, 222, 225, and 226, and the buffer layer, may be provided as a single entity spanning the first to third light-emitting devices ED1, ED2, and ED3, and the first light-receiving device PD1.

[0118] In embodiments of this invention, a hole transport region may be defined between the pixel electrode 210 and the emitter layer 223, and between the first sensing electrode 4210 and the first active layer 4223. Furthermore, an electron transport region may be provided between the emitter layer 223 and the counter electrode 230, and between the first active layer 4223 and the counter electrode 230.

[0119] The hole transport region can facilitate hole movement and can have a single-layer or multi-layer structure. The hole transport region may include at least one of a hole injection layer (HIL), a hole transport layer (HTL), and an electron blocking layer (EBL). In an embodiment of this invention, the first common layer 221 disposed in the hole transport region may be an HIL, and the second common layer 222 disposed in the hole transport region may be an HTL.

[0120] For example, each of the first common layer 221 and the second common layer 222 may include m-MTDATA, TDATA, 2-TNATA, NPB (NPD), β-NPB, TPD, spiroTPD, spiroNPB, methylated NPB, TAPC, HMTPD, 4,4',4-tris(N-carbazolyl)triphenylamine (TCTA), polyaniline / dodecylbenzenesulfonic acid (Pani / DBSA), polyaniline / camphorsulfonic acid (Pani / CSA), poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) (PEDOT / PSS) and / or polyaniline / poly(4-styrenesulfonate) (PANI / PSS).

[0121] The electron transport region can facilitate electron movement and can have a single-layer or multi-layer structure. The electron transport region may include at least one of a buffer layer, an electron injection layer (EIL), an electron transport layer (ETL), and a hole blocking layer (HBL). In an embodiment of this invention, the third common layer 225 disposed in the electron transport region may be an ETL, and the fourth common layer 226 disposed in the electron transport region may be an EIL.

[0122] For example, the buffer layer may comprise an inorganic material such as silicon oxide, silicon nitride, and / or silicon oxynitride, and each of the third common layer 225 and the fourth common layer 226 may comprise at least one of: 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), Alq3, BAlq, 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole (TAZ), and NTAZ.

[0123] The capping layer 240 can be disposed on the first to third light-emitting devices ED1, ED2, and ED3, which have the structures described above, and on the first light-receiving device PD1. For example, the capping layer 240 can be disposed on the counter electrode 230 and can be formed as a single entity covering the entire surface of the substrate 100. The capping layer 240 can prevent impurities such as moisture and oxygen from entering the display device 1, thereby improving the reliability of the display device 1.

[0124] Capping layer 240 may be an organic capping layer comprising organic materials, an inorganic capping layer comprising inorganic materials, or an organic-inorganic composite capping layer comprising both organic and inorganic materials. Capping layer 240 may include, for example, carbocyclic compounds, heterocyclic compounds, amino-containing compounds, porphyrin derivatives, phthalocyanine derivatives, naphthalene phthalocyanine derivatives, alkali metal complexes, alkaline earth metal complexes, or any combination thereof. Carbocyclic compounds, heterocyclic compounds, and amino-containing compounds may optionally be substituted with substituents comprising, for example, O, N, S, Se, Si, F, Cl, Br, I, or any combination thereof.

[0125] In embodiments of this invention, a first up-conversion device UCD1 may be disposed on a first optical receiver PD1. As briefly described above, the first up-conversion device UCD1 can absorb light with low energy, convert the absorbed light into light with high energy, and emit the converted light. For example, the first up-conversion device UCD1 can absorb light with a long wavelength, convert the absorbed light into light with a short wavelength, and emit the converted light.

[0126] For example, the first upconversion device UCD1 can convert light in the near-infrared wavelength band into light in the visible light wavelength band and emit the converted light. The display device 1 can use an auxiliary light-emitting device ED4 (see...). Figure 2A The display device 1 emits light in the near-infrared wavelength band. The light in the near-infrared wavelength band emitted from the display device 1 can be reflected by an object, and subsequently, the reflected light can be incident on a first up-conversion device UCD1 to be converted into light in the visible light wavelength band. When the first light receiving device PD1 absorbs green light, the first up-conversion device UCD1 can convert light in the near-infrared wavelength band into green light. However, embodiments of the present invention are not limited to this, and when the first light receiving device PD1 absorbs red light, the first up-conversion device UCD1 can convert light in the near-infrared wavelength band into red light. In embodiments of the present invention, the first up-conversion device UCD1 can convert red light with a long wavelength in the visible light wavelength band into green light with a relatively short wavelength.

[0127] refer to Figure 5 and Figure 6 The first up-conversion device UCD1 may include a lower auxiliary electrode 510, an auxiliary intermediate layer 520, and an upper auxiliary electrode 530. Since the capping layer 240 is disposed between the first up-conversion device UCD1 and the first optical receiver PD1, the lower auxiliary electrode 510 may be disposed on the capping layer 240.

[0128] Each of the lower auxiliary electrode 510 and the upper auxiliary electrode 530 can be a semi-transparent electrode or a transmissive electrode. For example, when each of the lower auxiliary electrode 510 and the upper auxiliary electrode 530 is a transmissive electrode, each of the lower auxiliary electrode 510 and the upper auxiliary electrode 530 may include a transparent conductive oxide (TCO) layer comprising ITO, IZO, ZnO, or In2O3. For example, when each of the lower auxiliary electrode 510 and the upper auxiliary electrode 530 is a semi-transparent electrode, each of the lower auxiliary electrode 510 and the upper auxiliary electrode 530 may include a metal thin film comprising Li, Ca, LiF, Al, Ag, Mg, and their compounds and having a small work function, or a material having a multilayer structure such as LiF / Ca or LiF / Al.

[0129] In embodiments of this invention, the lower auxiliary electrode 510 may be an electrode with a negative potential, and the upper auxiliary electrode 530 may be an electrode with a positive potential. However, embodiments of this invention are not limited thereto, and in embodiments of this invention, the lower auxiliary electrode 510 may be an electrode with a positive potential, and the upper auxiliary electrode 530 may be an electrode with a negative potential. Each of the lower auxiliary electrode 510 and the upper auxiliary electrode 530 may be additionally connected to an auxiliary line to have a corresponding potential. For example, the display device 1 may include a first auxiliary line connected to the lower auxiliary electrode 510 and a second auxiliary line connected to the upper auxiliary electrode 530. The first and second auxiliary lines can connect the first up-conversion device UCD1 to a peripheral region PA (see...). Figure 1 The pads in the first up-conversion device UCD1. First auxiliary lines and second auxiliary lines can extend by forming contact holes in multiple layers disposed beneath the first up-conversion device UCD1. The first and second auxiliary lines can be configured to transmit electrical signals output from the pads to the lower auxiliary electrode 510 and the upper auxiliary electrode 530 to turn the first up-conversion device UCD1 on and off.

[0130] An auxiliary intermediate layer 520 may be disposed between the lower auxiliary electrode 510 and the upper auxiliary electrode 530. The auxiliary intermediate layer 520 may include an auxiliary emitting layer 523 and an auxiliary active layer 527 disposed on the auxiliary emitting layer 523. The auxiliary active layer 527 may absorb light in the near-infrared wavelength band reflected by the object and re-intruded onto the first up-conversion device UCD1, and the auxiliary emitting layer 523 may emit light in the visible light wavelength band.

[0131] Furthermore, the auxiliary intermediate layer 520 may further include a charge-assisted layer that promotes the movement of holes and electrons. The auxiliary intermediate layer 520 may further include a first charge-assisted layer 521 disposed between the lower auxiliary electrode 510 and the auxiliary emitter layer 523. The auxiliary intermediate layer 520 may additionally include a second charge-assisted layer 525 disposed between the auxiliary emitter layer 523 and the auxiliary active layer 527, and a third charge-assisted layer 529 disposed between the auxiliary active layer 527 and the upper auxiliary electrode 530.

[0132] First, when light in the near-infrared wavelength band is input to the first up-conversion device UCD1, the auxiliary active layer 527 can generate excitons, and subsequently, the generated excitons are separated into holes and electrons. In an embodiment of the present invention, when a (-) potential is applied to the lower auxiliary electrode 510 and a (+) potential is applied to the upper auxiliary electrode 530, the holes separated in the auxiliary active layer 527 can move toward the lower auxiliary electrode 510, and the electrons separated in the auxiliary active layer 527 can move toward the upper auxiliary electrode 530. For example, the holes separated in the auxiliary active layer 527 can move toward the auxiliary emitting layer 523. In this case, because electrons can move from the lower auxiliary electrode 510 to the auxiliary emitting layer 523, holes and electrons can recombine in the auxiliary emitting layer 523 to emit light in the visible wavelength band.

[0133] When the lower auxiliary electrode 510 and the upper auxiliary electrode 530 have the potentials described above, the electron transport region can be defined between the lower auxiliary electrode 510 and the auxiliary emitter layer 523. For example, the first charge auxiliary layer 521 may include at least one of EIL, ETL, and HBL. A hole transport region may be provided between the auxiliary emitter layer 523 and the auxiliary active layer 527. For example, the second charge auxiliary layer 525 may be HTL. An electron transport region may be provided between the auxiliary active layer 527 and the upper auxiliary electrode 530. For example, the third charge auxiliary layer 529 may include at least one of EIL, ETL, and HBL.

[0134] In embodiments of this invention, when a (+) potential is applied to the lower auxiliary electrode 510 and a (-) potential is applied to the upper auxiliary electrode 530, electrons separated in the auxiliary active layer 527 can move toward the lower auxiliary electrode 510, and holes separated in the auxiliary active layer 527 can move toward the upper auxiliary electrode 530. For example, electrons separated in the auxiliary active layer 527 can move toward the auxiliary emission layer 523. In this case, because holes can move from the lower auxiliary electrode 510 to the auxiliary emission layer 523, holes and electrons can recombine in the auxiliary emission layer 523 to emit light in the visible light wavelength band.

[0135] When the lower auxiliary electrode 510 and the upper auxiliary electrode 530 have the potentials described above, a hole transport region can be provided between the lower auxiliary electrode 510 and the auxiliary emitter layer 523. For example, the first charge auxiliary layer 521 may include at least one of HIL, HTL, and EBL. An electron transport region can be provided between the auxiliary emitter layer 523 and the auxiliary active layer 527. For example, the second charge auxiliary layer 525 may be ETL. A hole transport region can be provided between the auxiliary active layer 527 and the upper auxiliary electrode 530. For example, the third charge auxiliary layer 529 may include at least one of HIL, HTL, and EBL.

[0136] Similar to the emitting layer 223 of the first to third light-emitting devices ED1, ED2, and ED3, the auxiliary emitting layer 523 may comprise an organic material containing a fluorescent or phosphorescent material that emits red, green, blue, or white light. The auxiliary emitting layer 523 may be an organic emitting layer comprising a low molecular weight organic material or a polymeric organic material. For example, the auxiliary emitting layer 523 may be an organic emitting layer and may contain copper phthalocyanine, aluminum tris-8-hydroxyquinoline, PPV-like materials, polyfluorene-like materials, or tris(2-phenylpyridine)iridium (Ir(ppy)3).

[0137] In embodiments of this invention, the auxiliary emitting layer 523 may include a host material and a dopant material. The dopant material may be a material that emits light of a specific color and may include a luminescent material. The luminescent material may include at least one of phosphorescent dopant, fluorescent dopant, and quantum dot. The host material may be the primary material of the auxiliary emitting layer 523 and may also be a material that contributes to the luminescence of the dopant material.

[0138] Similar to the first active layer 4223 of the first optical receiver PD1, the auxiliary active layer 527 may include a p-type semiconductor compound and an n-type semiconductor compound. The p-type semiconductor compound may be an organic compound with electron donor properties, and the n-type semiconductor compound may be an organic compound with electron acceptor properties.

[0139] For example, p-type semiconductor compounds may include: triarylamine compounds, benzidine compounds, pyrazoline compounds, styreneamine compounds, hydrazone compounds, triphenylmethane compounds, carbazole compounds, polysilane compounds, thiophene compounds, phthalocyanine compounds, naphthylphthalocyanine compounds, cyanine compounds, melocyanine compounds, oxacyanine compounds, polyamine compounds, indole compounds, pyrrole compounds, pyrazole compounds, polyaromatic compounds, condensed aromatic carbocyclic compounds (naphthalene derivatives, anthracene derivatives, phenanthrene derivatives, tetraphenylene derivatives, pyrene derivatives, perylene derivatives, or fluoranthene derivatives) or metal complexes having nitrogen-containing heterocyclic compounds as ligands, but the embodiments of this utility model are not limited thereto.

[0140] For example, n-type semiconductor compounds may include: fullerenes, fullerene derivatives, condensed aromatic carbocyclic compounds (naphthalene derivatives, anthracene derivatives, phenanthrene derivatives, tetraphenylbenzene derivatives, pyrene derivatives, perylene derivatives, or fluoranthene derivatives), and five- to seven-membered heterocyclic compounds containing nitrogen, oxygen, and sulfur atoms (e.g., pyridine, pyrazine, pyrimidine, pyridazine, triazine, quinoline, quinoxaline, quinazoline, phthalazine, zoline, isoquinoline, pteridine, acridine, phenazine, phenanthrene, tetrazolium, pyrazole, imidazole, thiazole, oxazole, indazole, benzimidazole, benzotriazole, benzoxazole, benzothiazole, carbazole, purine, triazolepyridazine, triazolepyrimidine, tetrazaindene, oxadiazole, imidazole pyridine, pyrrolidine, pyrrolopyridine, thiadiazopyridine, dibenzopyridine). Tribenzo[a] Examples of the present invention include polyaromatic compounds, fluorinated compounds, cyclopentadiene compounds, silyl compounds, or metal complexes having nitrogen-containing heterocyclic compounds as ligands, but the embodiments of the present invention are not limited thereto.

[0141] Accordingly, because the first up-conversion device UCD1 with the above-described structure is disposed on the first light receiving device PD1, the first light receiving device PD1 can detect both light in the near-infrared wavelength band and light in the visible light wavelength band, and therefore, the sensitivity of the optical sensor including the first light receiving device PD1 can be improved. For example, when green light emitted from the first light emitting device ED1 is reflected by an object and re-intruded onto the first light receiving device PD1, the first light receiving device PD1 can detect the re-intruded light. Furthermore, when green light emitted from the auxiliary light emitting device ED4 (see...) Figure 2A When light emitted in the near-infrared wavelength band is reflected by the object and re-intruded onto the first up-conversion device UCD1, the re-intruded light can be converted into green light by the first up-conversion device UCD1, and the first light receiving device PD1 can detect the converted light. Accordingly, the display device 1 including the first up-conversion device UCD1 can sense fingerprint information not only by using light in the visible light wavelength band, but also by using light in the near-infrared wavelength band to sense biometric information.

[0142] Furthermore, the transmittance of the first up-conversion device UCD1 itself can be determined using the thickness of each layer included in the first up-conversion device UCD1 or the difference in refractive index at the interfaces between these layers. In this case, when the transmittance of the first up-conversion device UCD1 is high, a relatively large amount of light in the visible light band can pass through the first up-conversion device UCD1, and therefore, the sensing sensitivity of the first light receiving device PD1 to light in the visible light band can be improved. Conversely, when the transmittance of the first up-conversion device UCD1 is low, a relatively large amount of light in the near-infrared light band can be converted by the first up-conversion device UCD1, and therefore, the sensing sensitivity of the first light receiving device PD1 to light in the near-infrared light band can be improved. Thus, by changing the transmittance of the first up-conversion device UCD1, the sensing sensitivity of the first light receiving device PD1 to light in both the near-infrared and visible light bands can be adjusted as needed.

[0143] Return to reference Figure 5 The thin-film encapsulation layer 300 can be disposed on multiple light-emitting devices and multiple light-receiving devices. In the display device 1 according to an embodiment of the present invention, since the first up-conversion device UCD1 is disposed on the first light-receiving device PD1, the thin-film encapsulation layer 300 can be disposed on the first up-conversion device UCD1. For example, the thin-film encapsulation layer 300 can be disposed on the capping layer 240 and the upper auxiliary electrode 530.

[0144] The thin-film encapsulation layer 300 may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. In embodiments of this invention, Figure 5 The thin-film encapsulation layer 300 is shown to include a first inorganic encapsulation layer 310, an organic encapsulation layer 320, and a second inorganic encapsulation layer 330 that are sequentially stacked on top of each other.

[0145] For example, each of the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may include one or more inorganic materials selected from alumina, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride. For example, the organic encapsulation layer 320 may include polymeric materials. Polymeric materials may include acrylic resins, epoxy resins, polyimides, and polyethylene. In embodiments of this invention, the organic encapsulation layer 320 may include acrylates. The organic encapsulation layer 320 may be formed by curing monomers or coating a polymer. The organic encapsulation layer 320 may be transparent.

[0146] Figure 7 This is a schematic cross-sectional view of a portion of a display device 1 according to an embodiment of the present invention. (See reference) Figure 7Apart from the characteristics (e.g., elements and components) of the first up-conversion device UCD1, the other characteristics (e.g., elements and components) are the same as those of the reference. Figure 5 and Figure 6 The described characteristics are the same. Figure 7 Among the various components, those referenced above Figure 5 and Figure 6 The same element as described can be used with Figure 5 and Figure 6 The same reference numerals are used in the accompanying drawings, and the differences are described below, while redundant descriptions may be omitted or briefly discussed.

[0147] refer to Figure 7 The first up-conversion device UCD1 can be disposed on the first optical receiver PD1. In this case, the first up-conversion device UCD1 and the first optical receiver PD1 can be arranged in direct contact with each other. In other words, a capping layer 240 may not be disposed between the first up-conversion device UCD1 and the first optical receiver PD1 (see [reference]). Figure 5 The first up-conversion device UCD1 can be arranged to contact the upper surface of the counter electrode 230.

[0148] The first up-conversion device UCD1 may include an auxiliary intermediate layer 520 and an upper auxiliary electrode 530. As described above, the auxiliary intermediate layer 520 may include an auxiliary emitter layer 523 (see...). Figure 6 ) and auxiliary active layer 527 (see Figure 6 Furthermore, the auxiliary intermediate layer 520 may further include a first charge-assisted layer 521 that promotes the movement of holes and electrons (see [link]). Figure 6 ), second charge auxiliary layer 525 (see Figure 6 ) and the third charge auxiliary layer 529 (see Figure 6 ).

[0149] However, in Figure 7 In the display device 1 shown, the first up-conversion device UCD1 may not include the lower auxiliary electrode 510 (see...). Figure 5 Conversely, the first up-conversion device UCD1 can use the counter electrode 230 of the first optical receiver device PD1 as the lower auxiliary electrode 510 (see...). Figure 5 In other words, the counter electrode 230 can be used together for the first optical receiver PD1 and the first up-conversion device UCD1.

[0150] When light in the near-infrared wavelength band is input to the first up-conversion device UCD1, the auxiliary active layer 527 can generate excitons, and subsequently separate the generated excitons into holes and electrons. In an embodiment of the present invention, when a (-) potential is applied to the counter electrode 230 and a (+) potential is applied to the upper auxiliary electrode 530, the holes separated in the auxiliary active layer 527 can move toward the counter electrode 230, and the electrons separated in the auxiliary active layer 527 can move toward the upper auxiliary electrode 530. For example, the holes separated in the auxiliary active layer 527 can move toward the auxiliary emitting layer 523. In this case, because electrons can move from the counter electrode 230 to the auxiliary emitting layer 523, holes and electrons can recombine in the auxiliary emitting layer 523 to emit light in the visible wavelength band.

[0151] Accordingly, because the first up-conversion device UCD1 with the above-described structure is disposed on the first light receiving device PD1, the first light receiving device PD1 can detect both light in the near-infrared wavelength band and light in the visible light wavelength band, and therefore, the sensitivity of the optical sensor including the first light receiving device PD1 can be improved. For example, when green light emitted from the first light emitting device ED1 is reflected by an object and re-intruded onto the first light receiving device PD1, the first light receiving device PD1 can detect the re-intruded light. Furthermore, when green light emitted from the auxiliary light emitting device ED4 (see...) Figure 2A When light emitted in the near-infrared wavelength band is reflected by the object and re-intruded onto the first up-conversion device UCD1, the re-intruded light can be converted into green light by the first up-conversion device UCD1, and the first light receiving device PD1 can detect the converted light. Accordingly, the display device 1 including the first up-conversion device UCD1 can sense fingerprint information not only by using light in the visible light wavelength band, but also by using light in the near-infrared wavelength band to sense biometric information.

[0152] The display device according to this embodiment can be applied to various electronic devices. Electronic devices according to embodiments of this disclosure may include the above-described display device (e.g., Figure 1 The display device may further include modules or devices with additional functions in addition to the display device.

[0153] Figure 8 This is a block diagram of an electronic device according to an embodiment.

[0154] refer to Figure 8 The electronic device 1000 according to the embodiment may include a display module 1001, a processor 1002, a memory 1003, and a power module 1004.

[0155] The processor 1002 may include at least one of a central processing unit (CPU), an application processor (AP), a graphics processing unit (GPU), a communication processor (CP), an image signal processor (ISP), and a controller.

[0156] The memory 1003 can store data information required for the operation of the processor 1002 or the display module 1001. When the processor 1002 executes the application program stored in the memory 1003, image data signals and / or input control signals can be transmitted to the display module 1001, and the display module 1001 can process the received signals and output image information through the display screen.

[0157] The power module 1004 may include a power supply module such as a power adapter or battery device, and a power conversion module that converts the power supplied by the power supply module to generate the power required for the operation of the electronic device 1000.

[0158] At least one of the components of the electronic device 1000 described above may be included in the display device according to the above embodiments. Furthermore, a portion of each individual module functionally included in a single module may be included in the display device, while another portion may be provided separately from the display device. For example, the display device may include a display module 1001, and the processor 1002, memory 1003, and power module 1004 may be provided within the electronic device 1000 in the form of other devices besides the display device.

[0159] In an embodiment, the display module 1001 included in the display device can be driven based on image data signals and input control signals received from the processor 1002.

[0160] Figure 9 These are schematic diagrams of electronic devices according to various embodiments.

[0161] refer to Figure 9 Various electronic devices to which the display device according to the embodiments is applied may include not only image display electronic devices such as smartphones 1000a, tablet PCs 1000b, laptop computers 1000c, televisions 1000d and desktop monitors 1000e, but also wearable electronic devices including display modules such as smart glasses 1000f, head-mounted displays 1000g and smartwatches 1000h, and vehicle electronic devices 1000i including dashboards, center consoles and display modules such as CID (Center Information Display) and rearview mirror displays disposed in the dashboard.

[0162] In the display device according to the embodiments of the present invention as described above, the sensing sensitivity of the light receiving device can be improved. However, the above effects are merely examples, and the scope of the present invention is not limited thereto.

[0163] Although the present invention has been described with reference to exemplary embodiments thereof, those skilled in the art will understand that various modifications in form and detail may be made thereto without departing from the spirit and scope of the present invention.

Claims

1. A display device, comprising: The substrate includes an emission region and a sensing region; A light-emitting device is disposed on the substrate corresponding to the emission region; A light receiving device is disposed on the substrate to correspond to the sensing area; as well as Up-conversion device, covering the optical receiving device.

2. The display device according to claim 1, wherein, The up-conversion device is configured to convert light in a first wavelength band into light in a second wavelength band and emit the converted light, wherein the up-conversion device is configured to receive the light in the first wavelength band from an external source, and The light in the second wavelength band has a wavelength shorter than that of the light in the first wavelength band.

3. The display device according to claim 2, wherein, The upconversion device is configured to convert light in the near-infrared wavelength band into light in the visible wavelength band and emit the converted light, wherein the upconversion device is configured to receive the light in the near-infrared wavelength band from the outside.

4. The display device according to claim 1, wherein, The optical receiving device includes: Sensing electrodes; An active layer is disposed on the sensing electrode; and The electrodes are disposed on the active layer, and The light-emitting device includes: Pixel electrode; An emission layer is disposed on the pixel electrode; and The electrodes are disposed on the emission layer, and The counter electrode of the light receiving device and the counter electrode of the light emitting device are formed as a single unit on the substrate.

5. The display device according to claim 4, wherein, The up-conversion device includes: The lower auxiliary electrode is disposed on the counter electrode; An auxiliary intermediate layer is disposed on the lower auxiliary electrode; and An upper auxiliary electrode is disposed on the auxiliary intermediate layer.

6. The display device according to claim 5, wherein, The auxiliary intermediate layer includes: An auxiliary emission layer is disposed on the lower auxiliary electrode; and An auxiliary active layer is disposed on the auxiliary emission layer.

7. The display device according to claim 4, wherein, The up-conversion device includes: An auxiliary intermediate layer is disposed on the counter electrode; and An upper auxiliary electrode is disposed on the auxiliary intermediate layer.

8. The display device according to claim 7, wherein, The auxiliary intermediate layer includes: An auxiliary emission layer is disposed on the counter electrode; and An auxiliary active layer is disposed on the auxiliary emission layer.

9. The display device according to claim 7, wherein, The upper surface of the counter electrode and the lower surface of the auxiliary intermediate layer are in contact with each other.

10. The display device according to claim 9, wherein, The counter electrode of the optical receiver is also used as the lower auxiliary electrode of the up-conversion device.

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