Pretreatment device before detection of large-size epitaxial silicon wafer

Abstract

A pretreatment device before large-size epitaxial silicon wafer detection comprises an ozone generator, a constant-temperature water container and a spraying device which are connected in sequence, the constant-temperature water container is a vertical tank, the top of the constant-temperature water container is connected with the spraying device through an exhaust pipeline, and an air inlet header pipe is inserted into the bottom of the constant-temperature water container; the lower end of the gas inlet main pipe is connected with the ozone generator through a gas inlet pipeline, the upper end of the gas inlet main pipe is positioned in the constant-temperature water container and is provided with a plurality of gas inlet branch pipes which are radially distributed, the gas inlet branch pipes are distributed along the horizontal direction, and any gas inlet branch pipe is provided with a plurality of gas nozzles along the longitudinal direction of the gas inlet branch pipe. The device is used for improving the heating effect of ozone, so that the passivation process of epitaxial silicon wafers is stably carried out, and the requirements of large-scale industrial application are met.

Description

TECHNICAL FIELD

[0001] The utility model relates to big size epitaxial silicon wafer detection technical field, and specifically is a kind of big size epitaxial silicon wafer detection before pretreatment device. BACKGROUND

[0002] Epitaxial silicon wafer needs to be pretreated before resistivity detection, including pickling, passivation, washing and other processes.The passivation process usually uses high-temperature hydrogen peroxide soaking, which forms a passivation layer on the surface of epitaxial silicon wafer by using the strong oxidizing property of hydrogen peroxide.However, it is easy to affect the health of personnel due to the strong oxidizing property of hydrogen peroxide in actual implementation.

[0003] To solve the above technical problems, Sichuan Guangrui Semiconductor Co., Ltd. discloses a kind of epitaxial silicon wafer pretreatment system in CN211605111U, ozone generated by ozone generator is used as passivation treatment to oxidize epitaxial silicon wafer to form passivation layer, personnel do not need to wear protective equipment during operation, and the operation difficulty is low and the workload is small.

[0004] However, in the technical solution, only hot water in a bubble bottle is used to heat and warm the ozone, and the ozone generated by the ozone generator is directly sprayed upward into the hot water in the bubble bottle, and then quickly escapes from the hot water, which results in that the heating time of the hot water for the ozone is too short, and the heating effect is poor, which cannot meet the needs of large-scale industrial application. UTILITY MODEL CONTENTS

[0005] The utility model aims to provide a kind of pretreatment device before the detection of big size epitaxial silicon wafer, improve the heating effect of ozone to make the passivation process of epitaxial silicon wafer stable, and meet the needs of large-scale industrial application.

[0006] To solve the above technical problems, the utility model adopts the technical scheme: a kind of pretreatment device before the detection of big size epitaxial silicon wafer, including ozone generator, constant-temperature water container and injection device connected in sequence, the constant-temperature water container is vertical tank, the top of constant-temperature water container is connected with injection device through exhaust pipeline, the bottom of constant-temperature water container is inserted with intake manifold, the lower end of intake manifold is connected with ozone generator through intake pipeline, the upper end of intake manifold is located in constant-temperature water container and is provided with multiple intake branch pipes distributed in radial, intake branch pipe is distributed along horizontal direction, and multiple injection nozzles are arranged on any intake branch pipe along the longitudinal direction of itself.

[0007] Preferably, the injection nozzles on all intake branch pipes are distributed in the same ring direction.

[0008] Preferably, the injection ends of the injection nozzles are inclined downward.

[0009] Preferably, the injection ends of the injection nozzles are provided with metal wire meshes for refining the ejected ozone gas.

[0010] Preferably, the constant-temperature water container is provided with a heating coil pipe, the lower end of the heating coil pipe is connected with a water inlet pipe extending out of the constant-temperature water container, and the upper end of the heating coil pipe is connected with a water outlet pipe extending out of the constant-temperature water container.

[0011] Preferably, the water inlet pipe and the water outlet pipe are connected to the same hot water bag, and the hot water bag is further provided with an electric heating assembly.

[0012] Preferably, the heating coil pipe and the air inlet main pipe are concentrically distributed in the constant-temperature water container, and the radius of the heating coil pipe is smaller than the length of the air inlet branch pipe.

[0013] Preferably, the top of the constant-temperature water container is provided with a guide cone section.

[0014] The utility model discloses a vertical tank is used as the constant-temperature water container to heat the ozone generated by the ozone generator, makes the ozone enter hot water from the bottom of the constant-temperature water container, and then escapes from the hot water after passing a long distance, and then is sprayed on the surface of the silicon wafer for passivation through the spraying device, and the distance and time of heating by the hot water are guaranteed, which is beneficial to large-scale industrial application.

[0015] In addition, the ozone in the utility model moves not only upwards in the constant-temperature water container, but also obtains an initial speed in the horizontal direction through the horizontally distributed air inlet branch pipe and the air injection nozzle distributed on the air inlet branch pipe, and forms a spiral ascending motion track in combination with the buoyancy of the ozone in the water, so that the motion distance and time of the ozone in the water are further improved, and the ozone is further heated more sufficiently, and the ozone can be sprayed on the silicon wafer through the spraying device to realize stable passivation effect at a suitable temperature. BRIEF DESCRIPTION OF DRAWINGS

[0016] Figure 1 It is a sectional view structure schematic diagram of the utility model;

[0017] Figure 2 It is a sectional view structure schematic diagram of A-A in Figure 1

[0018] Mark in the drawing: 1, constant-temperature water container, 2, water outlet pipe, 3, heating coil pipe, 4, air inlet main pipe, 5, air inlet pipeline, 6, air inlet branch pipe, 7, air injection nozzle, 8, water inlet pipe, 9, water body, 10, air outlet pipeline. DETAILED DESCRIPTION

[0019] ​The utility model discloses a pretreatment device before the detection of large size epitaxial silicon wafer, and the technical scheme of the related patent mentioned in background art is same, all the ozone prepared by ozone generator is heated to about 80 DEG C through constant temperature water container 1, then is sprayed on the surface of epitaxial silicon wafer through spraying device and carries out passivation, realizes passivation pretreatment process before the conductivity detection of epitaxial silicon wafer, and replaces hydrogen peroxide that is more harmful to personnel health. Different from the technical scheme, the utility model uses vertical tank as constant temperature water container 1, and makes ozone have longer moving stroke and time in constant temperature water container 1, so that it can be heated more fully by hot water in constant temperature water container 1, and then meet large-scale industrial application.

[0020] As Figure 1 And Figure 2 The utility model discloses a constant temperature water container 1 is cylindrical, has greater longitudinal space in the inside to accommodate water body 9, is favorable to prolong the time and stroke of ozone from bottom to top through water body 9, thereby obtains more stable heating effect. The top of constant temperature water container 1 is provided with a guide cone section, and the guide cone section is used for guiding the ozone escaping from water body 9 in constant temperature water container 1 towards the top, so that the ozone enters the spraying device (not shown in the figure) through the exhaust pipeline 10 at the top of the guide cone section.

[0021] The bottom center position of constant temperature water container 1 is inserted with a gas inlet main pipe 4. The lower end of gas inlet main pipe 4 is located outside constant temperature water container 1, and is connected with ozone generator (not shown in the figure) through gas inlet pipeline 5. The upper end of gas inlet main pipe 4 is located in constant temperature water container 1 and is connected with four gas inlet branch pipes 6. The four gas inlet branch pipes 6 are all distributed along the horizontal direction, and a plurality of gas injection nozzles 7 are arranged on any gas inlet branch pipe 6. Figure 2 As shown in the figure, all the gas injection nozzles 7 are distributed on the side of the corresponding gas inlet branch pipe 6 along the same ring direction, so that the ozone can obtain a certain initial speed in the horizontal direction after being sprayed out through each gas injection nozzle 7, and the ozone can pass through water body 9 in constant temperature water container 1 in a spiral ascending manner by cooperating with the buoyancy of ozone in water body 9. Thus, compared with the mode that the ozone directly passes through water body 9 along the vertical direction upward in the background art, the utility model can greatly increase the stroke and time of ozone passing through water body 9, so that the ozone can obtain more stable heating effect.

[0022] Further, the plurality of air injection nozzles 7 are arranged along the longitudinal direction of the air inlet branch pipe 6, the radius of the spiral rising track of the ozone injected by the air injection nozzles 7 far from the air inlet main pipe is larger, and the radius of the spiral rising track of the ozone injected by the air injection nozzles 7 close to the air inlet main pipe is relatively smaller, so that the spiral rising tracks of the ozone are formed, the water body 9 in the constant-temperature water container 1 can be contacted with the ozone at the corresponding position in the radial direction, and then the heat energy in the water body 9 is fully utilized.

[0023] In order to realize the heat preservation of the water body 9, the utility model discloses a heating coil 3 in the constant-temperature water container 1, the constant-temperature water container 1 is equipped with the heating coil 3, the lower end of the heating coil 3 is connected with the water inlet pipe 8 extending out of the constant-temperature water container 1, and the upper end of the heating coil 3 is connected with the water outlet pipe 2 extending out of the constant-temperature water container 1. The water inlet pipe 8 and the water outlet pipe 2 are connected to the same hot water bag and realize water circulation through the water pump. In the embodiment, the radius of the heating coil 3 is smaller than the length of the air inlet branch pipe 6, so that the heating coil 3 is located at the middle position of the constant-temperature water container 1 in the radial direction, the water body 9 in the constant-temperature water container 1 is uniformly heated, and the water body 9 keeps stable temperature.

Claims

1. A pretreatment device for large-size epitaxial silicon wafers before inspection, comprising an ozone generator, a constant-temperature water container (1), and a spraying device connected in sequence, characterized in that: The constant temperature water container (1) is a vertical tank. The top of the constant temperature water container (1) is connected to the spray device through the exhaust pipe (10). The bottom of the constant temperature water container (1) is provided with an air intake main pipe (4). The lower end of the air intake main pipe (4) is connected to the ozone generator through the air intake pipe (5). The upper end of the air intake main pipe (4) is located in the constant temperature water container (1) and is provided with multiple air intake branch pipes (6) arranged radially. The air intake branch pipes (6) are distributed in the horizontal direction. Multiple air nozzles (7) are provided on any air intake branch pipe (6) along its own longitudinal direction.

2. The pretreatment apparatus for large-size epitaxial silicon wafers before inspection as described in claim 1, characterized in that: The nozzles (7) on all intake manifolds (6) are distributed in the same circumferential direction.

3. The pretreatment apparatus for large-size epitaxial silicon wafers before inspection as described in claim 1, characterized in that: The jet nozzle (7) has its jet tip angled downwards.

4. The pretreatment apparatus for large-size epitaxial silicon wafers before inspection as described in claim 1, characterized in that: The nozzle (7) has a metal mesh at the nozzle end for refining the ozone gas.

5. The pretreatment apparatus for large-size epitaxial silicon wafers before inspection as described in claim 1, characterized in that: The constant temperature water container (1) is equipped with a heating coil (3), the lower end of the heating coil (3) is connected to an inlet pipe (8) extending out of the constant temperature water container (1), and the upper end of the heating coil (3) is connected to a drain pipe (2) extending out of the constant temperature water container (1).

6. The pretreatment apparatus for large-size epitaxial silicon wafers before inspection as described in claim 4, characterized in that: The inlet pipe (8) and the drain pipe (2) are connected to the same hot water tank, which is also equipped with an electric heating element.

7. The pretreatment apparatus for large-size epitaxial silicon wafers before inspection as described in claim 4, characterized in that: The heating coil (3) and the main air inlet pipe (4) are both concentrically distributed in the constant temperature water container (1), and the radius of the heating coil (3) is smaller than the length of the main air inlet pipe (6).

8. The pretreatment apparatus for large-size epitaxial silicon wafers before inspection as described in claim 1, characterized in that: The top of the constant temperature water container (1) is provided with a guide cone section.

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