Perovskite photovoltaic module based on Low-E glass

Abstract

The utility model discloses a perovskite photovoltaic assembly based on Low-E glass, and relates to the field of perovskite photovoltaic technology, the perovskite photovoltaic assembly comprises conductive Low-E glass and a perovskite layer, the conductive Low-E glass and the perovskite layer are arranged in a composite manner, and the conductive Low-E glass is used as a transparent conductive electrode layer of the perovskite photovoltaic assembly. According to the utility model, the Low-E glass is directly used as the transparent conductive electrode to be applied to the perovskite photovoltaic module, so that the perovskite photovoltaic module has the effects of reducing process steps, reducing the thickness of the module, reducing the use of raw materials, reducing the cost of the raw materials and overcoming the defects of the traditional transparent conductive electrode.

Description

TECHNICAL FIELD

[0001] The utility model relates to perovskite photovoltaic technical field more specifically, it relates to a kind of perovskite photovoltaic module based on Low-E glass. BACKGROUND

[0002] Photovoltaic module, also known as solar panel, is the core part of solar power generation system. It is mainly connected by a plurality of monomer solar cell pieces through series and parallel connection, and is made by encapsulation processing, which can provide direct current output alone. The main function of photovoltaic module is to convert solar energy into electrical energy, which can be stored in storage battery or directly drive load to work. With the continuous progress of technology and the continuous reduction of cost, photovoltaic module will have a broader application prospect in various fields.

[0003] In the field of solar modules, perovskite solar modules have become the focus of research and application due to their high photoelectric conversion efficiency, solution processability and relatively low cost. Integrating them with buildings can make full use of building surface space and achieve building power generation function, effectively reducing building energy consumption, and has extremely broad application prospect.

[0004] Transparent conductive electrode is a key part of perovskite solar module. Although traditional indium tin oxide (ITO) transparent conductive electrode has good conductivity and transparency, it is often used as transparent conductive electrode in the preparation of perovskite solar module. However, indium resources are scarce, the cost is high, and the stability is poor in high temperature and humid environment, which seriously restricts the large-scale application and development of perovskite solar module.

[0005] Low-E glass, also known as Low-Emissivity Glass, is a product coated with multiple layers of metal or other compound films on the surface of glass, which has the characteristics of high transmittance for visible light and high reflectivity for medium and far infrared. Compared with ordinary glass and traditional building coated glass, Low-E glass has excellent heat insulation effect and good light transmittance. The emissivity of Low-E glass is much lower than that of ordinary glass, which is usually around 0.84, while the emissivity of Low-E glass can be reduced to below 0.15, even lower. This low emissivity makes Low-E glass perform well in heat preservation and insulation, effectively reducing the loss of indoor heat and the intrusion of outdoor heat. In addition, Low-E glass also has certain electrical conductivity, which mainly depends on the metal material in the coating layer, especially the silver coating layer. The free electrons in the silver coating layer move directionally under the action of electric field, forming a current path, so that the surface of the glass has electrical conductivity. The electrical conductivity of Low-E glass together with its heat insulation and light transmission performance constitutes its core advantage in building energy saving.

[0006] The conventional perovskite photovoltaic module is prepared on a transparent conductive substrate, wherein the transparent conductive substrate is a glass coated with a layer of indium tin oxide (ITO) or fluorine-doped tin oxide (FTO), and the remaining part of the perovskite photovoltaic module is prepared on the transparent conductive substrate coated with ITO or FTO, at this time, the prepared perovskite photovoltaic module is an independent whole. When the perovskite photovoltaic module is used as a building photovoltaic application, for example, the Low-E glass with good conductivity and low radiation, heat preservation and insulation is combined with the perovskite photovoltaic module for application, at this time, the above-mentioned perovskite photovoltaic module as an independent whole needs to be combined with the Low-E glass separately.

[0007] For example, a Chinese utility model patent with the patent authorization announcement No. CN 221807575 U discloses a power generation glass and curtain wall glass based on perovskite photovoltaic module, the curtain wall glass includes a first glass layer, a first adhesive film layer, a perovskite photovoltaic module, a second adhesive film layer and a second glass layer which are stacked in turn from the outside to the inside, and a high-transmittance Low-E film is attached to the inside of the third glass layer, the Low-E film plays a role of blocking thermal energy.

[0008] For example, a Chinese invention patent with the patent application publication No. CN108625517 A discloses a new energy-saving power generation glass curtain wall based on transparent perovskite photovoltaic module, the transparent perovskite photovoltaic module is fixed on the back of the Low-E glass by the encapsulation adhesive, and the heat insulation and heat preservation performance of the Low-E glass provides a stable and good application environment for the perovskite photovoltaic module.

[0009] The above-mentioned prior art scheme combines the Low-E glass and the perovskite photovoltaic module, and uses the heat insulation and heat preservation characteristics of the Low-E glass to protect the perovskite module.

[0010] However, these technical schemes have the following defects: first, the structural integration is low, the Low-E glass and the perovskite module are combined in the form of independent parts by simple adhesion and attachment, which not only has poor combination stability, but also adds additional composite / integration process; second, the material and thickness are increased: since the perovskite photovoltaic module itself has a glass coated with ITO or FTO as a transparent conductive electrode, and a layer of Low-E glass is added, the combined structure will have an additional glass layer compared to the perovskite photovoltaic module itself, and the multi-layer stacking design will increase the overall thickness and the required materials; finally, there is still a problem of material cost pain point: the manufacture of the perovskite photovoltaic module still relies on the use of indium tin oxide (ITO) as a rare and expensive raw material as a transparent electrode, and the use of indium-based materials cannot be reduced or replaced through structural design, so the cost of raw materials is high. Utility model content

[0011] In view of this problem in actual application, the utility model aims at providing a perovskite photovoltaic module based on Low-E glass, which directly uses Low-E glass as a transparent conductive electrode applied to the perovskite photovoltaic module, so as to reduce process steps, reduce the thickness of the module and the use of raw materials, and reduce the cost of raw materials, overcome the defects of traditional transparent conductive electrodes, open up a new path for the development of perovskite photovoltaic modules, and the specific scheme is as follows:

[0012] A perovskite photovoltaic module based on Low-E glass, comprising conductive Low-E glass and a perovskite layer, wherein the conductive Low-E glass is used as a transparent conductive electrode layer of the perovskite photovoltaic module.

[0013] Further, the conductive Low-E glass has a silver plating layer, which is used as a cell electrode of the transparent conductive electrode layer of the perovskite photovoltaic module, and the sheet resistance of the silver plating layer is 0.9-2 Ω / sq.

[0014] Further, the conductive Low-E glass is double-silver or triple-silver Low-E glass, and the light transmittance of the conductive Low-E glass is 40%-70%.

[0015] Further, the conductive Low-E glass further has an intermediate film layer.

[0016] The intermediate film layer is a composite stack structure of a dielectric layer and a functional layer, wherein the stacking times and the material thickness of the dielectric layer and the functional layer can be adjusted.

[0017] Further, the perovskite photovoltaic module further comprises a first charge transport layer, a second charge transport layer, a buffer layer, an electrode layer and an outer protective layer, and the conductive Low-E glass, the first charge transport layer, the perovskite layer, the second charge transport layer, the buffer layer, the electrode layer and the outer protective layer are sequentially and compositely stacked.

[0018] Further, when a self-cleaning glass structure is arranged on one side of the perovskite photovoltaic module, a hollow layer is arranged between the perovskite photovoltaic module and the self-cleaning glass structure, and the hollow layer is filled with inert gas, and the self-cleaning glass structure is located on the side of the perovskite photovoltaic module far from the conductive Low-E glass.

[0019] Compared with the prior art, the utility model has the beneficial effects as follows:

[0020] (1) The utility model discloses a conductive Low-E glass is used as transparent conductive electrode layer and is applied to perovskite photovoltaic module, has the advantage on performance: utilize the good low radiation performance of Low-E glass itself, with Low-E glass as base carrier, and with the silver plating layer of Low-E glass directly as substrate electrode, the Low-E glass of electric conductivity satisfies the basic conductive demand of perovskite solar module, and the structure is optimized compact, and the preparation and application performance are stable, when constituting perovskite solar module, can effectively block the transfer of indoor and outdoor heat, play the role of heat preservation and insulation, guarantee the safe use, in hot summer, can reduce the outdoor heat into the room, reduce indoor air conditioning refrigeration energy consumption, in cold winter, can prevent the indoor heat loss, reduce the heating energy consumption, and the conductive Low-E glass and the other functional layer of entire perovskite photovoltaic module are good in compatibility, guarantee the stable performance of component, and long -term use is not easy to appear performance attenuation.

[0021] (2) The utility model discloses a conductive Low-E glass is used as transparent conductive electrode layer and is applied to perovskite photovoltaic module, replaces the indium tin oxide (ITO) of prior art and is used as transparent conductive electrode and is applied to perovskite photovoltaic module, has the advantage on cost: avoid the large use of the transparent conductive material of indium tin oxide (ITO) in prior art on perovskite photovoltaic module, greatly reduce the raw material cost, at the same time, reduce the process step of depositing additional transparent conductive electrode, also reduce the operation such as assembling, adhering of the component based on glass-ITO and so on low-E glass, greatly simplify the technological process, reduce the equipment investment and energy consumption cost in production process, make the preparation cost of entire component significantly reduce.

[0022] (3) The utility model also has the advantage on environmental protection: because avoid the large use of scarce metal indium, reduce the environmental damage brought by the exploitation of indium ore, play the role of environmental protection, at the same time, in the production process, because the process step is simplified, reduce the amount of chemical reagent and the generation of waste, meet the green environmental protection production concept, in building integration application, reduce the building energy consumption, indirectly reduce the carbon emission due to power generation, have positive significance to environmental protection. BRIEF DESCRIPTION OF DRAWINGS

[0023] Figure 1 It is the whole schematic diagram of film layer of perovskite photovoltaic module in example 1.

[0024] Fig. 1, conductive Low-E glass; 2, first charge transport layer; 3, perovskite layer; 4, second charge transport layer; 5, buffer layer; 6, electrode layer; 7, outer protective layer. DETAILED DESCRIPTION

[0025] Clearly, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments.

[0026] Embodiment 1

[0027] A perovskite photovoltaic module, such as shown in the figure, comprises a conductive Low-E glass 1, a first charge transport layer 2, a perovskite layer 3, a second charge transport layer 4, a buffer layer 5, an electrode layer 6, and an outer protective layer 7, which are sequentially laminated and composed. Figure 1

[0028] The conductive Low-E glass 1 is directly used as a transparent conductive electrode layer in the perovskite photovoltaic module by virtue of its own conductivity, and is applied in the perovskite photovoltaic module. The conductive Low-E glass 1 has better low radiation, and when the perovskite photovoltaic module with the conductive Low-E glass 1 is applied in the field of buildings, it can effectively block the transfer of indoor and outdoor heat and play a role in heat preservation and insulation.

[0029] Compared with the prior art in which a layer of traditional raw material indium tin oxide (ITO) or fluorine-doped tin oxide (FTO) is first plated on the glass as a transparent conductive electrode, and then the remaining part of the perovskite photovoltaic module is prepared on the transparent conductive substrate plated with ITO or FTO, and then combined with the Low-E glass, the present embodiment directly uses the conductive Low-E glass 1 as the transparent conductive electrode layer of the perovskite photovoltaic module, which not only avoids the instability of the simple combination of the perovskite photovoltaic module and the Low-E glass, but also omits the process of depositing indium tin oxide (ITO) or fluorine-doped tin oxide (FTO) on the glass, i.e. reduces the process steps of depositing an additional transparent conductive electrode. In addition, there is no need to assemble and adhere the Low-E glass on the perovskite photovoltaic module based on glass-ITO materials, which not only reduces a layer of glass and greatly reduces the thickness of the module, but also greatly simplifies the process flow, reduces the equipment investment, raw material investment and energy consumption cost in the production process, and significantly reduces the preparation cost of the entire module. Moreover, since indium tin oxide (ITO) is no longer used as a transparent electrode, the use of indium tin oxide (ITO) is avoided, and the raw material cost of the conductive Low-E glass 1 is greatly reduced compared with the raw material cost of indium tin oxide (ITO).

[0030] Specifically, in the present embodiment:

[0031] ​The conductive Low-E glass 1 has a silver-plated layer, which serves as the cell electrode of the perovskite photovoltaic module. As a core functional layer, the silver-plated layer is directly responsible for low-emissivity characteristics, and its sheet resistance is 0.9-2 Ω / sq. All other film layers on the perovskite photovoltaic module, except for the transparent conductive electrode layer, are sequentially stacked based on the silver-plated layer of the conductive Low-E glass 1.

[0032] The conductive Low-E glass 1 glass substrate serves as the conductive electrode substrate for the transparent conductive electrode layer on the perovskite photovoltaic module.

[0033] The conductive Low-E glass 1 also has an intermediate film layer, which is a composite stacked structure of dielectric layer / functional layer. Preferably, the intermediate film layer is a Si3N4 or TiO2 dielectric layer, a ZnO or SnO2 dielectric layer, and an Ag functional layer. The stacking number and material thickness of the dielectric layer and functional layer can be adjusted according to actual needs. The dielectric layer is used to optimize visible light transmittance and color neutrality.

[0034] In one possible embodiment, the composite film structure of the conductive Low-E architectural glass includes, from the glass substrate outwards, the following layers in sequence: ZnOx or TiOx layer, Ag layer, Ti or NiCr layer, ZnOx or SiNx layer, Ag layer, Ti or NiCr layer, ZnOx or SiNx layer, and Ag layer.

[0035] Preferably, the conductive Low-E glass 1 is double-silver or triple-silver Low-E glass. The light transmittance of the conductive Low-E glass 1 is 40%-70%.

[0036] The materials of the first charge transport layer 2 and the second charge transport layer 4 are electron transport layer materials such as SnO2 or hole transport layer materials such as SAMs, NiOx, and PTAA.

[0037] The perovskite layer 3 is made of a perovskite material with adjustable composition, including elements such as Cs, MA, FA, Pb, I, Br, and Cl, which are mixed in a certain proportion. It is prepared by methods such as spin coating, blade coating, and slot coating.

[0038] The materials for buffer layer 5 include BCP, MoOx, SnO2, etc.

[0039] Electrode layer 6 includes opaque metal electrodes such as Ag, Au, and Cu, or flexible transparent conductive film layers including conductive films of metal oxides such as ITO, IWO, and IZO, silver nanowires, and multilayer composite transparent materials such as ITO / Cu / ITO, etc.

[0040] The outer protective layer 7 can be a transparent, weather-resistant polymer film to effectively resist ultraviolet rays, moisture and mechanical damage; or it can be a metal oxide deposited by atomic layer deposition, etc.

[0041] More specifically, when conductive Low-E glass 1 is used as a transparent conductive electrode layer in perovskite photovoltaic modules, it has good compatibility with other functional layers on the perovskite photovoltaic modules, ensuring the stable performance of the entire photovoltaic module and preventing performance degradation over long-term use.

[0042] Based on this, when a self-cleaning glass structure is installed on one side of the perovskite photovoltaic module, a hollow layer is provided between the perovskite photovoltaic module and the self-cleaning glass structure. This results in a multi-layered composite structure of self-cleaning glass + hollow layer + perovskite photovoltaic module, with the self-cleaning glass structure located on the side of the perovskite photovoltaic module away from the conductive Low-E glass 1. Furthermore, the hollow layer is filled with an inert gas to enhance the stability of the perovskite photovoltaic module. In one possible embodiment, when the perovskite photovoltaic module with conductive Low-E glass 1 is used in a triple-glass, two-cavity building application, the perovskite photovoltaic module with conductive Low-E glass 1 can serve as the outermost layer of the building, with a cavity between it and the adjacent building glass. This cavity is filled with an inert gas, such as nitrogen. Combined with the stable performance of the perovskite module with conductive Low-E glass 1, this reduces the potential damage to the module caused by environmental factors and improves stability.

[0043] Example 2

[0044] This embodiment provides a method for preparing the perovskite photovoltaic module in Embodiment 1, including the following steps:

[0045] Step 1) P1 is etched on a conductive Low-E glass substrate using a near-infrared nanosecond or green picosecond laser scribing process, wherein the spacing of the P1 scribing lines is 4-8 mm and the width is 20-50 μm.

[0046] Step 2) Use glass cleaner and deionized water to ultrasonically clean the substrate after P1 etching and then dry it with dry air.

[0047] Step 3) Prepare a nickel oxide hole transport layer (i.e., prepare the first charge transport layer 2) and a passivation layer sequentially, wherein:

[0048] The nickel oxide hole transport layer is prepared by magnetron sputtering or solution method, with a thickness of 5-20 nm, preferably 20 nm. The solution method includes: spin-coating a NiOx dispersion onto a substrate that has been treated with ultraviolet ozone for 10-30 min, preferably 10 min. The spin-coating conditions are: low speed 500-1500 rpm for 3-10 s, high speed 3000-6000 rpm for 30-60 s, annealing at 150-200℃ for 5-30 min, preferably low speed 500 rpm for 3 s, high speed 4000 rpm for 30 s, annealing at 150℃ for 30 min.

[0049] The passivation layer is made of a monolayer material or an organic ammonium salt material. Taking 2PACz monolayer material as an example, when it is prepared by spin coating, the spin coating conditions are as follows: 2PACz material is prepared by spin coating at a low speed of 3000-5000 rpm for 30-60 seconds and then annealed at 90-110℃ for 10-30 minutes. Preferably, 2PACz material is prepared by spin coating at a low speed of 3000 rpm for 30 seconds and then annealed at 100℃ for 10 minutes.

[0050] Step 4) Spin-coat the perovskite pre-solid and anneal to form a perovskite thin film light-absorbing layer (i.e., prepare perovskite layer 3), followed by the preparation of a surface passivation layer, wherein:

[0051] The perovskite precursor solution contains PbI2, FAI, MAI, MACl, PbBr2, and PbCl2, and the solvent is a DMF / NMP mixed system or a DMF / DMSO system. The solution and solvent are mixed and dissolved at room temperature for 1-12 hours, preferably 12 hours, with a concentration of 1.5-1.7 M.

[0052] The spin coating parameters are 2000-5000 rpm, with 100-300 μL of chlorobenzene added dropwise in the last 5-10 seconds. The annealing conditions are 100-150℃ for 5-30 min, preferably 5000 rpm, with 300 μL of chlorobenzene added dropwise in the last 5 seconds, and the annealing conditions are 100℃ for 30 min.

[0053] The surface passivation layer is prepared by spin coating, and the materials are selected from organic salts, 2D materials, and small molecule materials. Taking 2-thiophene ethyl ammonium chloride as an example, the preparation conditions for spin coating are as follows: 2-thiophene ethyl ammonium chloride is prepared by spin coating at a low speed of 3000-5000 rpm for 30-60 seconds and then annealing at 100-130℃ for 3-10 minutes. Preferably, 2-thiophene ethyl ammonium chloride is prepared by spin coating at a low speed of 3000 rpm for 30 seconds and then annealing at 110℃ for 3 minutes.

[0054] Step 5) Preparation of electron transport layer (i.e., preparation of second charge transport layer 4): The electron transport layer is prepared by vacuum thermal deposition of a fullerene C60 layer with a thickness of 10-50 nm, preferably 20 nm, or by solution spin coating of PCBM layer, with spin coating conditions of 5-20 mg / ml, rotation speed of 2500-4000 rpm, time of 30-60 s, annealing at 70-120℃ for 5-30 min, preferably 20 mg / ml, rotation speed of 2500 rpm, time of 30 s, annealing at 100℃ for 10 min.

[0055] Step 6) Prepare the interface buffer layer (i.e., prepare buffer layer 5): The interface buffer layer 5 is a BCP layer with a thickness of 5-20 nm prepared by vacuum deposition or a tin oxide layer with a thickness of 10-50 nm prepared by atomic deposition.

[0056] Step 7) P2 etching is performed using a green picosecond laser scribing process, wherein the distance between the P2 scribing and P1 is 30-100μm and the width is 40-100μm.

[0057] Step 8) Prepare electrode layer 6: including a metal electrode layer and a transparent electrode layer. The metal electrode layer is a 50-200nm Cu layer prepared by magnetron sputtering, preferably 100nm. The transparent electrode layer includes a semi-transparent electrode layer. The semi-transparent electrode is a mixed layer of ITO and Cu with a total thickness of 50-200nm prepared by magnetron sputtering, preferably 100nm, such as an ITO / Cu / ITO stacked structure.

[0058] Step 9) Etch P3 using a green picosecond or ultraviolet picosecond laser scribing process, wherein the distance between the P3 scribing and P2 is 30-100μm and the width is 40-100μm.

[0059] Example 3

[0060] This embodiment illustrates the application of Low-E glass in perovskite photovoltaic modules as described in Embodiments 1 and 2. The conductive Low-E glass is used as a transparent conductive electrode layer in the perovskite photovoltaic module.

[0061] Example 4

[0062] This embodiment illustrates the application of perovskite photovoltaic modules in building integration as described in Embodiments 1 and 2.

[0063] When perovskite photovoltaic modules are integrated into buildings, their appearance can be adjusted according to design requirements, with adjustable color and transparency to blend seamlessly with the overall architectural style. The overall light transmittance of the solar module is achieved by adjusting the film thickness of the perovskite layer, the module's marking design, or the band gap of the perovskite layer; this technology is existing and will not be elaborated upon further here.

[0064] In addition, perovskite photovoltaic modules are flexible and diverse in their installation methods, and can be made into photovoltaic curtain walls, photovoltaic roofs, etc., which not only realizes the self-generation function of buildings, but also enhances the aesthetics and technological feel of buildings.

[0065] The above description is merely a preferred embodiment of this utility model. The protection scope of this utility model is not limited to the above embodiments. All technical solutions falling within the scope of this utility model's concept are protected. It should be noted that for those skilled in the art, any improvements and modifications made without departing from the principle of this utility model should also be considered within the protection scope of this utility model.

Claims

1. A perovskite photovoltaic module based on Low-E glass, characterized in that, The conductive Low-E glass and the perovskite layer are arranged in a composite manner, wherein the conductive Low-E glass serves as a transparent conductive electrode layer of the perovskite photovoltaic assembly.

2. The Low-E glass based perovskite photovoltaic module according to claim 1, characterized in that, The conductive Low-E glass has a silver plating layer serving as a cell electrode of the transparent conductive electrode layer on the perovskite photovoltaic assembly, and the sheet resistance of the silver plating layer is 0.9-2 Ω / sq.

3. The Low-E glass based perovskite photovoltaic module according to claim 2, characterized in that, The conductive Low-E glass is double-silver or triple-silver Low-E glass, and the light transmittance of the conductive Low-E glass is 40%-70%.

4. The Low-E glass based perovskite photovoltaic module according to claim 1, wherein, The conductive Low-E glass further has an intermediate film layer. The intermediate film layer is a composite stack structure of a dielectric layer and a functional layer, wherein the stacking times and material thicknesses of the dielectric layer and the functional layer can be adjusted.

5. The Low-E glass based perovskite photovoltaic module according to claim 1, wherein, The perovskite photovoltaic assembly further comprises a first charge transport layer, a second charge transport layer, a buffer layer, an electrode layer and an outer protective layer, and the conductive Low-E glass, the first charge transport layer, the perovskite layer, the second charge transport layer, the buffer layer, the electrode layer and the outer protective layer are arranged in a stack composite manner.

6. The Low-E glass based perovskite photovoltaic module according to claim 1, wherein, When a self-cleaning glass structure is arranged on one side of the perovskite photovoltaic assembly, a hollow layer is arranged between the perovskite photovoltaic assembly and the self-cleaning glass structure, and the hollow layer is filled with an inert gas, wherein the self-cleaning glass structure is located on the side of the perovskite photovoltaic assembly away from the conductive Low-E glass.

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