Anti-static semiconductor structure

Abstract

The utility model relates to the technical field of semiconductors, and particularly discloses an anti-static semiconductor structure which comprises a protection mechanism. The protection mechanism comprises an upper shell and a lower shell which are detachably connected, the upper shell and the lower shell are fixed through bolts, the inner side wall of the upper shell and the inner side wall of the lower shell are each provided with a first insulating rubber mat layer, and the inner side wall of each first insulating rubber mat layer is provided with an electromagnetic shielding layer; a fixing frame is arranged between the interior of the upper shell and the interior of the lower shell, a semiconductor body is installed in the fixing frame, a metal grid conducting strip is pasted to the top of the semiconductor body, and the outer surface of the metal grid conducting strip and the outer surface of the semiconductor body are coated with an anti-static coating. The static electricity generated by the semiconductor body can be comprehensively collected and rapidly conducted, the static electricity generated by the semiconductor can be eliminated, the electromagnetic compatibility of the whole device is enhanced, and the device has the effect of comprehensively protecting the semiconductor from electrostatic interference.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor technology, and specifically discloses an anti-static semiconductor structure. Background Technology

[0002] Semiconductors are materials whose conductivity at room temperature is between that of conductors and insulators. Semiconductors are widely used in radios, televisions, and temperature measurement. Static electricity exists in nature at all times. When static charge accumulated in the external environment or inside the chip flows into or out of the chip through the chip's pins, the instantaneous current or voltage generated can damage the integrated circuit and cause the chip to malfunction.

[0003] Chinese Patent No. CN213424988U discloses an antistatic semiconductor structure, including a shell, an inner box disposed on the inner wall of the shell, a semiconductor disposed on the inner wall of the inner box, and multiple pins disposed on the bottom of the shell, the pins being fixedly connected to the semiconductor. The inner box is cylindrical, and multiple electrostatic balls are disposed at both ends and the bottom of the semiconductor, the electrostatic balls being fixedly connected to the inner box. This invention improves the lifespan of the semiconductor by enclosing it within the inner box. By placing the electrostatic balls on the inner box in contact with the semiconductor, when static electricity is generated on the semiconductor, the electrostatic balls can discharge the static electricity using conductive pillars, thus achieving antistatic protection for the semiconductor. The antistatic coating on the inner wall of the inner box effectively suppresses the generation of static electricity on both the semiconductor and the inner box. The insulating pad on the inner wall of the shell further enhances the antistatic capability of the semiconductor. 。

[0004] In actual use, the aforementioned device only sets electrostatic balls at both ends and the bottom of the semiconductor. Static electricity generated on other parts such as the sides of the semiconductor is difficult to capture, resulting in blind spots in the static electricity collection area and an inability to cope with static electricity generation in all aspects. Furthermore, in complex electromagnetic environments, the semiconductor itself not only generates static electricity due to its internal operation, but may also accumulate charge by inducing external electromagnetic signals. The device lacks effective countermeasures against electrostatic induction in complex electromagnetic environments and cannot fully protect the semiconductor from electrostatic interference. Utility Model Content

[0005] This invention proposes an anti-static semiconductor structure that can comprehensively collect and quickly conduct static electricity generated by the semiconductor itself. It not only eliminates the static electricity generated by the semiconductor itself, but also enhances the electromagnetic compatibility of the entire device, providing comprehensive protection for the semiconductor from electrostatic interference.

[0006] This invention is implemented as follows: an antistatic semiconductor structure includes a protective mechanism. The protective mechanism includes a detachably connected upper shell and a lower shell, which are fixed together by bolts. A first insulating pad layer is provided on the inner sidewall of both the upper and lower shells, and an electromagnetic shielding layer is provided on the inner sidewall of the first insulating pad layer. A fixing frame is provided between the interiors of the upper and lower shells. A semiconductor body is installed inside the fixing frame. A metal mesh conductive sheet is attached to the top of the semiconductor body. The metal mesh conductive sheet and the outer surface of the semiconductor body are covered with an antistatic coating. A second insulating pad layer is provided on the outer side of the antistatic coating. A second insulating pad layer is also provided on the top and all four sides of the antistatic coating. A U-shaped fixing plate is fixedly installed at the bottom of the lower shell. A third insulating pad layer is fixedly installed on the bottom surface inside the fixing plate. An antistatic elimination mechanism is provided inside the fixing plate.

[0007] As a preferred embodiment of the antistatic semiconductor structure of this utility model, the static elimination mechanism includes two metal conductive blocks that are distributed in a group and fixedly installed on the upper surface of the third insulating pad layer. An insulating tube is fixedly installed between the two metal conductive blocks. Spring electrodes and copper electrodes, respectively fixedly connected to the two metal conductive blocks, are provided at both ends inside the insulating tube. A rollable metal ball is provided inside the insulating tube.

[0008] As a preferred embodiment of the antistatic semiconductor structure of this utility model, the outer wall of the metal mesh conductive sheet is connected to a plurality of parallel first wires, and the other end of the first wires extends to the outside of the lower housing and is fixedly connected to the metal conductive block located on the left side.

[0009] As a preferred embodiment of the antistatic semiconductor structure of this utility model, the electromagnetic shielding layer is made of aluminum-magnesium alloy, and multiple parallel second wires are fixedly connected to the outer wall of the electromagnetic shielding layer, with the other end of the second wires fixedly connected to a metal conductive block located on the right side.

[0010] As a preferred embodiment of the antistatic semiconductor structure of this utility model, a high thermal conductivity insulating layer is fixedly installed on the top of the electromagnetic shielding layer inside the lower housing, and a plurality of heat-conducting rods are fixedly connected to the bottom of the high thermal conductivity insulating layer, which sequentially penetrate the electromagnetic shielding layer, the first insulating pad layer and the lower housing. The other end of all the heat-conducting rods is fixedly connected to a finned heat sink fixedly installed at the bottom of the lower housing.

[0011] As a preferred embodiment of the antistatic semiconductor structure of this utility model, the bottom of the fixing frame and the antistatic coating abut against the high thermal conductivity insulating layer, and the left and right side walls and the top of the fixing frame abut against the electromagnetic shielding layer.

[0012] As a preferred embodiment of the antistatic semiconductor structure of this utility model, the pins of the semiconductor body sequentially penetrate the inner wall of the fixing frame and the inner wall of the upper housing and extend to the outside of the upper housing.

[0013] The beneficial effects of this utility model are:

[0014] 1. The metal mesh conductive sheet, in conjunction with the first wire, can comprehensively collect and quickly conduct static electricity generated by the semiconductor body, avoiding electrostatic discharge caused by charge accumulation. This effectively prevents static electricity from damaging the precision circuits inside the semiconductor and reduces semiconductor malfunctions caused by electrostatic interference.

[0015] 2. The electromagnetic shielding layer blocks external electromagnetic interference, ensuring that the semiconductor works normally in a complex electromagnetic environment. At the same time, it conducts the induced static electricity to the metal conductive block on the right. The static electricity elimination mechanism uses the potential difference between the two metal conductive blocks and the rolling of the metal ball in the insulating tube to neutralize the static charge from the metal mesh conductive sheet and the electromagnetic shielding layer. This not only eliminates the static electricity generated by the semiconductor itself, but also enhances the electromagnetic compatibility of the entire device, providing comprehensive protection for the semiconductor from electrostatic interference.

[0016] 3. The high thermal conductivity insulation layer, heat-conducting rod and finned heat sink constitute an efficient heat dissipation system, which can quickly and effectively dissipate the heat on the semiconductor body, realize heat dissipation of the semiconductor body, and ensure its stable operation at a suitable temperature. Attached Figure Description

[0017] To more clearly illustrate the specific embodiments of this utility model or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. In all the drawings, similar elements or parts are generally identified by similar reference numerals. In the drawings, the elements or parts are not necessarily drawn to scale.

[0018] Figure 1 This is an overall structural diagram of an anti-static semiconductor structure according to the present invention.

[0019] Figure 2 This is a cross-sectional view of an anti-static semiconductor structure according to the present invention.

[0020] Figure 3 This is a top view of the fixing frame of this utility model;

[0021] Figure 4 This is a top view of the metal mesh conductive sheet of this utility model.

[0022] The markings in the diagram are as follows: 1. Upper shell; 101. First insulating pad layer; 102. Electromagnetic shielding layer; 2. Lower shell; 3. Fixing frame; 4. Semiconductor body; 401. Metal mesh conductive sheet; 402. Antistatic coating; 403. Second insulating pad layer; 5. High thermal conductivity insulating layer; 501. Heat-conducting rod; 502. Finned heat sink; 6. Fixing plate; 601. Third insulating pad layer; 7. Metal conductive block; 701. Insulating tube; 7011. Spring electrode; 7012. Copper electrode; 702. Metal sphere; 8. First wire; 9. Second wire. Detailed Implementation

[0023] The present invention will be further described below with reference to the accompanying drawings and specific embodiments to aid in understanding its content. Unless otherwise specified, the methods used in this invention are conventional methods; the raw materials and apparatus used, unless otherwise specified, are conventional commercially available products.

[0024] Please see Figure 1-4 An antistatic semiconductor structure includes a protective mechanism. The protective mechanism includes a detachably connected upper housing 1 and a lower housing 2, which are fixed together by bolts. The inner sidewalls of both the upper housing 1 and the lower housing 2 are provided with a first insulating pad layer 101, and the inner sidewall of the first insulating pad layer 101 is provided with an electromagnetic shielding layer 102. A fixing frame 3 is provided between the interiors of the upper housing 1 and the lower housing 2. A semiconductor body 4 is installed inside the fixing frame 3. A metal mesh conductive sheet 401 is attached to the top of the semiconductor body 4. The metal mesh conductive sheet 401 and the outer surface of the semiconductor body 4 are covered with an antistatic coating 402. A second insulating pad layer 403 is provided on the outer side of the antistatic coating 402. A U-shaped fixing plate 6 is fixedly installed at the bottom of the lower housing 2. A third insulating pad layer 601 is fixedly installed on the bottom surface inside the fixing plate 6. An antistatic elimination mechanism is provided inside the fixing plate 6.

[0025] In this embodiment: the metal mesh conductive sheet 401 attached to the outside of the semiconductor body 4 can comprehensively collect and quickly conduct the electrostatic charge generated by the semiconductor body 4 during operation or under external influence. Through multiple parallel first wires 8, the collected electrostatic charge is conducted to the metal conductive block 7 located on the left side, avoiding the accumulation of charge on the surface of the semiconductor body 4. The electromagnetic shielding layer 102 can effectively block external electromagnetic interference from entering the interior and affecting the operation of the semiconductor body 4. At the same time, when the electromagnetic shielding layer 102 generates static electricity due to the surrounding environment, the static electricity is conducted to the metal conductive block 7 located on the right side of the lower housing 2 through multiple parallel second wires 9. The static electricity elimination mechanism neutralizes the electrostatic charge from the metal mesh conductive sheet 401 and the electromagnetic shielding layer 102, thereby achieving the purpose of eliminating static electricity.

[0026] The heat generated by the semiconductor body 4 during operation can be quickly and effectively dissipated through the synergistic effect of the high thermal conductivity insulating layer 5, the heat-conducting rod 501, and the finned heat sink 502, thereby achieving heat dissipation of the semiconductor body 4 and ensuring its stable operation at a suitable temperature.

[0027] As a technical optimization of this utility model, the static elimination mechanism includes two metal conductive blocks 7 that are distributed in a group and fixedly installed on the upper surface of the third insulating rubber pad layer 601. An insulating tube 701 is fixedly installed between the two metal conductive blocks 7. Spring electrodes 7011 and copper electrodes 7012, which are respectively fixedly connected to the two metal conductive blocks 7, are provided at both ends inside the insulating tube 701. A rollable metal ball 702 is provided inside the insulating tube 701.

[0028] In this embodiment: the insulating tube 701 is made of insulating material, and its function is to provide a relatively independent space for the internal electrodes and the metal sphere 702, while avoiding direct conduction between the two metal conductive blocks 7, ensuring the controllability of the static elimination process. The spring electrode 7011 has a certain elasticity and can adapt to the rolling and collision of the metal sphere 702 to a certain extent, while ensuring good contact with the metal sphere 702. The copper electrode 7012 utilizes the good conductivity of copper to ensure that static electricity can be smoothly conducted. When the metal conductive block 7 receives static charge, an electric field will be formed in the insulating tube 701. Since the spring electrode 7011 and the copper electrode 7012 are respectively connected to metal conductive blocks 7 with different potentials, the electric field in the insulating tube 701 is non-uniform. Under the action of this non-uniform electric field, the metal sphere 702 rolls and continuously alternately contacts the spring electrode 7011 and the copper electrode 7012, thereby promoting the conduction and neutralization of static charge between the two metal conductive blocks 7, achieving the purpose of eliminating static electricity.

[0029] As a technical optimization of this utility model, the outer wall of the metal mesh conductive sheet 401 is connected to multiple parallel first wires 8, and the other end of the first wires 8 extends to the outside of the lower housing 2 and is fixedly connected to the metal conductive block 7 located on the left side.

[0030] In this embodiment, the static charge on the surface of the semiconductor body 4 is conducted to the metal conductive block 7 through the metal mesh conductive sheet 401 and the first wire 8.

[0031] As a technical optimization of this utility model, the electromagnetic shielding layer 102 is made of aluminum-magnesium alloy, and multiple parallel second wires 9 are fixedly connected to the outer wall of the electromagnetic shielding layer 102. The other end of the second wires 9 is fixedly connected to the metal conductive block 7 located on the right side.

[0032] In this embodiment, the static charge on the surface of the electromagnetic shielding layer 102 is conducted to the metal conductive block 7 through the second wire 9.

[0033] As a technical optimization of this utility model, a high thermal conductivity insulation layer 5 is fixedly installed on the top of the electromagnetic shielding layer 102 inside the lower housing 2, and a plurality of heat-conducting rods 501 are fixedly connected to the bottom of the high thermal conductivity insulation layer 5, which pass through the electromagnetic shielding layer 102, the first insulating pad layer 101 and the lower housing 2 in sequence. The other end of all the heat-conducting rods 501 is fixedly connected to a finned heat sink 502 fixedly installed at the bottom of the lower housing 2.

[0034] In this embodiment: the lower housing 2 can be made of high-strength, lightweight engineering plastics or metal materials, such as aluminum alloy; the electromagnetic shielding layer 102 can be made of conductive rubber, metal mesh or other materials with electromagnetic shielding properties; the high thermal conductivity insulation layer 5 can be made of ceramic matrix composite material or thermally conductive silicone sheet; the heat-conducting rod 501 is made of high-purity copper or aluminum rod; and the finned heat sink 502 can be made of aluminum fins. Through the synergistic effect of the high thermal conductivity insulation layer 5, the heat-conducting rod 501 and the finned heat sink 502, the heat on the semiconductor body 4 can be dissipated quickly and effectively.

[0035] As a technical optimization of this utility model, the bottom of the fixing frame 3 and the antistatic coating 402 abut against the high thermal conductivity insulation layer 5, and the left and right side walls and the top of the fixing frame 3 abut against the electromagnetic shielding layer 102.

[0036] In this embodiment, by making the fixing frame 3 abut against the antistatic coating 402 and the high thermal conductivity insulation layer 5, it is easy to tightly seal the fixing frame 3.

[0037] As a technical optimization of this utility model, the pins of the semiconductor body 4 pass through the inner wall of the fixing frame 3 and the inner wall of the upper shell 1 in sequence and extend to the outside of the upper shell 1.

[0038] In this embodiment, the semiconductor body 4 is connected to an external device via its pins.

[0039] The working principle and usage process of this utility model are as follows: During use, the metal mesh conductive sheet 401 attached to the outside of the semiconductor body 4 can comprehensively collect and quickly conduct the static charge generated by the semiconductor body 4 during operation or under external influence. The antistatic coating 402 (epoxy resin) reduces static electricity generation on the surface of the semiconductor body 4. The metal mesh conductive sheet 401, through multiple parallel first wires 8, conducts the collected static charge to the metal conductive block 7 located on the left side, preventing charge accumulation on the surface of the semiconductor body 4. Furthermore, the electromagnetic shielding layer 102 on the inner sidewalls of the upper shell 1 and lower shell 2, made of aluminum-magnesium alloy, effectively blocks external electromagnetic interference from entering and affecting the operation of the semiconductor body 4. Simultaneously, when the electromagnetic shielding layer 102 generates static electricity due to the surrounding environment, it conducts the static charge through multiple parallel second wires 9... The static electricity is conducted to the metal conductive block 7 located on the right side outside the lower housing 2. Due to the different static electricity accumulation of the metal mesh conductive sheet 401 and the electromagnetic shielding layer 102, there is a potential difference between the left and right metal conductive blocks 7 connected to them. This potential difference causes an electric field to be formed inside the insulating tube 701 fixedly installed between the two metal conductive blocks 7. The metal ball 702 inside the insulating tube 701 begins to roll under the action of the electric field force. During the rolling process, the metal ball 702 alternately contacts the spring electrode 7011 and the copper electrode 7012 fixedly connected to the metal conductive block 7 at both ends inside the insulating tube 701, respectively. This realizes the conduction of charge between the two metal conductive blocks 7, thereby neutralizing the static charge from the metal mesh conductive sheet 401 and the electromagnetic shielding layer 102, achieving the purpose of eliminating static electricity.

[0040] The heat generated by the semiconductor body 4 during operation is first absorbed by the high thermal conductivity insulating layer 5. Due to its excellent thermal conductivity, the high thermal conductivity insulating layer 5 can quickly transfer heat from the semiconductor body 4 while ensuring electrical insulation and preventing short circuits. Multiple heat-conducting rods 501 are made of materials with high thermal conductivity to ensure efficient heat transfer to the finned heat sink 502. The finned heat sink 502 has a large heat dissipation area and can fully exchange heat with the surrounding air, dissipating the heat transferred from the semiconductor body 4 into the surrounding environment, thus achieving heat dissipation for the semiconductor body 4 and ensuring its stable operation at a suitable temperature.

[0041] In the description of this utility model, it should be understood that the terms "left", "right", "up", "down", "top", "bottom", "front", "back", "inner", "outer", "back", "middle", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.

[0042] However, the above description is only a specific embodiment of this utility model and should not be construed as limiting the scope of implementation of this utility model. Therefore, any substitution of equivalent components or equivalent changes and modifications made in accordance with the scope of protection of this utility model should still fall within the scope of the claims of this utility model.

Claims

1. An antistatic semiconductor structure, characterized by: The application relates to a protective mechanism, which comprises detachably connected upper and lower shells (1 and 2) fixed by bolts, the inner side walls of the upper and lower shells (1 and 2) are provided with first insulating rubber pad layers (101), the inner side walls of the first insulating rubber pad layers (101) are provided with electromagnetic shielding layers (102), a fixed frame (3) is arranged between the interiors of the upper and lower shells (1 and 2), a semiconductor body (4) is arranged in the interior of the fixed frame (3), a metal mesh conductive sheet (401) is attached to the top of the semiconductor body (4), the metal mesh conductive sheet (401) and the outer surface of the semiconductor body (4) are coated with an anti-static coating (402), the outer side of the anti-static coating (402) is provided with a second insulating rubber pad layer (403), a fixed plate (6) in the shape of "U" is fixedly arranged at the bottom of the lower shell (2), a third insulating rubber pad layer (601) is fixedly arranged at the bottom end face in the interior of the fixed plate (6), and an electrostatic elimination mechanism is arranged in the interior of the fixed plate (6).

2. The antistatic semiconductor structure according to claim 1, characterized in that: The electrostatic elimination mechanism comprises two metal conductive blocks (7) fixedly arranged on the upper end faces of the third insulating rubber pad layer (601) in groups, an insulating tube (701) is fixedly arranged between the two metal conductive blocks (7), spring electrodes (7011) and copper electrodes (7012) fixedly connected with the two metal conductive blocks (7) are arranged at the two ends in the interior of the insulating tube (701), and a metal ball (702) capable of rolling is arranged in the interior of the insulating tube (701).

3. The antistatic semiconductor structure of claim 2, wherein: The outer wall of the metal mesh conductive sheet (401) is connected with a plurality of parallel first wires (8), the other ends of the first wires (8) extend to the outside of the lower shell (2) and are fixedly connected with the metal conductive block (7) on the left side.

4. The antistatic semiconductor structure of claim 1, wherein: The electromagnetic shielding layer (102) is made of aluminum-magnesium alloy, a plurality of parallel second wires (9) are fixedly connected with the outer side wall of the electromagnetic shielding layer (102), and the other ends of the second wires (9) are fixedly connected with the metal conductive block (7) on the right side.

5. The antistatic semiconductor structure of claim 4, wherein: A high-thermal-conductivity insulating layer (5) is fixedly arranged at the top of the electromagnetic shielding layer (102) in the lower shell (2), a plurality of heat-conducting rods (501) are fixedly connected with the bottom of the high-thermal-conductivity insulating layer (5) and sequentially penetrate through the electromagnetic shielding layer (102), the first insulating rubber pad layer (101) and the lower shell (2), and the other ends of all the heat-conducting rods (501) are fixedly connected with a fin heat sink (502) fixedly arranged at the bottom of the lower shell (2).

6. The anti-static semiconductor structure of claim 1, wherein: The bottom of the fixed frame (3), the anti-static coating (402) and the high-thermal-conductivity insulating layer (5) are in abutment, the left and right side walls and the top of the fixed frame (3) are in abutment with the electromagnetic shielding layer (102).

7. The anti-static semiconductor structure of claim 1, wherein: The pins of the semiconductor body (4) sequentially penetrate through the inner side walls of the fixed frame (3) and the upper shell (1) and extend to the outside of the upper shell (1).

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