Spiral phosphorus-antimony co-doping device
By using a spiral phosphorus-antimony co-doping device and a magnetic transmission system driven by a servo motor, efficient dopant delivery in the single-crystal silicon growth furnace was achieved, solving the problems of low doping efficiency and gas leakage, and ensuring the uniformity of resistivity of the single-crystal silicon rod.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- HUAYAO PHOTOELECTRIC TECH CO LTD
- Filing Date
- 2025-04-24
- Publication Date
- 2026-04-17
AI Technical Summary
In the existing technology, the doping operation of single crystal silicon growth furnace is inefficient and prone to gas leakage, making it difficult to achieve uniform resistivity of single crystal silicon rods.
A spiral phosphorus-antimony co-doping device is adopted, which uses a servo motor to drive the outer magnetic sleeve to drive the inner magnetic sleeve to rotate synchronously. The dopant is delivered to the single crystal silicon furnace through the spiral shaft, ensuring the precise addition and sealed delivery of the dopant.
It improves the efficiency of doping operations, prevents gas leakage from the single crystal silicon growth furnace, and achieves uniformity of resistivity in single crystal silicon rods.
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Figure CN224133242U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of single-crystal silicon technology, and in particular to a spiral phosphorus-antimony co-doping device. Background Technology
[0002] Currently, N-type silicon rods and wafers used in photovoltaic cells are mainly phosphorus-doped monocrystalline silicon. Phosphorus has a segregation coefficient of 0.35, which leads to a large difference in resistivity between the beginning and end of the N-type monocrystalline silicon rod. Due to the segregation limitation of the dopant phosphorus, a narrower resistivity range is generally achieved by shortening the rod length, which increases the actual crystal pulling cost. However, by controlling the concentration of antimony (segregation coefficient 0.023) in the monocrystalline silicon rod, monocrystalline silicon rods with excellent resistivity range and resistivity concentration can be obtained, and resistivity uniformity can be achieved while maintaining the rod length or even at longer rod lengths.
[0003] Due to the difference in evaporation rates between antimony and phosphorus in the phosphorus co-doping process, antimony evaporates faster. Therefore, when the furnace is adjusted and released 2-3 times, the antimony alloy needs to be added into the furnace within 10 minutes before the temperature adjustment. Thus, it is necessary to replenish the antimony alloy.
[0004] Current doping methods mostly involve manual doping, where the dopant is placed in a spoon-shaped container and manually pushed into a quartz crucible inside the single-crystal silicon growth furnace. This method has low operating efficiency, makes it difficult to ensure the precise doping amount, and the reaction gases in the single-crystal silicon growth furnace are prone to leaking out during the doping operation. Utility Model Content
[0005] The technical problem to be solved by this utility model is: in order to overcome the shortcomings of the prior art, this utility model provides a spiral phosphorus-antimony co-doping device that can improve working efficiency and effectively prevent gas leakage from the single crystal silicon growth furnace.
[0006] The technical solution adopted by this utility model to solve its technical problem is: a spiral phosphorus-antimony co-doping device, which has a cylindrical casing, a feed pipe fixedly connected to the upper part of the outer wall of one end of the casing, and a discharge pipe fixedly connected to the lower part of the outer wall of the other end of the casing. A spiral shaft is rotatably installed inside the casing. The spiral shaft is provided with continuous spiral blades. An outer magnetic sleeve is rotatably provided on the outer circumferential surface of the casing located outside the feed pipe. An inner magnetic sleeve is provided on the spiral shaft corresponding to the position of the outer magnetic sleeve. The outer magnetic sleeve and the inner magnetic sleeve are magnetically attracted. The inner magnetic sleeve, which rotates synchronously with the outer magnetic sleeve, drives the spiral shaft to rotate and convey the material entering through the feed pipe to the discharge pipe.
[0007] The outer circumferential surface of the housing is provided with an annular groove, and the center of the inner circumferential wall of the outer magnetic sleeve has an annular protrusion that fits with the annular groove to limit the movement of the outer magnetic sleeve.
[0008] A motor mounting plate is fixed on the outer casing of the outer magnetic sleeve. A servo motor is fixed on the motor mounting plate. A drive gear is fixed on the motor shaft of the servo motor. A passive gear that meshes with the drive gear is fixed on the outer periphery of the outer magnetic sleeve.
[0009] The housing has a rear bearing at one end that supports the non-powered end of the screw shaft, and two spaced-apart front bearings at the other end that support the powered end of the screw shaft. The inner magnetic sleeve is fitted between the two front bearings.
[0010] The feed pipe is equipped with a feed ball valve, and the discharge pipe is equipped with a discharge ball valve.
[0011] The beneficial effects of this utility model are as follows: This utility model adopts a spiral conveying method to transport the dopant into the single crystal silicon furnace, which improves the efficiency of the doping operation. Structurally, the rotation of the spiral shaft is achieved by the outer magnetic sleeve driving the inner magnetic sleeve to rotate synchronously through magnetic attraction. Since the inner magnetic sleeve is set in a sealed housing, the gas in the single crystal furnace is not easy to leak from the transmission end of the spiral shaft during the doping process, thereby ensuring the doping effect and achieving uniformity of resistivity of the single crystal silicon rod. Attached Figure Description
[0012] The present invention will be further described below with reference to the accompanying drawings and embodiments.
[0013] Figure 1 This is a three-dimensional structural schematic diagram of the present invention.
[0014] Figure 2 This is a cross-sectional view of the main view of this utility model.
[0015] Figure 3 This is a partially enlarged structural schematic diagram of the spiral shaft transmission end described in this utility model.
[0016] Figure 4 This is a partial schematic diagram of the housing and outer magnetic sleeve mating structure described in this utility model.
[0017] In the diagram: 1. Housing, 1-1. Annular groove, 2. Feed pipe, 3. Discharge pipe, 4. Spiral shaft, 5. Spiral blade, 6. Outer magnetic sleeve, 6-1. Annular protrusion, 7. Inner magnetic sleeve, 8. Motor mounting plate, 9. Servo motor, 10. Drive gear, 11. Driven gear, 12. Rear bearing, 13. Front bearing, 14. Feed ball valve, 15. Discharge ball valve. Detailed Implementation
[0018] The present invention will now be described in further detail with reference to the accompanying drawings. These drawings are simplified schematic diagrams, illustrating only the basic structure of the present invention, and therefore only show the components relevant to the present invention.
[0019] like Figures 1-4 The spiral phosphorus-antimony co-doping device shown includes a cylindrical housing 1 closed at both ends. A spiral shaft 4 is rotatably mounted inside the housing. Continuous spiral blades 5 are fixedly connected to the spiral shaft 4. A feed pipe 2 is fixedly connected to the upper part of the outer wall at the left end of the housing 1, and a discharge pipe 3 is fixedly connected to the lower part of the outer wall at the right end of the housing 1. A feed ball valve 14 for controlling the feeding is installed on the feed pipe 2, and a discharge ball valve 15 for controlling the discharge is installed on the discharge pipe 3.
[0020] A rear bearing 12, which is supported on the non-power end of the screw shaft 4, is installed in the housing 1 located on one side of the discharge pipe 3. Two front bearings 13, which are spaced apart and supported on the power end of the screw shaft 4, are installed in the housing 1 located on one side of the feed pipe 2.
[0021] An inner magnetic sleeve 7, which is fixed to the spiral shaft 4, is provided between the two front bearings 13. An outer magnetic sleeve 6 is rotatably provided on the outer circumferential surface of the housing 1 corresponding to the position of the inner magnetic sleeve 7. The outer magnetic sleeve 6 and the inner magnetic sleeve 7 are magnetically attracted to each other.
[0022] To limit the axial movement of the outer magnetic sleeve 6, an annular groove 1-1 is provided on the outer circumferential surface of the housing 1, and an annular protrusion 6-1 is provided at the center of the inner circumferential wall of the outer magnetic sleeve 6 to limit the movement of the outer magnetic sleeve 6 by clearance fitting with the annular groove 1-1.
[0023] A motor mounting plate 8 is fixed on the outer casing 1 of the outer magnetic sleeve 6. A servo motor 9 is fixed on the motor mounting plate 8. A drive gear 10 is fixed on the motor shaft of the servo motor 9. A passive gear 11 that meshes with the drive gear 10 is fixed on the outer periphery of the outer magnetic sleeve 6.
[0024] When the doping device is not in use, both the feed ball valve 14 and the discharge ball valve 15 are closed. When doping is required in the crucible containing molten silicon in the main chamber of the single crystal furnace, the feed ball valve 14 is opened, and the dopant is added from the feed pipe 2 into the housing 1. After that, the feed ball valve 14 is closed, the discharge ball valve 15 is opened, and the servo motor 9 is started. Through the meshing of the drive gear 10 and the driven gear 11, the outer magnetic sleeve 6 is driven to rotate. Since the outer magnetic sleeve 6 and the inner magnetic sleeve 7 are magnetically attracted, the inner magnetic sleeve 7 rotates synchronously with the outer magnetic sleeve 6, thereby driving the rotation of the spiral shaft 4. Using the pushing action of the spiral blades 5, the dopant entering through the feed pipe 2 is transported to the discharge pipe 3 and discharged into the crucible. After the dopant is added, the servo motor 9 and the discharge ball valve 15 are closed, completing the dopant addition operation.
[0025] This invention employs a spiral conveying method to transport the dopant into the single-crystal silicon furnace, improving the efficiency of the doping operation. Structurally, the servo motor 9 meshes with the driven gear 11 through the active gear 10, causing the magnetically attracted outer magnetic sleeve 6 to drive the inner magnetic sleeve 7 to rotate synchronously, thereby realizing the rotation of the spiral shaft 4. Since the inner magnetic sleeve 7 is located inside the sealed housing 1, the gas inside the single-crystal furnace is less likely to leak from the transmission end of the spiral shaft 4 during the doping process, thus ensuring the doping effect and achieving uniformity of the resistivity of the single-crystal silicon rod.
[0026] Based on the above-described preferred embodiments of this utility model, and through the foregoing description, those skilled in the art can make various changes and modifications without departing from the technical concept of this utility model. The technical scope of this utility model is not limited to the contents of the specification, but must be determined according to the scope of the claims.
Claims
1. A spiral phosphorus-antimony co-doping device, comprising a cylindrical casing (1), a feed pipe (2) fixedly connected to the upper part of the outer wall of one end of the casing (1), and a discharge pipe (3) fixedly connected to the lower part of the outer wall of the other end of the casing (1), characterized in that: A spiral shaft (4) is rotatably installed inside the housing (1). The spiral shaft (4) is provided with continuous spiral blades (5). An outer magnetic sleeve (6) is rotatably provided on the outer circumferential surface of the housing (1) located outside the feed pipe (2). An inner magnetic sleeve (7) is provided on the spiral shaft (4) corresponding to the position of the outer magnetic sleeve (6). The outer magnetic sleeve (6) and the inner magnetic sleeve (7) are magnetically attracted. The inner magnetic sleeve (7) rotates synchronously with the outer magnetic sleeve (6), driving the spiral shaft (4) to rotate and thus conveying the material entering the feed pipe (2) to the discharge pipe (3).
2. The spiral-type phosphorus-antimony co-doping device as described in claim 1, characterized in that: The outer circumferential surface of the housing (1) is provided with an annular groove (1-1), and the center of the inner circumferential wall of the outer magnetic sleeve (6) has an annular protrusion (6-1) that fits with the annular groove (1-1) to limit the outer magnetic sleeve (6).
3. The spiral phosphorus-antimony co-doping device as described in claim 2, characterized in that: A motor mounting plate (8) is fixed on the outer casing (1) of the outer magnetic sleeve (6). A servo motor (9) is fixed on the motor mounting plate (8). A drive gear (10) is fixed on the motor shaft of the servo motor (9). A passive gear (11) that meshes with the drive gear (10) is fixed on the outer periphery of the outer magnetic sleeve (6).
4. The spiral phosphorus-antimony co-doping device as described in claim 3, characterized in that: The housing (1) has a rear bearing (12) at one end that supports the non-power end of the spiral shaft (4), and two front bearings (13) at the other end that support the power end of the spiral shaft (4). The inner magnetic sleeve (7) is fitted between the two front bearings (13).
5. The spiral-type phosphorus-antimony co-doping device as described in claim 1, characterized in that: The feed pipe (2) is equipped with a feed ball valve (14), and the discharge pipe (3) is equipped with a discharge ball valve (15).