Multi-channel parallel batch aging test device for special memory cards
By employing a multi-channel parallel architecture and distributed power management, the shortcomings of existing memory card testing devices in terms of channel density, power stability, and signal integrity are addressed, enabling efficient and reliable batch aging testing of memory cards and meeting the testing requirements of next-generation industrial-grade memory cards.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- CHONGQING AEROSPACE ROCKET ELECTRONIC TECH CO LTD
- Filing Date
- 2025-05-12
- Publication Date
- 2026-04-17
AI Technical Summary
Existing memory card testing equipment cannot meet the high-concurrency, high-speed transmission, and high-precision testing requirements of next-generation industrial-grade memory cards in terms of channel density, power stability, protocol conversion efficiency, and signal integrity. It is particularly deficient in cascading depth and power management.
It adopts a multi-channel parallel architecture, distributed power management, modular interface conversion array and integrated transient voltage suppression network, combined with a central control unit and redundant power supply circuits to achieve high-density parallel testing and real-time monitoring.
It breaks through the channel density limitation, ensures power supply stability and high-speed data transmission integrity, improves testing efficiency and accuracy, has flexible scalability and anomaly response capabilities, and meets the full life cycle testing requirements of industrial-grade memory cards.
Smart Images

Figure CN224137910U_ABST
Abstract
Description
Technical Field
[0001] This utility model belongs to the field of experimental tooling and relates to a multi-channel parallel dedicated memory card batch aging test device. Background Technology
[0002] The current field of industrial-grade memory card testing faces significant technical bottlenecks. Traditional testing equipment is limited by the fast bus architecture design for interconnecting peripheral components, resulting in a single-machine channel density generally below 16 channels, which cannot meet the high concurrency requirements of more than 50 channels in batch testing scenarios. Existing power management systems use a centralized power supply topology, with dynamic load fluctuations exceeding 3%, leading to memory chip test yield fluctuations of 15% to 20%. The protocol conversion architecture is inefficient; in traditional solutions, the protocol conversion latency between the PCI-E bus and the memory card Express interface is as high as 2.3 seconds, making it difficult to adapt to the 0.5-second timing requirement of the fourth generation of the non-volatile memory fast transfer standard specification.
[0003] Cascaded multi-card architectures present a trade-off between cascading depth and signal integrity. When the number of cascaded layers exceeds six, the bit error rate (BER) jumps dramatically from 10^-12 to 10^-7. Centralized power supply architectures lack real-time channel-level voltage monitoring, and overcurrent protection response delays reach 50 milliseconds, failing to meet the sub-nanosecond protection requirements of fifth-generation double data rate (DFR) memory. Existing test data acquisition systems employ a single-machine storage architecture; when the number of channels exceeds 32, the data packet loss rate surges from 0.01% to 3.2%, severely limiting the reliability of test results.
[0004] The Industrial Equipment Upgrade Guidelines explicitly state that testing equipment must achieve Level 4 Digital Maturity Standard by 2027, requiring real-time data acquisition and anomaly self-healing capabilities. With 3D stacked flash memory technology exceeding 500-layer stacking density, memory card testing needs to support ±1.5% voltage accuracy and ±0.5 picosecond timing control accuracy, posing new challenges to the hardware architecture of testing devices. Existing technologies cannot meet the full lifecycle aging testing requirements of next-generation industrial-grade memory cards in terms of core indicators such as channel scalability, power stability, and protocol conversion efficiency, necessitating the development of new devices with high-density parallel testing capabilities. Utility Model Content
[0005] In view of this, the purpose of this utility model is to provide a multi-channel parallel dedicated memory card batch aging test device to solve the problem of aging test of large batches of dedicated memory cards.
[0006] To achieve the above objectives, this utility model provides the following technical solution:
[0007] A multi-channel parallel dedicated memory card batch aging test device includes:
[0008] The supporting frame has 50 independent slots and an electromagnetic compatibility (EMC) shielding structure physically connected to them;
[0009] An interface conversion module array, each of its slots being rigidly connected to a PCI-Eto-Express interface converter that interconnects with peripheral components, wherein the converter has a protocol conversion chip and a hot-swap protection circuit soldered on its board.
[0010] The multi-channel power distribution unit is electrically connected to the external DC regulated power supply via a copper busbar conductor and the main control power interface. The unit and the voltage regulation modules distributed in each slot form a power supply circuit.
[0011] The transient voltage suppression network consists of multiple parallel transient voltage suppression TVS diode arrays soldered to the power input of the converter, and the frame's main input terminal is equipped with a resistor-capacitor filter circuit soldered to the PCB substrate.
[0012] The central control unit is physically connected to each converter via a PCI-E bus metal contact. Its circuit board integrates a pin interconnection structure between a dual-core ARM Cortex-A7 main control processor and a field programmable gate array (FPGA) chip.
[0013] Furthermore, the protocol conversion chip is surface-mounted with a PLX9054 identifier, the hot-swap protection circuit includes a surface-mount self-resetting fuse and an array of electrostatic discharge protection devices soldered to the signal lines, and the copper foil traces of each converter are provided with resistor-capacitor component soldering nodes for differential signal conditioning circuits.
[0014] Furthermore, the multi-channel power distribution unit is provided with two copper interfaces for main and backup 3.3V input terminals, and the output terminals of each channel form a loop topology with the redundant power supply line coupled to the ring inductor.
[0015] Furthermore, the top of the supporting frame is provided with an aluminum alloy finned heat dissipation channel and the temperature control fan is fixed by bolts. The metal probe of the NTC temperature sensor is welded to the bottom of each slot, and the tolerance of the positioning pin hole is ≤0.05mm.
[0016] Furthermore, the central control unit is connected to a multi-channel status register group via a pin header. This register group has 50 independent signal pins corresponding to each slot position.
[0017] Furthermore, the device has a modular expansion interface formed by mechanical milling on the side, which includes a 19-inch standard rack flange connection structure and a 4U height positioning slot.
[0018] Furthermore, each power supply circuit of the multi-channel power distribution unit is connected in series with a miniature circuit breaker, and the overcurrent protection threshold of its current detection point corresponds to the nominal value of the fuse set at 2.5A.
[0019] Furthermore, the EMC shielding structure is a fully enclosed beryllium copper alloy spring sheet, and the shielding layer is pressed against the grounding copper pillar of the frame through conductive foam. The incoming line end protection structure is provided with a parallel array of ceramic gas discharge tubes.
[0020] Furthermore, the central control unit has a SATA 7pin interface on its back, which is connected to the gold finger connector of the storage chip circuit board of the storage array.
[0021] Furthermore, the device has an RJ45 gigabit network interface stamped on the back, and its metal casing is connected to the PCB ground plane through a multi-point star grounding structure.
[0022] The beneficial effects of this utility model are as follows:
[0023] This invention overcomes the channel density limitations of traditional testing devices through structural innovation in a multi-channel parallel architecture and distributed power management, enabling simultaneous testing of batch memory cards while ensuring power supply stability. The physical topology design of the modular interface conversion array effectively eliminates the signal attenuation defects of cascaded architectures, ensuring the integrity of high-speed data transmission. The integrated transient voltage suppression network and redundant power supply loops significantly improve the device's anti-interference capability, avoiding the impact of power fluctuations on test accuracy.
[0024] The device employs a combined mechanical positioning and heat dissipation design, utilizing a precision slot structure and an active temperature control system to ensure consistent testing conditions across all channels within a wide temperature range. Standardized expansion interfaces provide flexible scalability, meeting the needs of testing scenarios of varying scales. The hardware cascade structure of the central control unit and status register enables full-process monitoring of the testing procedure, enhancing the ability to respond instantly to abnormal conditions.
[0025] Compared with existing technologies, this invention provides a systematic improvement in testing efficiency, power quality, signal integrity, and environmental adaptability, offering a reliable aging test solution for industrial-grade memory cards.
[0026] Other advantages, objectives, and features of this invention will be set forth in part in the description which follows, and in part will be apparent to those skilled in the art from the following examination and study, or may be learned from practice of this invention. The objectives and other advantages of this invention can be realized and obtained through the following description. Attached Figure Description
[0027] To make the objectives, technical solutions, and advantages of this utility model clearer, the preferred embodiments of this utility model will be described in detail below with reference to the accompanying drawings, wherein:
[0028] Figure 1 A block diagram illustrating the working principle of the aging test;
[0029] Figure 2 This is a side view of the present invention;
[0030] Figure 3 This is a front view of the present invention. Detailed Implementation
[0031] The following specific examples illustrate the implementation of this utility model. Those skilled in the art can easily understand other advantages and effects of this utility model from the content disclosed in this specification. This utility model can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this utility model. It should be noted that the illustrations provided in the following embodiments are only schematic representations of the basic concept of this utility model. Unless otherwise specified, the following embodiments and features can be combined with each other.
[0032] The accompanying drawings are for illustrative purposes only and are schematic diagrams, not actual pictures. They should not be construed as limiting the present invention. To better illustrate the embodiments of the present invention, some parts in the drawings may be omitted, enlarged, or reduced, and do not represent the actual product dimensions. It is understandable to those skilled in the art that some well-known structures and their descriptions may be omitted in the drawings.
[0033] In the accompanying drawings of this utility model, the same or similar reference numerals correspond to the same or similar components. In the description of this utility model, it should be understood that if terms such as "upper," "lower," "left," "right," "front," and "rear" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, they are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, the terms used to describe positional relationships in the drawings are only for illustrative purposes and should not be construed as limiting this utility model. For those skilled in the art, the specific meaning of the above terms can be understood according to the specific circumstances.
[0034] The dedicated memory card uses an ExpressCard interface, and a bare-board PCI_E to ExpressCard converter serves as the interface board. The PCI_E to ExpressCard converter outputs 3.3V and 3.3VGND signals (3.3V and 3.3VGND are the power supply for the memory card) to an external DC regulated power supply, thus fulfilling the power requirements of the memory card.
[0035] Taking into account factors such as mass production, personnel operation, and temperature chamber size, the aging test fixture integrates 50 PCI_E to Express converters, which can simultaneously power on 50 dedicated memory cards.
[0036] Since the power-on voltage of the memory card is 3.3V, in order to prevent the surge voltage of the DC regulated power supply from impacting the dedicated memory card during startup and shutdown, transient voltage suppressors are connected in parallel on each converter and the power bus cable to prevent power overshoot.
[0037] When testing a dedicated memory card, insert the dedicated memory card into the host computer and run the device's automatic tooling testing software to assess the storage capacity and the correctness of the stored data.
[0038] The principle block diagram of the aging test fixture is shown below. Figure 1 As shown. Figure 2 This is a side view of the present invention; Figure 3 This is a front view of the present invention.
[0039] Example 1: Parallel Testing Implementation of Interface Conversion Module Array
[0040] Step 1: The operator inserts 50 industrial-grade memory cards into the independent slots of the support frame. The slot positioning pin hole tolerance ensures the physical alignment accuracy between the memory card interface and the PCI-E to Express interface converter.
[0041] Step 2: The PLX9054 protocol conversion chip in the interface conversion module array converts the differential signal of the memory card Express interface into the PCI-E bus standard signal through the differential signal conditioning circuit.
[0042] Step 3: The resettable fuse in the hot-swap protection circuit automatically adjusts the current during insertion and removal, and the ESD protection device array eliminates electrostatic interference, ensuring the physical stability of the interface conversion process.
[0043] Step 4: The central control unit synchronously acquires the communication status signals of 50 channels through the PCI-E bus metal contact points to complete the parallel protocol conversion operation of batch memory cards.
[0044] Example 2: Implementation of Multi-channel Power Distribution and Transient Suppression
[0045] Step 1: An external DC regulated power supply inputs 3.3V DC power to the main control power interface through a copper busbar conductor. The main / backup input terminals of the redundant power supply architecture form a ring inductive coupling circuit.
[0046] Step 2: The distributed voltage regulation module splits the total power supply, and the independent LDO regulator of each channel supplies power to the corresponding interface converter through PCB copper foil traces.
[0047] Step 3: The TVS diode array of the transient voltage suppression network absorbs surge current in real time at the power input terminal, the RC filter circuit filters out high-frequency noise, and the ceramic gas discharge tube array suppresses overvoltage surges.
[0048] Step 4: When the current in a certain channel exceeds the nominal value of 2.5A, the miniature circuit breaker connected in series in the power supply circuit is triggered to blow, and the redundant line automatically switches to the backup power supply circuit.
[0049] Example 3: Implementation of Wide Temperature Range Environmental Adaptability Test
[0050] Step 1: The aluminum alloy finned heat dissipation channel at the top of the support frame starts active heat dissipation, and the intelligent temperature-controlled fan adjusts the speed from 0-5000 rpm according to the feedback signal from the NTC temperature sensor.
[0051] Step 2: During the -40℃ low temperature test, the central control unit monitors the temperature data of each slot through the status register group connected by the pin header, and triggers the voltage compensation mechanism to increase the power supply voltage by 0.05V.
[0052] Step 3: In a high-temperature environment of 125℃, the heat dissipation system starts the forced air cooling mode, and the grounded copper column of the frame conducts the static charge generated by heat accumulation to the ground to prevent heat-induced signal drift.
[0053] Step 4: During the temperature shock cycle test, the mechanical positioning pin hole tolerance ensures that the interface contact impedance of the memory card remains stable during thermal expansion and contraction, with resistance fluctuation ≤5mΩ.
[0054] Example 4: Modular Expansion and Remote Monitoring Implementation
[0055] Step 1: The four basic units are connected to form a 200-channel test array via the 19-inch flange connection structure with the side modular expansion interface. The 4U height positioning slot ensures the accuracy of rack installation.
[0056] Step 2: The expanded central control unit establishes a physical connection with the distributed storage array through the SATA 7pin interface, and the gold finger plug-in structure of the storage chip circuit board realizes TB-level data caching.
[0057] Step 3: The RJ45 gigabit network interface on the back of the device is connected to the monitoring terminal through a star grounding structure, and the metal casing is grounded at multiple points to eliminate electromagnetic interference.
[0058] Step 4: The remote terminal sends the IEEE1588 standard synchronization command, and the central control unit coordinates the timing consistency between multiple devices through the FPGA logic module to complete the ultra-large-scale parallel test task.
[0059] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of this utility model and are not intended to limit it. Although this utility model has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solution of this utility model without departing from the spirit and scope of this technical solution, and all such modifications or substitutions should be covered within the scope of the claims of this utility model.
Claims
1. A multi-channel parallel dedicated memory card batch aging test device, characterized in that: include: The supporting frame has 50 independent slots and an electromagnetic compatibility (EMC) shielding structure physically connected to them; An interface conversion module array, each of its slots being rigidly connected to a PCI-Eto-Express interface converter that interconnects with peripheral components, wherein the converter has a protocol conversion chip and a hot-swap protection circuit soldered on its board. The multi-channel power distribution unit is electrically connected to the external DC regulated power supply via a copper busbar conductor and the main control power interface. The unit and the voltage regulation modules distributed in each slot form a power supply circuit. The transient voltage suppression network consists of multiple parallel transient voltage suppression TVS diode arrays soldered to the power input of the converter, and the frame's main input terminal is equipped with a resistor-capacitor filter circuit soldered to the PCB substrate. The central control unit is physically connected to each converter via a PCI-E bus metal contact. Its circuit board integrates a pin interconnection structure between a dual-core ARM Cortex-A7 main control processor and a field programmable gate array (FPGA) chip.
2. The multi-lane parallel dedicated memory card batch burn-in test apparatus according to claim 1, wherein: The protocol conversion chip is surface-mounted with a PLX9054 identifier. The hot-swap protection circuit includes a surface-mount self-resetting fuse and an array of electrostatic discharge protection devices soldered to the signal lines. The copper foil traces of each converter are provided with solder nodes for the resistor-capacitor components of the differential signal conditioning circuit.
3. The multi-lane parallel dedicated memory card batch burn-in test apparatus of claim 1, wherein: The multi-channel power distribution unit is equipped with two copper interfaces for main and backup 3.3V input terminals. The output terminals of each channel form a loop topology with the redundant power supply line coupled to the ring inductor.
4. The multi-channel parallel dedicated memory card batch aging test device according to claim 1, characterized in that: The top of the support frame is provided with an aluminum alloy finned heat dissipation channel and a temperature control fan is fixed by bolts. The metal probe of the NTC temperature sensor is welded to the bottom of each slot, and the tolerance of the positioning pin hole is ≤0.05mm.
5. The multi-channel parallel dedicated memory card batch aging test device according to claim 1, characterized in that: The central control unit is connected to a multi-channel status register group via a pin header. This register group has 50 independent signal pins corresponding to each slot position.
6. The multi-lane parallel dedicated memory card batch burn-in test apparatus of claim 1, wherein: The device has a modular expansion interface formed by mechanical milling on the side, which includes a 19-inch standard rack flange connection structure and a 4U height positioning slot.
7. The multi-lane parallel dedicated memory card batch burn-in test apparatus of claim 3, wherein: Each power supply circuit of the multi-channel power distribution unit is connected in series with a miniature circuit breaker, and the overcurrent protection threshold of its current detection point corresponds to the nominal value of the fuse set at 2.5A.
8. The multi-lane parallel dedicated memory card batch burn-in test apparatus of claim 1, wherein: The EMC shielding structure is a fully enclosed beryllium copper alloy spring sheet. The shielding layer is pressed against the grounding copper pillar of the frame through conductive foam. The incoming line protection structure is equipped with a parallel array of ceramic gas discharge tubes.
9. The multi-lane parallel dedicated memory card batch burn-in test apparatus of claim 5, wherein: The central control unit has a SATA 7pin interface on the back, which is connected to the gold finger connector of the storage chip circuit board of the storage array.
10. The multi-lane parallel dedicated memory card batch burn-in test apparatus of claim 1, wherein: The device has an RJ45 gigabit network interface stamped on the back, and its metal casing is connected to the PCB ground plane through a multi-point star grounding structure.