Double-ridge waveguide and micro-strip bridge combined synthesizer and solid-state power amplifier thereof
By combining a double-ridged waveguide with a microstrip bridge, the problems of high loss and large size in existing solid-state power amplifiers are solved, achieving high-power synthesis with low loss and high isolation, thus ensuring the stability and safety of solid-state power amplifiers.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- CHENGDU JIUXIN TECH CO LTD
- Filing Date
- 2025-05-23
- Publication Date
- 2026-04-17
AI Technical Summary
Existing solid-state power amplifier synthesis methods suffer from high losses in microstrip bridges, large volume and poor isolation in double-ridge waveguides, and high fabrication difficulty. There is an urgent need for a synthesizer with simple structure, reliable integration and low loss.
A synthesizer employing a combination of double-ridged waveguides and microstrip bridges includes a driver amplifier, a double-ridged waveguide distributor, a 90° bridge assembly, and a double-ridged waveguide synthesizer. Through 90° phase conversion and synthesis, it achieves uniform signal distribution and synthesis.
It reduces port standing wave reflections of the synthesizer, improves isolation, compensates for the loss shortcomings of the microstrip bridge, realizes low-loss high-power synthesis, and ensures the safe and reliable operation of the solid-state power amplifier.
Smart Images
Figure CN224138316U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of solid-state power amplifier technology, and in particular to a synthesizer combining a double-ridge waveguide and a microstrip bridge and its solid-state power amplifier. Background Technology
[0002] With the rapid development of the semiconductor industry, the synergistic effect of materials science, process engineering, and system design has led to increasingly higher single-chip power outputs for MMIC GaN amplifier chips. This presents new challenges to power combining methods in the 6-18GHz high-power solid-state amplifier band. Currently, existing power combining methods for solid-state amplifiers mainly include microstrip bridges, double-ridge waveguides, and radial combining. Microstrip bridge combining involves splitting the input signal into multiple paths using a microstrip power divider. Each path is amplified and then combined using a microstrip combiner. Its disadvantages include high loss and limited power output, but it offers good isolation and port reflection. Double-ridge waveguide combining uses a multi-stage double-ridge waveguide power divider. The input signal is first split into two paths by the first-stage divider, then further split into multiple paths by the second-stage divider. Each path is amplified and then combined using a double-ridge waveguide combiner. This method offers low loss but has a large size, poor port reflection, and poor isolation. Finally, radial combining achieves high power output by combining the output signals of multiple power amplifiers radially in space. Its core principle is to split the input signal into multiple paths using a distributor, amplify each path, and then combine them using a combiner. However, radial combining is bulky, difficult to manufacture, and has high material costs.
[0003] Therefore, there is an urgent need to propose a synthesizer and its solid-state power amplifier that combines a double-ridged waveguide and a microstrip bridge with a simple structure, reliable integration, and low loss. Utility Model Content
[0004] To address the aforementioned problems, the purpose of this invention is to provide a synthesizer combining a double-ridged waveguide and a microstrip bridge, and its solid-state power amplifier. The technical solution adopted by this invention is as follows:
[0005] A synthesizer combining a double-ridged waveguide and a microstrip bridge, comprising:
[0006] The driver amplifier takes the input signal before power amplification and amplifies it.
[0007] A double-ridged waveguide distributor is connected to a drive amplifier and uniformly distributes the input signal of the drive amplifier into several distribution signals.
[0008] The first 90° bridge assembly is connected to the double-ridge waveguide distributor to perform a 90° phase conversion on the distributed signal;
[0009] The final stage synthesizer assembly is connected to the first 90° bridge assembly and amplifies the distributed signal after 90° phase conversion to obtain the second amplified signal;
[0010] The second 90° bridge assembly is connected to the final stage synthesizer assembly and performs a 90° phase shift on the second amplified signal;
[0011] A double-ridged waveguide synthesizer, together with a second 90° bridge component, synthesizes the second amplified signal after a 90° phase conversion to obtain a synthesized signal.
[0012] It also includes a waveguide port that connects to a double-ridged waveguide synthesizer and outputs the synthesized signal.
[0013] Furthermore, the dual-ridge waveguide power divider is a one-to-four dual-ridge waveguide power divider; the dual-ridge waveguide combiner is a four-in-one dual-ridge waveguide combiner.
[0014] Furthermore, the dual-ridge waveguide distributor includes, from bottom to top, a distributor housing, a lower plate of the dual-ridge cavity, an upper plate of the dual-ridge cavity, and a distributor cover; a first waveguide microstrip transducer disposed between the lower plate of the dual-ridge cavity and the upper plate of the dual-ridge cavity and connected to a drive amplifier; and a waveguide distribution cavity disposed within the lower plate of the dual-ridge cavity and the upper plate of the dual-ridge cavity; the output of the waveguide distribution cavity is connected to a first 90° bridge assembly.
[0015] Furthermore, a first isolation resistor is provided at the branch node of the waveguide distribution cavity; the first isolation resistor is connected to the waveguide distribution cavity via a microstrip connection.
[0016] Furthermore, the dual-ridge waveguide synthesizer includes, from bottom to top, a synthesizer housing, a lower plate of the dual-ridge cavity, an upper plate of the dual-ridge cavity, and a top cover of the synthesizer; a waveguide synthesis cavity disposed within the lower plate and the upper plate of the dual-ridge cavity; and a second waveguide microstrip converter disposed between the waveguide synthesis cavity and the second 90° bridge assembly; the output of the waveguide synthesis cavity is connected to the waveguide port.
[0017] Furthermore, a second isolation resistor is provided at the combining node of the waveguide synthesizing cavity; the second isolation resistor is connected to the waveguide synthesizing cavity via a microstrip connection.
[0018] Furthermore, the first 90° bridge assembly and the second 90° bridge assembly have the same structure, and the first 90° bridge assembly includes a bridge mounting shell, a bridge microstrip board, a microstrip insulating board and a bridge top cover arranged sequentially from bottom to top, a load resistor connected to the bridge microstrip board, and a load resistor cover plate covering the load resistor.
[0019] Furthermore, the final stage synthesizer assembly includes an amplifier mounting base and a final stage synthesizer disposed within the amplifier mounting base; the final stage synthesizer is connected between the first 90° bridge assembly and the second 90° bridge assembly.
[0020] A solid-state power amplifier comprising a synthesizer combining a double-ridged waveguide and a microstrip bridge.
[0021] Compared with the prior art, the present invention has the following beneficial effects:
[0022] (1) This invention employs a combination of a double-ridged waveguide and a microstrip bridge (i.e., the first 90° bridge component 4 and the second 90° bridge component 6), which reduces stand-up wave reflection at the synthesizer port and improves isolation. Simultaneously, this invention compensates for the high loss of the microstrip bridge by utilizing the low-loss characteristics of the waveguide, minimizing the impact on the synthesized power. Furthermore, this invention is simple to manufacture and assemble, and easy to integrate. This results in relatively low loss and high reliability in high-power synthesis, enabling effective and safe high-power synthesis and ensuring long-term, effective, and safe operation of the solid-state power amplifier.
[0023] (2) This utility model adopts a double-ridged waveguide plus microstrip bridge (i.e., the first 90° bridge component 4 and the second 90° bridge component 6) to make up for the serious problems of port standing wave and loss deterioration when the number of channels of the multi-channel double-ridged waveguide synthesizer is multiplied, and the disadvantage of high line loss of the multi-channel microstrip bridge high-power synthesis. It combines the low port reflection and high isolation of the microstrip bridge with the low loss and high power of the double-ridged waveguide synthesis, which complement each other and form a new type of safe, stable and reliable ultra-wideband multi-channel high-power synthesizer.
[0024] In summary, this utility model has the advantages of simple structure, reliable integration, and low loss, and has high practical and promotional value in the field of solid-state power amplifier technology. Attached Figure Description
[0025] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this utility model and should not be regarded as a limitation on the scope of protection. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.
[0026] Figure 1 This is a structural schematic diagram of the present invention from a first angle.
[0027] Figure 2 This is a structural schematic diagram of the present invention from a second angle.
[0028] Figure 3This is a schematic diagram of the internal structure of the synthesizer from the first angle in this utility model.
[0029] Figure 4 This is a schematic diagram of the internal structure of the synthesizer from the second angle in this utility model.
[0030] Figure 5 This is a schematic diagram of the structure of the double-ridge waveguide distributor in this utility model.
[0031] Figure 6 This is a schematic diagram of the internal structure of the double-ridge waveguide distributor in this utility model.
[0032] Figure 7 This is a schematic diagram of the structure of the double-ridge waveguide synthesizer in this utility model.
[0033] Figure 8 This is a schematic diagram of the internal structure of the double-ridge waveguide synthesizer in this utility model.
[0034] Figure 9 This is a schematic diagram of the structure of the first 90° bridge assembly in this utility model.
[0035] Figure 10 This is a schematic diagram of the first internal structure of the first 90° bridge assembly in this utility model.
[0036] Figure 11 This is a schematic diagram of the second internal structure of the first 90° bridge assembly in this utility model.
[0037] Figure 12 This is a schematic diagram of the final stage synthesizer assembly in this utility model.
[0038] Figure 13 This is a test curve of the S11 common terminal standing wave of this utility model.
[0039] Figure 14 This is a test curve of the standing wave ratio at the S22 branch end of this utility model.
[0040] Figure 15 This is a curve of the S21 insertion loss test of this utility model.
[0041] Figure 16 This is a curve of the S12 phase consistency test of this utility model.
[0042] Figure 17 This is a test curve of the isolation degree between adjacent ports of this utility model.
[0043] Figure 18 This is a test curve of the isolation degree of non-adjacent ports of this utility model.
[0044] Figure 19This is a graph showing the actual test output power curve of the solid-state power amplifier in this invention.
[0045] In the above figures, the component names corresponding to the reference numerals are as follows:
[0046] 1. Dual-ridge waveguide distributor; 2. Dual-ridge waveguide synthesizer; 3. Driver amplifier; 4. First 90° bridge assembly; 5. Final stage synthesizer assembly; 6. Second 90° bridge assembly; 7. Waveguide port; 11. Distributor housing; 12. Lower plate of the dual-ridge cavity of the distributor; 13. Upper plate of the dual-ridge cavity of the distributor; 14. Top cover of the distributor; 15. First waveguide microstrip converter; 16. Waveguide distribution cavity; 17. First isolation resistor; 21 1. Synthesizer housing; 22. Lower plate of synthesizer dual-ridge cavity; 23. Upper plate of synthesizer dual-ridge cavity; 24. Top cover of synthesizer; 25. Second waveguide microstrip converter; 26. Second isolation resistor; 27. Waveguide synthesis cavity; 41. Bridge mounting housing; 42. Bridge microstrip board; 43. Microstrip insulating board; 44. Top cover of bridge; 45. Load resistor cover plate; 46. Load resistor; 51. Amplifier mounting base; 52. Final stage synthesizer amplifier. Detailed Implementation
[0047] To make the objectives, technical solutions, and advantages of this application clearer, the present invention will be further described below with reference to the accompanying drawings and embodiments. The embodiments of this utility model include, but are not limited to, the following embodiments. All other embodiments obtained by those skilled in the art based on the embodiments in this application without inventive effort are within the scope of protection of this application.
[0048] In this embodiment, the term "and / or" is merely a description of the relationship between related objects, indicating that there can be three relationships. For example, A and / or B can represent three situations: A exists alone, A and B exist simultaneously, and B exists alone.
[0049] The terms "first" and "second," etc., used in the specification and claims of this embodiment are used to distinguish different objects, not to describe a specific order of objects. For example, "first target object" and "second target object," etc., are used to distinguish different target objects, not to describe a specific order of target objects.
[0050] In the embodiments of this application, the terms "exemplary" or "for example" are used to indicate that something is an example, illustration, or description. Any embodiment or design that is described as "exemplary" or "for example" in the embodiments of this application should not be construed as being more preferred or advantageous than other embodiments or design. Specifically, the use of the terms "exemplary" or "for example" is intended to present the relevant concepts in a specific manner.
[0051] In the description of the embodiments in this application, unless otherwise stated, "multiple" means two or more. For example, multiple processing units means two or more processing units; multiple systems means two or more systems.
[0052] like Figures 1 to 12 As shown, this embodiment provides a solid-state power amplifier that employs a synthesizer combining a double-ridged waveguide and a microstrip bridge. This synthesizer includes a driver amplifier 3, a double-ridged waveguide distributor 1, a first 90° bridge assembly 4, a final-stage synthesizer assembly 5, a second 90° bridge assembly 6, a double-ridged waveguide synthesizer 2, and a WRD500D36 waveguide port 7. The driver amplifier 3 and the final-stage synthesizer assembly 5 are model YGPA75-0618C1. Furthermore, the double-ridged waveguide distributor 1 is connected to four first 90° bridge assemblies 4. The internal structure of each first 90° bridge assembly 4 is a stripline, with external ports transitioning via stripline-to-microstrip lines. Three ports are a common port, two are branch ports with a 90° phase difference, and one port is directly connected to a load resistor 46. Here, the double-ridged waveguide distributor 1 is in the form of a binary tree. The common port and the four branch ports are all converted by the first waveguide-microstrip converter 15. An isolation resistor 17 is added between each pair of waveguides, and the isolation resistor 17 is also connected via a waveguide-to-microstrip converter. Furthermore, the structure of the double-ridged waveguide synthesizer 2 is highly similar to that of the double-ridged waveguide distributor 1, and will not be described in detail here. In this embodiment, the combination of a double-ridged waveguide and a microstrip bridge (i.e., the first 90° bridge component 4 and the second 90° bridge component 6) compensates for the severe port standing wave and loss degradation problems of multi-channel double-ridged waveguide synthesizers when the number of channels is multiplied, and the high line loss of multi-channel microstrip bridges in high-power synthesis. It combines the low port reflection and high isolation of the microstrip bridge with the low loss and high power of double-ridged waveguide synthesis to form a safe, stable, and reliable new type of ultra-wideband multi-channel high-power synthesizer.
[0053] from Figures 13 to 18As can be seen, the VSWR at both the branch and common ends of the eight-channel synthesizer is below 2.5, with most below 2, which is significantly better than the VSWR of most multi-channel ultra-wideband synthesizers. The synthesizer's loss is less than -12dB (including a theoretical distribution loss of 9dB and a tooling-introduced loss of 1dB), and the actual synthesizer loss is less than -2dB, providing higher synthesis efficiency for multi-channel synthesis. The phase difference between each channel is less than ±8°, ensuring effective synthesis. The isolation between adjacent ports is at least 10dB, and the isolation between non-adjacent ports is around 13dB, effectively preventing crosstalk between reflected signals. Furthermore, each bridge has a synthesis capability of 50W continuous wave power, and the entire synthesizer can provide a synthesis capability of 200W. Whether considering S-parameter specifications, synthesis power, or synthesis safety and reliability, this synthesizer is the optimal choice for ultra-wideband high-power solid-state amplifier synthesis. Additionally, from... Figure 19 As can be seen, the minimum combined output power is 51.2 dBm, and the maximum combined output power is 54.4 dBm, with a typical output power of 200W continuous wave. This demonstrates that this embodiment exhibits high isolation, low loss, and low VSWR in the 6-18 GHz frequency band, effectively improving port matching with the RF chip, increasing the RF chip's resistance to burn-out during high-power multi-channel combining, and effectively performing high-power combining to ensure long-term stable and effective system operation.
[0054] The above embodiments are merely preferred embodiments of this utility model and are not intended to limit the scope of protection of this utility model. Any changes made based on the design principles of this utility model, or any non-creative changes made on this basis, shall fall within the scope of protection of this utility model.
Claims
1. A synthesizer combining a double-ridged waveguide and a microstrip bridge, characterized in that, include: Drive amplifier (3), connect the input signal before power amplification, and drive and amplify it; The double-ridge waveguide distributor (1) is connected to the drive amplifier (3) and uniformly distributes the input signal of the drive amplifier into several distribution signals. The first 90° bridge assembly (4) is connected to the double-ridge waveguide distributor (1) to perform a 90° phase conversion on the distributed signal; The final stage synthesizer assembly (5) is connected to the first 90° bridge assembly (4) and amplifies the distribution signal after 90° phase conversion to obtain the second amplified signal; The second 90° bridge assembly (6) is connected to the final stage synthesizer assembly (5) and performs a 90° phase shift on the second amplified signal; The double-ridge waveguide synthesizer (2) and the second 90° bridge component (6) synthesize the second amplified signal after 90° phase conversion to obtain the synthesized signal; And the waveguide port (7) is connected to the double-ridged waveguide synthesizer (2) and outputs the synthesized signal.
2. A synthesizer of a dual-ridge waveguide combined with a microstrip bridge according to claim 1, characterized in that, The dual-ridge waveguide splitter (1) is a one-to-four dual-ridge waveguide power divider; the dual-ridge waveguide synthesizer (2) is a four-in-one dual-ridge waveguide synthesizer.
3. A synthesizer of a dual-ridge waveguide combined with a microstrip bridge according to claim 1 or 2, characterized in that, The dual-ridge waveguide distributor (1) includes, from bottom to top, a distributor housing (11), a distributor dual-ridge cavity lower plate (12), a distributor dual-ridge cavity upper plate (13), and a distributor upper cover (14), a first waveguide microstrip converter (15) disposed between the distributor dual-ridge cavity lower plate (12) and the distributor dual-ridge cavity upper plate (13) and connected to a drive amplifier (3), and a waveguide distribution cavity (16) disposed in the distributor dual-ridge cavity lower plate (12) and the distributor dual-ridge cavity upper plate (13); the output of the waveguide distribution cavity (16) is connected to the first 90° bridge assembly (4).
4. A synthesizer of a combination of a dual-ridge waveguide and a microstrip electric bridge according to claim 3, characterized in that, A first isolation resistor (17) is provided at the branch node of the waveguide distribution cavity (16); the first isolation resistor (17) and the waveguide distribution cavity (16) are connected by microstrip.
5. A synthesizer of a dual-ridge waveguide combined with a microstrip bridge according to claim 1 or 2, characterized in that, The dual-ridge waveguide synthesizer (2) includes a synthesizer housing (21), a lower plate (22) of the dual-ridge cavity of the synthesizer, an upper plate (23) of the dual-ridge cavity of the synthesizer, and a top cover (24) of the synthesizer arranged sequentially from bottom to top. A waveguide synthesis cavity (27) is disposed in the lower plate (22) and the upper plate (23) of the dual-ridge cavity of the synthesizer. A second waveguide microstrip converter (25) is disposed between the waveguide synthesis cavity (27) and the second 90° bridge assembly (6). The output of the waveguide synthesis cavity (27) is connected to the waveguide port (7).
6. A synthesizer of a combination of a dual-ridge waveguide and a microstrip electric bridge according to claim 5, characterized in that, A second isolation resistor (26) is provided at the combining node of the waveguide synthesis cavity (27); the second isolation resistor (26) and the waveguide synthesis cavity (27) are connected by microstrip.
7. A dual-ridge waveguide combined with microstrip balun combiner synthesizer according to claim 1, characterized by, The first 90° bridge assembly (4) and the second 90° bridge assembly (6) have the same structure. The first 90° bridge assembly (4) includes a bridge mounting housing (41), a bridge microstrip board (42), a microstrip insulating board (43) and a bridge top cover (44) arranged sequentially from bottom to top, a load resistor (46) connected to the bridge microstrip board (42), and a load resistor cover plate (45) covering the load resistor (46).
8. A synthesizer combining a double-ridged waveguide and a microstrip bridge according to claim 1, characterized in that, The final stage synthesizer assembly (5) includes an amplifier mounting base (51) and a final stage synthesizer (52) disposed within the amplifier mounting base (51); the final stage synthesizer (52) is connected between the first 90° bridge assembly (4) and the second 90° bridge assembly (6).
9. A solid state power amplifier, characterized by, A synthesizer comprising a combination of a double-ridged waveguide and a microstrip bridge as described in any one of claims 1 to 8 is provided.