Graphene preparation device

Abstract

The utility model relates to a graphene preparation device. The graphene preparation device comprises a plasma chamber, a solid-state carbon source chamber and a reaction chamber which are communicated in sequence, the plasma chamber is configured to obtain a high-temperature heat source by utilizing plasma, and the solid-state carbon source chamber is configured to gasify a solid-state carbon source into a gaseous-state carbon source by utilizing a plasma technology. When the graphene preparation device is used for preparing graphene, carrier gas enters the plasma chamber and is heated to obtain high-temperature carrier gas; high-temperature carrier gas passes through a solid carbon source chamber filled with a solid carbon source, and the solid carbon source is gasified into a gaseous carbon source with adjustable components; and the gaseous carbon source and the catalyst react in the reaction chamber to generate graphene. The plasma is high in controllability of energy output, wide in temperature controllable range, capable of generating charged particles and activating the solid carbon source, and the advantages of effectively improving adjustability, stability, high activity, low cost, low risk and the like of the carbon source are achieved by combining water vapor vaporization and hydration reaction.

Description

Technical Field

[0001] This utility model relates to the field of graphene preparation technology, and in particular to a graphene preparation apparatus. Background Technology

[0002] Graphene is a material composed of carbon atoms arranged in sp... 2 Two-dimensional materials composed of hybrid orbitals possess unique structures that endow them with remarkable mechanical, electrical, and chemical properties. These properties make them promising candidates for applications in materials science, energy, and biomedicine. Traditional methods for preparing graphene include CVD and floating catalysis, all of which require the use of hydrogen, methane, or ethanol as carbon sources, resulting in significant safety risks, high costs, and stringent control conditions. Furthermore, there are technologies abroad that utilize electric arc vaporization of coal to replace hydrogen and alkanes as carbon sources for the production of carbon nanotubes; however, electric arc vaporization of coal suffers from high energy consumption and poor stability. Utility Model Content

[0003] Therefore, it is necessary to provide a graphene preparation device to address the technical problems of safety risks, high costs, and difficulty in controlling stable process conditions that arise from the requirement of using hydrogen, alkanes, etc. as carbon sources in graphene production.

[0004] A graphene preparation apparatus includes a plasma chamber, a solid carbon source chamber, and a reaction chamber connected in sequence. The plasma chamber is configured to obtain a high-temperature heat source using plasma, and the solid carbon source chamber is configured to vaporize a solid carbon source into a gaseous carbon source using plasma technology.

[0005] In the graphene preparation apparatus of this invention, when preparing graphene, a carrier gas enters the plasma chamber and is heated to a high temperature of, for example, 800℃ to 3000℃, to obtain a high-temperature carrier gas. Then, the high-temperature carrier gas directly passes through a solid carbon source chamber filled with a solid carbon source, vaporizing the solid carbon source into a gaseous carbon source with adjustable composition. Subsequently, the gaseous carbon source and catalyst react in the reaction chamber to generate graphene. This graphene preparation apparatus uses plasma technology to vaporize the solid carbon source into a gaseous carbon source with adjustable composition. Plasma has high controllability in energy output, exhibiting a wide temperature controllable range. It can also generate charged particles that activate the solid carbon source. By combining water vaporization and hydration reactions, it effectively improves the tunability, stability, high activity, low cost, and low risk of the carbon source, thereby solving the technical problems of safety risks, high costs, and difficulty in controlling stable process conditions associated with the use of hydrogen, alkanes, etc., as carbon sources in graphene production.

[0006] In one embodiment, a carrier gas inlet is provided at one end of the plasma chamber, and the carrier gas inlet is located at the end away from the solid carbon source chamber.

[0007] In one embodiment, the other end of the plasma chamber is provided with an adjustment gas inlet, which is located close to the solid carbon source chamber.

[0008] In one embodiment, the graphene preparation apparatus further includes an electrode located on the side near the carrier gas inlet of the plasma chamber.

[0009] In one embodiment, the graphene preparation apparatus further includes a power source located on one side of the electrode and electrically connected to the electrode.

[0010] In one embodiment, a purification membrane for purifying the gaseous carbon source is provided between the solid carbon source chamber and the reaction chamber.

[0011] In one embodiment, a solid carbon source inlet is provided at one end of the solid carbon source chamber, and the solid carbon source inlet is located close to the plasma chamber.

[0012] In one embodiment, a catalyst inlet is provided at one end of the reaction chamber, and the catalyst inlet is located close to the solid carbon source chamber.

[0013] In one embodiment, a gas outlet is provided at one end of the reaction chamber, and the gas outlet is located on the side of the catalyst inlet.

[0014] In one embodiment, the graphene preparation apparatus further includes a product collection chamber located downstream of and in communication with the reaction chamber. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of a graphene preparation apparatus according to one embodiment of the present invention. Detailed Implementation

[0016] To make the above-mentioned objects, features, and advantages of this utility model more apparent and understandable, the specific embodiments of this utility model will be described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a full understanding of this utility model. However, this utility model can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this utility model. Therefore, this utility model is not limited to the specific embodiments disclosed below.

[0017] It should be noted that when a component is said to be "fixed to" another component, it can be directly attached to the other component or there may be an intervening component. When a component is said to be "connected to" another component, it can be directly connected to the other component or there may be an intervening component. The terms "vertical," "horizontal," "left," "right," and similar expressions used in this document are for illustrative purposes only.

[0018] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0019] Please see Figure 1 The graphene preparation apparatus 100 of this invention includes a plasma chamber 110, a solid carbon source chamber 120, and a reaction chamber 130 connected in sequence. The plasma chamber 110 is configured to obtain a high-temperature heat source using plasma, and a carrier gas, or a carrier gas containing a regulating gas, can be heated within the plasma chamber 110 to become a high-temperature carrier gas. The solid carbon source chamber 120 is configured to vaporize a solid carbon source into a gaseous carbon source using plasma technology; the solid carbon source can be, for example, biomass, coal, or waste plastics. The gaseous carbon source and a catalyst react in the reaction chamber 130 to generate graphene.

[0020] When preparing graphene using the graphene preparation apparatus 100 of this embodiment, a carrier gas enters the plasma chamber 110 and is heated to a high temperature of, for example, 800°C to 3000°C to obtain a high-temperature carrier gas. Then, the high-temperature carrier gas directly passes through a solid carbon source chamber 120 filled with a solid carbon source, vaporizing the solid carbon source into a gaseous carbon source with adjustable composition, including hydrogen, alkanes, water vapor, etc. Then, the gaseous carbon source and the catalyst react in the reaction chamber 130 to generate graphene.

[0021] The graphene preparation apparatus 100 of this embodiment uses plasma technology to vaporize a solid carbon source into a gaseous carbon source with adjustable composition. Plasma has high controllability in energy output, exhibiting a wide temperature control range. At the same time, it can generate charged particles, which have an activating effect on the solid carbon source. By combining water vaporization and hydration reaction, it effectively improves the carbon source's adjustability, stability, high activity, low cost, and low risk, thereby solving the technical problems of safety risks, high costs, and difficulty in controlling stable process conditions caused by the use of hydrogen, alkanes, etc. as carbon sources in graphene production.

[0022] Based on the aforementioned embodiment, a carrier gas inlet 111 is provided at one end of the plasma chamber 110, and the carrier gas inlet 111 is located at the end away from the solid carbon source chamber 120. Specifically, as shown... Figure 1 As shown, the carrier gas inlet 111 is located at the leftmost side of the plasma chamber 110. When preparing graphene using the graphene preparation apparatus 100 of this embodiment, the carrier gas enters the plasma chamber 110 through the carrier gas inlet 111. Inside the plasma chamber 110, the carrier gas is heated to a high temperature, for example, 800°C to 3000°C, and the flow rate is adjustable according to the process, resulting in a high-temperature carrier gas. Furthermore, the carrier gas can be, but is not limited to, water vapor.

[0023] Based on the aforementioned embodiment, a regulating gas inlet 112 is provided at the other end of the plasma chamber 110, and the regulating gas inlet 112 is located close to the solid carbon source chamber 120. When preparing graphene using the graphene preparation apparatus 100 of this embodiment, the regulating gas enters the plasma chamber 110 from the regulating gas inlet 112. Inside the plasma chamber 110, the carrier gas and the regulating gas are heated together to a high temperature of, for example, 800°C to 3000°C. The flow rate is adjustable according to the process, resulting in a high-temperature carrier gas containing the regulating gas.

[0024] Based on the aforementioned embodiments, the graphene preparation apparatus 100 further includes an electrode 140, which is located on one side near the carrier gas inlet 111 of the plasma chamber 110. The electrode 140 is used to ionize the gas using a high-frequency alternating electric field to form plasma.

[0025] Based on the aforementioned embodiments, the graphene preparation apparatus 100 further includes a power supply 150, which is located on one side of the electrode 140 and electrically connected to the electrode 140. The power supply 150 is used to provide a stable current to the electrode 140.

[0026] Based on the aforementioned embodiment, a purification membrane 160 for purifying the gaseous carbon source is provided between the solid carbon source chamber 120 and the reaction chamber 130. The purification membrane 160 has through-holes of suitable size to allow the gaseous carbon source containing hydrogen, alkanes, water vapor, etc., to pass through, while preventing impurities in the gaseous carbon source other than hydrogen, alkanes, water vapor, etc., from passing through. Figure 1 As shown, the purification membrane 160 completely covers the outlet of the solid carbon source chamber 120. After the gaseous carbon source generated in the solid carbon source chamber 120 passes through the purification membrane 160, impurities in the gaseous carbon source are trapped on the left side of the purification membrane 160, allowing gaseous carbon sources containing hydrogen, alkanes, water vapor, etc., to pass through, thereby obtaining a pure gaseous carbon source, which is beneficial for generating high-purity graphene. Furthermore, the purification membrane 160 can be any membrane layer capable of purifying the aforementioned gaseous carbon source; this invention does not limit the material, thickness, etc., of the purification membrane 160.

[0027] Based on the aforementioned embodiment, a solid carbon source inlet 121 is provided at one end of the solid carbon source chamber 120, and the solid carbon source inlet 121 is located close to the plasma chamber 110. Specifically, as shown... Figure 1 As shown, the solid carbon source inlet 121 is located above the solid carbon source chamber 120. The solid carbon source enters the solid carbon source chamber 120 through the solid carbon source inlet 121, preferably filling the solid carbon source chamber 120 completely.

[0028] Based on the aforementioned embodiment, a catalyst inlet 131 is provided at one end of the reaction chamber 130, and the catalyst inlet 131 is located close to the solid carbon source chamber 120. Specifically, as shown... Figure 1 As shown, catalyst inlet 131 is located above reaction chamber 130. The catalyst for the reaction to produce graphene can enter reaction chamber 130 through catalyst inlet 131.

[0029] Based on the aforementioned embodiment, a gas outlet 132 is further provided at one end of the reaction chamber 130, and the gas outlet 132 is located on one side of the catalyst inlet 131. Specifically, as shown... Figure 1 As shown, gas outlet 132 is located above reaction chamber 130. Gaseous byproducts generated during the reaction within reaction chamber 130 can be discharged from reaction chamber 130 via gas outlet 132.

[0030] Based on the aforementioned embodiments, the graphene preparation apparatus 100 further includes a product collection chamber 170, which is located downstream of and communicates with the reaction chamber 130. For example... Figure 1 As shown, the product collection chamber 170 is located below the reaction chamber 130. The product collection chamber 170 is used to collect reaction products. Specifically, the gaseous carbon source and catalyst react in the reaction chamber 130 to generate graphene products, which can then be temporarily stored in the product collection chamber 170 below the reaction chamber 130.

[0031] It should be noted that the positions of the carrier gas inlet 111, regulating gas inlet 112, solid carbon source inlet 121, catalyst inlet 131, and gas outlet 132 in the graphene preparation device of this utility model are not restricted.

[0032] In the graphene preparation apparatus of this invention, when preparing graphene, a carrier gas enters the plasma chamber and is heated to a high temperature of, for example, 800℃ to 3000℃, to obtain a high-temperature carrier gas. Then, the high-temperature carrier gas directly passes through a solid carbon source chamber filled with a solid carbon source, vaporizing the solid carbon source into a gaseous carbon source with adjustable composition. Subsequently, the gaseous carbon source and catalyst react in the reaction chamber to generate graphene. This graphene preparation apparatus uses plasma technology to vaporize the solid carbon source into a gaseous carbon source with adjustable composition. Plasma has high controllability in energy output, exhibiting a wide temperature controllable range. It can also generate charged particles that activate the solid carbon source. By combining water vaporization and hydration reactions, it effectively improves the tunability, stability, high activity, low cost, and low risk of the carbon source, thereby solving the technical problems of safety risks, high costs, and difficulty in controlling stable process conditions associated with the use of hydrogen, alkanes, etc., as carbon sources in graphene production.

[0033] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0034] The embodiments described above are merely illustrative of several implementations of this utility model, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the utility model patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this utility model, and these all fall within the protection scope of this utility model. Therefore, the protection scope of this utility model patent should be determined by the appended claims.

Claims

1. A graphene production apparatus, characterized by, The graphene preparation device includes a plasma chamber, a solid carbon source chamber, and a reaction chamber connected in sequence. The plasma chamber is configured to obtain a high-temperature heat source using plasma, and the solid carbon source chamber is configured to vaporize the solid carbon source into a gaseous carbon source using plasma technology.

2. The graphene preparation apparatus according to claim 1, characterized in that, One end of the plasma chamber is provided with a carrier gas inlet, which is located at the end away from the solid carbon source chamber.

3. The graphene production apparatus according to claim 2, wherein The other end of the plasma chamber is provided with an adjustment gas inlet, which is located close to the solid carbon source chamber.

4. The graphene production apparatus according to claim 1, wherein The graphene preparation apparatus also includes an electrode located on the side near the carrier gas inlet of the plasma chamber.

5. The graphene production apparatus according to claim 4, wherein The graphene preparation apparatus also includes a power source, which is located on one side of the electrode and electrically connected to the electrode.

6. The graphene production apparatus according to claim 1, wherein A purification membrane for purifying the gaseous carbon source is provided between the solid carbon source chamber and the reaction chamber.

7. The graphene production apparatus according to claim 1, wherein One end of the solid carbon source chamber is provided with a solid carbon source inlet, which is located close to the plasma chamber.

8. The graphene production apparatus according to claim 1, wherein The reaction chamber is provided with a catalyst inlet at one end, and the catalyst inlet is located close to the solid carbon source chamber.

9. The graphene preparation apparatus according to claim 8, characterized in that, The reaction chamber is also provided with a gas outlet at one end, which is located on the side of the catalyst inlet.

10. The graphene production apparatus according to claim 1, wherein The graphene preparation apparatus further includes a product collection chamber, which is located downstream of the reaction chamber and is in communication with the reaction chamber.

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