Chemical vapor deposition equipment
The chemical vapor deposition equipment designed with rotating components and dual heating elements solves the problem of poor temperature uniformity in large-size substrates, and achieves uniform temperature control and improved epitaxial layer quality.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- GUANGCHI SEMICON TECH (SHANGHAI) CO LTD
- Filing Date
- 2025-05-09
- Publication Date
- 2026-04-28
AI Technical Summary
Existing chemical vapor deposition equipment exhibits poor temperature uniformity and a large temperature difference between the upper and lower sides of the thermal field when heating large-size substrates, leading to gas expansion, rising, and condensation, which affects the substrate surface quality.
The design employs a rotating assembly and dual heating elements. The center of the substrate is heated by the disc-shaped heating area of the first heating element, while the outer periphery is heated by the annular heating area of the second heating element. Combined with a temperature measuring assembly, precise temperature control is achieved to ensure temperature uniformity. The rotating assembly drives the substrate to rotate, thereby improving the quality of the epitaxial layer.
This achieves uniform temperature control of large-size substrates, reduces the temperature difference between the upper and lower sides of the thermal field, avoids gas expansion and condensation, and improves the quality and thickness uniformity of the epitaxial layer.
Smart Images
Figure CN224172851U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of vacuum coating technology, and in particular to a chemical vapor deposition device. Background Technology
[0002] Chemical vapor deposition (CVD) is a technique that, under specific temperature conditions, involves the interaction of mixed gases or between mixed gases and a substrate surface to form a thin film of metal or compound on the substrate surface. This modifies the material surface to meet specific performance requirements such as wear resistance, oxidation resistance, corrosion resistance, and particular electrical, optical, and tribological properties. Silicon carbide (SiC) epitaxy technology grows high-quality epitaxial layers on SiC substrates through CVD and is used to manufacture power devices.
[0003] For large substrates, existing chemical vapor deposition (CVD) equipment, due to limitations in heater size and cost, can only heat the central region. This results in a higher temperature in the center and a lower temperature in the periphery, making it difficult to effectively control the temperature uniformity of large substrates and leading to lower yields. Furthermore, existing CVD equipment primarily heats the substrate from the bottom up, achieving overall heating. However, this creates a significant temperature difference between the upper and lower sides of the substrate's thermal field, causing the gas at the bottom to expand, rise, condense, and then descend, resulting in turbulence. Utility Model Content
[0004] The purpose of this invention is to provide a chemical vapor deposition device that can effectively control the temperature uniformity of large-size substrates while saving costs. It is also suitable for heating small-size substrates and has a wide range of applications. In addition, the temperature difference between the upper and lower sides of the thermal field where the substrate is located is small, and there will be no situation where the gas in the lower part expands and rises to the upper part, condenses and then falls.
[0005] To achieve this objective, the present invention adopts the following technical solution:
[0006] A chemical vapor deposition apparatus, comprising:
[0007] Vacuum chamber;
[0008] A rotating assembly includes a driving component and a rotating component. The rotating component is rotatably connected to the wall of the vacuum chamber. The rotating component has a through hole, and a substrate carrier is disposed at the top opening of the through hole. The substrate carrier is used to support a substrate. The driving component is fixed to the vacuum chamber, and the output end of the driving component is used to drive the rotating component to rotate.
[0009] A heating assembly includes a first heating element and a second heating element. The first end of the first heating element is located inside the through hole and has a disc-shaped heating area for heating the central region of the substrate. The second end of the first heating element passes through the wall of the vacuum chamber and is fixed outside the vacuum chamber. The second heating element is disposed on the side of the substrate carrier disk away from the through hole. The first end of the second heating element is located inside the vacuum chamber and has an annular heating area for heating the peripheral region of the substrate. The second end of the second heating element passes through the wall of the vacuum chamber and is fixed outside the vacuum chamber.
[0010] In some possible implementations, the projection of the annular heating zone onto the disc-shaped heating zone partially overlaps with the annular heating zone.
[0011] In some possible implementations, the chemical vapor deposition apparatus further includes a temperature sensing component, which includes a first temperature sensing element and a second temperature sensing element. The first temperature sensing element is used to detect the temperature of the central region of the substrate and is communicatively connected to the first heating element. The second temperature sensing element is used to detect the temperature of the peripheral region of the substrate and is communicatively connected to both the first and second heating elements.
[0012] In some possible implementations, both the first and second temperature measuring elements are infrared temperature sensors, the second heating element has an inner cavity, and the cavity wall of the vacuum chamber has a first temperature measuring channel and a second temperature measuring channel that are both connected to the inner cavity. The first temperature measuring element is located outside the vacuum chamber and is disposed at the opening of the first temperature measuring channel, and the second temperature measuring element is located outside the vacuum chamber and is disposed at the opening of the second temperature measuring channel.
[0013] In some possible implementations, the vacuum chamber is provided with a gas inlet, and the heating temperature of the side of the second heating element closer to the gas inlet is greater than the heating temperature of the side of the second heating element farther from the gas inlet.
[0014] In some possible implementations, there are two second temperature measuring elements, both of which are communicatively connected to the second heating element and both of which are communicatively connected to the first temperature measuring element. One of the second temperature measuring elements is located on the side of the second heating element closer to the gas inlet, and the other second temperature measuring element is located on the side of the second heating element away from the gas inlet.
[0015] In some possible implementations, the driving element is a magnetically coupled rotator.
[0016] In some possible implementations, the chemical vapor deposition apparatus further includes a top plate and a bottom plate, both of which are fixed within the vacuum chamber. The top plate is located on the side of the second heating element closer to the first heating element, and the bottom plate is sleeved around the rotating assembly. The top plate, the bottom plate, and the walls of the vacuum chamber together form a process chamber, and the vacuum chamber is provided with a gas inlet that communicates with the process chamber.
[0017] In some possible implementations, the chemical vapor deposition apparatus further includes a first insulation element and a second insulation element, both of which are fixed to the cavity wall of the vacuum chamber. The first insulation element is located at the top of the top plate and has a through cavity for passing through a second heating element. The second insulation element is located at the bottom of the bottom plate and is sleeved around the rotating assembly.
[0018] In some possible implementations, the vacuum chamber is provided with a gas inlet for horizontally discharging gas and covering the horizontal plane of the substrate; and / or,
[0019] The chemical vapor deposition apparatus further includes a first temperature vapor pressure plate, which is fixed to the top opening of the through-hole, and the substrate tray overlaps the first temperature vapor pressure plate; and / or,
[0020] The chemical vapor deposition equipment also includes a third insulation component, which is disposed inside the through hole and sleeved outside the first heating component.
[0021] The beneficial effects of this utility model are:
[0022] This invention provides a chemical vapor deposition (CVD) apparatus, comprising a vacuum chamber, a rotating assembly, and a heating assembly. By combining a first heating element and a second heating element, the central region of the substrate is heated through the disc-shaped heating area of the first heating element, while the peripheral region of the substrate is heated through the annular heating area of the second heating element. This approach saves costs while effectively controlling the temperature uniformity of large-size substrates. Furthermore, it is also suitable for heating small-size substrates, broadening the applicability of the CVD apparatus. Positioning the disc-shaped heating area of the first heating element within a through-hole and the annular heating area of the second heating element on the side of the substrate carrier disk away from the through-hole ensures a small temperature difference between the upper and lower sides of the thermal field surrounding the substrate, preventing the gas from expanding and rising to condense and then descending. The rotating assembly drives the substrate carrier disk to rotate, thereby rotating the substrate and ensuring the quality of the epitaxial layer on the substrate, reducing surface defects, and resulting in a more uniform epitaxial layer thickness. Positioning the first end of the first heating element within the through-hole facilitates heating of the substrate without affecting the rotation of the substrate by the rotating assembly. Attached Figure Description
[0023] Figure 1 This is a first structural schematic diagram of the chemical vapor deposition apparatus provided by this utility model;
[0024] Figure 2 This is a second structural schematic diagram of the chemical vapor deposition apparatus provided by this utility model;
[0025] Figure 3 This is a cross-sectional view of the chemical vapor deposition apparatus provided by this utility model.
[0026] In the picture:
[0027] 1. Vacuum chamber; 11. First temperature measuring channel; 12. Second temperature measuring channel; 13. Gas inlet; 14. Chamber body; 15. First flange; 16. Second flange; 17. Third flange; 18. Evacuation port; 19. Transfer port;
[0028] 2. Rotating assembly; 21. Driving component; 22. Rotating component; 221. Through hole; 23. Substrate carrier;
[0029] 31. First heating element; 32. Second heating element; 321. Inner cavity;
[0030] 4. Top plate; 5. Bottom plate; 6. First insulation component; 7. Second insulation component; 8. First heat spreader plate; 81. Clearance hole; 9. Third insulation component; 10. Second heat spreader plate; 20. Support. Detailed Implementation
[0031] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, the accompanying drawings show only the parts relevant to the present invention, not the entire structure.
[0032] In the description of this utility model, unless otherwise explicitly specified and limited, the terms "connected," "linked," and "fixed" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.
[0033] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.
[0034] In the description of this embodiment, the terms "upper," "lower," "right," etc., refer to the orientation or positional relationship shown in the accompanying drawings. They are used only for ease of description and simplification of operation, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model. In addition, the terms "first" and "second" are only used for distinction in description and have no special meaning.
[0035] like Figures 1 to 3As shown, this utility model provides a chemical vapor deposition (CVD) apparatus, which can be specifically applied to high-temperature CVD or metal-organic CVD. In this embodiment, the CVD apparatus is used to grow a high-quality epitaxial layer on a silicon carbide substrate. The CVD apparatus includes a vacuum chamber 1, a rotating assembly 2, and a heating assembly. The rotating assembly 2 includes a drive component 21 and a rotating component 22. The rotating component 22 is rotatably connected to the wall of the vacuum chamber 1. The rotating component 22 is provided with a through hole 221, and a substrate carrier 23 is provided at the top opening of the through hole 221. The substrate carrier 23 is used to support the substrate. The drive component 21 is fixed to the vacuum chamber 1, and the output end of the drive component 21 is used to drive the rotating component 22 to rotate. The heating assembly includes a first heating element 31 and a second heating element 32. The first end of the first heating element 31 is located inside the through-hole 221, i.e., below the substrate carrier 23. The first end of the first heating element 31 has a disc-shaped heating area for heating the central region of the substrate. The second end of the first heating element 31 passes through the wall of the vacuum chamber 1 and is fixed outside the vacuum chamber 1. Specifically, the chemical vapor deposition apparatus also includes a support 20, which is fixed outside the vacuum chamber 1. The second end of the first heating element 31 passes through the wall of the vacuum chamber 1 and is fixed to the support 20. The second heating element 32 is located on the side of the substrate carrier 23 away from the through-hole 221, i.e., above the substrate carrier 23. The first end of the second heating element 32 is located inside the vacuum chamber 1. The first end of the second heating element 32 has an annular heating area for heating the peripheral region of the substrate. The second end of the second heating element 32 passes through the wall of the vacuum chamber 1 and is fixed outside the vacuum chamber 1. The central region here refers to the area of the substrate extending outward from the center, while the peripheral region refers to the area outside the central region.
[0036] Combining the first heating element 31 and the second heating element 32, the central region of the substrate is heated by the disc-shaped heating area of the first heating element 31, and the peripheral region of the substrate is heated by the annular heating area of the second heating element 32. This approach saves costs while effectively controlling the temperature uniformity of large-size substrates. Furthermore, it is also suitable for heating small-size substrates, broadening the applicability of the chemical vapor deposition equipment. Specifically, it is compatible with 6-inch and 8-inch substrates. Positioning the disc-shaped heating area of the first heating element 31 within the through-hole 221 and the annular heating area of the second heating element 32 on the side of the substrate carrier 23 away from the through-hole 221 ensures a small temperature difference between the upper and lower sides of the thermal field surrounding the substrate, preventing the gas at the bottom from expanding and rising to the top, condensing, and then falling back down. Driving the substrate carrier 23 to rotate via the rotating assembly 2, which in turn rotates the substrate, ensures the quality of the epitaxial layer on the substrate, reduces surface defects, and makes the thickness of the epitaxial layer more uniform. Positioning the first heating element 31 within the through-hole 221 facilitates heating of the substrate without affecting the rotation of the substrate by the rotating assembly 2.
[0037] Optionally, in this embodiment, the projection of the annular heating region onto the disk-shaped heating region partially overlaps with the disk-shaped heating region. Partial overlap means the overlapping portion is the edge line, i.e., the projection of the annular heating region onto the disk-shaped heating region coincides with the outer edge line of the disk-shaped heating region, or the overlapping portion is a ring-shaped surface. This arrangement avoids poor uniformity in the gap between the annular and disk-shaped heating regions when the temperature is distributed along the substrate thickness direction, further ensuring the temperature uniformity of the substrate. Furthermore, the specific degree of overlap between the projection of the annular heating region onto the disk-shaped heating region and the partial overlap of the disk-shaped heating region can be determined according to actual conditions to ensure the uniformity of the substrate temperature.
[0038] Optionally, in this embodiment, the chemical vapor deposition apparatus further includes a temperature measuring component, comprising a first temperature measuring element and a second temperature measuring element. The first temperature measuring element is used to detect the temperature of the central region of the substrate and is communicatively connected to the first heating element 31. The second temperature measuring element is used to detect the temperature of the peripheral region of the substrate and is communicatively connected to both the first and second heating elements 32. By setting the first and second temperature measuring elements, the temperature of the substrate is monitored separately, and the temperature data is transmitted to the first and second heating elements 31 and 32 respectively, enabling precise temperature control of the substrate. The communicative connection between the second and first temperature measuring elements ensures the overall temperature uniformity of the substrate.
[0039] Optionally, in this embodiment, both the first and second temperature measuring elements are infrared temperature sensors. The second heating element 32 has an inner cavity 321. The cavity wall of the vacuum chamber 1 has a first temperature measuring channel 11 and a second temperature measuring channel 12 that are both connected to the inner cavity 321. The first temperature measuring element is located outside the vacuum chamber 1 and is positioned at the opening of the first temperature measuring channel 11, and the second temperature measuring element is located outside the vacuum chamber 1 and is positioned at the opening of the second temperature measuring channel 12. Using infrared temperature sensors to detect the infrared radiation emitted by the substrate for temperature measurement eliminates the need for direct contact with the substrate, avoiding contamination, wear, or damage caused by contact. Based on the first temperature measuring channel 11 and the second temperature measuring channel 12 positioned on the cavity wall of the vacuum chamber 1, the inner cavity 321 of the second heating element 32 can serve as a shared temperature measuring channel for both the first and second temperature measuring elements, resulting in a compact structure and facilitating substrate temperature measurement. Furthermore, the first and second temperature measuring elements are located outside the vacuum chamber 1, making their installation relatively convenient.
[0040] Optionally, both the first heating element 31 and the second heating element 32 are graphite resistance heaters. Furthermore, the power control module of the graphite resistance heater is used to control the heating temperature. Using a graphite resistance heater to perform radiant heating of the substrate carrier 23 without contact with the substrate carrier 23 can meet the process temperature requirements, and radiant heating does not require contact with the substrate carrier 23, thus avoiding mechanical stress on the substrate carrier 23.
[0041] Optionally, the vacuum chamber 1 is provided with a gas inlet 13, which is used to introduce a carrier gas or a process gas. The heating temperature of the second heating element 32 on the side near the gas inlet 13 is greater than the heating temperature of the side of the second heating element 32 away from the gas inlet 13. Since the temperature of the substrate periphery on the side near the gas inlet 13 is lower than the temperature of the substrate periphery on the side away from the gas inlet 13, the above arrangement can ensure a uniform temperature around the substrate. Specifically, the carrier gas is hydrogen. Introducing the carrier gas before introducing the process gas can make the thermal field around the substrate more uniform. In this embodiment, the gas inlet 13 is used to horizontally exhaust the gas and cover the horizontal surface of the substrate. Here, the gas refers to the carrier gas or the process gas. This arrangement allows the process gas to flow parallel along the substrate surface, resulting in a higher quality epitaxial layer.
[0042] Optionally, two second temperature measuring elements are provided. Both second temperature measuring elements are communicatively connected to the second heating element 32 and to the first temperature measuring element. One second temperature measuring element is located on the side of the second heating element 32 closer to the gas inlet 13, and the other second temperature measuring element is located on the side of the second heating element 32 away from the gas inlet 13. The average temperature measured by the two second temperature measuring elements is taken and compared with the temperature of the first temperature measuring element. The two second temperature measuring elements control the power of the second heating element 32, and the first temperature measuring element controls the power of the first heating element 31, so as to achieve control of the overall substrate temperature and temperature uniformity.
[0043] Optionally, the vacuum chamber 1 includes a chamber body 14, a first flange 15, and a second flange 16. The top of the chamber body 14 has a first mounting port, and the first flange 15 is detachably connected to the first mounting port. The second heating element 32 is detachably connected to the first flange 15. The bottom of the chamber body 14 has a second mounting port, and the second flange 16 is detachably connected to the second mounting port. The rotating assembly 2 is detachably connected to the second flange 16. This arrangement facilitates the assembly and disassembly of the second heating element 32 and the rotating assembly 2. Specifically, the first flange 15 is fixed to the first mounting port with bolts, and the second flange 16 is fixed to the second mounting port with bolts. Furthermore, a gas inlet 13 is provided on the chamber body 14. Specifically, the first flange 15 has three third flanges 17, which are used to install one first temperature measuring element and two second temperature measuring elements, respectively. The middle of each third flange 17 is hollowed out to serve as a temperature measuring channel. Additionally, the three third flanges 17 are located on the same straight line.
[0044] Optionally, sealing rings are provided between the first flange 15 and the chamber body 14, and between the second flange 16 and the chamber body 14, for sealing purposes. Furthermore, the chamber body 14 is made of stainless steel. The use of stainless steel provides the chamber body 14 with good vacuum sealing performance, maintaining the vacuum level within the chamber body 14.
[0045] Optionally, the driving element 21 is a magnetically coupled rotator. By setting the magnetically coupled rotator, the rotation speed and accuracy of the substrate can be controlled. Magnetically coupled rotators are mature technologies in related fields, and will not be described in detail in this embodiment. Optionally, the rotating element 22 is a rotating tube, and the inner cavity 321 of the rotating tube serves as a through hole 221. Specifically, the driving element 21 is located outside the vacuum chamber 1 and inside the support 20.
[0046] In addition, the chemical vapor deposition apparatus also includes a first heat spreader 8, which is fixed to the top opening of the through hole 221, and the substrate tray 23 is attached to the first heat spreader 8. The first heat spreader 8 can conduct the heat radiated by the first heating element 31 to the substrate tray 23 along the thickness direction of the first heat spreader 8, and can make the temperature distribution uniform, thereby making the temperature distribution in the central region of the substrate more uniform. The magnetically coupled rotator drives the rotating element 22 to rotate, and the rotating element 22 drives the first heat spreader 8 to rotate, thereby driving the substrate tray 23 and the substrate on the substrate tray 23 to rotate.
[0047] Optionally, the chemical vapor deposition apparatus further includes a top plate 4 and a bottom plate 5, both fixed within the vacuum chamber 1. The top plate 4 is located on the side of the second heating element 32 closest to the first heating element 31, and the bottom plate 5 is fitted over the rotating assembly 2. The top plate 4, bottom plate 5, and the cavity wall of the vacuum chamber 1 together form a process chamber. The vacuum chamber 1 is provided with a gas inlet 13, which communicates with the process chamber. This arrangement confines the process gas within the process chamber, facilitating its horizontal flow. Specifically, both the top plate 4 and bottom plate 5 are fixed to the cavity wall of the vacuum chamber 1. Optionally, the bottom of the vacuum chamber 1 is provided with an extraction port 18, located on the side of the rotating assembly 2 opposite to the gas inlet 13. The extraction port 18 is used to connect to a vacuum pump assembly. After the process gas enters the process chamber through the gas inlet 13, it passes through the process chamber and is then extracted from the process chamber by the vacuum pump assembly.
[0048] Optionally, the vacuum chamber 1 is also provided with a transfer port 19, which is located on the side of the rotating assembly 2 away from the gas inlet 13. The transfer port 19 is connected to the process chamber and is used for the robot arm to transfer the substrate.
[0049] Optionally, the chemical vapor deposition apparatus further includes a first insulating element 6 and a second insulating element 7. Both the first insulating element 6 and the second insulating element 7 are fixed to the cavity wall of the vacuum chamber 1. The first insulating element 6 is located at the top of the top plate 4 and has a through cavity for the second heating element 32 to pass through. The second insulating element 7 is located at the bottom of the bottom plate 5 and is fitted over the rotating assembly 2. By setting the first insulating element 6 and the second insulating element 7, the temperature distribution inside the vacuum chamber 1 is made more uniform. Specifically, the second heating element 32 passes through the through cavity and is fixed to the top wall of the vacuum chamber 1.
[0050] Specifically, each of the base plates 5 is provided with a first circular hole, and the second insulation component 7 is provided with a second circular hole communicating with the first circular hole, which in turn communicates with the evacuation port 18. This arrangement facilitates the extraction of process gas from the process chamber. In addition, the first insulation component 6 is provided with three connecting holes, which correspond one-to-one with a first temperature measuring channel 11 and two second temperature measuring channels 12, and are used as temperature measuring channels.
[0051] Optionally, the first insulation component 6 and the second insulation component 7 are both made of clean insulation material, and the top plate 4, the bottom plate 5 and the substrate carrier plate 23 are all made of high temperature resistant clean material.
[0052] In addition, the chemical vapor deposition apparatus also includes a second heat spreader 10, which passes through the top plate 4 and is fixed to the first insulation member 6. The second heat spreader 10 can conduct the heat radiated by the first heating element 31 along the thickness direction of the second heat spreader 10 to the substrate, and make the temperature distribution to the outer area of the substrate more uniform. Furthermore, in this embodiment, in order to facilitate the handling of the substrate, the bottom end of the first heat spreader 8 is provided with a clearance hole 81 communicating with the through hole 221. In other embodiments, the second heat spreader 10 is not provided with a clearance hole 81, and all the heat radiated by the first heating element 31 is radiated to the second heat spreader 10. The first heat spreader 8 and the second heat spreader 10 in this embodiment are both mature technologies in related fields, and will not be described in detail in this embodiment.
[0053] Optionally, the chemical vapor deposition apparatus further includes a third insulation element 9, which is disposed within the through hole 221 and fitted over the first heating element 31. The third insulation element 9 ensures a more uniform heat distribution within the through hole 221. Further, the third insulation element 9 is an insulation tube with a cylindrical outer wall. By incorporating the first insulation element 6, the second insulation element 7, and the third insulation element 9, the chemical vapor deposition apparatus achieves excellent insulation performance and high heating efficiency.
[0054] In addition, the chemical vapor deposition equipment also includes a water-cooling component, which can cool the outer wall of the vacuum chamber 1, further improving safety and reliability.
[0055] The process flow of the chemical vapor deposition (CVD) equipment is as follows: A robotic arm places the substrate on the substrate carrier 23. The first heating element 31 and the second heating element 32 are turned on, and a carrier gas is introduced to heat the substrate. Simultaneously, the rotating assembly 2 is turned on to rotate the substrate carrier 23. After the substrate reaches the required process temperature, process gas is introduced to deposit a thin film on the substrate. During this process, a first temperature sensor and two second temperature sensors monitor the substrate temperature throughout, and the power control module of the first heating element 31 and the second heating element 32 is used to precisely control the temperature of the substrate. After the thin film deposition is completed, the process gas is stopped, the rotation is stopped, and the first heating element 31 and the second heating element 32 are turned off to cool the substrate. Once the substrate has cooled to a suitable temperature, the robotic arm removes it from the vacuum chamber 1, completing the deposition process.
[0056] The specific heating process is as follows: the disc-shaped heating area of the first heating element 31 radiates and heats the substrate carrier 23 and the first heat spreader 8, and the substrate carrier 23 heats the substrate in contact. The annular heating area of the second heating element 32 radiates and heats the second heat spreader 10, and the second heat spreader 10 heats the substrate in radiates.
[0057] Obviously, the above embodiments of this utility model are merely examples for clearly illustrating the present utility model, and are not intended to limit the implementation of the present utility model. Those skilled in the art can make various obvious changes, readjustments, and substitutions without departing from the protection scope of this utility model. It is neither necessary nor possible to exhaustively describe all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this utility model should be included within the protection scope of the claims of this utility model.
Claims
1. A chemical vapor deposition apparatus, characterized in that, include: Vacuum chamber (1); The rotating assembly (2) includes a driving member (21) and a rotating member (22). The rotating member (22) is rotatably connected to the cavity wall of the vacuum chamber (1). The rotating member (22) is provided with a through hole (221). A substrate carrier (23) is provided at the top opening of the through hole (221). The substrate carrier (23) is used to support the substrate. The driving member (21) is fixed to the vacuum chamber (1). The output end of the driving member (21) is used to drive the rotating member (22) to rotate. The heating assembly includes a first heating element (31) and a second heating element (32). The first end of the first heating element (31) is located inside the through hole (221). The first end of the first heating element (31) has a disc-shaped heating area for heating the central region of the substrate. The second end of the first heating element (31) passes through the cavity wall of the vacuum chamber (1) and is fixed outside the vacuum chamber (1). The second heating element (32) is disposed on the side of the substrate carrier (23) away from the through hole (221). The first end of the second heating element (32) is located inside the vacuum chamber (1). The first end of the second heating element (32) has an annular heating area for heating the peripheral region of the substrate. The second end of the second heating element (32) passes through the cavity wall of the vacuum chamber (1) and is fixed outside the vacuum chamber (1).
2. The chemical vapor deposition apparatus according to claim 1, characterized in that, The projection of the annular heating zone onto the disc-shaped heating zone partially overlaps with the annular heating zone.
3. The chemical vapor deposition apparatus according to claim 1, characterized in that, The chemical vapor deposition equipment further includes a temperature measuring component, which includes a first temperature measuring element and a second temperature measuring element. The first temperature measuring element is used to detect the temperature of the central region of the substrate and is communicatively connected to the first heating element (31). The second temperature measuring element is used to detect the temperature of the peripheral region of the substrate and is communicatively connected to the first temperature measuring element and to the second heating element (32).
4. The chemical vapor deposition apparatus according to claim 3, characterized in that, Both the first and second temperature measuring elements are infrared temperature sensors. The second heating element (32) is provided with an inner cavity (321). The cavity wall of the vacuum chamber (1) is provided with a first temperature measuring channel (11) and a second temperature measuring channel (12) that are both connected to the inner cavity (321). The first temperature measuring element is located outside the vacuum chamber (1) and is disposed at the opening of the first temperature measuring channel (11). The second temperature measuring element is located outside the vacuum chamber (1) and is disposed at the opening of the second temperature measuring channel (12).
5. The chemical vapor deposition apparatus according to claim 3, characterized in that, The vacuum chamber (1) is provided with a gas inlet (13), and the heating temperature of the second heating element (32) on the side closer to the gas inlet (13) is greater than the heating temperature of the second heating element (32) on the side farther away from the gas inlet (13).
6. The chemical vapor deposition apparatus according to claim 5, characterized in that, There are two second temperature measuring elements. Both second temperature measuring elements are communicatively connected to the second heating element (32) and both second temperature measuring elements are communicatively connected to the first temperature measuring element. One of the second temperature measuring elements is located on the side of the second heating element (32) close to the gas inlet (13), and the other second temperature measuring element is located on the side of the second heating element (32) away from the gas inlet (13).
7. The chemical vapor deposition apparatus according to claim 1, characterized in that, The driving component (21) is a magnetically coupled rotator.
8. The chemical vapor deposition apparatus according to claim 1, characterized in that, The chemical vapor deposition apparatus further includes a top plate (4) and a bottom plate (5), both of which are fixed inside the vacuum chamber (1). The top plate (4) is located on the side of the second heating element (32) near the first heating element (31), and the bottom plate (5) is sleeved on the outside of the rotating assembly (2). The top plate (4), the bottom plate (5), and the cavity wall of the vacuum chamber (1) together form a process chamber. The vacuum chamber (1) is provided with a gas inlet (13), which communicates with the process chamber.
9. The chemical vapor deposition apparatus according to claim 8, characterized in that, The chemical vapor deposition apparatus further includes a first insulation component (6) and a second insulation component (7). The first insulation component (6) and the second insulation component (7) are both fixed to the cavity wall of the vacuum chamber (1). The first insulation component (6) is located at the top of the top plate (4). The first insulation component (6) has a through cavity for inserting a second heating component (32). The second insulation component (7) is located at the bottom of the bottom plate (5) and is sleeved on the outside of the rotating assembly (2).
10. The chemical vapor deposition apparatus according to claim 1, characterized in that, The vacuum chamber (1) is provided with a gas inlet (13), which is used to horizontally discharge gas and cover the horizontal surface of the substrate; and / or, The chemical vapor deposition apparatus further includes a first temperature-equalizing plate (8), which is fixed to the top opening of the through-hole (221), and the substrate carrier (23) overlaps the first temperature-equalizing plate (8); and / or, The chemical vapor deposition apparatus further includes a third insulation element (9), which is disposed inside the through hole (221) and sleeved outside the first heating element (31).