Sagger for sintering semiconductor ceramic material

Abstract

The utility model relates to the field of sintering jigs, in particular to a sagger for semiconductor ceramic material sintering, which comprises a base, a bottom plate and a surrounding side plate, annular grooves are arranged on the upper end face and the lower end face of the base, the lower end of the surrounding side plate is arranged in the annular grooves, a positioning hole is arranged at the upper end of the base, and a stand column is arranged at the lower end of the bottom plate. The stand columns are inserted into the positioning holes, the lower end face of the bottom plate is attached to the upper end face of the base and located in the surrounding side plate, the peripheral corners of the bottom plate and the peripheral corners of the surrounding side plate are arc corners, ventilation openings are formed in the four side faces of the surrounding side plate in an array mode, and the section of each ventilation opening is an hourglass section. A detachable combined structure of the base, the bottom plate and the enclosing side plates is adopted, thermal expansion stress concentration is avoided, the service life of the sagger is prolonged, a ventilation gap is reserved during stacking, and exhaust gas exhaust is accelerated.

Description

Technical Field

[0001] This utility model relates to the field of sintering fixtures, and specifically to a sagger for sintering semiconductor ceramic materials. Background Technology

[0002] A sagger is a round bowl of various sizes made of refractory clay, fired at high temperatures. All porcelain blanks must first be placed in a sagger before being placed in the kiln for firing. While currently widely used in industries such as ceramics, metallurgy, and glass, saggers still have some drawbacks. An improperly designed sagger corner may obstruct heat transfer, resulting in poor heating at internal angles and incomplete sintering of the material. Furthermore, the bottom center area may lack an effective heat transfer channel, leading to uneven heating of the material in the central region.

[0003] Therefore, in order to overcome the shortcomings of the existing technology, it is necessary to design a sagger with a simple structure for sintering semiconductor ceramic materials. Utility Model Content

[0004] This invention provides a sagger for sintering semiconductor ceramic materials to address the problems of existing technologies.

[0005] The objective of this utility model can be achieved through the following technical solution: A sagger for sintering semiconductor ceramic materials includes: a base, a bottom plate, and an enclosing side plate. The upper and lower surfaces of the base are provided with annular grooves. The lower end of the enclosing side plate is placed in the annular groove. The upper end of the base is provided with a positioning hole. The lower end of the bottom plate is provided with a column, which is inserted into the positioning hole. The lower surface of the bottom plate is attached to the upper surface of the base and located inside the enclosing side plate. The four corners of the bottom plate and the four corners of the enclosing side plate are all rounded corners. The four sides of the enclosing side plate are arranged with ventilation openings in an array. The cross-section of the ventilation opening is an hourglass cross-section, and the width of the middle throat of the ventilation opening is smaller than the width of the two sides.

[0006] In a further improvement, the ventilation openings on the four sides of the enclosing side plate are staggered.

[0007] In a further improvement, the inner opening diameter of the ventilation opening is D1, the outer opening diameter is D2, and the minimum throat diameter of the ventilation opening is D3, satisfying: D1 ≤ D2 ≤ 1.5D1, 0.4D1 ≤ D3 ≤ 0.7D1; the throat length of the ventilation opening is L, satisfying: 10mm ≤ L ≤ 20mm; the transition radius R1 between the inner opening and the throat satisfies: 3mm ≤ R1 ≤ 5mm; and the transition radius R2 between the inner opening and the throat satisfies: 5mm ≤ R2 ≤ 8mm.

[0008] In a further improvement, four sets of positioning holes are symmetrically arranged with respect to the column.

[0009] Compared with the prior art, the beneficial effects of the sagger for sintering semiconductor ceramic materials of this utility model are as follows:

[0010] The system adopts a detachable and modular structure (base, bottom plate, and enclosing side plates). The annular groove of the base and the side plates form a stepped difference, which avoids thermal expansion stress concentration, extends the service life of the sagger, and provides ventilation gaps during stacking to accelerate the discharge of exhaust gas. The right-angle corners of the bottom plate and the enclosing side plates are changed to rounded corners to eliminate vortex zones, enhance convective heat transfer, reduce the retention of corrosive gases, and improve corrosion resistance. The enclosing side plates are equipped with hourglass-shaped ventilation openings, which utilize the Venturi effect to accelerate airflow, increase the heat flux density in the central area, and ensure uniform airflow diffusion in the corner areas, significantly reducing the temperature gradient inside the sagger. The ventilation openings are staggered to form a three-dimensional cross flow field and vortices, which accelerates gas mixing, improves the completeness of raw material decomposition, and is suitable for multi-layer stacking processes, reducing the temperature difference between layers. The bottom plate is inserted into the columns through four sets of symmetrical positioning holes to ensure flat installation and uniform material layering. At the same time, the gaps between the columns form air guiding channels and reduce pressure loss in the stack. Attached Figure Description

[0011] Figure 1 This is a structural schematic diagram of the present invention.

[0012] Figure 2 This is a schematic diagram of the structure of the exploded view of this utility model.

[0013] Figure 3 This is a schematic diagram of the internal structure of the present invention.

[0014] Figure 4 for Figure 3 Schematic diagram of the enlarged part

[0015] In the diagram, 1-base, 11-annular groove, 12-positioning hole, 2-base plate, 21-column, 3-enclosing side plate, 31-ventilation opening. Detailed Implementation

[0016] In the description of this utility model, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings and are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model; unless otherwise expressly specified and limited, the terms "installed," "connected," and "joined" should be interpreted broadly, for example, they can refer to fixed connections or detachable connections, etc. For those skilled in the art, the specific meaning of the above terms in this utility model can be understood according to the specific circumstances.

[0017] The following describes the embodiments and appendices. Figures 1-4 The technical solution of this utility model will be further described below.

[0018] Example 1

[0019] A sagger for sintering semiconductor ceramic materials includes: a base 1, a bottom plate 2, and an enclosing side plate 3. The upper and lower surfaces of the base 1 are provided with annular grooves 11. The lower end of the enclosing side plate 3 is placed in the annular grooves 11. The upper end of the base 1 is provided with a positioning hole 11. The lower end of the bottom plate 2 is provided with a column 21, which is inserted into the positioning hole 11. The lower surface of the bottom plate 2 is attached to the upper surface of the base 1 and is located inside the enclosing side plate 3. The four corners of the bottom plate 2 and the four corners of the enclosing side plate 3 are all rounded corners. The four sides of the enclosing side plate 3 are provided with ventilation openings 31 arranged in an array. The cross-section of the ventilation opening 31 is an hourglass cross-section, and the width of the middle throat of the ventilation opening 31 is smaller than the width of the two sides.

[0020] like Figures 1-4 As shown, the sagger in this embodiment adopts a detachable and modular structure, which is composed of a base, a bottom plate, and enclosing side plates. The annular grooves on the upper and lower end faces of the base provide positioning support for the enclosing side plates. The width of the grooves is precisely matched with the thickness of the side plates to form a stable fitting structure. At the same time, the closed contour of the annular grooves can guide the kiln airflow to rise evenly along the outside of the side plates, avoiding the airflow turbulence problem at the bottom of the traditional fixed side plates. The four corners of the bottom plate and the enclosing side plates are all rounded (not traditional right angles). The radius of the rounded corners is optimized according to fluid dynamics simulation, so that the streamline curvature is continuous when the high-temperature airflow flows through the corners, eliminating the vortex area at the right angles, reducing the boundary layer thermal resistance, and improving the convective heat transfer efficiency in the corner areas. The ventilation opening of the enclosing side plates adopts an hourglass section with a narrow throat. Based on the Venturi effect, when the kiln airflow flows in from the outer opening (wide opening), it is accelerated through the throat (narrow opening) to form a high-speed jet, and then diffuses into the interior of the sagger from the inner opening (wide opening). During this process, the high-speed jet directly scours the central area of ​​the sagger, while the low-speed airflow in the diffuser section evenly covers the edges and corners, forming a composite thermal field of "strong heat transfer in the center and stable heat transfer at the edges".

[0021] During sintering, the sagger and raw materials can be vented in time through the reserved ventilation openings, allowing the raw materials to fully contact (or react) with the gas in the furnace and undergo complete decomposition. Through the synergistic effect of the rounded corners and hourglass-shaped ventilation holes, the maximum temperature difference between the inner corners and the central area of ​​the sagger is reduced, and the standard deviation of the sintering density of the semiconductor ceramic material is reduced, effectively improving the quality and performance of the product.

[0022] The base plate and the base adopt a column-positioning hole plug-in detachable structure. The base plate can be designed in various specifications such as planar, grooved, and grid types according to the shape of the semiconductor ceramic material (such as sheet, block, powder) or sintering process requirements.

[0023] As a further preferred embodiment, the four sides of the enclosing side plate 3 are staggered with adjacent rows of ventilation openings 31. The staggered arrangement of adjacent rows of openings with a 1 / 2 hole spacing creates a three-dimensional crossflow field within the sagger: the jet from the previous row of openings covers the left area, and the jet from the next row of openings covers the right area. After the airflow collides in the central area of ​​the sagger, it forms a spiraling vortex. The vortex intensity is higher than that of the traditional arrangement. The vortex drives the complete mixing of gas within the sagger, further eliminating the temperature gradient difference in the height direction.

[0024] As a further preferred embodiment, the inner opening diameter of the ventilation opening 31 is D1, the outer opening diameter of the ventilation opening 31 is D2, and the minimum throat diameter of the ventilation opening 31 is D3, satisfying: D1 ≤ D2 ≤ 1.5D1, 0.4D1 ≤ D3 ≤ 0.7D1; the throat length of the ventilation opening is L, satisfying: 10mm ≤ L ≤ 20mm; the transition radius R1 between the inner opening and the throat satisfies: 3mm ≤ R1 ≤ 5mm; and the transition radius R2 between the inner opening and the throat satisfies: 5mm ≤ R2 ≤ 8mm.

[0025] The ratio of the minimum throat diameter (D3) to the inner and outer opening diameters (D1, D2) is controlled at 0.4~0.7, which avoids airflow obstruction caused by an excessively narrow throat (excessive flow velocity can easily lead to turbulent energy consumption) and ensures a significant Venturi effect. The transition arc between the inner opening and the throat (R1=3~5mm) adopts a tapering arc to reduce airflow separation loss; the transition arc between the outer opening and the throat (R2=5~8mm) adopts a expanding arc to guide the airflow to diffuse more smoothly.

[0026] As a further preferred embodiment, four sets of positioning holes 11 are symmetrically arranged with the column 2. The four sets of symmetrically distributed positioning holes and the column form a rigid insertion structure, and the base plate achieves precise installation through four-point support.

[0027] The preferred embodiments of this utility model have been described in detail above. It should be understood that those skilled in the art can make numerous modifications and variations based on the concept of this utility model without creative effort. Therefore, all technical solutions that can be obtained by those skilled in the art based on the concept of this utility model through logical analysis, reasoning, or limited experimentation on the basis of existing technology should be within the scope of protection defined by the claims.

Claims

1. A sagger for sintering semiconductor ceramic materials, characterized in that, include: The system comprises a base, a bottom plate, and enclosing side plates. The upper and lower surfaces of the base are provided with annular grooves. The lower end of the enclosing side plate is placed within the annular grooves. The upper end of the base is provided with positioning holes. The lower end of the bottom plate is provided with columns that are inserted into the positioning holes. The lower end of the bottom plate is fitted against the upper end of the base and located inside the enclosing side plates. The four corners of the bottom plate and the four corners of the enclosing side plates are rounded corners. The four sides of the enclosing side plates are arranged in an array with ventilation openings. The cross-section of the ventilation openings is an hourglass cross-section, and the width of the throat in the middle of the ventilation opening is smaller than the width of the two sides.

2. The sagger for sintering semiconductor ceramic materials according to claim 1, characterized in that, The ventilation openings on the four sides of the enclosed side panel are staggered.

3. The sagger for sintering semiconductor ceramic materials according to claim 1, characterized in that, The inner opening diameter of the ventilation opening is D1, the outer opening diameter is D2, and the minimum throat diameter of the ventilation opening is D3, satisfying: D1 ≤ D2 ≤ 1.5D1, 0.4D1 ≤ D3 ≤ 0.7D1. The throat length of the ventilation opening is L, satisfying: 10mm ≤ L ≤ 20mm. The transition radius R1 between the inner opening and the throat satisfies: 3mm ≤ R1 ≤ 5mm. The transition radius R2 between the inner opening and the throat satisfies: 5mm ≤ R2 ≤ 8mm.

4. The sagger for sintering semiconductor ceramic materials according to claim 1, characterized in that, The positioning holes are arranged in four sets symmetrically with the column.

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