Grid resistance plate

Abstract

The utility model discloses a grid resistance plate which comprises a circuit substrate and a plurality of resistance modules, each resistance module is connected between a driving plate connecting end and a switching tube connecting end on the circuit substrate, a driving plate is connected with the driving plate connecting end, and each SiC MOSFET is connected with the switching tube connecting end. The driving board can be connected with the control ends of the SiC MOSFETs at the same time through one driving board connecting end on the circuit substrate, so that the SiC MOSFETs are synchronously controlled, the structure is stable, in addition, due to the fact that the resistor modules are arranged between the driving board and the SiC MOSFETs respectively, when the driving board controls the SiC MOSFETs, the charging and discharging time of grid capacitors of the SiC MOSFETs can be prolonged, and the service life of the SiC MOSFETs is prolonged. And furthermore, the switching speed of each SiC MOSFET is reduced.

Description

Technical Field

[0001] This utility model relates to the field of power electronics technology, and in particular to a gate resistor plate. Background Technology

[0002] Silicon carbide (SiC) MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are widely used in high-power power supply applications due to their high switching speed, low on-resistance, and high temperature resistance. However, their high switching speed can also cause gate oscillation, voltage spikes, and electromagnetic interference. Therefore, a gate resistor is added between the SiC MOSFET and the driver board. By increasing the charging time constant of the gate capacitance of the SiC MOSFET by the driver board, the switching speed of the SiC MOSFET can be reduced, thereby suppressing gate oscillation, reducing voltage spikes, and minimizing electromagnetic interference.

[0003] However, existing technologies mainly focus on the design of gate resistor plates for half-bridge packages containing two SiC MOSFETs connected in series. That is, the gate resistor is pre-welded into the drive circuit on the gate resistor plate. By simply connecting the drive board and the half-bridge package to the two ends of the drive circuit on the gate resistor plate, the gate resistor can be connected between the drive board and the SiC MOSFET. However, the two SiC MOSFETs in the half-bridge package have different drive signals, that is, independent drive circuits need to be set on the gate resistor plate so that the drive board can output different drive signals through different drive circuits.

[0004] With increasing power demands, multiple SiC MOSFETs need to be connected in parallel to increase the current in the circuit. A driver board outputs a drive signal to synchronously control each parallel SiC MOSFET. However, existing gate resistors cannot be directly applied to the parallel SiC MOSFETs. The existing gate resistors must be split, and each split portion must be soldered to one of the parallel SiC MOSFETs. The drive circuits of each gate resistor portion are then connected to the driver board to achieve synchronous control of the SiC MOSFETs by the driver board outputting a drive signal. Therefore, this connection method lacks stability. If bumps or other abnormalities occur during transportation after soldering, the circuit may break, preventing the driver board from properly controlling the SiC MOSFETs and potentially causing more serious adverse consequences for the entire system. Utility Model Content

[0005] The purpose of this invention is to provide a gate resistor plate. The driver board can simultaneously connect to the control terminals of each SiC MOSFET through a driver board connection terminal on the circuit board, thereby synchronously controlling each SiC MOSFET and achieving structural stability. In addition, since each resistor module is respectively set between the driver board and each SiC MOSFET, the charging and discharging time of the gate capacitance of each SiC MOSFET can be increased when the driver board controls each SiC MOSFET, thereby reducing the switching speed of each SiC MOSFET.

[0006] To solve the above-mentioned technical problems, this utility model provides a gate resistor board, including a circuit board and multiple resistor modules;

[0007] The circuit board includes a first side and a second side. The first side is provided with a driver board connection terminal for connecting to the output terminal of the driver board. The second side is provided with multiple switch transistor connection terminals for connecting to the control terminals of each SiC MOSFET.

[0008] Each resistor module corresponds one-to-one with each of the switching transistors. The first end of each resistor module is connected to the driver board connection terminal; the second end of each resistor module is connected to the corresponding switching transistor connection terminal.

[0009] Preferably, the drive board connection terminal includes a drive signal receiving terminal and an enable receiving terminal, wherein the drive signal receiving terminal is connected to the drive terminal of the drive board, and the enable receiving terminal is connected to the enable terminal of the drive board.

[0010] The switching transistor connection terminal includes a drive signal output terminal and an enable output terminal. The drive signal output terminal is connected to the gate of the corresponding SiC MOSFET, and the enable output terminal is connected to the source of the corresponding SiC MOSFET.

[0011] The drive signal receiving terminal is connected to each of the drive signal output terminals through each of the resistor modules, and the enable receiving terminal is connected to each of the enable output terminals through each of the resistor modules.

[0012] Preferably, the device further includes multiple capacitor modules, each capacitor module corresponding to a connection terminal of each switch transistor, and each capacitor module is connected between a corresponding drive signal output terminal and an enable output terminal.

[0013] Preferably, the resistor module includes a gate resistor module and a source resistor module;

[0014] The gate resistor module is connected between the drive signal receiving terminal and the corresponding drive signal output terminal.

[0015] The source resistor module is connected between the enable receiver and the corresponding enable output.

[0016] Preferably, the gate resistor module includes a plurality of gate resistors connected in parallel.

[0017] Preferably, the device further includes multiple protection resistor modules, each of which corresponds one-to-one with the connection terminal of each of the switching transistors, and each of the protection resistor modules is connected between the corresponding drive signal output terminal and the enable output terminal.

[0018] Preferably, it also includes a plurality of bidirectional TVS diodes, each of which corresponds to a connection terminal of a switching transistor, and each of the bidirectional TVS diodes is connected between a corresponding drive signal output terminal and an enable output terminal.

[0019] Preferably, the drive board connection end and the switch tube connection end are one of the following: pin, board socket, solder pad, and crimp terminal.

[0020] Preferably, the circuit board further includes a conductive line layer, which is embedded inside or on the surface of the circuit board and is used to connect the first end of the resistor module to the connection end of the driver board, and to connect the second end of each resistor module to the corresponding connection end of the switch tube.

[0021] Preferably, the second side of the circuit board includes a plurality of protruding structures, each of the protruding structures extending outward from the second side, and the distance between any two adjacent protruding structures is not less than a preset distance; each of the switch tube connection terminals is respectively disposed on each of the protruding structures.

[0022] This application provides a gate resistor plate, including a circuit board and multiple resistor modules. Each resistor module is connected between a driver board connection terminal on the circuit board and a switch connection terminal. The driver boards are connected to each other, and each SiC MOSFET is connected to the switch connection terminal. Based on this, the driver board can simultaneously connect to the control terminals of each SiC MOSFET through one driver board connection terminal on the circuit board, thereby synchronously controlling each SiC MOSFET. The structure is stable. In addition, since each resistor module is respectively disposed between the driver board and each SiC MOSFET, the charging and discharging time of the gate capacitance of each SiC MOSFET can be increased when the driver board controls each SiC MOSFET, thereby reducing the switching speed of each SiC MOSFET. Attached Figure Description

[0023] To more clearly illustrate the embodiments of this utility model, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0024] Figure 1 A schematic diagram of the structure of a gate resistor plate provided in this application;

[0025] Figure 2 This is a schematic diagram of SiC MOSFET connections in a half-bridge package in the prior art;

[0026] Figure 3 This is a schematic diagram of a half-bridge package in the prior art;

[0027] Figure 4 This is a schematic diagram of a SiC MOSFET in a single SiC MOSFET package in the prior art;

[0028] Figure 5 This is a schematic diagram of a single SiC MOSFET package in the prior art;

[0029] Figure 6 A schematic diagram of the transmission of a drive signal provided in this application;

[0030] Figure 7 A schematic diagram of a gate resistor plate with a protruding structure provided for this application;

[0031] Figure 8 A schematic diagram illustrating the connection between a gate resistor plate and a single SiC MOSFET package provided in this application;

[0032] Figure 9 A schematic diagram of the front side of a gate resistor board provided in this application;

[0033] Figure 10 This application provides a schematic diagram of the back side of a gate resistor board on a PCB.

[0034] Figure 11 This is a circuit diagram of a gate resistor plate provided in this application. Detailed Implementation

[0035] The core of this invention is to provide a gate resistor plate. The driver board can simultaneously connect to the control terminals of each SiC MOSFET through a driver board connection terminal on the circuit board, thereby synchronously controlling each SiC MOSFET and achieving structural stability. In addition, since each resistor module is respectively set between the driver board and each SiC MOSFET, the charging and discharging time of the gate capacitance of each SiC MOSFET can be increased when the driver board controls each SiC MOSFET, thereby reducing the switching speed of each SiC MOSFET.

[0036] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.

[0037] Please refer to Figure 1 , Figure 1 A schematic diagram of a gate resistor plate provided in this application includes a circuit board 101 and multiple resistor modules 201;

[0038] The circuit board 101 includes a first side and a second side. A driver board connection terminal 21 is provided on the first side for connecting to the output terminal of the driver board. A plurality of switch transistor connection terminals 22 are provided on the second side for connecting to the control terminals of each SiC MOSFET.

[0039] Each resistor module 201 corresponds one-to-one with each switch transistor connection terminal 22. The first end of each resistor module 201 is connected to the driver board connection terminal 21; the second end of each resistor module 201 is connected to the corresponding switch transistor connection terminal 22.

[0040] Existing gate resistors are typically used in half-bridge packages, meaning they have multiple drive circuits connected to different SiC MOSFETs within the half-bridge package. This allows the drive board to independently control each SiC MOSFET, as half-bridge packages are commonly used in inverter circuits where the two SiC MOSFETs do not turn on or off simultaneously. Therefore, applying existing gate resistors to single-package SiC MOSFETs requires splitting the existing plate into two parts. This is especially problematic when multiple single-package SiC MOSFETs need to be connected in parallel, requiring synchronous control by the drive board. This necessitates disassembling multiple gate resistors, complicating the process and requiring soldering the drive terminals of multiple plates to enable synchronous control. However, soldering the drive terminals of multiple gate resistors is not robust, and bumps during transport can cause the solder joints to break, leading to more serious problems. Please refer to [reference needed]. Figure 2 , Figure 3 , Figure 4 and Figure 5 , Figure 2 This is a schematic diagram of SiCMOSFET connections in a half-bridge package in the prior art. Figure 3 This is a schematic diagram of a half-bridge package in the prior art. Figure 4 This is a schematic diagram of a SiC MOSFET in a single SiC MOSFET package in the prior art. Figure 5 This is a schematic diagram of a single SiC MOSFET package in the prior art. Figure 2 In the middle, terminals 1, 2, 3, 4, 5, 6, and 7 are respectively connected to... Figure 3 Terminals 1, 2, 3, 4, 5, 6, and 7 correspond one-to-one. Figure 4 In the middle, terminals 1, 2, 3, 6, and 7 are respectively connected to... Figure 3 Terminals 1, 2, 3, 6, and 7 correspond one-to-one. From Figure 2 , Figure 3 , Figure 4 and Figure 5 The dimensions and lengths shown in the table also indicate this. Figure 3 The distance between terminals 6 and 7 is 6mm. Figure 5 The distance between terminals 6 and 7 in the package is 4.5mm, which is not the same. Therefore, the gate resistor plate suitable for half-bridge packages cannot be directly applied to single SiC MOSFET packages.

[0041] Based on this, the gate resistor plate in this application is provided with multiple resistor modules 201 on the same circuit board 101. The first end of each resistor module 201 is connected to the driver board connection terminal 21 on the circuit board 101, and the second end of each resistor module 201 is connected to the corresponding switch transistor connection terminal 22. In actual use, the driver board connection terminal 21 on the circuit board 101 can be connected to the output terminal of the driver board to receive the drive signal output by the driver board. The switch transistor connection terminal 22 on the circuit board 101 can be connected to the control terminal of the corresponding SiC MOSFET. In this way, the control terminals of each SiC MOSFET can be connected in parallel. That is, the driver board can output a drive signal to the control terminals of each SiC MOSFET simultaneously through the gate resistor plate, thereby synchronously controlling each SiC MOSFET.

[0042] Furthermore, since each resistor module 201 is located between the driver board connection terminal 21 and the corresponding switch transistor connection terminal 22, the control terminal of each SiC MOSFET is connected to the resistor module 201. When the driver board outputs a drive signal to the control terminal of the SiC MOSFET, the charging and discharging time of the gate resistance of the SiC MOSFET is prolonged due to the resistor module 201, thereby reducing the switching time of the SiC MOSFET, slowing down the rise / fall rate of Vgs, and thus reducing the voltage spike caused by parasitic inductance. In addition, the resistor module 201 can introduce damping in the resonant circuit, reducing the quality factor of the resonance. Therefore, the resonance amplitude is suppressed, and the oscillation energy is dissipated as heat through the resistor. While suppressing the gate oscillation, it also reduces the intensity of the high-frequency noise source.

[0043] Based on this, in practical applications, the gate resistor plate of this application can connect multiple SiC MOSFETs on the gate resistor plate as needed to achieve parallel connection of multiple SiC MOSFETs. Since it is only necessary to connect the output terminal of the driver board to the driver board connection terminal 21 of the circuit board 101 and connect the control terminal of the SiC MOSFET to the switch connection terminal 22 of the circuit board 101, the number of solder joints required is small, the stability of the whole system is high, and the probability of solder joints breaking when subjected to bumps is also smaller.

[0044] In summary, the driver board in this application can simultaneously connect to the control terminals of each SiC MOSFET through a driver board connection terminal 21 on the circuit board 101, thereby synchronously controlling each SiC MOSFET and achieving structural stability. Furthermore, since each resistor module 201 is respectively disposed between the driver board and each SiC MOSFET, the charging and discharging time of the gate capacitance of each SiC MOSFET can be increased when the driver board controls each SiC MOSFET, thereby reducing the switching speed of each SiC MOSFET.

[0045] Based on the above embodiments:

[0046] In a preferred embodiment, the driver board connection terminal 21 includes a drive signal receiving terminal and an enable receiving terminal. The drive signal receiving terminal is connected to the drive terminal of the driver board, and the enable receiving terminal is connected to the enable terminal of the driver board.

[0047] The switching transistor connection terminal 22 includes a drive signal output terminal and an enable output terminal. The drive signal output terminal is connected to the gate of the corresponding SiC MOSFET, and the enable output terminal is connected to the source of the corresponding SiC MOSFET.

[0048] The drive signal receiver is connected to each drive signal output terminal through each resistor module 201, and the enable receiver is connected to each enable output terminal through each resistor module 201.

[0049] Since SiC MOSFETs are voltage-controlled devices, their on / off state is determined by the gate-source voltage Vgs. Therefore, the driver board transmits the drive signal to the gate of the SiC MOSFET through the drive signal input and output terminals on the circuit board 101, thereby adjusting the amplitude and timing of Vgs and directly controlling the conductivity state of the drain-source channel. Furthermore, when it is not necessary to control the SiC MOSFET's on-state, the source of each SiC MOSFET can be left floating. When it is necessary to control the SiC MOSFET's on-state, the driver inputs an enable signal to the drive circuit on the source side, controlling the enabled / disabled state of the SiC MOSFET, thus coordinating with the output of the drive signal to control the on / off state of the SiC MOSFET.

[0050] It should be noted that the arrangement of the drive signal receiving terminal and the enable receiving terminal on the circuit board 101 is based on the position between the drive terminal and the enable terminal on the drive board. The arrangement of the drive signal output terminal and the enable output terminal is based on the position between the gate and the source on the SiC MOSFET package structure. For example, the commonly used SiC MOSFET package is a 34mm package, meaning the width of the SiC MOSFET package structure is 34mm. The distance between the terminals on the SiC MOSFET package that are connected to the gate and the source is 4.5mm. Therefore, the distance between the drive signal output terminal and the enable output terminal on the circuit board 101 of the gate resistor plate is also 4.5mm. This facilitates the connection of the SiC MOSFET on the circuit board 101. When several SiC MOSFETs need to be connected to the circuit board 101, the two terminals on the SiC MOSFET package that are connected to the gate and the source can be directly bonded to the drive signal output terminal and the enable output terminal on the circuit board 101 without the need for external leads. This improves the stability of the connection and facilitates the connection of the SiC MOSFET. The MOSFET is removed from the circuit board 101.

[0051] Please refer to Figure 6 , Figure 6 This is a schematic diagram of the transmission of a drive signal provided in this application. Taking three SiC MOSFETs connected in parallel as an example, E0 is the enable signal input terminal, G0 is the drive signal input terminal, E1, E2, and E3 are the enable signal output terminals, and G1, G2, and G3 are the drive signal output terminals.

[0052] In a preferred embodiment, the system further includes multiple capacitor modules, each capacitor module corresponding to a connection terminal 22 of a switching transistor, and each capacitor module is connected between a corresponding drive signal output terminal and an enable output terminal.

[0053] Because SiC MOSFETs have extremely fast switching speeds, parasitic inductances in the drive circuit, such as trace inductance and package inductance on the circuit board 101, can easily form an LC resonant circuit with the gate capacitance of the SiC MOSFET itself. This causes the gate voltage to oscillate at high frequencies during the switching instant of the SiC MOSFET. The oscillation may lead to false triggering or gate overvoltage damage. In addition, it can also cause different gate voltage oscillation frequencies for each SiC MOSFET, which may lead to asynchronous switching or the superposition of high-frequency noise. When the drain voltage of a SiC MOSFET changes abruptly and is coupled to the gate of the SiC MOSFET through the Miller capacitance, since all the parallel SiC MOSFETs share a single drive signal, the shared drive circuit may interfere with the gate voltage of other parallel devices.

[0054] Therefore, in this embodiment, a separate capacitor module is provided for each SiC MOSFET, forming an independent RC damping network with its respective resistor module 201 to suppress local resonance. In addition, the capacitor module directly filters out the high-frequency noise of the gate circuit of a single SiC MOSFET, preventing noise from propagating to other SiC MOSFETs through the shared drive circuit.

[0055] It should be noted that the capacitor module can be a single capacitor, with each capacitor positioned between the gate and source of the corresponding SiC MOSFET. That is, the first end of the capacitor is connected to the corresponding drive signal output terminal, and the second end is connected to the corresponding enable output terminal. The capacitor is only soldered between the drive signal output terminal and the enable output terminal connected to the SiC MOSFET if the corresponding drive signal output terminal and the enable output terminal are connected to the SiC MOSFET, in order to reduce costs.

[0056] Furthermore, for existing gate resistor boards, if they are to be connected to a single SiC MOSFET package, capacitors need to be soldered between the drive signal output terminal and the enable signal output terminal on the split gate resistor board. If there are many SiC MOSFETs connected in parallel, the soldered capacitors also need to be connected in series through wire harnesses, which increases the installation complexity and the risk of use, such as poor soldering, poor contact, and electromagnetic interference. In this application, the capacitor module is directly soldered onto the circuit board 101, eliminating the need for wire harness connections and improving the stability of the connection.

[0057] In a preferred embodiment, the resistor module 201 includes a gate resistor module and a source resistor module;

[0058] The gate resistor module is connected between the drive signal receiving terminal and the corresponding drive signal output terminal;

[0059] The source resistor module is connected between the enable receiver and the corresponding enable output.

[0060] In this embodiment, the resistor module 201 includes a gate resistor module and a source resistor module. The gate resistor module is connected between the drive signal receiving terminal and the corresponding drive signal output terminal on the circuit board 101 to reduce the current rise rate at the gate of the SiC MOSFET. The source resistor module is connected between the enable receiving terminal and the corresponding enable output terminal on the circuit board 101 to reduce the current rise rate at the source of the SiC MOSFET.

[0061] Specifically, the gate resistor module and the gate capacitor form an RC time constant, directly affecting the charging and discharging speed of the gate voltage. Increasing the resistance of the gate resistor module can slow down the switching speed, reduce the voltage / current change rate, and reduce electromagnetic interference (EMI) and voltage spikes. Parasitic inductance in the drive circuit and the gate capacitor may form an LC resonant circuit, causing high-frequency oscillation of the gate voltage. The setting of the gate resistor module can effectively suppress oscillation by increasing damping and reducing the resonant quality factor. During the switching process of SiC MOSFET, the drain-gate capacitance of SiC MOSFET is amplified through the Miller effect, resulting in a prolonged gate voltage plateau period. The setting of the gate resistor module can limit the charging and discharging current of the Miller capacitance, shorten the plateau period, and reduce switching losses and the risk of false triggering.

[0062] In a preferred embodiment, the gate resistor module includes a plurality of gate resistors connected in parallel.

[0063] The gate resistor module in this embodiment includes multiple gate resistors connected in parallel, so that each gate resistor can shunt current, reduce heat generation on the gate resistor, improve the lifespan of the gate resistor, and reduce the risk of fire.

[0064] In a preferred embodiment, the system further includes multiple protection resistor modules, each of which corresponds one-to-one with the connection terminal 22 of each switching transistor, and each protection resistor module is connected between the corresponding drive signal output terminal and enable output terminal.

[0065] Considering that the high switching speed of SiC MOSFETs can cause sudden changes in drain voltage and couple to the gate through Miller capacitance, resulting in a significant rise in gate voltage, if the gate-source voltage exceeds the threshold voltage when the driver board does not output a drive signal to control the SiC MOSFET's turn-on, the SiC MOSFET may unexpectedly turn on. By placing a protection resistor module between the gate and source of the SiC MOSFET, a fast discharge path for the gate charge can be provided, reducing the amplitude of the coupling voltage and ensuring that the gate-source voltage quickly drops to a safe level (such as 0V or negative voltage), thus preventing the SiC MOSFET from being mistakenly turned on.

[0066] Specifically, when the driver board does not output an enable signal, the SiC MOSFET should be in the off state, with the source of the SiC MOSFET floating. If the gate voltage of the SiC MOSFET rises abnormally, the gate-source voltage of the SiC MOSFET exceeds the threshold voltage, and the SiC MOSFET will abnormally turn on without the control of the driver board. The setting of the protection resistor module can pull the potential of the gate of the SiC MOSFET down to the same level as the source when the driver board does not output an enable signal, that is, when the source of the SiC MOSFET is floating. Even if there is interference that causes the gate voltage of the SiC MOSFET to rise abnormally, it will be pulled down to the source voltage by the protection resistor module to avoid the SiC MOSFET from being mis-turned on.

[0067] In a preferred embodiment, the device further includes a plurality of bidirectional TVS diodes, each bidirectional TVS diode corresponding to a connection terminal 22 of a switching transistor, and each bidirectional TVS diode being connected between a corresponding drive signal output terminal and an enable output terminal.

[0068] Considering that the high switching speed of SiC MOSFETs can easily cause voltage spikes in the gate circuit due to parasitic inductance, which may exceed the gate-source breakdown voltage limit and lead to gate oxide breakdown, a bidirectional TVS diode is provided between the gate and source of each SiC MOSFET connected to the circuit board 101. The bidirectional TVS diode (Transient Voltage Suppressor) limits the gate-source voltage within a safe range through its fast clamping function, preventing overvoltage damage to the SiC MOSFET.

[0069] Furthermore, the parasitic parameter differences among parallel SiC MOSFETs can form independent LC resonant circuits, triggering high-frequency oscillations. Switching noise from one SiC MOSFET can couple to other SiC MOSFETs through a shared drive circuit, potentially causing false triggering of those MOSFETs. In contrast, the low clamping impedance of a bidirectional TVS diode can absorb high-frequency energy, dampen oscillations, and block the propagation path of noise.

[0070] It should also be noted that the differences in gate-source threshold voltage and gate capacitance among the parallel SiC MOSFETs may lead to uneven dynamic current sharing, with some SiC MOSFETs experiencing higher voltage stress. A bidirectional TVS diode clamps the gate-source voltage of each SiC MOSFET, forcing their dynamic voltages to become more uniform and reducing the impact of parameter dispersion.

[0071] Furthermore, voltages in the external environment, such as human discharge and lightning surges, can introduce high-voltage transient pulses into the SiC MOSFET through the drive circuit, directly threatening the gate insulation layer of the SiC MOSFET. As the last line of defense, the bidirectional TVS diode immediately reduces its impedance when a large instantaneous voltage is present, absorbing the instantaneous energy and protecting the gate structure of the SiC MOSFET.

[0072] In a preferred embodiment, the driver board connection terminal 21 and the switch tube connection terminal 22 are one of the following: pins, board sockets, pads, and crimp terminals.

[0073] Considering the significant differences in connection requirements across various application scenarios, for example, for scenarios suitable for industrial equipment, test interfaces, etc., requiring frequent plugging and unplugging or high mechanical strength, pins can be selected as the driver board connection terminal 21 and the switch connection terminal 22; for scenarios facilitating modular design and simplified maintenance, board sockets can be selected as the driver board connection terminal 21 and the switch connection terminal 22; for compact consumer electronic devices using high-density PCBs (Printed Circuit Boards), such as mobile phones and IoT (Internet of Things) devices, pads can be selected as the driver board connection terminal 21 and the switch connection terminal 22; for scenarios requiring vibration resistance and high temperature resistance, suitable for harsh environments such as automotive electronics or aerospace, crimp terminals can be selected as the driver board connection terminal 21 and the switch connection terminal 22. Furthermore, to flexibly match production processes, for high-volume production scenarios, pads are suitable for automated SMT (Surface Mount Technology) mounting, reducing unit costs; while for small-batch customized production scenarios, pins or crimp terminals facilitate manual assembly, reducing equipment investment.

[0074] Furthermore, the pins are highly vibration-resistant, making them suitable for mobile devices or automotive environments; the crimp terminals are fatigue-free and resistant to temperature cycling; the pads have low contact resistance, making them suitable for high-frequency signal transmission; and the board-type sockets support shielding designs to reduce EMI. Therefore, users can select the appropriate terminals according to their specific needs.

[0075] In a preferred embodiment, the circuit board 101 further includes a conductive line layer embedded inside or on the surface of the circuit board 101, which is used to connect the first end of the resistor module 201 to the driver board connection end 21 and connect the second end of each resistor module 201 to the corresponding switch tube connection end 22.

[0076] By pre-arranging conductive lines in the circuit board 101, more connection terminals are brought out for the drive board connection terminal 21. Each resistor module 201 can be connected to the corresponding drive board connection terminal 21, and then connected to the two terminals of the drive board through the conductive lines. This avoids the connection between the drive board connection terminal 21 and the resistor module 201, and between the resistor module 201 and the corresponding switch tube connection terminal 22, through exposed wires, thus improving the stability of the connection between the terminals.

[0077] In a preferred embodiment, the second side of the circuit board 101 includes a plurality of protruding structures, each protruding structure extending outward from the second side, and the distance between any two adjacent protruding structures is not less than a preset distance; each switch tube connection terminal 22 is respectively disposed on each protruding structure.

[0078] Considering that SiC MOSFET packaging structures typically include mounting holes, which are through-holes in corresponding positions where screws or rivets are used to mount the SiC MOSFET packaging structure, and that mounting holes are usually located near the terminals connecting the gate and source of the SiC MOSFET, this application extends multiple protruding structures on the second side of the circuit board 101, and each switch transistor connection terminal 22 is respectively disposed on each protruding structure, and the distance between any two adjacent protruding structures is not less than a preset distance, in order to reserve space for the mounting holes of the SiC MOSFET and avoid obstructing the mounting holes.

[0079] It should be noted that the preset distance can be designed according to the diameter of the mounting hole, so as not to obstruct the mounting hole.

[0080] in, Figure 3 The dimensions of the middle half-bridge package are 62mm, meaning the width of the half-bridge package is 62mm. Its mounting holes are located at the four corners of the half-bridge package. Figure 3 In the diagram, 4 and 5 represent the gate and source terminals of one of the SiC MOSFETs in the half-bridge package, and the distance between 4 and 5 is 6mm. 6 and 7 represent the gate and source terminals of the other SiC MOSFET in the half-bridge package, and the distance between 6 and 7 is also 6mm. Since the mounting holes are located on both sides of 4, 5, 6 and 7, the distance between 5 and 7 is 15mm. Figure 5 The package size is 34mm, which means the package width is 34mm. Figure 5In the diagram, 6 and 7 represent the gate and source terminals of the SiC MOSFET in a single SiC MOSFET package, respectively, with a distance of 4.5 mm between them. The mounting hole is located in the middle of the wide side and has a diameter of 11 mm. Based on this, the distance between the gate and source terminals of the SiC MOSFET in a half-bridge package is greater than that in a single SiC MOSFET package. Therefore, the gate and source terminals of a single SiC MOSFET package cannot be directly bonded to the drive signal output and enable signal output terminals on the gate resistor board used in existing half-bridge packages. Instead, exposed wires need to be brought out for bonding, resulting in insufficient bonding stability and easy breakage. Furthermore, if the existing gate resistor board is not split, it will block the mounting holes of the single SiC MOSFET package. Even if the gate resistor board is split, a 7.5 mm margin will be left at the connection terminals to prevent exposure, but this will still block the mounting holes of the single SiC MOSFET package. In this application, the drive signal output terminal and the enable signal output terminal are led out from the protruding structure and set according to the distance between the gate connection terminal and the source connection terminal of a single SiC MOSFET, so that the gate connection terminal and the source connection terminal of a single SiC MOSFET can be attached to the drive signal output terminal and the enable signal output terminal on the circuit board 101. Space is reserved for mounting holes to improve connection stability and facilitate the installation of SiC MOSFET packages.

[0081] Please refer to Figure 7 and Figure 8 , Figure 7 This is a schematic diagram of a gate resistor plate with a protruding structure provided in this application. Figure 8 This is a schematic diagram illustrating the connection between a gate resistor plate and a single SiC MOSFET package, as provided in this application. It can be seen that, based on... Figure 7 The dimensions shown are in Figure 8 After the single SiC MOSFET package is connected to the corresponding gate resistor plate, the mounting holes are not blocked. Figure 7 The dimensions shown are for illustrative purposes only and the dimensions of the gate resistor plate can be modified as needed.

[0082] Please refer to Figure 9 , Figure 10 and Figure 11 , Figure 9 This is a schematic diagram of the front side of a PCB for a gate resistor board provided in this application. Figure 10 This is a schematic diagram of the back side of a gate resistor board provided in this application. Figure 11The circuit diagram of a gate resistor board provided in this application shows that E0 is the enable signal input terminal, G0 is the drive signal input terminal, E1, E2 and E3 are the enable signal output terminals, and G1, G2 and G3 are the drive signal output terminals; R1 and R2 are two gate resistors connected in parallel in the first gate resistor module, R3 is the source resistor in the first source resistor module, R4 is the resistor in the first protection resistor module, C1 is the first capacitor module, and D1 is the first bidirectional TVS diode; R5 and R6 are two gate resistors connected in parallel in the second gate resistor module, R7 is the source resistor in the second source resistor module, R11 is the resistor in the second protection resistor module, C2 is the second capacitor module, and D2 is the second bidirectional TVS diode; R9 and R8 are two gate resistors connected in parallel in the third gate resistor module, R10 is the source resistor in the third source resistor module, R12 is the resistor in the third protection resistor module, C3 is the third capacitor module, and D3 is the third bidirectional TVS diode. In the above description, this application uses three SiC MOSFETs connected in parallel as an example. In practical applications, more SiC MOSFETs can be connected in parallel as needed, and this application does not limit this.

[0083] In addition, please refer to the conductive line layer in the circuit board 101. Figure 9 and Figure 10 As shown.

[0084] It should also be noted that, in this specification, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0085] The above description of the disclosed embodiments enables those skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A gate resistor plate, characterized in that, Includes a circuit board and multiple resistor modules; The circuit board includes a first side and a second side. The first side is provided with a driver board connection terminal for connecting to the output terminal of the driver board. The second side is provided with multiple switch connection terminals for connecting to the control terminals of each SiC MOSFET. Each resistor module corresponds one-to-one with each of the switching transistors. The first end of each resistor module is connected to the driver board connection terminal; the second end of each resistor module is connected to the corresponding switching transistor connection terminal.

2. The gate resistor plate as described in claim 1, characterized in that, The drive board connection terminal includes a drive signal receiving terminal and an enable receiving terminal. The drive signal receiving terminal is connected to the drive terminal of the drive board, and the enable receiving terminal is connected to the enable terminal of the drive board. The switching transistor connection terminal includes a drive signal output terminal and an enable output terminal. The drive signal output terminal is connected to the gate of the corresponding SiC MOSFET, and the enable output terminal is connected to the source of the corresponding SiC MOSFET. The drive signal receiving terminal is connected to each of the drive signal output terminals through each of the resistor modules, and the enable receiving terminal is connected to each of the enable output terminals through each of the resistor modules.

3. The gate resistor plate as described in claim 2, characterized in that, It also includes multiple capacitor modules, each capacitor module corresponding to a connection terminal of each switch transistor, and each capacitor module is connected between a corresponding drive signal output terminal and an enable output terminal.

4. The gate resistor plate as described in claim 2, characterized in that, The resistor module includes a gate resistor module and a source resistor module; The gate resistor module is connected between the drive signal receiving terminal and the corresponding drive signal output terminal. The source resistor module is connected between the enable receiver and the corresponding enable output.

5. The gate resistor plate as described in claim 4, characterized in that, The gate resistor module includes several gate resistors connected in parallel.

6. The gate resistor plate as described in claim 2, characterized in that, It also includes multiple protection resistor modules, each of which corresponds to a connection terminal of each of the switching transistors, and each of the protection resistor modules is connected between the corresponding drive signal output terminal and enable output terminal.

7. The gate resistor plate as described in claim 2, characterized in that, It also includes multiple bidirectional TVS diodes, each of which corresponds to a connection terminal of a switching transistor, and each of the bidirectional TVS diodes is connected between a corresponding drive signal output terminal and an enable output terminal.

8. The gate resistor plate as described in claim 1, characterized in that, The drive board connection terminal and the switch tube connection terminal are one of the following: pin, board socket, solder pad, and crimp terminal.

9. The gate resistor plate as described in claim 1, characterized in that, The circuit board further includes a conductive line layer, which is embedded inside or on the surface of the circuit board and is used to connect the first end of the resistor module to the connection end of the driver board, and to connect the second end of each resistor module to the corresponding connection end of the switch tube.

10. The gate resistor plate according to any one of claims 1-9, characterized in that, The second side of the circuit board includes a plurality of protruding structures, each of which extends outward from the second side and the distance between any two adjacent protruding structures is not less than a preset distance; each of the switching transistor connection terminals is respectively disposed on each of the protruding structures.

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