MOS tube driving power supply circuit with MOS tube absorption loop
By introducing a MOSFET snubber circuit into the MOSFET drive power supply circuit, and using the RCD snubber circuit module to absorb the transformer leakage inductance spike voltage, the drive voltage is provided after rectification and filtering. This solves the problem of high cost caused by the need for a dedicated chip for the drive signal of the isolated MOSFET module, and achieves cost savings and environmental benefits.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- DONGGUAN BEIDOUXING ELECTRONIC TECH CO LTD
- Filing Date
- 2025-05-30
- Publication Date
- 2026-05-19
AI Technical Summary
Existing isolated MOSFET modules require dedicated chips to provide drive signals, resulting in high production costs.
A MOSFET drive power supply circuit with a MOSFET snubber circuit is adopted. The peak voltage generated by the leakage inductance when the transformer is turned off is absorbed by the RCD snubber circuit module and then provided to the mirror current source after rectification and filtering, replacing the dedicated chip to obtain the drive voltage.
The circuitry was simplified, saving on VCC lines and components, reducing production costs, and achieving energy conservation and emission reduction.
Smart Images

Figure CN224264961U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of MOSFET driving circuit technology, specifically to a MOSFET driving power supply circuit with a MOSFET absorption circuit. Background Technology
[0002] With the increasing demand for cloud computing servers and data centers, the demand for high-performance server power supplies has also surged. High-performance server power supplies are usually equipped with isolated MOSFET modules. The drive signals for existing isolated MOSFET modules need to be provided by dedicated chips, which are relatively expensive, increasing the production cost of isolated MOSFET modules. Utility Model Content
[0003] In view of the shortcomings of the existing technology, the purpose of this utility model is to provide a MOSFET drive power supply circuit with a MOSFET snubber circuit, so as to solve the problem of high production cost caused by the use of a dedicated chip to provide the drive signal of the existing isolated MOSFET module.
[0004] To achieve the above objectives, the technical solution adopted by this utility model is as follows:
[0005] This application provides a MOSFET drive power supply circuit with a MOSFET snubber circuit, including:
[0006] Upper winding;
[0007] Lower winding;
[0008] The RCD absorption circuit module is electrically connected to the upper winding and the lower winding, respectively;
[0009] A mirror current source is electrically connected to the RCD absorption circuit module, which is used to supply power to the mirror current source.
[0010] Furthermore, it also includes diodes D12 and D13. The upper winding is connected to the RCD snubber circuit module through diode D12, and the lower winding is connected to the RCD snubber circuit through diode D13.
[0011] Furthermore, the RCD absorption circuit includes a first capacitor C9, a second capacitor C24, and a resistor R2, which are connected in parallel.
[0012] Furthermore, the mirror current source includes a pair of bias resistors R51 and R58 with equal resistance values.
[0013] Furthermore, the capacitances of the first capacitor C9 and the second capacitor C24 are equal.
[0014] The beneficial effects of this utility model are as follows:
[0015] By employing the aforementioned MOSFET drive power supply circuit with a MOSFET snubber loop, the peak voltage generated by the leakage inductance when the transformer is turned off is absorbed by the RCD snubber circuit module. The RCD snubber circuit module rectifies and filters the absorbed current and then provides voltage to the mirror current source. The rectified MOSFET snubber loop is cleverly used to obtain the drive voltage of the isolation MOSFET. The circuit is simple and can save the cost by eliminating the need for additional VCC lines and components, thus contributing to energy conservation, emission reduction, and carbon neutrality. Attached Figure Description
[0016] Figure 1 This is a schematic diagram of the circuit principle of the MOSFET drive power supply circuit with MOSFET snubber circuit in the embodiments of this application.
[0017] Figure 2 This is a simplified equivalent circuit diagram of the output isolation in the embodiments of this application. Detailed Implementation
[0018] The present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments.
[0019] See appendix Figure 1 As shown, this embodiment provides a MOSFET drive power supply circuit with a MOSFET snubber circuit, including an upper winding CT1, a lower winding CT2, an RCD snubber circuit module, and a mirror current source.
[0020] In this embodiment, the upper and lower windings are coupled to the secondary side of the transformer. The upper winding CT1 and the lower winding CT2 work alternately (D≈0.5) and the output voltage is 12V. The voltage of each winding when it is working is approximately 12 / 0.5.
[0021] The upper winding CT1 is connected to the RCD snubber circuit module via diode D12, and the lower winding CT2 is connected to the RCD snubber circuit via diode D13. That is, the current generated by the upper and lower windings is rectified by diodes D12 and D13 and then supplied to the RCD snubber circuit module.
[0022] The RCD snubber circuit module is electrically connected to the mirror current source, and the RCD snubber circuit module is used to supply power to the mirror current source.
[0023] Reference Figure 1 As shown, in this embodiment, the RCD absorption circuit module includes a first capacitor C9, a second capacitor C24, and a resistor R2, which are connected in parallel. In some embodiments, the capacitance parameters of the first capacitor C9 and the second capacitor C24 are the same.
[0024] In some embodiments, the mirror current source includes a pair of bias resistors R51 and R58 with equal resistance values.
[0025] Reference Figure 2 The diagram shown is a simplified equivalent circuit diagram of the output isolation of the mirror current source. To better understand the MOSFET drive power supply circuit with MOSFET snubber circuit in this embodiment, its working principle will be briefly explained below.
[0026] The RCD snubber circuit module rectifies the current through diodes D12 and D13 to obtain a 24V voltage, which powers Q29. Q29 is a current mirror source, and R51 and R58 are bias resistors of equal value. When current flows through Q17, the +12VB voltage is higher than +12V, generating a current Q2_Ibc. Q1_Vbe is gradually pulled low, and Q1 enters the amplification state. The Q17_Vgs voltage gradually rises, and Q17 conducts. When the input voltage is turned off, +12VB is de-energized, while +12V is maintained by another system connected in parallel. At this time, the +12V voltage is higher than +12VB, and Q2 and Q17 are cut off to prevent backflow of voltage when connected in parallel.
[0027] The peak voltage generated by the leakage inductance when the transformer is turned off is absorbed by the RCD snubber circuit module. The RCD snubber circuit module rectifies and filters the absorbed current and then provides voltage to the mirror current source. The rectifier MOSFET snubber circuit is cleverly used to obtain the drive voltage of the isolation MOSFET. The circuit is simple and can save the circuit and components of adding a VCC to reduce costs, thus contributing to energy conservation, emission reduction and carbon neutrality.
[0028] Obviously, those skilled in the art can make various modifications and variations to this utility model without departing from its spirit and scope. Therefore, if these modifications and variations fall within the scope of the claims of this utility model and their equivalents, this utility model also intends to include these modifications and variations.
Claims
1. A MOSFET drive power supply circuit with a MOSFET snubber circuit, characterized in that, include: Upper winding; Lower winding; The RCD absorption circuit module is electrically connected to the upper winding and the lower winding, respectively; A mirror current source is electrically connected to the RCD absorption circuit module, which is used to supply power to the mirror current source.
2. The MOSFET drive power supply circuit with a MOSFET snubber circuit according to claim 1, characterized in that, It also includes diodes D12 and D13. The upper winding is connected to the RCD snubber circuit module through diode D12, and the lower winding is connected to the RCD snubber circuit through diode D13.
3. A MOSFET drive power supply circuit with a MOSFET snubber circuit according to claim 1 or 2, characterized in that, The RCD absorption circuit includes a first capacitor C9, a second capacitor C24, and a resistor R2, which are connected in parallel.
4. A MOSFET drive power supply circuit with a MOSFET snubber circuit according to claim 1, characterized in that, The mirror current source includes a pair of bias resistors R51 and R58 with equal resistance values.
5. A MOSFET drive power supply circuit with a MOSFET snubber circuit according to claim 3, characterized in that, The capacitances of the first capacitor C9 and the second capacitor C24 are equal.