Light emitting diode with in-situ integration state sensing function
By designing a light-emitting diode with in-situ integrated state sensing function, and using photolithography and etching processes to form grooves and insulating layers, an intuitive response is achieved where the light does not emit light in the absence of ultraviolet light and emits visible light after absorbing ultraviolet light. This solves the problem that existing ultraviolet detector-ultraviolet LED integrated devices are not intuitive enough, and improves safety and efficiency.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- GUANGDONG UNIV OF TECH
- Filing Date
- 2025-05-30
- Publication Date
- 2026-05-19
AI Technical Summary
Existing ultraviolet detector-ultraviolet LED integrated devices rely on current indicators to respond to deep ultraviolet light, which is not intuitive and may lead to staff misjudging the irradiation intensity, affecting health and work efficiency.
Design a light-emitting diode with in-situ integrated state sensing function. By not emitting light in the absence of ultraviolet light and emitting visible light after absorbing ultraviolet light, it can realize real-time sensing and response to the ultraviolet light state. A specific design of the light-emitting diode epitaxial structure and ohmic electrode is adopted, and the groove and insulating layer are formed by photolithography and etching processes to realize the control of the electron injection channel.
It enables intuitive real-time monitoring and response to ultraviolet light, avoiding harm to the human body from ultraviolet light and improving safety and work efficiency.
Smart Images
Figure CN224265399U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of semiconductor device technology, and more specifically, to a light-emitting diode with in-situ integrated state sensing function. Background Technology
[0002] Ultraviolet light with a emission wavelength between 200-360 nm can be applied in fields such as optical communication, sterilization and disinfection, medical health, environmental purification, and biochemical detection. In sterilization and disinfection, deep ultraviolet light sources can efficiently destroy the DNA and RNA structures of microorganisms such as bacteria and viruses, and are widely used in water treatment, air purification, medical device disinfection, and food hygiene, playing a particularly important role in public health and epidemic prevention and control. However, deep ultraviolet light also poses significant risks to the human body. Due to its high-energy characteristics, direct exposure can lead to skin burns, eye damage, and even increase the risk of skin cancer. Because deep ultraviolet light is invisible, this greatly increases the invisibility of its potential hazards, and people are often exposed to it unknowingly, further exacerbating health risks. To effectively monitor the intensity of ultraviolet light, ultraviolet photodetectors have been developed.
[0003] A Chinese patent discloses an integrated ultraviolet detector-ultraviolet LED device. When the ultraviolet LED light source is turned on, a current indicator can visually display the change in the ultraviolet detector's current. Real-time monitoring of the ultraviolet LED light source's operating status and irradiance intensity is achieved through changes in the ultraviolet detector's current, which can be observed with the naked eye. However, this integrated device requires the ultraviolet detector to be connected to a current indicator to show changes in the ultraviolet detector's current. This means that workers can only monitor the ultraviolet LED light source's operating status and irradiance intensity in real time through current changes. However, in practical applications, this device has the following problems: First, when the irradiance intensity is high, the current change may be relatively small, misleading workers into believing the irradiance intensity is low, thus potentially harming their health. Second, the need to connect a current indicator requires workers to frequently check the current indicator reading, affecting their work efficiency. Summary of the Invention
[0004] The technical problem this invention aims to solve is to overcome the shortcomings of existing ultraviolet detectors-UV LED integrated devices, which rely on current indicators to respond to deep ultraviolet light because ultraviolet light is invisible and harmful to the human body. This invention provides a light-emitting diode with in-situ integrated state sensing function. This LED has both detection and emission functions. In the absence of ultraviolet light, the device does not emit light; upon detecting external ultraviolet light, the device emits visible light. This enables real-time perception and response to the ultraviolet light status, providing a direct visible light warning effect, minimizing the harm of ultraviolet light to the human body, and improving the safety of ultraviolet light use in actual production and daily life.
[0005] The above-mentioned objective of this utility model is achieved through the following technical solution:
[0006] A light-emitting diode (LED) includes an LED epitaxial structure, a p-type ohmic electrode, and an n-type ohmic electrode. The LED epitaxial structure comprises, from bottom to top:
[0007] Substrate;
[0008] Buffer layer;
[0009] First light absorption layer;
[0010] Insertion layer;
[0011] The second light absorption layer has a groove formed on its upper surface;
[0012] The electron injection layer includes a first electron injection layer and a second electron injection layer; the first electron injection layer and the second electron injection layer are respectively located on the left and right sides of the groove; and the first electron injection layer and the second electron injection layer are not connected to each other.
[0013] And, from bottom to top, a multi-quantum well layer; an electron blocking layer; and a hole injection layer are disposed sequentially on the upper surface of the first electron injection layer;
[0014] The upper surface of the hole injection layer is provided with a p-type ohmic electrode, and the upper surface of the second electron injection layer is provided with an n-type ohmic electrode.
[0015] The principle of this utility model is as follows:
[0016] This invention features a second light-absorbing layer above an insertion layer. The upper surface of the middle portion of this second light-absorbing layer is exposed, serving as an electron injection channel. In the absence of ultraviolet light, due to the limited conductivity of the second light-absorbing layer, the negative polarization charge at the interface between the second light-absorbing layer and the insertion layer causes an electron depletion region to form in the groove area created by the first electron injection layer, the second electron injection layer, and the exposed portion of the second light-absorbing layer. The electron injection channel is disconnected, and the device does not emit light. Under ultraviolet light irradiation, the second light-absorbing layer absorbs ultraviolet light, generating a large number of electron-hole pairs. Under the influence of an electric field, a photocurrent is formed, converting the ultraviolet light signal into an electrical signal, thus enabling ultraviolet light detection. Furthermore, based on the photogenerated carrier effect, a free carrier compensation depletion region is created, opening the electron injection channel and driving the device to emit light. Therefore, visible light signal display can be achieved simultaneously with ultraviolet band detection.
[0017] Preferably, the device further includes an insulating layer that covers the upper surface of the LED epitaxial structure and exposes the p-type ohmic electrode and the n-type ohmic electrode. The insulating layer serves to prevent leakage current.
[0018] Preferably, the device further includes a reflector that covers the upper surface of the insulating layer, the upper surface of the p-type ohmic electrode and the n-type ohmic electrode, and exposes the insulating layer on the upper surface of the groove.
[0019] The function of a mirror is to reflect photons and improve light extraction efficiency.
[0020] Preferably, the first light-absorbing layer and the second light-absorbing layer are made of unintentionally doped Al. x1 Ga 1- x1 N, where x1 represents the Al component, and 0 ≤ x1 ≤ 0.5.
[0021] More preferably, the first light-absorbing layer and the second light-absorbing layer are made of GaN.
[0022] Preferably, the material of the insertion layer is Al. x2 Ga 1-x2 N, where x2 represents the Al component, and 0 ≤ x2 ≤ 1, x1 <x2。
[0023] More preferably, the material of the insertion layer is Al. 0.2 Ga 0.8 N.
[0024] Preferably, the thickness of the first light-absorbing layer is 1-3 μm.
[0025] More preferably, the thickness of the first light-absorbing layer is 1.5-2.5 μm.
[0026] Preferably, the thickness of the second light-absorbing layer is 50-400 nm.
[0027] More preferably, the thickness of the second light-absorbing layer is 150-300 nm.
[0028] Preferably, the thickness of the insertion layer is 1-100 nm.
[0029] More preferably, the thickness of the insertion layer is 10-20 nm.
[0030] Preferably, the length of the groove is the same as the length of the second light-absorbing layer; the width W2 of the groove is 5% to 50% of the width W1 of the second light-absorbing layer.
[0031] More preferably, the width W2 of the groove is 10% to 20% of the width W1 of the second light-absorbing layer.
[0032] The width of the groove affects the collection of ultraviolet light by the light-emitting diode device, thus enabling the control of visible light intensity. This allows for intuitive real-time monitoring of the ultraviolet light intensity in the ultraviolet emission system and working environment, achieving real-time monitoring and display of the ultraviolet light source intensity.
[0033] Preferably, the depth H of the groove is 10 to 50% of the thickness of the second light absorption layer.
[0034] More preferably, the depth H of the groove is 20-30% of the thickness of the second light-absorbing layer.
[0035] Preferably, the perimeter of the upper surface of the buffer layer is exposed.
[0036] More preferably, the upper surface of the buffer layer is partially exposed around its perimeter, and the exposed portion is covered by the insulating layer.
[0037] The buffer layer is exposed around its perimeter to form annular protrusions, which provides better insulation when the two devices are connected.
[0038] Preferably, the light-emitting diodes are arranged in an array.
[0039] Preferably, the substrate is made of sapphire, AlN, GaN, Si or SiC, and is classified as polar substrate or semi-polar substrate according to the epitaxial growth direction, with a substrate thickness of 2 μm-6 μm.
[0040] Preferably, the buffer layer is made of Al. x3 Ga 1-x3N, where x3 represents the Al component, and 0 ≤ x3 ≤ 1, with a thickness of 1-3 μm. For example, it can be AlN.
[0041] Preferably, the electron injection layer is made of Al. x4 Ga 1-x4 N, where x4 represents the Al component, and 0 ≤ x4 ≤ 0.5, x4 ≤ x2, with a thickness of 100-2000 nm. For example, it can be GaN. The preferred thickness is 800-1200 nm.
[0042] Preferably, the material of the multiple quantum well layer is the same as that of a conventional visible light emitting diode, such as InGaN, GaN, AlGaN, or quantum dots, with a thickness of 30-100 nm. The thickness is preferably 60-90 nm.
[0043] Preferably, the electron blocking layer is made of AlGaN and has a thickness of 5-30 nm. More preferably, the thickness is 10-20 nm.
[0044] Preferably, the hole injection layer is made of GaN and has a thickness of 10-300 nm. More preferably, the thickness is 150-250 nm.
[0045] Preferably, the insulating layer is made of SiO2 or Al2O3 and has a thickness of 1-700 nm. The thickness is preferably 400-600 nm.
[0046] Preferably, the p-type ohmic electrode is made of Ni / Au, Cr / Au, or Ni / Al, with a thickness of 10-200 nm. The thickness is preferably 20-40 nm.
[0047] Preferably, the n-type ohmic electrode is made of Al / Au, Cr / Au, or Ti / Al / Ti / Au material, with a thickness of 10-300 nm. The thickness is preferably 150-250 nm.
[0048] Preferably, the reflector is made of Al, Ag, or Au, with a thickness of 100-900 nm. More preferably, the thickness is 600-800 nm.
[0049] The above-mentioned method for fabricating a light-emitting diode includes the following steps:
[0050] S1. A buffer layer, a first light-absorbing layer, an insertion layer, a second light-absorbing layer, an electron injection layer, a multiple quantum well layer, an electron blocking layer, and a hole injection layer are epitaxially grown sequentially from bottom to top on a substrate to obtain a light-emitting diode epitaxial structure.
[0051] S2. Etch the light-emitting diode epitaxial structure obtained in step S1 until the upper surface on the right side of the electron injection layer is exposed;
[0052] S3. Partially etch the upper surface of the right side of the electron injection layer to expose part of the upper surface of the second light absorption layer, so that the electron injection layer is divided into a first electron injection layer and a second electron injection layer that are not connected and a groove is formed on the upper surface of the second light absorption layer, wherein the multi-quantum well layer covers the upper surface of the first electron injection layer;
[0053] S4. An insulating layer is grown on the upper surface of the light-emitting diode epitaxial structure obtained in step S3, and then the insulating layer on a portion of the upper surface of the hole injection layer and a portion of the upper surface of the second electron injection layer is etched to form an opening;
[0054] S5. A p-type ohmic electrode is prepared at the opening of the insulating layer on the upper surface of the hole injection layer, and an n-type ohmic electrode is prepared at the opening of the insulating layer on the upper surface of the second electron injection layer.
[0055] S6. A reflector is fabricated on the upper surface of the substrate obtained in step S5, and then the reflector covering the upper surface of the groove is etched to obtain a light-emitting diode.
[0056] In a specific implementation, step S1 can employ thin-film epitaxial growth techniques such as deposition, evaporation, or sputtering to sequentially grow a buffer layer, a first light-absorbing layer, an insertion layer, a second light-absorbing layer, an electron injection layer, a multiple quantum well layer, an electron blocking layer, and a hole injection layer on the substrate surface from bottom to top, thereby obtaining a light-emitting diode epitaxial structure. More specifically, step S1 can be performed using molecular beam epitaxy (MBE) equipment or metal-organic chemical vapor deposition (MOCVD) equipment.
[0057] In a specific implementation, steps S2 and S3 can be performed using photolithography and etching processes.
[0058] The process includes etching around the periphery of the LED epitaxial structure obtained in step S1 until a portion of the buffer layer is exposed to form a boss, which serves to achieve device isolation.
[0059] In a specific implementation, in step S4, an insulating layer can be grown using plasma-enhanced chemical vapor deposition (PECVD) equipment, and the insulating layer can be selectively perforated by an etching process to form openings in the insulating layer corresponding to the upper surface of the hole injection layer and the upper surface of the second electron injection layer.
[0060] In a specific implementation, in step S5, electron beam evaporation technology can be used to deposit p-type ohmic electrodes and n-type ohmic electrodes.
[0061] In a specific implementation, in step S6, the reflector can be prepared using electron beam evaporation technology.
[0062] In a specific implementation, the light-emitting diodes of this invention can be arranged in an array.
[0063] The light-emitting diode described above can be applied in water treatment, air purification, medical device disinfection, and food hygiene.
[0064] In the field of food hygiene, its application mainly refers to the sterilization and disinfection of food and tableware.
[0065] The light-emitting diode of this invention adopts a homogeneous integrated design of light-emitting device and detector device, which can reduce the complexity of light-emitting-detection integrated system and has the advantages of simple manufacturing process, convenient operation, high repeatability and low production cost.
[0066] In a specific implementation, the light-emitting diode is irradiated with ultraviolet light.
[0067] Compared with the prior art, the beneficial effects of this utility model are:
[0068] This utility model discloses a light-emitting diode with in-situ integrated state sensing function. The light-emitting diode has dual functions of detection and emission. In the absence of ultraviolet light, the device does not emit light. After detecting external ultraviolet light, the device emits visible light, which can intuitively realize real-time perception and response to the ultraviolet light status, realize the intuitive warning function of visible light, minimize the harm of ultraviolet light to the human body, and improve the safety of ultraviolet light use in actual production and life. Attached Figure Description
[0069] Figure 1 This is a schematic diagram of the structure of the substrate obtained in step S1 of Embodiment 1 of this utility model.
[0070] Figure 2 This is a schematic diagram of the structure of the substrate obtained in step S2 of embodiment 1 of this utility model.
[0071] Figure 3 This is a schematic diagram of the substrate obtained in step S3 of embodiment 1 of this utility model.
[0072] Figure 4 This is a schematic diagram of the substrate obtained in step S4 of embodiment 1 of this utility model.
[0073] Figure 5 This is a schematic diagram of the substrate obtained in step S5 of embodiment 1 of this utility model.
[0074] Figure 6 This is a schematic diagram of the substrate obtained in step S6 of embodiment 1 of this utility model.
[0075] Figure 7This is a schematic diagram of the structure of the light-emitting diode obtained in step S7 of embodiment 1 of this utility model.
[0076] Figure 8 This is a schematic diagram of the light-emitting area and the detection area of the light-emitting diode obtained in Embodiment 1 of this utility model.
[0077] Figure 9 This is a three-dimensional structural diagram of the array of light-emitting diode devices according to Embodiment 1 of this utility model.
[0078] Figure 10 The curves showing the relationship between the light power of the LED obtained in Example 1 and the voltage under ultraviolet light and no ultraviolet light conditions are shown.
[0079] Figure 11 This is a schematic diagram of the structure of the light-emitting diode obtained in Embodiment 6 of this utility model.
[0080] Among them, 1. substrate, 2. buffer layer, 3. first light absorption layer, 4. insertion layer, 5. second light absorption layer, 6. electron injection layer, 61. first electron injection layer, 62. second electron injection layer, 7. multiple quantum well layer, 8. electron blocking layer, 9. hole injection layer, 10. insulating layer, 11. p-type ohmic electrode, 12. n-type ohmic electrode, 13. mirror. Detailed Implementation
[0081] The present invention will be further described below with reference to specific embodiments, but the embodiments do not limit the present invention in any way. Unless otherwise stated, the raw materials and reagents used in the embodiments of the present invention are conventionally purchased raw materials and reagents.
[0082] The preparation methods involved include photolithography, etching, and metal evaporation, all of which are common processes, and the raw materials involved can be obtained through general means.
[0083] In the description of this utility model, it should be understood that the terms "center", "longitudinal", "lateral", "length value", "width value", "thickness value", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model.
[0084] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this utility model, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.
[0085] In this utility model, unless otherwise explicitly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.
[0086] In this utility model, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.
[0087] It should be noted that when an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. When an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used herein are for illustrative purposes only and do not represent the only possible implementation.
[0088] Example 1
[0089] like Figures 1-7 As shown, a light-emitting diode (LED) includes an LED epitaxial structure, a p-type ohmic electrode 11, an n-type ohmic electrode 12, an insulating layer 10, and a reflector 13. The LED epitaxial structure, from bottom to top, includes:
[0090] Substrate 1;
[0091] Buffer layer 2;
[0092] First light absorption layer 3;
[0093] Insert layer 4;
[0094] The second light absorption layer 5 has a groove on its upper surface.
[0095] The electron injection layer 6 includes a first electron injection layer 61 and a second electron injection layer 62; the first electron injection layer 61 and the second electron injection layer 62 are located on the left and right sides of the groove, respectively; and the first electron injection layer 61 and the second electron injection layer 62 are not connected to each other.
[0096] And, from bottom to top, a multi-quantum well layer 7; an electron blocking layer 8; and a hole injection layer 9 are disposed on the upper surface of the first electron injection layer 61;
[0097] The upper surface of the hole injection layer 9 is provided with a p-type ohmic electrode 11, and the upper surface of the second electron injection layer 62 is provided with an n-type ohmic electrode 12.
[0098] An insulating layer 10 covers the upper surface of the light-emitting diode epitaxial structure and exposes the p-type ohmic electrode 11 and the n-type ohmic electrode 12.
[0099] The reflector 13 covers the upper surface of the insulating layer 10, the upper surface of the p-type ohmic electrode 11 and the n-type ohmic electrode 12, and exposes the insulating layer 10 on the upper surface of the groove.
[0100] The above-mentioned method for fabricating a light-emitting diode includes the following steps:
[0101] S1. In a metal-organic chemical vapor deposition (MOCVD) furnace, substrate 1 is baked at a high temperature of 1300℃ to remove foreign matter from the surface of substrate 1. Then, from bottom to top, a buffer layer 2, a first light-absorbing layer 3, an insertion layer 4, a second light-absorbing layer 5, an electron injection layer 6, a multiple quantum well layer 7, an electron blocking layer 8, and a hole injection layer 9 are epitaxially grown on the upper surface of substrate 1 to obtain a light-emitting diode epitaxial structure. The resulting substrate is shown below. Figure 1 As shown.
[0102] S2. Using photolithography and etching processes, the edges of the light-emitting diode epitaxial structure obtained in step S1 are etched until the periphery of the buffer layer 2 is exposed to form an annular protrusion at the buffer layer 2; the resulting substrate is as follows. Figure 2 As shown.
[0103] S3. Using photolithography and etching processes, etch along one side of the substrate obtained in step S2 until the upper surface of the right side of the electron injection layer 6 is exposed; the resulting substrate is as follows: Figure 3 As shown.
[0104] S4. Using photolithography and etching processes, partially etch the upper surface of the right side of the electron injection layer 6 to expose part of the upper surface of the second light absorption layer 5, thus dividing the electron injection layer 6 into a non-connected first electron injection layer 61 and second electron injection layer 62, and forming a groove on the upper surface of the second light absorption layer 5. The multi-quantum well layer 7 partially covers the left side of the upper surface of the first electron injection layer 61, resulting in a substrate as shown. Figure 4 As shown.
[0105] S5. After growing an insulating layer 10 on the substrate obtained in step S4 using plasma-enhanced chemical vapor deposition (PECVD), the insulating layer 10 is selectively etched to create openings, forming openings in the insulating layer 10 corresponding to portions of the upper surface of the hole injection layer 9 and the upper surface of the second electron injection layer 62; the resulting substrate is as follows: Figure 5 As shown.
[0106] S6. Using electron beam evaporation, a p-type ohmic electrode 11 is deposited at the center of the opening of the insulating layer 10 on the upper surface of the hole injection layer 9, and an n-type ohmic electrode 12 is deposited at the opening of the insulating layer 10 on the upper surface of the second electron injection layer 62; the resulting substrate is as follows. Figure 6 As shown.
[0107] S7. Using electron beam evaporation, a reflector 13 is deposited on the substrate obtained in step S6, and then the upper surface of the groove is etched to cover the reflector 13; the resulting diode is as follows: Figure 7 As shown.
[0108] In step S1,
[0109] The substrate 1 is made of sapphire and has a thickness of 2 μm.
[0110] The buffer layer 2 is made of AlN and has a thickness of 2 μm.
[0111] The first light-absorbing layer 3 is made of unintentionally doped GaN and has a thickness of 1.8 μm.
[0112] The material of the insertion layer 4 is Al. 0.2 Ga 0.8 N, with a thickness of 10 nm.
[0113] The second light-absorbing layer 5 is made of unintentionally doped GaN and has a thickness of 200 nm.
[0114] The electron injection layer 6 is made of GaN and has a thickness of 1000 nm.
[0115] The multi-quantum well layer 7 is made of InGaN with a thickness of 75 nm.
[0116] The electron blocking layer 8 is made of AlGaN and has a thickness of 10 nm.
[0117] The hole injection layer 9 is made of GaN and has a thickness of 200 nm.
[0118] In step S2, the etching depth is 3295 nm;
[0119] In step S3, the etching depth is 285 nm;
[0120] In step S4, the etching depth is 1040 nm;
[0121] The length of the groove is the same as the length of the second light-absorbing layer;
[0122] The width W2 of the groove is 10 μm, and the width W2 of the groove is 10% of the width W1 of the second light-absorbing layer 5;
[0123] The depth of the groove is 40 nm, which is 20% of the thickness of the second light-absorbing layer 5.
[0124] In step S5,
[0125] The insulating layer 10 is made of SiO2 and has a thickness of 500 nm.
[0126] In step S6,
[0127] The p-type ohmic electrode 11 is made of Ni / Au and has a thickness of 20 nm.
[0128] The n-type ohmic electrode 12 is made of Ti / Al / Ti / Au material and has a thickness of 200 nm.
[0129] In step S7,
[0130] The material of mirror 13 is Al, and the thickness is 700 nm.
[0131] Example 2
[0132] A light-emitting diode, which differs from Embodiment 1 in that:
[0133] The width W2 of the groove is 15% of the width W1 of the second light-absorbing layer 5;
[0134] The rest is the same as in Example 1, and will not be repeated here.
[0135] Example 3
[0136] A light-emitting diode, which differs from Embodiment 1 in that:
[0137] The width W2 of the groove is 20% of the width W1 of the second light-absorbing layer 5;
[0138] The rest is the same as in Example 1, and will not be repeated here.
[0139] Example 4
[0140] A light-emitting diode, which differs from Embodiment 1 in that:
[0141] The thickness of the first light-absorbing layer 3 is 1 μm;
[0142] The thickness of the second light-absorbing layer 5 is 50 nm;
[0143] The width W2 of the groove is 5% of the width W1 of the second light-absorbing layer 5;
[0144] The depth H of the groove is 10% of the thickness of the second light-absorbing layer 5;
[0145] The thickness of the insertion layer 4 is 10 nm.
[0146] The rest is the same as in Example 1, and will not be repeated here.
[0147] Example 5
[0148] A light-emitting diode, which differs from Embodiment 1 in that:
[0149] The thickness of the first light-absorbing layer 3 is 3 μm;
[0150] The thickness of the second light-absorbing layer 5 is 400 nm;
[0151] The width W2 of the groove is 50% of the width W1 of the second light-absorbing layer 5;
[0152] The depth H of the groove is 50% of the thickness of the second light-absorbing layer 5;
[0153] The thickness of the insertion layer 4 is 100 nm.
[0154] The rest is the same as in Example 1, and will not be repeated here.
[0155] Example 6
[0156] A light-emitting diode, which differs from Embodiment 1 in that:
[0157] The multi-quantum well layer 7 completely covers the upper surface of the first electron injection layer 61.
[0158] The rest is the same as in Example 1.
[0159] The structural schematic diagram of the obtained light-emitting diode is as follows: Figure 11 As shown.
[0160] Result detection
[0161] Figure 8 This is a schematic diagram of the light-emitting area and the detection area of the diode obtained in Embodiment 1 of this utility model.
[0162] In practical applications, light-emitting diodes can be arranged in an array. Figure 9 This is a three-dimensional structural diagram of the array of light-emitting diode devices according to Embodiment 1 of this utility model.
[0163] The performance of the light-emitting diode in Embodiment 1 above was tested.
[0164] Within a voltage range of 0V to +6V, the light-emitting diode of Example 1 was tested to observe the change in optical power with voltage under conditions of ultraviolet light and without ultraviolet light irradiation.
[0165] The specific test results of Example 1 are shown in Table 1 below. Figure 10 As shown:
[0166] Table 1
[0167]
[0168] The results above show that in the absence of ultraviolet light, the optical power of the device is equivalent to 0, that is, the device does not emit light; in the presence of ultraviolet light, after the device reaches the turn-on voltage, the optical power gradually increases and the device emits light.
[0169] This invention describes a light-emitting diode (LED) with in-situ integrated state sensing capabilities. This LED possesses both detection and emission functions. In environments without ultraviolet (UV) light, the device does not emit light; upon detecting external UV light, it emits visible light. This allows for direct, real-time sensing and response to UV light conditions, providing a clear visual warning and minimizing the risk of UV harm to the human body, thus improving the safety of UV light use in daily life and production. It overcomes the shortcomings of existing UV detector-UV LED integrated devices, which rely on current indicators for their response to deep UV light, making the response less intuitive.
[0170] Any matters not covered in this utility model are common knowledge.
[0171] Obviously, the above embodiments of this utility model are merely examples for clearly illustrating this utility model, and are not intended to limit the implementation of this utility model. Those skilled in the art can make other variations or modifications based on the above description. It is neither necessary nor possible to exhaustively describe all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this utility model should be included within the protection scope of the claims of this utility model.
Claims
1. A light-emitting diode, characterized in that, The LED epitaxial structure includes a light-emitting diode epitaxial structure, a p-type ohmic electrode (11), and an n-type ohmic electrode (12). The LED epitaxial structure, from bottom to top, comprises: Substrate (1); Buffer layer (2); First light absorption layer (3); Insertion layer (4); The second light absorption layer (5) has a groove on its upper surface; The electron injection layer (6) includes a first electron injection layer (61) and a second electron injection layer (62); the first electron injection layer (61) and the second electron injection layer (62) are located on the left and right sides of the groove, respectively; and the first electron injection layer (61) and the second electron injection layer (62) are not connected to each other; And, from bottom to top, a multi-quantum well layer (7); an electron blocking layer (8); and a hole injection layer (9) are disposed on the upper surface of the first electron injection layer (61); The upper surface of the hole injection layer (9) is provided with a p-type ohmic electrode (11), and the upper surface of the second electron injection layer (62) is provided with an n-type ohmic electrode (12).
2. The light-emitting diode as described in claim 1, characterized in that, The first light-absorbing layer (3) and the second light-absorbing layer (5) are made of GaN.
3. The light-emitting diode as described in claim 2, characterized in that, The material of the insertion layer (4) is Al. 0.2 Ga 0.8 N.
4. The light-emitting diode as described in claim 1, characterized in that, The thickness of the first light-absorbing layer (3) is 1-3 μm.
5. The light-emitting diode as described in claim 1, characterized in that, The thickness of the second light-absorbing layer (5) is 50-400 nm.
6. The light-emitting diode as described in claim 1, characterized in that, The thickness of the insertion layer (4) is 1-100 nm.
7. The light-emitting diode as described in claim 1, characterized in that, The length of the groove is the same as the length of the second light-absorbing layer (5); the width W2 of the groove is 5% to 50% of the width W1 of the second light-absorbing layer (5).
8. The light-emitting diode as described in claim 1, characterized in that, The depth H of the groove is 10 to 50% of the thickness of the second light absorption layer (5).
9. The light-emitting diode as described in claim 1, characterized in that, The upper surface of the buffer layer (2) is partially exposed around the perimeter.
10. The light-emitting diode as claimed in claim 1, characterized in that, The light-emitting diodes are arranged in an array.