Miniature light emitting device

Abstract

The utility model relates to a micro light-emitting device comprising a light-emitting structure having at least one light-emitting area; the color filtering structure is located on the light-emitting side of the light-emitting structure and comprises an extinction layer and at least one color filtering unit, the extinction layer is provided with at least one light-transmitting area corresponding to the at least one light-emitting area, and light emitted by the light-emitting structure in each light-emitting area is emitted out through the corresponding light-transmitting area; each color filtering unit is arranged corresponding to one light-emitting area, at least part of the color filtering unit is filled in the light-transmitting area corresponding to the corresponding light-emitting area, and each color filtering unit is configured to transmit the light of the target color and reduce the light of the non-target color in the light emitted by the light-emitting structure in the corresponding light-emitting area; and the light condensing structure is located on the side, away from the light emitting structure, of the color filtering structure and is configured to converge light emitted from the light transmitting area, so that light crosstalk between pixels can be reduced, the color purity can be improved, and the display performance of a product can be improved.

Description

[Technical Field]

[0001] This application relates to the field of semiconductor light-emitting technology, specifically to a micro light-emitting device. [Background Technology]

[0002] For terminal electronic devices, especially head-mounted AR (Augmented Reality) / VR (Virtual Reality) near-eye display devices, clarity and color gamut are key display characteristics that affect consumers' visual experience. As the main display component of near-eye display devices, micro-display modules are an important research topic.

[0003] Currently, the mainstream technologies for micro-display modules include pixel-based light-emitting technologies represented by Micro LED (Micro Light Emitting Diode) and Micro OLED (Micro Organic Light Emitting Diode). Among them, Micro LED micro-display modules have extremely high research and application value due to their disruptive advantages such as high brightness, high resolution, low power consumption, long lifespan, and lightweight design.

[0004] However, in order to achieve high-definition and wide color gamut Micro LED full-color micro-display modules, appropriate module brightness, pixel density and color purity are required. But as pixel density continues to increase, the problems of light crosstalk between pixels and insufficient color purity have become key bottlenecks affecting high-resolution and wide color gamut display characteristics. [Utility Model Content]

[0005] This application provides a miniature light-emitting device to improve the problems of inter-pixel light crosstalk and insufficient color purity in Micro LED full-color micro-display modules.

[0006] To address the aforementioned problems, this application provides a micro light-emitting device comprising: a light-emitting structure having at least one light-emitting region; a color filtering structure located on the light-emitting side of the light-emitting structure, including an extinction layer and at least one color filtering unit, wherein the extinction layer has at least one light-transmitting region, the at least one light-transmitting region being respectively disposed corresponding to the at least one light-emitting region, and light emitted by the light-emitting structure in each light-emitting region being emitted through its corresponding light-transmitting region; each color filtering unit being disposed corresponding to one light-emitting region, and at least partially filling the light-transmitting region corresponding to its corresponding light-emitting region; and each color filtering unit being configured to: transmit light of the target color and reduce non-target color light in the light emitted by the light-emitting structure in its corresponding light-emitting region; and a focusing structure located on the side of the color filtering structure away from the light-emitting structure, including at least one focusing unit, the at least one focusing unit being respectively disposed corresponding to the at least one light-transmitting region, and each focusing unit being configured to converge the light emitted from its corresponding light-transmitting region.

[0007] The light-concentrating structure also includes a substrate, at least one light-concentrating unit is disposed on one side of the substrate, and the side of the light-concentrating structure with at least one light-concentrating unit is connected to the side of the color filter structure opposite to the light-emitting structure by a first adhesive layer.

[0008] The light-concentrating unit includes a light-concentrating surface, which is a curved surface that is concave towards the light-emitting structure, and the light-concentrating surface of the light-concentrating unit is configured to converge the light emitted from its corresponding light-transmitting area.

[0009] The micro light-emitting device also includes a second adhesive layer, which is located between the color filter structure and the light-emitting structure, and connects the color filter structure and the light-emitting structure together.

[0010] The light-concentrating structure further includes a planarization layer, at least one light-concentrating unit is disposed on one side of the planarization layer, a color filter structure is disposed on the side of the planarization layer opposite to the at least one light-concentrating unit, and the side of the color filter structure opposite to the planarization layer is connected to the light-emitting side of the light-emitting structure through a second adhesive layer.

[0011] The color filtering unit includes a color filtering layer, which is configured to transmit light of the target color and reflect or absorb light of non-target colors.

[0012] The color filtering unit includes a color conversion layer, which is configured to transmit light of the target color and convert light of non-target color into light of the target color.

[0013] The color filtering unit also includes a color filtering layer. In the color filtering unit, the color conversion layer and the color filtering layer are stacked sequentially in the direction away from the light-emitting structure. The color filtering layer of the color filtering unit is configured to transmit light of the target color and reflect or absorb light of non-target colors.

[0014] The system comprises multiple light-emitting regions, each with an initial color emitted by the light-emitting structure within it. It also comprises multiple color-filtering units, each including at least one first color-filtering unit and at least one second color-filtering unit. The color conversion layer of each first color-filtering unit is configured to transmit light of the first target color and convert the initial color light into light of the first target color, wherein the initial color is different from the first target color. Similarly, the color conversion layer of each second color-filtering unit is configured to transmit light of the second target color and convert the initial color light into light of the second target color, wherein the initial color is different from the second target color.

[0015] The light-emitting structure also includes a non-light-emitting area surrounding each light-emitting area, and includes a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a first electrode, and a second electrode. The light-emitting layer and the second semiconductor layer are located within the light-emitting area and are stacked sequentially on one side of the first semiconductor layer. The color filter structure is located on the side of the first semiconductor layer away from the light-emitting layer, and the light-concentrating structure is located on the side of the color filter structure away from the first semiconductor layer. The first electrode is located within the light-emitting area and is disposed on the side of the second semiconductor layer away from the light-emitting layer, and the second electrode is located within the non-light-emitting area and is disposed on the side of the first semiconductor layer away from the color filter structure.

[0016] The beneficial effects of this application are as follows: The micro light-emitting device provided by this application, by setting a color filter structure and a focusing structure on the light-emitting side of the light-emitting structure in the micro light-emitting device, wherein the light-emitting structure has at least one light-emitting area, the color filter structure is located on the light-emitting side of the light-emitting structure and includes an extinction layer and at least one color filter unit, the extinction layer has at least one light-transmitting area, the at least one light-transmitting area is respectively arranged corresponding to the at least one light-emitting area, and the light emitted by the light-emitting structure in each light-emitting area is emitted through its corresponding light-transmitting area, each color filter unit is arranged corresponding to one light-emitting area and at least partially fills the light-transmitting area corresponding to its corresponding light-emitting area, and each color filter unit is configured to transmit light of the target color and reduce light of non-target color in the light emitted by the light-emitting structure in its corresponding light-emitting area, the focusing structure is located on the side of the color filter structure away from the light-emitting structure and includes at least one focusing unit. Each focusing unit is respectively disposed corresponding to at least one light-transmitting area, and each focusing unit is configured to converge the light emitted from its corresponding light-transmitting area. This enables the micro LED chip as a light-emitting structure to be packaged together with the color filter structure and the focusing structure to form a micro light-emitting device. In the micro light-emitting device, the matting layer of the color filter structure can absorb the wide-viewing-angle light emitted by the light-emitting area of ​​the micro LED chip, the color filter unit of the color filter structure can selectively reduce the non-target color light in the light emitted by the light-emitting area of ​​the micro LED chip, and the focusing unit of the focusing structure can convert the light emitted from the light-transmitting area with a relatively large viewing angle into light with a relatively small viewing angle. Therefore, it can improve the optical crosstalk problem between pixels of the micro LED chip, improve the color purity of the light emitted by the micro LED chip, and improve the positive viewing angle brightness of the micro LED chip, which is beneficial to improving the display performance of the Micro LED micro-display module. [Attached Image Description]

[0017] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a cross-sectional structural schematic diagram of the micro light-emitting device provided in the embodiments of this application;

[0019] Figure 2 yes Figure 1 A top view of the structure of the intermediate matte layer, color filter unit, and light-gathering unit;

[0020] Figure 3 yes Figure 1 A top view of the intermediate matte layer;

[0021] Figure 4 yes Figure 1 A top view of the light-emitting structure;

[0022] Figure 5 This is another cross-sectional structural schematic diagram of the micro light-emitting device provided in the embodiments of this application;

[0023] Figure 6 This is another cross-sectional structural schematic diagram of the micro light-emitting device provided in the embodiments of this application;

[0024] Figure 7 This is another cross-sectional structural schematic diagram of the micro light-emitting device provided in the embodiments of this application.

Detailed Implementation Methods

[0025] The embodiments of this application will be further described in detail below with reference to the accompanying drawings and examples. It should be particularly noted that the following embodiments are only used to illustrate the embodiments of this application and do not limit the scope of the embodiments of this application. Similarly, the following embodiments are only some embodiments of the embodiments of this application, and not all embodiments. All other embodiments obtained by those skilled in the art without creative effort are within the protection scope of the embodiments of this application.

[0026] When describing the structure of a component, when referring to a layer or region as being "above" or "on top of" another layer or region, it can mean that it is directly above the other layer or region, or that it contains other layers or regions between itself and the other layer or region. Furthermore, if the component is flipped, the layer or region will be located "below" or "under" the other layer or region. Additionally, the features, structures, or characteristics described below can be combined in any suitable manner in one or more embodiments.

[0027] Furthermore, the directional terms mentioned in the embodiments of this application, such as [up], [down], [front], [back], [left], [right], [inner], [outer], [side], etc., are only for reference to the accompanying drawings. Therefore, the directional terms used are for illustrating and understanding the embodiments of this application, and not for limiting the embodiments of this application. In the various drawings, structurally similar units are represented by the same reference numerals. For clarity, the various parts in the drawings are not drawn to scale. In addition, some related parts may not be shown in the drawings.

[0028] The following detailed description is based on specific embodiments. It should be noted that the embodiments of this application can be presented in various forms, and some examples will be described below.

[0029] Please see Figures 1 to 4 , Figure 1 This is a cross-sectional structural diagram of the micro light-emitting device provided in the embodiments of this application. Figure 2 yes Figure 1 A top view of the structure of the intermediate matte layer, color filter unit, and light-gathering unit. Figure 3 yes Figure 1 A top view of the intermediate matte layer. Figure 4 yes Figure 1 A top-view schematic diagram of the light-emitting structure. (See diagram below.) Figures 1 to 4 As shown, the micro light-emitting device 10 includes a light-emitting structure 11, a color filter structure 12, and a light-concentrating structure 13. The color filter structure 12 is located on the light-emitting side of the light-emitting structure 11 and includes an matting layer 121 and at least one color filter unit 122. The light-concentrating structure 13 is located on the side of the color filter structure 111 facing away from the light-emitting structure 11. Specifically, the light-emitting structure 11 has at least one light-emitting region C1, and the matting layer 121 has at least one light-transmitting region 121A corresponding to each of the at least one light-emitting region C1. Light emitted by the light-emitting structure 11 in each light-emitting region C1 is emitted through its corresponding light-transmitting region 121A. Each color filter unit 122 is disposed corresponding to one light-emitting region C1 and is at least partially filled within the light-transmitting region 121A corresponding to its corresponding light-emitting region C1. Each color filter unit 122 is configured to transmit light of the target color and reduce non-target color light emitted by the light-emitting structure 11 in its corresponding light-emitting region C1. The light-concentrating structure 13 includes at least one light-concentrating unit 121, which is respectively disposed corresponding to the at least one light-transmitting region 121A, and each light-concentrating unit 131 is configured to converge the light emitted from its corresponding light-transmitting region 121A.

[0030] It is understood that in the aforementioned micro-light-emitting device 10, the light-emitting structure 11 within each light-emitting region C1 can correspond to a pixel, and this pixel can be a light-emitting diode, specifically a micro-LED (MicroLight Emitting Diode). Furthermore, for ease of understanding and explanation, the viewing angle of light can be defined as the acute angle between the light ray and the normal N1 of the micro-light-emitting device 10. The normal N1 of the micro-light-emitting device 10 is parallel to the thickness direction of the micro-light-emitting device 10 (i.e., the Z direction in the attached figure).

[0031] It should be noted that in this embodiment, by directly setting the color filter structure 12 and the focusing structure 13 on the light-emitting side of the light-emitting structure 11, the light-emitting structure 11, the color filter structure 12, and the focusing structure 13 are packaged together to form a micro light-emitting device 10. In the micro light-emitting device 10, the extinction layer 121 of the color filter structure 12 can absorb the wide-viewing-angle light L0 emitted by the light-emitting structure 11 in each light-emitting region C1. Each color filter unit 122 of the color filter structure 12 can reduce the non-target color light in the first light L1 emitted by the light-emitting structure 11 in its corresponding light-emitting region C1 and incident on the light-transmitting region 121A. Each focusing unit 131 of the focusing structure 13 can transform the second light L2 with a relatively large viewing angle emitted from its corresponding light-transmitting region 121A into a third light L3 with a relatively small viewing angle. Therefore, it can improve the optical crosstalk problem between pixels of the micro light-emitting diode chip, improve the color purity of the light emitted by the micro light-emitting diode chip, and improve the positive viewing angle brightness of the micro light-emitting diode chip, thereby facilitating the realization of Micro The high resolution and wide color gamut of LED micro-display modules enable them to better meet the requirements for high-definition and wide color gamut display image quality.

[0032] In this embodiment, as Figure 1 As shown, in the above-mentioned micro light-emitting device 10, the number of light-transmitting regions 121A can be equal to the number of light-emitting regions C1, and the light-transmitting regions 121A and the light-emitting regions C1 can correspond one-to-one. Specifically, the light-transmitting region 121A can be located directly above its corresponding light-emitting region C1, and the orthogonal projection of the light-transmitting region 121A on the light-emitting structure 11 can completely cover its corresponding light-emitting region C1. The orthogonal projection area of ​​the light-transmitting region 121A on the light-emitting structure 11 can be larger than the area of ​​its corresponding light-emitting region C1.

[0033] Specifically, such as Figure 1 and Figure 3 As shown, the aforementioned matting layer 121 may also have a light-blocking region 121B disposed around each light-transmitting region 121A. Furthermore, as... Figure 1 As shown, during the use of the micro light-emitting device 10, the first light ray L1 emitted by the light-emitting structure 11 in each light-emitting region C1 that is incident on the corresponding light-transmitting region 121A will be emitted from the corresponding light-transmitting region 121A. The wide-viewing-angle light ray L0 emitted by the light-emitting structure 11 in each light-emitting region C1 that is incident on the light-blocking region 121B will be absorbed by the light-blocking region 121B. Thus, when the micro light-emitting device 10 is applied to the display field, the optical crosstalk phenomenon between pixels can be significantly reduced, thereby improving the display effect of the corresponding product (e.g., display terminal device).

[0034] It should be noted that this embodiment does not limit the specific structure and material of the matting layer 121. The first light L1 emitted by the light-emitting structure 11 in the at least one light-emitting region C1 can be emitted from the at least one light-transmitting region 121A respectively, and the wide-viewing-angle light L0 emitted by the light-emitting structure 11 in the at least one light-emitting region C1 can be absorbed by the light-blocking region 121B.

[0035] In some embodiments, such as Figure 1 and Figure 3 As shown, each light-transmitting region 121A may have an opening 1211 on the side of the matting layer 121 facing away from the light-emitting structure 11. Each color filter unit 122 may be disposed within the opening 1211 of the light-transmitting region 121A corresponding to its corresponding light-emitting region C1, and may at least partially fill the opening 1211 of the light-transmitting region 121A corresponding to its corresponding light-emitting region C1. Thus, since the formation of the opening 1211 can precisely correspond to the light-emitting region C1, precise alignment between the color filter unit 122 and the light-emitting region C1 can be achieved.

[0036] Specifically, such as Figure 1 As shown, for each color filter unit 122, the color filter unit 122 can completely cover the bottom wall surface 1211B of the opening 1211 of the light-transmitting area 121A corresponding to its corresponding light-emitting area C1, so that the light emitted by the light-emitting structure 11 in its corresponding light-emitting area C1 that is incident on the bottom wall surface 1211B of the opening 1211 can be emitted through the color filter unit 122. This allows the color filter unit 122 to reduce as much as possible the non-target color light in the first light L1 emitted by the light-emitting structure 11 in its corresponding light-emitting area C1 that is incident on the light-transmitting area 121A, so as to more effectively improve the color purity of the light emitted by the light-emitting structure 11 in its corresponding light-emitting area C1.

[0037] Furthermore, in specific implementations, in the surface of the color filter structure 12 facing away from the light-emitting structure 11, the height of the color filter unit 122 can be equal to or lower than the height of the matting layer 121. In some examples, such as Figure 1 As shown, in the surface of the color filter structure 12 facing away from the light-emitting structure 11, the height of the color filter unit 122 can be equal to the height of the matting layer 121. Specifically, as shown... Figure 1 As shown, the surface of the color filter structure 12 facing away from the light-emitting structure 11 can be a flat surface.

[0038] Specifically, such as Figure 1 and Figure 3As shown, the opening 1211 of each light-transmitting region 121A can penetrate the light-absorbing layer 121, and the orthographic projection of the bottom wall surface 1211B of the opening 1211 of each light-transmitting region 121A onto the light-emitting structure 11 can completely cover its corresponding light-emitting region C1, so that the first light L1 emitted by the light-emitting structure 11 in the light-emitting region C1 can be emitted from the light-transmitting region 121A as much as possible, thereby improving the light extraction efficiency of the micro light-emitting device 10.

[0039] Furthermore, in specific implementation, such as Figure 1 and Figure 3 As shown, the matting layer 121 may have at least one opening 1211 on the side away from the light-emitting structure 11. The at least one opening 1211 is respectively provided in correspondence with the at least one light-emitting area C1. The area where each opening 1211 of the matting layer 121 is located is a light-transmitting area 121A. The remaining area of ​​the matting layer 121 other than the area where the at least one opening 1211 is located is the light-blocking area 121B.

[0040] In some examples, the material of the matte layer 121 can be a high-matte material such as black glue.

[0041] In some specific embodiments, such as Figure 1 As shown, the included angle between the side wall surface 1211A and the bottom wall surface 1211B of the opening 1211 can be greater than or equal to 90 degrees. The side wall surface 1211A of the opening 1211 can be a plane (e.g., ...). Figure 1 As shown), it can be concave or convex. Furthermore, it should be noted that in the above-mentioned micro light-emitting device 10, the specific shape of the sidewall surface 1211A of each opening 1211 included in the matting layer 121 can be set according to actual needs, and this case does not limit it.

[0042] In this embodiment, as Figure 4 As shown, the light-emitting structure 11 described above can have multiple light-emitting regions C1, which are spaced apart. Specifically, the multiple light-emitting regions C1 can be arranged in an array to form a light-emitting region array. Furthermore, the light-emitting structure 11 may also have a non-light-emitting region C2, which may include a spacing region C21 and a peripheral region C22. The spacing region C21 is the area separating each light-emitting region C1 from other light-emitting regions C1 located around it. The peripheral region C22 is the area surrounding the multiple light-emitting regions C1, used to set the common electrode of the pixel.

[0043] In some embodiments, such as Figure 1As shown, the light-emitting structure 11 has a plurality of light-emitting regions C1, and the plurality of light-emitting regions C1 may include at least one first light-emitting region CR, at least one second light-emitting region CG and at least one third light-emitting region CB.

[0044] Accordingly, such as Figure 1 As shown, in the above-mentioned micro light-emitting device 10, the number of color filtering units 122 can also be multiple, and the multiple color filtering units 122 can include at least one first color filtering unit 122A and at least one second color filtering unit 122B, wherein the at least one first color filtering unit 122A corresponds one-to-one with the at least one first light-emitting region CR, and the at least one second color filtering unit 122B corresponds one-to-one with the at least one second light-emitting region CG.

[0045] In this embodiment, as Figure 1 As shown, in the aforementioned micro-light-emitting device 10, each color filter unit 122 can be located directly above its corresponding light-emitting area C1. The orthographic projection of each color filter unit 122 onto the light-emitting structure 11 can completely cover its corresponding light-emitting area C1. Each color filter unit 122 can reduce the non-target color light in the first light L1 emitted by the light-emitting structure 11 within its corresponding light-emitting area C1. The non-target color light can refer to light that is not desired to be emitted from the light-transmitting area 121A, such as red light, green light, blue light, or ultraviolet light. Thus, when the aforementioned micro-light-emitting device 10 is applied to the field of full-color display, the selective transmission and / or spectral narrowing function of the color filter unit 122 for the emitted light of different color pixels can improve the blue light leakage problem and the problem of insufficient spectral color purity in the color conversion process of the full-color display module.

[0046] In some embodiments, such as Figure 1 As shown, each color filtering unit 122 may include a color filtering layer 1221, and the color filtering layer 1221 of each color filtering unit 122 may be configured to transmit light of the target color and reflect or absorb light of non-target colors.

[0047] Specifically, for each color filter unit 122, the light emitted by the light-emitting structure 11 in the light-emitting area C1 corresponding to the color filter unit 122 can be the target color (e.g., red, green, or blue). Other light rays (i.e., non-target color light rays) that may exist in the light emitted by the light-emitting structure 11 in the light-emitting area C1 corresponding to the color filter unit 122 will be reflected or absorbed by the color filtering layer 1221 of the color filter unit 122 during the process of passing through the color filtering layer 1221 of the color filter unit 122, and will not be able to pass through the color filtering layer 1221 of the color filter unit 122. Thus, the color filtering layer 1221 of the color filter unit 122 plays the role of filtering the target color light emitted by the light-emitting structure 11 in its corresponding light-emitting area C1, thereby improving the color purity of the light emitted by the light-emitting structure 11 in its corresponding light-emitting area C1.

[0048] In some specific embodiments, the aforementioned color filtering layer 1221 can be specifically a transmissive-reflective layer, which can transmit light of the target color and reflect light of non-target colors. Specifically, the transmissive-reflective layer may include multiple layers of refractive material stacked sequentially in the direction away from the light-emitting structure 11, and adjacent refractive material layers may have different refractive indices. Furthermore, in specific implementations, the aforementioned transmissive-reflective layer can be obtained by forming a stacked structure using organic or inorganic materials with different refractive indices. In addition, by designing the number and thickness of the stacked layers and the refractive index of each layer, the center wavelength and bandwidth of the transmittance spectrum of the stacked structure can be adjusted. For example, the aforementioned transmissive-reflective layer can be specifically a stacked structure composed of multiple first refractive material layers and multiple second refractive material layers alternately stacked in the direction away from the light-emitting structure 11, wherein the first and second refractive material layers have different refractive indices, and by designing the thickness and number of the first and second refractive material layers in the stacked structure, the center wavelength and bandwidth of the transmittance spectrum of the stacked structure can be adjusted.

[0049] In other specific embodiments, the color filtering layer 1221 described above may be a color absorption layer that allows light of the target color to pass through while absorbing light of non-target colors. For example, the material of the color absorption layer 133 may be a color filtering material such as colored ink.

[0050] Furthermore, in the above-described embodiment where the plurality of light-emitting regions C1 include at least one first light-emitting region CR, at least one second light-emitting region CG, and at least one third light-emitting region CB, and the plurality of color filtering units 122 may include at least one first color filtering unit 122A and at least one second color filtering unit 122B, as shown... Figure 1As shown, the emission color of the emission structure 11 in the first emission region CR can be a first target color, the emission color of the emission structure 11 in the second emission region CG can be a second target color, and the emission color of the emission structure 11 in the third emission region CB can be a third target color. The light of the first target color, the light of the second target color, and the light of the third target color are used to synthesize white light. For example, the first target color can be red, the second target color can be green, and the third target color can be blue. Specifically, as... Figure 1 As shown, the plurality of color filtering units 122 may further include at least one third color filtering unit 122C, which corresponds one-to-one with the at least one third light-emitting region CB. Furthermore, the color filtering layer 1221 included in each first color filtering unit 122A may be specifically configured to: transmit light of the first target color and reflect or absorb light of a color other than the first target color (e.g., the second target color and the third target color). The color filtering layer 1221 included in each second color filtering unit 122B may be specifically configured to: transmit light of the second target color and reflect or absorb light of a color other than the second target color (e.g., the first target color and the third target color). The color filtering layer 1221 included in each first color filtering unit 122C may be specifically configured to: transmit light of the third target color and reflect or absorb light of a color other than the first target color (e.g., the first target color and the third target color).

[0051] Thus, by using the color filtering layers 1221 of different color filtering units 122A / 13B / 13C to selectively transmit light emitted from different color pixels, the blue light leakage problem and insufficient spectral color purity problem in the color conversion process of the full-color display module can be improved.

[0052] In some embodiments, such as Figure 1 As shown, each color filtering unit 122 may include a color conversion layer 1222, and the color conversion layer 1222 of each color filtering unit 122 may be configured to: transmit light of the target color and convert light of non-target color into light of the target color.

[0053] Specifically, for each color filter unit 122, the light emitted by the light-emitting structure 11 in the light-emitting area C1 corresponding to the color filter unit 122 can be a non-target color (i.e., a color different from the target color). The non-target color light emitted by the light-emitting structure 11 in the light-emitting area C1 corresponding to the color filter unit 122 will be converted into target color light (e.g., red, green, or blue light) by the color conversion layer 1222 of the color filter unit 122 during the process of passing through the color conversion layer 1222 of the color filter unit 122. This effectively improves the blue light leakage problem in the color conversion process of the full-color display module while realizing the full-color display of the micro light-emitting device 10.

[0054] For example, the material of the color conversion layer 1222 may include color conversion materials such as quantum dots and / or phosphors.

[0055] Furthermore, in the above-described embodiment where the plurality of light-emitting regions C1 include at least one first light-emitting region CR, at least one second light-emitting region CG, and at least one third light-emitting region CB, and the plurality of color filtering units 122 may include at least one first color filtering unit 122A and at least one second color filtering unit 122B, as shown... Figure 1 As shown, the light emitted by the light-emitting structures 11 within the plurality of light-emitting regions C1 can be the same color, and can all be the initial color. For example, the light emitted by the light-emitting structures 11 within the plurality of light-emitting regions C1 can all be blue light or ultraviolet light, that is, the initial color can be blue or colorless. Specifically, the color conversion layer 1222 included in each first color filtering unit 122A can be specifically configured to: transmit light of the first target color and convert the light of the initial color into light of the first target color, and the initial color is different from the first target color. The color conversion layer 1222 included in each second color filtering unit 122B can be specifically configured to: transmit light of the second target color and convert the light of the initial color into light of the fifth target color, and the initial color is different from the second target color.

[0056] In some examples, the light of the initial color, the light of the first target color, and the light of the second target color can be combined to form white light. For example, the initial color can be blue, the first target color can be red, and the second target color can be green.

[0057] In other examples, such as Figure 1As shown, the plurality of color filtering units 122 may further include at least one third color filtering unit 122C, which corresponds one-to-one with the at least one third light-emitting region CB. Furthermore, the color conversion layer 1222 included in each third color filtering unit 122B may be specifically configured to: transmit light of the third target color and convert light of the initial color into light of the third target color, wherein the initial color is different from the third target color, and the light of the third target color, the light of the first target color, and the light of the second target color can be combined to form white light. For example, the light of the initial color may be ultraviolet light, the light of the first target color may be red light, the light of the second target color may be green light, and the light of the third target color may be blue light.

[0058] Thus, by using the color conversion layer 1222 of different color filter units 122A / 13B / 13C to convert the emitted light of the same color pixel into emitted light of multiple different colors, not only can the full-color display of the micro light-emitting device 10 mentioned above be realized, but also the problems of blue light leakage and insufficient spectral color purity in the color conversion process of the full-color display module can be effectively improved.

[0059] In some specific embodiments, such as Figure 5 As shown, each color filtering unit 122 (e.g., the first color filtering unit 122A, the second color filtering unit 122B, and the third color filtering unit 122C) may include both the color conversion layer 1222 and the color filtering layer 1221. In each color filtering unit 122, the color conversion layer 1222 and the color filtering layer 1221 may be stacked sequentially in the direction away from the light-emitting structure 11.

[0060] Specifically, the light emitted by the light-emitting structures 11 within the multiple light-emitting regions C1 can be the same color, and all can be the initial color. Furthermore, for each color filtering unit 122, the light emitted by the light-emitting structures 11 within the corresponding light-emitting region C1 is at least partially converted to the target color by the color conversion layer 1222 included in the color filtering unit 122 during its passage through the unit. The remaining portion, after passing through the color conversion layer 1222, can be reflected or absorbed by the color filtering layer 1221 included in the unit. The reflected light, after incident on the color conversion layer 1222, can be further converted to the target color by the color conversion layer 1222, thereby not only further improving the color purity of the light emitted by the micro-light-emitting device 10, but also improving its light emission efficiency.

[0061] In the above embodiments, such as Figure 1 , Figure 2 and Figure 5 In the aforementioned micro-light-emitting device 10, the number of focusing units 131 can be equal to the number of light-transmitting regions 121A, and the focusing units 131 and light-transmitting regions 121A can correspond one-to-one. Furthermore, during the use of the micro-light-emitting device 10, each focusing unit 131 can deflect at least a portion of the second light ray L2 emitted from its corresponding light-transmitting region 121A towards the normal N1 of the micro-light-emitting device 10, thereby reducing the light emission angle of the micro-light-emitting device 10 and increasing the brightness of the micro-light-emitting device 10 at its positive viewing angle. This helps to reduce crosstalk between pixels and improves the display performance of the Micro LED micro-display module.

[0062] Specifically, the orthographic projection of each light-concentrating unit 131 onto the color filter structure 12 can completely cover its corresponding light-transmitting area 121A, so that all light passing through its corresponding light-transmitting area 121A can be incident on the corresponding light-concentrating unit 131, thereby improving the light output efficiency of the micro light-emitting device 10.

[0063] It should be noted that this embodiment does not limit the specific structure of the focusing unit 131. The focusing unit 131 only needs to be able to convert light rays with a relatively large viewing angle emitted from its corresponding light-transmitting area 121A into light rays with a relatively small viewing angle. In some examples, such as... Figure 1 and Figure 5 As shown, the light-concentrating unit 131 can be an optical lens, for example, it can be a convex lens.

[0064] It should be noted that this embodiment does not limit the specific material of the focusing unit 131; the material used to prepare the focusing unit 131 only needs to have a low extinction coefficient and a high refractive index. In some examples, the material of the focusing unit 131 may include at least one of the following: silicon nitride, titanium oxide, zirconium oxide, high refractive index adhesive, etc.

[0065] In some specific embodiments, such as Figure 1 and Figure 5As shown, the focusing unit 131 may include a focusing surface F1, and the focusing surface F1 of the focusing unit 131 is configured to converge the light emitted from its corresponding light-transmitting region 121A. Specifically, the orthogonal projection of the focusing surface F1 of the focusing unit 131 onto the color filter structure 12 can completely cover its corresponding light-transmitting region 121A, so that all light passing through its corresponding light-transmitting region 121A can be incident on the focusing surface F1 of the corresponding focusing unit 131. Furthermore, after the first light ray L1 emitted by the light-emitting structure 11 in the light-emitting region C1 is incident on the focusing surface F1 of the focusing unit 131 via the light-transmitting region 12A, it can be refracted at the focusing surface F1 of the focusing unit 131 in a direction close to the normal N1 of the micro light-emitting device 10, thereby achieving the effect of narrowing the light emission viewing angle range.

[0066] It should be noted that this embodiment does not limit the specific shape of the focusing surface F1 of the focusing unit 131. The focusing surface F1 can refract light rays with a relatively large viewing angle emitted from the light-transmitting region 12A into light rays with a relatively small viewing angle. In some examples, the focusing surface F1 of the focusing unit 131 may include at least one curved surface and / or at least one inclined plane, for example, such as... Figure 1 and Figure 5 As shown, the focusing surface F1 of the focusing unit 131 can be specifically a curved surface that is concave towards the light-emitting structure 11.

[0067] In some embodiments, such as Figure 1 and Figure 5 As shown, the aforementioned micro-light-emitting device 10 may further include a first adhesive layer 15, which is located between the light-concentrating structure 13 and the color-filtering structure 12, and connects the light-concentrating structure 13 and the color-filtering structure 12 together. In this way, the light-concentrating structure 13 and the color-filtering structure 12 can be fabricated separately, and the fabricated light-concentrating structure 13 can be fixed to the side of the color-filtering structure 12 opposite to the light-emitting structure 11 using an inverted bonding process, thereby reducing the complexity of the manufacturing process.

[0068] The first adhesive layer 15 serves both to bond and transmit light. In some examples, the first adhesive layer 15 can be made of a low-gloss material, such as optical adhesive or a mixture thereof.

[0069] In some embodiments, such as Figure 6As shown, the aforementioned micro-light-emitting device 10 may further include a second adhesive layer 16, which is located between the color filter structure 12 and the light-emitting structure 11, and connects the color filter structure 12 and the light-emitting structure 11 together. In this way, the color filter structure 12 and the light-emitting structure 11 can be fabricated separately, and the fabricated color filter structure 12 can be fixed to the light-emitting side of the light-emitting structure 11 using an inverted bonding process, thereby reducing the complexity of the manufacturing process.

[0070] The second adhesive layer 16 serves both to bond and transmit light. In some examples, the second adhesive layer 16 can be made of a low-gloss material, such as optical adhesive or a mixture thereof.

[0071] In some embodiments, such as Figure 1 and Figure 5 As shown, the light-concentrating structure 13 may further include a substrate 132, and the at least one light-concentrating unit 131 may be disposed on one side of the substrate 132. The substrate 132 may be a flexible or rigid substrate for fabricating the at least one light-concentrating unit 131, and its material may be a low-extinction material, such as glass, polyimide, or other organic or inorganic materials.

[0072] Furthermore, in specific implementation, the substrate 132 and the at least one light-concentrating unit 131 can be integrally formed. Specifically, the at least one light-concentrating unit 131 can be formed by the surface of the substrate 132 facing the color filter structure 12 protruding towards the color filter structure 12 at the position corresponding to the at least one light-transmitting area 121A.

[0073] In some embodiments, such as Figure 1 and Figure 5 As shown, the light-concentrating structure 13 may further include a planarization layer 133, at least one light-concentrating unit 131 is disposed on one side of the planarization layer 133, and the color filter structure 12 is disposed on the side of the planarization layer 133 away from the at least one light-concentrating unit 131. The surface of the planarization layer 133 facing the color filter structure 12 can be a flat surface, so that the planarization layer 133 can achieve the effects of planarization and guiding light emission.

[0074] Furthermore, in the above-described embodiment where the light-concentrating structure 13 also includes a substrate 132, such as... Figure 1 and Figure 5 As shown, the planarization layer 133 and the at least one light-concentrating unit 131 can be disposed on the same side of the substrate 132. The planarization layer 133 covers the at least one light-concentrating unit 131, and the surface of the planarization layer 133 facing away from the substrate 132 is a flat surface, so that the planarization layer 133 can achieve the effects of planarization and guiding light emission.

[0075] Specifically, the refractive index of the planarization layer 133 can be less than that of the light-concentrating unit 131, so that the planarization layer 133 and the light-concentrating unit 131 form a refractive index difference, thereby enabling the planarization layer 133 to guide light through the light-concentrating unit 131 and emit light, which is beneficial to improving the light emission efficiency.

[0076] It should be noted that this embodiment does not limit the specific material of the planarization layer 133. The material used to prepare the planarization layer 133 only needs to satisfy the requirements of a low extinction coefficient and a refractive index lower than that of the light-concentrating unit 131. In some examples, the material of the planarization layer 133 may include at least one of the following: silicon dioxide, PMMA (polymethyl methacrylate), and PI (polyimide).

[0077] It is understood that in the above-mentioned micro light-emitting device 10, the light-concentrating structure 13 may include the above-mentioned planarization layer 133, or may not include the above-mentioned planarization layer 133.

[0078] Specifically, in embodiments where the light-concentrating structure 13 does not include the planarization layer 133, the side of the light-concentrating structure 13 with at least one light-concentrating unit 131 and the side of the color filter structure 12 facing away from the light-emitting structure 11 can be connected together through the first adhesive layer 15. This allows the color filter structure 12 to be directly integrated on the light-emitting side of the light-emitting structure 11 without the need for the second adhesive layer 16 between the light-emitting structure 11 and the color filter structure 12. Furthermore, the light-concentrating structure 13 can be inverted and attached to the side of the color filter structure 12 facing away from the light-emitting structure 11 through the first adhesive layer 15. The first adhesive layer 15 simultaneously serves to bond, planarize, and guide light emission, and the material used to prepare the first adhesive layer 15 needs to have low extinction properties and a low refractive index.

[0079] Specifically, in the embodiment where the light-concentrating structure 13 includes the aforementioned planarization layer 133, the aforementioned color filter structure 12 can be disposed on the side of the planarization layer 133 away from the at least one light-concentrating unit 131, and the side of the color filter structure 12 away from the planarization layer 133 and the light-emitting side of the light-emitting structure 11 can be connected together through the aforementioned second adhesive layer 16, thereby enabling the color filter structure 12 and the light-concentrating structure 13 to be manufactured as a whole without the need to provide the aforementioned first adhesive layer 15 between the color filter structure 12 and the light-concentrating structure 13, and the manufactured whole including the color filter structure 12 and the light-concentrating structure 13 can be inverted and attached to the light-emitting side of the light-emitting structure 11 through the second adhesive layer 16.

[0080] In the above embodiments, such as Figure 7As shown, the light-emitting structure 11 may include a first semiconductor layer 111, a light-emitting layer 112, and a second semiconductor layer 113. The light-emitting layer 112 and the second semiconductor layer 113 are located within the light-emitting region C1 and are stacked sequentially on one side of the first semiconductor layer 111. The color filter structure 12 is located on the side of the first semiconductor layer 111 away from the light-emitting layer 112, and the light-concentrating structure 13 is located on the side of the color filter structure 12 away from the first semiconductor layer 111.

[0081] Specifically, the light-emitting layer 112 can be a quantum well layer, for example, an indium gallium nitride (IGaN) quantum well layer, or an IGaN / GaN multi-quantum well layer. The first semiconductor layer 111 and the second semiconductor layer 113 have different polarities. Specifically, the first semiconductor layer 111 can be one of an N-type semiconductor layer and a P-type semiconductor layer, and the second semiconductor layer 113 can be the other of an N-type semiconductor layer and a P-type semiconductor layer. The N-type semiconductor layer can specifically be an N-type gallium nitride layer or an N-type gallium arsenide layer, and the P-type semiconductor layer can specifically be a P-type gallium nitride layer or a P-type aluminum gallium nitride layer.

[0082] In some specific embodiments, the light-emitting structure 11 may further include a buffer layer (not shown in the figure), the buffer layer is located on the side of the first semiconductor layer 111 away from the light-emitting layer 112, and the color filter structure 12 may be specifically located on the side of the buffer layer away from the first semiconductor layer 111, and the light-concentrating structure 13 may be specifically located on the side of the color filter structure 12 away from the buffer layer.

[0083] Specifically, the light-emitting structure 11 may further include a first substrate (not shown in the figure), the first substrate is located on the side of the buffer layer away from the first semiconductor layer 111, and the color filter structure 12 may be specifically located on the side of the first substrate away from the buffer layer, and the light-concentrating structure 13 may be specifically located on the side of the color filter structure 12 away from the first substrate.

[0084] The first substrate serves to support the film structure located thereon. The buffer layer can alleviate the stress between the first semiconductor layer 111 and the first substrate caused by lattice mismatch and thermal expansion coefficient mismatch.

[0085] In some examples, the first substrate can be a sapphire substrate, a silicon substrate, or a silicon carbide substrate, etc. The material of the buffer layer can include buffer materials such as silicon nitride, silicon oxide, gallium nitride, or aluminum nitride. For example, the buffer layer can specifically be an unintentionally doped gallium nitride (U-GaN) layer.

[0086] It should be noted that, compared to the above-mentioned schemes where the color filter structure 12 and the light-concentrating structure 13 are specifically located on the side of the first substrate away from the buffer layer, and the above-mentioned schemes where the color filter structure 12 and the light-concentrating structure 13 are specifically located on the side of the buffer layer away from the first semiconductor layer 111, the above-mentioned scheme where the color filter structure 12 and the light-concentrating structure 13 are specifically located on the side of the first semiconductor layer 111 away from the light-emitting layer 112 makes the color filter structure 12 and the light-concentrating structure 13 closer to the light-emitting layer 112 in the light-emitting structure 11. This can improve the absorption energy of the extinction layer 121 included in the color filter structure 12 for the wide-view light emitted by the light-emitting layer 112, and can improve the light-concentrating effect of the light-concentrating unit 131 included in the light-concentrating structure 13 for the light emitted by the light-emitting layer 112. It can also more effectively improve the color purity of the light emitted by the above-mentioned micro light-emitting device 10.

[0087] In some specific embodiments, such as Figure 7 As shown, the light-emitting structure 11 may further include a first electrode 115 and a second electrode 116. The first electrode 115 is located in the light-emitting region C1 and is disposed on the side of the second semiconductor layer 113 away from the light-emitting layer 112. The second electrode 116 is located in the non-light-emitting region C2 and is disposed on the side of the first semiconductor layer 111 away from the color filter structure 12.

[0088] Specifically, in the above embodiment where the non-light-emitting region C2 includes the spacer region C21 and the peripheral region C22, as shown... Figure 7 As shown, the second electrode 116 can be specifically located within the peripheral region C22 of the non-light-emitting region C2.

[0089] In some embodiments, such as Figure 7 As shown, the light-emitting structure 11 may further include a current diffusion layer 114, which is located in the light-emitting region C1 and disposed between the first electrode 115 and the second semiconductor layer 113. The current diffusion layer 114 can extend and distribute the current to the second semiconductor layer 113 (e.g., a P-type gallium nitride layer), thereby improving the light-emitting efficiency of the light-emitting layer 112.

[0090] Furthermore, in a specific implementation, the current diffusion layer 114 can be fabricated by depositing multiple layers of metal (e.g., titanium Ti, aluminum Al, gold Au, platinum Pt or nickel Ni) or semiconductor oxide (e.g., indium tin oxide ITO or zinc oxide ZnO) on the surface of the second semiconductor layer 113 away from the light-emitting layer 112 to form a current conduction.

[0091] In some embodiments, such as Figure 7As shown, the light-emitting structure 11 may also include a passivation layer 117, which covers the light-emitting structure 11 to effectively block external water and oxygen from corroding the light-emitting structure 11, thereby improving product reliability.

[0092] Furthermore, in the above-described embodiment where the light-emitting structure 11 further includes a current diffusion layer 114, such as... Figure 7 As shown, the passivation layer 117 can also cover the current diffusion layer 114 to effectively block external water and oxygen from corroding the current diffusion layer 114, thereby improving product reliability.

[0093] Specifically, such as Figure 7 As shown, the first electrode 115 may include a first electrode layer 1151, a first conductive structure 1152, and a first bonding electrode 1153 sequentially stacked in a direction away from the second semiconductor layer 113. The second electrode 116 may include a second electrode layer 1161, a second conductive structure 1162, and a second bonding electrode 1163 sequentially stacked in a direction away from the first semiconductor layer 111. Furthermore, the passivation layer 117 may cover the first electrode layer 1151 and the second electrode layer 1161 to effectively prevent external water and oxygen from eroding the first electrode layer 1151 and the second electrode layer 1161, thereby improving product reliability.

[0094] Specifically, the first bonding electrode 1153 can be disposed on the side of the passivation layer 117 opposite to the light-emitting structure 11, the first electrode layer 1151, and the second electrode layer 1161, corresponding to the region of the first electrode layer 1151. The first conductive structure 1152 can be located between the first bonding electrode 1153 and the first electrode layer 1151, and penetrate through the film structure (e.g., the passivation layer 117) located between the first bonding electrode 1153 and the first electrode layer 1151. Furthermore, the two opposite ends of the first conductive structure 1152 in the longitudinal Z direction can be electrically connected to the first bonding electrode 1153 and the first electrode layer 1151, respectively, thereby realizing the electrical connection between the first bonding electrode 1153 and the first electrode layer 1151.

[0095] Specifically, the second bonding electrode 1163 can be disposed on the side of the passivation layer 117 opposite to the light-emitting structure 11, the first electrode layer 1151, and the second electrode layer 1161, corresponding to the region of the second electrode layer 1161. The second conductive structure 1162 can be located between the second bonding electrode 1163 and the second electrode layer 1161, and penetrate through the film structure (e.g., the passivation layer 117) located between the second bonding electrode 1163 and the second electrode layer 1161. Furthermore, the two opposite ends of the second conductive structure 1162 in the longitudinal Z direction can be electrically connected to the second bonding electrode 1163 and the second electrode layer 1161, respectively, thereby realizing the electrical connection between the second bonding electrode 1163 and the second electrode layer 1161.

[0096] In some specific embodiments, in the light-emitting structure 11 described above, the first semiconductor layer 111 can be an N-type semiconductor layer, and the second semiconductor layer 113 can be a P-type semiconductor layer. Correspondingly, the first electrode 115 can be a P-type electrode electrically connected to the P-type semiconductor layer, and the second electrode 116 can be an N-type electrode electrically connected to the N-type semiconductor layer, thereby enabling all pixels in the micro light-emitting device 10 to share the same N-type electrode and each have an independent P-type electrode.

[0097] In other specific embodiments, in the light-emitting structure 11 described above, the first semiconductor layer 111 can be a P-type semiconductor layer, and the second semiconductor layer 113 can be an N-type semiconductor layer. Correspondingly, the first electrode 115 can be an N-type electrode electrically connected to the N-type semiconductor layer, and the second electrode 116 can be a P-type electrode electrically connected to the P-type semiconductor layer, thereby enabling all pixels in the micro light-emitting device 10 to share the same P-type electrode and each have an independent N-type electrode.

[0098] In some examples, the second electrode 116 may be annular, and its orthogonal projection on the first semiconductor layer 111 may surround the orthogonal projections of all the first electrodes 115 on the first semiconductor layer 111 to reduce the contact resistance of the second electrode 116.

[0099] In some examples, the material of the first electrode layer 1151 may include at least one of the following metals: titanium (Ti), gold (Au), platinum (Pt), nickel (Ni), and aluminum (Al). The material of the second electrode layer 1161 may also include at least one of the following metals: titanium (Ti), gold (Au), platinum (Pt), nickel (Ni), and aluminum (Al). Furthermore, in specific implementations, the first electrode layer 1151 and the second electrode layer 1161 may be made of the same material and may be formed simultaneously.

[0100] In some examples, the material of the first conductive structure 1152 may include at least one of the following metals: titanium (Ti), gold (Au), platinum (Pt), nickel (Ni), and aluminum (Al). Similarly, the material of the second conductive structure 1162 may include at least one of the following metals: titanium (Ti), gold (Au), platinum (Pt), nickel (Ni), and aluminum (Al). Furthermore, in specific implementations, the first conductive structure 1152 and the second conductive structure 1162 may be made of the same material and may be formed simultaneously.

[0101] In some examples, the material of the first bonding electrode 1153 may include at least one of the following metals: gold (Au), indium (In), tin (Sn), and copper (Cu); and the material of the second bonding electrode 1163 may include at least one of the following metals: gold (Au), indium (In), tin (Sn), and copper (Cu). Furthermore, in specific implementations, the first bonding electrode 1153 and the second bonding electrode 1163 may be made of the same material and may be formed simultaneously.

[0102] In some examples, the material of the passivation layer 117 may include at least one of insulating materials such as silicon oxide, silicon nitride, and aluminum oxide.

[0103] In the above embodiments, such as Figure 7 As shown, the micro light-emitting device 10 may further include a driving substrate 17, and in the micro light-emitting device 10, the light-emitting structure 11 is disposed on one side of the driving substrate 17. The side of the light-emitting structure 11 away from the driving substrate 17 can be the light-emitting side of the light-emitting structure 11, and the side of the light-emitting structure 11 facing the driving substrate 17 can be the backlight side of the light-emitting structure 11.

[0104] Specifically, in the above-described embodiment where the light-emitting structure 11 further includes a first electrode 115 and a second electrode 116, such as... Figure 7 As shown, the light-emitting structure 11 can be bonded to the driving substrate 17 via the first electrode 115 and the second electrode 116.

[0105] In some specific embodiments, the driving substrate 17 may include a driving circuit layer 171, a first driving electrode 172, and a second driving electrode 173. The driving circuit layer 171 includes a driving circuit, and the first driving electrode 172 and the second driving electrode 173 are disposed on the same side of the driving circuit layer 171 and are both electrically connected to the driving circuit.

[0106] Furthermore, in a specific implementation, the first electrode 115 of the light-emitting structure 11 can be bonded to the first driving electrode 172 of the driving substrate 17, and the second electrode 116 of the light-emitting structure 11 can be bonded to the second driving electrode 173 of the driving substrate 17, so as to realize the electrical connection between the light-emitting structure 11 and the driving substrate 17, thereby enabling the driving substrate 17 to drive the light-emitting structure 11 to emit light, so as to realize the display function of the micro light-emitting device 10.

[0107] Specifically, the aforementioned micro light-emitting device 10 may also include a bottom filler (not shown in the figure). The bottom filler is located between the light-emitting structure 11 and the driving substrate 17 and fills the gap between the light-emitting structure 11 and the driving substrate 17 to enhance the bonding strength between the light-emitting structure 11 and the driving substrate 17, thereby improving the reliability of the product.

[0108] In some examples, the aforementioned underfill adhesive can be obtained by filling the gap between the light-emitting structure 11 and the driving substrate 17 with an adhesive (e.g., epoxy resin adhesive) through an underfill process after bonding the light-emitting structure 11 to the driving substrate 17, and then curing the adhesive filled between the light-emitting structure 11 and the driving substrate 17.

[0109] In some examples, the aforementioned driving substrate 17 may be a driving chip or a driving wafer.

[0110] In some examples, the material of the first driving electrode 172 may include conductive materials such as titanium (Ti), aluminum (Al), gold (Au), platinum (Pt), and / or nickel (Ni). The material of the second driving electrode 173 may also include conductive materials such as titanium (Ti), aluminum (Al), gold (Au), platinum (Pt), and / or nickel (Ni). Furthermore, in specific implementations, the first driving electrode 172 and the second driving electrode 173 may be made of different materials and may be formed simultaneously.

[0111] In this embodiment, the aforementioned micro light-emitting device 10 can be applied not only to the projection part of electronic devices such as optical projection and head-up display (HUD), but also to the display part of electronic devices. For example, the electronic device may include any device with a display screen such as a smartphone, smartwatch, laptop, tablet, dashcam, navigator, or head-mounted device. It can also be applied to the lighting part of electronic devices such as vehicles or streetlights.

[0112] As can be seen from the above, the micro light-emitting device provided in this application embodiment, by setting a color filter structure and a focusing structure on the light-emitting side of the light-emitting structure in the micro light-emitting device, wherein the light-emitting structure has at least one light-emitting area, the color filter structure is located on the light-emitting side of the light-emitting structure and includes an extinction layer and at least one color filter unit, the extinction layer has at least one light-transmitting area, the at least one light-transmitting area is respectively arranged corresponding to the at least one light-emitting area, and the light emitted by the light-emitting structure in each light-emitting area is emitted through its corresponding light-transmitting area, each color filter unit is arranged corresponding to one light-emitting area and at least partially fills the light-transmitting area corresponding to its corresponding light-emitting area, and each color filter unit is configured to transmit light of the target color and reduce light of non-target color in the light emitted by the light-emitting structure in its corresponding light-emitting area, the focusing structure is located on the side of the color filter structure away from the light-emitting structure and includes at least one focusing unit, the at least one light-transmitting area is located on the light-emitting side of the light-emitting structure in the micro light-emitting device, and the at least one light-transmitting area is located on the light-emitting side of the light-emitting structure in the micro light-emitting device. Each focusing unit is respectively disposed corresponding to at least one of the above-mentioned light-transmitting areas, and each focusing unit is configured to converge the light emitted from its corresponding light-transmitting area. This enables the micro LED chip as a light-emitting structure to be packaged together with the color filter structure and the focusing structure to form a micro light-emitting device. In the micro light-emitting device, the matting layer of the color filter structure can absorb the wide-viewing-angle light emitted by the light-emitting area of ​​the micro LED chip, the color filter unit of the color filter structure can selectively reduce the non-target color light in the light emitted by the light-emitting area of ​​the micro LED chip, and the focusing unit of the focusing structure can convert the light emitted from the light-transmitting area with a relatively large viewing angle into light with a relatively small viewing angle. Therefore, it can improve the optical crosstalk problem between pixels of the micro LED chip, improve the color purity of the light emitted by the micro LED chip, and improve the positive viewing angle brightness of the micro LED chip, which is beneficial to improving the display performance of the Micro LED micro-display module.

[0113] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. The features, structures, or characteristics described above can be combined in any suitable manner in one or more embodiments.

[0114] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A miniature light-emitting device, characterized in that, include: A light-emitting structure having at least one light-emitting region; A color filtering structure is located on the light-emitting side of the light-emitting structure and includes an matting layer and at least one color filtering unit. The matting layer has at least one light-transmitting area, which is respectively disposed corresponding to the at least one light-emitting area. Light emitted by the light-emitting structure in each light-emitting area is emitted through its corresponding light-transmitting area. Each color filtering unit is disposed corresponding to one light-emitting area and is at least partially filled in the light-transmitting area corresponding to its corresponding light-emitting area. Each color filtering unit is configured to transmit light of the target color and reduce non-target color light in the light emitted by the light-emitting structure in its corresponding light-emitting area. A light-focusing structure is located on the side of the color filter structure opposite to the light-emitting structure, and includes at least one light-focusing unit, each of which is respectively disposed corresponding to the at least one light-transmitting area, and each light-focusing unit is configured to converge the light emitted from its corresponding light-transmitting area.

2. The micro light-emitting device according to claim 1, characterized in that, The light-concentrating structure further includes a substrate, and the at least one light-concentrating unit is disposed on one side of the substrate. The side of the light-concentrating structure with the at least one light-concentrating unit is connected to the side of the color filter structure opposite to the light-emitting structure by a first adhesive layer.

3. The micro light-emitting device according to claim 1, characterized in that, The light-concentrating unit includes a light-concentrating surface, which is a curved surface that is concave towards the light-emitting structure, and the light-concentrating surface of the light-concentrating unit is configured to converge the light emitted from its corresponding light-transmitting region.

4. The micro light-emitting device according to claim 1, characterized in that, The micro light-emitting device further includes a second adhesive layer, which is located between the color filter structure and the light-emitting structure, and connects the color filter structure and the light-emitting structure together.

5. The micro light-emitting device according to claim 4, characterized in that, The light-concentrating structure further includes a planarization layer, the at least one light-concentrating unit is disposed on one side of the planarization layer, the color filter structure is disposed on the side of the planarization layer opposite to the at least one light-concentrating unit, and the side of the color filter structure opposite to the planarization layer is connected to the light-emitting side of the light-emitting structure through the second adhesive layer.

6. The micro light-emitting device according to claim 1, characterized in that, The color filtering unit includes a color filtering layer, which is configured to transmit light of the target color and reflect or absorb light of a different color.

7. The micro light-emitting device according to claim 1, characterized in that, The color filtering unit includes a color conversion layer, which is configured to transmit light of the target color and convert light of a different color into light of the target color.

8. The micro light-emitting device according to claim 7, characterized in that, The color filtering unit further includes a color filtering layer, and in the color filtering unit, the color conversion layer and the color filtering layer are stacked sequentially in a direction away from the light-emitting structure. The color filtering layer of the color filtering unit is configured to transmit light of the target color and reflect or absorb light of a different color.

9. The micro light-emitting device according to claim 7, characterized in that, The number of light-emitting regions is multiple, and the light-emitting color of the light-emitting structure in each of the multiple light-emitting regions is the initial color; the number of color filtering units is multiple, and the multiple color filtering units include at least one first color filtering unit and at least one second color filtering unit; The color conversion layer of each of the first color filtering units is configured to: transmit light of the first target color and convert light of the initial color into light of the first target color, wherein the initial color is different from the first target color; The color conversion layer of each of the second color filtering units is configured to transmit light of the second target color and convert light of the initial color into light of the second target color, wherein the initial color is different from the second target color.

10. The micro light-emitting device according to claim 1, characterized in that, The light-emitting structure also has a non-light-emitting region disposed around each of the light-emitting regions, and includes a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a first electrode, and a second electrode; The light-emitting layer and the second semiconductor layer are located within the light-emitting area and are stacked sequentially on one side of the first semiconductor layer. The color filter structure is located on the side of the first semiconductor layer away from the light-emitting layer, and the light-concentrating structure is located on the side of the color filter structure away from the first semiconductor layer. The first electrode is located in the light-emitting area and is disposed on the side of the second semiconductor layer opposite to the light-emitting layer. The second electrode is located in the non-light-emitting area and is disposed on the side of the first semiconductor layer opposite to the color filter structure.

Images