Chemical vapor deposition apparatus

Abstract

This utility model relates to a chemical vapor deposition apparatus, which has a reaction chamber. The chemical vapor deposition apparatus also includes an upper electrode, a lower electrode, a mask, and an arc-extinguishing assembly. The upper and lower electrodes are vertically spaced within the reaction chamber, with the lower electrode supporting the substrate. The mask is installed on the inner wall of the reaction chamber and located above the lower electrode, serving to shield the edge of the substrate. The arc-extinguishing assembly includes a monitor, a gas ejector, and a controller. The monitor and gas ejector are installed on the inner wall of the reaction chamber, located between and adjacent to the mask and the upper electrode. The gas ejector is connected to an external gas source, and the monitor and gas ejector are connected to the controller. The monitor is used to monitor whether arc precursors appear in the area above the mask, and the controller is used to control the gas ejector to inject neutral particulate gas into the area where arc precursors appear, thereby blocking the formation of an arc in that area.

Description

Technical Field

[0001] This utility model relates to the field of display device manufacturing technology, and in particular to a chemical vapor deposition apparatus. Background Technology

[0002] In the manufacturing process of display devices, CVD (Chemical Vapor Deposition) is widely used in the preparation of display panels. Chemical vapor deposition refers to the process of using the plasma formed by the ionization of chemical gases to deposit a film on a glass substrate.

[0003] Existing chemical vapor deposition devices such as Figure 1 As shown, a lower electrode 2' and a lower electrode 3' are installed in the reaction chamber 1', and an upper electrode 2' is connected to a radio frequency power supply. The upper electrode 2' and the lower electrode 3' are vertically spaced within the reaction chamber 1'. A glass substrate 4' is located between the upper electrode 2' and the lower electrode 3', and a metal mask 5' is used to cover the non-coated area of ​​the glass substrate 4'. During chemical vapor deposition, gas is first introduced into the reaction chamber 1', and then the introduced gas is amplified into a plasma state using a radio frequency electric field and deposited on the surface of the glass substrate 4' to form a thin film structure.

[0004] The existing technology has the following shortcomings: During the vapor deposition process, the lower electrode 3' supports the glass substrate and moves it upward to approach the upper electrode 2', at which point the glass substrate 4' is adjacent to the upper electrode 2'. Due to the large potential difference between the upper electrode 2' and the lower electrode 3', the electric field within the reaction chamber 1' is complex, resulting in uneven distribution of charged particle concentration and significant differences in charge distribution. When a certain area has a high concentration of charged particles, leading to charge accumulation and the formation of a strong electric field, an electric arc may be triggered. Furthermore, the mask 5' above the glass substrate 4' is closest to the upper electrode 2' and is easily damaged by the electric arc. The damaged area has a higher roughness compared to other areas, making it easier for charge to accumulate. The temperature change rate at the damaged area is generally greater than at other areas. During vapor deposition on the glass substrate 4', this can cause continuous arcing at the damaged area, altering the charge on the damaged area and the nearby glass substrate 4', thus affecting the coating quality of the glass substrate 5'. Utility Model Content

[0005] The purpose of this invention is to provide a chemical vapor deposition device that can monitor whether arc precursors are generated in a local area above the mask plate and can prevent the formation of arcs in advance.

[0006] To achieve this objective, the present invention adopts the following technical solution:

[0007] A chemical vapor deposition apparatus is provided, comprising a reaction chamber, the chemical vapor deposition apparatus further comprising:

[0008] An upper electrode and a lower electrode are installed vertically spaced within the reaction chamber. The upper electrode is used to connect to a radio frequency power supply, and the lower electrode is used to support a substrate.

[0009] A mask plate is installed on the inner wall of the reaction chamber and located above the lower electrode. The mask plate is used to shield the non-coated area of ​​the substrate.

[0010] An arc-extinguishing assembly includes a monitor, a gas injector, and a controller. The monitor and the gas injector are installed on the inner wall of the reaction chamber, located between and adjacent to the mask plate and the upper electrode. The gas injector is connected to an external gas source. The monitor and the gas injector are respectively connected to the controller. The monitor is used to monitor whether arc precursors appear in the area above the mask plate. The controller is used to control the gas injector to inject neutral particle gas into the area where arc precursors appear, so as to block the formation of an arc in that area.

[0011] As a further embodiment of the chemical vapor deposition apparatus, the mask plate includes a plurality of mask sub-plates connected in sequence, all of which form a ring structure. Corresponding to each mask sub-plate, at least one set of the monitoring instruments and at least one set of the gas ejectors are installed on the inner wall of the reaction chamber.

[0012] As a further embodiment of the chemical vapor deposition apparatus, the inner wall of the reaction chamber is provided with a mounting groove, the opening of which faces the mask subplate in a horizontal direction, and the monitor and the gas jet are installed in the mounting groove.

[0013] As a further embodiment of the chemical vapor deposition apparatus, the length direction of the mounting groove is consistent with the length direction of the corresponding mask sub-plate. Along the length direction of the mounting groove, both ends of the mounting groove extend to the two ends of the length direction of the adjacent corresponding mask sub-plate. Multiple sets of gas ejectors are spaced apart along the length direction of the mounting groove. A set of monitoring instruments is provided above or below each set of gas ejectors. The monitoring instruments are selected from Hall sensors or thermal radiation detectors.

[0014] As a further embodiment of the chemical vapor deposition apparatus, the monitoring instrument includes a Hall sensor and a thermal radiation detector, which are installed in the mounting slot in a vertical direction, with the gas ejector located between the Hall sensor and the thermal radiation detector.

[0015] As a further embodiment of the chemical vapor deposition apparatus, the Hall sensor includes an encapsulation layer, a sensor body, a probe, and a first base plate. The sensor body is fixed in the mounting groove by the first base plate. The encapsulation layer wraps around the outer periphery of the sensor body and is fixedly connected to the first base plate. The probe protrudes from the end of the encapsulation layer away from the first base plate and is connected to the sensor body.

[0016] As a further embodiment of the chemical vapor deposition apparatus, the Hall sensor further includes a first cooling unit and a shielding layer. The first cooling unit is encapsulated within the encapsulation layer and is arranged around the outer periphery of the sensor body. The shielding layer is wrapped around the outer periphery of the encapsulation layer.

[0017] As a further embodiment of the chemical vapor deposition apparatus, the thermal radiation detector includes a protective sleeve, a detector body, a sapphire lens, and a second base plate. The detector body is fixed in the mounting groove by the second base plate. The protective sleeve is fitted around the outer periphery of the detector body. The sapphire lens is disposed at one end of the detector body away from the second base plate and protrudes from the protective sleeve. The protective sleeve is fixedly connected to the second base plate.

[0018] As a further embodiment of the chemical vapor deposition apparatus, the thermal radiation detector further includes a second cooling unit located inside the protective sleeve and surrounding the outer periphery of the detector body.

[0019] As a further embodiment of the chemical vapor deposition apparatus, the gas ejector is a pulsed gas ejector, and the gas source is argon or nitrogen.

[0020] The advantages of this invention compared to the prior art are as follows: By setting a monitor and a gas injector in the reaction chamber, with the monitor and gas injector positioned above and adjacent to the mask, when the monitor detects that the magnetic induction intensity or temperature change rate in a local area above the mask exceeds a threshold, it can be determined as an arc precursor. The controller will control the gas injector to spray neutral particle gas into the local area where the arc precursor occurs based on the arc precursor signal fed back by the monitor, so as to dilute the concentration of charged particles in the area and quickly suppress the formation of a local arc above the mask, thereby protecting the mask and the substrate. Attached Figure Description

[0021] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments.

[0022] Figure 1 This is a cross-sectional schematic diagram of a chemical vapor deposition apparatus in the prior art;

[0023] Figure 2 This is a cross-sectional schematic diagram of a chemical vapor deposition apparatus according to an embodiment of the present invention;

[0024] Figure 3 This is a schematic diagram showing the positions of the arc-extinguishing component (excluding the controller) and the mask plate in an embodiment of this utility model. Figure 1 ;

[0025] Figure 4 This is a schematic diagram showing the positions of the arc-extinguishing component (excluding the controller) and the mask plate in an embodiment of this utility model. Figure 2 ;

[0026] Figure 5 This is a cross-sectional view of the arc-extinguishing assembly on the side wall of the reaction chamber according to an embodiment of the present invention. Figure 1 ;

[0027] Figure 6 This is a cross-sectional view of the arc-extinguishing assembly on the side wall of the reaction chamber according to an embodiment of the present invention. Figure 2 ;

[0028] Figure 7 This is a cross-sectional view of the arc-extinguishing assembly on the side wall of the reaction chamber according to an embodiment of the present invention. Figure 3 .

[0029] Figure 1 middle:

[0030] 1' Reaction chamber; 2' Upper electrode; 3' Lower electrode; 4' Glass substrate; 5' Mask plate.

[0031] Figures 2 to 7 middle:

[0032] 1. Reaction chamber; 11. Mounting slot; 2. Upper electrode; 3. Lower electrode; 4. Mask plate; 41. Mask sub-plate; 5. Arc extinguishing assembly; 51. Monitor; 511. Hall sensor; 5111. Encapsulation layer; 5112. Sensor body; 5113. Probe head; 5114. First base plate; 5115. First cooling section; 51151. First pipe; 51152. Second pipe; 5116. Shielding layer; 512. Thermal radiation detector; 5121. Protective sleeve; 5122. Detector body; 5123. Sapphire lens; 5124. Second base plate; 5125. Second cooling section; 52. Gas ejector; 53. Controller;

[0033] 100. Substrate. Detailed Implementation

[0034] The advantages and features of this invention, as well as methods of implementing them, will become apparent from the following detailed description of the embodiments in conjunction with the accompanying drawings. However, this invention is not limited to the embodiments disclosed below, but can be implemented in various different forms. These embodiments are provided merely to complete the disclosure of this invention and to enable those skilled in the art to fully understand its scope, which is defined only by the scope of the claims. The same reference numerals denote the same constituent elements throughout the specification.

[0035] The present invention will now be described in detail with reference to the accompanying drawings.

[0036] like Figure 2 As shown, the chemical vapor deposition apparatus of this embodiment has a reaction chamber 1, and the chemical vapor deposition apparatus also includes an upper electrode 2, a lower electrode 3, a mask plate 4, and an arc extinguishing assembly 5.

[0037] The upper electrode 2 and the lower electrode 3 are vertically spaced within the reaction chamber 1. The upper electrode 2 is used to connect to a radio frequency power supply (not shown in the figure), and the lower electrode 3 is used to support the substrate 100. A mask plate 4 is installed on the inner wall of the reaction chamber 1 and located above the lower electrode 3. The mask plate 4 is used to shield the non-coated area of ​​the substrate 100. The arc extinguishing assembly 5 includes a monitor 51, a gas ejector 52, and a controller 53. The monitor 51 and the gas ejector 52 are installed on the inner wall of the reaction chamber 1. Both the monitor 51 and the gas ejector 52 are located between the mask plate 4 and the upper electrode 2 and are adjacent to the mask plate 4. The gas ejector 52 is connected to an external gas source. The monitor 51 and the gas ejector 52 are respectively connected to the controller 53. The monitor 51 is used to monitor whether there is an arc precursor in the area above the mask plate 4. The controller 53 is used to control the gas ejector 52 to spray neutral particle gas into the area where the arc precursor appears, so as to block the formation of an arc in that area.

[0038] It is understandable that when the plasma (charged particle) concentration in a certain area above the mask plate 4 is too high, it will lead to excessively high local magnetic induction intensity or excessively high temperature change rate in that area, thereby triggering an electric arc. In this embodiment, a monitor 51 and a gas jet injector 52 are set in the reaction chamber 1, positioned above and adjacent to the mask plate 4. When the monitor 51 detects that the magnetic induction intensity and / or temperature change rate in a certain local area above the mask plate 4 exceeds a threshold, it can be determined as an arc precursor. That is, a magnetic induction intensity exceeding a threshold or a temperature change rate exceeding a threshold can be used as an arc precursor. The controller 53 will control the gas jet injector 52 to spray neutral particle gas into the local area where the arc precursor occurs based on the arc precursor signal fed back by the monitor 51, so as to dilute the concentration of charged particles in that area, quickly suppress the formation of local electric arc in the reaction chamber 1, thereby achieving early blocking of the formation of electric arc, protecting the mask plate 4 and the substrate 100, and improving the film formation quality of the substrate 100.

[0039] Changes in the electric field are correlated with changes in magnetic flux density. Specifically, the quantitative relationship between magnetic flux density and electric field strength can be established through experimental calibration or simulation. When the magnetic flux density in a local area exceeds a threshold, the corresponding electric field strength will also exceed the corresponding threshold, thereby triggering the formation of an electric arc in that local area. Therefore, this embodiment can indirectly monitor the electric field strength by monitoring the magnetic flux density.

[0040] For example, a magnetic flux density exceeding the threshold of 1 μT or a temperature change rate exceeding the threshold of N °C / ms in a certain local area can be used as an arc precursor signal. The value of N needs to be determined based on the specific application scenario and experimental data, which will not be elaborated further.

[0041] The gas ejector 52 is connected to an external gas source via a connecting pipe, and the gas source supplies neutral particulate gas to the gas ejector 52. The controller 53 is installed outside the reaction chamber 1 for easy operation.

[0042] Furthermore, such as Figure 3 and Figure 4 As shown, the mask plate 4 includes multiple mask sub-plates 41 connected in sequence. All the mask sub-plates 41 form a ring structure. At least one set of monitoring instruments 51 and at least one set of gas injectors 52 are installed on the inner sidewall of the reaction chamber 1 corresponding to each mask sub-plate 41.

[0043] The shape of the mask 4 typically depends on the shape of the substrate 100. Conventionally, the substrate 100 used for display panels is rectangular; correspondingly, the mask 4 consists of four mask sub-plates 41 forming a rectangular ring structure, and the reaction chamber 1 is also cuboid in shape, i.e., it has four inner sidewalls. In existing vapor deposition processes, the upper surface of each mask sub-plate 41 is susceptible to arcing. In this embodiment, at least one set of monitoring instruments 51 and at least one set of gas ejectors 52 are installed on each inner sidewall of the reaction chamber 1, thereby enabling arc extinguishing treatment of each mask sub-plate 41 individually.

[0044] In some other embodiments, the shape of the mask plate 4 is not limited to a rectangle, but can also be an ellipse, a circle, etc. The shape of the reaction chamber 1 is not limited to a cuboid shape, but can also be an ellipse, a circle, etc. The number of mask sub-plates 41 is not limited to four, but can also be two, three or even more, depending on the shape of the substrate 100.

[0045] For a smaller substrate 100, the corresponding mask 4 is also smaller. In this case, a set of monitoring instruments 51 and a set of gas jet instruments 52 can be set for each mask sub-plate 41. Figure 3 As shown.

[0046] Furthermore, such as Figure 2 and Figure 3 As shown, the inner wall of the reaction chamber 1 is provided with a mounting groove 11, the opening of which faces the mask sub-plate 41 in a horizontal direction. The monitor 51 and the gas jet 52 are installed in the mounting groove 11. By opening the mounting groove 11 in the inner wall of the reaction chamber 1 and installing the monitor 51 and the gas jet 52 in the mounting groove 11, the monitor 51 and the gas jet 52 can be prevented from extending above the substrate 100 and affecting the film formation effect of the substrate 100.

[0047] Of course, the monitoring range of each monitoring unit 51 is limited, and the coverage area of ​​neutral particulate gas that each gas ejector unit 52 can spray is also limited. When the substrate 100 is large enough, the length of the corresponding mask sub-plate 41 will also increase accordingly. Figure 4 As shown, in order to improve the arc extinguishing effect, this embodiment provides multiple sets of monitoring instruments 51 and multiple sets of gas jet instruments 52 for each mask sub-plate 41 to avoid monitoring dead zones and gas jet dead zones above the mask sub-plate 41.

[0048] Specifically, the length direction of the mounting groove 11 is consistent with the length direction of the corresponding mask sub-plate 41. Along the length direction of the mounting groove 11, both ends of the mounting groove 11 extend to the two ends of the adjacent corresponding mask sub-plate 41. Multiple sets of gas ejectors 52 are spaced apart along the length direction of the mounting groove 11. A set of monitors 51 is located above or below each set of gas ejectors 52. The monitors 51 are Hall sensors 511 or thermal radiation detectors 512. When a Hall sensor 511 detects that the magnetic induction intensity of a local area above the mask sub-plate 41 exceeds a threshold, or when a thermal radiation detector 512 detects that the temperature change rate of a local area above the mask sub-plate 41 exceeds a threshold, the controller 53 controls the gas ejector 52 corresponding to that monitor 51 to eject neutral particulate gas, and the other gas ejectors 52 are not activated.

[0049] Optionally, such as Figure 5 As shown, a set of monitors 51 are provided below the gas ejector 52. The monitors 51 are Hall sensors 511, which can monitor whether the magnetic induction intensity of a certain local area on the corresponding mask subplate 41 exceeds the threshold. That is, the magnetic induction intensity exceeding the threshold is used as an arc precursor. In other embodiments, the Hall sensor 511 can also be placed above the gas ejector 52.

[0050] Alternatively, in other embodiments, such as Figure 6 As shown, a set of monitoring instruments 51 is provided above the gas ejector 52. The monitoring instrument 51 is a thermal radiation detector 512. In other embodiments, the thermal radiation detector 512 can also be placed below the gas ejector 52.

[0051] In this embodiment, the monitor 51 and the gas ejector 52 are arranged vertically at intervals and adjacent to each other. When the monitor 51 detects that the magnetic induction intensity or temperature change rate of a certain local area on the corresponding mask sub-plate 41 exceeds the threshold, the neutral particle gas ejected by the gas ejector 52 can cover the local area monitored by the monitor 51 to achieve precise arc extinguishing.

[0052] For example, the length of the mounting slot 11 can be designed to be slightly shorter than the length of the corresponding mask subplate 41, depending on the range that each monitoring instrument 51 can monitor and the range covered by the neutral particulate gas ejected by each gas ejector 52.

[0053] In a preferred embodiment, such as Figure 7As shown, the monitoring instrument 51 includes a Hall sensor 511 and a thermal radiation detector 512, which are installed in the mounting slot 11 along the vertical direction. The gas jet device 52 is located between the Hall sensor 511 and the thermal radiation detector 512. The Hall sensor 511 monitors whether the magnetic induction intensity of a local area above the corresponding mask sub-plate 41 exceeds a threshold, and the thermal radiation detector 512 monitors whether the temperature change rate of the local area above the corresponding mask sub-plate 41 exceeds a threshold. When either the magnetic induction intensity or the temperature change rate exceeds its corresponding threshold, or both parameters exceed their respective thresholds simultaneously, it can be determined as an arc precursor. This embodiment improves monitoring accuracy by employing two monitoring methods to monitor whether an arc precursor appears in the same local area.

[0054] like Figure 7 As shown, the thermal radiation detector 512 is located above the gas ejector 52, and the Hall sensor 511 is located below the gas ejector 52. In other embodiments, the Hall sensor 511 can also be positioned above the gas ejector 52, and the thermal radiation detector 512 can be positioned below the gas ejector 52 (not shown in the figure). With this arrangement, when an arc precursor (magnetic induction intensity exceeds the threshold) appears in the local area monitored by the Hall sensor 511 and / or an arc precursor (temperature change rate exceeds the threshold) appears in the local area monitored by the thermal radiation detector 512, the gas ejected by the gas ejector 52 located between the Hall sensor 511 and the thermal radiation detector 512 can dilute the concentration of charged particles in the local area where an arc precursor appears.

[0055] In this embodiment, the Hall sensor 511 includes an encapsulation layer 5111, a sensor body 5112, a probe 5113, and a first base plate 5114. The sensor body 5112 is fixed in the mounting groove 11 by the first base plate 5114. The encapsulation layer 5111 wraps around the outer periphery of the sensor body 5112 and is fixedly connected to the first base plate 5114. The probe 5113 protrudes from the end of the encapsulation layer 5111 away from the first base plate 5114 and is connected to the sensor body 5112.

[0056] Since vapor deposition is performed at high temperatures, in order to avoid damage to the sensor body 5112 due to high temperatures and to prevent the sensor body 5112 from being attacked by plasma, in this embodiment, the sensor body 5112 is placed inside the encapsulation layer 5111, and the encapsulation layer 5111 protects the sensor body 5112.

[0057] The encapsulation layer 5111 is made of ceramic material, which provides good protection; the surface of the probe 5113 is an arc surface, which can reduce airflow disturbance in the reaction chamber 1.

[0058] Furthermore, the Hall sensor 511 also includes a first cooling unit 5115, which is encapsulated within the encapsulation layer 5111 and surrounds the outer periphery of the sensor body 5112. The first cooling unit 5115 cools the sensor body 5112, keeping its temperature within a suitable range.

[0059] For example, the first cooling unit 5115 is a first liquid cooling pipe spirally arranged around the outer periphery of the sensor body 5112. The first liquid cooling pipe passes through the side wall of the reaction chamber 1 and is connected to an external refrigerant storage tank (not shown in the figure). A refrigerant, such as nitrogen, is introduced into the first liquid cooling pipe. The temperature of the nitrogen is transferred to the first liquid cooling pipe and then to the sensor body 5112 through the first liquid cooling pipe, thereby cooling the sensor body 5112.

[0060] Furthermore, the Hall sensor 511 also includes a shielding layer 5116, which wraps around the outer periphery of the encapsulation layer 5111. The shielding layer 5116 suppresses external interference magnetic fields, thereby improving the measurement accuracy and reliability of the Hall sensor 511.

[0061] Optionally, the thermal radiation detector 512 includes a protective sleeve 5121, a detector body 5122, a sapphire lens 5123, and a second base plate 5124. The detector body 5122 is fixed in the mounting groove 11 by the second base plate 5124. The protective sleeve 5121 is fitted around the outer periphery of the detector body 5122. The sapphire lens 5123 is located at the end of the detector body 5122 away from the second base plate 5124 and protrudes from the protective sleeve 5121. The protective sleeve 5121 is fixedly connected to the second base plate 5124.

[0062] The thermal radiation detector 512 is based on the Stefan-Boltzmann law, utilizing the proportionality between an object's radiant power and the fourth power of its temperature to determine temperature rise. When the rate of temperature change in a local area exceeds a threshold, an alarm signal is triggered. At this time, the controller 53 can control the gas ejector 52 pointing towards that area to inject neutral particulate gas to dilute the concentration of charged particles in that area. The thermal radiation detector 512 can achieve non-contact, high-precision temperature measurement. The thermal radiation detector 512 has strong anti-interference capabilities; a sapphire lens 5123 is provided at the front end of the detector body 5122, which suppresses plasma interference to the detector body 5122. The thermal radiation detector 512 has a fast response speed, enabling rapid scanning of the temperature field within the corresponding local area of ​​the substrate 100.

[0063] Among them, the protective sleeve 5121 is a zirconium oxide protective sleeve 5121, which can withstand a high temperature of 350℃.

[0064] Furthermore, the thermal radiation detector 512 also includes a second cooling unit 5125, which is located inside the protective sleeve 5121 and surrounds the outer periphery of the detector body 5122. The second cooling unit 5125 cools the detector body 5122, keeping the temperature of the detector body 5122 within a suitable range.

[0065] For example, the second cooling unit 5125 is a second liquid cooling pipe spirally arranged around the outer periphery of the detector body 5122. The second liquid cooling pipe passes through the side wall of the reaction chamber 1 and is connected to an external refrigerant storage tank (not shown in the figure). A refrigerant, such as nitrogen, is introduced into the second liquid cooling pipe. The temperature of the nitrogen is transferred to the second liquid cooling pipe and then to the detector body 5122 through the second liquid cooling pipe, thereby achieving the cooling of the detector body 5122.

[0066] In this embodiment, the first liquid cooling pipe and the second liquid cooling pipe have the same structure, both being a double-pipe structure. Taking the first liquid cooling pipe as an example, the first liquid cooling pipe includes a first pipe 51151 and a second pipe 51152. The first pipe 51151 and the second pipe 51152 are spirally wound around the outer periphery of the sensor body 5112 in parallel. The first pipe 51151 and the second pipe 51152 respectively have a first end away from the first base plate 5114 and a second end penetrating the first base plate 5114 and the side wall of the reaction chamber 1. The first end of the first pipe 51151 and the first end of the second pipe 51152 are connected. The second end of the first pipe 51151 and the second end of the second pipe 51152 are respectively connected to a heat exchanger (not shown in the figure). The refrigerant is recycled after heat exchange through the heat exchanger. The structure of the heat exchanger is conventional technology in the field and will not be described in detail.

[0067] Furthermore, the first liquid cooling pipe and the second liquid cooling pipe are connected to the same heat exchanger.

[0068] In this embodiment, the gas ejector 52 is a pulsed gas ejector, and the gas source is argon or nitrogen. Argon or nitrogen can be used as a neutral particle gas. When the gas ejector 52 is used to inject the gas into the area where the precursor of electric arc appears, it can effectively dilute the concentration of charged particles in the area (reducing it by 50%-70%) and the temperature (from 5eV-10eV to below 2eV), thereby achieving the effect of preventing the formation of electric arc in advance.

[0069] Although embodiments of the present invention have been described above with reference to the accompanying drawings, the present invention is not limited to the above embodiments, but can be made in various forms, and those skilled in the art will understand that the present invention can be implemented in other specific forms without changing the technical spirit or essential characteristics of the present invention. Therefore, it should be understood that the above embodiments are exemplary in all respects and not restrictive.

Claims

1. A chemical vapor deposition apparatus, comprising a reaction chamber, characterized in that, The chemical vapor deposition apparatus also includes: An upper electrode and a lower electrode are installed vertically spaced within the reaction chamber. The upper electrode is used to connect to a radio frequency power supply, and the lower electrode is used to support a substrate. A mask plate is installed on the inner wall of the reaction chamber and located above the lower electrode. The mask plate is used to shield the non-coated area of ​​the substrate. An arc-extinguishing assembly includes a monitor, a gas injector, and a controller. The monitor and the gas injector are installed on the inner wall of the reaction chamber, located between and adjacent to the mask plate and the upper electrode. The gas injector is connected to an external gas source. The monitor and the gas injector are respectively connected to the controller. The monitor is used to monitor whether arc precursors appear in the area above the mask plate. The controller is used to control the gas injector to inject neutral particle gas into the area where arc precursors appear, so as to block the formation of an arc in that area.

2. The chemical vapor deposition apparatus according to claim 1, characterized in that, The mask plate includes multiple mask sub-plates connected in sequence, and all the mask sub-plates form a ring structure. For each mask sub-plate, at least one set of the monitoring instrument and at least one set of the gas injector are installed on the inner wall of the reaction chamber.

3. The chemical vapor deposition apparatus according to claim 2, characterized in that, The inner wall of the reaction chamber is provided with a mounting groove, the opening of which faces the mask sub-plate in a horizontal direction, and the monitor and the gas injector are installed in the mounting groove.

4. The chemical vapor deposition apparatus according to claim 3, characterized in that, The length direction of the mounting groove is consistent with the length direction of the corresponding mask sub-plate. Along the length direction of the mounting groove, both ends of the mounting groove extend to the two ends of the length direction of the adjacent corresponding mask sub-plate. Multiple sets of gas ejectors are spaced apart along the length direction of the mounting groove. A set of monitoring instruments is provided above or below each set of gas ejectors. The monitoring instruments are Hall sensors or thermal radiation detectors.

5. The chemical vapor deposition apparatus according to claim 3, characterized in that, The monitoring instrument includes a Hall sensor and a thermal radiation detector, which are installed in the mounting slot in a vertical direction, with the gas jet device located between the Hall sensor and the thermal radiation detector.

6. The chemical vapor deposition apparatus according to claim 4 or 5, characterized in that, The Hall sensor includes an encapsulation layer, a sensor body, a probe, and a first base plate. The sensor body is fixed in the mounting groove by the first base plate. The encapsulation layer wraps around the outer periphery of the sensor body and is fixedly connected to the first base plate. The probe protrudes from the end of the encapsulation layer away from the first base plate and is connected to the sensor body.

7. The chemical vapor deposition apparatus according to claim 6, characterized in that, The Hall sensor further includes a first cooling unit and a shielding layer. The first cooling unit is encapsulated within the encapsulation layer and is arranged around the outer periphery of the sensor body. The shielding layer is wrapped around the outer periphery of the encapsulation layer.

8. The chemical vapor deposition apparatus according to claim 4 or 5, characterized in that, The thermal radiation detector includes a protective sleeve, a detector body, a sapphire lens, and a second base plate. The detector body is fixed in the mounting groove by the second base plate. The protective sleeve is fitted around the outer periphery of the detector body. The sapphire lens is located at the end of the detector body away from the second base plate and protrudes from the protective sleeve. The protective sleeve is fixedly connected to the second base plate.

9. The chemical vapor deposition apparatus according to claim 8, characterized in that, The thermal radiation detector also includes a second cooling unit, which is located inside the protective sleeve and surrounds the outer periphery of the detector body.

10. The chemical vapor deposition apparatus according to any one of claims 1 to 5, characterized in that, The gas ejector is a pulse gas ejector, and the gas source is argon or nitrogen.

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