semiconductor structure
By rounding sharp corners on a semiconductor substrate to form a capacitor, the problem of tip discharge in deep trench capacitors is solved, improving the reliability of the capacitor and the stability of the equipment.
CN224290495UActive Publication Date: 2026-05-26TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
- Filing Date
- 2025-04-23
- Publication Date
- 2026-05-26
AI Technical Summary
Technical Problem
Existing semiconductor structures suffer from tip discharge when forming deep trench capacitors, leading to device damage and insufficient capacitor reliability.
Method used
After forming a patterned mask on a semiconductor substrate, a trimming process is performed to turn sharp corners into rounded corners, and capacitors are formed above the dielectric pads and in the trenches to reduce the occurrence of tip discharge.
Benefits of technology
This improves the reliability of deep trench capacitors in semiconductor structures and avoids equipment damage caused by tip discharge.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN224290495U_ABST
Abstract
A semiconductor structure is provided. The semiconductor structure includes a capacitor disposed in and above a substrate, the capacitor including a first portion extending into a first region of the substrate, a second portion extending into a second region of the substrate, and a third portion disposed above a third region of the substrate and extending from the first portion to the second portion. The third region of the substrate may include an upper portion having an inverted trapezoidal profile with multiple rounded corners.
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