A new embedded power module
By pre-packaging power devices into single-tube form and embedding them into the circuit board, the problems of high parasitic inductance and complex manufacturing process in traditional motor controllers are solved, realizing an embedded power module with low inductance, low loss and high yield.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- JIANG SU JIN MAI DIAN KONG KE JI YOU XIAN GONG SI
- Filing Date
- 2025-05-19
- Publication Date
- 2026-05-29
AI Technical Summary
Traditional motor controllers have high parasitic inductance in their power modules, resulting in large switching losses. Embedded solutions are complex to manufacture and defective products are difficult to detect early, leading to low yield and increased costs.
Power devices are pre-packaged into single tubes, embedded in circuit boards, and connected to terminals via thermally conductive insulating carriers to form a stacked structure, eliminating the need for top copper plating and enabling efficient testing.
It reduces parasitic inductance, increases switching frequency, simplifies the process, improves yield and product reliability, and reduces costs.
Smart Images
Figure CN224306326U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of power device technology, specifically a novel embedded power module. Background Technology
[0002] With the development and popularization of new energy vehicles, the importance of motor controllers, as the core components of electric drives, is constantly increasing. As the number of new energy vehicles continues to grow, traditional motor controller design ideas can no longer meet the increasing demand, and performance is gradually encountering bottlenecks. With the continuous development of third-generation semiconductors SiC and GaN, the trend of miniaturization of motor controllers is becoming increasingly obvious.
[0003] Traditional motor controller power modules are based on welding or sintering power devices onto a ceramic substrate, conducting circuits through bonding wires, and then welding terminals and potting with glue for curing. This approach results in high parasitic inductance and large switching losses.
[0004] To address these issues, embedded power device solutions have emerged. However, current embedded power device solutions involve sintering or soldering the power devices onto a copper plate before embedding them into the circuit board. This necessitates a copper plating layer on top of the power devices, a capability that most power device suppliers lack. This results in high process complexity, difficulty in controlling reliability, and limited room for cost reduction. Furthermore, mounting power devices on a copper plate makes testing inconvenient; defective products are only detected during post-packaging testing, leading to low final product yield and increased costs.
[0005] In view of this, we propose a novel embedded power module. Utility Model Content
[0006] The purpose of this utility model is to provide a novel embedded power module. By pre-packaging power devices into single transistors and completing testing before embedding them into a circuit board, this not only maintains the advantages of low parasitic inductance and fast switching speed of embedded solutions, but also eliminates the need for copper plating on the top of the power devices. Furthermore, it allows for efficient testing after pre-packaging into single transistors, thus protecting the design concept of embedding power devices into circuit boards after pre-packaging into single transistors, the layered structure design of circuit board packaging, and the purpose of pre-packaging power devices into forms with insulating layers, including single transistors or multiple parallel connections, or even half-bridges.
[0007] To achieve the above objectives, this utility model provides the following technical solution:
[0008] A novel embedded power module includes a thermally conductive insulating carrier, which comprises an upper conductive layer, an insulating and thermally conductive layer, and a lower conductive layer. A power device is disposed at the middle position of the upper end of the upper conductive layer, a gate terminal is disposed at the left position of the upper end of the upper conductive layer, a drain terminal is disposed at the right position of the upper end of the upper conductive layer, and a source terminal is disposed at the upper end of the power device.
[0009] Preferably, the power device is connected to the upper conductive layer via a first connection layer, the gate terminal is connected to the upper conductive layer via a fourth connection layer, the drain terminal is connected to the upper conductive layer via a second connection layer, and the source terminal is connected to the power device via a third connection layer.
[0010] Preferably, the gate position of the power device is connected to the upper conductive layer below the gate terminal via a connecting line.
[0011] Preferably, the surfaces of the upper conductive layer, the insulating and thermally conductive layer, the lower conductive layer, the power device, the gate terminal, the drain terminal, and the source terminal are encapsulated with a molding compound to form a single-tube pre-packaged power device.
[0012] Preferably, the power device is pre-packaged and installed in the inner circuit board, which includes a circuit board insulating layer one, a circuit board conductive layer one, and a conductive metal blind via one, or a circuit board insulating layer two, a circuit board conductive layer two, and a conductive metal blind via two, or a circuit board insulating layer three, a circuit board conductive layer three, and a conductive metal blind via three.
[0013] Preferably, a prepreg and copper foil are stacked on top of each other in the pre-packaged single-tube power device. The prepreg forms an insulating layer of the circuit board, and the copper foil forms a conductive layer of the circuit board. Blind holes are drilled and copper is plated on the insulating layer and the conductive layer of the circuit board to increase the copper thickness and form conductive metal blind holes. The pre-packaged single-tube power device, the inner circuit board, the insulating layer of the circuit board, the conductive layer of the circuit board, and the conductive metal blind holes form a stacked structure.
[0014] By employing the above technical solution, this utility model provides a novel embedded power module. It possesses at least the following beneficial effects:
[0015] (1) Compared with traditional packaging, the embedded power device mentioned in this utility model can have a ceramic capacitor surface-mounted on the top of the circuit board, which shortens the current path and reduces parasitic inductance. At the same time, the lower parasitic inductance increases the switching frequency and reduces the switching loss.
[0016] (2) The embedded power device of this utility model is compatible with chips of different types (such as IGBT and SiC MOSFET) and sizes and thicknesses (such as IGBT and FRD). The embedded solution based on single-tube packaging has a higher degree of modularity. At the same time, the power device can be efficiently tested after pre-packaging, and good products can be selected for embedding, which effectively improves the yield rate. The copper plating process on the top surface of the chip is no longer required during manufacturing, which reduces the complexity of the process and improves the reliability of the product. Attached Figure Description
[0017] The accompanying drawings, which are included to provide a further understanding of the present invention, form part of this application:
[0018] Figure 1 This is a schematic diagram of a single-tube pre-packaged power device according to the present invention;
[0019] Figure 2 This is a schematic diagram of a single-transistor packaged embedded solution for the power device of this utility model.
[0020] Figure 3 This is a schematic diagram of the second embedded single-tube package for power devices according to this utility model;
[0021] Figure 4 This is a schematic diagram of the third embedded solution for the single-tube package of the power device of this utility model.
[0022] In the diagram: 100, Power device single-tube pre-package; 110, Power device; 120, Gate terminal; 121, Source terminal; 122, Drain terminal; 130, Connection layer one; 131, Connection layer two; 132, Connection layer three; 133, Connection layer four; 140, Thermally conductive insulating carrier; 140a, Upper conductive layer; 140b, Insulating and thermally conductive layer; 140c, Lower conductive layer; 150, Molding compound; 160, Connecting wire; 210, Circuit board insulating layer one; 220, Circuit board conductive layer one; 230, Conductive metal blind via one; 310, Circuit board insulating layer two; 320, Circuit board conductive layer two; 330, Conductive metal blind via two; 410, Circuit board insulating layer three; 420, Circuit board conductive layer three; 430, Conductive metal blind via three. Detailed Implementation
[0023] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.
[0024] Please see Figure 1 - Figure 3 As shown, a novel embedded power module includes a thermally conductive insulating carrier 140. The thermally conductive insulating carrier 140 includes an upper conductive layer 140a, an insulating and thermally conductive layer 140b, and a lower conductive layer 140c. A power device 110 is disposed at the middle position of the upper end of the upper conductive layer 140a, a gate terminal 120 is disposed at the left position of the upper end of the upper conductive layer 140a, a drain terminal 122 is disposed at the right position of the upper end of the upper conductive layer 140a, and a source terminal 121 is disposed at the upper end of the power device 110.
[0025] The thermally conductive insulating carrier 140 includes, but is not limited to, DBC, AMB, AlN, and high thermal conductivity resin circuit boards; the upper conductive layer 140a is made of, but is not limited to, copper and aluminum; the insulating and thermally conductive layer 140b is made of, but is not limited to, thermally conductive and insulating materials such as SiN, Al2O3, AlN, and ZTA; the lower conductive layer 140c is made of, but is not limited to, copper and aluminum; the power device 110 includes, but is not limited to, Si MOSFET, IGBT, SiC MOSFET, GaN, and HEMT; the gate terminal 120 is made of metal, including, but not limited to, copper and aluminum; the drain terminal 122 is made of metal, including, but not limited to, copper and aluminum; and the source terminal 121 is made of metal, including, but not limited to, copper and aluminum.
[0026] Power device 110 is connected to upper conductive layer 140a through connection layer 130, gate terminal 120 is connected to upper conductive layer 140a through connection layer 4 133, drain terminal 122 is connected to upper conductive layer 140a through connection layer 2 131, and source terminal 121 is connected to power device 110 through connection layer 3 132.
[0027] The connection methods for all connection layers include, but are not limited to, sintered silver, sintered copper, and solder.
[0028] The gate position of the power device 110 is connected to the upper conductive layer 140a below the gate terminal 120 via a connection line 160, wherein the connection method of the connection line 160 includes, but is not limited to, bonding line and clip.
[0029] The surfaces of the upper conductive layer 140a, the insulating and thermally conductive layer 140b, the lower conductive layer 140c, the power device 110, the gate terminal 120, the drain terminal 122, and the source terminal 121 are encapsulated with molding compound 150 to form a single-tube pre-packaged power device 100.
[0030] Among them, the power device single-tube pre-package 100 is to take out the electrodes of the power device, such as the gate, drain and source of MOSFET, or other terminals that serve to drive, measure and protect, and pre-package them into a single tube form, with no limit on its size and thickness.
[0031] The pre-packaging process for single power devices includes:
[0032] 1. Prepare a thermally conductive insulating carrier 140;
[0033] 2. The circuitry is etched onto the thermally conductive insulating carrier 140 according to the design;
[0034] 3. Connect the power device 110 to the upper conductive layer 140a through the connection layer 130;
[0035] 4. Connect the gate terminal 120, the source terminal 121, and the drain terminal 122 to the upper conductive layer 140a and the power device 110 respectively through the fourth connection layer 133, the third connection layer 132, and the second connection layer 131.
[0036] 5. Connect the gate of power device 110 to the upper conductive layer 140a below the gate terminal 120 via 160;
[0037] 6. After connecting the components, encapsulate them with 150mm plastic and cut them into single tubes to obtain a single power device tube.
[0038] The power device single-tube pre-package 100 is installed in the inner circuit board, which includes circuit board insulating layer 1 210, circuit board conductive layer 1 220, conductive metal blind via 1 230, or circuit board insulating layer 2 310, circuit board conductive layer 2 320, conductive metal blind via 2 330, or circuit board insulating layer 3 410, circuit board conductive layer 3 420, conductive metal blind via 3 430.
[0039] Prepreg and copper foil are stacked on the upper and lower layers of the power device single tube pre-package 100. The prepreg forms the circuit board insulating layer, and the copper foil forms the circuit board conductive layer. Blind holes are drilled and copper is plated on the circuit board insulating layer and the circuit board conductive layer to increase the copper thickness and form conductive metal blind holes. The power device single tube pre-package 100, inner circuit board, circuit board insulating layer, circuit board conductive layer and conductive metal blind holes form a stacked structure.
[0040] Among them, the solutions for embedding a single power device package 100 into a circuit board include, but are not limited to, the following three:
[0041] Option 1:
[0042] Step S1: Fabricate the circuitry and cut grooves on the inner circuit board;
[0043] Step S2: Place the pre-packaged 100 single tube of the power device into the slot, and stack the prepreg and copper foil on the top and bottom;
[0044] Step S3: Heat and press the prepreg to fill the gaps after melting, cool down and solidify to form the circuit board insulation layer 210, and the copper foil to form the circuit board conductive layer 220.
[0045] Step S4: Drill blind vias in the outermost layer, plate copper to increase the copper thickness of the outermost layer and form conductive metal blind vias 230, and etch the circuit according to the design.
[0046] Step S5: Next, pre-stack the prepreg and copper foil on the upper and lower layers of the outermost layer;
[0047] Step S6: Heat and press the prepreg to melt and fill the gaps. After cooling, it solidifies to form the circuit board insulation layer 210 and the copper foil to form the circuit board conductive layer 220.
[0048] Step S7: Drill blind holes on the outer layer, plate copper to form conductive metal blind holes -230, design etched circuits, print solder mask and perform anti-oxidation surface treatment.
[0049] Option 2:
[0050] Step S21: Fabricate the circuitry and cut grooves on the inner circuit board;
[0051] Step S22: Place the single tube of the power device pre-package 100 into the slot, and stack a prepreg and copper foil on top, and stack a prepreg and single-sided core board on the bottom. Both are slotted, and the slotting position is consistent with the slotting position of the inner circuit board, so that the single tube of the power device pre-package 100 can pass through and remain on the same horizontal plane as its bottom.
[0052] Step S23: Heat and press the prepreg to melt and fill the gaps. After cooling, it solidifies to form the second insulating layer 310 of the circuit board, and the copper foil forms the second conductive layer 320 of the circuit board.
[0053] Step S24: Drill blind vias in the outermost layer, plate copper, increase the copper thickness of the outermost layer and form conductive metal blind via 330, and etch the circuit according to the design.
[0054] Step S25: Then pre-stack the prepreg and copper foil on the upper and lower layers of the outermost layer;
[0055] Step S26: Heat and press the prepreg to melt and fill the gaps. After cooling, it solidifies to form the second insulating layer 310 of the circuit board, and the copper foil forms the second conductive layer 320 of the circuit board.
[0056] Step S27: Drill blind holes on the outer layer, plate copper to form conductive metal blind holes 330, design etched circuits, print solder mask and perform anti-oxidation surface treatment.
[0057] Option 3:
[0058] Step S31: Fabricate circuits and cut grooves on two inner layer circuit boards, and cut grooves on one prepreg.
[0059] Step S32: Pre-stack the pre-grooved prepreg between the two pre-grooved inner circuit boards, with the grooves aligned. Place the single pre-packaged power device 100 into the groove, ensuring that the height of the single pre-packaged power device 100 is consistent with the overall height of the two inner circuit boards and the prepreg. Then, stack the prepreg and copper foil on top.
[0060] Step S33: Heat and press the prepreg to melt and fill the gaps. After cooling, it solidifies to form the circuit board insulation layer 3 410 and the copper foil to form the circuit board conductive layer 3 420.
[0061] Step S34: Drill blind holes in the outermost layer, plate copper, increase the copper thickness of the outermost layer and form conductive metal blind holes 430. At the same time as copper plating, the copper thickness at the bottom of the circuit board will also increase, and the copper at the bottom of the single tube pre-package 100 will be connected with the copper at the bottom of the circuit board. Then, etch the circuit according to the design.
[0062] Step S35: Pre-stack prepreg and copper foil on the outermost layer;
[0063] Step S36: Heat and press the prepreg to melt and fill the gaps. After cooling, it solidifies to form the circuit board insulation layer 3 410 and the copper foil to form the circuit board conductive layer 3 420.
[0064] Step S37: Drill blind holes on the outer layer, plate copper to form conductive metal blind holes 430. At the same time, the copper thickness on the bottom of the circuit board will also increase. Etch the circuit according to the design, print solder mask and perform anti-oxidation surface treatment.
[0065] In this process, a single power device is pre-packaged and embedded into the circuit board. The stacked structure can be any layer of circuit board, such as... Figure 2 , Figure 3 , Figure 4 For example, there are 6 conductive layers; and shunt resistors can also be selectively embedded inside the circuit board package to realize the function of current detection and replace the traditional current sensor components; copper terminals can also be selectively embedded inside the circuit board package as the input and output of large DC+ / DC- / AC current.
[0066] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.
[0067] Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the appended claims and their equivalents.
Claims
1. A novel embedded power module, comprising a thermally conductive insulating carrier (140), characterized in that: The thermally conductive insulating carrier (140) includes an upper conductive layer (140a), an insulating and thermally conductive layer (140b), and a lower conductive layer (140c). A power device (110) is disposed at the middle position of the upper end of the upper conductive layer (140a), a gate terminal (120) is disposed at the left position of the upper end of the upper conductive layer (140a), a drain terminal (122) is disposed at the right position of the upper end of the upper conductive layer (140a), and a source terminal (121) is disposed at the upper end of the power device (110).
2. The novel embedded power module according to claim 1, characterized in that: The power device (110) is connected to the upper conductive layer (140a) through a first connection layer (130), the gate terminal (120) is connected to the upper conductive layer (140a) through a fourth connection layer (133), the drain terminal (122) is connected to the upper conductive layer (140a) through a second connection layer (131), and the source terminal (121) is connected to the power device (110) through a third connection layer (132).
3. The novel embedded power module according to claim 1, characterized in that: The gate position of the power device (110) is connected to the upper conductive layer (140a) below the gate terminal (120) via a connecting line (160).
4. A novel embedded power module according to claim 1, characterized in that: The surfaces of the upper conductive layer (140a), the insulating and thermally conductive layer (140b), the lower conductive layer (140c), the power device (110), the gate terminal (120), the drain terminal (122), and the source terminal (121) are encapsulated with a molding compound (150) to form a single-tube pre-package (100) for the power device.
5. A novel embedded power module according to claim 4, characterized in that: The power device single-tube pre-package (100) is installed in the inner circuit board, which includes a circuit board insulating layer one (210), a circuit board conductive layer one (220), and a conductive metal blind via one (230), or a circuit board insulating layer two (310), a circuit board conductive layer two (320), and a conductive metal blind via two (330), or a circuit board insulating layer three (410), a circuit board conductive layer three (420), and a conductive metal blind via three (430).
6. A novel embedded power module according to claim 5, characterized in that: The prepreg and copper foil are stacked on the upper and lower layers of the power device single tube pre-package (100). The prepreg forms the circuit board insulating layer, and the copper foil forms the circuit board conductive layer. Blind holes are drilled and copper is plated on the circuit board insulating layer and the circuit board conductive layer to increase the copper thickness and form conductive metal blind holes. The power device single tube pre-package (100), inner circuit board, circuit board insulating layer, circuit board conductive layer and conductive metal blind holes form a stacked structure.