A high-temperature-resistant silicon carbide power module packaging structure

Abstract

The utility model belongs to the technical field of power electronic device, more specifically, it is a kind of silicon carbide power module packaging structure of high temperature resistance. The silicon carbide power module high temperature packaging structure of high temperature resistance, including multiple parallel silicon carbide power devices and the metal connecting wire of connecting each silicon carbide power device, still includes substrate and radiator, silicon carbide power device is interconnected with substrate by nano silver sintering technology, and substrate is directly connected with radiator. The structure is directly connected radiator by using, and nano silver sintering technology is used to realize the whole high heat dissipation performance of module, has excellent high temperature resistance, increases the service life of module under the condition of large current work.

Description

Technical Field

[0001] This utility model relates to the field of power electronic device technology, and in particular to a high-temperature resistant silicon carbide power module packaging structure. Background Technology

[0002] Renewable energy sources are not only a supplement to conventional energy, but are also attempting to replace them. In particular, wind power equipment employing power electronics technology is being adopted worldwide, especially in countries with urgent energy needs, where offshore wind power is playing an increasingly important role. As the power output of wind turbines increases, higher technical requirements are being placed on power semiconductor devices.

[0003] Traditional silicon-based power devices are limited by the inherent physical properties of silicon, encountering insurmountable difficulties in high-frequency, high-power applications. Currently, power semiconductor devices made of silicon carbide (SiC) are attracting increasing attention due to their high operating temperature, low on-resistance, fast switching speed, and high switching frequency. Parallel-connected SiC power devices are crucial in certain applications, such as electric vehicles (EVs), to meet the high power and high temperature requirements of smaller device footprints. In parallel operation, SiC power chips often operate under high current conditions, posing a significant challenge to the module's high-temperature resistance. However, existing packaging technologies struggle to fully unlock the device's performance, making the module's high-temperature resistance a particularly significant limitation for high-current SiC power modules. Summary of the Invention

[0004] The purpose of this invention is to address the shortcomings of existing technologies by proposing a high-temperature resistant silicon carbide power module packaging structure.

[0005] This utility model provides the following technical solution: a high-temperature resistant silicon carbide power module packaging structure, including an insulating shell, which is divided into an upper insulating shell and a lower insulating shell. A substrate is disposed inside the lower insulating shell, and a heat sink is disposed under the substrate. A solder layer is disposed between the substrate and the heat sink. The lower insulating shell has a heat sink placement groove. A silicon carbide power chip and power terminals are disposed on the substrate. A solder layer and a ceramic layer are disposed between the substrate, the silicon carbide power chip, and the power terminals. The silicon carbide power chip is connected via metal connecting wires.

[0006] Preferably, the metal connecting wire is made of copper or aluminum, etc.

[0007] Preferably, the nano-silver layer is 25 μm thick, and the silicon carbide power chip is sintered together with the substrate and the substrate with the power terminals through a sintering process.

[0008] Preferably, the heat sink is directly soldered to the substrate.

[0009] Preferably, the ceramic layer is selected from DBC with a silicon nitride substrate.

[0010] Preferably, the upper insulating shell and the lower insulating shell are tightly connected by locking screws.

[0011] Preferably, the substrate, silicon carbide power chip, and power terminals are disposed within epoxy resin.

[0012] The beneficial effects of this utility model are:

[0013] 1. This utility model uses a sintering process to attach a 25-micron-thick nano-silver layer onto a DBC substrate. The nano-silver layer is composed of nano-silver particles and organic solvent. During the sintering process, the organic solvent is removed by evaporation or decomposition. Compared with traditional solder, nano-silver improves bonding reliability at temperatures up to 300°C, making silicon carbide power chips suitable for operation in high-temperature ranges.

[0014] 2. This invention selects a DBC with a silicon nitride (Si3N4) substrate. The thermal conductivity of silicon nitride is 2.5 times higher than that of commonly used alumina, resulting in better heat dissipation and excellent high-temperature resistance.

[0015] 3. The heat sink proposed in this utility model is directly soldered into the DBC copper layer, thereby shortening the heat transfer path and increasing the heat dissipation capacity.

[0016] 4. The heat generated by the chip of this utility model can be mostly transferred to the heat sink through the DBC, silicon nitride substrate, substrate, etc., to achieve good heat dissipation performance.

[0017] 5. The entire module of this utility model is made of epoxy resin, which ensures its high temperature resistance and firmness. Attached Figure Description

[0018] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is an exploded view of the structure of this utility model;

[0020] Figure 2 This is a schematic diagram of the substrate structure of this utility model;

[0021] The components are: 1. Upper insulating shell; 2. Lower insulating shell; 3. Locking screw; 4. Heat sink; 5. Metal connecting wire; 6. Silicon carbide power chip; 7. Nano silver layer; 8. Through hole; 9. Substrate; 10. Ceramic layer; 11. Power terminal. Detailed Implementation

[0022] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, and the accompanying drawings are simplified schematic diagrams, which only illustrate the basic structure of the present invention in a schematic manner. Therefore, they only show the components related to the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0023] Please see Figures 1-2 A high-temperature resistant silicon carbide power module packaging structure includes a lower insulating shell and an upper insulating shell. A substrate is disposed inside the lower insulating shell, and a heat sink is disposed beneath the substrate. A solder layer is disposed between the substrate and the heat sink. The lower insulating shell has a heat sink placement groove. A silicon carbide power chip and power terminals are disposed on the substrate. A nano-silver layer and a ceramic layer are disposed between the substrate, the silicon carbide power chip, and the power terminals. The silicon carbide power chip is connected by metal interconnects, such as copper or aluminum. The nano-silver layer is 25µm thick. The silicon carbide power chip, substrate, and power terminals are sintered together using a sintering process. The heat sink is directly soldered to the substrate. The ceramic layer is selected as DBC with a silicon nitride (Si3N4) substrate. The upper and lower insulating shells are connected by locking screws. The substrate, silicon carbide power chip, and power terminals are all encased in epoxy resin.

[0024] This invention uses a sintering process to attach a 25-micron-thick nano-silver layer onto a DBC substrate. The nano-silver layer is composed of nano-silver particles and organic solvent. During the sintering process, the organic solvent is removed by evaporation or decomposition. Compared with traditional solder, nano-silver improves bonding reliability at temperatures up to 300°C, making silicon carbide power chips suitable for operation in high-temperature ranges.

[0025] This invention selects a DBC with a silicon nitride (Si3N4) substrate. Silicon nitride has a thermal conductivity 2.5 times higher than that of commonly used alumina, resulting in better heat dissipation and excellent high-temperature resistance.

[0026] The heat sink proposed in this invention is directly soldered into the DBC copper layer, thereby shortening the heat transfer path and increasing the heat dissipation capacity.

[0027] The heat generated by the chip of this invention can be mostly transferred to the heat sink through the DBC, silicon nitride substrate, and substrate, achieving good heat dissipation performance.

[0028] The entire module of this utility model is made of epoxy resin, which ensures its high temperature resistance and strongness.

[0029] In summary, this invention has better high-temperature resistance, heat dissipation, and a longer service life.

[0030] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those skilled in the art that various changes, modifications and variations can be made to these embodiments without departing from the principles and spirit of the present invention. The scope of protection of the present invention is defined by the appended claims and their equivalents.

Claims

1. A high-temperature resistant silicon carbide power module packaging structure, characterized in that, The device includes a lower insulating shell (2) and an upper insulating shell (1). A substrate (9) is disposed inside the lower insulating shell (2). A heat sink (4) is disposed under the substrate (9). A solder layer is disposed between the substrate (9) and the heat sink (4). The lower insulating shell (2) has a heat sink placement groove. A silicon carbide power chip (6) and a power terminal (11) are disposed on the substrate (9). A nano silver layer (7) and a ceramic layer (10) are disposed between the substrate (9), the silicon carbide power chip (6), and the power terminal (11). The silicon carbide power chip (6) is connected by a metal connecting wire (5).

2. The high-temperature resistant silicon carbide power module packaging structure according to claim 1, characterized in that: The nano-silver layer (7) is 25 μm thick. The silicon carbide power chip (6) is sintered together with the substrate (9) and the substrate (9) with the power terminal (11) through a sintering process.

3. The high-temperature resistant silicon carbide power module packaging structure according to claim 1, characterized in that: The heat sink (4) is directly welded to the substrate (9).

4. The high-temperature resistant silicon carbide power module packaging structure according to claim 1, characterized in that: The ceramic layer (10) is selected from a DBC substrate with silicon nitride.

5. The high-temperature resistant silicon carbide power module packaging structure according to claim 1, characterized in that: The upper insulating shell (1) and the lower insulating shell (2) are connected by locking screws (3).

6. The high-temperature resistant silicon carbide power module packaging structure according to claim 1, characterized in that: The substrate (9), silicon carbide power chip (6) and power terminal (11) are all disposed within epoxy resin.

7. The high-temperature resistant silicon carbide power module packaging structure according to claim 1, characterized in that: The metal connecting wire (5) is made of copper or aluminum.

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