Double-sided nickel-titanium-silver wafer evaporation system
By setting a hollowed-out nickel-titanium-silver plated area and a rotating mechanism on the planetary disk, the wafer can be automatically flipped, which solves the problems of cumbersome process and photolithography sputtering in the existing technology, and improves production efficiency and wafer quality.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- ANHUI ANXIN ELECTRONICS TECH
- Filing Date
- 2025-06-12
- Publication Date
- 2026-06-09
AI Technical Summary
The existing production process for double-sided nickel-titanium-silver wafers is cumbersome, has low production efficiency, and high raw material costs. Furthermore, the splashing of developer and etchant during the photolithography process leads to a decline in wafer quality and affects the yield rate.
A double-sided nickel-titanium-silver wafer evaporation system is adopted, including a planetary disk and a first cover plate. The planetary disk is set with hollowed-out nickel-titanium-silver plating areas. Combined with a rotation mechanism, the wafer is automatically flipped, eliminating the photoresist process step and directly plating on the front and back sides of the wafer.
It simplifies the operation process, improves production efficiency, reduces costs, enhances the yield and quality of wafers, and avoids the problem of developer and etchant splashing.
Smart Images

Figure CN224337688U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the technical field of semiconductor manufacturing, specifically to a double-sided nickel-titanium-silver wafer evaporation system. Background Technology
[0002] Wafer evaporation is a technique that deposits metal onto the surface of a wafer, playing a crucial role in semiconductor manufacturing. The basic principle of wafer evaporation is to improve the wafer's conductivity, corrosion resistance, and mechanical strength by forming a thin metal film on the wafer surface. Currently, wafer evaporation technology is widely used in semiconductor manufacturing, electronic product manufacturing, and other fields.
[0003] Double-sided nickel-titanium-silver wafers refer to wafers with nickel-titanium-silver metal layers deposited on both sides using a vapor deposition process. Double-sided nickel-titanium-silver wafers possess excellent electrical conductivity, outstanding shape memory, and superelasticity, while also exhibiting numerous superior properties such as biocompatibility, wear resistance, and corrosion resistance. Therefore, they are widely used in many cutting-edge fields such as aerospace, energy engineering, and biomedicine.
[0004] Currently, the surface metal evaporation process for double-sided nickel-titanium-silver wafers is typically:
[0005] Step 1: Front (P-side) Nickel-Titanium-Silver Plating: The front (P-side) of the wafer is exposed inside the vapor deposition machine, facing the inside of the machine cavity. The back (N-side) of the wafer is covered with a cover plate to prevent nickel-titanium-silver plating on the N-side. Step 2: Coating: After the front nickel-titanium-silver plating is completed, a layer of photoresist is coated on the surface of the nickel-titanium-silver layer. Step 3: Exposure: According to the actual working conditions, a photolithographic pattern is drawn on the photoresist. Step 4: Development: Remove the photoresist from the areas on the P-side that do not need nickel-titanium-silver plating. Step 5: Nickel-Titanium-Silver Removal: Use an etching solution to remove the nickel-titanium-silver metal in the areas where the photoresist was removed in Step 4. Step 6: Photoresist Removal: Remove all the photoresist from the surface of the P-side, completing the nickel-titanium-silver metal plating. Step 7: Back (N-side) Nickel-Titanium-Silver Plating: Remove the wafer, manually flip it, and put it back into the vapor deposition machine. The same method is used to plate a nickel-titanium-silver metal layer on the back of the wafer. During plating, the front (P-side) of the wafer is covered with a cover plate to prevent repeated plating on the P-side.
[0006] The aforementioned existing technologies have problems such as cumbersome operation procedures, long production process, low production efficiency, high raw material consumption costs, and the need for special treatment procedures for waste liquid. In particular, when using photolithography, the developer and etchant both have the problem of splashing, which can easily corrode the areas where nickel, titanium, and silver metals need to be retained, resulting in a decrease in wafer quality and affecting the wafer yield. Utility Model Content
[0007] (a) Technical problems to be solved
[0008] To address the shortcomings of existing technologies, this utility model provides a double-sided nickel-titanium-silver wafer evaporation system, which solves the problems of cumbersome operation procedures, long production processes, low production efficiency, high raw material consumption costs, and the need for special treatment of waste liquid in existing technologies. In particular, it solves the technical problem that when using photolithography, the developer and etchant both have the problem of splashing, which can easily corrode the areas where nickel-titanium-silver metal needs to be retained, leading to a decrease in wafer quality and affecting the wafer yield.
[0009] (II) Technical Solution
[0010] To achieve the above objectives, this utility model provides the following technical solution:
[0011] This utility model provides a double-sided nickel-titanium-silver wafer evaporation system, including a planetary disk and a first cover plate. The planetary disk is provided with a plating area, and the wafer is placed in the plating area. The first cover plate covers the front of the wafer and is located on the side of the planetary disk facing the inner cavity of the evaporation machine. The surface of the first cover plate is provided with a nickel-titanium-silver plating area, which is configured with a hollow structure. A rotating mechanism is provided in the plating area, and the wafer is connected to the rotating mechanism.
[0012] Preferably, the rotating mechanism includes a locking block disposed in the area to be plated. The locking block is symmetrically arranged along the diameter direction of the area to be plated and is rotatably connected to the inner wall of the area to be plated. The locking block has a slot, and the wafer is locked in the slot.
[0013] Preferably, the rotating mechanism further includes a rotating rod, one end of which is fixedly connected to the locking block, and the other end extends into the inner wall of the area to be plated and is rotatably connected to the inner wall of the area to be plated.
[0014] Preferably, the rotating mechanism further includes a locking part, which includes a square groove formed on the side wall of the locking block, a spring with one end fixedly connected to the inner wall of the square groove and extending and retracting along the length of the square groove, and a spherical block fixed to the other end of the spring and located in the square groove. The square groove is provided on the side of the locking block that contacts the inner wall of the area to be plated. An arc-shaped groove is formed on the inner wall of the area to be plated that slides and engages with the spherical block. A locking slot is provided on the arc-shaped groove that engages with the spherical block.
[0015] Preferably, the line connecting the two ends of the arc-shaped groove is 180°, and the bayonet is located in the middle and at both ends of the arc-shaped groove.
[0016] Furthermore, the first cover plate is a circular sheet structure with an annular groove on its curved surface. A magnetic ring is embedded in the annular groove, and a magnetic block is embedded in the side wall of the area to be plated. The magnetic block and the magnetic ring attract each other.
[0017] Preferably, the surface of the first cover plate has a groove, which is located at the edge of the first cover plate.
[0018] Furthermore, it also includes a second cover plate, and a pressing mechanism is provided on the planetary disk. The pressing mechanism includes a pressing plate and a fixing part connected to the planetary disk. One end of the pressing plate is rotatably connected to the fixing part, and the other end of the pressing plate presses against the surface of the second cover plate.
[0019] Preferably, the cross-section of the pressure plate is a zigzag shape, and the end away from the fixing part includes an abutting part, which is the lowest end of the pressure plate, and the abutting part abuts against the surface of the second cover plate.
[0020] Preferably, the fixing part includes a bolt that is rotatably fixed on the planetary disk, and the end of the pressure plate is fitted onto the bolt and rotatably connected to the bolt.
[0021] (III) Beneficial Effects
[0022] This invention provides a double-sided nickel-titanium-silver wafer evaporation system. Compared with the prior art, it has the following advantages:
[0023] 1. In this utility model, a first cover plate is added to the front of the wafer, and a hollowed-out nickel-titanium-silver plating area is reserved directly on the first cover plate. When the planetary disk is placed in the vapor deposition machine for plating, the nickel-titanium-silver metal can be plated on the wafer surface corresponding to the hollowed-out nickel-titanium-silver plating area. The area of the first cover plate that is not hollowed out will cover the wafer and will not be plated with nickel-titanium-silver metal.
[0024] 2. This utility model sets up a rotating mechanism in the planetary disk to be plated area. The wafer is connected to the rotating mechanism. After the front side of the wafer is plated, the back side of the wafer can be directly rotated to the side close to the inner cavity of the vapor deposition machine through the rotating mechanism. At this time, the first cover plate covers the back side of the wafer, and then nickel-titanium-silver is plated on the back side of the wafer through the nickel-titanium-silver plating area. The setting of the rotating mechanism avoids the tedious operation of manually picking up the wafer, flipping it over and re-clamping it to the to be plated area, saving manpower and improving the plating efficiency.
[0025] 3. This invention eliminates the traditional photoresist exposure, development, etching, and photoresist removal processes, directly improving the problem of poor nickel-titanium-silver plating in the wafer due to the splashing of developer and etchant during the photoresist process, thus affecting wafer quality. The yield rate of the produced wafers is significantly improved, and quality is guaranteed. This invention saves process steps, simplifies operation, reduces production processes, and significantly lowers production costs. Attached Figure Description
[0026] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0027] Figure 1 This is a schematic diagram of the planetary disk in the vapor deposition machine according to an embodiment of the present invention;
[0028] Figure 2 This is a top view of the concave surface (including the first cover plate) of the planetary disk in an embodiment of the present invention;
[0029] Figure 3 This is a cross-sectional structural diagram of the first cover plate in an embodiment of the present utility model;
[0030] Figure 4 This is a schematic cross-sectional view of the area to be plated on the planetary disk in an embodiment of this utility model;
[0031] Figure 5 This is a cross-sectional (top view) structural schematic diagram of the rotating mechanism in an embodiment of this utility model;
[0032] Figure 6 for Figure 5 Enlarged structural diagram at point A;
[0033] Figure 7 This is a top view of the convex surface (including the second cover plate) of the planetary disk in an embodiment of the present invention;
[0034] Figure 8 This is a cross-sectional schematic diagram of the pressing mechanism on the convex surface of the planetary disk in an embodiment of this utility model.
[0035] Among them, 1. Planetary disk; 11. Plating area; 111. Arc groove; 1111. Bayonet; 112. Magnetic block; 2. First cover plate; 21. Nickel-titanium-silver plating area; 22. Annular groove; 221. Magnetic ring; 23. Groove; 3. Second cover plate; 4. Rotating mechanism; 41. Locking block; 411. Locking groove; 42. Rotating rod; 43. Locking part; 431. Square groove; 432. Spring; 433. Spherical block; 5. Pressing mechanism; 51. Pressing plate; 511. Contact part; 52. Fixing part; 521. Bolt. Detailed Implementation
[0036] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions in the embodiments of this utility model are described clearly and completely. Obviously, the described embodiments are only some embodiments of this utility model, not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.
[0037] This application provides a double-sided nickel-titanium-silver wafer evaporation system, which solves the problems of cumbersome operation procedures, long production process, low production efficiency, high raw material consumption costs, and the need for special treatment of waste liquid in the prior art. In particular, it solves the technical problem that when using photolithography, the developer and etchant both have the problem of splashing, which can easily corrode the areas where nickel-titanium-silver metal needs to be retained, resulting in a decrease in wafer quality and affecting the wafer yield.
[0038] To better understand the above technical solutions, the following will provide a detailed explanation of the technical solutions in conjunction with the accompanying drawings and specific implementation methods.
[0039] Example:
[0040] like Figure 1 , Figure 2 , Figure 7 As shown, the double-sided nickel-titanium-silver wafer evaporation system includes a planetary disk 1, a first cover plate 2, and a second cover plate 3.
[0041] During the plating process, the planetary disk 1 is fixed inside the vapor deposition machine, and the inner cavity of the vapor deposition machine is coated with nickel-titanium-silver metal. The planetary disk 1 has a spherical structure, including a convex surface and a concave surface. The concave surface faces the inner cavity of the vapor deposition machine and is the side to be plated with nickel-titanium-silver. The surface of the planetary disk 1 is provided with a hollowed-out area 11 to be plated, and the wafer is rotatably connected to the area to be plated 11.
[0042] The first cover plate 2 is connected to the concave surface of the planetary disk 1. A nickel-titanium-silver plating area 21 is reserved on the first cover plate 2. The nickel-titanium-silver plating area 21 has a hollow structure, and the hollow pattern is designed and engraved according to the actual working conditions. During plating, the nickel-titanium-silver is plated on the wafer surface corresponding to the hollow pattern. The wafer area covered by the first cover plate 2 will not be plated with nickel-titanium-silver.
[0043] Combination Figure 3 , Figure 4As shown, the first cover plate 2 is a circular sheet structure with an annular groove 22 formed on its curved surface. The annular groove 22 surrounds the curved surface, and a magnetic ring 221 is embedded within the annular groove 22. The volume of the magnetic ring 221 is approximately the same as the volume of the annular groove 22 (with a connecting gap). Two magnetic blocks 112 are embedded in the inner wall of the area to be plated 11. These magnetic blocks 112 attract the magnetic ring 221, thus fixing the first cover plate 2 in place. Since the first cover plate 2 is located on the concave surface of the planetary disk 1, there is a risk of it falling off during plating. This design allows the first cover plate 2 to be adsorbed onto the planetary disk 1, thus better completing the plating operation.
[0044] A groove 23 is formed on the surface of the first cover plate 2. The groove 23 is located on the side of the first cover plate 2 away from the wafer, which facilitates the placement and removal of the first cover plate 2. The groove 23 is set at the edge of the first cover plate 2 and does not penetrate the first cover plate 2, so as not to affect the hollow pattern design of the nickel-titanium-silver plated area 21 on the surface of the first cover plate 2.
[0045] Combination Figure 5 , Figure 6 As shown, a rotating mechanism 4 is provided in the plating area 11. The rotating mechanism 4 includes a locking block 41, a rotating rod 42, and a locking part 43.
[0046] The card block 41 is rotatably connected to the side wall of the plated area 11 via the rotating rod 42. There are two card blocks 41, which are symmetrically arranged along the diameter of the plated area 11. The card block 41 has a card slot 411. The wafer is vertically inserted into the card slot 411 and then horizontally connected to the plated area 11 by rotation.
[0047] One end of the rotating rod 42 extends into the interior of the area to be plated 11 and is rotatably connected to the inner wall of the area to be plated 11, while the other end is fixed to the locking block 41.
[0048] The locking part 43 includes a square groove 431, a spring 432, and a spherical block 433. The square groove 431 is formed on the side wall of the locking block 41 near the plating area 11. One end of the spring 432 is fixedly connected to the bottom of the square groove 431, and the other end is fixed to the spherical block 433. The spring 432 is telescopically oriented along the opening direction of the square groove 431. One end of the spherical block 433 is spherical, and the other end is square, with the square end fixed to the spring 432.
[0049] An arc-shaped groove 111 is formed on the inner wall of the area to be coated 11. The two ends of the arc-shaped groove 111 are connected at 180°. A bayonet 1111 is provided in the middle and at both ends of the arc-shaped groove 111. The bayonet 1111 has a circular structure. The spherical block 433 slides along the arc-shaped groove 111 when the clamping block 41 rotates, and is located in the bayonet 1111 in the middle of the arc-shaped groove 111 when the wafer is vertically clamped. The clamping block 41 can rotate 90° clockwise or counterclockwise respectively so that the two sides of the wafer face the inner cavity of the vapor deposition machine to complete the double-sided coating of the wafer.
[0050] The second cover plate 3 is a circular sheet structure connected to the raised surface of the planetary disk 1. A raised part is fixed at the center of the surface of the second cover plate 3 to facilitate the removal and placement of the second cover plate 3.
[0051] Combination Figure 8 As shown, a clamping mechanism 5 is provided on the planetary disk 1. The clamping mechanism 5 is located on the raised surface of the planetary disk 1 and includes a clamping plate 51 and a fixing part 52.
[0052] The fixing part 52 includes a bolt 521, the bottom of which is fixedly connected to the planetary disk 1.
[0053] The pressure plate 51 is a strip-shaped structure with a broken-line cross-section, resembling a "W". One end of the pressure plate 51 has an opening and is fitted onto the bolt 521, rotatably connected to it. The other end of the pressure plate 51 includes an abutment portion 511, which is the lowest point of the broken-line shape of the pressure plate 51 and abuts against the surface of the second cover plate 3. When the second cover plate 3 needs to be removed or placed, the pressure plate 51 is rotated to one side. After the second cover plate 3 is engaged in the second engagement area, the pressure plate 51 is rotated until the abutment portion 511 abuts against the second cover plate 3. This design of the pressure plate 51 effectively applies force to the surface of the second cover plate 3, thereby fixing the second cover plate 3 within the second engagement area and preventing it from falling off.
[0054] In summary, compared with existing technologies, it has the following beneficial effects:
[0055] 1. In this utility model, a first cover plate is added to the front of the wafer, and a hollowed-out nickel-titanium-silver plating area is reserved directly on the first cover plate. When the planetary disk is placed in the vapor deposition machine for plating, the nickel-titanium-silver metal can be plated on the wafer surface corresponding to the hollowed-out nickel-titanium-silver plating area. The area of the first cover plate that is not hollowed out will cover the wafer and will not be plated with nickel-titanium-silver metal.
[0056] 2. This utility model sets up a rotating mechanism in the planetary disk to be plated area. The wafer is connected to the rotating mechanism. After the front side of the wafer is plated, the back side of the wafer can be directly rotated to the side close to the inner cavity of the vapor deposition machine through the rotating mechanism. At this time, the first cover plate covers the back side of the wafer, and then nickel-titanium-silver is plated on the back side of the wafer through the nickel-titanium-silver plating area. The setting of the rotating mechanism avoids the tedious operation of manually picking up the wafer, flipping it over and re-clamping it to the to be plated area, saving manpower and improving the plating efficiency.
[0057] 3. This invention eliminates the traditional photoresist exposure, development, etching, and photoresist removal processes, directly improving the problem of poor nickel-titanium-silver plating in the wafer due to the splashing of developer and etchant during the photoresist process, thus affecting wafer quality. The yield rate of the produced wafers is significantly improved, and quality is guaranteed. This invention saves process steps, simplifies operation, reduces production processes, and significantly lowers production costs.
[0058] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.
[0059] The above embodiments are only used to illustrate the technical solutions of this utility model, and are not intended to limit it. Although this utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this utility model.
Claims
1. A double-sided nickel-titanium-silver wafer evaporation system, characterized in that, The device includes a planetary disk and a first cover plate. The planetary disk has a plating area, and the wafer is placed in the plating area. The first cover plate covers the front of the wafer and is located on the side of the planetary disk facing the inner cavity of the vapor deposition machine. The surface of the first cover plate has a nickel-titanium-silver plating area, which is configured with a hollow structure. A rotating mechanism is provided in the plating area, and the wafer is connected to the rotating mechanism.
2. The double-sided nickel-titanium-silver wafer evaporation system as described in claim 1, characterized in that, The rotating mechanism includes a locking block disposed in the area to be plated. The locking block is symmetrically arranged along the diameter direction of the area to be plated and is rotatably connected to the inner wall of the area to be plated. The locking block has a slot, and the wafer is locked in the slot.
3. The double-sided nickel-titanium-silver wafer evaporation system as described in claim 2, characterized in that, The rotating mechanism also includes a rotating rod, one end of which is fixedly connected to the locking block, and the other end extends into the inner wall of the area to be plated and is rotatably connected to the inner wall of the area to be plated.
4. The double-sided nickel-titanium-silver wafer evaporation system as described in claim 2, characterized in that, The rotating mechanism further includes a locking part, which includes a square groove on the side wall of the locking block, a spring with one end fixedly connected to the inner wall of the square groove and extending and retracting along the length of the square groove, and a spherical block fixed to the other end of the spring and located in the square groove. The square groove is located on the side of the locking block that contacts the inner wall of the area to be plated. An arc-shaped groove is provided on the inner wall of the area to be plated to slide and cooperate with the spherical block. A locking slot is provided on the arc-shaped groove to engage with the spherical block.
5. The double-sided nickel-titanium-silver wafer evaporation system as described in claim 4, characterized in that, The two ends of the arc-shaped groove are connected at 180°, and the bayonet is located in the middle and at both ends of the arc-shaped groove.
6. The double-sided nickel-titanium-silver wafer evaporation system as described in claim 1, characterized in that, The first cover plate is a circular sheet structure with an annular groove on its curved surface. A magnetic ring is embedded in the annular groove, and a magnetic block is embedded in the side wall of the area to be plated. The magnetic block and the magnetic ring attract each other.
7. The double-sided nickel-titanium-silver wafer evaporation system as described in claim 1, characterized in that, The first cover plate has a groove on its surface, and the groove is located at the edge of the first cover plate.
8. The double-sided nickel-titanium-silver wafer evaporation system as described in claim 1, characterized in that, It also includes a second cover plate, and a pressing mechanism is provided on the planetary disk. The pressing mechanism includes a pressing plate and a fixing part connected to the planetary disk. One end of the pressing plate is rotatably connected to the fixing part, and the other end of the pressing plate presses on the surface of the second cover plate.
9. The double-sided nickel-titanium-silver wafer evaporation system as described in claim 8, characterized in that, The cross-section of the pressure plate is a broken line shape, and the end away from the fixing part includes an abutting part, which is the lowest end of the pressure plate and abuts against the surface of the second cover plate.
10. The double-sided nickel-titanium-silver wafer evaporation system as described in claim 8, characterized in that, The fixing part includes a bolt that is rotatably fixed on the planetary disk, and the end of the pressure plate is fitted with a hole on the bolt and rotatably connected to the bolt.