Ring assembly and epitaxial growth apparatus

Abstract

This utility model discloses a ring assembly and an epitaxial growth apparatus. The ring assembly, used in the epitaxial growth apparatus, includes: a ring body; multiple first isolation grooves disposed on the top surface of the ring body, extending outward from the inner edge of the ring body; and multiple second isolation grooves disposed on the top surface of the ring body, extending inward from the outer edge of the ring body. The extending directions of the first and second isolation grooves are at a certain angle to the radial direction of the ring body. The first and second isolation grooves are spaced apart, and adjacent first and second isolation grooves overlap in their circumferential projection. This utility model divides the ring body into multiple stress regions along the circumference, effectively preventing deformation of the ring body due to circumferential stress superposition. The directions of the first and second isolation grooves match the airflow direction above the ring assembly, ensuring that the ring body remains unchanged after multiple epitaxial growth cycles. This helps maintain a uniform distribution of process airflow above the ring assembly and optimizes the epitaxial process effect.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor technology, and in particular to a ring component and epitaxial growth equipment. Background Technology

[0002] Epitaxial growth equipment is used to generate epitaxial films, such as SiC films, on the surface of a substrate. The reaction chamber of the equipment contains a base, with the substrate held centrally above the base, and an outer cover ring surrounding the substrate. The outer cover ring is typically made of graphite. After a certain epitaxial film growth cycle, a thick layer of SiC material accumulates on the outer cover ring. Due to the significant difference in thermal expansion coefficients between graphite and SiC, large stresses are generated between the graphite and SiC during frequent temperature increases and decreases in the reaction chamber. This causes the outer cover ring to twist and deform, resulting in drastic changes in the airflow distribution around the substrate and a decrease in the uniformity of film growth parameters (thickness, doping concentration, etc.) on the substrate surface.

[0003] To address the problem of excessive stress between graphite and SiC causing deformation of the outer cover ring, existing technologies employ multiple radially arranged isolation grooves on the surface of the outer cover ring to prevent the accumulation of deformation tendencies and thus suppress deformation.

[0004] However, in actual use, the aforementioned radial isolation grooves are refilled by SiC material after a few growth cycles, causing the outer cover ring to twist and deform again due to excessive stress between graphite and SiC.

[0005] The statements herein provide only background information relating to this invention and do not necessarily constitute prior art. Utility Model Content

[0006] The purpose of this invention is to provide a ring assembly and epitaxial growth equipment that can ensure that the outer cover ring will not be twisted or deformed during long-term use, thereby improving the long-term stability of the epitaxial growth process and the uniformity of the epitaxial layer generated on the substrate surface.

[0007] To achieve the above objectives, this utility model proposes a ring assembly for use in epitaxial growth equipment, comprising:

[0008] Ring body;

[0009] Multiple first isolation grooves are provided on the top surface of the ring body and extend outward from the inner edge of the ring body;

[0010] Multiple second isolation grooves are provided on the top surface of the ring body and extend inward from the outer edge of the ring body;

[0011] The first and second isolation grooves extend at a certain angle to the radial direction of the ring body. The first and second isolation grooves are distributed at intervals, and adjacent first and second isolation grooves overlap in the circumferential projection.

[0012] Optionally, at least a portion of the first isolation groove and the second isolation groove completely overlap in the circumferential projection.

[0013] Optionally, the first isolation groove and the second isolation groove are evenly distributed on the top surface of the ring body.

[0014] Optionally, the first isolation groove and the second isolation groove are arc-shaped grooves, straight grooves, or polygonal grooves.

[0015] Optionally, the angle between the extending directions of the first and second isolation grooves and the radial direction of the ring body ranges from 10° to 30°.

[0016] Optionally, the width of the end of the first isolation groove and / or the second isolation groove near the inner edge of the ring body is greater than the width of the end near the outer edge of the ring body.

[0017] Optionally, the depth of the end of the first isolation groove and / or the second isolation groove near the inner edge of the ring body is greater than the depth of the end near the outer edge of the ring body.

[0018] Optionally, the ring assembly further includes a third isolation groove disposed on the top surface of the ring body and extending circumferentially along the ring body.

[0019] Optionally, the third isolation groove is an annular groove concentric with the ring body.

[0020] Optionally, the third isolation groove includes at least two arc-shaped grooves concentric with the ring body, and any two adjacent arc-shaped grooves have an overlapping area in radial projection.

[0021] Optionally, the ring assembly is an outer cover ring or a support ring in the epitaxial growth apparatus.

[0022] This utility model also proposes an epitaxial growth apparatus, comprising:

[0023] reaction chamber;

[0024] A gas spray head is disposed inside the reaction chamber and is used to supply process gas into the reaction chamber;

[0025] A base assembly, disposed within the reaction chamber and opposite to the gas spray head, is used to support the substrate and drive the substrate and process gas to rotate; the base assembly includes:

[0026] Base;

[0027] An outer cover ring is located above the base, and at least a portion of the outer cover ring covers the outer peripheral edge of the base. The outer cover ring adopts the structure of the ring assembly described above.

[0028] In the radial direction from the inside to the outside of the outer cover ring, the direction of the first isolation groove and the second isolation groove on the outer cover ring is clockwise or counterclockwise, and the first isolation groove and the second isolation groove on the outer cover ring are matched with the airflow direction of the process gas.

[0029] Optionally, the base assembly further includes a support ring disposed above the base for supporting the substrate;

[0030] The support ring is located inside the outer cover ring, and the support ring also adopts the structure of the ring assembly described above; in the radial direction from the inside to the outside of the support ring, the direction of the first isolation groove and the second isolation groove on the support ring is clockwise or counterclockwise with the rotation direction of the support ring, and the first isolation groove and the second isolation groove on the support ring are also matched with the airflow direction of the process gas.

[0031] Compared with the prior art, the ring assembly and epitaxial growth equipment of this utility model have the following advantages and

[0032] Beneficial effects:

[0033] This solution involves setting a first isolation groove and a second isolation groove on the top surface of the outer cover ring, extending from the inner edge to the outer edge and from the outer edge to the inner edge of the outer cover ring, respectively. The circumferential projections of the first and second isolation grooves overlap, thereby dividing the outer cover ring circumferentially into multiple stress regions. This effectively prevents deformation of the outer cover ring due to the superposition of circumferential stress. The directions of the first and second isolation grooves are clockwise or counterclockwise, the same as the rotation direction of the outer cover ring, and the directions of the first and second isolation grooves match the direction of the process gas flow above the outer cover ring. This allows the process gas entering the isolation groove to flow out of the isolation groove at the fastest speed, minimizing the deposition within the isolation groove. This ensures that the isolation groove remains effective even after multiple epitaxial growth cycles, stably separating multiple stress regions and preventing long-term deformation of the outer cover ring. This, in turn, helps maintain uniform process gas flow distribution and optimizes the epitaxial process effect.

[0034] The ring assembly structure in this design can also be used as a support ring, ensuring that the support ring will not deform due to excessive stress after multiple epitaxial growth cycles. This helps maintain a uniform distribution of process airflow above it, thereby optimizing the epitaxial process effect.

[0035] This solution effectively prevents excessive deposition in the inner isolation groove due to the larger gas volume inside it by setting the depth and width of the isolation groove near the inner edge of the ring body to be greater than that near the outer edge of the ring body. Attached Figure Description

[0036] Figure 1 This is a schematic diagram of an epitaxial growth device according to the present invention;

[0037] Figure 2 A top view of a base assembly in the prior art;

[0038] Figure 3 This is a schematic diagram of turbulence at the isolation channel in existing technology;

[0039] Figure 4 This is a top view of a base assembly according to the present invention;

[0040] Figure 5 This is a partial schematic diagram of an outer covering ring according to the present invention;

[0041] Figure 6 This is a top view of another base component of this utility model;

[0042] Figure 7 This is a partial schematic diagram of another outer covering ring of this utility model.

[0043] Figure label:

[0044] 100: Reaction Chamber

[0045] 101: Sidewall

[0046] 102: Reaction Zone

[0047] 103: Gas spray head

[0048] 104: Support ring

[0049] 105: Base

[0050] 106: Rotating Cylinder

[0051] 107: Heater

[0052] 108, 108': Outer Covering Ring

[0053] 109, 202: Isolation tank

[0054] 203, 206: Stress areas

[0055] 204: First Isolation Tank

[0056] 205: Second isolation trench

[0057] 207: Third Isolation Tank Detailed Implementation

[0058] The ring assembly and epitaxial growth apparatus proposed in this utility model will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of this utility model will become clearer from the following description. It should be noted that the drawings are in a very simplified form and use non-precise proportions, only for the purpose of conveniently and clearly illustrating the embodiments of this utility model. Please refer to the drawings to make the objectives, features, and advantages of this utility model more apparent and understandable. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for the purpose of assisting those skilled in the art in understanding and reading the content disclosed in the specification, and are not intended to limit the implementation conditions of this utility model. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in the proportional relationships, or adjustments to the size, without affecting the effects and objectives that this utility model can produce, should still fall within the scope of the technical content disclosed in this utility model.

[0059] like Figure 1 The diagram shows a schematic of an epitaxial growth apparatus according to the present invention. The apparatus includes a reaction chamber 100 for processing one or more substrates W, depositing growth material on the surface of the substrate W to form an epitaxial layer. The reaction chamber 100 has a generally cylindrical sidewall 101 that encloses a reaction region 102. A gas spray head 103 and a base assembly opposite to the gas spray head 103 are also disposed within the reaction chamber 100. The gas spray head 103 is used to deliver process gas to the reaction region 102. The base assembly, used to support the substrate W, includes a base 105, a support ring 104, and a rotating cylinder 106. The support ring 104 is located above the base 105 and is used to support the substrate W; the rotating cylinder 106 is located below the base 105 and is used to drive the base 105 to rotate. When the rotating cylinder 106 rotates around its central axis, the base 105 and the support ring 104 rotate accordingly, causing the substrate W to rotate. At the same time, the process gas above the substrate W also rotates, forming a vortex-like airflow. A heater 107 is also provided below the base 105, which is used to heat the substrate W to the process temperature.

[0060] The base assembly also includes an outer cover ring 108 located around the support ring 104. This outer cover ring 108 is also disposed on the rotating cylinder 106 and rotates with it. At least a portion of the outer cover ring 108 covers the outer peripheral edge of the base 105 to prevent the upper surface of the base 105 from pulverizing at high temperatures, forming impurities that contaminate the process gases. The support ring 104 and the outer cover ring 108 can also be used to regulate the temperature distribution and airflow distribution around the substrate W.

[0061] The material of the outer cover ring 108 is usually different from that of the epitaxial layer, and their coefficients of thermal expansion are also different. In this embodiment, the outer cover ring 108 is made of graphite, and the epitaxial layer is a SiC film.

[0062] During the deposition of the epitaxial layer on the substrate W, process gases are also present on the upper surface of the outer cover ring 108, which will also deposit a SiC film. However, since the thermal expansion coefficients of the SiC film and the outer cover ring 108 are significantly different, when the temperature of the base assembly changes, the upper surface of the outer cover ring 108 will generate large stress, causing the outer cover ring 108 to twist and deform. The deformed outer cover ring 108 will affect the airflow distribution above the outer cover ring 108, thereby affecting the uniformity of the epitaxial layer deposited on the substrate W.

[0063] like Figure 2 As shown, an outer cover ring 108' of the prior art has multiple radially arranged isolation grooves 109 on its upper surface. These isolation grooves 109 extend radially along the outer cover ring 108', dividing it into multiple fan-shaped ring regions. Adjacent fan-shaped ring regions are separated by the isolation grooves 109, thus preventing stress superposition and avoiding excessive stress accumulation on the outer cover ring 108', which could lead to deformation. However, in practical applications, because the substrate W and the outer cover ring 108' need to rotate at high speed (500 rpm-800 rpm) during epitaxial layer growth, the process gas in the reaction region 102 is driven to rotate by the high-speed rotating substrate W and the outer cover ring 108', generating a vortex-like airflow distribution, such as... Figure 3 As shown, when this vortex-shaped airflow obliquely passes over the isolation groove 109, it has a large circumferential airflow component, thus forming turbulence on the isolation groove 109. This turbulence causes the flow velocity of the process gas at the isolation groove 109 to decrease significantly, resulting in the rapid formation of deposits in the isolation groove 109. After a few epitaxial growth cycles, the isolation groove 109 will be filled with deposits and lose its effect of separating the fan-ring area. The outer cover ring 108' will then face the problem of stress superposition leading to excessive stress and distortion.

[0064] To address the problem of easy failure of the isolation groove leading to deformation of the outer cover ring, this embodiment proposes an outer cover ring 108, such as... Figure 4 and Figure 5 As shown, the top surface of the outer cover ring 108 in this embodiment is provided with a plurality of isolation grooves 202. Figure 4 and Figure 5Only a portion of the isolation groove 202 is shown. This isolation groove 202 penetrates the top surface of the outer cover ring 108, and in the radial direction from the inside to the outside of the outer cover ring 108, the direction of the isolation groove 202 is the same as the rotation direction of the outer cover ring 108, either clockwise or counterclockwise. In this embodiment, both are clockwise. There is an angle α between the direction of the isolation groove 202 and the radial direction of the outer cover ring 108, so that the direction of the isolation groove 202 is the same as the airflow direction above the outer cover ring 108. Therefore, when the process gas passes over the upper surface of the outer cover ring 108, the process gas can flow out quickly along the direction of the isolation groove 202 without colliding with the groove wall of the isolation groove 202 and forming turbulence. This minimizes the amount of deposits in the isolation groove 202 and prevents the isolation groove 202 from being filled with deposits and failing to the greatest extent.

[0065] Multiple isolation grooves 202 divide the outer cover ring 108 into multiple relatively independent stress regions 203 along its circumference. During the epitaxial growth process, SiC material is deposited on the upper surface of each stress region 203. When the temperature of the base assembly changes, stress still occurs between the deposited SiC material and the outer cover ring 108. However, due to the presence of the isolation grooves 202, the stress on different stress regions 203 does not accumulate but is instead dissipated by the isolation grooves 202. Therefore, the outer cover ring 108 will not twist or deform due to the increased stress accumulation. Furthermore, because the deposition amount within the isolation grooves 202 is minimized, it retains the groove shape even after long-term use, effectively separating different stress regions 203. Therefore, the outer cover ring 108 in this embodiment helps maintain the long-term stability of the airflow distribution, thereby contributing to the long-term stability of the process effect.

[0066] Furthermore, multiple isolation grooves 202 are evenly distributed at equal intervals on the top surface of the outer cover ring 108 to evenly divide the top surface of the outer cover ring 108 into multiple identical stress regions 203. Each stress region 203 bears the same stress, thereby avoiding excessive stress in a certain stress region 203 that could cause severe deformation of the adjacent isolation groove 202.

[0067] In this embodiment, the isolation groove 202 is an arc-shaped groove, meaning its cross-section is arc-shaped. Since the direction of the process airflow above the outer cover ring 108 is arc-shaped, making the isolation groove 202 arc-shaped maximizes its alignment with the airflow direction, maximizing the flow velocity of the airflow within the isolation groove 202 and preventing collisions with the wall of the isolation groove 202. This minimizes the amount of process gas deposited within the isolation groove 202. Because the isolation groove 202 is arc-shaped, the angle α between the direction of the isolation groove 202 and the radial direction of the outer cover ring 108 can be the same or different. In this embodiment, the angle α is within the range of 10° to 30°. In some embodiments, the angle α gradually increases in the radial direction from the inside to the outside.

[0068] In another embodiment, the isolation groove 202 can also be a straight groove with an angle between it and the radial direction of the outer cover ring 108, which has the advantage of easy processing. The angle α between the direction of the straight groove and the radial direction of the outer cover ring 108 is also in the range of 10° to 30°.

[0069] In further embodiments, the isolation groove 202 can also be a zigzag groove with an angle between it and the radial direction of the outer cover ring 108, formed by connecting multiple straight groove segments. This type of groove is relatively simple to manufacture, and compared to straight grooves, it better matches the airflow direction, reducing the amount of sediment within the isolation groove 202. The angle α between each straight segment of the zigzag groove and the radial direction of the outer cover ring 108 is within the range of 10° to 30°. The angle α between each straight groove segment of the zigzag groove and the radial direction of the outer cover ring 108 can be the same or different. In some embodiments, the angle α gradually increases in the radial direction from the inside to the outside.

[0070] For the same reaction chamber 100, the rotation speed of the base 105 and the outer cover ring 108 can be adjusted as needed when performing different epitaxial growth processes or at different stages of the same epitaxial growth process. Therefore, the airflow direction above the outer cover ring 108 also has different angles. At this time, parameters such as process speed and process time can be comprehensively considered to select the direction of the isolation groove 202, that is, to select different included angles α, so that the average flow velocity of the airflow in the isolation groove 202 reaches the maximum during the entire process. Taking a base 105 with a rotational speed of 500 rpm to 800 rpm as an example, the direction of the isolation groove 202 can be the same as the airflow direction at 500 rpm, so that the airflow speed in the isolation groove 202 at 500 rpm reaches the fastest and has the best effect. At this time, although the airflow speed in the isolation groove 202 at other speeds is relatively slow, its speed is still faster than that of the radial isolation groove because the direction of the isolation groove 202 matches the airflow direction. Similarly, the direction of the isolation groove 202 can also be the same as the airflow direction at 800 rpm, so that the airflow speed in the isolation groove 202 at 800 rpm reaches the fastest. Alternatively, the direction of the isolation groove 202 can also be the same as the airflow direction at 600 rpm or 700 rpm, so that the average flow velocity of the airflow in the isolation groove 202 reaches the maximum, and the amount of sediment in the isolation groove 202 is minimized.

[0071] In more embodiments, the depth of the isolation groove 202 at the inner edge of the outer cover ring 108 is greater than the depth at the outer edge of the outer cover ring 108. After the process gas is sprayed out by the gas spray head 103, due to the influence of the pressure difference, the process gas gradually diffuses from the central region to the edge region of the reaction zone 102. As a result, the amount of process gas above the inner side of the outer cover ring 108 is greater than the amount of process gas above the outer side. Correspondingly, the amount of process gas entering the inner isolation groove 202 is also greater than the amount entering the outer isolation groove 202, and the deposition amount in the inner isolation groove 202 is inevitably greater than the deposition amount in the outer isolation groove 202. To prevent the deposition rate in the inner isolation groove 202 from being too fast, the depth of the isolation groove 202 at the inner edge of the outer cover ring 108 is set to be greater than the depth at the outer edge of the outer cover ring 108. In another embodiment, the width of the isolation groove 202 at the inner edge of the outer cover ring 108 can be set to be greater than the width at the outer edge of the outer cover ring 108, so as to avoid the deposition rate of the inner isolation groove 202 being too fast.

[0072] In more embodiments, such as Figure 6 As shown, the top surface of the outer cover ring 108 is also provided with at least one third isolation groove 207, extending circumferentially along the outer cover ring 108. In this embodiment, the third isolation groove 207 is an annular groove, concentric with the outer cover ring 108, and intersects with the isolation groove 202. The third isolation groove 207 divides the outer cover ring 108 into at least two annular regions along the radial direction. Since the outer cover ring 108 also has stress in the radial direction, dividing the outer cover ring 108 radially can prevent the stress in the radial direction of the outer cover ring 108 from increasing and causing the outer cover ring 108 to twist and deform. In another embodiment, the third isolation groove 207 includes at least two arc-shaped grooves concentric with the outer cover ring 108. Different arc-shaped grooves may have different radii, and any two adjacent arc-shaped grooves have an overlapping area in the radial projection, thereby serving to divide the outer cover ring 108 radially into at least two annular regions to prevent the stress in the radial direction of the outer cover ring 108 from increasing and causing the outer cover ring 108 to twist and deform.

[0073] In another embodiment, the difference from the above embodiment lies in the structure of the outer covering ring 108, such as... Figure 7As shown, the top surface of the outer cover ring 108 in this embodiment is provided with a plurality of first isolation grooves 204 and a plurality of second isolation grooves 205. The first isolation grooves 204 and the second isolation grooves 205 are distributed at intervals. The first isolation grooves 204 extend outward from the inner edge of the outer cover ring 108, and the second isolation grooves 205 extend inward from the outer edge of the outer cover ring 108. Adjacent first isolation grooves 204 and second isolation grooves 205 have overlapping areas in the circumferential projection, dividing the outer cover ring 108 into a plurality of stress regions 206 along the circumference. The area between any two adjacent first isolation grooves 204 and second isolation grooves 205 is a stress region 206. After the outer cover ring 108 is divided into a plurality of relatively independent stress regions 206, when epitaxial material is deposited on the upper surface of the stress region 206 and stress is generated, the stress of adjacent stress regions 206 will not be superimposed, thereby preventing the outer cover ring 108 from being subjected to excessive stress and twisting deformation.

[0074] In the radial direction from the inside to the outside of the outer cover ring 108, the directions of the first isolation groove 204 and the second isolation groove 205 are the same as the rotation direction of the outer cover ring 108, both clockwise or both counterclockwise. The extension directions of the first isolation groove 204 and the second isolation groove 205 are at a certain angle to the radial direction of the outer cover ring 108, so that the directions of the first isolation groove 204 and the second isolation groove 205 match the flow direction of the process gas above the outer cover ring 108. When the gas flows through the first isolation groove 204 and the second isolation groove 205, it can flow through them at the fastest speed without colliding with the sidewalls of the grooves and forming turbulence. This minimizes the amount of sediment in the first isolation groove 204 and the second isolation groove 205, allowing them to maintain their groove shape for a long time. This maintains multiple independent stress areas 206, preventing the outer cover ring 108 from deforming after repeated use and affecting the airflow distribution, thus optimizing the process effect. In this embodiment, the radial angles between the first isolation groove 204 and the outer cover ring 108, and between the second isolation groove 205 and the outer cover ring 108, are both within the range of 10° to 30°. The radial angles between the first isolation groove 204 and the outer cover ring 108 at different locations can be the same or different. Similarly, the radial angles between the second isolation groove 205 and the outer cover ring 108 at different locations can be the same or different. Furthermore, the radial angles between the first isolation groove 204 and the outer cover ring 108 can be the same or different from the radial angles between the second isolation groove 205 and the outer cover ring 108.

[0075] Furthermore, the first isolation groove 204 and the second isolation groove 205 are evenly distributed on the top surface of the outer cover ring 108, dividing the outer cover ring 108 into multiple stress regions 206, so that each stress region 206 bears the same stress, thereby avoiding excessive stress on a certain stress region 206, which would cause severe deformation of its adjacent first isolation groove 204 or second isolation groove 205.

[0076] In this embodiment, the first isolation groove 204 extends outward from the inner edge of the outer cover ring 108 beyond the radial midpoint of the outer cover ring 108, and the second isolation groove 205 extends inward from the outer edge of the outer cover ring 108 beyond the radial midpoint of the outer cover ring 108. Therefore, the overlapping area of ​​the first isolation groove 204 and the second isolation groove 205 projected circumferentially is the middle region of the outer cover ring 108. In other embodiments, the overlapping area of ​​the first isolation groove 204 and the second isolation groove 205 projected circumferentially may also be in other regions of the outer cover ring 108, dividing the top surface of the outer cover ring 108 into multiple stress regions 206.

[0077] In further embodiments, portions of the first isolation groove 204 and the second isolation groove 205 may completely overlap in the circumferential projection. That is, a portion of the first isolation groove 204 extends outward from the inner edge of the outer cover ring 108 to the outer edge of the outer cover ring 108, and the adjacent second isolation groove 205 also extends inward from the outer edge of the outer cover ring 108 to the inner edge of the outer cover ring 108. When all the first isolation grooves 204 and all the second isolation grooves 205 completely overlap in the circumferential projection, the first isolation groove 204 and the second isolation groove 205 constitute the isolation groove 202 in the above embodiments.

[0078] Similar to the above embodiments, the first isolation groove 204 and the second isolation groove 205 in this embodiment can also be arc-shaped grooves, straight grooves, or zigzag grooves, and the included angle between each type of groove and the radial direction of the outer cover ring 108 is within the range of 10° to 30°. The depth and / or width of the end of the first isolation groove 204 and / or the second isolation groove 205 near the inner edge of the outer cover ring 108 is greater than the depth and / or width of the end near the outer edge of the outer cover ring 108. In addition, the top surface of the outer cover ring 108 in this embodiment can also be provided with a third isolation groove 207, which will not be described in detail here.

[0079] Continue as Figure 1 As shown, this embodiment also discloses a support ring 104, the top surface of which is also provided with an isolation groove, and the isolation groove on the top surface of the support ring 104 is also matched with the airflow direction of the process gas. The isolation groove on the top surface of the support ring 104 has the same structure as the isolation groove 202 or the first isolation groove 204 and the second isolation groove 205 in the above embodiment, thereby dividing the top surface of the support ring 104 into multiple stress regions.

[0080] Since the top surface of the support ring 104 is also covered with process gases, a SiC film will be deposited during the epitaxial growth process. Due to the material difference between the deposited SiC film and the support ring 104, stress will occur. To avoid stress superposition on the support ring 104 leading to excessive stress and distortion, an isolation groove is used to divide the top surface of the support ring 104 into multiple stress regions. This effectively prevents stress superposition in different stress regions. The isolation groove is located radially from the inside to the outside of the support ring, in the same direction as the rotation of the support ring, and the direction of the process gas flow is matched. This allows the gas to flow quickly through the isolation groove, reducing the amount of deposition within it. This helps maintain the separation of stress regions on the support ring 104 over a long period, preventing stress superposition, improving the stability of the gas flow distribution, and optimizing the process effect.

[0081] In more embodiments, for ring component structures that are prone to film deposition and stress generation and have airflow distributed above them, isolation grooves 202 or first isolation grooves 204 and second isolation grooves 205 as described above can be provided on the top surface of the ring body to avoid stress superposition, match the isolation groove with the airflow direction, minimize the amount of deposition in the isolation groove, and maintain the long-term effectiveness of the isolation groove.

[0082] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0083] In the description of this utility model, it should be understood that the terms "center," "height," "thickness," "upper," "lower," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," and "circumferential," etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings and are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model. In the description of this utility model, unless otherwise stated, "a plurality of" means two or more.

[0084] In the description of this utility model, unless otherwise explicitly specified and limited, the terms "installation," "connection," "joining," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.

[0085] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0086] Although the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above content. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A ring assembly used in an epitaxial growth apparatus, characterized in that, include: Ring body; Multiple first isolation grooves are provided on the top surface of the ring body and extend outward from the inner edge of the ring body; Multiple second isolation grooves are provided on the top surface of the ring body and extend inward from the outer edge of the ring body; The first and second isolation grooves extend at a certain angle to the radial direction of the ring body. The first and second isolation grooves are distributed at intervals, and adjacent first and second isolation grooves overlap in the circumferential projection.

2. The ring assembly as described in claim 1, characterized in that, At least a portion of the first isolation groove and the second isolation groove completely overlap in the circumferential projection.

3. The ring assembly as described in claim 1, characterized in that, The first and second isolation grooves are evenly distributed on the top surface of the ring body.

4. The ring assembly as claimed in claim 1, characterized in that, The first isolation groove and the second isolation groove are arc-shaped grooves, straight grooves, or broken-line grooves.

5. The ring assembly as claimed in claim 1, characterized in that, The angle between the extending directions of the first and second isolation grooves and the radial direction of the ring body ranges from 10° to 30°.

6. The ring assembly as claimed in claim 1, characterized in that, The width of the end of the first isolation groove and / or the second isolation groove near the inner edge of the ring body is greater than the width of the end near the outer edge of the ring body.

7. The ring assembly as claimed in claim 1, characterized in that, The depth of the first isolation groove and / or the second isolation groove near the inner edge of the ring body is greater than the depth of the end near the outer edge of the ring body.

8. The ring assembly as claimed in claim 1, characterized in that, The ring assembly also includes a third isolation groove, which is disposed on the top surface of the ring body and extends circumferentially along the ring body.

9. The ring assembly as claimed in claim 8, characterized in that, The third isolation groove is an annular groove concentric with the ring body.

10. The ring assembly as claimed in claim 8, characterized in that, The third isolation groove includes at least two arc-shaped grooves concentric with the ring body, and any two adjacent arc-shaped grooves have an overlapping area in radial projection.

11. The ring assembly as claimed in claim 1, characterized in that, The ring assembly is the outer cover ring or support ring in the epitaxial growth equipment.

12. An epitaxial growth apparatus, characterized in that, include: reaction chamber; A gas spray head is disposed inside the reaction chamber and is used to supply process gas into the reaction chamber; A base assembly is disposed within the reaction chamber and is positioned opposite to the gas spray head. It is used to support the substrate and drive the substrate and process gas to rotate. The base assembly includes: Base; An outer cover ring is located above the base, and at least a portion of the outer cover ring covers the outer peripheral edge of the base, the outer cover ring having the structure of a ring assembly as described in any one of claims 1-11; In the radial direction from the inside to the outside of the outer cover ring, the direction of the first isolation groove and the second isolation groove on the outer cover ring is clockwise or counterclockwise, and the first isolation groove and the second isolation groove on the outer cover ring are matched with the airflow direction of the process gas.

13. The epitaxial growth apparatus as described in claim 12, characterized in that, The base assembly also includes a support ring disposed above the base for supporting the substrate; The support ring is located inside the outer cover ring, and the support ring also adopts the structure of the ring assembly as described in any one of claims 1-11; in the radial direction from the inside to the outside of the support ring, the direction of the first isolation groove and the second isolation groove on the support ring is clockwise or counterclockwise with the rotation direction of the support ring, and the first isolation groove and the second isolation groove on the support ring are also matched with the airflow direction of the process gas.

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