A silicon carbide switch tube driving power supply circuit
By using a dual-input dual-output driver IC and a full-bridge rectifier structure with transformer T1, the problem of increased losses in traditional silicon carbide switching transistor driver circuits at high frequencies is solved, achieving stable and reliable 18V and -3V voltage outputs and improving system efficiency.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- SHENZHEN GOSPELL DIGITAL TECHNOLOGY CO LTD
- Filing Date
- 2025-07-08
- Publication Date
- 2026-06-16
AI Technical Summary
Traditional silicon carbide switching transistor drive circuits suffer increased losses as the switching frequency increases, affecting system efficiency and making it difficult to stably and reliably provide 18V and -3V drive voltages.
A silicon carbide switching transistor drive power supply circuit is adopted. It utilizes a dual-input dual-output drive IC and transformer T1, and provides a high-frequency rectangular wave and regulated output of 18V and -3V voltages through a topology composed of a full-bridge rectifier and Zener diodes.
It achieves a simple topology, fewer components, and lower cost, and provides stable and reliable 18V and -3V voltages required by silicon carbide switching transistors, reducing losses and improving system efficiency.
Smart Images

Figure CN224367733U_ABST