Sapphire crystal assembly heat preservation hot field
By employing an assembled thermal insulation structure of internal protective graphite screen and multi-layer hard carbon felt material in the sapphire growth furnace, the problems of heavy weight, easy deformation, and poor insulation effect of molybdenum screens are solved, achieving easy installation and efficient insulation effect.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- TDG YINXIA NEW MATERIAL CO LTD
- Filing Date
- 2025-07-31
- Publication Date
- 2026-06-19
Smart Images
Figure CN224378299U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of sapphire crystal growth technology, specifically to a thermal insulation field for sapphire crystal assembly. Background Technology
[0002] In recent years, large-scale sapphire growth furnaces on the market typically employ high-temperature resistant molybdenum screens as a thermal insulation zone to achieve a suitable temperature gradient for crystal growth. However, existing technology suffers from the following drawbacks: 1. The molybdenum screens are heavy, causing significant difficulties in installation and handling; 2. The molybdenum screens soften upon heating, often deforming and breaking after repeated use; 3. Molybdenum processing is difficult and has a long processing cycle; 4. The molybdenum screens have relatively fast thermal conductivity, poor thermal insulation, and high energy consumption.
[0003] Therefore, in order to address the shortcomings of current sapphire molybdenum screen hot zone technology in the market and meet the development needs of large-scale sapphire production processes, it is necessary to adjust the structure of the heat preservation hot zone to facilitate the installation of the hot zone in large-scale sapphire growth furnaces, while also producing a good heat preservation effect to better ensure efficient crystal production and promote industry development. Utility Model Content
[0004] The technical problem to be solved by this utility model is to provide a sapphire crystal growth assembly insulation thermal field that can be used in large-kilogram sapphire growth furnaces to ensure good insulation effect during crystal growth, and the insulation thermal field structure is stable and easy to install.
[0005] This utility model provides a thermal insulation field for sapphire crystal growth assembly, including an outer cavity and a heater disposed within the outer cavity. A thermal insulation chamber is provided between the outer cavity and the heater. A thermal insulation sleeve is provided within the thermal insulation chamber, with gaps left between the thermal insulation sleeve and both the outer cavity and the heater. The top of the thermal insulation sleeve has an upper insulation layer, and its bottom has a lower insulation layer. Wherein:
[0006] The thermal insulation jacket includes an inner protective graphite screen, an inner insulation layer assembled on the outside of the inner protective graphite screen, and an outer insulation layer assembled on the outside of the inner insulation layer.
[0007] The inner insulation layer is assembled from multiple inner insulation layer main bodies;
[0008] The outer insulation layer includes a first outer insulation layer body, a second outer insulation layer body, and a fixing pin. Slots are provided on both side walls of the first and second outer insulation layer bodies. The first and second outer insulation layer bodies are spaced apart, and each pair of adjacent first and second outer insulation layer bodies are connected by a fixing pin.
[0009] Preferably, the inner wall of the inner insulation layer body is an arc surface, its outer wall is a plane, and both its side walls are inclined surfaces, with the arc surface of the inner insulation layer body in contact with the outer wall of the inner protective graphite screen.
[0010] Preferably, the inner wall of the first outer insulation layer body is a V-shaped surface, its outer wall is an arc-shaped surface, and both its side walls are inclined surfaces. The first outer insulation layer body is located at the connection of two insulation layer bodies, and its inner wall is in contact with the outer walls of the two adjacent insulation layer bodies respectively.
[0011] Preferably, the inner wall of the second outer insulation layer body is a plane, its outer wall is an arc-shaped surface, and both its side walls are inclined surfaces, with the side walls of the second outer insulation layer body in contact with the side walls of the first outer insulation layer body.
[0012] Preferably, the slot is a rectangular slot and the fixing pin is a rectangular pin.
[0013] Preferably, both the lower edge of the upper insulation layer and the upper edge of the lower insulation layer are provided with protrusions, which are fitted onto the outer side of the outer insulation layer.
[0014] Preferably, the lower end of the heater is connected to an electrode, which passes through a through hole in the lower insulation layer and has a gap between it and the lower insulation layer.
[0015] The inner insulation layer, the main body of the first outer insulation layer, the main body of the second outer insulation layer, the fixing pin, the upper insulation layer, and the lower insulation layer are all made of rigid carbon felt material.
[0016] The beneficial effects of this invention are as follows: The sapphire crystal growth assembly insulation thermal field of this invention uses an inner protective graphite screen made of graphite, which reflects heat radiation, making the heat radiation more uniform and effectively supporting the inner and outer insulation layers. Both the inner and outer insulation layers are assembled from a main body made of rigid carbon felt, resulting in excellent insulation performance. Furthermore, the assembled structure of the inner and outer insulation layers facilitates quick disassembly, assembly, and replacement. Therefore, this insulation thermal field not only ensures good insulation during crystal growth but also has a stable structure, is easy to install, and is suitable for use in large-capacity sapphire growth furnaces. It solves the problems of heavy and inconvenient molybdenum screens in existing technologies, as well as the relatively poor insulation effect, high energy consumption, and susceptibility to deformation and damage after repeated use of molybdenum screens. Attached Figure Description
[0017] Figure 1 This is a top view of the thermal insulation field of the sapphire crystal growth assembly according to this utility model.
[0018] Figure 2 for Figure 1 Axial sectional view.
[0019] In the figure: outer cavity 1, heater 2, insulation chamber 3, thermal insulation sleeve 4, inner protective graphite screen 41, inner insulation layer 42, outer insulation layer 43, first outer insulation layer body 43-1, second outer insulation layer body 43-2, fixing pin 43-3, upper insulation layer 5, lower insulation layer 6, protrusion 7, connecting electrode 8. Detailed Implementation
[0020] To make the technical solution of this utility model easier to understand, the technical solution of this utility model will now be clearly and completely described in conjunction with the accompanying drawings and specific embodiments.
[0021] Example 1:
[0022] like Figure 1 and Figure 2 As shown, the sapphire crystal growth assembly thermal insulation field of this embodiment includes an outer cavity 1 and a heater 2 disposed within the outer cavity 1. A thermal insulation chamber 3 is provided between the outer cavity 1 and the heater 2. A thermal insulation sleeve 4 is provided within the thermal insulation chamber 3, and gaps are left between the thermal insulation sleeve 4 and both the outer cavity 1 and the heater 2. An upper thermal insulation layer 5 is provided at the top of the thermal insulation sleeve 4, and a lower thermal insulation layer 6 is provided at its bottom.
[0023] The thermal insulation jacket 4 includes an inner protective graphite screen 41, an inner insulation layer 42 is assembled on the outer side of the inner protective graphite screen 41, and an outer insulation layer 43 is assembled on the outer side of the inner insulation layer 42.
[0024] The inner insulation layer 42 is assembled from multiple inner insulation layer main bodies;
[0025] The outer insulation layer 43 includes a first outer insulation layer body 43-1, a second outer insulation layer body 43-2, and a fixing pin 43-3. Slots are provided on both side walls of the first outer insulation layer body 43-1 and the second outer insulation layer body 43-2. The first outer insulation layer body 43-1 and the second outer insulation layer body 43-2 are spaced apart, and each two adjacent first outer insulation layer bodies 43-1 and second outer insulation layer bodies 43-2 are connected by the fixing pin 43-3.
[0026] Example 2:
[0027] like Figure 1 and 2As shown, in this embodiment of the sapphire crystal growth assembly thermal insulation field, based on Embodiment 1, the inner wall of the main body of the inner insulation layer is an arc surface, its outer wall is a plane, and both its side walls are inclined. The arc surface of the main body of the inner insulation layer contacts the outer wall of the inner protective graphite screen 41. The inner wall of the first outer insulation layer main body 43-1 is a V-shaped surface, its outer wall is an arc surface, and both its side walls are inclined. The first outer insulation layer main body 43-1 is located at the connection of two insulation layer main bodies, and its inner wall contacts the outer walls of the two adjacent insulation layer main bodies respectively. The inner wall of the second outer insulation layer main body 43-2 is a plane, its outer wall is an arc surface, and both its side walls are inclined. The side wall of the second outer insulation layer main body 43-2 contacts the side wall of the first outer insulation layer main body 43-1. The slot is a rectangular slot, and the fixing pin 43-3 is a rectangular pin.
[0028] Example 3:
[0029] like Figure 1 and Figure 2 As shown, in this embodiment of the sapphire crystal growth assembly thermal insulation field, based on embodiment 2, protrusions 7 are provided at the lower edge of the upper insulation layer 5 and the upper edge of the lower insulation layer 6, and the protrusions 7 are fitted to the outside of the outer insulation layer 43. The lower end of the heater 2 is connected to the electrode 8, which passes through the through hole on the lower insulation layer 6 and leaves a gap between it and the lower insulation layer 6. The inner insulation layer 42, the first outer insulation layer body 43-1, the second outer insulation layer body 43-2, the fixing pin 43-3, the upper insulation layer 5, and the lower insulation layer 6 are all made of rigid carbon felt material.
[0030] The working principle of this invention is as follows: The sapphire crystal growth assembly insulation thermal field of this invention achieves insulation by setting up a thermal field insulation sleeve 4 with a three-layer insulation structure, including an inner protective graphite screen 41, an inner insulation layer 42, and an outer insulation layer 43, within the insulation chamber between the outer cavity 1 and the heater 2, thereby improving the thermal field insulation effect. The innermost layer is the inner protective graphite screen 41. The second layer is the inner insulation layer 42, which is assembled from multiple inner insulation layer main bodies and is located between the outer insulation layer 43 and the inner protective graphite screen 41. The third layer is the outer insulation layer 43, which includes a first outer insulation layer body 43-1 and a second outer insulation layer body 43-2. The first outer insulation layer body 43-1 and the second outer insulation layer body 43-2 are assembled at intervals outside the inner insulation layer 42, and each adjacent pair of first outer insulation layer bodies 43-1 and second outer insulation layer bodies 43-2 are connected by fixing pins 43-3, forming a fixed arrangement. After the fixing pins 43-3 are connected, the first outer insulation layer body 43-1 and the second outer insulation layer body 43-2 are interlocked and locked to prevent them from falling outward. In addition, the upper insulation layer 5 and the lower insulation layer 6 are respectively provided at the upper and lower ends of the thermal insulation sleeve 4. Both the upper insulation layer 5 and the lower insulation layer 6 are provided with external protrusions 7 to fix the outer insulation layer 43 and prevent the thermal field from flipping outward due to possible thermal expansion.
[0031] During installation, the connecting electrode 8 is installed first, followed by the fixing of the lower insulation layer 6, with a suitable gap left between the connecting electrode 8 and the lower insulation layer 6 to prevent contact between them. Then, the center is determined by positioning and aligning the inner protective graphite screen 41 with the lower insulation layer 6. The inner insulation layer bodies are arranged sequentially, and the first outer insulation layer body 43-1 is placed outside each joint to prevent the inner insulation layer body from tilting outwards. After the first outer insulation layer body 43-1 is installed, the second outer insulation layer body 43-2 is inserted into the gap, completing the basic laying of the outer insulation layer 43. Then, the fixing pin 43-3 is inserted to connect the first and second outer insulation layer bodies 43-1. Next, the heater 2 is placed in the center of the outer cavity 1 and connected to the connecting electrode 8. Finally, the upper insulation layer 5 is aligned with the outer insulation layer and installed, achieving complete installation of the thermal field.
[0032] During disassembly, simply remove one of the retaining pins 43-3 first. The connection between the remaining components—the first outer insulation layer body 43-1, the second outer insulation layer body 43-2, and the retaining pin 43-3—will be released from its initial locking state, allowing for direct removal in sequence. To facilitate the removal of the retaining pin 43-3, a pull ring or similar structure can be pre-installed at its end.
[0033] It should be noted that the embodiments described herein are only some embodiments of this utility model, and not all implementations of this utility model. These embodiments are merely illustrative and are intended only to provide a more intuitive and clear way of understanding the content of this utility model, not to limit the technical solutions described herein. All other implementation methods that can be conceived by those skilled in the art without creative effort, as well as other simple substitutions and variations of the technical solutions of this utility model, without departing from the concept of this utility model, are within the protection scope of this utility model.
Claims
1. A sapphire crystal growth assembly heat conservation hot field, characterized in that, It includes an outer cavity (1) and a heater (2) located inside the outer cavity (1). A heat insulation chamber (3) is provided between the outer cavity (1) and the heater (2). A thermal insulation sleeve (4) is provided inside the heat insulation chamber (3), and gaps are left between the thermal insulation sleeve (4) and the outer cavity (1) and the heater (2). The top of the thermal insulation sleeve (4) is provided with an upper insulation layer (5), and the bottom is provided with a lower insulation layer (6). The thermal insulation jacket (4) includes an inner protective graphite screen (41), an inner insulation layer (42) is assembled on the outer side of the inner protective graphite screen (41), and an outer insulation layer (43) is assembled on the outer side of the inner insulation layer (42). The inner insulation layer (42) is assembled from multiple inner insulation layer main bodies; The outer insulation layer (43) includes a first outer insulation layer body (43-1), a second outer insulation layer body (43-2), and a fixing pin (43-3). The first outer insulation layer body (43-1) and the second outer insulation layer body (43-2) are provided with slots on both side walls. The first outer insulation layer body (43-1) and the second outer insulation layer body (43-2) are spaced apart. Each pair of adjacent first outer insulation layer bodies (43-1) and second outer insulation layer bodies (43-2) are connected by a fixing pin (43-3).
2. The sapphire crystal growth assembly thermal insulation field as described in claim 1, characterized in that, The inner wall of the main body of the inner insulation layer is an arc surface, its outer wall is a plane, and both its side walls are inclined surfaces. The arc surface of the main body of the inner insulation layer is in contact with the outer wall of the inner protective graphite screen (41).
3. The sapphire crystal growth assembly thermal insulation field as described in claim 2, characterized in that, The inner wall of the first outer insulation layer body (43-1) is V-shaped, its outer wall is arc-shaped, and both its side walls are inclined. The first outer insulation layer body (43-1) is located at the connection of the two insulation layer bodies, and its inner wall is in contact with the outer walls of the two adjacent insulation layer bodies respectively.
4. The sapphire crystal growth assembly thermal insulation field as described in claim 3, characterized in that, The inner wall of the second outer insulation layer body (43-2) is a plane, its outer wall is an arc surface, and both its side walls are inclined. The side walls of the second outer insulation layer body (43-2) are in contact with the side walls of the first outer insulation layer body (43-1).
5. The sapphire crystal growth assembly thermal insulation field as described in claim 1, characterized in that, The slot is a rectangular slot, and the fixing pin (43-3) is a rectangular pin.
6. The sapphire crystal growth assembly thermal insulation field as described in claim 1, characterized in that, The lower edge of the upper insulation layer (5) and the upper edge of the lower insulation layer (6) are provided with protrusions (7), which are fitted to the outside of the outer insulation layer (43).
7. The sapphire crystal growth assembly thermal insulation field as described in claim 1, characterized in that, The lower end of the heater (2) is connected to the electrode (8), which passes through the through hole on the lower insulation layer (6) and leaves a gap between it and the lower insulation layer (6).
8. The sapphire crystal growth assembly thermal insulation field as described in claim 1, characterized in that, The inner insulation layer (42), the first outer insulation layer body (43-1), the second outer insulation layer body (43-2), the fixing pin (43-3), the upper insulation layer (5) and the lower insulation layer (6) are all made of rigid carbon felt material.